Samsung’s FDS with MRAM:

Enabling Today’s Innovative Low Power Endpoint ProductsTim Dry - Director Foundry Marketing: Edge and End Point

April 2019

CONTENTS

• IoT Requirements

• IoT Platform

• IoT Enablement with FDSOI

• FDSOI Readiness

April 2019 Samsung Foundry

SAMSUNG

Wide Requirements for Intelligent IoT

StreamingDormant Active

Hig

hLo

w

Processing Load

Processing Duty Cycle

MCU/A

SSP

MPU/S

OC

Years

Hours

SAMSUNG

Intelligent IoT Endpoint Platform

Package Solution

Process Technology

Embedded NVM Security

Analog

Connectivity & RF

Compute PMU

SRAM

AI

- eMRAM- eFlash

- Optimized DNN Accelerators- Analog Compute

- Optimization for performance at cost

- Power Management, PVT- Temperature Sensor, RTC

- All-in-one IoT Solution- PUF based “Root of Trust”

- Optimized Standard RF e.g. BT/BLE, NB-IOT

- Ultra-low leakage SRAM & Logic- Low Power Design Methodology- RF and eNVM

SAMSUNG

Samsung FDSOI Process for IoT Endpoint Platform

Wide operating range Multiple Vt devices High performance via forward body bias Low leakage via gate lengths & reverse body biasing

Best CMOS RF and Analog Mixed Signal Capability High Analog gain (Gm/Gds) RF Performance: High fT/fmax & low 1/f noise Superior SER & Smaller Mismatch System Integration: High-Q Inductor, Stacked FETs

eMRAM NEW Fast Write and low power compared to flash

SAMSUNG

Samsung FDSOI Roadmap for IoT Endpoint Platform

28FDS +RF + eMRAM

18FDS

Available Now 2019 2020

RF eMRAM

SAMSUNG

28FDS: First Generation Fully Mature FD-SOI

Product Tape-out Record

2015 2016 2017 2018

Consumer

IoT/WearableAutomotive/Industrial

Network/Computing

Num

ber

of

Pro

duct

D0 Trend

28nm product

28FDS Product

LPP (Do Plan)

FDS (Do Plan)

28nm Production

28FDS Production

D0

(Poisso

n m

ode )

2013 2014 2015 2016 2017 2018

SAMSUNG

18FDS: Optimized for Power Reduction

Cost effective scaling

• FEOL CPP from 20nm

• BEOL from 14nm

Additional Features

• Vdd scaling by 200mV enables significant power saving

• Wider coverage from ULVT to low-leakage

• Channel SiGe for PMOS performance

SAMSUNG

eMRAM Vertical Structure

1T/1MTJ embedded in 28nm structure

MTJModule

BEC

MTJ

Commercial and Industrial Applications

• Multiple bit cells: 85C, 105C, 125C, 125C+solder reflow

• Wr Speed 100x lower than eFlash

Samsung eMRAM on FDSOI

Memory Compilers

• Samsung: 8Mb

• ARM: 1-128Mb Configurable

8Mb Macro

SAMSUNG

28FDS eMRAM Shipping Now!

SAMSUNG Newsroom

SAMSUNG

28FDS eMRAM Customer Example

ExternalMemory

+

40nm 28FDS

RF CPU

DC-DC LDO

Logic MRAM

RF CPU

DC-DC LDO

Logic

Chip level power

reduction 65%,

RF power

reduction 76%

SAMSUNG

28FDS RF/mmWave

5G mmWave product in 28FDS shipping

• characterized to 110GHz; Fmax > 400GHz

Design Kits

• Good MHC*; Support for EMX

28FDS RF/mmWave

FETSG RVT/LVT

EG 1.5/1.8V

LDMOS

SRAM HD/HS/DP/TP

ResistorP+/N+ Poly

N-Well

CapacitorEGNCAP

VNCAP

High Q Inductor

Vertical PNP

BEOL8M + UTM

10M + UTM

(*) Model Hardware Correlation

Base Band DSP and Host Processor

• Forward Body bias for on demand performance

• eMRAM for code, protocol stacks, Neighbor networking tables

EcoSystem Partners for WPAN/WLAN RF and BB IP and SW solutions

SAMSUNG

Artificial Intelligence at the IoT Endpoint

Solution Today

• Vision DSPs with Neural Network (NN) Acc.

• Tightly Coupled Memory (TCM)

• Flexible Interconnect

• Optimized MAC

• 3D/2.5D Packaging

Solution Coming

• Pruned NN algo., reduced precision e.g. 8b

• New architectures

• Neuromorphic processing

• Analog Multi-Level-Cell (MLC) on eNVMs

SAMSUNG

Security at the IoT Endpoint

“Protect Security Key and All Data Flows”

LowEnd

Mid.End

HighEnd

Authentication

Root of Trust

Secure Storage

Secure Processing

Key Management

“Same Security”

“Security made simple”

Robustness

Flexibility

“Same Security Solution”

SAMSUNG

FDSOI IP Solution Readiness for Edge and Endpoint

April 2019 Samsung Foundry

Complete IP solutions for IoT designs- Ready NOW!

Function IPs Si verified IPs Si verified

Foundation IP Std Cells ● Memory Compiler ●

Foundation IP GPIO ● Memory Compiler (LP,LV) Third Party

Foundation IP OTP ● Memory Compiler (HS) Third Party

Foundation IP eMRAM Compiler ● eMRAM Compiler Third Party

Security Crypto Suite ● PUF ●

Analog PLLs ● ADCs Third Party

Analog CODEC ● ADCs ●

Analog (PMU) DC-DC Bucks ● LDOs ●

Analog (PMU) PVT ● Sub-uA Detector ●

Interface LPDDR4/3 ● PCIe Gen3/4 ●

Interface DDR3/2 ● SATA Gen3 ●

Interface DDR4/3 ● Ethernet 1G ●

Interface USB2.0 ● MIPI (D&M-PHY) ●

Interface USB3.0/3.1 ● HDMI ●

Interface PCIe Gen2/3 ● DP ●Radio BT Classic (3P) 3P BLE/802.15.4 3P

SAMSUNG

Samsung Foundry, Total Solution Provider

Total Solution Provider

World Class PKG

Fast TAT in Development& Manufacturing

One-Stop ShopTurn-key Service

SAMSUNG

Samsung Foundry Vision

Sign up now as seats are limited: http://www.samsungfoundryforum.com/2019/

Samsung Foundry ForumMay 14th, 2019, 1:00pm -7:00pmSanta Clara Marriott, Santa Clara

Come join us at our 4th Annual Foundry Forum and learn about the latest innovations in:

Process and Packaging Technology, IP and Design Solutions and Design Services

SAMSUNG

Summary

In 2017 Samsung presented 28FDS Base was ready

In 2018 Samsung presented 28FDS+RF was ready

Today 2019, Samsung presented 28FDS+RF+eMRAM is ready

Imagine what innovative products you can now build!