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8-1
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
8. Block Diagram and Schematic
Samsung
Confidential
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAM
SUN
G PR
OPR
IET
AR
Y1
D
22
SA
MS
UN
G
D
1
EXCEPT AS AUTHORIZED BY SAMSUNG.
CPU :
AA
B
A
22
PROPRIETARY INFORMATION THAT IS
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
A
Revision :
B
4
B
PROPRIETARY INFORMATION THAT IS
B D
3
ELE
CTR
ON
ICS
0.9
SAMSUNG ELECTRONICS CO’S PROPERTY.
D
Model Name :
A
THIS DOCUMENT CONTAINS CONFIDENTIAL
DRAW
Dev. Step :
HD DECODER (BROADCOM BCM70015)
PROPRIETARY INFORMATION THAT IS
EXCEPT AS AUTHORIZED BY SAMSUNG.
1
4Chip Set :
BT & CAMERA & TSP
PV2
SAM
SUN
G PR
OPR
IET
AR
Y1
CHECK
Free Fall Sensor
1
INTEL TIG
ERPO
INT-M
PCB Part No :
T.R. Date :
GRAPHICS POWER (P0.89V)
Bloom
ington
PINE TRAIL-M
2
C
EXCEPT AS AUTHORIZED BY SAMSUNG.
THIS DOCUMENT CONTAINS CONFIDENTIAL
C
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
D
3
CLOCK GENERATOR (CK-505M)
A
D
B
LCD(LVDS) CONN.
4
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
2009.11.09
Table of Contents
CARDBUS CONTROLLER (GL823)
3
B
APPROVAL3
CPU VRM POWER (VCC_CORE)
CHIPSET POWER (P1.05V, P1.5V & P1.2V)
SWITCHED POWER
THIS DOCUMENT CONTAINS CONFIDENTIAL
1
BLANK PAGE (TBD)
29
24
CC
20
Page.
Page.
23
Page.
4
28
Page.
Page.
31
Page.
C
Page.33
Page.
32
Page.
3
39
Page.
Page.
Page.
Page.
2
3
SAM
SUN
G PR
OPR
IET
AR
Y
Page.
Page.
Page.
4Remarks : IN
TEL PINEV
IEW-M
CLOCK DISTRIBUTION
BOARD INFORMATION
1
PINEVIEW-M (N450/N470 CPU)
THERMAL MONITOR
C
DDR2 SODIMM
SPI ROM & DEBUG PORT
7
CRT CONN.
MICOM (MEC1308)
USB
MINI-CARD (Wireless & HSDPA/WIBRO)
9
AUDIO CODEC (ALC269Q-GR)
AMP & WOOFER
4
CHARGER
DDR2 POWER
16
19
18
MOUNT HOLE
POWER DISCHARGER
HDD CONNECTOR (SATA)
25
30
27
Page.
TEST POINTS
44~45
26
2122
Page.
Page.
HP & MIC & INT. MIC
38
37
36
Page.
Page.
KBD CONN & MICOM GLUE LOGIC
35
34
40
Page.
Page.
LED Logic
414243
2Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
Page.
COVER
OPERATION BLOCK DIAGRAM
POWER DIAGRAM / SEQUENCE
34~6
TIGERPOINT (NM10 CHIPSET)
810~12
LAN (10/100)
13~15
17
P3.3V_AUX & P5V_AUX
8-2
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
KE
YB
OA
RD
SP
I
TF
T_L
CD
SA
TA
CK
-505LV
DS
VG
A
HS
DP
A/W
ibro
PC
I_ EX
P2
G7923
DD
R2-S
OD
IMM
MA
X 1 G
B
Marvell 88E
8040
US
B2.0 [P
7:0]
Page 22~25
P0
GE
NE
RA
TO
R
CP
U
Power S/W
CP
U2_TH
ER
MD
A/D
C
(N450/N
470)
Page 17~20
HD
Deco
der
2P
2.5inch
PC
I_ EX
P [P
4:1]
P/S
2
P5
PC
I_ EX
P1
Tran
sform
er
US
B (2)
US
B (1):debug port
Space bar
2P
TO
UC
HP
AD
PC
I_ EX
P3
Pineview
-M
559 uFCB
GA
8 Type
Tigerpoint
360 BG
A P
KG
TYP
E
10.1"/10.2" WID
E
LA
N C
ON
TR
OL
LE
R
RJ45
THIS DOCUMENT CONTAINS CONFIDENTIAL
2
HS
DP
A
HD
D
(default)
MIN
I CA
RD
1
LPC
Wireless LA
N
1
ME
C1308
US
B (3):C
hargeable US
B
Cam
eraP
7
667 MH
z
P2
3in1 B’d
P4
Blu
etoo
thM
od
ule
SAM
SUN
G PR
OPR
IET
AR
Y
EXCEPT AS AUTHORIZED BY SAMSUNG.
MIN
I CA
RD
2SIM
M C
ard
option
P6 C
LO
CK
TH
ER
MA
L
SPKR L
ALC
269Q
P3
ELE
CTR
ON
ICS
B
4
ICH
Woofer
200P
Lid S/W
SP
I RO
M
OPE
RA
TIO
N B
LO
CK
DIA
GR
AM
Page 13~16
DD
R2
Broadcom
BC
M70015
PC
I_ EX
P4
NM
10 Chipset
SE
NS
OR
LA
N
A
PROPRIETARY INFORMATION THAT IS
AM
PT
PA
6017R
F OFF S/W
(Slide S/W)
RT
CB
att.
3
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
3
CR
T
A B
MIC
OM
C
1
Mu
lti-Card
SPKR R
GL823
SA
MS
UN
G
SAMSUNG ELECTRONICS CO’S PROPERTY.
Au
dio
High D
efinition Audio
C
4
DD
P1
TS
P (R
eady)
4P
HD
Audio
HP
MIC
-IN
INT
. MIC
(Slide S/W)
WLA
N+W
iMax C
ombo
2
Mem
ory
8-3
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
3
Mini C
ard 1(Wireless LA
N)
LOM
1010 000XC
K-505M
(Clock G
enerator)
BO
AR
D IN
FOR
MA
TIO
N
P5V
PRTC
_BA
T
D
D2h
Clock, U
nused Clock O
utput Disable
AS
SIG
NE
D TO
3-IN-1
PROPRIETARY INFORMATION THAT IS
5.0V pow
er rail (off in S4-S
5)
LPC
Bridge/ID
E/A
C97/S
MB
US
Internal MA
C
AD
29(internal)
EXCEPT AS AUTHORIZED BY SAMSUNG.
6
US
B
1101 001X
P0.9V
3.3V sw
itched power rail (off in S
3-S5)
1
3.3V alw
ays power rail(for M
icom)
P3.3V_MIC
OM
THIS DOCUMENT CONTAINS CONFIDENTIAL
3
CA
ME
RA
UH
CI_0
P1.8V_AU
X
SAM
SUN
G PR
OPR
IET
AR
Y
A
2
C
Thermal S
ensor7A
h
0
0.9V pow
er rail for DD
R (off in S
4-S5)
US
B P
OR
T U
SB
PO
RT
Prim
ary DC
system pow
er supply (9 to 19V)
P3.3V_AU
X
Port N
umber
Pow
er Rail
3.3V pow
er rail (off in S4-S
5)
Core voltage for A
tom C
PU
D
HS
DP
A
AD
24(internal)
UH
CI_3
UH
CI_2
UH
CI_1
Devices
Hex
1
Port N
umber
I C / S
MB
Address
Devices
VTT for C
PU
, Calistoga &
ICH
7-M
3.3V (can drop to 2.0V
min. in G
3 state) supply for the RTC
well.
2
B
SA
MS
UN
G
VDC
IDS
EL#
RE
Q/G
NT#
Bus
2W
ireless LAN
ICH
7M
AS
SIG
NE
D TO
Hub to P
CI
P1.05V(VCC
P)
A
B
Port N
umber
AS
SIG
NE
D TO 0111 101X
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
12
5 4
Program
able
Address
Descriptions
AD
30(internal)A
D31(internal)
P1.5V1.5V
switched pow
er rail (off in S3-S
5)
US
B P
OR
T
BLU
ETO
OTH
ELE
CTR
ON
ICS
SAMSUNG ELECTRONICS CO’S PROPERTY.
13
P3.3VC
PU_C
OR
E
PC
I Express A
ssign
4
CA
0h-
4
5.0V sw
itched power rail (off in S
3-S5)
CP
U Therm
al Sensor
1.8V pow
er rail for DD
R (off in S
4-S5)
SO
DIM
M0
SC
HE
MA
TIC A
NN
OTA
TION
S A
ND
BO
AR
D IN
FOR
MA
TION
PC
I Devices
Voltage R
ails
7
2US
B P
OR
T Assign
P5V_AU
X
3M
ini Card 2 (H
SD
PA
/Wibro)
Interrupts
SMB
US M
asterM
aster
8-4
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
P3.3V
_MIC
OM
P1.8V
_AU
X
Th
ermal S
enso
r
3
P1.5V
P5.0V
POW
ER
DIA
GR
AM
P3.3V
S5
M_P
CI
KB
C3_S
US
PW
R
S4
Rev 0.1
+V*L
AN
P2.5V
AU
X D
ISP
LA
Y
ON Battery D
C
DD
R II-T
ermin
ation
FA
N C
IRC
UIT
4
AC
Ad
apter
LE
Ds
MIC
OM
SAMSUNG ELECTRONICS CO’S PROPERTY.
US
B
LA
N
ON
1
ICH
7-M
+0.9V
P1.8V
_LA
N
ON
P1.2V
_LA
N
B
MIC
OM
P12.0V
_AL
W
Rail
ICH
7-M
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
ON
ICH
8-M
CR
T
+V*A
(LW
S)
VC
CP
3_PW
RG
D
S3
CP
U_C
OR
E
S5-S
4
+V*A
UX
S0
LA
N
State
CR
ES
TL
INE
BT
DIA
MO
ND
VIL
LE
HD
DC
P1.05V
LC
DP
CM
CIA
ON
P0.9V
(CH
P3_S
LP
S3*)
4
SA
MS
UN
G
MIC
OM
SO
DIM
M (D
DR
III)
M_P
CI
ON
1
CA
LIS
TO
GA
ON
A
ELE
CTR
ON
ICS
LA
N
D
C
S0
ON
P2.5V
_LA
N
ON
(CH
P3_S
4_ST
AT
E*)
P5.0V
_AL
W
EXCEPT AS AUTHORIZED BY SAMSUNG.
KB
C3_P
WR
ON
ICH
7-M
P3.3V
_AU
X
ON
P5V
_AU
X
DIA
MO
ND
VIL
LE
MD
C
CA
LIS
TO
GA
+1.8V_A
UX
D
VD
C
SAM
SUN
G PR
OPR
IET
AR
Y
ICH
7-M
S3
ICH
7-M
PROPRIETARY INFORMATION THAT IS
ON
B
2
A
2
SO
DIM
M
THIS DOCUMENT CONTAINS CONFIDENTIAL
+V
ON
Po
wer O
n/O
ff Tab
le by S
-state
SP
I
3
+V* (C
OR
E)
8-5
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
3.3V5V
POW
ER
RA
ILS A
NA
LY
SIS
3.3V
0.1 A (T
BD
)
3
Ad
apter
Battery
0.2 A (T
BD
)T
ou
ch P
ad
(4 W )
( 1.5 W )
0.001 A (T
BD
)
2.2 A
A B
0.13 A
CP
U C
OR
E
PEX IO (TBD A)VDC INV ( TBD A )
0.08 A (T
BD
)
0.6 A
P1.8V
/2.5V_L
AN
0.08 A (T
BD
)
0.9V
RT
C_B
attery
22 SP
I3.3V
D
C
3.3V_A
UX
0.75 A (T
BD
)
0.1 A (T
BD
)3.3V
_AU
X
P5.0V
_LE
D (V
DC
INV
)0.35 A
C
5V_A
UX
1.05V (M
CH
CO
RE
)
MIC
OM
3VK
BC
0.01 A (T
BD
)K
BD
LE
D
SA
TA
HD
D
0.16 A (T
BD
)
SAM
SUN
G PR
OPR
IET
AR
YTHIS DOCUMENT CONTAINS CONFIDENTIAL
1.5V3.3V
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
5V 3.3V
1.05V ( T
BD
A )
1.5V ( T
BD
A )
1.6A0.421 A
0.9V( T
BD
A )
MIC
OM
3V ( T
BD
A )
1.5V
3.1 A (T
BD
)
5.0V ( T
BD
A )
3.3V_AUX ( TBD A )
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
1.5V
0.08 A (T
BD
)
3.3V (L
CD
3V)
LC
D
SA
MS
UN
G
3.3V
0.1 A (T
BD
)
1
FA
N5V
CP
U C
OR
E ( T
BD
A )
0.25 A (T
BD
)
Au
dio
AM
P
0.06 A (T
BD
)
5.0V_AUX ( TBD A )
5V
0.29 A (T
BD
)0.15 A
(TB
D)
1.5 A (T
BD
)5V
GM
CH
5V
0.2 A (T
BD
)
0.78 A3.3V
CL
OC
K1.5V
ITP
MIC
OM
3VP
WR
LE
D
1.05V
Th
ermal
3.3V
3.3V_A
UX
( ~ 5.0 W )
LA
N (88E
8057)
0.006 A (T
BD
)0.015 A
(TB
D)
RTC_BatteryVGA CORE (TBD A)
0.6 A (T
BD
)L
AN
1.05V (V
CC
P)
3.3V3.3V
_AU
X
DD
R-2
HD
Au
dio
0.07 A (T
BD
)
US
B (x 3)
SD
Card
2 A (T
BD
)
3.3VK
eyBo
ard
D
3.3V ( T
BD
A )
1.8V_A
UX
( TB
D A
)
B
0.5 A (T
BD
)0.75A
(TB
D)
Sen
sor
31
3.72 A
Calisto
ga
220V
( 2.5 W )
1 A (T
BD
)
1.8V_A
UX
Rev. 0.6 (060920)
0.22 A (T
BD
)5V
ELE
CTR
ON
ICS
0.209 A (T
BD
)
0.16 A
P3.3V
_AU
XP
1.2V_L
AN
ICH
7-M
0.001 A (T
BD
)
4 4
1.8V_A
UX
0.95 A
A
Min
i Card
X 2
1.5 A (T
BD
)
Diam
on
dville
2.5 A
1.05V
2.5V ( T
BD
A )
2.5V0.14 A
1.8V_A
UX
1.5A
8-6
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
18-0) VR
M3_C
PU
_PW
RG
D
PA
GE
44
C
PA
GE
29
14-2) P3.3V
VR
M
15-0) KB
C3_V
RO
N
15-0) KB
C3_P
WR
ON
14-1)P5V
1-1) CH
P3_R
TC
RS
T
POW
ER
SEQ
UE
NC
E B
LO
CK
DIA
GR
AM
Th
ermal
15-1) P2.5V
3-0) KBC3_CHKPWRSW*
8-1) P3.3V
_AU
X
Mo
nito
r
12-0) KB
C3_P
WR
BT
N*
4-0) KB
C3_S
US
PW
R
14-0) KB
C3_P
WR
ON
24-0) A20M
#/IGN
NE
#/INT
R/N
MI
13-1) P0.9V
4-1) P3.3V
_AU
X
8-3) P1.5V
5-1) P3.3V
_AU
X
24-0) A20M
#/IGN
NE
#/INT
R/N
MI
14-3) P0.9V
23-0) CPU1_CPURST*
15-2) VC
CP
26-0) CP
U B
IST
(1)P
OW
ER
15-1) P2.5V
MIN
I PC
IE
14-2) P1.5V
DD
R2
14-2) P1.5V
CL
OC
KEXCEPT AS AUTHORIZED BY SAMSUNG.
4-2) P3.3_A
UX
25-0) INIT
#
8-2) P1.8V
_AU
X
14-2) P3.3V
PA
GE
27
4
15-2) VC
CP
D
PA
GE
9
B
PA
GE
6
PA
GE
26
SC
454
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS19-0) V
RM
3_CP
U_P
WR
GD
SAM
SUN
G PR
OPR
IET
AR
Y
15-2) 1.5V_P
WR
GD
1
13-1) ME
M_V
RE
F
PROPRIETARY INFORMATION THAT IS
VR
MP
WR
GD
THIS DOCUMENT CONTAINS CONFIDENTIAL
RC
IN*
1
HD
D
2
SI3433
2
KB
C
4-3) P1.2V
_LA
N
3
15-0) KB
C3_P
WR
ON
Battery
13-1) ME
M_V
RE
F
14-2) P1.5V
22-0) PL
T3_R
ST
*
GM
CH
25-0) INIT
#
Battery M
od
e
ELE
CTR
ON
ICS
4-1) P3.3V
_LA
N
22-0) PL
T3_R
ST
#
8-2) P1.8V
_AU
X
14-3) P0.9V
C
23-0) PL
T3_R
ST
*
3
15-2) VC
CP
4
14-2) P1.5V
D
21-0) CP
U1_P
WR
GD
CP
U
B
18-0) VR
M3_C
PU
_PW
RG
D
MIC
521988E
8057
SI3433
15-1) P2.5V
5-1)P5V
_AU
X
LF
E9261
AM
P
12-1) CH
P3_S
LP
S5*/S
3*
AU
DIO
6-1) P5V
_AU
X
PA
GE
44
16-0) VC
CP
_PW
RG
D
2-1) MIC
OM
_P3V
22-0) PL
T3_R
ST
*
PA
GE
44
17-1) VC
C_C
OR
E
2-1) P5.0V
_AL
W
21-0) CP
U1_P
WR
GD
CP
U
14-1) P3.3V
S/W
P1.5V
_AU
X &
VC
CP
Devices
4-0) KB
C3_S
US
PW
R
Mem
ory
TP
S51120
CH
IP
P5V
_AU
X &
P3V
_AU
X
2-0) VD
C
SC
486
11.1V
PA
GE
40
ICH
7-M
4-2) P1.8V
_P2.5V
_LA
N
A
RT
C
CP
U
A
SA
MS
UN
G
CP
U
SAMSUNG ELECTRONICS CO’S PROPERTY.
VD
C
PA
GE
28
TP
S51120
PA
GE
18
1-0) PR
TC
_BA
T
PA
GE
43
PA
GE
39
GIG
AB
IT TRA
NS
FOR
ME
R
P5V
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15-0) KB
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RO
N
SC
415
19-0) VR
M3_C
PU
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RG
D
PA
GE
41
14-1)P5V
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14-0) KB
C3_P
WR
ON
PA
GE
40
LA
N_R
ES
ET
*
PA
GE
44
20-0) KB
C3_C
PU
PW
RG
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DD
R2 P
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ER
23-0) KB
C3_C
PU
RS
T*B
CP
69-16
16-0) VC
CP
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D
5-1) P3.3V
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X
14-2) P5.0V
5-0) AU
X5_P
WR
GD
8-7
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
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ConfidentialT
OU
CH
PAD
96 MH
z
CLK
1_PC
IEIC
H
BA
TT
ER
Y
12.288 MH
zH
DA
3_AU
D_B
CLK
1205-002574
CPU
KB
C
CLK
1_MC
H3G
PLL#
133 MH
z
CLK
0_HC
LK0
CLK
1_DR
EFS
SC
LK#
33 MH
z
CLK
3_PC
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IN
CLK
3_US
B48
133 MH
zC
LK0_H
CLK
1
CLK
1_DR
EFS
SC
LK
A
CLK
1_MIN
IPC
IE#
CLK
1_MIN
IPC
IE
CLK
1_MIN
3PC
IE#
CLK
1_MC
H3G
PLL
2
CL
OC
K D
ISTR
IBU
TIO
N
14.318 MH
z
CLK
1_MIN
3PC
IE
CLK
3_PC
LKC
B
33 MH
z
SOD
IMM
CLOCK GENERATOR
3
THIS DOCUMENT CONTAINS CONFIDENTIAL
CK-505M
CLK
0_HC
LK1#
4 4
CLK
1_DR
EFC
LK
133 MH
z
CLK
3_ICH
1432.786K
Hz
1
C
RTC
Clock
SM
B3_C
LKC
LK3_S
MB
CLK
CLK
1_PC
IELO
M
B
ELE
CTR
ON
ICS
CLK
1_PC
IELO
M#
CLK
1_SA
TA100 M
Hz
MIN
I PCIE
(HSD
PA)
DA
C
MIN
I PCIE
(WL
AN
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Hz
100 MH
z
AU
6371
SA
MS
UN
G
RTC
Clock
2
D
CLK
3_PC
LKM
ICO
M
IDTCV179BNLG
533 MH
z
CLK
1_MC
LK0/0#
SAMSUNG ELECTRONICS CO’S PROPERTY.
100 MH
z100 M
Hz
CLK
1_MC
LK1/1#
GM
CH
ICH
CA
RD
BU
S
133 MH
z
CLK
1_SA
TA#
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
CO
NT
RO
LL
ER
88E8057
33 MH
zC
LK3_P
CLK
ICH
SAM
SUN
G PR
OPR
IET
AR
YPROPRIETARY INFORMATION THAT IS
12 MH
z
CLK
0_HC
LK0#
133 MH
z
1
CLK
1_DR
EFC
LK#
3
B
33 MH
z
AU
DIO
CO
DE
C
KB
C3_S
MC
LK
KB
C5_TC
LK
CLK
1_PC
IEIC
H#
32.768KH
z
MIN
IPCI
8-8
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
Confidential
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166 MH
z
PE
G_C
LK/P
EG
_CLK
#
11
1
CC
266 MH
z
SR
C6
VD
D_48
THIS DOCUMENT CONTAINS CONFIDENTIAL
Place 14.318M
Hz w
ithin
11
CP
U_S
EL
2
1
CP
U Freq.
0
VD
D_P
LL3_IO
0
This part is 64pin QFN
package.
SAMSUNG ELECTRONICS CO’S PROPERTY.
all series 0 ohms (S
tuff)
all series 0 ohms (N
o Stuff), B
SE
L2 : 0 ohm to G
ND
500mils of C
K-505
133 MH
z
4
0
1
4
VD
D_P
LL3
B
VD
D_C
PU
VD
D_S
RC
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CLK
RE
Q B
SR
C_0/S
RC
_0#
1
0
Pin 20/21
ELE
CTR
ON
ICS
FSA
VD
D_S
RC
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
CLK
RE
Q E
CR
B : 22 ohm
BS
EL2
3
0 0
2
1
SR
C4
VD
D_P
CI
For EM
I
LOM
3_CLK
RE
Q#
VD
D_IO
PROPRIETARY INFORMATION THAT IS
400 MH
z
1
FSC0
A B
SAM
SUN
G PR
OPR
IET
AR
Y
MIN
I CA
RD
333 MH
z
HO
ST C
LK
DO
T_96/DO
T_96# SR
C P
OR
T
0
DE
VIC
E
SE
L_LCD
CLK
* BS
EL0
SA
MS
UN
G
HIG
H
CL
K R
EQ
1
Pin 24/25
For EM
I
EXCEPT AS AUTHORIZED BY SAMSUNG.
CR
B Test O
ption
CLK
RE
Q F
1
VD
D_C
PU
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A
10
166 MH
z
FSB
SR
C227M
& 27M
_SS
100 MH
z
D
3
RS
VD
0200 M
Hz
SA
TA
GM
CH
BS
EL1
0
CLK
RE
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0V
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F
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SR
C8
1
D
1%R
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143
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#
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7
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060
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EQ
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CLK
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EL1
CLK
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LK1_P
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#
CLK
1_DR
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LK#
CLK
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#
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1_BS
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CP
U1_B
SE
L2
CLK
1_MIN
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IE#
CLK
1_MC
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PLL#
CLK
1_MC
H3G
PLL
CLK
3_PC
I2_R
CLK
3_PC
I4_R
CLK
3_PC
LKM
ICO
M
CLK
3_DB
GLP
C
CLK
0_HC
LK0#
CLK
0_HC
LK0
CLK
1_DR
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SC
LKC
LK1_D
RE
FSS
CLK
#
CLK
3_US
B48
SM
B3_C
LK_S
SM
B3_D
ATA
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VR
M3_C
PU
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RG
D
CH
P3_C
PU
STP
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HP
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#
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CLK
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CLK
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14
CLK
3_PC
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H
CLK
1_MIN
IPC
IE
CLK
1_SA
TA#
CLK
3_14MH
Z_R
CLK
1_BS
EL1
CLK
3_PC
IF_R
CLK
0_HC
LK1#
CLK
0_HC
LK1
CLK
3_48MH
Z_R
CLK
1_SA
TA
8-9
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
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Confidential
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
4
SAMSUNG ELECTRONICS CO’S PROPERTY.
Angle Type
A
2
1SA
MSU
NG
PRO
PRIE
TA
RY
Line Width = 20 m
ilO
pposite side of CP
U.
4
THIS DOCUMENT CONTAINS CONFIDENTIAL
1
TRIP
_SE
T 1500 : 95 dgree
EXCEPT AS AUTHORIZED BY SAMSUNG.
SA
MS
UN
G
10mil w
idth and 10mil spacing.
ELE
CTR
ON
ICS
PROPRIETARY INFORMATION THAT IS
DTH
ER
MA
L SE
NS
OR
& FA
N C
ON
TRO
L
SM
BU
S A
ddress 7Ah
B
C
2
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C
3
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A
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580
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ND
12
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ND
24
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ND
36
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RM
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L
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A
FAN
5_VD
D
FAN
3_FDB
AC
K#
CP
U3_TH
RM
TRIP
#
8-10
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
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Confidential
1 / 5
DMI
RE
V=1.1
LVDS
ICHCPU
4
PROPRIETARY INFORMATION THAT IS
B
4
C
D
2 2
4
D
THIS DOCUMENT CONTAINS CONFIDENTIAL
SAMSUNG ELECTRONICS CO’S PROPERTY.
3
D
EXCEPT AS AUTHORIZED BY SAMSUNG.
B
SA
MS
UN
G
A
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
C
1
near HD
D connector
near FAN
B
1
SAMSUNG ELECTRONICS CO’S PROPERTY.
PINEVIEW
(1/3)EXCEPT AS AUTHORIZED BY SAMSUNG.
2
A
3SA
MSU
NG
PRO
PRIE
TA
RY
SAM
SUN
G PR
OPR
IET
AR
Y
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
23
A
PROPRIETARY INFORMATION THAT IS
3
ELE
CTR
ON
ICS
THIS DOCUMENT CONTAINS CONFIDENTIAL
B
1
CC
EM
I Request (10/30)
4
Intel : 3.32K ohm
1
A
D
2.2KR
644
nostuff
51R
121
1% R648
49.9
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J2D
MI_TX
N_1
G2
DM
I_TXP
_0H
3
H10
BC
LKNJ10
BC
LKP
G11
BP
M_1B
_0E
15B
PM
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G13
BP
M_1B
_2F13
BP
M_1B
_3B
18B
PM
_2_0#_RS
VD
B20
BP
M_2_1#_R
SV
DC
20B
PM
_2_2#_RS
VD
B21
BP
M_2_3#_R
SV
D
K5
0223205900
PIN
EV
IEW
U5-1
H7
A20M
_B
P1.05V
nostuff51
R653
R127
51nostuff
0.22nFC
109
50Vnostuff
R118
68
1/10W976R
651
51R
645
R119
51
1K R647
1%
nostuff
R115
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1%
100nFC
111
C113
10V10V10V
100nF
750
C110
100nF
R120
51
1% R654
6.3V1%
C108
1000nF-X5R
2K R124
C594
1000nF-X5R
6.3V
1K R652
1%
nostuff
CP
U1_FE
RR
#
LCD
1_AD
ATA
2#
DM
I1_RX
P1
CP
U2_TH
ER
MD
AC
PU
2_THE
RM
DC
CLK
1_MC
H3G
PLL
CLK
1_MC
H3G
PLL#
LCD
1_AC
LK
LCD
1_AC
LK#
LCD
1_AD
ATA
0
LCD
1_AD
ATA
0#
LCD
1_AD
ATA
1
LCD
1_AD
ATA
1#
LCD
1_AD
ATA
2
DM
I1_TXN
1
DM
I1_RX
P0
DM
I1_RX
N0
DM
I1_RX
N1
CP
U1_V
ID(6:0)
CP
U1_S
TPC
LK#
CP
U1_TH
RM
TRIP
#
CP
U1_S
MI#
LCD
3_BR
IT
LCD
3_ED
ID_C
LKLC
D3_E
DID
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TALC
D3_V
DD
EN
DM
I1_TXP
0D
MI1_TX
N0
DM
I1_TXP
1
CP
U1_A
20M#
CLK
0_HC
LK0#
CLK
0_HC
LK0
CP
U1_B
SE
L0C
PU
1_BS
EL1
CP
U1_B
SE
L2
CP
U1_P
WR
GD
CP
U1_D
PR
STP
#C
PU
1_DP
SLP
#
CP
U1_IG
NN
E#
CP
U1_IN
IT#
LCD
3_BK
LTEN
CP
U1_IN
TRC
PU
1_NM
I
8-11
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential 3 / 5
VGAMISC
2 / 5
DD
R_A
EXCEPT AS AUTHORIZED BY SAMSUNG.
B
4
PROPRIETARY INFORMATION THAT IS
SA
MS
UN
G
SAMSUNG ELECTRONICS CO’S PROPERTY.
D
4
C
3
EXCEPT AS AUTHORIZED BY SAMSUNG.
3
1
THIS DOCUMENT CONTAINS CONFIDENTIAL
SAM
SUN
G PR
OPR
IET
AR
Y
DBAA
D
1
2
SAM
SUN
G PR
OPR
IET
AR
Y
1
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
1
C
PINEVIEW
(2/3)
(WW
10)
3
4
C
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
SAMSUNG ELECTRONICS CO’S PROPERTY.
ES
1 : Pull-up to +S
M
2
D
B
PROPRIETARY INFORMATION THAT IS
AA
ELE
CTR
ON
ICS
4
2
B
C
3
THIS DOCUMENT CONTAINS CONFIDENTIAL
2
50VC583 0.012nF
100nFC
641
10V
50VC582 0.012nF
665R
6421%
C10
XD
P_R
SV
D_13
D10
XD
P_R
SV
D_14
B11
XD
P_R
SV
D_15
B10
XD
P_R
SV
D_16
B12
XD
P_R
SV
D_17
C11
A7
XD
P_R
SV
D_02
D6
XD
P_R
SV
D_03
C5
XD
P_R
SV
D_04
C7
XD
P_R
SV
D_05
C6
XD
P_R
SV
D_06
D8
XD
P_R
SV
D_07
B7
XD
P_R
SV
D_08
A9
XD
P_R
SV
D_09
D9
XD
P_R
SV
D_10
C8
XD
P_R
SV
D_11
B8
XD
P_R
SV
D_12
RS
VD
_11L11
RS
VD
_TP_10
AA
6R
SV
D_TP
_11A
A7
RS
VD
_TP_12
AA
21
RS
VD
_TP_5
R5
RS
VD
_TP_6
R6
RS
VD
_TP_7
T21R
SV
D_TP
_8V
21R
SV
D_TP
_9W
21
XD
P_R
SV
D_00
D12
XD
P_R
SV
D_01
P28
DP
L_RE
FCLK
INN
Y29
DP
L_RE
FCLK
INP
Y30
DP
L_RE
FSS
CLK
INN
AA
31D
PL_R
EFS
SC
LKIN
PA
A30
HP
L_CLK
INN
W8
HP
L_CLK
INP
W9
PM
_EX
TTS#_0
J30P
M_E
XTTS
#_1_DP
RS
LPV
RK
29
PW
RO
KL5
RS
TINB
AA
3
CR
T_BLU
EP
29
CR
T_DD
C_C
LKL30
CR
T_DD
C_D
ATA
L31
CR
T_GR
EE
NP
30
CR
T_HS
YN
CM
30
CR
T_IRTN
N30
CR
T_RE
DN
31
CR
T_VS
YN
CM
29
DA
C_IR
EF
U5-3
PIN
EV
IEW
0223205900
P1.8V
_AU
X
1%R639 150
10K
1%
R138
150R640
R132
1Knostuff
1%nostuff
1% 1KR
133
10R
136
1%nostuff
1KR
125
R139 10K
RS
VD
_13
AK
8R
SV
D_14
AB
15R
SV
D_A
B15
AB
17R
SV
D_A
B17
AC
17R
SV
D_A
C17
AD
17R
SV
D_A
D17
RS
VD
_TP_13
AB
11A
B13
RS
VD
_TP_14
AB
4V
SS
_153
DD
R_A
_MA
_9A
K12
AK
24D
DR
_A_O
DT_0
AH
26D
DR
_A_O
DT_1
AH
24D
DR
_A_O
DT_2
AK
27D
DR
_A_O
DT_3
AK
21D
DR
_A_R
AS
B
AK
22D
DR
_A_W
EB
AK
28D
DR
_RPD
AJ26
DD
R_R
PUD
DR
_VR
EF
AL28
AK
29
DD
R_A
_MA
_11D
DR
_A_M
A_12
AJ11
AJ24
DD
R_A
_MA
_13A
J10D
DR
_A_M
A_14
AK
18D
DR
_A_M
A_2
AK
16D
DR
_A_M
A_3
AJ14
DD
R_A
_MA
_4A
H14
DD
R_A
_MA
_5A
K14
DD
R_A
_MA
_6A
J12D
DR
_A_M
A_7
AH
13D
DR
_A_M
A_8
DD
R_A
_DQ
_6
AB
24D
DR
_A_D
Q_60
AB
23D
DR
_A_D
Q_61
AA
23D
DR
_A_D
Q_62
W27
DD
R_A
_DQ
_63
AE
3D
DR
_A_D
Q_7
AB
6D
DR
_A_D
Q_8
AB
7D
DR
_A_D
Q_9
AH
19D
DR
_A_M
A_0
AJ18
DD
R_A
_MA
_1
AK
20D
DR
_A_M
A_10
AH
12
AD
30D
DR
_A_D
Q_50
DD
R_A
_DQ
_51A
D29
AJ30
DD
R_A
_DQ
_52A
J29D
DR
_A_D
Q_53
AE
29D
DR
_A_D
Q_54
AD
28D
DR
_A_D
Q_55
AA
24D
DR
_A_D
Q_56
AB
25D
DR
_A_D
Q_57
W24
DD
R_A
_DQ
_58W
22D
DR
_A_D
Q_59
AE
2
DD
R_A
_DQ
_40D
DR
_A_D
Q_41
AG
25A
D25
DD
R_A
_DQ
_42A
D24
DD
R_A
_DQ
_43A
C22
DD
R_A
_DQ
_44A
G24
DD
R_A
_DQ
_45A
D27
DD
R_A
_DQ
_46A
E27
DD
R_A
_DQ
_47A
G31
DD
R_A
_DQ
_48A
G30
DD
R_A
_DQ
_49
AB
3D
DR
_A_D
Q_5
DD
R_A
_DQ
_30A
J6D
DR
_A_D
Q_31
AE
19D
DR
_A_D
Q_32
AG
19D
DR
_A_D
Q_33
AF22
DD
R_A
_DQ
_34A
D22
DD
R_A
_DQ
_35A
G17
DD
R_A
_DQ
_36A
F19D
DR
_A_D
Q_37
AE
21D
DR
_A_D
Q_38
AD
21D
DR
_A_D
Q_39
AB
2D
DR
_A_D
Q_4
AE
24
AF8
DD
R_A
_DQ
_21D
DR
_A_D
Q_22
AD
11A
E10
DD
R_A
_DQ
_23A
H1
DD
R_A
_DQ
_24A
J2D
DR
_A_D
Q_25
AK
6D
DR
_A_D
Q_26
AJ7
DD
R_A
_DQ
_27A
F3D
DR
_A_D
Q_28
AH
2D
DR
_A_D
Q_29
AG
2D
DR
_A_D
Q_3
AL5
DD
R_A
_DQ
_11D
DR
_A_D
Q_12
AA
5A
B5
DD
R_A
_DQ
_13A
B9
DD
R_A
_DQ
_14A
D6
DD
R_A
_DQ
_15A
G8
DD
R_A
_DQ
_16A
G7
DD
R_A
_DQ
_17A
F10D
DR
_A_D
Q_18
AG
11D
DR
_A_D
Q_19
AF4
DD
R_A
_DQ
_2
AF7
DD
R_A
_DQ
_20
DD
R_A
_DQ
S_0
AB
8D
DR
_A_D
QS
_1A
D8
DD
R_A
_DQ
S_2
AK
5D
DR
_A_D
QS
_3A
G22
DD
R_A
_DQ
S_4
AE
26D
DR
_A_D
QS
_5A
E30
DD
R_A
_DQ
S_6
AB
27D
DR
_A_D
QS
_7
AC
4D
DR
_A_D
Q_0
AC
1D
DR
_A_D
Q_1
AE
5D
DR
_A_D
Q_10
AG
5
AF30
DD
R_A
_DM
_6D
DR
_A_D
M_7
AB
26
AD
2D
DR
_A_D
QS
B_0
AD
7D
DR
_A_D
QS
B_1
AD
10D
DR
_A_D
QS
B_2
AK
3D
DR
_A_D
QS
B_3
AG
21D
DR
_A_D
QS
B_4
AG
27D
DR
_A_D
QS
B_5
AF29
DD
R_A
_DQ
SB
_6A
A27
DD
R_A
_DQ
SB
_7
AD
3
DD
R_A
_CK
_4
AH
22D
DR
_A_C
SB
_0A
K25
DD
R_A
_CS
B_1
AJ21
DD
R_A
_CS
B_2
AJ25
DD
R_A
_CS
B_3
AD
4D
DR
_A_D
M_0
AA
9D
DR
_A_D
M_1
AE
8D
DR
_A_D
M_2
AJ3
DD
R_A
_DM
_3A
D19
DD
R_A
_DM
_4A
J27D
DR
_A_D
M_5
DD
R_A
_CK
B_0
AC
13D
DR
_A_C
KB
_1
AD
15D
DR
_A_C
KB
_3A
G13
DD
R_A
_CK
B_4
AH
10D
DR
_A_C
KE
_0A
H9
DD
R_A
_CK
E_1
AK
10D
DR
_A_C
KE
_2A
J8D
DR
_A_C
KE
_3
AG
15D
DR
_A_C
K_0
AD
13D
DR
_A_C
K_1
AC
15D
DR
_A_C
K_3
AF13
0223205900
PIN
EV
IEW
U5-2
DD
R_A
_BS
_0A
J20A
H20
DD
R_A
_BS
_1A
K11
DD
R_A
_BS
_2
AJ22
DD
R_A
_CA
SB
AF15
50VC581 0.012nF
R673
10K
100nF10V
C640
1% 80.6R
687
P1.8V
_AU
X
P3.3V
1% 10KR
671
1%R
68880.6
1%R
1341K
10R
137
R689
10K
P1.8V
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X
1%
R641 1501%
nostuffR
6720
CR
T3_DD
CD
ATA
CR
T3_DD
CC
LK
CH
P3_D
PR
SLP
VR
MC
H3_E
XTTS
0#
CR
T3_BLU
EC
RT3_G
RE
EN
CR
T3_RE
D
CLK
1_DR
EFC
LK#
CLK
1_DR
EFC
LK
CLK
1_DR
EFS
SC
LK#
CLK
1_DR
EFS
SC
LK
CR
T3_BLU
EC
RT3_G
RE
EN
CR
T3_RE
D
CR
T3_HS
YN
CC
RT3_V
SY
NC
KB
C3_P
WR
GD
PLT3_R
ST#
CLK
0_HC
LK1
CLK
0_HC
LK1#
ME
M1_A
DQ
S(7:0)
ME
M1_A
DQ
S#(7:0)
ME
M1_A
DM
(7:0)
ME
M1_A
DQ
(63:0)
ME
M1_A
BS
1M
EM
1_AB
S2
ME
M1_A
BS
0
ME
M1_C
S1#
ME
M1_C
S0#
ME
M1_C
KE
1M
EM
1_CK
E0
ME
M1_O
DT1
ME
M1_O
DT0
CLK
1_MC
LK0#
CLK
1_MC
LK0
CLK
1_MC
LK1
CLK
1_MC
LK1#
ME
M1_A
CA
S#
ME
M1_A
RA
S#
ME
M1_A
WE
#
ME
M1_A
MA
(0:14)
8-12
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
5 / 5
GND
4 / 5
CFX/MCH
CPU
DDREXP/CRT/PLL
LVDS
DMIPOWER
B
4
C
SAM
SUN
G PR
OPR
IET
AR
Y1
ELE
CTR
ON
ICS
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
D
C
4
PINEVIEW
(3/3)
3
+VC
CP
C6
+VC
CA
_DM
I
+VC
CA
PLL_D
MI
B
SAMSUNG ELECTRONICS CO’S PROPERTY.
THIS DOCUMENT CONTAINS CONFIDENTIAL
EXCEPT AS AUTHORIZED BY SAMSUNG.
23
: Noise coupling
+VC
CS
FR_D
MIH
MP
LL
+VC
C_R
ING
+VC
CA
_VC
CD
1
A
SA
MS
UN
G
0 ohm (W
W12)
(Next : TB
D)
2
PROPRIETARY INFORMATION THAT IS
A D
6.3V1000nF-X
5R
C589
C6276.3V20%
22000nF-X5R
P1.05V
6.3V1000nF-X
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10nFC
629
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20%6.3V
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18PG
181SN
1
B514
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1000nF-X5R
C625
C620
100nF10V
6.3V
1000nF-X5R
C628
nostuff
1000nF-X5R
C587
6.3V
1000nF-X5R
C623
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6.3V P1.05V
6.3V
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P1.8V
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OR
E
22000nF-X5R
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nostuff
C591
1000nF-X7R22000nF-X
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618
6.3V20%
C646
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20%6.3V
100nFC
621
6.3V
nostuff
10V
P1.8V
nostuff
C576
1000nF-X5R
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X
6.3V1000nF-X
5RC
120nostuff
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595
4700nF-X5R
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C601
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6.3V
6.3V
6.3V
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C599
1000nF-X5R
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5R
C644
1000nF-X5R
C138
6.3V
nostuff
6.3V 1000nF-X5R
C598
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C592
1000nF-X5R
6.3V
6.3V
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P1.8V
VC
C_G
IOT31
VC
C_LG
I_VID
A21
VS
SS
EN
SE
B29
nostuff
C624
100nF
L21V
CC
_38N
14V
CC
_39N
16
VC
C_4
B24
VC
C_40
N19
VC
C_41
N21
VC
C_5
B25
VC
C_6
B26
VC
C_7
B27
VC
C_8
C24
VC
C_9
C26
J17V
CC
_28J19
VC
C_29
J21
VC
C_3
B23
VC
C_30
J22V
CC
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15V
CC
_32K
17V
CC
_33K
21V
CC
_34L14
VC
C_35
L16V
CC
_36L19
VC
C_37
VC
C_18
F22V
CC
_19F25
VC
C_2
A27
VC
C_20
G19
VC
C_21
G21
VC
C_22
G24
VC
C_23
H17
VC
C_24
H19
VC
C_25
H22
VC
C_26
H24
VC
C_27
AL25
VC
C_0
A23
VC
C_1
A25
VC
C_10
D23
VC
C_11
D24
VC
C_12
D26
VC
C_13
D28
VC
C_14
E22
VC
C_15
E24
VC
C_16
E27
VC
C_17
F21
B2
VC
CR
ING
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ST_2
C2
VC
CS
EN
SE
C29
VC
CS
FR_A
B_D
PL
AC
31
VC
CS
FR_D
MIH
MP
LLA
A1
VC
CS
M_0
AK
13V
CC
SM
_1A
K19
VC
CS
M_2
AK
9V
CC
SM
_3A
L11V
CC
SM
_4A
L16V
CC
SM
_5A
L21V
CC
SM
_6
VC
CG
FX_5
V13
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8-13
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
32
EXCEPT AS AUTHORIZED BY SAMSUNG.
A
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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8-14
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
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MS
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
4 / 5
POWER
5 / 5
2
SAMSUNG ELECTRONICS CO’S PROPERTY.
Tigerpoint (3/3)DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
A
Intel default : 0 ohm (option : bead)
2
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EXCEPT AS AUTHORIZED BY SAMSUNG.
SAM
SUN
G PR
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AR
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PROPRIETARY INFORMATION THAT IS
PI recom
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SA
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
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Samsung
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1/2
2/2
SA
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8-18
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
PROPRIETARY INFORMATION THAT IS
SAM
SUN
G PR
OPR
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AR
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SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
B
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PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
SA
MS
UN
G
THIS DOCUMENT CONTAINS CONFIDENTIAL
3
EXCEPT AS AUTHORIZED BY SAMSUNG.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
C D
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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DR
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M
8-21
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
SAM
SUN
G PR
OPR
IET
AR
Y
S/B
with Low
Voltage IO
S/B
without Low
Voltage IO
PROPRIETARY INFORMATION THAT IS
Pin9 : 1.5V
Pin9 : 3.3V
ELE
CTR
ON
ICS
1
SAMSUNG ELECTRONICS CO’S PROPERTY.
D
SA
MS
UN
G
B D
(MIC
5252-4.75BM
5)
3
ALC
269Q_V
B_G
R
ALC
269Q_V
B_G
RB
RG
ND
_SH
OR
T
Do not m
ake a test point in these nets
4
A
C
EXCEPT AS AUTHORIZED BY SAMSUNG.
2
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
for EM
I
2nd Vendor : 1203-003344
1
4
2
Codec P
in9 Setting
3
A
C
THIS DOCUMENT CONTAINS CONFIDENTIAL
15KR716
1%
nostuff
50V
C713
1nF
BLM
18PG
181SN
1B
5
20KR
1611%
6.3VC
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SM
T50-1005
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523
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TPA
R
SH
OR
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OR
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10
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AL
49 30
MIC
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24
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15
MIC
1_L_B21
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22
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1_VR
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9
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SS
7
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8-22
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
PROPRIETARY INFORMATION THAT IS
B
2
B
31
D
A C
ELE
CTR
ON
ICS
A
3
2
C
4
EXCEPT AS AUTHORIZED BY SAMSUNG.
SA
MS
UN
G
4SA
MSU
NG
PRO
PRIE
TA
RY
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
Only for P
ON
TIAC
model
1
THIS DOCUMENT CONTAINS CONFIDENTIAL
D
SAMSUNG ELECTRONICS CO’S PROPERTY.
SHORT50
INSTPAR
G_A
UD
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1201-001991
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
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Samsung
Confidential
L RL R
THIS DOCUMENT CONTAINS CONFIDENTIAL
4
SA
MS
UN
G
HE
AD
PH
ON
E
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1
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AR
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ELE
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ON
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
3
EXCEPT AS AUTHORIZED BY SAMSUNG.
PROPRIETARY INFORMATION THAT IS
MIC
JAC
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SAMSUNG ELECTRONICS CO’S PROPERTY.
3
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8-24
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
Confidential
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Samsung
Confidential
THIS DOCUMENT CONTAINS CONFIDENTIAL
3
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAM
SUN
G PR
OPR
IET
AR
Y1
B
4
PROPRIETARY INFORMATION THAT IS
2
D
Marvell 88E
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2
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8-25
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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N220, N210, N150, NB30
Samsung
Confidential
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Confidential
Samsung
Confidential
BA
1 1
A
ELE
CTR
ON
ICS
SAM
SUN
G PR
OPR
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AR
Y
SA
TA H
DD
CO
NN S
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I/F CO
NN
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44
33
22
EXCEPT AS AUTHORIZED BY SAMSUNG.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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PROPRIETARY INFORMATION THAT IS
THIS DOCUMENT CONTAINS CONFIDENTIAL
B
SA
MS
UN
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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ontiac only
1
Bottom
THIS DOCUMENT CONTAINS CONFIDENTIAL
2
SAMSUNG ELECTRONICS CO’S PROPERTY.
DA B
Near to M
ini card Connector
WLA
N, 5.2m
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SA
MS
UN
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Mini P
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xpress Card
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
50.95 mm
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for antenna sub-board hole
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8-27
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
2 2
Chargeable U
SB
For EM
I
SA
MS
UN
GE
LEC
TRO
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S
AA
BB
CC
DD
44
33
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
Need 4A
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11
SAM
SUN
G PR
OPR
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AR
YTHIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
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8-28
8. Block Diagram and Schematic
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THIS DOCUMENT CONTAINS CONFIDENTIAL
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3
EXCEPT AS AUTHORIZED BY SAMSUNG.
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8. Block Diagram and Schematic
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40 mil trace for m
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SAM
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SAMSUNG ELECTRONICS CO’S PROPERTY.
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D
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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8. Block Diagram and Schematic
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IN B
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SA
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UN
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C
SAMSUNG ELECTRONICS CO’S PROPERTY.
should be at the thermal sensor side.
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8-31
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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lide S
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SUN
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YTHIS DOCUMENT CONTAINS CONFIDENTIAL
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
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LID
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
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ITCH
LOG
ICEXCEPT AS AUTHORIZED BY SAMSUNG.
1 1
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PROPRIETARY INFORMATION THAT IS
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UN
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CTR
ON
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A
B
3
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SAM
SUN
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SAMSUNG ELECTRONICS CO’S PROPERTY.
2
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
Only For C
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THIS DOCUMENT CONTAINS CONFIDENTIAL
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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21
SAMSUNG ELECTRONICS CO’S PROPERTY.
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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3
DBA
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
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SAM
SUN
G PR
OPR
IET
AR
Y4
D
EXCEPT AS AUTHORIZED BY SAMSUNG.
FOR
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I
ELE
CTR
ON
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PROPRIETARY INFORMATION THAT IS
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THIS DOCUMENT CONTAINS CONFIDENTIAL
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
SAMSUNG ELECTRONICS CO’S PROPERTY.
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
1
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
RdsO
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THIS DOCUMENT CONTAINS CONFIDENTIAL
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A D
PROPRIETARY INFORMATION THAT IS
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
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Samsung
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Samsung
Confidential
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
C
2
1
PROPRIETARY INFORMATION THAT IS
THIS DOCUMENT CONTAINS CONFIDENTIAL
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SAMSUNG ELECTRONICS CO’S PROPERTY.
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
A D
P12V
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WS
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22
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4
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
1
SAM
SUN
G PR
OPR
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AR
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
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DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
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- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
Samsung
Confidential
Samsung
Confidential
Samsung
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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
N220, N210, N150, NB30
