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AlGaInP UHB-LEDs had have been widely used as light source in various application applications . With Despite its high superior efficiency, UHB-LED required requires a the highest light output power at a higher high current density densities to fulfill the costs energy requirements of their market. As a consequent consequence , reliability safety concerns at when operating at high current density densities is become a major issue in when promote promoting the use of optoelectronic devices for general lighting. The degradation of commercial HB-LED chips have has been widely studied and numerous accelerated test tests of with respect to current, temperature, and humidity have been conducted. However, few researches research on the degrading degradation of AlGaInP UHB-LEDs with respect to the chip’s ohmic metal structure design of chips has been conducted are relatively few . To understand the relationship between the ohmic metal percentage of the a chip and its reliability, chips are were designed with an ohmic metal ratio ratios which will range between ranging from 2% to 50% and burn-in at 1 A for 6,000 hours hrs . In addition, to determine the resulting temperature in relation to ohmic metal design, chips were examined via using infrared image microscope microscopy . After 100 hours hrs burn- in, aging results of the 10 A μA current drives shows show that the varying designs is exhibit almost similar voltage degradations due to the same epitaxy quality within a wafers. Moreover, the aging results at of the 1 A current drives shown demonstrate that the lower ohmic metal ratio result results in the highest power output and intensity degradations. The stress temperature which arised that arises from the power output were is the main primary mechanisms mechanism that accelerate accelerated dopant diffusion of the doping into a multi-quantum well, and This mechanism will also generate non-recombination centres centers within 100 hours hrs of aging. ; this The stress temperature was examining examined by using an infrared imaging image microscopes microscopy . Slight Minimal degradations had been observed after 100 to 6,000 hours hrs of aging. With Using an exponential regression of the different various designs based on regulations, constructive design guideli ne guidelines were conceptualize conceptualized for commercial used use . Comment [PSJ1]: Non-standard abbreviations must be spelled out at first mention. This rule applies to all other instances throughout the text.

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AlGaInP UHB-LEDs had have been widely used as light source in various

applicationapplications. With Despite its high superior efficiency, UHB-LED required requires a

the highest light output power at a higherhigh current density densities to fulfill the costs energy

requirements of their market. As a consequentconsequence, reliability safety concerns at when

operating at high current density densities is become a major issue in when promote promoting

the use of optoelectronic devices for general lighting. The degradation of commercial HB-LED

chips have has been widely studied and numerous accelerated test tests of with respect to current,

temperature, and humidity have been conducted. However, few researches research on the

degrading degradation of AlGaInP UHB-LEDs with respect to the chip’s ohmic metal structure

design of chips has been conductedare relatively few. To understand the relationship between the

ohmic metal percentage of the a chip and its reliability, chips are were designed with an ohmic

metal ratio ratios which will range betweenranging from 2% to 50% and burn-in at 1 A for 6,000

hourshrs. In addition, to determine the resulting temperature in relation to ohmic metal design,

chips were examined via using infrared image microscopemicroscopy. After 100 hours hrs burn-

in, aging results of the 10 AµA current drives shows show that the varying designs is exhibit

almost similar voltage degradations due to the same epitaxy quality within a wafers. Moreover,

the aging results at of the 1 A current drives shown demonstrate that the lower ohmic metal ratio

result results in the highest power output and intensity degradations. The stress temperature

which arisedthat arises from the power output were is the main primary mechanisms mechanism

that accelerate accelerated dopant diffusion of the doping into a multi-quantum well, and This

mechanism will also generate non-recombination centres centers within 100 hours hrs of aging.;

this The stress temperature was examining examined by using an infrared imaging image

microscopesmicroscopy. Slight Minimal degradations had been observed after 100 to 6,000

hours hrs of aging. With Using an exponential regression of the different various designs based

on regulations, constructive design guideline guidelines were conceptualize conceptualized for

commercial useduse.

Comment [PSJ1]: Non-standard abbreviations

must be spelled out at first mention. This rule applies to all other instances throughout the text.