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Datasheet
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
RUR020N02 Nch 20V 2A Power MOSFET
lOutline
VDSS 20VRDS(on) (Max.) 105mW
ID 2APD 1W
lFeatures lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Type
Packaging Taping
lApplication Reel size (mm) 180
Road SW Tape width (mm) 8
Basic ordering unit (pcs) 3,000
Drain - Source voltage VDSS 20 V
Taping code TL
Marking XK
lAbsolute maximum ratings(Ta = 25°C)
Parameter Symbol Value Unit
Continuous drain current ID *1
2 A
Pulsed drain current ID,pulse *2
6 A
Gate - Source voltage VGSS 10 V
PD *3 1.0 W
Range of storage temperature Tstg -55 to +150 °C
PD *4 0.54 W
Power dissipation
Junction temperature Tj 150 °C
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain
TSMT3
1/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
lThermal resistance
Parameter SymbolValues
UnitMin. Typ. Max.
Thermal resistance, junction - ambient RthJA *4 - - 231 °C/W
Thermal resistance, junction - ambient RthJA *3 - - 125 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
V
Breakdown voltagetemperature coefficient
ΔV(BR)DSS
ΔTj
ID = 1mAreferenced to 25°C
- 20 - mV/°C
Drain - Source breakdownvoltage
V(BR)DSS VGS = 0V, ID = 1mA 20 - -
mA
Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA
Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1
V
Gate threshold voltagetemperature coefficient
ΔV(GS)th
ΔTj
ID = 1mAreferenced to 25°C
- -1.9 - mV/°C
Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 0.3 - 1.0
130 185
VGS=1.5V, ID=0.4A
Static drain - sourceon - state resistance RDS(on)
*5
VGS=4.5V, ID=2A - 75 105
- 170 240
VGS=4.5V, ID=2A, Tj=125°C
W
Transconductance gfs *5 VDS = 10V, ID = 2A 1.8 4.2 - S
- 120 170
Gate input resistannce RG f = 1MHz, open drain - 24 -
mW
VGS=2.5V, ID=2A - 95 135
VGS=1.8V, ID=1A -
2/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
*5 Pulsed
lElectrical characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
pFOutput capacitance Coss VDS = 10V - 45 -
Reverse transfer capacitance Crss f = 1MHz
Input capacitance Ciss VGS = 0V - 180 -
- 25 -
UnitMin. Typ. Max.
Turn - on delay time td(on) *5 VDD ⋍ 10V, VGS = 4.5V - 6 -
nsRise time tr
*5 ID = 1A - 17 -
Turn - off delay time td(off) *5 RL = 10W - 30 -
Fall time
-Total gate charge Qg *5
-
lGate Charge characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
tf *5 RG = 10W - 30
Max.
- 0.6 -
Gate - Drain charge Qgd *5 - 0.4 -
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ.
nCGate - Source charge Qgs
*5VDD ⋍ 10V, ID = 2AVGS = 4.5V
VDD ⋍ 10V, ID = 2AVGS = 4.5V - 2.0
A
Forward voltage VSD *5 VGS = 0V, Is = 2A - - 1.2 V
Inverse diode continuous,forward current IS *1 Ta = 25°C - - 0.8
3/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
Ta=25ºC Single Pulse
Fig.1 Power Dissipation Derating Curve
Pow
er D
issi
patio
n :
PD/P
D m
ax. [
%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Dra
in C
urre
nt :
I D [A
]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Nor
mal
ized
Tra
nsie
nt T
herm
al R
esis
tanc
e : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak
Tra
nsie
nt P
ower
: P
(W)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 50 100 150 2000.01
0.1
1
10
0.1 1 10 100
Operation in this area is limited by RDS(on)
(VGS = 4.5V )
PW = 100ms PW = 1ms PW = 10ms
DC Operation
Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
Ta=25ºC Single Pulse
Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm)
top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle
4/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Dra
in C
urre
nt :
I D [A
]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
I D [A
]
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1
VGS= 1.2V
VGS= 1.3V
VGS= 1.5V
VGS= 1.8V
VGS= 10V VGS= 4.5V VGS= 2.5V
Ta=25ºC Pulsed
0
1
2
3
4
0 2 4 6 8 10
Ta=25ºC Pulsed VGS= 4.5V
VGS= 2.5V VGS= 1.8V
VGS= 1.2V
VGS= 1.3V
VGS= 1.5V
5/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
Fig.7 Breakdown Voltage vs. Junction Temperature
Dra
in -
Sour
ce B
reak
dow
n Vo
ltage
: V
(BR
)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage vs. Junction Temperature
Gat
e Th
resh
old
Volta
ge :
VG
S(th
) [V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Tran
scon
duct
ance
: g f
s [S]
Drain Current : ID [A]
Dra
in C
urre
nt :
I D [A
]
0
20
40
60
-50 0 50 100 150
VGS=0V ID=1mA pulsed
0
0.2
0.4
0.6
0.8
1
-50 0 50 100 150
VDS=10V ID=1mA pulsed
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
VDS= 10V Pulsed
Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC
0.1
1
10
0.01 0.1 1 10
VDS= 10V Pulsed
Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC
6/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Dra
in C
urre
nt D
issi
patio
n
: ID/I D
max
. (%
)
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I)
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
50
100
150
-50 -25 0 25 50 75 100 125 150
VGS=4.5V ID=2.0A pulsed
0
50
100
150
200
250
300
0 2 4 6 8 10
ID= 1.0A
ID= 2.0A
Ta= 25ºC Pulsed
10
100
1000
0.01 0.1 1 10
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
.
Ta= 25ºC Pulsed
7/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
Fig.15 Static Drain-Source On-State Resistance vs. Drain Current(II)
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
RD
S(on
) [m
W]
Drain Current : ID [A]
Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III)
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
RD
S(on
) [m
W]
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV)
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Drain Current : ID [A]
10
100
1000
0.01 0.1 1 10
VGS= 4.5V Pulsed
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
10
100
1000
0.01 0.1 1 10
VGS= 2.5V Pulsed
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
10
100
1000
0.01 0.1 1 10
VGS= 1.8V Pulsed
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
8/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lElectrical characteristic curves
Fig.18 Typical Capacitance vs. Drain - Source Voltage
Cap
acita
nce
: C [p
F]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Gat
e - S
ourc
e Vo
ltage
: V G
S [V
]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switc
hing
Tim
e : t
[ns]
Drain Current : ID [A]
Fig.21 Source Current vs. Source Drain Voltage
Sour
ce C
urre
nt :
I S [A
]
Source-Drain Voltage : VSD [V]
10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss Ta=25ºC f=1MHz VGS=0V
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V Pulsed
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Ta=25ºC VDD= 10V ID= 2A RG=10W Pulsed
1
10
100
1000
0.01 0.1 1 10
td(on)
td(off)
Ta=25ºC VDD= 10V VGS=4.5V RG=10W Pulsed
tr
tf
9/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
10/11 2012.06 - Rev.B
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
Data SheetRUR020N02
lDimensions (Unit : mm)
Dimension in mm/inches
TSMT3
Patterm of terminal position areas
D
E
E
Lp
L1
A3
c
A
A1
A2
S
A
b2
l1
Q
e
e1
H
e bx S A
MIN MAX MIN MAXA - 1.00 - 0.039A1 0.00 0.10 0 0.004A2 0.75 0.95 0.03 0.037A3b 0.35 0.50 0.014 0.02c 0.10 0.26 0.004 0.01D 2.80 3.00 0.11 0.118E 1.50 1.80 0.059 0.071eHE 2.60 3.00 0.102 0.118L1 0.30 0.60 0.012 0.024Lp 0.40 0.70 0.016 0.028Q 0.05 0.25 0.002 0.01x - 0.20 - 0.008
MIN MAX MIN MAXe1b2 0.70 - 0.028l1 - 0.90 - 0.035
0.25 0.01
DIMMILIMETERS INCHES
2.10 0.08
DIMMILIMETERS INCHES
0.95 0.04
11/11 2012.06 - Rev.B
R1120Awww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.
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