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COMPLETE TEARDOWN WITH:
• Detailed photos
• Precise measurements
• Material analysis
• Manufacturing process flow
• Supply chain evaluation
• Manufacturing cost analysis
• Selling price estimation
• Comparison between Rohm’s planar and trench SiC MOSFETs
• Comparison between Rohm’s and Cree’s 1200V MOSFET modules
ROHM 1200V Trench SiC MOSFETBSM180D12P3C007 Module
Title: ROHM BSM180D12P3C007 ModulePages: 94
Date: July 2016
Format: PDF & Excel file
Price: Full report: EUR 3,490
The BSM180D12P3C007 is a1200V 180A SiC MOSFET modulefrom Rohm for high powerapplications like motor drives,inverters, photovoltaics andinduction heating equipment. Incomparison with the previousgeneration of SiC MOSFETs,which have a planar structure,the trench structure halves on-
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio
than the previous generation
resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiCpower MOSFET dies with a current of 36A and the innovative trenchstructure. Ten SiC Schottky Barrier diodes are also integrated into thepower module.
The BSM180D12P3C007 offers a higher operating temperature (up to150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysisof the packaging and the components,with images of the complex trench SiCstructure.
It also includes production cost analysisand overall comparison with the planar SiCMOSFET from Rohm and the CreeCAS120M12BM2 module.
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TABLE OF CONTENTS
Overview/Introduction
• Executive Summary• Reverse Costing Methodology
Company Profile
Physical Analysis
• Synthesis of the Physical Analysis• Package Analysis View, dimensions and marking Housing Base plate cross-section DBC cross-section
• MOSFET Analysis Dimension Die process Die cross-section
• SBD Diode Analysis Dimension Die process Die cross-section
• Comparison between Rohm’s planar and trench MOSFETs
Manufacturing Process Flow
• Overview• MOSFET and Diode Process Flow• Package Process Flow• Description of Wafer Fabrication
Units
Cost Analysis
• Synthesis of the Cost Analysis• Main Steps of Economic Analysis• Yields Explanation• MOSFET Cost Analysis Wafer cost hypothesis MOSFET wafer cost Breakdown by process step MOSFET probe cost MOSFET die cost
• Cost Analysis Diode• Cost Analysis BSM180D12P3C007 Assessing BOM DBC cost BSM180D12P3C007 module
cost
Comparison between BSM180D12P3C007 and CAS120M12BM2
• Module• MOSFET• Diode• Cost
Estimated Manufacturer Price Analysis
• Manufacturers’ ratios• Estimated manufacturer price
Author:Elena Barbarini
Elena is in charge of costinganalyses for MEMS, IC andPower Semiconductors. She hasa deep knowledge of ElectronicsR&D and Manufacturingenvironment. Elena holds aMaster in Nanotechnologies anda PhD in Power Electronics.
Nicolas is in charge of physicalanalysis. He has a deepknowledge in chemical andphysical analyses. He previouslyworked in microelectronics R&Dfor CEA/LETI in Grenoble and forSTMicroelectronics in Crolles.
Author (Lab):NicolasRadufe
POWER Cosim+
Cost simulation tool toevaluate the cost of anyPOWER process or device:from single chip to complexstructures.
POWER CoSim+ is a process-based costing tool used toevaluate the manufacturingcost per wafer using your owninputs or using the pre-defined parameters includedin the tool.
All these tools are on saleunder corporate licence.
ANALYSIS PERFORMED WITH OUR COSTING TOOL POWER COSIM+
Power CoSim+
Wolfspeed C3MTM Platform SiC 900V MOSFET
(coming soon)
CREE 1200V SiC Module - 2nd
Generation SiC MOSFET with Z-Rec Diode SiC
Rohm SCH2080KE SiC
Transistor - 2nd Generation
SiC MOSFET with SiC-SBD
Wolfspeed’s C3MTM platform isthe first 900V SiC MOSFET on themarket. Thanks to its highercurrent density and low Rdson, itcompetes directly with SJMosfetsand GaN HEMTs!
The CAS120M12BM2 from CREESemiconductor is a power moduleof 2 transistors with a breakdownvoltage of 1200V for a current of138A (90°C), an ultra low on-resistance (13mΩ) and more…
With a breakdown voltage of1200V for a current of 28A(100°C), the SCH2080KE offers avery low on-resistance (80mΩ), afast switching speed and a fastreverse recovery.
Pages: 100Date: July 2016Full report: EUR 3,290*
Pages: 136Date: February 2015Full report: EUR 3,490*
Pages: 100Date: March 2014Full report: EUR 2,990*
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