Rockwell Profile

Motorola Confidential Proprietary 1

Steve Rockwell

RF / Microwave / mm-Wave Design Expertise mm-Wave design & applications (1 thru 100 GHz) Gigabit mm-Wave radio front end design & integration Actives & Passives characterization & modeling (on-wafer specialist) III-V MMIC design EM design tools

20+ years Experience Defense / Aerospace / Space / Commercial Telecommunications / Semiconductor Transistor > IC > Component > Front End > Sub-System > System

Excellence in Varied Roles: Independent Contributor Team Leader / Project Leader Engineering Manager / Program Manager

Steve K. Rockwell - Overview


Steve Rockwell

Key Accomplishments Demonstrated low cost 60GHz high multi-Gbps radio

systems and front ends by developing prototype implementations in progressively smaller package sizes from 2003 to 2008.

Proved feasibility of high speed download in a cell phone by integrating a 60GHz transceiver in a Motorola Q in 2008.

Led prototype development and systems analysis of 60 GHz backhaul link for Motorola Broadband product division. Completed detailed link availability and budget analysis and supported successful field testing.

Successfully completed JDA with Phiar Corp. demonstrating metal-insulator electronics in high speed millimeter-wave front end.


Steve Rockwell

Gigabit mm-Wave Radio Long Range for Backhaul & Networks Short Range for consumer & portable Link Budgets, Design & Analysis, Link

Availability, Prototyping

0.1

0.5

10

500

Tra

nsm

iss

ion

rat

e (

Mb

ps)

Range (meters)

1000802.15.3c /

ECMA / WirelessHD

10 100 1000 10 000 100 000

BlackberryGSM/TDMA

GPRS/EDGE

UMTS / HSDPA / 1xEVDO

ZigBee802.15.4

802.11bWiFi1

5

50

5000

802.16WiMax

100

802.11a/gWiFi

1

Bluetooth802.15.1

UWB / WiMedia

802.16e / 20WiMax

802.11nWiFi

NF

C

2009 Wireless Landscape

0.1

0.5

10

500

Tra

nsm

iss

ion

rat

e (

Mb

ps)

Range (meters)

1000802.15.3c /

ECMA / WirelessHD

10 100 1000 10 000 100 000

BlackberryGSM/TDMA

GPRS/EDGE

UMTS / HSDPA / 1xEVDO

ZigBee802.15.4

802.11bWiFi1

5

50

5000

802.16WiMax

100

802.11a/gWiFi

1

Bluetooth802.15.1

UWB / WiMedia

802.16e / 20WiMax

802.11nWiFi

NF

C

2009 Wireless Landscape


Steve Rockwell

Gigabit mm-Wave Radio – Handset Integration

60GHz TXCVR in a handset

Handset Architecture to Download Files to Onboard USB Memory


Steve Rockwell

Radio Systems Design / AnalysisMinimum Link Requirement for 5 Nines

V-Band vs. E-Band, Region K

120

130

140

150

160

170

180

190

200

210

220

230

240

250

260

270

280

290

300

500 1000 1500 2000 2500 3000

Range (m)

Lin

k B

ud

get

(dB

)

V-Band

E-Band


Steve Rockwell

RX required vs TX power @ Different Distances

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26

TX Power (dBm)

RX

Sen

sitv

ity

(dB

m)

RX @ 500m

RX @ 1000m

RX @ 1500m

RX @ 2000m

Radio Systems Design / Analysis

Main Signal Chain Component

Total Received Power at Antenna Duplexer B2B Filter LNA Filter B2B LNA Filter Filter LNA

Desired Power to Detector

Power (dBm) -50.0 -53.0 -55 -56.5 -42.5 -45.5 -47.5 -31.5 -33 -36 -20 -20 dBmGain (dB) -3 -2 -1.5 14 -3 -2 16 -1.5 -3 16

P1dB 99 99 99 10 99 10 10 99 100 10

Interfering Signal Chain Component

Power From TX to

Diplexer Duplexer B2B Filter LNA Filter B2B LNA Filter Filter LNA

Out of Band

Power to Detector

Power (dBm) 20.0 -5 -7 -32 -18 -33 -35 -19 -44 -59 -43 -43 dBmGain (dB) -25 -2 -25 14 -15 -2 16 -25 -15 16


Steve Rockwell

Auto Radar

Lane ChangeSupport

Lane Change Support

Lane ChangeSupport

Lane Change Support

AdaptiveCruiseControl

LaneDepartureWarning

Side Crash DetectionParking Support

Side Crash DetectionParking Support

Blind Spot DetectionBlind Spot Detection

Analysis tool to estimate target reflections, resolution, phase noise

effects, etc.


Steve Rockwell

MMIC Design 30 GHz LNA Design on UMS PH25

(.25um) PHEMT Project canceled before going to fab

8 Watt 3.5 GHz PA Design on Freescale High Voltage PHEMT Parts fabricated Early/soft breakdown caused high gate

leakage preventing full performance 60 GHz MIIM Detector

Modeled

Measured

Circuit Design

Bias Tee

60GHz FilterInput Match

Diode


Steve Rockwell

Foundry / IC Technology GAAS

MHEMT

INP

Imax GmMax

Fmin @

26ghz

Ga @

26ghz

Max Pwr Density @26ghz

Max PAE

@26ghzFOUNDRY PROCESS DEVICE mA/mm mS/mm Off On dB dB mW/mm %

BAE INP phemt No 0.10 ? Yes 0.8 13

HRL INP phemt No 0.10 3 Yes 250 600 700 950 5

OMMIC MHEMT phemt Yes 0.15 3 Yes 170 700 10 6

PSRL MHEMT phemt August 0.15 3 No

RAYTHEON GAAS phemt Yes 0.15 4 Yes 45 700 12 500

RAYTHEON MHEMT phemt Yes 0.18 4 Yes 130 185 660 790 8 3 1.1 10

TRIQUINT-TX GAAS phemt No 0.25 4 Yes 45 75 510 375 20 1.7 45

TRIQUINT-TX MHEMT phemt No 0.15 4 Yes 120 10 3 300 47

UMS GAAS phemt Yes 0.15 4 Yes 110 550 640 4 300

UMS GAAS phemt Yes 0.25 4 Yes 90 500 5 1.1 6 250

VELOCIUM (TRW) GAAS phemt Yes 0.1 4 Yes 120 250 700 650 7.5 500* 48*

VELOCIUM (TRW) INP phemt No 0.10 3 Yes 180 350 900 2.5

WIN MHEMT phemt Yes 0.15 6 Yes 120 700 650 11 6 1.2 9 300* 60*

XX Motorola Measurement of Samples* 10 ghz load pull

Backside Processes

Vbgd/VbceSamples

in Hand?

Gate Length(Emitter length)

Ft (ghz)

Fmax(ghz)

Wafer Size(in)

GaAs Foundry Review Summary Compiled in 2002 for 60 GHz front end designs

SiGe Foundry Review Summary Compiled in 2005 for mm-Wave GHz design

Technology

Frequency

Power

Efficiency

Noise Phase Noise

Passives

Integration1

Cost2

GaAs -pHEMT

Good Excellent Fair Good Fair Excellent Fair Fair

InP HEMT Excellent Fair Excellent Excellent Fair Excellent Fair Poor

Metamorphic HEMT

Excellent Good Excellent Excellent Fair Excellent Fair Fair

GaAs HBT Fair Excellent Good Poor Excellent Excellent Fair Fair

InP HBT Excellent Good Good Fair Excellent Excellent Fair Poor

SiGe HBT Fair Poor Poor Poor Good Poor Excellent Good

1 – Integration with other functions such as baseband, digital, passives, etc. 2 - Cost is volume driven and hence difficult to compare established processes with emerging ones.


Steve Rockwell

Passives & Packaging Design

Vialess CPW Probe Transition Silicon 5 metal layer stack

Integrated LCP on FR4

M ax O pe rating Fre q v s S ubstrate T h ickne ss E r= 2.9

0

50

100

150

200

250

300

350

4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

S u b stra te T h ickn e ss (m ils)

Fre

qu

en

cy

(G

Hz

)

Er = 2 .9

Er = 2

Er = 1 .5


Steve Rockwell

Device Modeling & Characterization Led on-wafer device characterization in support of modeling

team at TI (1991-95) GaAs MESFET/HEMT/HBT

S-Parms up to 50GHZ Load / Source Pull

Lead Device Modeler for MMW projects at Mot Labs (2000-2005) Developed transmission line system approach for standard

BiCmos silicon Lead characterization and benchmarking of emerging

mHEMT/ InP / SiGe technologies

freq (1.000GHz to 60.00GHz)

Smea

s2(1

,1)

Smod

2(1,

1)

f req (1.000GHz to 60.00GHz)

Smea

s2(2

,2)

Smod

2(2,

2)

10 20 30 40 500 60

0

5

10

15

20

-5

25

freq, GHz

dB(S

mea

s2(2

,1))

dB(S

mod

2(2,

1))

10 20 30 40 500 60

-40

-35

-30

-45

-25

freq, GHz

dB(S

mea

s2(1

,2))

dB(S

mod

2(1,

2))

FET2 Modeled vs Measured

10 20 30 40 500 60

0.05

0.10

0.15

0.20

0.00

0.25

freq, GHz

FET2

_s11

dpFE

T2_s

12dp

FET2

_s21

dpFE

T2_s

22dp

10 20 30 40 500 60

0

50

100

150

-50

200

freq, GHz

phas

e(Sm

eas2

(2,1

))ph

ase(

Smod

2(2,

1))


Steve Rockwell

Silicon Technologies for mm-Wave

Z0 vs. R

0.0

20.0

40.0

60.0

80.0

100.0

120.0

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

R=300

R=50

R=10

Silicon Substrate = 15 -cm

Top Metal Signal

Passivation

Dielectric Layers

3 to 10 um

Bottom Metal Ground

CPW MS

Silicon Substrate = 15 -cm

Top Metal Signal

Passivation

Dielectric Layers

3 to 10 um

Bottom Metal Ground

CPW MS

Progression of current distribution with increasing frequency

0.5 GHz 5.5 GHz 10 GHz 40 GHz 70 GHz

M5-Top Conductor

M1-Bottom Conductor


Steve Rockwell

Off Wafer SOLT

On Wafer LRM

On Wafer TRL

Off Wafer SOLT

On Wafer LRM

On Wafer TRL

Measurement Expertise VNA

Developed on-wafer LRM cal for silicon technologies

Load Pull Familiar with load and source pull

characterization up BERT

Digital bit error rate up to 10 Gbps ICCAP

Programming for characterization and modeling On-wafer Calibration De-embedding

Requirements Transmission Line System

Requirements

1. Well defined reference plane to extract accurate loss and phase information of test device.

1. Realizable impedances ranging from at least 25 ohms to 75 ohms, wider if possible.

2. Configured to match end use layout. These layouts should both minimize parasitic effects, and allow them to be accurately characterized.

2. Low loss.

3. Low loss to maximize system dynamic range and increase measurement accuracy.

3. Ease of implementation of scalable, layout based models.

4. Minimize number and size of calibration structures required.

4. Ease of interconnection to active and passive design elements.

5. Minimize post measurement data processing requirements. Single tier, in-situ calibration desired.

5. Minimize real estate cost to implement.

6. Maximize verifiability of calibration accuracy prior to data collection.


Steve Rockwell

EM Simulation

MIM Cap Model (Sonnet)

Marchand Balun (Sonnet)

CPW (HFSS)

Asymmetric Rat Race Coupler

(Sonnet)

Coupled lines in multi-stage MMIC design

(Sonnet)

Progression of current distribution with increasing frequency

0.5 GHz 5.5 GHz 10 GHz 40 GHz 70 GHz

M5-Top Conductor

M1-Bottom Conductor


Steve Rockwell

ADS Simulations & Libraries


Steve Rockwell

Team Leader / Project Leader Project Lead on Packaged MMIC design, assembly, and test

for space qualified flight deliverables Led team of technicians and engineers in assembly and test phase of

effort Responsible for performance reviews

Team leader on various research projects Led team meetings to set and define goals and track progress Represented team’s efforts to business units sponsoring or supporting

the research Responsible for performance reviews of technicians on project


Steve Rockwell

Engineering Management Lead technical researcher on several projects to

demonstrate Gbps wireless radios Defined/negotiated goals, objectives, schedule, and roles

with business units Made presentations and led status meetings with business

units Coordinated research/design efforts among several

engineers and technicians Have been responsible for supervising 3-5 technical

employees at various stages of career.


Steve Rockwell

Experience & Education Experience

Motorola Labs, mm-Wave & microwave design and applied research , 9 years

Motorola Government Business, space payloads, MMIC packaging and test, 4 years

Texas Instrument Defense and Electronics Division, GaAs MMIC, modeling, characterization, and components, 8 years

Academics BSEE from Arizona State University, 1986 Graduate courses at Southern Methodist University and

University of Texas at Dallas, 1988-89


Steve Rockwell

Affiliations & Conferences Professional Society Affiliations

IEEE since 1983 Served as student chapter secretary 1986 Serving as MTTS Representative in Phoenix Waves and Devices chapter from

2002 to 2007. Serving as Vice Chair of Waves and Devices chapter 2007-2008. Chapter Chair, IEEE Waves & Devices (2009 – present) Technical reviewer for technical papers for refereed journals for: “IEEE

Transactions on Microwave Theory and Techniques”; and “IEEE Microwave and Wireless Components Letters”;

Conferences Co-chair of Digest committee for International Microwave Symposium,

Phoenix, AZ, 2001 Session Chair, Non-linear Device Modeling, International Microwave

Symposium, Seattle, WA, 2002. Session Chair, Non-linear Device Modeling, International Microwave

Symposium, Philadelphia, PA 2003. Served on Technical and Vendor committees of CPMT/WAD annual

Devices and Packaging 1 day workshops at ASU from 2001 thru 2008


Steve Rockwell

Publications GaAs MESFETs fabricated on Si substrates using a SrTiO/sub 3/ buffer layer

Eisenbeiser, K.; Emrick, R.; Droopad, R.; Yu, Z.; Finder, J.; Rockwell, S.; Holmes, J.; Overgaard, C.; Ooms, W. IEEE Electron Device Letters , Volume: 23 Issue: 6 , June 2002 Page(s): 300 –302

An 8-Watt 3.5 GHz Power Amplifier with Tunable Matching Rockwell, Emrick, R.; Bosco, B.;Franson, S.; Miller, M.; Johnson, E.;Crowder, J. GaAs IC Symposium, 2002, October 20-23

Performance of GaAs on silicon power amplifier for wireless handset applications Escalera, N.; Emrick, R.; Franson, S.; Farber, B.; Garrison, G.; Holmes, J.; Rockwell, S.; Bosco, B. Microwave Symposium Digest, 2002 IEEE MTT-S International , 2002 Page(s): 1031 -1034 vol.2

RF Devices Implemented on GaAs on Si Substrates Using a SrTiO3 Buffer Layer Eisenbeiser, K.; Emrick, R.; Droopad, R.; Yu, Z.; Finder, J.; Rockwell, S.; Holmes, J.; Overgaard, C.; Ooms, W.;Ramdani, J.;Yu, Z.; Hilt, L.;Talin, A.;Edwards Jr, J.; Curless, J.; O’Steen, M. GaAs IC Symposium, 2001, October 21-24Page(s): 300 –302

MMIC Power Amplifier Output Combiner Network Considerations for S-Band Applications Bosco, B.;Emrick, R.; Franson, S.; Rockwell, S. European Microwave Conference, 2001, September 24-28, London

A 60 GHz Transceiver with Multi-Gigabit Data Rate Capability Bosco, B.;Emrick, R.; Franson, S.; Rockwell, S.; Holmes, JRadio and Wireless Conference, 2004 IEEE

On-Wafer Characterization De-embedding and Transmission Line Optimization on Silicon for Millimeter-wave Applications Bosco, B.; Rockwell, S.Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Characterization and Modeling of Metal/Double-Insulator/Metal Diodes for Millimeter Wave Wireless Receiver ApplicationsStephen Rockwell, Derrick Lim, Bruce A. Bosco, Jeffrey H. Baker, Blake Eliasson, Keith Forsyth, Michael CromarRadio Frequency integrated Circuits (RFIC) Symposium, 2007. Digest of Papers. 2007 IEEE

Gigabit Wireless Personal Area Networks: Motivation, Challenges and ImplementationStephen Rockwell, Bruce A. Bosco, Robert Lempkowski, Rudy Emrick, John Holmes Radio and Wireless Conference 2009

Documents

Rockwell Profile