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Datasheet
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
RND030N20 Nch 200V 3.0A Power MOSFET
Junction temperature Tj 150 °C
Range of storage temperature Tstg 55 to 150 °C
Gate - Source voltage VGSS 30 V
PD 20 W
mJ
A
EAS *3
IAR *3
0.73
1.5
PD 0.85 W
Avalanche energy, single pulse
Avalanche current
Tc = 25°C
Ta = 25°C *4Power dissipation
Pulsed drain current ID,pulse *2 6.0 A
Tc = 25°C
Tc = 100°CContinuous drain current
ID *1 A3.0
ID *1 1.6 A
Drain - Source voltage VDSS 200 V
Automotive Solenoid Drive Taping code TL
Marking N03N20
Absolute maximum ratings(Ta = 25°C)
Parameter Symbol Value Unit
6) 100% Avalanche tested Packaging specifications
Type
Packaging Taping
Application Reel size (mm) 330
Switching Power Supply Tape width (mm) 16
Automotive Motor Drive Basic ordering unit (pcs) 2,500
Features Inner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
Outline
VDSS 200VCPT3(SC-63)<SOT-428>
RDS(on) (Max.) 870mID 3.0A
PD 20W
1 ESD PROTECTION DIODE2 BODY DIODE
(1) Gate(2) Drain(3) Source (1)
(3)
(2)
*1
*2
(1)
(2)
(3)
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Data SheetRND030N20
Thermal resistance, junction - case
mVGS = 10V, ID = 1.5A
Tj = 125°C
Forward transfer admittance VDS = 10V, ID = 1.5A 0.75 1.50 - S
Static drain - sourceon - state resistance
VGS = 10V, ID = 1.5A - 620 870
- 1150
10 nA
Tj = 125°C
VGate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.2 - 5.2
Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - -
A
Min. Typ. Max.
°C
V200 - -
- - 265
- 6.25 °C/W
- - °C/W147
-
ValuesUnit
Min. Typ. Max.
gfs
VDS = 200V, VGS = 0V
Tj = 25°C
VDS = 200V, VGS = 0V
Thermal resistance
Parameter Symbol
Symbol Conditions
VGS = 0V, ID = 1mA
Tsold
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
RthJA
RthJC
1610RDS(on)
*5
Electrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown voltage
Zero gate voltage drain current
V(BR)DSS
IDSS
-
-
- 10
- 100
ValuesUnit
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Data SheetRND030N20
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (20mm × 30mm × 0.8mm)
*5 Pulsed
-
- V
ID = 3.0A
VGS = 10V
- 2.7 -
Gate - Drain charge Qgd *5 - 2.4 -
nCGate - Source charge Qgs *5
Total gate charge Qg *5 VDD ⋍ 100V -
-
Gate Charge characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
Turn - on delay time td(on) *5 VDD ⋍ 100V, VGS = 10V - 13 -
nsRise time tr
*5 ID = 1.5A - 13 -
Turn - off delay time td(off) *5 RL = 12 - 18 -
Fall time tf *5 RG = 10 - 17
pFOutput capacitance Coss VDS = 25V - 30 -
Reverse transfer capacitance Crss f = 1MHz
Input capacitance Ciss VGS = 0V - 270 -
- 10 -
Electrical characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
nC
6.0 A
Forward voltage VSD *5 VGS = 0V, IS = 3.0A - - 1.5 V
55 - ns
Tc = 25°C
Reverse recovery time trr *5
IS *1 - - 3.0 A
Pulsed source current ISM *2 -
-
Continuous source current
6.7 -
IS = 1.5A
di/dt = 100A/sReverse recovery charge Qrr *5 - 11 -
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
Gate plateau voltage V(plateau) VDD ⋍ 100V, ID = 3A - 7.2
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Data SheetRND030N20
Electrical characteristic curves
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
0.01
0.1
1
10
0.0001 0.01 1 100
Ta=25ºCSingle PulseRth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 147ºC/W
top D = 1D = 0.5D = 0.1D = 0.05D = 0.01D = Single
0.01
0.1
1
10
100
0.1 1 10 100 1000
Ta=25ºCSingle Pulse
PW = 100s
PW = 1ms
PW = 10ms
Operation in thisarea is limitedby RDS(on)
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Pow
er D
issi
patio
n :
PD/P
Dm
ax. [
%]
Dra
in C
urre
nt :
ID
[A]
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Nor
mal
ized
Tra
nsie
nt T
herm
al R
esis
tanc
e : r
(t)
Pulse Width : PW [s]
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
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Data SheetRND030N20
Electrical characteristic curves
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.2 0.4 0.6 0.8 1
VGS=6.0V
Ta=25ºCPulsed
VGS=8.0V
VGS=10.0V
VGS=7.0V
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10
VGS=6.0V
VGS=10.0V
VGS=8.0V
VGS=7.0V
Ta=25ºCPulsed
0.1
1
10
0.01 0.1 1 10 100
VDD=50V,RG=25VGF=10V,VGR=0VStarting Tch=25ºC
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.6 Typical Output Characteristics(I)
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Fig.7 Typical Output Characteristics(II)
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Fig.4 Avalanche Current vs Inductive Load
Ava
lanc
he C
urre
nt :
IA
S[A
]
Coil Inductance : L [mH]
Fig.5 Avalanche Energy Derating Curvevs Junction Temperature
Ava
lanc
he E
nerg
y :
EA
S/ E
AS
max
. [%
]
Junction Temperature : Tj [°C]
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Data SheetRND030N20
Electrical characteristic curves
180
190
200
210
220
230
240
250
260
270
280
-50 0 50 100 150
VGS = 0VID = 1mA
0.001
0.01
0.1
1
10
0 1 2 3 4 5 6 7 8 9 10
VDS= 10V
Ta= 125ºCTa= 75ºCTa= 25ºCTa= 25ºC
2.5
3.0
3.5
4.0
4.5
5.0
-50 -25 0 25 50 75 100 125 150
VDS = 10VID = 1mA
0.01
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Ta= 25ºCTa=25ºCTa=75ºCTa=125ºC
Fig.10 Gate Threshold Voltagevs. Junction Temperature
Gat
e T
hres
hold
Vol
tage
: V
GS
(th)
[V]
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
Tra
nsco
nduc
tanc
e : g
fs[S
]
Drain Current : ID [A]
Fig.8 Breakdown Voltage vs. Junction Temperature
Junction Temperature : Tj [°C]
Fig.9 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Dra
in C
urre
nt :
ID
[A]
Nor
mar
ize
Dra
in -
Sou
rce
Bre
akdo
wn
Vol
tage
: V(B
R)D
SS
[V]
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Data SheetRND030N20
Electrical characteristic curves
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 2 4 6 8 10 12 14 16 18 20
ID = 1.5A
ID = 3A
Ta=25ºC
100
1000
10000
0.01 0.1 1 10
Ta=25ºC
VGS= 10V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
-50 0 50 100 150
VGS = 10VID = 1.5A
Fig.13 Static Drain - Source On - StateResistance vs. Drain Current(I)
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[m
]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - StateResistance vs. Junction Temperature
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[m
]
Drain Current : ID [A]
Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[m
]
Gate - Source Voltage : VGS [V]
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Data SheetRND030N20
Electrical characteristic curves
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175100
1000
10000
0.01 0.1 1 10
Ta=125ºCTa=75ºCTa=25ºCTa= 25ºC
VGS= 10V
Fig.15 Static Drain - Source On - StateResistance vs. Drain Current(II)
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[m
]
Drain Current : ID [A]
Fig.16 Drain Current Derating Curve
Dra
in C
urre
nt D
issi
patio
n : I
D/I D
max
.(%
)
Junction Temperature : Tj [°C]
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Data SheetRND030N20
Electrical characteristic curves
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta = 25ºCf = 1MHzVGS = 0V
1
10
100
1000
10000
0.01 0.1 1 10
tr
tf
td(on)
td(off)
Ta=25ºCVDD= 100VVGS= 10VRG=10
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15
Ta=25ºCVDD= 100VID= 3ARG=10
Fig.17 Typical Capacitancevs. Drain - Source Voltage
Cap
acita
nce
: C
[pF
]
Drain - Source Voltage : VDS [V]
Fig.19 Dynamic Input Characteristics
Gat
e -
Sou
rce
Vol
tage
: V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.18 Switching Characteristics
Sw
itchi
ng T
ime
: t [
ns]
Drain Current : ID [A]
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Data SheetRND030N20
Electrical characteristic curves
10
100
1000
0.1 1 10
Ta=25ºCdi / dt = 100A / sVGS = 0V
0.01
0.1
1
10
0.0 0.5 1.0 1.5
Ta=125ºCTa=75ºCTa=25ºC
Ta= 25ºC
VGS=0V
Fig.20 Source Currentvs. Source - Drain Voltage
Sou
rce
Cur
rent
: I S
[A]
Source-Drain Voltage : VSD [V]
Fig21 Reverse Recovery Timevs.Source Current
Rev
erse
Rec
over
y T
ime
: tr
r [n
s]
Source Current : IS [A]
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Data SheetRND030N20
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
90%
90% 90%
10% 10%
50%10%50%
VGS
Pulse width
VDS
ton toff
trtd(on) tftd(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
VG
VGS
Charge
Qg
Qgs Qgd
VGS
RG
VDS
D.U.T.
IAS
L
VDD
IAS
VDD
V(BR)DSS
IAS2LEAS =
V(BR)DSS - VDD
V(BR)DSS12
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Data SheetRND030N20
Dimensions (Unit : mm)
Dimension in mm/inches
CPT3
D
b1
e b
b3
b2
L3
A2
H A1
A3
c
L1 Lp
x B AL
EL2
l3
l2 l1
b6
b5
e
L4
c1
BA
MIN MAX MIN MAXA1 0.00 0.15 0 0.006A2 2.20 2.50 0.087 0.098A3b 0.55 0.75 0.022 0.03b1 5.00 5.30 0.197 0.209b2b3c 0.40 0.60 0.016 0.024c1 0.40 0.60 0.016 0.024D 6.30 6.70 0.248 0.264E 5.40 5.80 0.213 0.228eHE 9.00 10.00 0.354 0.394L 2.20 2.80 0.087 0.11L1 0.80 1.40 0.031 0.055L2 1.20 1.80 0.047 0.071L3L4Lp 1.00 1.60 0.039 0.063x - 0.25 - 0.01
MIN MAX MIN MAXb5 - 1.00 - 0.04b6 - 5.20 - 0.205l1 - 2.50 - 0.098l2 - 5.50 - 0.217l3 - 10.00 - 0.394
0.90 0.035
0.25 0.01
2.30 0.09
5.30 0.209
DIMMILIMETERS INCHES
DIMMILIMETERS INCHES
5.00 0.200.75 0.03
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Notice
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N o t e s
The information contained herein is subject to change without notice.
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