RFSOI Foundry Technology Supporting Rapid New Product Development

Paul Hurwitz

RFSOI Industry Consortium September 17, 2019 Shanghai

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TowerJazz Overview

TowerJazz manufactures integrated circuits, offering a customizable

process technologies:

• RFSOI and RFCMOS

• SiGe BiCMOS

• Silicon Photonics

• CMOS Image Sensor

• Integrated Power management (BCD and 700V)

• MEMS

• Mixed-signal/CMOS

Additional offering:

• World class design enablement (DE) platform

• Transfer Optimization and development Process Services (**TOPS)

** To IDMs and Fabless companies that need to expand

capacity

TowerJazz Manufacturing Facilities: Two in Israel (150mm & 200mm)

Two in the US (200mm)

Three in Japan (two 200mm and one 300mm) through

TowerJazz Panasonic Semiconductor Co (TPSCo).

We specialize in customized analog

solutions for differentiated products

Rooted in proven technologies

Derived from innovation within silicon

We pursue excellence in all aspects of

business

1st-3rd Generation 200mm RF-SOI

Latest 300mm RF-SOI

Latest 200mm RF-SOI

Flexible Worldwide RF-SOI Manufacturing

• 6″, 150mm

Migdal HaEmek, Israel Migdal HaEmek, Israel

• 8″, 200mm • 8″, 200mm

Newport Beach, USA

• 8" (200mm)

San Antonio, USA

Tonami, Japan

• 8″, 200mm

Arai, Japan

• 8″, 200mm

Uozu, Japan

• 12″, 300mm

TowerJazz RF-SOI for 4G/LTE + Sub-6GHz 5G NR

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Feature Enables FEM

Performance

Low Ron × Coff Insertion Loss, Isolation →

Battery Life

High Power

Handling,

High Digital

Density

FEM board size reduction

→ Enables more bands +

antennas

Linearity Carrier Aggregation →

Higher Data Rate

Low Noise System NF → Longer

Range

Advanced

Passives

Integrated matching →

Small form factor

Antenna tuning → Battery

Life

Design

Enablement

1st pass success → Fast

time to market

Carrier Aggregation, 4 X 4 MIMO and new 5G bands drive the need

for low-loss, high power, high linearity switching enabled by RF-SOI.

New in 2019: Next-Gen 200mm and 300mm RF-SOI

200mm RF-SOI: Best power handling (tuners, infrastructure…)

300mm RF-SOI: Best SW+LNA integration, higher digital density.

AC Breakdown Voltage

Ro

n X

Co

ff

200mm RF-SOI

Gen4

Gen4+

0.5V

AC Breakdown Voltage

Ro

n X

Co

ff

Gen1

Lg1

Lg2 Lg3

Gen2

Gen2 OD

300mm RF-SOI

15fS

RF Switch Die Size Reduction

A

n

t

e

n

n

a

interface logic

SW branch

SW branch

SW branch

SW branch

SW branch

SW branch

SW branch

SW branch

charge pump, analog

A

n

t

e

n

n

a

SW branch

interface

logic charge pump, analog

SW branch

SW branch

SW branch

SW branch

SW branch

SW branch

SW branch

1ST GENERATION SOI RFSW 4TH GENERATION SOI RFSW

• RFSW die size reduction enabled

by Ron X Coff reduction, Pmax

and digital density increase.

Antenna Tuning and Switch Power Handling

Even small parasitic losses across switch branch results in significant voltage imbalance: Devices near the antenna can easily see > 2V higher peak Vds than others.

Simulated with TowerJazz PDK

Improved Pmax Modeling

New SOI model adopted for latest technology generation.

Physics-based modeling of RF breakdown for accuracy across Lf, Wf, Rb, Nstack, etc.

Lg1

Lg2

Lg3

• Easy to use - No need to draw any special marking layers • Multiple coupling paths are self-consistently modeled

A. Lateral coupling between metal layers B. Coupling via handle-wafer C. Coupling to reference GND via Package dielectric

(TJ proprietary technique) D. Coupling to package GND - Option to add Bump/Cu pillar,

PCB Via, and PCB GND plane.

Customization Form

Silicon Validated

New Flip-Chip Substrate Modeling Capability

* Ron-Coff including metal parasitics

Deep sub-µm CMOS integration, dual thick Cu, and excellent RFSW make 300mm gen2 a great platform for DRx / DTx, WLAN, and K, Ka-band applications.

Parameter Trad. 130nm

NFET

Gen2 LNA

NFET

Ft 1X 1.75X

NFmin @5mA X dB X-0.06 dB

Gm 1X 1.4X

LNA + Switch Integration in 300mm RF-SOI

Gen1 Gen2

CMOS 1.2 / 2.5V 1.2 / 2.5V

Ron-Coff (fs)* 1X 0.9X

Resistor

(ohm/sq) LV, HV LV, HV

MIM Cap Yes Yes

Top Metal Single or

dual thick Cu

Single or dual

thick Cu

FB effects 1X 0.5X

Wafer Size 300mm 300mm

PDK Available Yes Yes

LNA Device Modeling, Gain and Noise Circles

Includes pad parasitics Excellent noise model fits to and extensive measured dataset

LNA + RFSW Integration Demonstrators

• Close Si-model match in 1st pass designs

• TPS65 enables high-performance DRx LNA integrated with leading-edge RFSW: • > 20 dB gain • < 0.9 dB NF • < 6 mW PDC

0

1

2

3

4

5

27.4 27.6 27.8 28 28.2 28.4 28.6

NF

[dB

]

freq (GHz)

Meas

Sim

5 GHz

28 GHz

In-House Multi-Project Wafer Support + eBizz

Flexible in-house MPW program (shared or customer-specific) that enables rapid prototyping of even the most complex tape-ins.

MLM capability in 300mm RFSOI.

Powerful + easy-to-use eBizz system for tape-in, documentation access, help ticket system, knowledge base, Cpk trends, etc.

Experienced local support from China sales office

Access to lead technologists to align our roadmap with customers’ long-term objectives.

Requirements for Rapid TTM in RFSOI

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Challenge TowerJazz Solution

Realize market leading performance Gen4 RFSOI technologies optimized for high power

SW and SW+LNA integration

Minimize # of design spins Accurate RF models (S/N/F, x-sigma) able to predict

key SW FOM, fast PeX and substrate extraction.

Leverage TJ design demonstrators.

Streamline tape-in and OKTMM process Flexible in-house MPW system managed by

experienced staff.

Minimize time in fab Streamlined flows with good engineering cycle times.

Maximize IP reuse Preserve key logic + analog specs across multiple

RFSW generations.

Quickly close technology-related questions eBizz portal and worldwide design support staff.

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