RF-MEMS: An enabling technology for reconfigurable radio ... reddot/chairemems/documents... · RF-MEMS: An enabling technology for Reconfigurable Radio Front-ends H. Tilmans (IMEC)

RF-MEMS: An enabling technology for Reconfigurable Radio Front-ends

H. Tilmans (IMEC)

NanoWal day (UCL, Louvain-la-Neuve) 18.03.2008 1

Harrie [email protected]

--

NanoWal-Microsystems Chair event

UCL, Louvain-la-Neuve, 18 March 2008

RF-MEMS: An enabling

technology for reconfigurable

radio front-ends

H. Tilmans imec/restricted 2008 2

NanoWal-Microsystems-day UCL, Louvain-la-Neuve (Belgium) 18.03.2008

Overview

• Mobile phones à handsets– Intro/Ubiquituous world/Convergence

– Multiband/Multistandard/Multimedia

– Challenges for the future/Key drivers for mobile handsets

• Technology trends addressing the handset problem

• RF-MEMS as an enabling technology– How can RF-MEMS help?

– Example of MEMS devices for wireless applications

– Example of reconfigurable MEMS based functionality (switchable bandpass filter)

– Passive integration of RF-MEMS

• Conclusions


H. Tilmans (IMEC)




Cellular radios:

Not just phones anymore!



Wireless Ubiquity: a world where we can access what we

want, when we want and where we want..

Source: K. Muhammadand, Front-Ends for Commercial Digitally Controlled Radios”, workshop IMS2007

Multi-MEDIA

Multi-BAND

Multi-STANDARD


H. Tilmans (IMEC)




A crowded frequency spectrum

Source: M. Brandolini (Broadcom) and F. Svelto, “Reconfigurable Reconfigurable SiSiRF Receiver FrontRFReceiver Front--Ends Ends for Multifor Multi--Standard RadiosStandard Radios”, Workshop IMS2007.

• Cellular (GSM-GPRS, UMTS/WCDMA, …)• Connectivity (Bluetooth, Wi-Fi, WLAN, WiMAX)

• Broadcast (FM, DVB,..)• Positioning (GPS)

UWBbroadcast



Roadmap for RF section in cellular “phones”

Source: EPCOS, “RF-Frontendof Mobile Phones”, workshop IMS06

High level of integration is a must!

Baseband

Baseband

Ba

tte

ry l

ife

2011

Baseband

Baseband

RF

BB

TunabilityReconfigurableFront-end, SDR

SoC,Adv. Packaging Modular, SiP


H. Tilmans (IMEC)




Trends/Emerging disruptive technologies with

the potential to simplify the RF front-end:

• IC trend:– Miniaturization “More Moore”: 90à 65à 45à 32nm (à SoC approach)

– New technologies “Beyond CMOS” (e.g., tri-gate, Carbon Nanotube FET)

• Packaging trend (SiP is the future):– Advanced packaging technologies:

• Smaller pich (wirebond and flip-chip)

• Thickness direction integration– Stacked die (PiP, PoP, ..), 3D packaging

– Embedded actives (thinned die) in substrate

– Embedded passives in substrate à Integrated Passive Devices (use of semiconductor processing in stead of surface mount devices)

• RF-MEMS technology: a “More than Moore” technology for building RF passives (switches, varicaps, resonators, filters, …) using semiconductor like technologies



So many discrete passives….

àààà Integrated Passive Device (IPD)

Discrete Passives(C’s, L’s, R’s, filters, ..):

• ∼80% of all components (∼ 5% are actives)

• ∼ 70% board space• ∼ 60% cost

Spiral Inductor L

BCB

CuNi/AuCu

Al

Source: Imec

High Res subTa2O5 capacitor CTaN resistor R

Trend:Reduction of the number of discrete passives

passive integration IPD

P F-E Module

IPD inc.

P F-E ModuleIPD inc.

Passive Front-End ModuleIPD inc.

Passive Front-End ModuleIPD inc.

Spiral Cu inductor

L = 0.6 - 80 nH; Q = 30 - 150

CPW Lange coupler

Ta2O5 capacitor

5.5 pF/ mm2

0.72 nF/mm2

Gain30%boardspace


H. Tilmans (IMEC)




Example of Integration of passives:

Philips GSM PA module àààà Tx Front-End Module

Single-band GSM PA module Quad-band Tx module

Philips, BGY241 Philips, BGY5041998 2004

IPDsPASSI

Trend towards fully integrated RF radio

module

Philips

- 2 actives- 30 SMDpassives

GSM PA+ matching+ ASW (pin diode switches)+ diplexer+ LPFs



Multiradio: How to fit all these radio’s in the same size (or smaller) handset?

Radio 1Radio 2

Radio 3 Radio 4NOKIA

Future: 2G/3G/3.9G (up to 17 bands) together withUWB, WLAN, RFID, Bluetooth, FM Radio, DVB-H, GPS, …

Baseband


H. Tilmans (IMEC)




Multi-band/Multi-mode radio architecture:

Today: Duplication of part of the front-end

GSM1800 Rx

UMTS2.2

GSM900 Rx

800-900MHz

1700-2200MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx

Multi-band antenna + Antenna switch matrix

Headphone+FM antenna

WLAN5.2 Rx

GPS Rx

LNA1

T

R

LNA4

T/R

Mode/Band switch

T

R

LNA5

PCS1900

PA1

PA2

PA3

PA5

PA4

LNA2

LNA3

GSM1800 Tx

GSM900 Tx

WLAN5.2 Tx

Direct convers

ion

BASEBAND

FDD

TDD



The Future: The flexible radio (Multi-band/Multi-mode):

Introduce reconfigurability

UMTS2.2

GSM900 Rx

800-900MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



GPS Rx

T

R

LNA2

T/R

Band/TDD/FDD

T

R

LNA3

PCS1900

PA1

PA3

PA2

LNA1

DCS1800 Tx

GSM900 Tx

WLAN5.2 Tx

DCS1800 Rx

WLAN5.2 Rx

Direct convers

ion B

ASEBAND

FDD

TDD

PA match

1700-2200MHz

Adaptive Antenna Match

detector

control

Tunable network

Coupler


H. Tilmans (IMEC)




RF-MEMS: An enabling technology for

reconfigurable radio front-ends

• Large variety of functions (switch, varicap, variometer, filter, resonator, …)à replace existing components with cheaper or better MEMS components

• Low loss (high-Q) components

• High linearity

• Reconfigurability is a natural asset for someØ Tunable/adaptive (matching) networks

Ø Multi-mode/Multi-band switching

• “Integratability”:– With IPD

– Above/Below RF-CMOS

Tunable RF blocks based on RF-MEMS

RF-MEMS switch

Tunable/Reconfigurable radio front-ends are needed to satisfy the constraints on size, battery life, functionality and cost;

RF-MEMS is a key technology enabler:



Multi-band/Multi-mode radio architecture:

Where can RF-MEMS be used?

GSM1800 Rx

UMTS2.2

GSM900 Rx

800-900MHz

1700-2200MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



WLAN5.2 Rx

GPS Rx

LNA1

T

R

LNA4

T/R

Mode/Band switch

T

R

LNA5

PCS1900

PA1

PA2

PA3

PA5

PA4

LNA2

LNA3

GSM1800 Tx

GSM900 Tx

WLAN5.2 Txswitchplexer

RF filters

Diplexers

Direct convers

ion

BASEBAND


H. Tilmans (IMEC)




Reconfigurable Radio Front-End

Where can RF-MEMS be used?

UMTS2.2

GSM900 Rx

800-900MHz

1700-2200MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



GPS Rx

T

R

LNA2

T/R

Band/TDD/FDD

T

R

LNA3

PCS1900

PA1

PA3

PA2

LNA1

GSM1800 Tx

GSM900 Tx

GSM1800 Rx

WLAN5.2 Rx

switchplexer

Diplexers

Tunable Matching networks

Direct convers

ion

BASEBAND

Tunable/switchable RF filters/switched filter bank

WLAN5.2 Tx



RF-MEMSfor

Reconfigurable Radio Front-ends


H. Tilmans (IMEC)




RF-MEMS functionalities

• Components:– Switch

– Tunable capacitor

– Tunable inductor

– MEM resonator

– BAW resonator (FBAR)

• Circuits:– FBAR filter

– Switchable filter

– Tunable matching network

• Subsystems– Tunable antenna

– Switched filter bank

– …..

OhmicMEMS relays

FBARfilters

Switched Filter Bank

FBAR filter (Infineon)

MEM resonator

NXP

RF

5/02

RadantMEMS

IMEC



BAW thin film resonators/filters

FBAR filter (Infineon)


H. Tilmans (IMEC)




The radio front-end;

where can BAW filters be used? àààà diplexer

UMTS2.2

GSM900 Rx

800-900MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



GPS Rx

T

R

LNA2

T/R

Band/TDD/FDD

T

R

LNA3

PCS1900

PA1

PA3

PA2

LNA1

DCS1800 Tx

GSM900 Tx

WLAN5.2 Tx

DCS1800 Rx

WLAN5.2 Rx

Direct convers

ion B

ASEBAND

FDD

TDD

PA match

1700-2200MHz


detector

control

Tunable network

Coupler

Diplexers



Ladder-type FBAR filter FBAR filter,

Infineon (2003)

Measured filter response

IL<3.5dBChip size: 0.6x0.9mm2

3.5 stage ladder filter (DCS/PCN1800 Rx (1805-1880MHz)

Infineon

Film Bulk Acoustic Resonator (FBAR) (1)

principle of operation/filter structure

• Resonator

• Filter

|Z|

ωωm inωmax

V

electrode

piezoelectric layer

~2

vf

d

d

AlN: v≈≈≈≈11,000 m/s

2.5µµµµm ŁŁŁŁ 2.2GHz

Q≈1000

resonance

anti-resonance


H. Tilmans (IMEC)




FBAR filter

Example AVAGO Quintplexer (5 FBAR filters)

(800MHz)

(1900MHz)

(1900MHz)

(1900MHz)

(1575MHz)

Features:• Single antenna connection for PCS duplexer, Cellular duplexer, and GPS filter• Eliminates antenna switching• Miniature size

o 5 x 8 mm Footprinto 1.3 mm Max Height

• High Power Ratingo +33 dBm Max Tx Power

• Lead-Free Construction

<5mm

<8mm

PCSRx

PCSTx

GPSGPS

CellRx

CellTx

Chip capacitors

ACFM-7101

2007



Tunable FBAR

CsFBAR

Cs

Rm

Lm

Cm

C0

Re

R0

V

I

mmCL

10 =ω

6.29

6.28

6.27

6.26

6.25

6.24

series

reso

na

nt frequency

f s

(G

Hz)

2015105

actuation voltage (V)

pull-in

∆f=24.5 MHz(0.39% tuning)

fitted curve

signal line

substrate

bottom electrode

Cs air gap

AlNlayer

top electrode

signal line

W. Pan, P. Soussan, B. Nauwelaers and H.A.C. Tilmans, Sensors and Actuators A, vol. 126, 2006, pp. 436-446


H. Tilmans (IMEC)




FBAR(2): FBAR filter above BiCMOS for use in

WCDMA zero-IF Front-end J. F. Carpentier, et al. (STMicroel., CEA-LETI, CSEM), “A SiGe:C BiCMOS WCDMA Zero-IF RF Front-End Using an Above-IC BAW Filter” ISSCC2005, pp.394-395

AlN

loading

0.25 µm SiGe BiCMOS wafer

SiO2

FBAR integrated above CMOS

Insertion loss-3.5dB

Out-of-band

rejection: ≈50dB



Mechanical ResonatorSi-MEM resonator

VTT


H. Tilmans (IMEC)




size: 10 mm x 10 mm x 2 mm

Quartz crystal oscillator (13 MHz)

•advantages: well understood, low cost (<0.5 EUR),

temperature stable to 1 ppm, long term stable to 0.1 ppm/year

•disadvantage: significant space consumer on circuit board!

Reference resonator (used for LO)



Reference clock/Timing devices:

Quartz crystals àààà Si MEM resonators

Quartz crystals -- Remarkable properties:• high spectral purity (low phase noise),• exceptional frequency stability against temperature variations and aging (for wide temperature range (-45°C to +100°C) stability ∆f/f of XO: 10-50ppm, of TCXO: 1ppm (aging 0.1-1ppm/year) and of OCXO: 0.01ppm)

but also drawbacks:• Relatively large size• Not “integratable” (with CMOS)• Cost

New kid on the block: Si MEM resonator

MEMSMEMS

CMOSCMOS

Kajakaari (VTT, 2004)

Square Extensional Mode resonator

-2 kHz -1 kHz f0 +1 kHz +2 kHz-20

-15

-10

-5

0

5

10

15

20

Frequency

|S2

1|[

dB

m]

|S2

1| (d

B)

Frequency

f0 = 13.1 MHz

Q = 130 000

Size: 320 µm

Noise floor:-150dBc/Hz

Better than:-130dBc/Hz@∆∆∆∆f=1kHz

(=GSM spec)


H. Tilmans (IMEC)




SiTime

MEMS first resonator (below-CMOS)

• 300µm on the side

• 8” SOI wafers in a 0.18micron CMOS fabrication line (10cents/mm2)• Encapsulated on-chip à low cost plastic injection molded package• Performance similar to quartz (Q=75,000; frequency error 75ppm)

MEMS First resonator stacked on a CMOS driver IC in a QFN-type package (~3x5x0.85mm3)



RF-MEMS switches

• Capacitive

• Ohmic

RF-in

RF-out

Armature(bridge)

dielectric

GND

GND

substrate

signal line

RF-MEMS switching devicesTunable capacitors

IMEC


H. Tilmans (IMEC)




The radio front-end: Where can switches/switched caps be

used? àààà band switches, T/R switches, matching networks, ….

UMTS2.2

GSM900 Rx

800-900MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



GPS Rx

T

R

LNA2

T/R

Band/TDD/FDD

T

R

LNA3

PCS1900

PA1

PA3

PA2

LNA1

DCS1800 Tx

GSM900 Tx

WLAN5.2 Tx

DCS1800 Rx

WLAN5.2 Rx

Direct convers

ion B

ASEBAND

FDD

TDD

PA match

1700-2200MHz


detector

control

Tunable network

Coupler

switchplexer



A key element for reconfigurable radio front-

ends: (RF-MEMS) Switching device

DC+RF

GND

GND

dielectric

metal bridgeRF

5/02

ON

Variable capacitor

Capacitive switch

OFF

LsCfres

π2

1=


H. Tilmans (IMEC)




Switching Devices:

Example 6-7GHz shunt capacitive switch

CLf

s

resπ2

1=

Cu 2µm/

Ni 3 µm /

Au 300nm

Probe pad

probe

TaN (0.2µm)

Metal armature (Al-alloy 1µµµµm))

Ta2O5 (0.3µm)

Al (0.3µm)AF45 (700 µµµµm)

Interconnect (Al-1µm)

Air gap

Cu/Au frame

Substrate

RF-in

RF-out

RF-out

RF-in



Imec’s RF-MEMS Technology Platform today:

First step towards an RF-MEMS IPD

Ta2O5 capacitor

0.72 nF/mm2

Spiral Al inductor

L=0.6-80nH

Q=5-40

TaN resistors

25-100 ΩΩΩΩ/oooo

0.7-37 kΩΩΩΩ

Cu 2µm/

Ni 3 µm /

Au 300nm

Probe pad

probe

TaN (0.2µm)

Metal armature (Al-alloy 1µµµµm))

Ta2O5 (0.3µm)

Al (0.3µm)AF45 (700 µµµµm)

Interconnect (Al-1µm)

Air gap

Wafer-level packaging

Tunable capacitor

Boosted Capacitive switches/switched capacitors (0.5-50GHz)

shunt

series

Capacitive switches/ switched capacitors (5-50GHz)

Longitudinal shunt

Transversal shunt


H. Tilmans (IMEC)




RF-MEMS circuitry

Switchable (LC-type)Band Pass Filter



The radio front-end: Where can switchable filters

be used? àààà band select filters

UMTS2.2

GSM900 Rx

800-900MHz

5200MHz

VHF

2400MHz

Mobile TV& Radio Rx



GPS Rx

T

R

LNA2

T/R

Band/TDD/FDD

T

R

LNA3

PCS1900

PA1

PA3

PA2

LNA1

DCS1800 Tx

GSM900 Tx

WLAN5.2 Tx

DCS1800 Rx

WLAN5.2 Rx

Direct convers

ion B

ASEBAND

FDD

TDD

PA match

1700-2200MHz


detector

control

Tunable network

Coupler

Tunable/switchable RF filters/switched filter bank


H. Tilmans (IMEC)




Example of an IPD:LC-type BPF (GPS and Galileo)

0.6mm

Galileo

GPS5.34nH 5.34nH

6.45pF

2.58pF

53.7pF

38.9pF

2pF 5.6pF

Ci

n

Ci

n

C

S

C

S

C

C

LR LRCR CR

CCCCININININ CCCCSSSS LLLLRRRR

GNDGNDGNDGND----GNDGNDGNDGNDBridgeBridgeBridgeBridge

PadPadPadPad

CCCCRRRR CCCCCCCC CCCCRRRR LLLLRRRR CCCCININININCCCCSSSS

GNDGNDGNDGND----GNDGNDGNDGNDBridgeBridgeBridgeBridge PadPadPadPad

Source: X. Rottenberg et al., proc. EuMC2006, Manchester (UK), Sept. 2006



2nd order LC-type BPFs as IPD:for GPS and Galileo

90.5 (94.3)

1587 (1576)

7.3 (5.1)GPS (1575MHz)

109 (105)1130 (1203)

6.0 (4.3)Galileo (1202MHz)

BW (MHz)CF (MHz)IL (dB)

GPS

Galileo

MCM-D IPD:

Ø Two separate filters for both bands

àààà increased size

Need for on-chip switchable capacitor(for CR and CC)

RF-MEMS

(…) simulation

GPS

Galileo

S2

1[d

B]

Freq. [GHz]

3-switch CinCin

CS CSCC

LR LRCR CR



H. Tilmans (IMEC)




Switchable filter in RF-MEMS:between GPS and Galileo bands

CinCin

CS CSCC

LR LRCR CR


GPS

Galileo

3-switch

5.97.3GPS (1575MHz)

4.86.0Galileo (1202MHz)

IL [dB]

RF-MEMS

IL [dB]

MCM-D

Comparison IPD/RF-MEMS

• (+) Reduced size (by factor 2)

• (+) Lower loss

• (-) fo (Galileo) is off



Lr

Cr-Cm

n:1CmZo

Cr-Cm

1:n

Zo

Lr

Vg

PARAMETER DCS 1800

Lr (nH)

Cr (pF)

Cm (pF)

2.6

n

2.6

2.85 0.28

0.2 0.045

5 1.85

WLAN

CNRS-IRCOM (co-simulation at TUM)[email protected] at MEMSWAVE2006

Tunable/Switchable BPF

2-COUPLED RESONATOR switchable FILTER by XLIM (1)

B. Switchable filter,using coupled

lumped resonators

Switched capacitorsImpedance transformer

1 2 3 4 5 6 7 8 90 10

-40

-20

-60

0

Frequency (GHz)

S p

ara

mete

rs(d

B) Std. 2:

WLAN5.2GHz

Std. 1:DCS1800

ADS simulation


H. Tilmans (IMEC)




CNRS-IRCOM (co-simulation at TUM)[email protected] at MEMSWAVE2006

Tunable/Switchable BPF

2-COUPLED RESONATOR switchable FILTER by IRCOM (2)

2 cm

MEMS switchable capacitor

MEMS DC contact switch

Switchable inter resonator

coupling capacitanceSwitchable Filter core layout

SMD inductor

1360 m

760 m

Surface Mounted high Q

inductor

Input matching section

Output matching section

Filter core

SM inductorsQ=156 @ 1.7GHz

Prototype fabricated by XLIM (on quartz substrate: 525 m, ε r=3.78,

tanδ =0.0001) and measured

Fixed value MAMcapacitor

L=2.6 nH

Measured characteristics

1 2 3 4 5 6 7 80 9

-60

-50

-40

-30

-20

-10

-70

0

-25

-20

-15

-10

-5

0

5

-30

10

Frequency (GHz)

S2

1 (

dB

) S1

1 (d

B)

Surface Mounted high Q

inductorInput matching

section

Output matching section

Filter core



RF-MEMS on the evolutionary path of passive integration


H. Tilmans (IMEC)




Technology platform for RF passives:

Stepwise introduction of flexibility/Evolutionary paths

Ø Integration of fixed RF passives à Integrated Passive Device MCM

Spiral Cu inductor

L = 0.6 - 80 nH; Q = 30 - 150

CPW Lange coupler

Ta2O5 capacitor

5.5 pF/ mm2

0.72 nF/mm2

Spiral Inductor L

BCB

Cu

Ni/Au

Cu

Al

Source: Imec

High Res substrate

Ta2O5 capacitor CTaN resistor R

MCM




Introduction of flexibility/Evolutionary paths


Ø Preferably serve as a carrier substrate for mounting actives (and other discrete passives) à RF-SiP (or RF MCM-D)

Spiral Inductor

BCB

Mounted component, e.g. RFIC

Cu

Ni/Au

Cusolder

Al

Source: Imec

High Res substrate

Ta2O5 capacitorTaN resistor

e.g. SAW


H. Tilmans (IMEC)




Example of RF-SiP reconfigurable

front-end

Tunable BPF (XLIM)

LNA (ULM/ATMEL)

Tunable Matching Network (METU)

Antenna (IMEC, KU Leuven)

Diplexer(Avago)DPST (FBK)

SPDT (METU)SPDT (METU)

Rogers 4350

Prepreg 7628

FR4

Prepreg 7628

Cu layer

RF-ground

DC lines

Microstrip lines #1

#2

#3

#4

Rogers 4350

Prepreg 7628

FR4

Prepreg 7628

Cu layer

RF-ground

DC lines

Microstrip lines #1

#2

#3

#4






Ø Preferably serve as a carrier substrate for mounting actives (and other discrete passives) à RF-SiP

Ø Next evolutionary path: include RF-MEMS (flexible) passives:

§ Hybrid à RF-MEMS SiP

Spiral Inductor

BCB

Mounted component

Cu

Ni/Au

Cusolder

Al

RF-MEMS

Source: Imec

High Res substrate



H. Tilmans (IMEC)




Spiral Inductor

Mounted component

Cu

Ni/Au

Cusolder

Al

CAP

BCB

High Res substrate





Ø Preferably serve as a carrier substrate for mounting actives (and other discrete passives) à RF-SiP

Ø Next evolutionary path: include RF-MEMS (flexible) passives:§ Hybrid à RF-MEMS SiP

§ Monolithic à RF-MEMS MCM/RF-MEMS SiP

switch



Conclusions and outlook

• Mobile wireless communication systems (handsets) are complex embedded systems where all functional blocks are custom-made for mobility. The combination of miniaturization and functionality is unprecedented compared to other consumer products.

• Next-generation mobile handsets will accommodate multiple wireless standards (3G, WiFi, WiMax, DTV, ..) and multiple frequency bands and will be based on software-defined-radio (SDR), asking for

– A reconfigurable RF interface/architecture

– Mode/band switching, Tx/Rx switching

– More and smaller antennas àààà antenna impedance matching

– More and higher efficient PAs àààà PA impedance matching

– Tunable/switchable filters

– ……

• There is a need for reconfigurable/tunable RF components (L’s, C’s, filter, switch, …);

• RF-MEMS is a key enabling (disruptive) technology for reconfigurable radio front-ends satisfying functionality requirements, miniaturization, reduction of component count, long battery life, improved electrical performance, low cost, ….

• High integration level / “Integratability” (with CMOS and/or as passive platform) is one attractive feature of RF-MEMS technology

• The state of RF-MEMS in handsets:

– BAW fixed frequency filters based on FBAR/SMR have proven themselves; Fixed frequency filters based on mechanical resonators are still very far from industrialization

– Silicon (BAW) resonators are emerging to replace quartz crystal resonators, but very tough stability requirements

– RF-MEMS switch technologies still requires proof for RF applications. There still remains research work to be done in terms of: Packaging, reliability (stiction, switch life cycles), power handling, price (low cost wafer process (foundry compatible) and packaging process needed)

– Implementation of switchable filter banks are hampered by the development stage of MEMS switches

– Tunable RF filters are still very far from implementation;

– …….


H. Tilmans (IMEC)




MEMS design: Gerard Klaasse (now Sensata), Wanling Pan (now GTU), Laurent Francis (now

UCL), Kris Verheyen, Steve Stoffels

RF design: Xavier Rottenberg, Geert Carchon, Kristof Vaesen, Steven Brebels, Walter De Raedt

Technology: Philippe Soussan, Philip Ekkels, Laurent Francis (now UCL), Gerard Klaasse (nos

Sensata), Kris Verheyen, Philip Nolmans, Henri Jansen (now UT), Ann Witvrouw

Packaging: Anne Jourdain, Piet De Moor, Serguei Stoukatch, Eric Beyne

Materials and Reliability: Piotr Czarnecki, Stanislaw Kalicinski, Robert Modlinski, Ann

Witvrouw, Ingrid De Wolf

System design: Kristof Vaesen, Piet Wambacq

Acknowledgements - the IMEC RF-MEMS team



Thank YouThank YouThank YouThank You

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RF-MEMS: An enabling technology for reconfigurable radio ... reddot/chairemems/documents... · RF-MEMS: An enabling technology for Reconfigurable Radio Front-ends H. Tilmans (IMEC)