RF & Microwave Capability & Roadmap - Microsemi

Power Matters

RF & Microwave Capability & Roadmap

Microsemi Space Forum Russia – November 2013 Pete Blanchard, Senior Field Applications Engineer, RF Integrated Solutions Group

© 2013 Microsemi Corporation. Company Proprietary.

Power Matters.

RF & microwave products

• Si PIN, SRD, and varactor diodes

• GaAs PIN and varactor diodes

• Si bipolar power transistors

RF Integrated Solutions Space Heritage

© 2013 Microsemi Corporation. Company Proprietary. 2

Power Matters.

Applications • RF switching and attenuation

• Communication data links

• Conversion / Modulation

• Surveillance / tracking

• Telemetry / guidance

• Receiver protection

• Imaging / profiling

• Meteorological

• Broadcast

• Scientific

• Military

• Tuning

• GPS

RF Integrated Solutions Space Heritage


Power Matters.

RF Integrated Solutions – Diode Products

Si & GaAs


Power Matters.

RFIS Diode Products Overview


Power Matters.



Silicon and GaAs diodes – Schottky, PIN, varactor

Diodes available as die or packaged

Package options include:

• Microwave (higher freq) – ceramic, MMSM, stripline

• Surface mount – MMSM, EPSM, MELF, GigaMite, SOT-23, thru-hole

Diode based control components – switches, limiters, detectors

Catalog and custom devices, components, & transceivers

Military, commercial, semi-cap and ISM markets

MIL-STD-750, MIL-STD-883, MIL-PRF-19500, Hi-Rel screening available, element evaluation sample testing for space qualification

Power Matters.



Silicon Diodes • PINs

• Schottkys

• Varactors

• Limiter

• Multiplier

• Noise

• SPST Switch Element

GaAs Diodes • PINs

• Schottkys

• Varactors

• Gunn

• Impatt

Power Matters.

RFIS Diode Products Space Applications


• Switches

• Limiters

• Attenuators

• Detectors

• Phase Shifters

• Tunable Filters

• VCOs

• Mixers

• Up and Down Converters

• Phased Array Antennas

• Antenna Tuning Units

• T/R Switches

Power Matters.

Heritage/Current RFIS Diodes Space Programs


Satellite / Program

Amazonas 3 Echostar XI Galileo Nimiq 6 Viasat ISDLA-1

Anik G1 Echostar XIV GPS Block III QuetzSat Wildblue 1 ISDLA-2

ARGON Echostar XV Hispasat 1E Satmex 6 XM-5 NBNCo-1A

Asiasat 5 Echostar XVI ICO G1 SES Sirius 5 ABS-2 NBNCo-1B

Asiasat 7 Echostar XVII Intelsat 14 Sirius FM-5 Asiasat 6 Optus-10

DirecTV-7S Galaxy 16 Intelsat 17 Telstar 14R Asiasat 8 Sirius 6

DirecTV-8 Galaxy 18 Intelsat 19 TerreStar 1 DirecTV-14 Thor 7

DirecTV-9S Galaxy 19 Intelsat 20 Thor 7 Echostar XVIII Jupiter 2

Power Matters.

RF Integrated Solutions – Transistor Products

Si, SiC, GaN on SIC


http://images.google.com/imgres?imgurl=http://www.physorg.com/newman/gfx/news/2005/GalileoImageGSTB-V2A.jpeg&imgrefurl=http://www.physorg.com/news8635.html&usg=__T6muIFlf2GXqNGmbEYWtmeI69Z8=&h=400&w=400&sz=60&hl=en&start=20&um=1&tbnid=FqbRQzDxY7KVpM:&tbnh=124&tbnw=124&prev=/images?q=galileo+satellite&hl=en&sa=N&um=1

Power Matters.

HF to C-band today, X & Ku band under development

Si bipolar – HF to S-band, Pulsed/CW, Class A/AB/C, Vcc<52V

SiC SIT – VHF & UHF, pulsed class AB, Vdd=100-125V

GaN on SiC HEMT, class AB, Vdd=45-65V

• L band through C-Band today, pulsed & CW

• X & Ku band under development, pulsed & CW

• Broadband CW under development

VHF to UHF – <1W to 2200W

L-Band – Up to 1100W

S-Band – Up to 500W

C-Band – Up to 100W

RFIS Discrete Transistor Products Overview


Power Matters.

Si bipolar proven device technology for space applications • Rugged, robust, radiation hard

• Proper choice of package considering properties of materials, physical strength, electrical & thermal properties

• Robustness assured by device processing, piece part selection, single metal configuration, and electrical testing

• Hermetically sealed gold plated metal ceramic packages & all gold bond wire and wafer metallization

• IR scan for thermal resistance measurements under RF conditions

• 100% DC and RF electrical testing

• MIL-STD-19500 JAN-S flow screening

• Customer tailored device screening

• ISO9001 registered

RFIS Discrete Transistor Products Overview


Power Matters.

Power Amplifiers – CW and Pulsed

Communication data links

Surveillance / tracking

Telemetry / guidance

Ground penetrating

Imaging / profiling

Scatterometers

Meteorological

Broadcast

Scientific

Military

Clocks

GPS

RFIS Space Power Transistor Applications


Power Matters.

RFIS Si Bipolar Space Heritage/Current


Platform Application Freq Band

GPS III* Navigation & Communication UHF

Classified govt satellite Space based infra-red system (SBIR) S

GPS III Frequency standard clock in navigation system L

Galileo Constellation* Maser Clock UHF

Satellite (JPL)* Power amp for on board radar- soil moisture measurements L

Meteorological Satellite* Data Transmission S

P142 classified govt. satellite* Power amp line up for communication UHF

Galileo Constellation* Navigation and communication, clock signal UHF

Aquarius Satellite* SSPA on scatterometer for measuring sea water salinity L

* Multiple RF power transistors

Power Matters.

Wide Band Gap

SiC & GaN on SiC


Power Matters.

Wide Band Gap Material Property Advantages


Material Property Si SiC GaN

Band Gap (eV)

3 Times Silicon

1.1 3.2 3.5

Critical Field (106

V/cm)

Ten Times Silicon

0.3 3 3.3

Thermal

Conductivity

(Watt/cm2-K)

3 Times Silicon

1.5 4.9 >1.5

High operating

temperature

High breakdown voltage,

higher power output,

higher impedance

Higher Power Per part

Capability System Benefit

• Increase reliability

• High operating temperature

• Higher power

• Wider bandwidth amplifier

• Reduce part size

• Minimize cooling requirements

3X

10X

3X

Power Matters.

2200W Single Ended UHF SiC SIT 125V


0405SC-2200M

125V, 406-450MHz, 300us, 6%

Power Matters.

SiC Power Transistor Devices


High breakdown voltage allows the benefits of high voltage operation > 100 Volts

Vertical structure not dependant on dielectric field strength

Vertical Structure = High Power Density

SIT operation in Class AB Wide dynamic range

SIT device extremely rugged

SIT has high breakdown to Vdd Ratio

Power Matters.

GaN Devices Improve Size, Weight & Power


Output TR

x4 Driver

x1

Before Now

• One GaN replaces Five Si BJT transistors

GaN Power

2729GN-500

Power Matters.

GaN Technology Advantages


Highest power per transistor than other solid state solutions - Si BJT, LDMOS, GaAs

Highest power density – smallest transistor size

Ability to cover higher frequency

Excellent Temperature stability

Better Efficiency

Broad Band Application

Power Matters.

GaN Temperature Stability Advantage Example


Less Than 1dB Gain and Power Varition from -55o to +85o C

• Heavy Mode-S ELM pulsing

• High Power >700W

• High Gain > 21 dB

• Excellent Efficiency > 70%

Temp (oC) Pin (W) Pout (W) Gp (dB) Δ Gain

-55 5 621 20.9 -0.7

+25 5 720 21.6 0

+85 5 621 20.9 -0.7

Power Matters.

24+ New 2013 50V GaN Power Transistors


Power Matters. © 2013 Microsemi Corporation. Company Proprietary. 23

1200 – 1400MHz, 300us,10% , +50V • 1.2 – 1.4 GHz

• High Output Power >600W

• High Gain > 17.5 dB typ

• Excellent Efficiency > 60% Typical Performance

New Long Pulse 1214GN – 600VHE (High

Efficiency)

Freq(GHz) Pin (W) Pout (W) Id (A) RL (dB) Eff(%) G (dB) Droop (dB) 1.2 11.2 656 2.20 -10.0 63% 17.67 0.5

1.3 11.2 644 2.06 -8.8 66% 17.59 0.4

1.4 11.2 647 1.94 -15.0 70% 17.61 0.3

Power Matters. © 2013 Microsemi Corporation. Company Proprietary. 24

1200 – 1400MHz, 3ms, 30% , +50V • 1.2 – 1.4 GHz

• High Output Power >300W

• High Gain > 16 dB

• Excellent Efficiency > 60% Freq

(GHz)

Pin (W) Pout (W) Gp (dB) Effi (%)

1.2 7.9 349 16.4 64

1.3 7.9 346 16.4 60

1.4 7.9 327 16.2 64

Prototype Performance

New Long Pulse 1214GN – 300LV

Power Matters.

From Heritage to New Technologies

The challenges & benefits


Power Matters.

Adopting New Technologies


Development cycle can exceed 4 years before purchase of flight units

From flight units purchase to launch can be another 3-5 years

Requires solid long term engineering and production commitment by Microsemi

Engage closely with space payload/satellite platform manufacturer(s) to collaborate on the consideration for use in space new technologies

With all Microsemi divisions having products for space, participate in the industry trade shows/forums/conferences together to offer greatest benefit to the market and our customers offering many products vertically

Seek to develop/acquire the best new technologies for new space products

Overcome Recession/Sequestration and other funding issues

Phase 1 – up to 4 years

Design Start

Prototype Delivery

Test and Evaluation

Purchase Flight Units

Phase 2 – 3-5 years

Sub systems assembly

Test and Evaluation

Spacecraft Integration

Launch set mount and test

Power Matters.

Adopting New Technologies


Collaboration allows improved development cycle time

Microsemi broad space products portfolio can reduce supplier count costs

Microsemi commitment to leading edge space products technologies will increase performance and decrease development and operating costs

Overcome Recession/Sequestration and other funding

Where Power Matters, we can together outfit high-performance satellites and payloads to be more safe, secure, and reliable

Power Matters

Thank You

© 2013 Microsemi Corporation. Company Proprietary.

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RF & Microwave Capability & Roadmap - Microsemi