22
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan 2002 The mark shows major revised points. FEATURES Compact package Resistors built-in type Complementary to KA4xxx ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current (DC) IC 0.1 A Collector Current (pulse) Note IC(pulse) 0.2 A Total Power Dissipation PT 0.15 W Junction Temperature Tj 150 °C Storage Temperature Tstg –55 to +150 °C Note PW 10 ms, Duty Cycle 50% PART NUMBER MARK R1 R2 UNIT PART NUMBER MARK R1 R2 UNIT KN4A4M A7 10.0 10.0 kKN4L4L K7 47.0 22.0 kKN4F4M B7 22.0 22.0 kKN4A4Z Y7 10.0 kKN4L4M C7 47.0 47.0 kKN4F4Z Z7 22.0 kKN4L3M D7 4.7 4.7 kKN4L4Z N7 47.0 kKN4L3N E7 4.7 10.0 kKN4F3M P7 2.2 2.2 kKN4L3Z F7 4.7 kKN4F3P Q7 2.2 10.0 kKN4A3Q G7 1.0 10.0 kKN4F3R R7 2.2 47.0 kKN4A4P H7 10.0 47.0 kKN4A4L S7 10.0 4.7 kKN4F4N X7 22.0 47.0 kKN4L4K T7 47.0 10.0 kPACKAGE DRAWING (Unit: mm) 0.6 0.75 ± 0.05 0 to 0.1 0.15 +0.1 –0.05 1.6 ± 0.1 0.8 ± 0.1 0.5 2 1 3 1.0 1.6 ± 0.1 0.2 +0.1 –0 0.5 0.3 +0.1 –0 EQUIVALENT CIRCUIT 2 R1 R2 1 3 PIN CONNECTION 1: Emitter 2: Base 3: Collector

RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

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Page 1: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

SILICON TRANSISTOR

KN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR

DATA SHEET

Document No. D16489EJ3V0DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan 2002

The mark shows major revised points.

FEATURES • Compact package

• Resistors built-in type

• Complementary to KA4xxx

ORDERING INFORMATION

PART NUMBER PACKAGE

KN4xxx SC-75 (USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage VCBO −60 V

Collector to Emitter Voltage VCEO −50 V

Emitter to Base Voltage VEBO −5 V

Collector Current (DC) IC −0.1 A

Collector Current (pulse) Note IC(pulse) −0.2 A

Total Power Dissipation PT 0.15 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg –55 to +150 °C

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

PART NUMBER MARK R1 R2 UNIT PART NUMBER MARK R1 R2 UNIT

KN4A4M A7 10.0 10.0 kΩ KN4L4L K7 47.0 22.0 kΩ

KN4F4M B7 22.0 22.0 kΩ KN4A4Z Y7 10.0 kΩ

KN4L4M C7 47.0 47.0 kΩ KN4F4Z Z7 22.0 kΩ

KN4L3M D7 4.7 4.7 kΩ KN4L4Z N7 47.0 kΩ

KN4L3N E7 4.7 10.0 kΩ KN4F3M P7 2.2 2.2 kΩ

KN4L3Z F7 4.7 kΩ KN4F3P Q7 2.2 10.0 kΩ

KN4A3Q G7 1.0 10.0 kΩ KN4F3R R7 2.2 47.0 kΩ

KN4A4P H7 10.0 47.0 kΩ KN4A4L S7 10.0 4.7 kΩ

KN4F4N X7 22.0 47.0 kΩ KN4L4K T7 47.0 10.0 kΩ

PACKAGE DRAWING (Unit: mm)

0.6

0.75 ± 0.05

0 to 0.1

0.15 +0.1–0.05

1.6

± 0

.1

0.8

± 0

.10.5

2 1

3

1.0

1.6 ± 0.1

0.2+0.1–0

0.5

0.3 +0.1–0

EQUIVALENT CIRCUIT

2

R1

R21

3

PIN CONNECTION

1: Emitter

2: Base

3: Collector

Page 2: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 2

KN4xxx

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Collector Cut-off Current ICBO VCB = −50 V, IE = 0 −100 nA

DC Current Gain hFE1 VCE = −5.0 V, IC = −5.0 mA Note1 -

hFE2 VCE = −5.0 V, IC = −50 mA -

Collector Saturation Voltage VCE(sat) IC = −5.0 mA, IB = −0.25 mA −0.2 V

Low-level Input Voltage VIL VCE = −5.0 V, IC = −100 µA Note2 V

High-level Input Voltage VIH VCE = −0.2 V, IC = −5.0 mA V

Input Resistor R1 Note3 kΩ

Emitter to Base Resistor R2 kΩ

Note 1.

PART NUMBER hFE1 hFE2 UNIT MIN. TYP. MAX. MIN. TYP. MAX.

KN4A4M 35 100 80 - KN4F4M 60 195 90 - KN4L4M 85 340 95 - KN4L3M 20 80 80 - KN4L3N 35 100 80 - KN4L3Z 135 600 100 - KN4A3Q 35 100 80 - KN4A4P 85 340 95 - KN4F4N 85 340 95 - KN4L4L 60 195 90 - KN4A4Z 135 600 100 - KN4F4Z 135 600 100 - KN4L4Z 135 600 100 - KN4F3M 8 50 50 - KN4F3P 35 100 80 - KN4F3R 85 340 95 - KN4A4L 20 80 80 - KN4L4K 35 100 80 -

Note 2.

PART NUMBER VIL VIH UNIT MIN. TYP. MAX. MIN. TYP. MAX.

KN4A4M −0.8 −3.0 V KN4F4M −0.8 −4.0 V KN4L4M −0.8 −5.0 V KN4L3M −0.8 −3.0 V KN4L3N −0.6 −3.0 V KN4L3Z −0.5 −1.2 V KN4A3Q −0.5 −2.0 V KN4A4P −0.5 −3.0 V KN4F4N −0.6 −3.0 V KN4L4L −0.9 −6.0 V KN4A4Z −0.5 −2.0 V KN4F4Z −0.5 −3.0 V KN4L4Z −0.5 −4.0 V KN4F3M −0.8 −3.0 V KN4F3P −0.5 −2.0 V KN4F3R −0.5 −2.0 V KN4A4L −0.9 −6.0 V KN4L4K −2.0 −8.0 V

Page 3: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 3

KN4xxx

Note 3. PART NUMBER R1 R2 UNIT

MIN. TYP. MAX. MIN. TYP. MAX. KN4A4M 7.00 10.00 13.00 7.00 10.00 13.00 kΩ KN4F4M 15.40 22.00 28.60 15.40 22.00 28.60 kΩ KN4L4M 32.90 47.00 61.10 32.90 47.00 61.10 kΩ KN4L3M 3.29 4.70 6.11 3.29 4.70 6.11 kΩ KN4L3N 3.29 4.70 6.11 7.00 10.00 13.00 kΩ KN4L3Z 3.29 4.70 6.11 kΩ KN4A3Q 0.70 1.00 1.30 7.00 10.00 13.00 kΩ KN4A4P 7.00 10.00 13.00 32.90 47.00 61.10 kΩ KN4F4N 15.40 22.00 28.60 32.90 47.00 61.10 kΩ KN4L4L 32.90 47.00 61.10 15.40 22.00 28.60 kΩ KN4A4Z 7.00 10.00 13.00 kΩ KN4F4Z 15.40 22.00 28.60 kΩ KN4L4Z 32.90 47.00 61.10 kΩ KN4F3M 1.54 2.20 2.86 1.54 2.20 2.86 kΩ KN4F3P 1.54 2.20 2.86 7.00 10.00 13.00 kΩ KN4F3R 1.54 2.20 2.86 32.90 47.00 61.10 kΩ KN4A4L 7.00 10.00 13.00 3.29 4.70 6.11 kΩ KN4L4K 32.90 47.00 61.10 7.00 10.00 13.00 kΩ

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

PT

- To

tal P

ower

Dis

sipa

tion

- mW

0

50

100

150

200

250

0 50 100 150 200

TA - Ambient Temperature - °C

Page 4: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 4

KN4xxx

[KN4A4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC

- C

olle

ctor

Cur

rent

- m

A

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

IB = −430 Aµ −380

−330

−280

−230

−180

−130

−80

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 - 1.8

VCE = −5.0 V

25°C −25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

4

8

12

16

20

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 5: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 5

KN4xxx

[KN4F4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−350

−300

−250

−200

−150

−100

−50

IB = −400 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40

VIN = 5.0 V 10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6

VCE = −5.0 V

25°C−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

10

20

30

40

50

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 6: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 6

KN4xxx

[KN4L4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−240

−190

−140

−90

−40

IB = −290 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40

VIN = 5.0 V10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

10

100

1000

- 1 - 10 - 100

VCE = −5.0V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 - 1.8

VCE = −5.0 V

25°C−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

20

40

60

80

100

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 7: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 7

KN4xxx

[KN4L3M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−410

−360

−310

−260

−210

−160

IB = −460 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 - 1.8

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

2

4

6

8

10

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 8: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 8

KN4xxx

[KN4L3N] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−380

−330

−280

−230

−180

−130

−80

IB = −430 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.4 - 0.6 - 0.8 - 1 - 1.2

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

4

8

12

16

20

-25 0 25 50 75 100

R2

R1

TA - Ambient Temperature - °C

Page 9: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 9

KN4xxx

[KN4L3Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−300

−250

−200

−150

−100

−50

IB = −350 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

2

4

6

8

10

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 10: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 10

KN4xxx

[KN4A3Q] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−330

−280

−230

−180

−130

−80

IB = −380 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C

−25°CTA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

2

4

6

8

10

12

-25 0 25 50 75 100

R2

R1

TA - Ambient Temperature - °C

Page 11: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 11

KN4xxx

[KN4A4P] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−140

−120

−100

−80

−60

−40

−20

IB = −160 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

20

40

60

-25 0 25 50 75 100

R2

R1

TA - Ambient Temperature - °C

Page 12: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 12

KN4xxx

[KN4F4N] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−140

−120

−100

−80

−60

−40

−20

IB = −160 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80

VIN = 5.0 V

10.0 V15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

10

20

30

40

50

60

70

80

-25 0 25 50 75 100

R2

R1

TA - Ambient Temperature - °C

Page 13: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 13

KN4xxx

[KN4L4L] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−300

−250

−200

−150

−100

−50

IB = −400 Aµ−350

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.9 - 1.1 - 1.3 - 1.5 - 1.7 - 1.9 - 2.1 - 2.3 - 2.5 - 2.7

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

20

40

60

-25 0 25 50 75 100

R1

R2

TA - Ambient Temperature - °C

Page 14: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 14

KN4xxx

[KN4A4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−300

−250

−200

−150

−100

−50

IB = −350 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

0 - 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

4

8

12

16

20

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 15: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 15

KN4xxx

[KN4F4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−300

−250

−200

−150

−100

−50

IB = −350 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

0 - 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

10

20

30

40

50

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 16: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 16

KN4xxx

[KN4L4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−120

−100

−80

−60

−40

−20

IB = −160 Aµ−140

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C −25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

20

40

60

80

100

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Page 17: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 17

KN4xxx

[KN4F3M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−250

−150

IB = −450 Aµ

−350

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 - 1.8 - 2

VCE = −5.0 V

25°C−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

1

2

3

4

5

-40 -20 0 20 40 60 80

TA - Ambient Temperature - °C

Page 18: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 18

KN4xxx

[KN4F3P] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−250

−200

−150

−100

−50

IB = −300 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

0 - 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C

−25°C

TA = 75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80

R2

R1

TA - Ambient Temperature - °C

Page 19: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 19

KN4xxx

[KN4F3R] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGEvs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−250

−200

−150

−100

−50

IB = −300 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

0 - 0.2 - 0.4 - 0.6 - 0.8 - 1

VCE = −5.0 V

25°C

TA = −25°C

75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R1 -

Res

isto

r - k

Ω

0

1

2

3

4

5

-40 -20 0 20 40 60 800

10

20

30

40

50

60

70

R2

R1

TA - Ambient Temperature - °C

R1 -

Res

isto

r - k

Ω

Page 20: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 20

KN4xxx

[KN4A4L] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−300

−250

−200

−150

−100

−50

IB = −350 Aµ

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 20 - 40 - 60 - 80 - 100

VIN = 5.0 V

10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IBTA = 75°C

25°C−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 1 - 1.2 - 1.4 - 1.6 - 1.8 - 2 - 2.2 - 2.4 - 2.6

VCE = −5.0 V

25°C

TA = −25°C

75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80

R2

R1

TA - Ambient Temperature - °C

Page 21: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

Data Sheet D16489EJ3V0DS 21

KN4xxx

[KN4L4K] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

IC -

Col

lect

or C

urre

nt -

mA

0 −2 −4 −6 −8 −10

−50

−40

−30

−20

−10

0

−200

−150

−100

−50

IB = −350 Aµ −300 −250

VCE - Collector to Emitter Voltage - V

VC

E - C

olle

ctor

to E

mitt

er V

olta

ge -

V

0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

0 - 5 - 10 - 15 - 20 - 25 - 30 - 35 - 40

VIN = 5.0 V 10.0 V

15.0 V

IC - Collector Current - mA

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT

hFE -

DC

Cur

rent

Gai

n

1

10

100

1000

- 1 - 10 - 100

VCE = −5.0 V

TA = 75°C25°C

−25°C

IC - Collector Current - mA

V

CE(

sat) -

Col

lect

or S

atur

atio

n V

olta

ge -

V

- 0.01

- 0.1

- 1

- 1 - 10 - 100

IC = 10・IB

TA = 75°C25°C

−25°C

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

VIN

- In

put V

olta

ge -

V

- 0.1

- 1

- 10

- 100

- 1 - 10 - 100

VCE = −0.2 V

TA = −25°C25°C75°C

IC - Collector Current - mA

IC -

Col

lect

or C

urre

nt -

µA

- 1

- 10

- 100

- 1000

- 2 - 2.4 - 2.8 - 3.2 - 3.6 - 4 - 4.4 - 4.8

VCE = −5.0 V

25°C

TA = −25°C

75°C

VIN - Input Voltage - V

RESISTOR vs. AMBIENT TEMPERATURE

R -

Res

isto

r - k

Ω

0

10

20

30

40

50

60

70

-40 -20 0 20 40 60 80

R1

R2

TA - Ambient Temperature - °C

Page 22: RESISTOR BUILT-IN TYPE PNP TRANSISTOR · SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR DATA SHEET Document No. D16489EJ3V0DS00 (3rd edition) Date Published October

KN4xxx

The information in this document is current as of October 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipmentand industrial robots.

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support).

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application.

(Note)(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

majority-owned subsidiaries.(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

defined above).

M8E 02. 11-1