Recent Advances in 900 V to 10 kV SiC MOSFET … 15, 2016 · Recent Advances in 900 V to 10 kV SiC MOSFET Technology ... • Third Quadrant IV Characteristics are Parallel Combination

Recent Advances in900 V to 10 kV SiC MOSFET Technology

© 2015 Cree, Inc. All rights reserved.© 2015 Cree, Inc. All rights reserved.A CREE COMPANY

900 V to 10 kV SiC MOSFET Technology

David Grider, Ph.D.Wolfspeed, a Cree [email protected] or 919-607-8185

D. Grider, J. Casady, V. Pala, E .Van Brunt, B. Hull, S-H. Ryu, G-Y. Wang, J .Richmond, S. Allen,J. Palmour, P. Killeen, B. McPherson, K .Olejniczak, B. Passmore, D. Simco, T. McNutt

2

© 2015 Cree, Inc. All rights reserved.

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• Cree/Wolfspeed Gen 3 MOSFETs– Specific RDSON of 900V-1700V MOSFETs– Rel data for smaller (65mOhm) 900V MOSFETs

• 900V, 10mOhm SiC MOSFET chip characteristics– Static, dynamic, short-circuit, reliability

• 1.2kV & 1.7kV Gen 3 SiC MOSFETs• 3.3kV & 6.5kV SiC MOSFETs

OUTLINE

Power and RF Division


• 3.3kV & 6.5kV SiC MOSFETs– DC over temperature (3.3kV)– Dynamic characteristics at temperature (3.3kV)

• 10kV SiC MOSFETs– DC over temperature– Dynamic characteristics at temperature

• Summary

Cree/WolfspeedGen 3 SiC MOSFETs


Cree/WolfspeedGen 3 SiC MOSFETs

5

Optimized doping

Reduced pitch


Gen 2 DMOS Gen 3 DMOS

Commercially released in 2013 as “C2M” product family at 1.2-1.7kV

Commercially released in 2015 as “C3M” product 65

Design and automotive qualify 32mm2 chip which has >2X lower RDSON than any commercial FET

6NEXT-GEN SiC DMOS LOWERS RON,SP DRAMATICALLY

10

100

(mc

m2)a

tVG

=20

V

3.3 kV

10 kV

15 kV

6.5 kV

2011 release(1200V)

•Gen 3 SiC DMOS haslowest RON,SP in market

•Gen 3 SiC DMOS haslower RON,SP thantrench SiC MOSFET


1

10

100 1,000 10,000

RO

N,S

P(m

Breakdown Voltage (V)

3.3 kV

Gen 3 C3M900V

Gen 2, C2M Family1.2 kV

Gen 1, CMF Family1.2 kV

R&D 1.2 kV

2013 release(1200V & 1700V)

2015 release(900V)

2

2

7CREE SiC MOSFET PORTFOLIO SUMMARY


TO-220-3 TO-247-3 TO-263-7

8LIFETIME PROJECTIONS FOR C3M065090 (900V, 65mOhm)

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

Pro

jec

ted

Lif

eti

me

(Ho

urs

)

T1% (slope based on Gen 2)


• 900V rating results in 65 years before the first projected 1% of failures

• At 1kV continuous voltage, projected failure time for first 1% is 9 years

• Avalanche rated: zero fails in 1,000 hours at 50 μA, V > 1200V

1E+01

1E+02

1E+03

500 600 700 800 900 1000 1100 1200 1300

Pro

jec

ted

Lif

eti

me

(Ho

urs

)

Vd Stress (Volts)

First failurein avalanche

9LIFETIME PROJECTIONS FOR C3M065090 GATE OXIDES

MTTF (T50%)

~600M hours~10M hours


• Extrapolated VGS lifetime of ~600M hours at +15V (DC recommended operating point)

• Passed AEC-Q101 qualification of 3 lots x 77 parts with Ø fails in 1,000 hrs at VGS=15V, 150C

Tested to Failure35 parts per step

T=150°C

10SIMPLIFY DC FAST CHARGERS:FB LLC RESONANT CONVERTER

Resonant Tank


Silicon (overcome HV):600V MOS to get >800V DC LinkThree-level LLC Full bridge

Typical switch 100 kHz – 200 kHz

Complicated topology and control Additional clamp diodes

Silicon Carbide:900V SiC MOS (reliable up to 1kV)Two-level FB ZVS LLC resonant

Target switch >200 kHz – 400 kHz Reduce BOM cost by 20% & efficiency Simplify the converter design Reduce resonant tank size

Three-level (3L)Resonant Tank

Two-level (2L) Resonant Tank

Si to SiC

11

Voltage Rating &Technology

Part # On-resistance &Current at Tc = 100C

Distribution priceper 100

900VSilicon

IPW90R120C3 120 mohm23 A

$11.50

900VSilicon Carbide

C3M0065090J 65 mohm23 A

$9.62

COST COMPARISON BETWEEN SILICON, SiC, AND GaN


Silicon Carbide 23 A650VGaN

GS66508P-E05-TY 50 mohm23 A

$27.07

For High Speed Switches, SiC is currently the least expensive at 900V

900V, 10mOhm SiC MOSFETDie Characteristics


900V, 10mOhm SiC MOSFETDie Characteristics

13

• Comparing 900V SiC MOSFET to 650V Si

• Lower positive temperature coefficient than Si superjunction MOSFET– 900V SiC MOSFET– 650V Si MOSFET

• No knee voltage as found in IGBT

35

40

45

) 100

120

So

urc

eC

urr

ent


0

5

10

15

20

25

30

35

25 50 75 100 125 150 175

ON

Res

ista

nce

(m

Temperature (C)

0

20

40

60

80

0 0.5 1 1.5 2 2.5

Dra

in-S

ou

rce

Cu

rren

t

Drain-Source Voltage

Infineon 650V 100 A IGBT, Part No. IGZ100N65H5, http://www.infineon.com/dgdl/Infineon-IGZ100N65H5-DS-v02_01-EN.pdf.

14

• The 900V 10 m SiC MOSFET chip is capable of extremely fast transitions.

• In TO-247-3, LS in the gate driver loop will limit the switching speed.TO-247-3 package and TO-247-4 package evaluated.

• TO-247-4 has a separate source return pin for the gate driver equivalentcircuit. VG,KS is not affected by the voltage drop in the source inductance LS2introduced by the di/dt of the drain-source current.


D

KS

G

S

TO-247-4

TO-247-3

15

• LEFT: Comparison of Turn-OFF for 900V, 10 m SiC MOSFET inTO-247-3 and TO-247-4 packages (RG GS=-4V/+15V)

• RIGHT: Comparison of Turn-ON for 900V, 10 m SiC MOSFET inTO-247-3 and TO-247-4 packages (RG GS=-4V/+15V)

160800RG = 5 OhmsTJ = TAmb = 25 °CVDS

TO-247-4

160800RG = 5 OhmsTJ = TAmb = 25 °C

Turn-OFF Turn-ON


-40

0

40

80

120

-200

0

200

400

600

0 50 100 150 200 250 300

Dra

in-S

ourc

eC

urr

ent

(A)

Dra

in-S

ou

rce

Vol

tag

e(V

)

Time(ns)

TO-247-4TO-247-3

IDS

TO-247-4TO-247-3

-40

0

40

80

120

-200

0

200

400

600

1200 1250 1300 1350 1400 1450 1500

Dra

in-S

ourc

eC

urr

ent

(A)

Dra

in-S

ourc

eV

olt

age

(V)

Time(ns)

IDS

TO-247-4TO-247-3

VDS

TO-247-4TO-247-3

16

• LEFT: Switching Energy losses at 25 C for 900V, 10 m SiC MOSFET in TO-247-3package (RG GS=-4V/+15V, VDD=600V)

• RIGHT: Switching Energy losses at 25 C for 900V, 10 m SiC MOSFET in TO-247-4package (RG GS=-4V/+15V, VDD=600V)

7

8RG=5 T T = 25 C 7

8RG=5 T T = 25 C

~3.5X lower switching energy with Kelvin Source contact


0

1

2

3

4

5

6

7

10 20 30 40 50 60 70 80 90 100

Sw

itch

ing

En

erg

yL

oss

(mJ

)

Drain-Source Current

ESW

EON

EOFF

TJ = Tamb = 25 C

0

1

2

3

4

5

6

7

10 20 30 40 50 60 70 80 90 100

Sw

itch

ing

En

ergy

Los

s(m

J)

Drain-Source Current

ESW

EON

EOFF

TJ = Tamb = 25 C

TO-247-3L TO-247-4L

TO-247-3TO-247-4

900V SIC MOSFETB D P


900V S C MOSFETBODY DIODE PERFORMANCE

Third Quadrant Operation – Maximizing Efficiency

-20

-10

0

10

20

30

40

ID(A

)

CMF20120D MOSFET at 25C

0V

5V

10V-20

-10

0

10

20

30

40

ID(A

)

CMF20120D MOSFET at 25C

0V

5V

10V


-40

-30

-20

-5 -2.5 0 2.5 5

VDS (V)

10V

15V

20V

-40

-30

-20

-5 -2.5 0 2.5 5

VDS (V)

10V

15V

20V

• SiC MOSFETs Have Built-In Body Diode That Can Be ExploitedIn Applications Requiring Antiparallel Conduction

• Third Quadrant IV Characteristics are Parallel Combination of SiC MOSFET and PN diode

• Applying Positive Gate Bias Turns the SiC MOSFET Fully On

• Conduction is Symmetric for Positive and Negative VDS – Synchronous Rectification

19

• LEFT: 3rd Quadrant characteristics of the 900V, 10 m MOSFET at 175C

• RIGHT: Reverse recovery waveforms of the 900V, 10 m MOSFET at 25Cand 150C

• Body diode with 3rd quadrant an excellent option for bidirectional flow

• Reverse recovery time is only 56 ns.

0-6 -5 -4 -3 -2 -1 0

T =175 C 80

100

QRR is 510 nC


-120

-100

-80

-60

-40

-20

0

Dra

in-S

ourc

eC

urr

ent

Drain-Source Voltage

VGS=-4 V

VGS=0V VGS=15V

TJ=175 C

-40

-20

0

20

40

60

80

1000 1025 1050 1075 1100 1125 1150 1175 1200

Dra

in-S

ou

rce

Cu

rren

t(A

)

Time (ns)

25 C

150 C

QRR is 510 nCVR=600V

IF=90Adi/dt=1200A/us

20SHORT-CIRCUIT TESTING OF 900V, 10mOHM SiC MOSFET IN TO-247-3L

• Tested 4us with VGS = 19V• IDS was not captured on scope, but was >406A• At VDS = 500V, peak voltage was 645V, and device survived• At VDS = 600V, peak voltage was 755V, and device failed• Consistent with or above typical commercial SiC MOSFETs capability

IDS off scope (>406A) IDS off scope (>406A)


VDS=500V; tSC=4us; VGS=+19V VDS=600V; tSC=4us; VGS=+19V

Device survivedDevice failed

Test results courtesy of:

900V SiC MOSFETHalf-Bridge Module


Half-Bridge ModuleCharacteristics

22900V, 400-800A, SiC HALF-BRIDGE POWER MODULES

•

chips in ½ - bridge module–

–

• HTRB (150°C) completed


– 6 modules (48 MOSFETs)– 1000 hrs; Zero failures

• HTRB (175°C) completed– 5 modules (same modules

– 850 hrs; Zero failures

23BENCHMARK 900V SiC & 650V Si POWER MODULES• 900V SiC XAB350M09HM3 compared with

650 V EconoDUAL3 Si IGBT

• 250 V higher blocking voltage

• 10-20x lower body diode recovery, gatecharge, and reverse transfer capacitance.

• Symmetrical 3rd quadrant conduction

• Lower on-state losses


Parameter Wolfspeed XAB350M09HM3 silicon FF450R07ME4_B11Package HT-3000 (custom) EconoDUAL3Blocking voltage (V) 900 650TJ,MAX (°C) 175 150RDS, ON 2.5 / 3.6 N/AIDS @ 150°C (A) 405 430QG (nC) 648 4800QR @ 150°C (µC) 2.02 (0.504 x 4) 35.5Input capacitance, Ciss / Cies (nF) 15.7 (3.93 x 4) 27.5

Rev. transfer cap, Crss / Cres (pF) 72 (18pF x 4) 820

24900V, HALF-BRIDGE – 4 DIE/SWITCH; SWITCHING ENERGY

10

15

20

Swit

chin

gEn

erg

y(m

J)

900 V, 10 mΩ Half-Bridge Module (XAB700M09HM3)(Vbus = 600 V, RG,ext = 5 Ω, L = 16 uH)

Total Switching Energy

Turn-on Energy

• 900V SiCXAB350M09HM3

• 4 MOSFETs /switch

• Switching 600V


Switching energies 4-7X lower than comparable Si IGBT modules

0

5

0 50 100 150 200 250 300 350 400

Swit

chin

gEn

erg

y(m

J)

Drain-Source Current (A)

Turn-off Energy

Switching 600V

• ET =5mJ @ 100A

• ET =10mJ @ 200A

25IMPACT OF 900V SiC IN EV

•Assume Ford Focus EV equipped with 90kW IPM motor

•C-Max 90kW Si IGBT inverter or Wolfspeed 88kW SiC inverteras the traction drive

•Synchronous rectification of SiC devices; no diodes in

Compared with Si inverter, SiC reduces inverter losses ~67%in combined EPA drive cycle


•Synchronous rectification of SiC devices; no diodes inparallel with SiC MOSFETs

Simulation data courtesy ofFord Motor Company,based on measured resultsof Wolfspeed 900V, C3M10mOhm SiC MOSFETs

1200V and 1700V SiC MOSFET data



271.2kV & 1.7kV GEN 3 SiC MOSFETs

1.7kV SiC MOSFET1.2kV SiC MOSFET

Spec RDSON 2.7m cm2


• Nominally a 67A SiC MOSFET• RDSONmax at room temp• RDSONmax

• Nominally a 75A SiC MOSFET• RDSONmax at room temp ~• RDSONmax

Spec RDSON 2.7m cm2




293.3kV & 6.5kV GEN 3 SiC MOSFETs

6.5kV SiC MOSFET3.3kV SiC MOSFET

Spec RDSON 11m cm2


• Nominally a 20-30A SiC MOSFET• RDSONmax at room temp• RDSONmax

• Nominally a 40A SiC MOSFET• RDSONmax at room temp• RDSONmax

Spec RDSON 11m cm2

30

0.5

1

1.5

2

2.5

3

On

Re

sist

ance

,RD

SO

N(p

.u.)

IDS = 50 A

VGS = 20 Vtp < 50 μs

20

40

60

80

100

120

On

Re

sist

ance

,RD

SO

N(m

)

TJ = 150 C

TJ = 100 C

TJ = 25 C

VGS = 20 Vtp < 50 μs

DSON vs T and IDS

25°C

150°C

100°C

IDS = 50A

VGS=20V


Normalized On-Resistance vs. Temperature On-Resistance vs. Drain Current

0

0.5

25 50 75 100 125 150

On

Re

sist

ance

,R

Junction Temperature, TJ (C)

0

20

0 10 20 30 40 50

Drain-Source Current, IDS (A)

tp < 50 μs

• 2.5X increase in RDSON from 25°C to 150°C• Positive temperature coefficient• Devices can be readily paralleled

VGS=20V

tp < 50µs

31GEN3 3.3kV 45m SIC MOSFET-INITIAL HTRB DATA

100

1000

• Accelerated HTRB Testing (3.3kV – at 150°C ) of

• No Accelerated HTRB Failures Observed Up To 660 Hours


0.1

1

10

100

0 100 200 300 400 500 600 700

I DSS

(μA

)

Time (h)

32


• SiC body diode can eliminate external anti-parallel SiC diode• Elimination of external anti-parallel diode saves cost and space• Third quadrant operation of MOSFET possible for additional savings

33GEN3 3.3KV SIC MOSFET

VDS = 0V/+2.2kV

IDS = 0A/+250A


Switching Speed <150ns; Minimum Overvoltage (No Snubber)

343.3kV SIC MOSFET SWITCHING LOSS PERFORMANCE @ 25°C

Vlink = 2.2 kV, Ids = 250 A

Double Pulse Test


• At 2.2kV, 180A switching event, 45mJ total switching energy• 3.3kV SiC MOSFETs switching losses are 10-15x lower than 3.3kV Si IGBTs

35SiC XHP STYLE MODULE - INDUSTRY STANDARD HOUSING

• Engineering Samplesales

• Up to 12 MOSFETs/switch available

• Ultra-Fast Switching,Low Inductance (<20nH V+ to V-)

• Companion gate


• Companion gatedriver

• Desaturation protection,temperature sensing,programmable UVLOwith hysteresis, galvanicsignal isolation, & on-board isolated powersupplies.

10kV SiC MOSFETs


10kV SiC MOSFETs

37

16

18

208.1 mm

• Very Small Difference in On-Resistance (RDS,on) at 150 C

• Enhanced Short Circuit 10 kV SiC MOSFET has Higher Threshold Voltage

Measured I-V Characteristics at 150C of Enhanced Short CircuitCapability and Baseline Gen3 10 kV/350 mOhm SiC MOSFETs

18

20

Enhanced Short Circuit Gen310kV/350mOhm SiC MOSFET

Baseline Gen3 10kV/350mOhmSiC MOSFET


0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14

IDS

(A)

VDS(V)

8.1

mm

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14

IDS

(A)

VDS (V)

0,5 V

15, 20 V

5, 10,15,20 V

0 V

10 V

38

Short Circuit Simulation/Test of Gen 3 10 kV/350 mOhmSiC MOSFETs With Enhanced Short Circuit Capability

• Demonstrated Gen310 kV/350 mOhm SiC MOSFETsCapable of SustainingShort Circuit CurrentFor > 13 µsec at 5000V


For > 13 µsec at 5000V• Measurement and Simulation

Courtesy of Al Hefner at NIST

39

• 10 kV body diode is bipolar – lower resistance than a 10 kV JBS diode at hightemperatures

• Reverse conducting antiparallel SiC JBS diode can be eliminated

10 kV SIC MOSFET BODY DIODE STATIC CHARACTERISTICS

16

18

20

16

18

2025 C 150 C


0

2

4

6

8

10

12

14

0 5 10 15

Am

per

es(A

)

VF (V)

0

2

4

6

8

10

12

14

0 5 10 15

Am

per

es(A

)

VF (V)

40Gen3 10kV/350mOhm SiC MOSFET Body Diode Switching -Body Diode Has Low Reverse Recovery Loss

• Body Diode Has Excellent Dynamic Characteristics Low Reverse Recovery


41Gen3 10kV/350mOhm SiC MOSFET Body DiodesExhibit Stable Performance Under Constant Bias Stress

0

2

4

6

8

10

12

0 100 200 300 400 500 600

Bo

dy

Dio

de

VF

(V)

Hours

10 kV SiC MOSFET


0

2

4

6

8

10

12

0 100 200 300 400 500 600

MO

SF

ET

VD

S,O

Na

tI D

S=

20

A

Stress Time (Hrs)

51.8 mm2 devices

65.6 mm2 devices

42½ BRIDGE CONFIGURED MEASURED SWITCHING ENERGIES AND WAVEFORMS

ETS =21mJat 7kV, 15A,

ETS measured10-33mJ


½ bridge configuration used for switching

in both the high position and low positions.

at 7kV, 15A,G

43

• SiC MOSFETs released in 2011

• > 20 SiC MOSFET discretes in market

• Gen 3 SiC MOSFETs entering market

900-1700V low-profile 62mm

900-1700 V lowprofile

SUMMARY 900V TO 10kV GEN 3 SiC MOSFETS

VDSmax(V) Chip RDSON Comments

900 10 65m released 2015


3.3-6.5 kVHalf-Bridge

10kV XHV-6Half-bridge

900 10 65m released 2015Engineering samples

1200 16 Engineering samples1700 20 Engineering samples3300 41 Engineering samples6500 100 Engineering samples

10000 350 Engineering samples

44


Questions or Discussion?ACKNOWLEDGMENT

The information, data, or work presented hereinwas funded in part by DOE-EERE (DE-EE0006920),


was funded in part by DOE-EERE (DE-EE0006920),DoD-ONR (N00014-D-0145), and DoD-ARL (W911NF-12-2-0064)

EV drive cycle data analysis based on measured 900V SiC MOSFET dataprovided by Dr. Chingchi Chen and Dr. Ming Su, Ford Motor Company


Documents

Recent Advances in 900 V to 10 kV SiC MOSFET … 15, 2016 · Recent Advances in 900 V to 10 kV SiC MOSFET Technology ... • Third Quadrant IV Characteristics are Parallel Combination