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Radiation Effects on Emerging Electronic Materials and Devices. Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics. Team Members. Vanderbilt University - PowerPoint PPT Presentation
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Radiation Effects on Emerging Electronic Materials and Devices
Ron Schrimpf
Vanderbilt University
Institute for Space and Defense Electronics
Team Members
• Vanderbilt University– Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd
Massengill, Robert Reed, Ron Schrimpf, Bob Weller
– Physics: Len Feldman, Sok Pantelides
• Arizona State University– Electrical Engineering: Hugh Barnaby
• University of Florida– Electrical and Computer Engineering: Mark Law, Scott Thompson
• Georgia Tech– Electrical and Computer Engineering: John Cressler
• North Carolina State University– Physics: Gerry Lucovsky
• Rutgers University– Chemistry: Eric Garfunkel, Evgeni Gusev
Institute for Space and Defense Electronics
Resource to support national requirements in radiation effects analysis and rad-hard design
Bring academic resources/expertise and real-world engineering to bear on system-driven needs
ISDE provides:• Government and industry radiation-effects resource
– Modeling and simulation– Design support: rad models, hardening by design– Technology support: assessment, characterization
• Flexible staffing driven by project needs– Faculty– Graduate students– Professional, non-tenured engineering staff
Radiation Effects on Emerging Electronic Materials and Devices
• More changes in IC technology and materials in past five years than previous forty years– SiGe, SOI, strained Si, alternative dielectrics, new
metallization systems, ultra-small devices…
• Future space and defense systems require understanding radiation effects in advanced technologies– Changes in device geometry and materials affect
energy deposition, charge collection, circuit upset, parametric degradation…
Approach
• Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners
• First-principles quantum mechanical analysis of radiation-induced defects physically based engineering models
• Development and application of a fundamentally new multi-scale simulation approach
• Validation of simulation through experiments
Virtual Irradiation
• Fundamentally new approach for simulating radiation effects
• Applicable to all tasks
QuickTime™ and aTIFF (LZW) decompressor
are needed to see this picture.
Physically Based Simulation of Radiation Events
• High energy protons incident on advanced CMOS integrated circuit
• Interaction with metallization layers dramatically increases energy deposition
Device Description Radiation Events
Hierarchical Multi-Scale Analysis of Radiation Effects
Materials
Device Structure
Device Simulation Circuit Response
IC DesignEnergy
Deposition
Defect Models
Current Joint Program of ISDE/VU and CFDRC
Geant4- accurate model of radiation event
3D device simulation
n
e-
Blue = + ions
p
“Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials”
STTR Phase I Project, sponsored by NASA Ames (2005):
Program Objectives:
Couple Vanderbilt Geant4 and CFDRC NanoTCAD 3D Device Solver
Adaptive/dynamic 3D meshing for multiple ion tracks
Statistically meaningful runs on a massively parallel computing cluster
Integrated and automated interface of Geant4 and CFDRC NanoTCAD
0.13um NMOS, Vd = 1.2 V, Vg = 0V
Two different ion strikesPsub Contact / No-Contact
0.E+00
2.E-04
4.E-04
6.E-04
8.E-04
1.E-03
1.E-12 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06
Time (s)
Drain Current
(A)
ion strike C ion, LET=5.06, R=0.06umHe ion, LET=1.18, R=0.02um C ion, P-sub ContactHe ion, P-sub Contact
- Adaptive 3D meshing - 3D Nanoscale transport - Physics based
transient response
Research Plan
• Tasks defined and scheduled
Organization by Task
• Radiation response of new materials– NCSU, Rutgers, Vanderbilt
• Impact of new device technologies on radiation response– ASU, Florida, Georgia Tech, Vanderbilt
• Single-event effects in new technologies and ultra-small devices– Florida, Georgia Tech, Vanderbilt
• Displacement-damage and total-dose effects in ultra-small devices– ASU, Vanderbilt
Radiation Response of New Materials
• HfO2-based dielectrics and emerging high-k materials• Metal gates• Interface engineering (thickness & composition)• Hydrogen and nitrogen at SiON interfaces (NBTI)• Substrate engineering (strained Si, Si orientations,
Si/SiGe, SOI)• Defects in nanoscale devices• Energy deposition via Radsafe/MRED
Impact of new device technologies on radiation response
• SiGe HBTs• Strained Si CMOS• Ultra-small bulk CMOS• Mobility in ultra-thin film SOI MOSFETs• TID response in scaled SOI CMOS• Multiple gate/FinFET devices• Multi-scale hierarchical analysis of single-event effects
Single-event effects in new technologies and ultra-small devices
• Development/application of integrated simulation tool suite– Applications in all tasks
• Effects of passivation/metallization on SEE• Tensor-dependent transport for SEE• Extreme event analysis• Spatial and energy distribution of e-h pairs• Energy deposition in small device volumes
Displacement-damage and total-dose effects in ultra-small devices
• Physical models of displacement single events• Microdose/displacement SEE in SiGe and CMOS devices• Single-transistor defect characterization• Link energy deposition to defects through DFT molecular
dynamics • Multiple-device displacement events• Dielectric leakage/rupture
Collaborators
• IBM– SiGe, CMOS, metal gate,
high-k
• Intel– Strained Si and Ge
channels, tri-gate, high-k, metal gate
• Texas Instruments– CMOS
• Freescale– BiCMOS and SOI
• Jazz– SiGe
• National– SiGe
• SRC/Sematech– CMOS, metal gate, high-k,
FinFETs
• Sandia Labs– Alternative dielectrics,
thermally stimulated current
• NASA/DTRA– Radiation-effects testing
• Oak Ridge National Laboratory– Atomic-scale imaging
• CFDRC– Software development