RadHard device versus COTS • Radiation environment

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• RadHard device versus COTS• Radiation environment• Radiation effects• High reliability solutions• Tests overview• ASIC for Supply Current Control (SCC) • Future work

Summary


RadHard componentsJ Immune or resistant

to radiation effects

J Completely characterized

L No state of the art components

L Performance

L Power consumption

L Weight

L Availability

L Cost (up to 100 times)

COTS Commercial Off The Shelf L Characterization


PAMELASpace borne telescope for antimatter detection

Det

ecto

rs

Tel

emet

ry

OBDH

CPU&

DSPSSMM

4 Gbyte> 3 years lifeFile system based

50000 DAQ Ch


Radiation Environments


Solar MinimumShield = 2.54 mm(Al)

Radiation Environments


RADIATION EFFECTS

- SEE events triggered by a single ion strike

• Power consumption• Performance degradation• Functional failure

➥ Threshold voltage shifts➥ Leakage current increases

- TID long term degradation due to cumulative effects

➥ Soft Errors:

• Bit Upset (SEU)• Functional Interrupts (SEFI)

• Latchup (SEL)• Snapback (SES)• Burnout (SEB)

➥ Hard Errors:


SpaceSystems

System Level Qualification

Device Level QualificationExtended temperature rangeSpecial packagesRadiation Hardened Devices (RH)

Controlled atmosphere payloads Ruggedizer Architectural solutions to avoid failures

Thermal stressesMechanical stresses Radiation effects

Design Approach

• Error Correcting Code• Redundancy• Spare Parts• Self checking


Mitigation Approach

• TID Shield

Error Correction Code Parameter

Ground Test

CREME

• SEL Custom Solution Chip full-custom (SCC)

• SEU

LETTh

σPl

σ

LET

Orbit parameter


Negative Effects of Shielding

Device

dE/dx

x

Sensitive Zone

Device

Sensitive Zone

dE/dx

xShielding


Word DataWord (b*k)

ECCCodeWord (b*n), n>k

CW

r = (n - k)/2

Memory chips

SCC

SCC

SCC

Supply Current Controller

Module[j]

Module[0]

Module[1]

AEU

ECC

CU

SSMM Strutture


Digital Scope

BEAMLine

HOT ROOM COLD ROOM

Counter

CAMAC

GPIB

Test control & Pattern generator

Supply monitor& Bus CTRL

THPC

TEST SETUP

ADC

Beam monitor

TCPC


ReadoutElectronics

DU

T X

4SupplyControl

Results

Commands

Bus Control

Electronic SetupC

old

DU

T

8 bit Iddq Value

DUTsPositionControl

ADC&

Scaler

CAMAC Crate

GP

IB


Beam Characteristics

0 10 20 30 40 500.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

DU

T

SC

D

WIN

DO

W

AIRAIR

E[G

ev]

X[mm]0 20 40 60 80 100

0

20

40

60

80

100 DUT

LE

T [

Me

V/(

mg

/cm

2)]

X[um]

Ion E [MeV/AMU] LET(Si)

[MeV/(mg/cm2)]R(Si) [µm]

93Nb 30 21 390120Sn 30 30 370197Au 15 90 95


Normal Operations & Events B,C,D


SCC (Supply Current Controller)

Analog Full-Custom Circuit :• Detect anomalous current sink of digital IC• Make a Power-cycle to recover normal operations

• No customization required• No external threshold• No external component• No system signal required• Full differential architecture• Protection of several devices with a single SCC• Low Power architecture

SCC

Features:


Overview SDRAM Current Sink

RefreshStand-by Read SEL SEFI


AVERAGE

PEAK DET.

IN

OUT

DISCRIMINATOR

SCC Algorithm


CIRCUIT -TOP VIEW


Spectre Back-annotaded Simulation


VCG

“1” “0”

∆VT = -Q/C

ID

I1

I0

VrifVt1 Vt2

SUBSTRATO

SOURCE DRAIN

CONTROL-GATE

FLOATING-GATE

20nm

7-8nmSiO2

Struttura FlashE RW

WL1

WL2

WL3

BL1

BL2

0v

5v

0v

0v

0v

12v

0v

0v

0v

-8v

0v

5v

1v5vfloat

float 0v 0v

• Architettura NOR

• Singola alimentazione

• Carica Hot-Electron∆Vt = -Q/C

• Scarica FN-tunneling


SiO2SiO2

POLY-Si

Radiazione

P-SiPoly-Si

n+

- -

++

EE

SiO2 SiO2(3)

POLY-Si

Radiazione

P-SiPoly-Si

(1)

(2)

n++++

+++

+ +

- -E E

Particella ad alta energia

Ossido

Silicio

Nuovi stati diinterfaccia

Metallo

-+

+ + ++ +

Trappole per lacune

“0”

“1”

γ , TOTAL DOSE [ rad(Si) ]

Vth

, TH

RE

SHO

LD

VO

LT

AG

E [

V]

10

5

0

-5

-10

102 103 104 105

Effetti della TID nelle Flash


Flusso di Test

3 Memorie Flash da 16Mb (M28W160T)

• Read ciclica ( RD )

• Erase, Write, Read ciclica ( EWR )

• Non alimentato ( UNB )

Caratterizzazionepre-Test

Beam_Off

Operazioni diEraseWriteRead

Beam_On

Caratterizzazione

Sessioni di test:

1° sessione → 3 Krad2° sessione → 10 Krad3° sessione → 30 Krad

Annealing


Strumentazionenella camera fredda

Strumentazione nella camera di irraggiamento

Oscilloscopio

Flash

Test-Board

Setup di Test

Flash

Test-Board Protezione in

piombo

Sorgente

Flash

Vcc


-4,0µ -2,0µ 0,0 2,0µ 4,0µ 6,0µ 8,0µ

-5,0m

0,0

5,0m

10,0m

15,0m

20,0m

25,0m

RD_Read_0_3_10Krad RD_Read_30Krad

Cur

rent

Sup

ply

[A]

Time [s]

READ OPERATION


-20,0µ -10,0µ 0,0 10,0µ 20,0µ 30,0µ 40,0µ-20,0m

-10,0m

0,0

10,0m

20,0m

30,0m

40,0m

50,0m

RD_Erase_0_3_10Krad RD_Erase_30Krad

Cur

rent

Sup

ply

[A]

Time [s]

ERASE OPERATION


-20,0µ -10,0µ 0,0 10,0µ 20,0µ 30,0µ 40,0µ-20,0m

-10,0m

0,0

10,0m

20,0m

30,0m

40,0m

50,0m

RD_Write_0_3_10Krad RD_Write_30Krad

Cur

rent

Sup

ply

[A]

Time [s]

WRITE OPERATION


-20,0µ -10,0µ 0,0 10,0µ 20,0µ 30,0µ 40,0µ-10,0m

0,0

10,0m

20,0m

30,0m

40,0m

50,0m

60,0m

EWR_Erase_0_3_10Krad EWR_Erase_30Krad

Cur

rent

Sup

ply

[A]

Time [s]

ERASE OPERATION

Documents

RadHard device versus COTS • Radiation environment