May 2011 Doc ID 18222 Rev 2 1/16

16

STW60N65M5STFW60N65M5

N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFETin TO-247, TO-3PF

Features

■ Worldwide best RDS(on) * area amongst the silicon based devices

■ Higher VDSS rating

■ High dv/dt capability

■ Excellent switching performance

■ Easy to drive

■ 100% avalanche tested

ApplicationSwitching applications

DescriptionThe devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Figure 1. Internal schematic diagram

Order codesVDSS @ TJmax

RDS(on) max

ID

STFW60N65M5STW60N65M5

710 V < 0.059 Ω 46 A

12

3

TO-247 TO-3PF

1

111

23

Table 1. Device summary

Order codes Marking Package Packaging

STFW60N65M5

STW60N65M560N65M5

TO-3PF

TO-247Tube

www.st.com

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Contents STFW60N65M5, STW60N65M5

2/16 Doc ID 18222 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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STFW60N65M5, STW60N65M5 Electrical ratings

Doc ID 18222 Rev 2 3/16

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol ParameterValue

UnitTO-247 TO-3PF

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 46 A

ID Drain current (continuous) at TC = 100 °C 29 A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 184 A

PTOT Total dissipation at TC = 25 °C 255 79 W

IARAvalanche current, repetitive or not-repetitive (pulse width limited by Tj max)

12 A

EASSingle pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)1400 mJ

dv/dt (2)

2. ISD ≤ 46 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS

Peak diode recovery voltage slope 15 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc=25°C)

3500 V

Tstg Storage temperature - 55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol ParameterValue

UnitTO-247 TO-3PF

Rthj-case Thermal resistance junction-case max 0.49 1.58 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W

TlMaximum lead temperature for soldering purpose

300 °C

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Electrical characteristics STFW60N65M5, STW60N65M5

4/16 Doc ID 18222 Rev 2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0 650 V

IDSSZero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

1

100

µA

µA

IGSSGate-body leakage

current (VDS = 0)VGS = ± 25 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID = 23 A 0.049 0.059 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0-

6810

1416.2

-

pF

pFpF

Co(tr)(1)

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance time related

VDS = 0 to 520 V, VGS = 0

- 480 - pF

Co(er)(2)

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance energy related

- 140 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 1 - Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source chargeGate-drain charge

VDD = 520 V, ID = 23 A,

VGS = 10 V(see Figure 17)

-

139

3452

-

nC

nCnC

Obso

lete Product(s)

- Obso

lete Product(s)

STFW60N65M5, STW60N65M5 Electrical characteristics

Doc ID 18222 Rev 2 5/16

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td (v)

tr (v)tf (i)

tc(off)

Voltage delay time

Voltage rise timeCurrent fall time

Crossing time

VDD = 400 V, ID = 30 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 18)

(see Figure 21)

-

90

1113

16

-

ns

nsns

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

1. Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)-

46

184

A

A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 46 A, VGS = 0 - 1.5 V

trrQrr

IRRM

Reverse recovery timeReverse recovery charge

Reverse recovery current

ISD = 46 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 21)-

44810

45

nsµC

A

trrQrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 46 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 21)

-

534

14

52

ns

µC

A

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Electrical characteristics STFW60N65M5, STW60N65M5

6/16 Doc ID 18222 Rev 2

2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3FP Figure 3. Thermal impedance for TO-3FP

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

10µs

100µs

1ms10ms

Tj=150°C

Tc=25°CSingle pulse

AM09126v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

TO3PF

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms10ms

Tj=150°C

Tc=25°CSingle pulse

AM09127v1

ID

60

40

20

00 4 VDS(V)8

(A)

2 6 10

80

100

5.5V

6V

7V

7.5V

6.5V

12 14 16 18

120

140VGS=10V

AM09128v1ID

60

40

20

03 5 VGS(V)7

(A)

4 6 8

80

100

9

120

140VDS=20V

AM09129v1

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STFW60N65M5, STW60N65M5 Electrical characteristics

Doc ID 18222 Rev 2 7/16

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on resistance vs temperature

VGS

6

4

2

00 50 Qg(nC)

(V)

8

100 150

10

VDD=520VID=23A12

300

200

100

0

400

500

VDS

AM09130v1RDS(on)

0.049

0.047

0.045

0.0430 20 ID(A)

(Ω)

10 30

0.051

0.053

0.055

0.057 VGS=10V

40

AM09131v1

C

1000

100

10

10.1 10 VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

AM09132v1 Eoss

5

00 100 VDS(V)

(µJ)

400200 300

10

15

500 600

20

25

AM09133v1

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100 125

ID=250µA

AM09134v1 RDS(on)

1.9

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100 125

0.7

1.1

1.5

1.7

2.1ID=23A

AM09135v1

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Electrical characteristics STFW60N65M5, STW60N65M5

8/16 Doc ID 18222 Rev 2

Figure 14. Normalized BVDSS vs temperature Figure 15. Switching losses vs gate resistance(1)

1. Eon including reverse recovery of a SiC diode

BVDSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.93

0.95

0.97

0.99

1.01

1.03

125

1.05

1.07ID=1mA

AM09136v1 E

300

200

100

00 20 RG(Ω)

(μJ)

10 30

400

500

600

40

ID=30AVDD=400VVGS=10V

Eon

Eoff

700

800

AM09137v1

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STFW60N65M5, STW60N65M5 Test circuits

Doc ID 18222 Rev 2 9/16

3 Test circuits

Figure 16. Switching times test circuit for resistive load

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM05540v2

Id

Vgs

Vds

90%Vds

10%Id

90%Vgs on

Tdelay-off

TfallTrise

Tcross -over

10%Vds

90%Id

Vgs(I(t))

on

-off

TfallTrise

-

))

Concept waveform for Inductive Load Turn-off

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Package mechanical data STFW60N65M5, STW60N65M5

10/16 Doc ID 18222 Rev 2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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STFW60N65M5, STW60N65M5 Package mechanical data

Doc ID 18222 Rev 2 11/16

Table 8. TO-3PF mechanical data

Dim.mm

Min. Typ. Max.

A 5.30 5.70

C 2.80 3.20

D 3.10 3.50

D1 1.80 2.20

E 0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L 9.80 10 10.20

L2 22.80 23.20

L3 26.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15

N 1.80 2.20

R 3.80 4.20

Dia 3.40 3.80

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Package mechanical data STFW60N65M5, STW60N65M5

12/16 Doc ID 18222 Rev 2

Figure 22. TO-3PF drawing

L3

L

DiaL2

AC

D

D1

E

H

L5

L4

R

N

L6 L7

F(3x)

F2(3x)

G1

G

7627132_C

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STFW60N65M5, STW60N65M5 Package mechanical data

Doc ID 18222 Rev 2 13/16

Table 9. TO-247 mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.50

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Package mechanical data STFW60N65M5, STW60N65M5

14/16 Doc ID 18222 Rev 2

Figure 23. TO-247 drawing

0075325_F

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STFW60N65M5, STW60N65M5 Revision history

Doc ID 18222 Rev 2 15/16

5 Revision history

Table 10. Document revision history

Date Revision Changes

15-Nov-2010 1 First release.

05-May-2011 2 Document status promoted from preliminary data to datasheet.

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STFW60N65M5, STW60N65M5

16/16 Doc ID 18222 Rev 2

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