Quantum Transport :Atom to Transistor,What Makes Electrons Flow

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  • 8/8/2019 Quantum Transport :Atom to Transistor,What Makes Electrons Flow

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    Prof. Supriyo DattaECE 659Purdue University

    Network for Computational Nanotechnology

    01.15.2003

    Quantum Transport:Quantum Transport:Atom to Transistor

    Lecture 2: What Makes Electrons Flow?

    Ref. Chapter 1.2

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    Key Concepts: VD and VG Bias, Empty andfull energy levels, Threshold voltage VT, andFermi energy

    Basic Fermi function centered at E=0: f0(E)

    = 1/ (e E / kBT + 1). To get it centered at Ef, one

    could shift it in energy: f0(E-EF)

    0eV

    EF

    EC

    Vacuum Level

    EV

    Empty

    fo0 1

    E

    ID

    VGVT

    DRAIN

    SOURCE

    I

    VG VDGate

    INSULATOR

    CHANNEL

    L

    INSULATORz

    x

    Retouch on Concepts

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    At equilibrium, there is no bias voltage

    between the source and drain, the Fermi

    energy is fixed at the same level in source,channel and drain

    Very Important: The amount of currentflow does not depend on number of

    electrons. It is the amount of states around

    the Fermi energy that determines how

    much current flows.

    0eV

    EF

    EC

    Vacuum Level

    EV

    Empty

    f00 1

    E

    Pauli Exclusion Principle allows

    two electrons per energy level

    (one spin up and one spin down)

    Positive gate voltage lowers

    these levels and negative gate

    voltage raises them

    D

    RAIN

    S

    OURCE

    IVG VDGate

    INSULATOR

    CHANNEL

    L

    INSULATOR

    zx

    Retouch on Concepts

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    Consider a simple system with wide spacing of electron energy levels (a small

    molecule)

    4 electrons in the system considering spin up and down fill the first 2 energy

    levels. The Fermi energy is a level for which at T=0K the levels below it are full and the

    levels above it are empty. For our system at 0 K, the Fermi level will be half way

    between levels 2 and 3.

    09:22

    EF

    E4E3

    E2E1electrons

    The smaller the system, the more the

    spacing between the energy levels.

    The picks observed in the current are due to the

    overlap of energy levels and the Fermi level: As the gate

    voltage is applied these energy levels move up or down

    based on the sign of the voltage; hence they cross over the

    Fermi level and the result will be higher current because ofhigher availability of states at the Fermi energy.

    Band Diagram for aSimple Molecule

    ID

    VG

    Fixed Small

    VD

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    When VD is applied between the source and

    drain, system is driven out of equilibrium; theFermi energies in the source and drain will

    not be at the same level any more.

    Total energy difference between the two

    Fermi levels (chemical potentials) 1 and 2 is

    qVD. i.e. 1Vx q= 1eV= 1.6 x 10-19J

    The reason why the shift in

    Fermi levels is symmetric will

    be discussed later. For now

    consider the fact that division

    of voltage is very important for

    large bias but not so important

    for small bias which is in factthe case here.

    qV

    Vacuum Level

    1=Ef+ qVD/2

    2=Ef- qVD/2

    DRAIN

    SOURCE

    IVG VDGate

    INSULATOR

    CHANNEL

    L

    INSULATORz

    x

    D

    Away from Equilibrium

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    Why dont bottom and top levels contributeto current? Since we have two different Fermi

    levels, we have two different Fermi functions.

    Consider their value for high energies and for

    low energies; youll find that they have the

    same value of 0 (For high E) and 1 (For low

    E) - In other words, both contacts have the

    same agenda for these levels; hence nocurrent flow due to these levels.

    E

    2/1 DF qVE +=

    Vacuum Level0eV Top Levels

    Bottom Levels

    2/2 DF qVE =E

    If you do not have any

    levels between 1 and 2

    then current will not flow

    If you have a level between

    1 and 2 current will flow

    because left side (at )

    keeps filling up the level and

    right side (at ) keepsemptying it.

    1

    2

    Current Flow due toDifference in Agenda

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    What is the average number of

    electrons in the level ?

    N1: the average number ofelectrons that the leftcontact would

    like to see

    N1= 2f1 () = 2f0 ( - 1)

    N2: the average number of

    electrons that the rightcontact would

    like to see

    N2= 2f2 (

    ) = 2f0 (

    - 2)

    Note: factor of two is due to the fact thatwe can put two electrons of up and down

    spin in the same level.

    Vacuum Level

    1

    2

    0eV

    I1

    I2

    Average Number ofElectrons

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    N is the actual number of electrons at steady state in

    the channel

    Current from left side:

    Where is the rate at which electrons cross

    from 1 to . Current to right side:

    Where is the rate at which electrons cross

    from to 2 .

    So are in units of Joules

    Take , we have:

    Vacuum Level

    1

    2

    0eV

    I1

    I2

    )( 11

    1 NNqI =h

    h1

    )( 22

    2 NNqI =

    h

    h2

    sec1006.1

    2

    34 == Jh

    h

    21 +

    meV11 =

    sec10sec1006.110106.1

    12

    34

    319

    1

    =

    JJh

    Therefore, it takes

    ~1 pico second for

    electrons to escapeinto the channel

    Current Flow Left andRight

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    Equating I1 and I2 for a steady state solution we

    get

    Remember, in order for current to flow, f1 mustdiffer from f2 N-Type conduction: Go through a level that is

    empty at equilibrium

    P-Type conduction: Go through a level that is

    full at equilibrium

    Vacuum Level

    1

    2

    0eV

    I1

    I221

    2211

    +

    +=

    NNN

    )( 2121

    2121 NN

    qIII ===

    +

    h

    )]()([2

    21

    21

    21 ffq

    =+

    h

    Steady State Current

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    Use Taylor expansion to get an expression for current at

    small voltages: f1() = f0( - 1)

    f2

    () = f0

    ( - 2

    ) therefore:

    f1- f2 = (df0 / dE) (2 - 1)

    = -(df0 / dE) qVD

    Therefore for small voltages:

    Use E = -Efsince 1= Ef+ qVD/2 and 2= Ef qVD /2

    Vacuum Level

    1

    2

    0eV

    I1

    I2

    fEEdE

    dfqV

    =+

    0

    21

    21

    22

    h

    Note: , dimensions of conductance

    , dimensions of energy

    , dimensions of inverse energy

    h

    22q

    21

    21

    +

    fEEdEdf

    =

    0

    == + )]()([2

    21

    21

    21 ffq

    I

    h

    Current at Small Voltages

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    Peak 1/(4kBT) ; Width kBT Area

    = 1.

    As t0, it can be approximated as a

    delta function.

    What does look like?

    46:01

    Ef

    f01

    E E

    dE

    df0

    1/(4kBT)

    dE

    df 0 From the equation

    it would appear that there is no upper

    limit on the conductance

    However, this is not true. An upper

    limit does occur due to energybroadening. The maximum value ofconductance for one level device is:

    to be discussed in more detail next

    fEEdE

    dfqVI

    =+

    =

    0

    21

    21

    22

    h

    fEEdEdfq

    =+

    0

    21

    21

    2

    2h

    kS

    h

    q

    9.12

    14.772 2

    No Upper Limit?