Q&P Electronic Devices (2014)

7/22/2019 Q&P Electronic Devices (2014)

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Lu:

Mi sinh vin hy t trli cu hi v lm bi tp trc tip vo ti liu ny.Khng c sao chp bi gii ca ngi khc.

i vi phn cu hi trc nghim, SV lm bi chn mt phng n thch hpnht trong mi cu hi, bng cch khoanh trn hoc nh du vo u dngphng n c chn, v gii thch ngn gn vo phn trng bn cnh hocpha di mi cu hi. i vi cc bi tp, hy ghi li gii vo ngay phn trng tng ng mi bi tp.

Ti liu tham kho:Bi ging Cu kin in t. 2001 [ DQuang Bnh ].Electronic Devices. 2012 [Thomas L Floyd].Fundamentals of Linear Electronics Integrated and Dicrete, 1998 [James

Cox ].

Lin hkhi cn: Thy Bnh,0905894666,hoc:[email protected]

Thi hn hon thnh v np bi tp: (vo bui thi . . . . . . . . . . . )ti bm: K thut in t, khoa in t-Vin thng, Trng i hc BchKhoa, 54Nguyn Lng Bng, Q. Lin Chiu, Tp Nng.(Khng chp nhn schm tr).
mailto:[email protected]:[email protected]:[email protected]


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TM TT NI DUNG VVT LIU BN DN & DIODE

1-1. Tun theo m hnh c hc cin Bohr, nguyn tc xem nh c cu trc kiu-hhnhtinh vi cc quo in ttrn cc khong cch khc nhau xung quanh nhn trung tm.

Tun theo m hnh c hc lng t, cc in tkhng tn ti cc quo trn chnh xcnh cc ht c bn theo m hnh Bohr. Cc in tc thl sng hoc ht v nh vchnhxc ti thi im bt kl khng r rng.

Nhn ca nguyn tbao gm cc proton v cc neutron. Proton c in tch dng v neutronkhng mang in tch. Slng cc proton l snguyn tlng ca nguyn t.

Cc in tc in tch m v trn quo xung quanh nhn ti cc khong cch ty thucvo mc nng lng ca cc in t. Nguyn tc cc di nng lng gin on c gi lcc lpm trong l quo ca in t. Cu trc nguyn tcho php slng in tln nht trong mi lp no . trng thi tnhin ca n, tt ccc in tu trung havin tch do cc nguyn tc slng proton v electron bng nhau.

Lp hay di ngoi cng ca nguyn tc gi l di ha tr, nn cc in tc trn quodi ny c gi l cc in tha tr.Cc in tha trc mc nng lng cao nhttrong tt c cc mc nng lng trong nguyn t. Nu mt in t ha tr nhn nnglng tmt ngun nng lng bn ngoi chng hn nhit nng, th in tc thnhy rakhi di ha trv ri xa khi nguyn tca n.

1-2. Vt liu cch in c rt t cc in ttdo nn khng c dng in tt ccc iu kinthng thng.

Cc vt liu dn in c slng ln cc in ttdo nn dn dng in rt tt. Cc vt liu bn dn c dn in trong khong gia cc vt liu dn in v cch in. Cc nguyn tca cht bn dn c bn in tha tr. Silicon l vt liu bn dn c s

dng phbin nht. Cc nguyn tca cht bn dn lin kt vi nhau theo m hnh i xng to thnh vt liu

rn c gi l tinh th. Cc lin kt gitinh thvi nhau c gi l cc lin kt ng

ha tr.1-3. in tha trthot khi nh hng nguyn tgc c gi l in tdnhay in ttdo. Cc in t tdo c nng lng cao hn so vi cc in tdi ha tr, nn tdo dichuyn trong khp vt liu.

Khi mt in tthot khi nh hng ca nhn trnn tdo, in tsli mt ltrngtrong di ha trtc l to ra mt cp in t-ltrng. Cc cp in t-ltrng l c to rado nhit nng bi v in t nhn nng lng nhit tngoi thot khi nguyn tca n.

Mt in ttdo smt nng lng cui cng ri trli vo mt ltrng. iu ny cgi lsti hp. Cc cp in t-ltrng c to ra lin tc do nhit nn lun lun c ccin ttdo trong vt liu.

Khi t mt in p ngang qua mu vt liu bn dn, cc in ttdo c to ra do nhit dichuyn vpha u dng v to thnh dng in. y l mt loi dng in c gi ldng in do in t.

Mt loi dng in khc l dng in do l trng. Dng in ny xut hin khi cc in tha trdi chuyn khi ltrng to nn ltrng, trong thc tsdi chuyn ca cc ltrngtheo chiu ngc li.

1-4. Vt liu bn dn tp dng-nc to ra bng cch bsung cc nguyn ttp cht c nmin tha tr. Cc tp cht l cc nguyn tha trnm. Bn dn tp dng-pc to ra

bng cch bsung cc nguyn t tp cht chc ba in tha tr. Cc tp cht l ccnguyn tha trba.

Qu trnhbsung cc tp cht ha trnm hoc ha trba vo mt cht bn dn c gi lpha tp.

Cc ht ti in a strong vt liu bn dn tp dng-nl cc in ttdo c c bng qutrnh pha tp, v cc ht ti in thiu sl cc ltrng c to ra do nhit pht sinh cc cpin t-l trng. Cc ht ti in a s trong vt liu bn dn tp dng-p l cc l trng c


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c bi qu trnh pha tp, cn cc ht ti in thiu sl cc in ttdo c to ra donhit pht sinh cc cp in t-ltrng.

1-5. Tip gippnc hnh thnh khi mt phn vt liu c pha tp dng-nv mt phn vt liuc pha tp dng-p. Vng ngho sto thnh bt u ti tip gip tc l khng c cc htti in a s. Vng ngho c hnh thnh bi si-on ha.

i vi tip gip silicon thchn in hnh l 0,7 V v i vi diode germanium l 0,3 V.1-6. Dng in chy qua diode chkhi diode c phn cc thun. Xt theo l tng, khng c

dng in chy qua diode khi khng phn cc hoc phn cc ngc cho diode. Thc t, cdng in rt nhkhi diode c phn cc ngc do cc ht ti in thiu sc to ra binhit nng, nhng mc dng ngc rt nhnn thng c thbqua.

Snh thng thc l xy ra khi diode c phn cc ngc nu in p phn cc bng hocvt qu in p nh thng.

Diode sdn in khi c phn cc-thun v sngng dn khi c phn cc-ngc. in p nh thng ngc ca mt diode thng ln hn 50 V.

1-7. c tuyn V-Ithhin dng chy qua diode phthuc vo in p st trn diode. in trca diode khi c phn cc-thun c gi l in trng hay in trac. Dng ngc chy qua diode stng rt nhanh ti mc in p nh thng ngc. nh thng ngc cn phi trnh i vi phn ln diode.

1-8. M hnh l tng xem diode nh mt chuyn mch kn khi phn cc thun v nh mt hmch khi phn cc ngc. M hnh thc txem diode nh mt chuyn mch mc ni tip vi ngun thchn. M hnh y bao gm in trthun ng mc ni tip vi m hnh thc tkhi phn cc

thun v in trngc mc song song vi chuyn mch hkhi phn cc ngc.1-9. Ngun cung cp dc in hnh gm bin p, mch chnh lu bng diode, mch lc v bn

nh in p. Diode n trong mch chnh lu bn kkhi c phn cc-thun sdn trong khong 180

ca chu ktn hiu vo. Tn sca tn hiu ra mch chnh lu bn kbng tn stn hiu vo. in p ngc nh (PIV) l mc in p ln nht ngang qua diode khi phn cc ngc.

1-10. Mi diode trong mch chnh lu ton kkhi c phn cc-thun sdn trong khong 180ca chu ktn hiu vo

Tn sca tn hiu ra mch chnh lu ton kl gp hai ln tn stn hiu vo. Hai kiu mch chnh lu ton kc bn l mch cu v mch cun dy im gia. in p ra nh ca mch chnh lu ton kim gia xp x bng mt na in p thcp

nh ton btrst p ca mt diode. PIV ca mi diode trong mch chnh lu ton kim gia l gp hai ln in p ra nh

cng vi mc st p trn mt diode. in p ra nh ca mch chnh lu cu bng in p thcp nh ton btrst p trn hai

diode.

PIV ca mi diode trong mch chnh lu cu xp x bng mt na in p i vi cu hnhim gia tng ng v bng in p ra nh cng vi mc st p trn mt diode.

1-11. Blc u vo bng tscung cp mc in p ra dc xp x bng mc nh ca in p pvo c chnh lu.

in p gn c pht sinh do snp v x ca tlc. Lc tt hn khi mc in p gn nhhn. Sn nh in p ra trn mt khong in p vo c gi l n nh u vohay n nh

ngun cung cp. Sn nh in p ra trn mt khong dng ti c gi l n nh ti.

1-12. Bxn hay mch hn bng diode chsct in p cao hn hay thp hn cc mc cquy nh.

Bghim bng diode bsung mc dc i vi in p ac.1-13. Cc bnhn p c sdng trong cc ng dng in p-cao, dng-thp chng hn nh dnggia tc chm tia in ttrong ng tia (CRT) v dng gia tc ht c bn.

nhn p sdng hng lot cc tng diode-tin. in p t vo c thc nhn i, nhn ba, hoc nhn 4.


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1-14. Trang sliu (datasheet) cho bit thng tin chnh vcc thng sv cc c tuyn ca mtcu kin in t.

Diode cn phi lun lun lm vic di cc thng sln nht xc thc c quy nh trangsliu.

1.15. Nhiu DMM cho chc nng o thdiode. DMM hin thst p ca diode khi diode lm vic ng phn cc thun. Phn ln cc DMM chthOL khi diode hmch.

Xl scl p dng suy xt hp l kt hp vi kin thc y vmch hoc hthng nhn dng v sa cha sai hng. Xl scl qu trnh ba-bc gm phn tch, c lp v o. Phn tch li l c lp h hng cho mt mch cthhay mt phn ca mch.

1.16. Diode n p [zener] hot ng vng nh thng ngc. C hai c chnh thng diode n p: l nh thng thc l v nh thng zener. Khi 6,3 VZV nh thng zener chim u th.

Khi 6,3 VZV nh thng thc chim u th.

Diode n p sduy tr in p gn nh khng i trn hai in cc ca n trong khong dngin zener quy nh.

Diode n p c sn nhiu cp in p tdi 1 V n trn 250 V.1.17. Diode n p c sdng lm cc ngun in p chun, cc n p, v cc bhn ch.1.18. Diode bin dung [varactor] hot ng nh mt tthay i trng thi phn cc-ngc.

in dung ca varactor bin thin tlnghch vi in p phn cc-ngc. Diode n nh dng sduy tr dng thun ca n ti gi trkhng i c quy nh.

1.19. Diode pht quang [LED] spht ra nh sng khi c phn cc-thun. Cc LED c sn pht ra hng ngoi hoc nh sng nhn thy. Cc LED cng sng-cao c s dng trong cc b hin th mn hnh-ln, n giao

thng, n chiu sng -t v n chiu sng trong nh. LED hu c [OLED] sdng hai hay ba lp vt liu hu c to ra nh sng. Cc im lng tl cc cu kin bn dn pht ra nh sng khi c cung cp nng lng t

ngun bn ngoi. Photodiode biu hin stng ln vdng ngc theo cng chiu sng.1.20. Diode Schottky c tip gip kim loi-bn dn. Diode Schottky c sdng trong cc ng

dng tc chuyn mch-cao. Diode tunnel c sdng trong cc mch dao ng. Diodepinc vng bn dn tp-p, vng bn dn tp-n, v vng bn dn nguyn cht (i) nn s

biu hin c tnh ca in trbin thin khi c phn cc-thun v in dung khng ikhi c phn cc-ngc.

Diode laser tng tLED ngoi trdiode laser pht ra nh sng kt hp (bc sng n) khidng thun vt qu gi trngng.


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1-1. Slng in tln nht trong mt lp bt k: 22eN n

1-2. Dng thun theo m hnh l tng ca diode: BIASFLIMIT

VI

R

1-3. Dng thun theo m hnh thc tca diode: BIAS FFLIMIT

V VI

R

1-4. Gi trtrung bnh ca in p ra mch chnh lu bn k: AVGpV

V 1-5. in p ra nh ca chnh lu bn k(silicon): ( ) ( ) - 0,7 Vp out p inV V

1-6. in p ngc nh mch chnh lu bn k: ( )PIV p inV

1-7. Gi trtrung bnh ca in p chnh lu ton k:AVG

2p

VV

1-8. in p ra ca chnh lu ton kim gia: - 0,7 V2

secout

VV

1-9. in p ngc nh mch chnh lu ton kim gia: ( )PIV 2 + 0,7 Vp outV

1-10. in p ra ca chnh lu cu ton k: ( ) ( ) - 1,4 Vp out p secV V

1-11. in p ngc nh mch chnh lu cu ton k: ( )PIV + 0,7 Vp outV

1-12. Hsgn: ( )

DC

r ppVr

V

1-13. in p gn nh-nh khi c tlc u vo:( ) ( )

1r pp p rect

L

V VfR C

1-14. in p ra DC khi c tlc u vo:DC ( )

11

2 p rect

L

V VfR C

1-15. n nh ngun: OUTIN

Line regulation 100%VV

1-16. n nh ti: NL FL

FL

Load regulation 100%V V

V

1-17. Trkhng ca Zener:Z

ZZ

VZ

I

1-18. thay i ca ZV khi TCtnh theo %/C: Z ZZ V TC T

1-19. thay i ca ZV khi TCtnh theo mV/C: ZZ TC T


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Cu hi vvt liu bn dn v diode

1. Mi nguyn t bit u c(a)kiu cc nguyn tng nht; (b)slng cc nguyn tnh nhau;(c)kiu nguyn tduy nht; (d)nhiu kiu nguyn tkhc nhau.

2. Mt nguyn tbao gm(a)mt nhn v chmt in t; (b)mt nhn v mt hoc nhiu in t;(c)cc proton, cc in t, v cc neutron; (d)c(b) v (c).

3. Nhn ca mt nguyn tc to thnh bi(a)cc proton v cc neutron; (b)cc in t;(c)cc in tv cc proton; (d)cc in tv cc neutron.

4. in tha trc(a)quo gn nhn nht; (b)quo xa nhn nht;(c)cc quo khc nhau xung quanh nhn; (d) khng lin quan vi nguyn tring bit.

5. I-on dng c to thnh khi(a)mt in tha trthot ra xa khi nguyn t;(b)c nhiu ltrng hn so vi in tquo ngoi cng;(c)hai nguyn tlin kt vi nhau;(d)mt nguyn tnhn thm mt in tha tr.

6. Vt liu bn dn c sdng phbin nht trong cc cu kin in tl(a)germanium; (b)carbon; (c)copper; (d)silic.

7. Skhc nhau gia cht cch in v cht bn dn l(a)khe nng lng gia di ha trv di dn rng hn; (b)slng in ttdo;(c)cu trc nguyn t; (d)c(a), (b), v (c).

8. Di nng lng m trong cc in ttdo tn ti l(a)di thnht; (b)di thhai; (c)di dn; (d)di ha tr.

9. Trong tinh thbn dn, cc nguyn tc lin kt vi nhau do(a)stng tc ca cc in tha tr; (b)cc lc hp dn;(c)cc lin kt ng ha tr; (d)c(a), (b), v (c).

10. Snguyn tlng ca silicon l(a)8; (b)2; (c)4; (d)14.

11. Snguyn tlng ca germanium l(a)8; (b)2; (c)4; (d)32.

12. Lp ha trmt nguyn tsilicon c sthtl(a)0; (b)1; (c)2; (d)3.


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13. Mi nguyn ttrong tinh thsilicon c(a)bn in tha tr; (b)bn in ttrong di dn;(c)tm in tha tr, 4 in tca chnh nguyn t v 4 in tc gp chung;(d)khng c cc in tha trdo tt cin tc gp chung vi cc nguyn tkhc.

14. Cc cp in t- ltrng c to thnh bi

(a)sti hp; (b)nng lng nhit; (c)sion ha; (d)spha tp.

15. C sti hp khi(a)mt in tri vo mt ltrng; (b)mt ion dng v mt ion m lin kt vi nhau;(c)in tdi ha trtrthnh in tdi dn; (d)mt tinh thc hnh thnh.

16. Dng in trong cc cht bn dn c to ra bi(a)chdo cc in t; (b)chdo cc ltrng;(c)cc i-on m; (d) ccc in tv cc ltrng.

17. Trong cht bn dn thun (c bn)(a)khng c cc in ttdo; (b)cc in ttdo c to ra do nhit; (c)chc cc ltrng;(d)c bao nhiu in tsc by nhiu ltrng; (e)gm c(b) v (d).

18. Qu trnh bsung tp cht vo cht bn dn thun gi l(a)spha tp; (b)sti hp; (c)sbin i nguyn t; (d)sion ha.

19. Tp cht ha tr3 c bsung vo silicon to thnh(a)germanium; (b)cht bn dn tp dng-p; (c)cht bn dn tp dng-n; (d)vng ngho.

20. Chc nngca tp cht ha tr5 l (a)lm gim dn in ca silicon; (b)tng slng ltrng;(c)lm tng slng cc in ttdo; (d)to ra cc ht ti in thiu s.

21. Cc ht ti in a strong bn dn tp dng-nl(a)cc ltrng; (b)cc in tha tr; (c)cc in ttrong di dn; (d)cc proton.

22. Cc ltrng trong bn dn tp dng-nl(a)ht ti in thiu sc to ra do nhit;(b)ht ti in thiu sc to ra do pha tp;(c)cc ht ti in a sc to ra do nhit;(d)cc ht ti in a sc to ra do pha tp.

23. Tip gippnc to thnh do(a)sti hp ca cc in tv ltrng; (b)si-on ha;(c)bin gii ca vt liu dng-pv dng-n; (d)sva chm ca mt proton v mt neutron.


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24. Vng ngho c to ra do(a)si-on ha; (b)skhuych tn; (c)sti hp; (d)gm c(a), (b), v (c).

25. Vng ngho gm(a)vng khng c g cngoi cc ht ti in thiu s; (b)cc i-on dng v m;(c)khng c cc ht ti in a s; (d)c(b) v (c).

26. Thut ngphn cc [bias] c ngha l(a)tsca ht ti in a si vi ht ti in thiu s;(b)mc dng in chy qua diode;(c)mc in p dc t vo iu khin shot ng ca mt cu kin;(d)ngoi cc phng n trn.

27. phn cc thun mt diode(a)in p ngoi t vo l dng ti anode v m ti cathode;(b)in p ngoi t vo l m ti anode v dng ti cathode;

(c)in p ngoi t vo l dng ti vngpv m ti vng n;(d)c(a) v (c).

28. Khi mt diode c phn cc thun,(a)dng in duy nht l dng ltrng; (b)dng in duy nht l dng in t;(c)dng in duy nht l c to ra do cc ht ti in a s;(d)dng in c to ra do ccc ltrng v cc in t.

29. Mc d dng in bngng khi phn cc ngc,

(a)nhng c mt mc dng in no do cc ht ti in a s;(b)nhng c mt mc dng in rt nhdo cc ht ti in thiu s;(c)nhng c dng do nh thng thc.

30. i vi mt diode silicon, trsca in p phn cc thun in hnh(a)cn phi ln hn 0,3V; (b)cn phi ln hn 0,7V;(c)ty thuc vo rng ca vng ngho; (d)phthuc vo nng ca ht ti in a s.

31. Khi c phn cc thun, diode s

(a)ngng dn; (b)dn dng; (c)c in trcao; (d)st gim mc in p ln.

32. Mt diode thng lm vic (a)vng nh thng ngc; (b)vng phn cc-thun;(c)vng phn cc-ngc; (d)hoc (b) hoc (c).

33. in trng c thquan trng khi diode(a)c phn cc ngc; (b)c phn cc-thun;

(c)vng nh thng-ngc; (d)cha c phn cc.


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34. c tuynI-Vca diode thhin(a)in p ngang qua diode theo mc dng cho;(b)mc dng in theo mc in p phn cc cho;(c)tiu tn cng sut; (d)ngoi cc phng n trn.

35. Xt mt cch l tng, mt diode c thc tng ng vi mt

(a)ngun in p; (b)in tr; (c)chuyn mch; (d)tt ccc phn ttrn.

36. M hnh diode thc tl(a)mc thro c a vo tnh ton; (b)gi trin trng c a vo tnh ton;(c)ngoi hai trng hp (a) v (b); (d)c(a) v (b).

37. Trong m hnh diode y ,(a)mc thro c a vo tnh ton; (b)trsin trng thun c a vo tnh ton;(c)trsin trngc c a vo tnh ton; (d)tt ccc thng strn.

38. Gi trtrung bnh ca in p chnh lu bn kvi trsnh 200 V l(a)63,7 V; (b)127,2 V; (c)141 V; (d)0 V.

39. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu bn k, tn stn hiu ra l(a)120 Hz; (b)30 Hz; (c)60 Hz; (d)0 Hz.

40. Gi trnh ca in p ti u vo ca mch chnh lu bn kl 10 V. Gi trnh gn ng cain p ti u ra l(a)10 V; (b)3,18 V; (c)10,7 V; (d)9,3 V.

41. i vi mch cu hi 40, diode cn phi c khnng chu in p ngc l(a)10 V; (b)5 V; (c)20V; (d)3,18 V.

42. Gi trtrung bnh ca in p c chnh lu ton kvi trsnh 75 V l(a)53 V; (b)47,8 V; (c)37,5 V; (d)23,9 V.

43. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu ton k, tn stn hiu ra l(a)120 Hz; (b)60 Hz; (c)240 Hz; (d)0 Hz.

44. in p thcp ton bmch chnh lu ton kim-gia l 125 V rms. Bqua st p ca

diode, in p ra hiu dng (V rms) l(a)125 V; (b)177 V; (c)100 V; (d)62,5 V.


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45. Khi in p ra nh l 100 V, trsin p ngc nh (PIV) cn phi c cho mi diode trongmch chnh lu ton kim gia l (bqua st p ca diode)(a)100 V; (b)200 V; (c)141 V; (d)50 V.

46. Khi in p ra hiu dng (rms) ca mch chnh lu cu ton k l 20 V, in p ngc nhngang qua cc diode l (bqua st p trn diode)

(a)20 V; (b)40 V; (c)28,3 V; (d)56,6 V.

47. in p ra dc l tng ca mch lc u vo bng tsbng vi(a)gi trnh ca in p c chnh lu;(b)gi trtrung bnh ca in p c chnh lu;(c)gi trhiu dng ca in p c chnh lu.

48. Mt blc ngun cung cp cho in p ra c gn l 100 mV nh-nh v gi trdc l 20 V?.Hsgn l

(a)0,05; (b)0,005; (c)0,00005; (d)0,02.

49. in p c chnh lu ton knh l 60 V t vo mch lc u vo bng t. Nuf= 120Hz; =10 kLR , v =10 FC , in p gn l

(a)0,6 V; (b)6 mV; (c)5,0 V; (d)2,88 V.

50. Nu gim in trti ca bchnh lu ton kc lc bng t, th in p gn(a)stng ln; (b)sgim xung; (c)khng nh hng; (d)c tn skhc.

51. n nh theo in p ngun c xc nh bng(a)dng ti; (b)dng zener v dng ti;(c)thay i in trti v in p ra; (d)thay i in p ra v in p vo.

52. n nh theo ti c xc nh bng(a)cc thay i dng ti v in p vo; (b)cc thay i dng ti v in p ra;(c)cc thay i in trti v in p vo;(d)cc thay i dng zener v dng ti.

53. t in p sinusoidal 10 Vnh-nh vo mch diode silicon v in trmc ni tip. Trsinp ln nht ngang qua diode l(a)9,3 V; (b)5 V; (c)0,7 V; (d)4,3 V.

54. Trong mch xn c phn cc, in p phn cc l 5 V v in p vo l dng sin 10 V nh. Nucc tnh dng ca in p phn cc c ni vi cathode ca diode, th in p ti anode l(a)10 V; (b)5 V; (c)5,7 V; (d)0,7 V.

55. Trong mch ghim p dng, in p t vo u vo l dng sin 120 V rms. Gi trca in p dcu ra l(a)119,3 V; (b)169 V; (c)60 V; (d)75,6 V.


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56. in p u vo ca bnhn i in p l 120 V rms. Gi trgn ngca in p ra nh-nhl

(a)240 V; (b)60 V; (c)167 V; (d)339 V.

57. Nu in p u vo ca bnhn ba in p c gi trhiu dng l 12 V, Gi trin p ra dc gnng l

(a)36 V; (b)50,9 V; (c)33,9 V; (d)32,4 V.

58. Khi mt diode silicon hot ng ng phn cc thun, DMM chc nng o thdiode schth(a)0 V; (b)OL; (c)xp x 0,7 V; (d)xp x 0,3V.

59. Khi mt diode silicon bhmch, DMM thng thng schth(a)0 V; (b)OL; (c)xp x 0,7 V; (d)xp x 0,3 V.

60. Trong mt mch chnh lu, nu cun dy thcp ca bin p hmch, th in p ra l(a)0 V; (b)120 V; (c)thp hn nh mc; (d)khng nh hng.

61. Nu mt trong cc diode trong mch chnh lu cu ton kbhmch, th in p ra l(a)0 V; (b)mt phn t bin ca in p vo;(c)bng in p chnh lu bn k; (d)in p 120 Hz.

62. Khi kim tra mt mch chnh lu cu ton k60 Hz cho thy tn hiu ra c gn 60 Hz,(a)mch hot ng bnh thng; (b)c mt diode bhmch;(c)cun thcp ca bin p bngn mch; (d)tlc br.

63. Khi t voltmeter ngang qua diode c phn cc thun, th voltmeter schthmc in p xpx bng vi(a)mc in p ca ngun pin phn cc; (b)0V;(c)thro ca diode; (d)in p ca ton bmch.

64. Mt diode silicon mc ni tip vi in tr1,0kv mt ngun pin 5V. Nu anode c mcvi cc dng ca ngun pin, in p cathode so vi u m ca ngun pin l(a)0,7V; (b)0,3V; (c)5,7V; (d)4,3V.

65. u que o dng ca ng ho in tr[ohmmeter] c kt ni vi anode ca diode cn uque m l kt ni vi cathode. Diode l(a)c phn cc ngc; (b)hmch; (c); c phn cc thun(d)bhng; (e)gm c(b) v (d).

66. Cathode ca diode zener mc trong bn nh in p thng l(a)dng hn so vi anode; (b)m hn so vi anode;(c) mc in p + 0,7V; (d)c ni t.


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67. Nu mt diode zener c in p zener l 3,6V th diode zener slm vic (a)vng nh thng c n inh; (b)vng nh thng zener;(c) vng dn thun; (d)vng nh thng thc.

68. Mt diode zener 12V, thay i dng zener 10mA s to ra thay i in p zener l0,1V. Trkhng ca zener tng ng vi khong dng trn l

(a)1; (b)100; (c) 10; (d)0,1.

69. Sliu ca mt diode zener cho l VZ= 10V o ti mc dngIZT= 500mA.ZZtng ng l(a)50; (b)20; (c) 10; (d)cha bit.

70. Trng thi khng-ti c ngha l(a)ti c in trv cng; (b)ti c in trbng khng;(c) cc u ra l hmch; (d)gm c(a) v (c).

71. Diode bin dung biu hin(a)in dung c ththay i ty thuc vo in p ngc;(b)in trc ththay i ty thuc vo in p ngc;(c) in dung c ththay i ty thuc vo in p thun;(d)in dung khng i trong khong in p ngc.

72. Diode pht quang - LED(a)spht sng khi c phn cc ngc; (b)snhy cm vi nh sng khi phn cc ngc;(c) spht sng khi c phn cc thun; (d)hot ng nh mt bin tr.

73. LED hng ngoi so vi LED thy c l(a)to ra nh sng c bc sng ngn hn; (b)to ra nh sng tt ccc bc sng;(c) to ra chmt mu ca nh sng; (d)to ra nh sng c bc sng di hn.

74. So vi cc n si t, LED cng sng-cao l(a)sng hn; (b)bn hn; (c) sdng ngun thp hn;(d)tt ccc c tnh trn.

75. OLED khc vi LED thng thng c tnh l OLED(a)khng cn in p phn cc; (b)c cc lp vt liu hu c thay cho tip gippn;(c) c ththc hin c khi sdng qu trnh in phun; (d)c(b) v (c).

76. LED hng ngoi c ghp quang vi photodiode. Khi LED tt, th chthtrn ng ho dngmc ni tip vi photodiode c phn cc-ngc sl(a)khng thay i; (b)gim xung; (c) tng ln; (d)dao ng .

77. in trni ca quang diode - photodiode

(a)stng ln theo cng nh sng khi c phn cc-ngc;(b)sgim xung theo cng nh sng khi c phn cc-ngc;(c) stng ln theo cng nh sng khi c phn cc-thun;(d)sgim xung theo cng nh sng khi c phn cc-thun.


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78. Diode laser sto ra(a)nh sng khng kt hp; (b)nh sng kt hp;(c) nh sng n sc; (d)c(b) v (c).

79. Diode c c tnh in trm l(a)diode Schottky; (b)diode tunnel; (c) diode laser;(d)diode ht ti nng [hot-carrier diode].

80. cho mt hthng hot ng ng chc nng, th cc loi mch khc nhau to nn hthngcn phi(a)c phn cc ng; (b)c kt ni ng; (c) c giao tip ng;(d) tt ccc phng n trn; (e)gm c(a) v (b).


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BI TP

BI TP C BN

Mc 1-1 Cu trc nguyn t

1. Nu snguyn tca mt nguyn ttrung ha l 6, th c bao nhiu in tc trong nguyn t?

proton l bao nhiu?.

2. Slng in tln nht l bao nhiu c thc lp th3 ca mt nguyn t?

Mc 1-2 Vt liu sdng trong cu kin in t

3. Vi mi gin nng lng hnh 1.40, hy xc nh loi vt liu da trn cc so snh tngi.

4. Mt nguyn tc 4 in tha tr. Kiu nguyn tl thuc loi vt liu no?

5. Trong tinh thsilicon, mu nguyn tn thc hin bao nhiu lin kt ng ha tr?

Mc 1-3 Dng in trong cc cht bn dn

6. iu g xy ra khi gia tngnhit vo silicon?

7. Tn gi hai vng nng lng m trong dng in sc to ra trong cht bn dn?

Mc 1-4 Cc cht bn dn tp dng-Nv dng-P

8. Hy m tqu trnh pha tp v gii thch qu trnh pha tp bin i cu trc nguyn tca silicon

nh thno?


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9. Nguyn t antimony c bao nhiu in tha tr, c thsdng lm g trong chto cht bndn? Nguyn t boron c bao nhiu in tha tr, c thsdng lm g trong chto cht

bn dn?

Mc 1-5 Tip gip PN

10. in trng tip gippnc to ra nh thno?

11. Do c thchn [barrier potential], diode c thc dng lm ngun in p c khng? Giithch.

Mc 1-6 Hot ng ca diode

12. diode c phn cc thun, cn phi mc u dng ca ngun in p n vng bn dn noca tip gip?

13. Hy gii thch ti sao cn phi c in trmc ni tip khi diode c phn cc thun.

Mc 1-7 c tuyn Dng-Ap ca diode

14. Gii thch cch to ra phn c tuyn phn cc thun ca diode nh thno?

15. Bng cch no c thlm cho ro thgim t0,7V xung 0,6V?

Mc 1-8 Cc m hnh ca diode

16. Hy xc nh mi diode mch hnh 1.41, l c phn cc thun hay phn cc ngc.

17. Hy xc nh in p trn mi diode mch hnh 1.41, theo m hnh thc tca diode.


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18. Hy xc nh in p trn mi diode mch hnh 1.41, bng m hnh diode l tng

19. Hy xc nh in p trn mi diode mch hnh 1.41, s dng m hnh diode y c10 dr' v 100 MRr' .

Mc 1-10 Chnh lu bn k

20. Hy vdng sng v ghi trsca in p ra cho mi mch hnh 2.68.

21. in p ngc nh trn mi diode hnh 2.68 l bao nhiu?.

22. Tnh gi trtrung bnh ca in p ca in p c chnh lu bn kvi gi trin p nh l200 V.

23. Tnh gi trtrung bnh ca in p ca in p c chnh lu bn kc gi trin p nh l200 V.

24. Gi trdng thun nh chy qua mi diode mch hnh 2.68, l bao nhiu?

25. Bin p ngun cung cp c tsvng dy l 5:1. in p thcp l bao nhiu nu cun dy scp c ni vi ngun 120 V rms?

26. Xc nh mc cng

sut nh v trungbnh c phn bn RL mch hnh2.69.


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Mc 1-11 Mch chnh lu ton k

27. Tnh trtrung bnh cho mi in p ghi hnh 2.70.

28. Xt mch hnh 2.71.(a)Kiu mch ny l mch g?

(b)in p nh thcp ton bl bao nhiu?

(c)Tnh in p nh trn mi na cun dy thcp.

(d)Vdng sng in p trnRL.

(e)Mc dng nh chy qua mi diode l bao nhiu?

(f)PIV ca mi diode trong mch l bao nhiu?

29. Tnh in p nh trn mi na ca bin p imgia cun dy c dng trong bchnh lu tonkc mc in p ra trung bnh l 120V.

30. Hy trnh by cch mc cc diode b chnh luim gia nh thno to ra in p ton kmtrn in trti.

31. Thng sPIV cn phi c l bao nhiu cc diode trong mch chnh lu cu to ra mc in pra trung bnh l 50V?

32. in p ra ca mch chnh lu cu l 20V. Mc in p ngc nh trn cc diode l bao nhiu?

33. Vdng sng in p ra ca mch chnh lu cu hnh 2.72. Lu l ton bdiode c ongc so vi cc mch trc y.


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Mc 1-12 Mch lc ngun cung cp vn nh in p

34. Mch lc ca bchnh lu cung cp in p ra dc l 75V vi in p gn nh-nh l 0,5V. Tnhhsgn.

35. Mch chnh lu ton kc mc in p ra nh l 30V. Blc u vo bng t50 F scmc vi bchnh lu. Tnh mc gn nh-nh v mc in p ra dc trn in trti 600.

36. Mc gn theo phn trm ca mch lc chnhlu bi tp 35 l bao nhiu?

37. Trsca tlc cn phi c l bao nhiu cho hsgn 1% ca bchnh lu ton kc intrti l 1,5k? Cho bit bchnh lu cung cp mc in p ra nh l 18V.

38. Mch chnh lu ton kc mc in p chnh lu nh l 80V tngun ac 60Hz. Sdng tlc10F, xc nh hsgn vi in trti l 10k.

39. Tnh mc gn nh-nh v mc in p ra dcmch hnh 2.73. Bin p c thng sin pthcp l 36 V rms, v in p ngun in ctn s60Hz.

40. Xt mch hnh 2.73, v vdng sng in ptheo quan h vi in p vo: VAB, VAD, vVCD.

41. Nu in p ra khng ti ca bn nh inp l 15,5V v in p ra y ti l 14,9V, thn nh ti theo phn trm l bao nhiu?

42. Cho bn nh in p c n nh ti theophn trm l 0,5%. Mc in p ra y ti lbao nhiu nu mc in p ra khng ti l12,0V?.


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Mc 1-13 Cc mch hn chv mch ghim bng diode

43. Hy xc nh dng sng ra cho mchhnh 2.74.

44. Hy xc nh in p ra cho mch hnh 2.75(a) tng ng vi mi inp vo hnh 2.75(b), (c), v (d).

45. Hy xc nh dng sng ca in p ra cho mch hnh 2.76.


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46. Hy xc nh dng sng cain p trn ti RL cho mimch hnh 2.77.

47. Hy vdng sng ca in p ra cho mi mch hnh 2.78.

48. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.79.


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49. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.80. Cho bit hng sthi gianRCl ln hn nhiu so vi chu kca tn hiu vo.

50. Lp li bi tp 49 vi cc diode c mc xoay ngc chiu.

Mc 1-14 Mch nhn p

51. Mt mch bi p c in p uvo l 20 Vrms. Mc in p ura l bao nhiu? Hy vmch, chth ti cc u ra v thng sPIVca diode.

52. Lp li bi tp 51 cho b nhn 3in p v bnhn 4 in p.

Mc 1-15 Thng sca diode

53. Ttrang sliu hnh 2.55, hy xc nh in p ngc nh l bao nhiu m diode 1N183A cthchu ng c.


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54. Lp li nh bi tp 53 cho diode 1N188A.

55. Nu in p ra nh ca mch chnh lu cu ton kl 50V, xc nh trsnhnht ca in trhn chxung gn cn thit khi sdng diode 1N183A.

Mc 1-16 Sai hng trong mch diode

56. Nu 1 trong scc diode bchnh lu cu bhmch, th in p ra snh thno?


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57. Tcc schthtrn ng ho mch hnh 2.81, hy xc nh xem bchnh lu ang hotng bnh thng khng? Nu khng bnh thng, xc nh h hng c thdxy ra nht.

58. Hnh 2.82, l thhin dng sng in p ra ca cc mch chnh lu khc nhau hin thtrn myhin sng. Theo mi trng hp, hy xc nh mch chnh lu c hot ng ng chc nngkhng v nu khng ng chc nng th hy xc nh h hng c thdxy ra nht.

59. Cn c vo cc gi tr (ghitrong mch)ca cu kin

cho, mch hnh 2.83 c thh hng khng? Nu nh vyth ti sao?


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60. Xem cc schthtrn ng ho trong mi mch hnh 1.42, v xc nh diode no ng chcnng, hay diode no hmch hoc bngn mch. Gism hnh l tng.

61. Hy xc nh in p so vit ti tng im o trongmch hnh 1.43. Gismhnh diode thc t.

62. Hy xc nh sai hng c thdxy ra nht trong bng mch hnh 2.84 theo mi hin trngdi y. Trng thi hot ng lin quan cn phi ly theo tng trng hp. Bin p c mc inp ra nh mc l 36V.

(a)Khng o c in p tim o 1 i vi im o 2.(b)Khng c in p tim 3 i vi im o 4, 110V rms o gia im o 1 v im o 2.

(c)50V tim o 3 i vi im o4. in p vo ng mc 110Vrms.

(d) 25V t im o 3 i vi imo 4. in p vo ng mc110V rms.

(e) in p chnh lu ton k c mcnh khong 50V ti im o 7 so vi t.

(f) in p gn 120Hz cao ti im o 7.

(g)in p gn c tn s60Hz ti im o 7.

(h)Khng c in p ti im o 7.


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63. Khi o thbng mch ngun cung cp hnh 2.84 c mc in trti 10k, o in p ti udng ca t lc c in p gn 60Hz. Thay ton bdiode, cm phch in ngun vo bngmch, v o li im o kim chng hot ng c ng khng v thy rng in p o vn cin p gn 60Hz. Sai hng lc ny l g?

64. Nu diode pha trn cng bng mch hnh 2.84, lp sai bo ngc, th in p c thoc ti im o 8 l bao nhiu?

65. Mt mch chnh lu ton kc tlc cung cp in p ra dcl 35V cho ti 3,3k. Hy xc nhtrsnhnht ca tlc nu mc in p gn nh-nh yu cu l 0,5V.

66. Mt mch chnh lu ton kcha lc vi mc in p vo l 220V; 50Hz cung cp in p ra cmc nh l 15V. Khi mc mch lc u vo bng tv ti l 1k, in p ra dcl 14V. Mc

in p gn nh-nh l bao nhiu?

67. Vi mt bchnh lu ton k, dng xung o c blc bng tl 50A. Bin p c thng sin p thcp l 24V vi in p vo l 120V; 60Hz. Hy tnh trsca in trxung gn cntrong mch ny.

68. Thit kbchnh lu ton ksdng bin p im gia 18V. gn u ra khng vt qu5% bin in p ra, vi in trti l 680. Chrcc thng snh mcIov PIV ca ccdiode v chn diode thch hp thnh 2.55.

69. Thit kbngun cung cp c lc c thcho cc mc in p ra l + 9V 10% v - 9V 10%vi mc dng ti ln nht l 100mA. Hai mc in p phi c chn bng chuyn mch thitlp hai u ra. in p gn cn phi khng vt qu 0,25V rms.


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70. Thit kmch xn in p sin 20V rms thnh in p xung c bin dng ln nht l 18Vv bin m ln nht l 10V sdng ngun in p dc n 24V.

71. Hy xc nh mc in p trn mi ttrong mch hnh 2.85.

Mc 1-17 Dioden p

72. Mt diode zener c VZ= 7,5V v ZZ= 5 ti mcdng o. Vmch tng ng ca zener.

73. Tc tuyn hnh 3.58, dng zener nhnht (IZK),in p zener ti mcIZK gn ng l bao nhiu?

74. Khi dng ngc trong mt diode zener tng ln t20mA n 30mA, th in p zener s thay i t5,6V n 5,65V. Trkhng ca zener l bao nhiu?

75. Mt diode zener c trkhng l 15. in p u cc ca zener l bao nhiu ti mc dng 50mAnu VZ= 4,7V ti mc dngIZ= 25mA?

76. Mt diode zener c cc thng ssau: VZ= 6,8V ti 25C v hsnhit TC= + 0,04% / C.Hy xc nh in p zener ti 70C.

Mc 1-18 Cc ng dng ca dioden p

77. Xc nh mc in p vo thp nht cn thit c sn nh cho mch c

thit lp nh hnh 3.59. Githit diode zener l tng cIZK= 1,5mA v VZ= 14V.


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78. Lp li nh bi tp 77, viZZ= 20v VZ= 14V ti mc dng 30mA.

79. Cn phi iu chnhRtrong mch hnh 3.60, n gi trno to raIZ= 40mA? Cho VZ=12V ti mc dng 30mA vZZ= 30.

80. t in p sin 20V nh vomch hnh 3.60, thaycho ngun dc. V dng sngra. S dng gi tr ca ccthng s cho bi tp 79.

81. Bn nh bng zener c tinh hnh 3.61. VZ = 5,1VtiIZ= 49mA;IZK= 1mA;ZZ= 7 , v IZM = 70mA. Xcnh cc mc dng ti cho

php ln nht v nhnht.

82. Tnh n nh ti theo phn trm cho bi tp 81.

[ NL FL

FL

Load regulation = 100%V V

V

]

83. Phn tch mch hnh 3.61, c n nh nguntnh theo phn trm khi sdng in p vo t6Vn 12V khng ti.

[ OUT

IN

Line regulation 100%V

V

]

84. Mch n nh bng zener c in p ra khng ti, VNL=8,23V, v in p ra y ti VFL= 7,98V.

Tnh n nh ti tnh theo phn trm. [ NL FL

FL


V

]

85. bn nh bng zener, khong thay i ca in p ra l 0,2V khi in p vo t5V n 10V.

n nh ngun theo phn trm l bao nhiu? [ OUTIN

Line regulation 100%V

V

]

86. in p ra ca bn nh bng zener l 3,6V khi khng ti v 3,4V khi y ti. Tnh n nh

ti theo phn trm. [ NL FL

FL


V

]


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Mc 1-19 Diode bin dung - VARACTOR

87. Hnh 3.62, l c tuyn in p ngc theo in dung camt varactor. Hy xc nh thay i theo in dung nuVRthay i t5V n 20V.

88. Hy xt c tuyn hnh 3.62, v xc nh gi trca VRcin dung 25pF.

89. Gi trin dung cn thit cho mi varactor mch hnh 3.63, l bao nhiu to ra tn scnghng l 1MHz?

90. Ti gi trno cn phi c in p VRcho bi tp

89 nu varactor c c tuyn nh hnh 3.62?

Mc 1-20 Diode pht quang - LED

91. LED hnh 3.64(a) c c tuyn pht quangnh hnh 3.64(b). Bqua st p thun caLED, hy xc nh mc cng sut pht x(nh sng) c to ra theo mW.

92. Hy xc nh cch mc bhin thby on hnh 3.65, hin ths5. Dng thun lin tc ln nhtcho mi LED l 30mA v s dngngun cung cp l + 5V.

93. Lp rp mng n-giao thng vi LED mu vng bng cch dngslng ti thiu cc in trhn dng lm vic tngun cungcp l 24 V v bao gm 100 LED c F 30 mAI v s lng cc

LED bng nhau trong mi nhnh song song. Hy thhin mch vgi trcc in tr.

94. Vi mt photodiode ti mc chiu sng cho, in trngc l200kv in p ngc l 10V. Dng chy qua photodiode l baonhiu?


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95. in trca mi photodiode hnh 3.66, l bao nhiu?

96. Khi ng chuynmch hnh 3.67,microammeter chthtng hay gim?Gi sD1 v D2c ghp quang.

Mc 1-21 Cc loi diode khc

97. c tuyn V-Ica mt diode tunnel cho thy l dng in thay i t0,25mA n 0,15mA khiin p thay i t125mV n 200mV. in trl bao nhiu?

98. Kiu mch no thng hay sdng diode tunnel?

99. Mc ch lm lch bmt no c trong sdng diode laser? Ti sao chlm lch ring mt pha?

Mc 1-22 Sctrong mch diode100. i vi mi nhm cc mc in p o c ti cc im (1, 2, v 3) ghi hnh 3.68, xc nh

mch c hot ng ng chc nng hay khng, nhn dng cc h hng c thxy ra nht. Zenerc thng s12V.(a) V1= 110V rms; V2= 30V dc; V3= 12V dc.(b) V1= 100V rms; V2= 30V dc; V3= 30V dc.(c) V1= 0V; V2= 0V; V3= 0V dc.(d) V1= 110V rms; V2= 30V nh ton k120Hz; V3= 12V dc in p xung 120Hz..(e) V1= 110V rms; V2= 9V; V3= 0V.

101. in p u ra ca mch hnh 3.68, l bao nhiu xt theo mi trng hp hng sau y?.(a)D5hmch. (b)Rhmch.

(c) Cbr. (d) Chmch.(e)D3hmch. (f)D2hmch(g) Thmch. (h)Fhmch.


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102. Mt hthng tnh ton & iu khinc lp t ti nh ca khch hng.H thng ang c biu hin hotng chp chn nn cn phi kimtra trc tin l bng mch nguncung cp & thu / pht hng ngoi.Cn c vo hnh 3.69, hy xc nh

xem b ngun c vn sai hngno khng.

103. Mt vn khc c hthng tnh ton & iu khin. Lc ny, hthng ngng hot ng honton v bn li quyt nh kim tra trc tin bng mch ngun cung cp. Cn cvo thng tin hnh 3.70, hy xc nh sai hng.

104. Lit k cc nguyn nhn c thc lm cho LED hnh 3.55 khng pht tia hng ngoi khingun cung cp c ni vi ngun in li.


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105. Lit k cc nguyn nhn c thc lm cho photodiode hnh 3.55, khng p ng vi tia hngngoi pht ra tLED. Nu cc bc theo trnh tc thc lp sai hng.

BI TP VTHNG SCA DIODE106. Tham kho trang sliu ca diode zener hnh 3.7.

(a) tiu tn cng sut dc ln nht ca diode 1N4738 ti 25C l bao nhiu?.

(b) Xc nh tiu tn cng sut ln nht ca diode 1N4751 ti 70C v 100C?.

(c) Mc dng nhnht ca 1N4738 cn cho sn nh l bao nhiu?.

(d) Mc dng ln nht ca 1N4750 ti 25C l bao nhiu?.(e) Dng chy qua 1N4750 thay i t25mA n 0,25mA.

Trkhng zener cn phi thay i nh thno?


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(f) in p zener ln nht ca 1N4736 ti 50C l bao nhiu?

(g) in p zener nhnht ca 1N4747 ti 75C l bao nhiu?.

107. Tham kho trang sliu ca diode bin dung hnh 3.22.(a) in p ngc ln nht ca diode 1N5139 l bao nhiu?.(b) Xc nh tiu tn cng sut ln nht ca diode 1N5141 ti nhit mi trng l 60C?

(c) Xc nh tiu tn cng sut ln nht ca diode 1N5148 ti nhit v l 80C?.

(d) Ti mc in p ngc 20V in dung ca 1N5148 l bao nhiu?(e)Nu chly theo tiu chun hsphm cht, th cn phi chn diode bin dung no?(f) in dung in hnh ca 1N5142 l bao nhiu ti VR= 60V?


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108. Tham kho trang sliu ca diode pht quang - LED hnh 3.31.

(a) C tht 9V theo chiu phn cc ngc ngang qua mt MLED81 c khng?

(b) Xc nh trsnhnht ca in trni tip vi MLED81 khi sdng in p 5,1V phncc thun cho diode?

(c) Gi smc dng thun l 50mA v st p thun l 1,5V lm vic nhit xung quang45C. C vt qu thng scng sut ln nht khng?.

(d) Xc nh cng bc xtheo mc dng thun l 30mA.(e) Cng bc xti gc 20tnh ttrc l bao nhiu nu dng thun l 100mA?


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109. Tham kho trang sliu ca photodiode hnh 3.36.

(a) Mt MRD82 c mc ni tip vi mt in tr10kv ngun in p phn cc ngc.Khng chiu sng vo diode. St p trn in tr l bao nhiu?.

(b) Ti bc sng no sc mc dng ngc ln nht theo chiu sng cho?.

(c) Mc dng ti l bao nhiu ti nhit mi trng l 60C?.

(d) Ti bc sng no nhy ca MRD821 mc ln nht?.(e) Nu nhy ln nht l 50A / mW / cm2, th nhy ti 900nm l bao nhiu?(f) Tia hng ngoi vi bc sng l 900nm chiu vo MRD821 vi mc chiu sng l

3mW /cm2 v gc chiu l 40ttrc ln nht. Xc nh mc dng ngc.


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BI TP NNG CAO110. Kho st s ca bng mch hnh 3.71, v xc

nh kiu mch l mch g?

111. Nu in p vo 110V rms; 60Hz c ni n ccu vo ac, hy xc nh cc mc in p u ratrn bng mch hnh 3.71.

112. Nu mi u ra ca bng mch hnh 3.71, cmc ti c 1,0k, thng snh mc cn phi csdng l bao nhiu?

113. Hy thit kbn nh in p bng zener m bo cc thng ssau: in p u vo l 24V dc,dng ti l 35mA, v in p trn ti l 8,2V.

BI TP BSUNG PHN DIODE

114. Mt diode silicon dn nhit 25C mc st p trn hai cc diode l 0,7V. Xc nh mc stp Vtrn diode nu diode lm vic nhit +100oC v100oC.[p s: o o(100 C) = 0,55 V; (- 100 C) = 0,95 VV V ]

115. Mch hnh 1.31, dng chnh lusng sin c 100Vrmsv tn s60Hz. Mc in p ra nhnht khng th gimdi 70V v t s bin p l 1:2. in tr ti l 2k.Tnh in dung cn thit ca tlc mc song song viRL.

[p s: 8,25 F ]


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116. in p ra ca bchnh lubn kvo khong 50V, tn s60Hz. Gis tr thun ca diodebng 0, ti thp nht c thmc vo mch khi sdng tkhong 50F duy tr mc in pgn nhnht trn 40V l bao nhiu?[p s: 1,67 k ]

117. Mch chnh lu ton knh mch hnh 1.31, c bin pvi tsvng dy l 5:1.(a)Tnh tr s in dung ca t cn duy tr mc in

p nhnht khong 10V trn ti 100.[p s: 233 F ]

(b) Nu in p tn hiu vo phn (a) thay i trongkhong t 110V n 120Vrms, tn s 60Hz, th tr sin dung cn thit l bao nhiu? [p s: 233 F ]

118. Mt mch n nh bng diode Zener (hnh 1.37) c in p u vothay i trong khong t10V n 15V v mc dng ti thay itrong khong t100mA n 500mA.(a)Tnh trscaRi vIZmax, bit rng mch sdng diode zener

6V. [p s: 6,33 ; 1,32 A ](b)Hy tnh cng sut nh mc cho diode zener v in trvo

(Ri). [p s: 7,92 W; 12,8 W ](c)Hy tnh tr s ca t cn thit nu mc ngun l u ra ca

mch nn bn kvi tn hiu vo l 60Hz. [p s: 4731 F ]


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119. V c tuyn ID theo VD cho mt diodesilicon nu dng bo ha ngc IS =0,1A, s dng n = 1,5 i vi silicon.Xc nh mc in p chuyn sang dnca diode.

120. Vc tuyn ID theo VD cho mt diode germanium nu dng bo ha ngcIS = 0,01mA. Xcnh mc in p chuyn sang dn cho diode (c tuyn c thvtrn cng trc thnh ctuyn ca bi tp 1.4).

121. Nu ti u ra ca mt mch nn bn kl 10k, th trsca tcn phi c l bao nhiu c mc in p ra khng thay i qu 5%? in p vo l 100Vrms, 60Hz. Da vo hnhP1.1. Suy ra dng sng ra.[p s: = 33,4 FC ]

122. Thit k mt b ngun cung cp theo kiu mch nn bn k nhn tn hiu vo l120Vrms, 60Hz v yu cu mc in p ra ln nht l 17V v thp nht l 12V. Ngun cung cpscung cp in p ngun cho mch in tcn mc dng khng i l 1A. Hy xc nh cuhnh mch, tsvng dy ca bin p, trsca t. Giscc diode v bin p l l tng.


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123. Nu ti u ra ca mch nn ton kl 10k, trsca tl bao nhiu cn thit duy tr mc in pra khng thay i thp nhiu so vi 10% ? Tn hiuvo l 110Vrms, 60Hz. Da vo hnh P1.3. Vdngsng ra.

124. Lp li bi tp 1.10, vi kiu ngun cung cp l mch chnh lu ton k.[p s: 5; 12 ; 2,36 mFLa= R = ]

125. Hy xc nh thng sca ttrong mch hnh 1.31, khi a= 6 vRL = 50. Mc in p nhnht n ti cn phi cmc suy gim khng qu 20%.

127. Nu mt diode zener c mc trong mch nhhnh P1.6, tr sin

trRi l bao nhiu duy tr in p trn ti mc 10V (VZ) khi dng tithay i t50mA n 500mA v in p vo thay i t15V n 20V ?Hy xc nh mc cng sut nh mc cn thit cho in tr v diodezener.


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128. Mch n nh bng zener nh hnh P1.6, s dng diode zener 20V duy tr in p khng i 20V trn in tr ti RL. Nu in p vothay i t 32V n 43V v dng ti bin thin t 200mA n 400mA,hy tnh chn tr s ca Ri gi in p khng i trn ti. Xc nhcng sut nh mc cn thit cho in trv diode zener.

129. Mch n nh zener nhhnh P1.7, sdng diode zener 9V gimcin p khng i 9V trn ti, vi in p vo thay i t18V n 25Vv dng ra thay i t400mA n 800mA. GisRZ = 0.(a)Chn tr s cn thit cho Ri v xc nh mc cng sut yu cu nh

nht ca in trvo.(b)Xc nh mc cng sut nh mc ca diode zener.(c)Tnh bin thin ca in p ra nhnh nuRZ = 1.[p s: 9,76iR = ]

130. Gi s khng c tn hao trong cc diode nn camch nn ton k(hnh P1.8) vi n = 2, tr s ca

Ri cn thit l bao nhiu duy tr VL mc16V vi dng ti l 500mA, s dng zener 16V?VS thay i trong khong t110Vrms n 120Vrms,60Hz. GisRZ = 0. Mc in p mch n nhcn phi khng c gim nhiu hn 8V trn mcVZ.


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131. Giskhng c st p cc diode chnh lu trongmch hnh P1.8, v n = 2, trscaRi cn thit l

bao nhiu duy tr VL = 16V vi mc dng tikhong 500mA? in p vo ca bin p l110Vrms n 120Vrms, 60Hz. in p ra camch nn c lc khng th thay i nhiuhn 5V. Hy xc nh cng sut nh mc cn

thit cho in trv diode zener.

132. Thit kbngun n p ton ksdng bin p im gia 4:1 v diode zener 8V, 1W cungcp 8V khng i cho ti thay i t 200n 500. in p vo ca bin p l 120Vrms,60Hz. Bqua tn hao trong bin p v cc diode. Xc nh:(a) IZmax vIzmin ; (b)Ri v Vsmin; (c)trstcn thit; (d)n nh theo % khiRZ = 2 .[p s: max min125 mA; 93,7 ; = 12,9 V; 141 F;% Reg 2,81%Z i sI = R = V C = = ]


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133. Thit kbngun n p ton ksdng bin p im gia 5:1 v diode zener 8V, 2W cungcp 8V khng i cho ti thay i t 100 n 500. in p vo ca bin p l 120Vrms,60Hz. Bqua tn hao trong bin p v cc diode. Xc nh:(a)IZmax vIZmin. (b)Ri v VSmin. (c)trstcn thit.(d)n nh theo % khiRZ = 2 . (e)Cng sut nh mc caRi.

134. Sdng cc gi trca in p vo i vi Ri cabi tp 1.18, nhng dng zener 12V, tr s ca Ricn phi c l bao nhiu duy tr 12V u ranu ti thay i t 20mA n 600mA? Thng sca tcn phi c l bao nhiu?


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135. Sdng mch hnh P1.8, v giskhng c tnhao cc diode nn, tr s ca Ri l bao nhiu duy tr 12V trn ti bng cch sdng diode zener12V, khi VS t 105Vrms n 120Vrms, 60Hz? inp ra ca mch nn gim 20% do thng s ca tC1, v ti thay i t50mA n500mA. Thng sca tl bao nhiu? Cho n = 2.


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TM TT NI DUNG TRANSISTOR HIU NG TRNG

JFETs Tip gippncng-ngun cn phi c phn cc-ngc. GSV iu khin DI .

Gi tr ca DSV m ti DI tr nn khng i

(bo ha) c gi l in p tht knh ( DSPV ) . Gi trca GSV m ti DI trnn bng 0 c

gi l in p ngt knh (GS(off)

V ) .

DSSI l gi trdng mng khi GS 0V .

c tuyn truyn t:

2

GSD DSS

GS(off )

1 V

I IV

hdn-thun:

GS

0GS(off )

1m m

Vg g

V

, trong : DSS

GS(off )

2

m0

Ig

V

E-MOSFETsChlm vic chtng cng

GSV cn phi ln hn GS(th)V .

Chtng cng:MOSFET tng cng knhn: GSV dng

MOSFET tng cng knhp: GSV m

GSV iu khin DI .

Gi tr ca GSV m ti DI bt u tng c gi l

in p ngng ( GS(th)V ) .

c tuyn truyn t: 2

D GS GS(th)2

kI V V

Hskc thtnh theo phng trnh trn bng cch thay thcc gi trca DI v GSV tng

ng viD(on)

I c quy nh theo GSV .

D-MOSFETsC th lm vic c chngho hoc ch tng cng. GSV c thc phn cc ti

GS 0V

Chngho:MOSFET ngho knhn: GSV m

MOSFET ngho knhp: GSV dng

Chtng cng:MOSFET tng cng knhn: GSV dng

MOSFET tng cng knhp: GSV m

GSV iu khin DI .

Gi trca GSV m ti DI trnn bng 0 c gi l

in p ngt (GS(off)

V ) .

c tuyn truyn t: 2

D GS GS(th)2

kI V V


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IGBT c iu khin bng in p nh MOSFET.

Hc tuyn ra ging nh BJT.

C ba in cc: cng, collector, emitter.

PHN CC CHO FET (Cc tnh in p v chiu dng in l o ngc i vi FET knh p)

2-1. Transistor hiu ng trng l cu kin n ht ti (chmt loi ht ti in). Cc in cc ca FET l in cc ngun [Source], cc mng [Drain], v cc cng [Gate]. JFET lm vic vi tip gippn(cng-ngun) phi c phn cc-ngc. in trvo cao ca JFET l do tip gippn(cng-ngun) c phn cc-ngc. Phn cc ngc JFET slm cho vng ngho tng trong phm vi knh dn, do vy lm tng

in trknh dn.

2-2. i vi JFET knh-n, GSV c ththay i t0, m cho n in p ngng dn, GS(off)V . i viJFET knh-p, GSV c ththay i t0, dng cho n in p ngng dn, GS(off)V .

DSSI l dng mng hng khi GS 0V . iu ny l ng cho cJFET v D-MOSFET .

FET c gi l cu kin theo lut-bnh phngdo quan hgia DI theo bnh phng ca

biu thc gm c GSV .

2-3. Phn cc im gia ca mt JFET l D DSS 2I I , nhn c bng cch thit lp

GS GS(off ) 3,4V V

im-Qmch JFET phn cc phn-p l n nh hn so vi mch JFET t-phn cc. Phn cc ngun dng-hng stng cng n nh ca mch JFET t-phn cc.

2-4. JFET sdng nh mt bin trkhi c phn cc lm vic vng thun tr[ohmic]. in p cng siu khin DSR vng thun tr.

Khi JFET c phn cc ti gc htrc ta ( GS 0V , D 0I ), in trknh dn ac sc

iu khin bi in p cng.2-5. MOSFET khc vi JFET c im l cng ca MOSFET c cch ly khi knh bng mt

lp SiO2, khc vi cng v knh JFET c cch ly bi mt tip gippn. MOSFET ngho (D-MOSFET) c thhot ng vi in p cng-ngun bng 0, dng, hoc

m.

D-MOSFET c knh vt l gia mng v ngun. i vi D-MOSFET, cc gi trm ca GSV sto ra chngho v gi trdng ca GSV s

to ra chtng cng. MOSFET tng cng khng c knh vt l. Khc vi JFET v D-MOSFET, E-MOSFET khng hot ng vi GS 0V .


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Knh dn c cm ng E-MOSFET bng cch t in p GSV ln hn so vi gi trin

p ngng,GS(th)

V .2-6. E-MOSFET khng c thng s DSSI . Nu c th gi trrt nh(l tng l bng 0).

E-MOSFET knh-ncGS(th)

V dng. E-MOSFET knh-pcGS(th)

V m.

c tuyn truyn t ca D-MOSFET giao ct vi trc dc DI .

c tuyn truyn t ca E-MOSFET khng giao ct vi trc dc DI . Tt ccc cu kin MOS u dbhng do tnh in (ESD).

2-7. Phn cc im gia cho D-MOSFET l D DSSI I c c bng cch thit lp GS 0V .

D-MOSFET c cng c phn cc 0 do c in trln so vi t. E-MOSFET cn phi c GSV ln hn so vi gi trngng.

2-8. BJT c cng cch ly (IGBT) l kt hp cc c tnh u vo ca MOSFET vi cc c tnhu ra ca BJT.

IGBT cba in cc: emitter, cng, v collector. IGBT c sdng trong cc ng dng chuyn mch in p-cao.

2-9. Hmch cng kh pht hin mch D-MOSFET phn cc-0 do in p cng thng mc0 V, tuy nhin c thxut hin in p thay i.

Hmch cng dpht hin mch E-MOSFET bi v in p cng thng khc vi 0 V.2-10. in dn,

mg , ca FET lin quan vi dng ra, DI , vi in p u vo, gsV .

Hskhuych i in p ca mch khuych i ngun-chung (CS) c xc nh chyubi in dn, mg , v in trmng, dR .

in trni mng-ngun, dsr' ca FET snh hng n hskhuych i (slm gim h

skhuych i) nu n khng ln hn nhiu so vi dR c thbqua.

in trgia cc ngun vi t ( sR )khng c rmch bng tslm gim hskhuych

i in p ca bkhuych i bng FET. in trti c mc n cc mng ca mch khuych i ngun-chung slm gim hs

khuych i in p. C so pha 180cc in p gia cng v mng. in trvo ti cng ca FET l rt cao.

2-11. Hskhuych i ca mch khuych i mng-chung (CD) hay lp li-cc ngun (SF) lunlun nhhn 1.

mch SF khng c so pha tn hiu gia cng v ngun.2-12. in trvo ca mch khuych i cng-chung (CG) bng nghch o ca mg .

Mch khuych i cascode l kt hp mch khuych i CS v CG.2-13. Mch khuych i lp D l mch khuych i phi tuyn bi v cc transistor hot ng nh

cc chuyn mch.

Mch khuych i lp D sdng iu chbin -xung (PWM) biu din tn hiu vo. Blc thng-thp schuyn i tn hiu PWM trli thnh tn hiu vo ban u. Hiu sut ca bkhuych i lp D st n 100%.

2-14. MOS b (CMOS) c sdng trong cc mch chuyn mch scng sut-thp. CMOS ssdng mt MOSFET knh-nv mt MOSFET knh-pmc ni tip vi nhau. Bo, cng NAND, v cng NOR l cc v dca mch logic s.


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Cu hi vtransistor hiu ng trng

1. JFET l . . .(a)cu kin n ht ti; (b)cu kin iu khin bng in p;(c)cu kin iu khin bng dng in; (d)gm c(a) v (c). (e)gm c(a) v (b).

2. Knh dn ca JFET l gia . . .(a)cng v mng; (b)mng v ngun; (c)cng v ngun; (d)u vo v u ra

3. JFET lun lm vic vi(a)phn cc ngc tip gippncng-ngun;(b)phn cc thun tip gippncng-ngun(c)in cc mng c ni t; (d) in cc cng c ni vi cc ngun.

4. Vi VGS= 0V, dng mng strnn khng i khi VDSvt qu

(a)in p ngng dn; (b)VDD; (c)VDSP; (d)0V

5. Vng dng-hng [constant-current] ca FET thuc trong khong gia(a)vng ngng dn v bo ha; (b)vng ngt v in p tht knh;(c)0 vIDSS; (d) in p tht knh v in p nh thng.

6. IDSSl(a)dng mng vi cc ngun bngn mch;(b)dng mng ti vng ngt;

(c)dng mng c thc ln nht; (d)dng mng im gia.

7. Dng mng vng dng-hng stng ln khi(a)in p phn cc cng-ngun gim; (b)in p phn cc cng-ngun tng;(c)in p phn cc mng-ngun tng; (d)in p phn cc mng-ngun gim.

8. Trong mt mch FET c VGS= 0V; VDD= 15V;IDSS= 15mA, vRD= 470. NuRDgim xungbng 330, thIDSSbng(a)19,5mA; (b) 10,5mA; (c)15mA; (d)1mA.

9. Ti vng ngt, knh dn ca JFET l(a)mc rng nht ca knh; (b)bnghn hon ton bi vng ngho;(c)rt hp; (d)c phn cc ngc.

10. Trang sliu ca JFET cho VGSOFF= - 4V. in p tht knh [pinch-off], VDSP,(a)khng thxc nh c; (b)= - 4V; (c)phthuc vo VGS;(d)= + 4V.

11. JFET cu hi 10(a)l JFET knh n; (b)l JFET knhp; (c)c thl chai loi.


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12. Cho mt JFET cIGSS= 10nA o ti mc VGS= 10V. in trvo l(a)100M; (b)1M; (c)1000M; (d)1000m.

13. Mt JFET knhp, VGSOFF= 8V. Trsca VGSc phn cc im gia xp x bng(a)4V; (b)= 0V; (c)1,25V; (d)= 2,34V.

14. MOSFET khc bit chnh vi JFET l do(a)thng scng sut; (b)MOSFET c hai cng;(c)JFET c mt tip gippn; (d)cc MOSFET khng c knh vt l.

15. in trmng-ngun vng thun trphthuc vo(a) GSV ; (b)cc trsca im-Q;

(c)dc ca c tuyn ti im-Q; (d)tt cccphng n trn.

16. sdng c nh mt bin tr, JFET cn phi(a)cu kin knh-n; (b)cu kin knh-p;(c) c phn cc vng thun tr; (d) c phn cc vng bo ha.

17. Khi JFET c phn cc gc htrc ta , in trknh ac sc xc nh bng(a) gi trca im-Q; (b) GSV ;

(c)hdn; (d)c(b) v (c).

18. MOSFET khc bit chnh vi JFET l do(a)thng scng sut; (b)MOSFET c hai cng;(c)JFET c mt tip gippn; (d)cc MOSFET khng c knh vt l.

19. Mt D-MOSFET (MOSFET-ngho) shot ng (a)= 0A; (b)khng thxc nh c; (c)=IDSS;

20. Mt D-MOSFET knh-nvi VGSdng l ang lm vic (a)chngho; (b)chtng cng; (c)ngt [cutoff]; (d)bo ha.

21. Mt E-MOSFET (MOSFET kiu tng cng) knh-pc VGS(th)= - 2V. Nu GS 0 VV , th dng

mng l

(a)0A; (b)D(on)

I ; (c)ln nht; (d) DSSI .

22. mt E-MOSFET khng c dng mng cho n khi GSV

(a)t n GS(th)V ; (b)dng; (c)m; (d) = 0.

23. Tt ccc cu kin MOS u dbhng do(a)qu nhit; (b)x in tch tnh; (c)qu p; (d) tt ccc l do trn .


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24. Mt D-MOSFET (MOSFET-ngho) c phn cc mc VGS= 0V. Cc thng strang sliuca cu kin l DSS 20 mAI v GS(off) = - 5 VV . Gi trca dng mng

(a)= 0A; (b)khng thxc nh c; (c)= 20 mA;

25. IGBT thng c sdng trong(a)cc ng dng cng sut-thp; (b)cc ng dng tn scao (rf);

(c)cc ng dng in p-cao; (d)cc ng dng dng-thp.

26. Trong mch khuych i ngun-chung (CS), in p ra l(a)lch pha 180so vi in p vo; (b)ng pha vi in p vo;(c)c ly trn cc ngun;(d)c ly trn cc mng; (e)gm c(a) v (c); (f)gm c(a) v (d).

27. Trong mch khuych i ngun-chung (CS), Vds = 3,2V rms v Vgs= 280mV rms. Hskhuychi in p bng(a)1; (b)11,4; (c)8,75; (d)3,2

28. Trong mt mch khuych i CS,RD = 1k;RS= 0,56k; VDD= 10V, vgm= 4,5mS. Nu intrngun c rmch hon ton, th hskhuych i sbng(a)450; (b)45; (c)4,5; (d)2,52

29. Xt mt cch l tng, mch tng ng ca FET gm(a)1 ngun dng mc ni tip vi 1 in tr; (b)1 in trgia cc mng v cc ngun;(c)1 ngun dng gia cc cng v cc ngun; (d)1 ngun dng gia cc mng v cc ngun

30. Gi trca ngun dng in cu hi 29 phthuc vo(a)in dn v in p cng-ngun; (b)in p ngun cung cp;(c)in trRD; (d)gm c(b) v (c).

31. Mt mch khuych i ngun-chung c hskhuych i in p bng 10. Nu tho trmchcc ngun,(a)hskhuych i stng; (b)hdn stng;(c)hskhuych i sgim; (d)im-Qsbdch chuyn.

32. Mt mch khuych i CS c in tr ti bng 10kv RD= 0,8k. Nu gm= 5mS v Vin=500mV, th in p tn hiu ra l(a)1,89V; (b)2,05V; (c)25V; (d)0,5V.

33. Nu loi bin trti mch cho cu hi 32, th in p tn hiu ra l(a)khng thay i; (b)gim; (c)tng; (d)bng 0.

34. Mt mch khuych i CD cRS= 1kc in dn l 6mS, hskhuych i l(a)1; (b)0,86; (c)0,98; (d)6.


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35. Trang sliu ca transistor sdng trong mch khuych i mng-chung (CD) choIGSS= 5nA timc VGS= 10V. Nu in trmc gia cng v t, RG= 50M, in trvo ton bxp x

bng(a)50M; (b)200M; (c)40M; (d)20,5M.

36. Mch khuych i cng-chung (CG) khc vi chai cu hnh CS v CD c im l mch c

(a)hskhuych i in p cao hn nhiu;(b)hskhuych i in p thp hn nhiu;(c)in trvo cao hn nhiu; (d)in trvo thp hn nhiu.

37. Nu yu cu chai hskhuych i in p v in trvo cao, th cn phi sdng(a)mch khuych i CS; (b)mch khuych i CD;(c)mch khuych i CG;

38. Mch khuych i cascode bao gm(a)mch khuych i CD v CS; (b)mch khuych i CS v CG;

(c)mch khuych i CG v CD; (d)hai mch khuych i CG.

39. Mch khuych i lp D tng tvi(a)lp C; (b)lp B; (c)lp A; (d)ngoi cc trng hp trn.

40. Mch khuych i lp D sdng(a)iu chtn s; (b)iu chbin ;(c)iu chrng-xung; (d)iu chkhng chu k.

41. E-MOSFET thng c dng cho cc ng dng chuyn mch l do . . . . . . . . ca chng(a)c tnh ngng; (b)in trvo cao;(c)tuyn tnh; (d)hskhuych i cao.

42. Mch ly mu cn phi ly mu tn hiu ti mc thp nht ca(a)mt khong thi gian trong chu k; (b)tn stn hiu;(c)hai ln tn stn hiu; (d)cc chu kthay i.

43. Mch CMOS c bn sdng thp ca(a)cc MOSFET knh-n; (b)cc MOSFET knh-p;(c)cc BJTpnpv npn; (d)mt MOSFET knh-nv mt MOSFET knh-p.

44. CMOS thng c sdng trong(a)cc mch s; (b)cc mch tuyn tnh; (c)cc mch RF; (d)cc mch cng sut.

45. Nu c mt hmch bn trong gia cc mng v cc ngun mch khuych i CS, th in pti cc mng sbng vi(a)0V; (b) DDV ; (c) GSV ; (d) GDV .


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BI TP

BI TP C BN

Mc 1-1 JFET

1. GSV ca mt JFET knh-pc tng ln t1V n 3V.(a) Vng ngho shp hn hay rng hn?(b)in trknh tng hay gim?

2. Ti sao in p cng-ngun ca JFET knh-ncn phi lun lun bng 0 hoc l m?

3. Vk hiu mch ca JFET knh-pv knh-n.Ghi tn cc in cc.

4. Hy vcch mc in p phn cc gia cccng v cc ngun ca hai JFET mchhnh 7.56.

Mc 2-2 Hc tuyn v cc thng sca JFET

5. Mt JFET c in p in p tht knh ( DSPV ) l 5V. Khi GS 0 VV , th DSV l bao nhiu ti imm dng mng trnn khng i?

6. Mt JFET knh-nc phn cc mc GS - 2 VV . Trsca GS(off )V l bao nhiu nu DSPV cxc nh l 6V? Cu kin ang dn dn hay ngng dn?

7. Trang sliu ca mt JFET cho bit GS(off) - 8 VV v DSS 10 mAI . Khi GS 0 VV , th DI l bao

nhiu i vi cc gi trca DSV ln hn in p tht? DD 15 VV .

8. Mt JFET knh-pc GS(off) 6 VV . DI l bao nhiu khi GS 8 VV ?

9. JFET mch hnh 7.57, c GS(off ) - 4 VV . Gisrng tng in p

ngun cung cpDD

V bt u ti mc 0 cho n khi ammeter t

n tr s n nh. Voltmeter s ch th gi tr tng ng l bao

nhiu?


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10. Cc thng ssau ttrang sliu camt JFET: GS(off ) - 8 VV v

DSS 5 mAI . Hy xc nh cc trs

ca DI theo mi trsca GSV trong

khong t0V n8V theo cc mctng 1V. Vc tuyn truyn t tsliu trn.

11. Vi JFET bi tp 10, gi trno ca GSV cn thit lp mc dng mng l 2,25mA?

12. Vi JFET, cgm0= 3200S. Gi trcagml bao nhiu khi GS - 4 VV , bit rng GS(off ) - 8 VV ?

13. Xc nh hdn thun ca JFET c phn cc mc GS - 2 VV . Cc thng sttrang s

liu, GS(off ) - 7 VV v gm = 2000S o ti mc GS 0V . Ngoi ra, hy xc nh dn nptruyn t thun,yfs.

14. Trang s liu ca mt JFET knh-pcho bit GSS 5 nAI ti mc GS 10 VV . Xc nh in tr

vo ca JFET.

15. V c tuyn truyn

t ca JFET cDSS 8 mAI v

GS(off ) - 5 VV . S

dng t nht 4 im.

Mc 2-3 Phn cc cho JFET

16. Mt mch JFET knh-ntphn cc c mc dng mng l 12 mA v in trmc ti cc ngun

l 100. Gi trca GS 0V tng ng l bao nhiu?

17. Hy xc nh trsca SR cn thit mch JFET tphn cc to ra GS - 4 VV khi dng mng

D 5 mAI .

18. Hy xc nh trsca SR cn thit mch JFET tphn cc to ra dng mng D 2,5 mAI khiGS - 3 VV .


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19. Mt JFET c DSS 20 mAI v GS(off ) - 6 VV .

(a)Gi trca DI l bao nhiu khi GS 0V ?

(b)Gi trca DI l bao nhiu khi GS GS(off )V V ?

(c)Nu tng GSV t - 4V n

1V, th DI s tng ln hay

gim xung?

20. Hy xc nh DSV v GSV cho mi

mch hnh 7.58.

21. Sdng c tuyn hnh 7.59, xc nh gi trca SR p

ng vi dng mng l 9,5mA.

22. Thit lp phn cc im gia cho JFET c DSS 14 mAI vGS(off)

- 10 VV . S dng ngun cung cp 24V. Hy v

mch v tnh cc trscc in tr. Cng nh cc trsca

DI , GSV , v DSV .

23. Hy xc nh in trvo ton bcho mch hnh 7.60.Cho GSS 20 nAI tng ng vi GS 10 VV .

24. Xc nh im-Q bng th camch hnh 7.61(a) bng cch dngc tuyn truyn t hnh 7.61(b).


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25. Xc nh thng sim-Qcho mchJFET knh-pnh hnh 7.62.

26. in p o gia mng v t trong mch hnh 7.63 l 5V, hy xc nh thng s

im-Qca mch.

27. Xc nh cc gi tr cain-Q ca mch JFET

phn cc phn p hnh7.64.

Mc 2-4 Vng thun tr[ohmic]

28. Mt JFET c phn cc vng thun tr ti mc DS 0,8 VV v D 0,20 mAI .Gi trca

in trmng-ngun l bao nhiu?

29. im-Q ca mt JFET thay i t DS 0,4 VV v D 0,15 mAI n DS 0,6 VV v

D 0,45 mAI .Hy xc nh khong cc gi trca DSR .

30. Xc nh in dn ca JFET c phn cc ti gc ta bit rng m0 1,5 mSg ; GS - 1 VV ;

v GS(off ) - 3,5 VV .

31. Xc nh in trmng-ngun ac ca JFET cho bi tp 30.


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Mc 2-5 MOSFET

32. Vk hiu mch ca D-MOSFET v E-MOSFET knh-nv knh-p.

33. chlm vic no D-MOSFET knh-nhot ng vi VGSdng.

34. Gii thch skhc nhau c bn gia D-MOSFET v E-MOSFET.

35. Gii thch ti sao chai loi MOSFET u c in trvo rt cao ti cng.

Mc 2-6 Cc thng sv hc tuyn ca MOSFET

36. Phiu sliu ca E-MOSFET cho bit l D(on) 10 mAI

ti mc GS - 12 VV v GS(th) - 3 VV . Tnh DI tng

ng vi GS - 6 VV .

37. Tnh IDSS, cho bit l, D 3 mAI ; GS - 2 VV , v

GS(th) - 10 VV .

38. Phiu sliu ca mt D-MOSFET cho bit GS(th) - 5 VV v DSS 8 mAI .

(a)Cu kin ny l knh-phay knh-n?

(b)Xc nh mc dng DI theo cc gi trca GSV

trong khong t - 5V n + 5V theo bc tng1V.

(d)Vc tuyn truyn t bng cch sdng sliu tphn (b)

Mc 2-7 Phn cc cho MOSFET

39. Hy xc nh mi D-MOSFET mch hnh7.65, l c phn cc chno (ngho;tng cng; hay phn cc 0).

40. Mi E-MOSFET mch hnh 7.66, c GS(th)V

bng + 5V hoc 5V, ty thuc vo cukin l knh-n hay knh-p. Hy xc nhtng MOSFET dn [ON] hay ngng dn[OFF].


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41. Hy xc nh DSV cho mi mch hnh 7.67, DSS 8 mAI .

42. Tnh GSV v DSV cho mi mch E-MOSFET hnh

7.68, Thng sc lit k mi mch.

43. Cncvo cc gi tro GSV tng

h trn mch, hy xc nh mcdng mng v in p mng-nguncho mi mch hnh 7.69.

44. Hy xc nh in p cng-ngun thc tmch hnh 7.70, bng cch tnh t dng r cng, GSSI . Cho bit l GSSI

bng 50 pA v DI bng 1mA cc trng thi phn cc tng ng.

Mc 2-8 IGBT

45. Hy gii thch ti sao IGBT c in trvo rt cao.

46. Hy gii thch dng collector tng vt tri nh thno to ra trng thi cht-ln [latch-up] IGBT.

Mc 2-9 Mch khuych i ngun-chung (CS)

47. Mt JFET cgm= 6mS. Hy xc nh mc dng mng rms theo mi gi trrms ca GSV sau.(a) 10mA (b)150mV (c) 0,6V (d)1V

48. Hskhuych i ca mch khuych i bng JFET vi in trmc ti cc ngun bng 0 l 20.

Hy xc nh in trmng nugmbng 3,5mS.


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49. Mt mch khuych i bng JFET c 4,2 mSmg ; DS 12 kr' v D 4,7 kR . Hskhuychi in p ca mch l bao nhiu? Githit in trmc ti cc ngun l 0 ..

50. Hskhuych i ca mch khuych i cho bi tp 3 l bao nhiu nu in trmc ti ccngun bng 1 k?

51. Nhn dng loi FET v mch phncc ca FET hnh 8.33. GSV l bao

nhiu?

52. Tnh cc mc in p dc trn miin cc so vi t ca cc FET hnh 8.33.

53. Nhn bit c tuyn hnh8.34, tng ng vi loi FETno?

54. Tham kho c tuyn truyn t ca JFET hnh 8.18(a) v xc nh trsnh-nh ca di khithay i trong khong 1,5V xung quang gi trca im - Q.

55. Lp li bi tp 8 vi cc c tuyn hnh 8.18(b) v hnh 8.18(c).


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56. Mch hnh 8.35, c D 2,83 mAI , tnh DSV v GSV . Thng scaJFET l GS(off ) - 7 VV v DSS 8 mAI .

57. Nu a tn hiu vo 50 mV rms n mch khuych i hnh 8.35,th mc in p ra nh-nh l bao nhiu?gm= 5 mS.

58. Nu ti 1,5 kc mc u ra ca mch hnh 8.35, th mc in p ra (rms) c trn ti l baonhiu khi t tn hiu vo l 50 V rms?gm= 5 mS.

59. Hy xc nh hskhuych i in p cho mi mch hnh 8.36.

60. Vmch tng ngdc v ac cho bkhuych i hnh8.37.

61. Xc nh mc dngmng trong mch hnh 8.37, JFET c

DSS 15 mAI v

GS(off ) - 4 VV . im-

Q c chn trungtm vng lm vic.

62. Hskhuych i ca mch hnh 8.37, lbao nhiu nu C2c tho ra khi mch.

63. Trong mch hnh 8.37, nu mc song song

viRLmt in tr4,7k, th hsin pl bao nhiu?


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64. Vi mch khuych i ngun-chung (CS) hnh 8.38, hyxc nh DI , GSV v DSV c im-Q trung tm.

DSS 9 mAI , v GS(off ) - 3 VV .

65. Nu t tn hiu 10 mV rms vo u vo ca mch khuych i hnh 8.38, th gi trhiu dng ca tn hiu ra l bao nhiu?

66. Hy xc nh GSV , DI , v DSV ca mch khuych i hnh 8.39.

D(on) 18 mAI o mc GS 10 VV ; GS(th) 2,5 VV , vgm= 3mS.

67. Hy xc nh inR nhn tngun tn hiu vo mch hnh8.40. GSS 25 nAI tng ng vi GS - 15 VV .

68. Hy xc nh dng sng in p ton bti cc mng (dc vac) v dng sng outV hnh 8.41. gm = 4,8 mS v

DSS 15 mAI .

69. Cho mch khuych i khng ti hnh 8.42, tnh GSV , DI ,

DSV , v in p ra hiu dng, DSv . Bit D(on) 8 mAI ti

GS 12 VV ; GS(th) 4 VV , vgm= 4,5mS.


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Mc 2-10 Mch khuych i mng chungCD

70. Cho mch lp li-ngun hay cn gi l SF [Source-Follower] hnh 8.43, tnh h s khuych i in p vin trvo ca mch. GSS 50 pAI ti GS - 15 VV ; vgm

= 5,5 mS.

71. Nu JFET trong mch hnh 8.43, c thay thbng mt JFET khc c gm= 3mS, th hskhuych i v in trvo l bao nhiu? tt ccc iu kin khc trong mch khng thay i.

72. Tnh hskhuych i cho mi mch hnh 8.44.

73. Xc nh hskhuych i in p cho mi mch

hnh 8.44, khi ti c thay i bng 10 k.

Mc 2-11 Mch khuych i cng chungCG

74. Mt mch cng chung cgm= 4mS v D 1,5 kR .Hskhuych i ca mch l bao nhiu?

75. in trvo ca mch khuych i bi tp 74 lbao nhiu?

76. Hy xc nh h skhuych i in pv in tr vo camch khuych icng chung hnh8.45.


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77. Cho mch khuych i cascode nh thhin hnh9.24, 2,8 mSmg ; GSS 2 nAI @ GS 15 VV . Nu

3 15 MR v 1,5 mHL , hy xc nh h s

khuych i in p v tr khng vo tn s100 MHzf .

Mc 2-12 Mch khuych i lp D78. Mch khuych i lp D c tn hiu ra l 9 V. Nu tn hiu vo l 5 mV, th hskhuych i lbao nhiu ?

79. Mch khuych i lp D tiu tn cng sut l 140 mW bso snh v mch to sng tam gic.Mi MOSFET hbc st p l 0,25 V trng thi dn[on]. Mch khuych i lm vic thaingun 12 Vdc v cung cp 0,35 V n ti. Hy xc nh hiu sut.

Mc 2-13 Chuyn mch tng tbng MOSFET80. Mt chuyn mch tngtsdng MOSFET knh-nc GS(th) 4 VV . in p + 8 V c t n

cng. Hy xc nh tn hiu vo nh-nh ln nht c thp dng nu st p mng-ngunc bqua.

81. Chuyn mch tng tc sdng ly mu tn hiu c tn sln nht l 15 kHz. Hy xcnh tn sthp nht ca xung c p t vo cng ca MOSFET.

82. Mch tlm chuyn mch sdng t10 pF. Hy xc nh tn syu cu . . .

83. Vi tn s25 kHz, in tremulated l bao nhiu chuyn mch tnu 0,001 FC .


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Mc 2-14 Chuyn mch sbng MOSFET84. in p u ra ca bo bng CMOS l bao nhiu lm vic vi DD 5 VV , khi tn hiu u

vo l 0 V? Khi tn hiu vo + 5 V?

85. i vi mi thp tn hiu vo sau y, xc nh tn hiu ra cng NAND bng CMOS hotng vi DD 3,3 VV (a) A 0 VV ; B 0 VV

(b) A 3,3 VV ; B 0 VV

(c) A 0 VV ; B 3,3 VV

(d) A 3,3 VV ; B 3,3 VV

86. i vi mi thp tn hiu vo sau y, xc nh tn hiu ra cng NOR bng CMOS hot ngvi DD 3,3 VV

(a) A 0 VV ; B 0 VV

(b) A 3,3 VV ; B 0 VV

(c) A 0 VV ; B 3,3 VV

(d) A 3,3 VV ; B 3,3 VV 87. Lit k hai u im ca chuyn mch cng sut bng MOSFET so vi bng BJT.

Mc 2-15 Sai hng mch FET88. Mc dng ch th trn ng ho

hnh 7.58(a) gim t ngt v0. Saihng c thc l nh thno?

89. Mc dng chthtrn ng hhnh7.58(b) tngt bin ln 16mA. Saihng c thc l g?

90. Nu in p ngun cung cp mch hnh 7.58(c) ngunhin b thay i ln mc 20V, th s ch th trnammeter l bao nhiu?

91. in p o ti cc mng ca MOSFET mch hnh 7.66(a)l + 10V. o thtransistor cho thy bnh thng v cc ktni t tt. Nguyn nhn no c thgy ra so trn?


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92. in p o ti cc mng ca MOSFET mch hnh 7.66(b) l 0V. Mch khng c cc ngn mchv o thtransistor cho thy tt. Nguyn nhn no c thdxy ra nhiu nht vi so trn?

93. Hy cho bit cc du hiu c thc no mi saihng sau khi in p tn hiu c t vo mch hnh 8.46?

(a)Q1hmch tcc mng n cc ngun.

(b) 3R hmch(c) 2Cbngn mch(d) 3C hmch(e) Q2hmch tcc mng n cc ngun.

94. Nu 10 mV rmsinv mch hnh 8.46, th outv slbao nhiu tng ng vi cc h hng no sau y?

(a) 1C hmch(b) 4C hmch(c) mt ngn mch tcc ngun ca Q2vi t(d) Q2c mt in cc bhmch

BI TP NG DNG HTHNG

95. Tham kho hnh 8.58,v xc nh in pca sensor theo mi

gi trca pH sau y(a) 2

(b) 5

(c) 7

(d) 11

96. Da vo hc tuyn truyn t ca BF998 hnh 8.79, hy xc nh thay i DI khi inp phn cc cng 2 c thay i t6 V xung 1 V, v G1SV l 0 V. Mi c tuyn tng ng

vi mt gi tr G2SV .


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97. Xt mch hnh 8.61, v vc tuyn truyn t ( DI theo

G1SV ).

98. Tham kho hnh 8.79. Hy xc nh in p ra ca

mch hnh 8.61, nu G1S Sensor 0 VV V v 2Rc thay i vmc 50 k .

99. t in p 100mVrms c tns1kHz vo im o s 1 hnh 8.47. Ti im o s 5o c in p dc l 6,75V,nhng khng c in p acti im o ny. Hy xc

nh li duy nht trong mch.


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100. Githit li bi tp 99 ca mch hnh 8.47, c khc phc v in p tn hiu vo ctng ln mc 250 mV rms. Nu cc in p sau y l c o ti cc im o thquy nh, hyxc nh li c thc v tnh trng hng cn phi tin hnh sa cha mch l g?im o ths2: 250 mV rms

im o ths3: 800 mV rms

im o ths4: 530 mV rms

im o ths5: 2,12 V rms

101. Githit cc li trn y tromg mch hnh 8.47, c khc phc. Hy xc nh cc mc inp dc v ac sphi o c ti im o s5 nu transistor ca tng thnht c DSS 2,85 mAI

vgm= 2.2 mS v transistor ca tng th2 c DSS 5,10 mAI vgm= 2,6mS. Tn hiu vo l

100 mV rms.

BI TP VTHNG SCA FET

102. FET c shiu 2N5457 l loi cu kin g?

103. Tham kho phiu sliu hnh 7.14, xc nh cc thng ssau:(a) GS(off)V thp nht ca 2N5457.

(b)in p mng-ngun ln nht ca 2N5457.

(c) Mc tiu tn cng sut ln nht ca 2N5457 ti nhit mi trng l 25C.

(d) in p ngc cng-ngun ln nht ca 2N5458.

104. Tham kho phiu s liu hnh 7.14, xc nh mc tiu tn cng sut ln nht ca 2N5457 nhit mi trng 65C.

105. Tham kho phiu sliu hnh 7.14, xc nhgm0ca 2N5457 ti tn s1kHz.

106. Tham kho phiu sliu hnh 7.14, mc dng mng in hnh ca 2N5457 khi GS 0 VV l baonhiu?.


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107. Tham kho phiu sliu hnh 7.41, hy xc nh in p cng-ngun thp nht m MOSFETbt u dn dng?.

108. Tham kho phiu sliu hnh 7.41, mc dng mng l bao nhiu khi GS 10 VV ?

109. Tham kho phiu sliu hnh 7.52, xc nh dng mngIDchy trong 2N3797 khi GS + 3 VV Tnh DI tng ng vi GS - 2 VV .


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110. Tham kho phiu sliu hnh 7.52, hdn thun ln nht ca 2N3796 thay i trn khongtn stn hiu t1kHz n 1MHz l bao nhiu?

111. Tham kho phiu s liu hnh 7.52, hy xc nh gi trin hnh ca in p cng-nguntng ng khi 2N3796 chuyn sang ngng dn.


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112. FET c shiu 2N3796 l FET kiu g?113. Tham kho phiu sliu hnh 8.30, xc nh cc thng ssau:

(a)VGS(off)in hnh ca 2N3796.

(b)in p mng-ngun ln nht ca 2N3797

(c)Mc tiu tn cng sut ln nht ca 2N3797 ti nhit mi trng l 25C

(d)in p cng-ngun ln nht ca 2N3797

114. Tham kho phiu sliu hnh 8.30, xc nh mc tiu tn cng sut ln nht ca 2N3796 tinhit mi trng l 55C.

115. Tham kho phiu sliu hnh 8.30, xc nhgm0nhnht ca 2N3796 ti tn sl 1kHz.

116. Dng mng ca 2N3797 l bao nhiu khi GS +3,5 VV ?


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117. Dng mng c trng ca 2N3796 l bao nhiu khi c phn cc 0?118. Hskhuych i in p c thc ln nht ca mch khuych i ngun-chung bng 2N3796 l

bao nhiu vi D 2,2 kR ?

BI TP NNG CAO

119. Tnh DSV v GSV trong mch hnh 7.71, bng cch sdng cc gi trnhnht ca cc thng scn thit cho phiu sliu.

120. Tnh DI v GSV trong mch hnh 7.72.

121. Xc nh khong cc gi trim-Qc thc tnhnht n ln nht chomch hnh 7.71.

122. Tnh in p mng-ngun cho cc mch cm bin pH hnh 8.59,khi pH o c bng 5. Giscc bin trl c thit lp

to ra mc 4 V ti cc cc mng khi pH c o bng 7.

123. Thit kmch MOSFET vi phn cc 0, sdng 2N3797 hot ng bng ngun cung cp + 9Vdc to ra DSV bng 4,5V. Dng mng ln nht chy tngun l 1mA.


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124. Thit kmch bng E-MOSFET vi cc thng sphiu s liu nh sau: DS(on) 500 mAI @

GS 10 VV v GS(th) 1 VV . Sdng ngun cung cp dc +12V, vi phn cc phn p to ra

in p + 8V ti cc mng v dng ln nht tngun cung cp l 20mA.

125. MOSFET trong mt mch khuych i ngun-chung, n tng c khong cc gi trhdnthun t2,5 mS n 7,5 mS. Nu mch khuych i ghp tng bng tvi ti c ththay ic trong khong t4 kn 10 kv in trmng dc l 1,0 k, hy xc nh cc hskhuych i nhnht v ln nht.

126. Thit kmch khuych i sdng 2N3797 lm vic vi ngun cung cp l 24 V. in p mng-ngun dc in hnh cn phi xp x 12 V v hskhuych i in p in hnh cn phi vokhong bng 9.

127. Sa i li mch c thit kbi tp 126, c hskhuych i in p c ththit lp mc bng 9 cho bt ktransistor 2N3797 no c la chn mt cch ngu nhin.


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BI TP BSUNG PHN FET

128. Thit k mch khuych i chung cc ngun-Common Source (CS) bng JFET c RL =10k, VDD = 12V,Rin = 500k, vAv = - 2. Sdng mch hnh 4.16a. Chn im-Q l VDSQ=6V, VGSQ = - 1V,IDQ = 1mA, vgm = 2500S.

[p s: 1 2= 4,78 k; = 1, 22 k; = 509 k; = 27 M;& - 100D S iR R R R A ]

129. Thit kli mch khuych i CS bng JFET bi tp 128, nu dng transistor c VGSoff = - 4VvIDSS = 6mA.

[p s: 1 2 dc ac= 500 k; = ; =1,61 k; = 390 ; = 223 ;& - 100D S S iR R R R R A ]


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130. Thit kmch khuych i CD bng JFET (hnh 4.19) cho hskhuych i dng in bng15 cho ti l RL = 20k s dng VDD = 12V v Rin = 400k. S dng JFET knh-n cVGSoff = - 3V, vIDSS = 6mA. GisVDSQ = VDD/2 vIDQ = 0,4IDSS. Tnh trsca cc in trv hskhuych i in p ca mch khuych i.[p s: dc ac 1 2= 2,5 k; =1,25 k; = 676 k; = 980 k;& 0,75S S iR R R R A ]

131. Xc nh trsca cc in trv hskhuych i dng in chomch khuych i bootstrap bng JFET kiu SF theo cc yu cul Rin = 200k, RL = 20k, v VDD = 10V. im- Q c chnti: VDSQ = 5V,IDQ = 0,5mA, VGSQ = - 1,5V,gm = 4mS. Sdngmch hnh 4.21.[p s: G 1 2= 62,8 k; = 3 k; = 7 k; 9,3S S iR R R A ]


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132. Cho mch hnh P4.1a, vi JFET knh-nc thc cc thng sxp xbng phng trnh:iD= 0,5(4 + vGS)

2 mAvRS = 500, RD = 2k, Rin = 100k, IDQ = 5mA, v VDD = 20V. Hy xc nh cc thng sca mch sau:(a)VGSQ; (b)VD ; (c)VDSQ; (d)R1 v R2.[p s: 1 2 dc(a) - 0,84 V; (b) 10 V; (c) 7,5 V; = 109 k; =1,2 M; = 390 SR R R ]

133. Trong mch hnh 4.16a, khi c R1 = 21k, R2 = 450k, RS =500, RD = 1,5k, RL = 4k, v VDD = 12V, khi VDSQ = 4V, hy

xc nh cc thng ssau y:(a)IDQ; (b)VGSQ; (c)Rin; (d)Av khigm = 3,16mS; (e)Ai.


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134. Trong mch hnh 4.16a,RD = 2k,RL = 5k,Rin = 100k,RS =300, v VDD = 15V. Xc nh cc trscaR1 vR2 cn thit transistor lm vic mc 4mA khi VGSoff = - 4V v IDSS= 8mA.Tnh h s khuych i in p v dng in ca mch khuychi.

135. (a) Thit kmch khuych i chungcc ngun [Common-Source tcCS] (hnh P4.1) s dng JFETknh-p p ng cc thng syucu l Av = - 10 v Rin = 20k.Githit l im-Q c chn ti

IDQ = - 1mA, VDSQ = -10V, VGSQ= 0,5V.

(b)Tnh Ai, R1, R2, RS, v RD. (Davo c tuyn hnh P4.2. Lu rng c th c chia tch RSvmch rchoRS).[p s: c dc 2= 338 ; = 500 ; = 9,5 k; - 21,1; =Sa S D iR R R A R ]


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136 . Lp li bi tp 135 khi RL l 20k; c ghp vo cc mng qua mt tghp tng. Ch l, cthcn phi chn im-Q khc.

137. Thit kmch khuych i CS sdng MOSFET nhmch hnhP4.3. Cho RL = 1k, Av= - 1, Rin = 15k. im-Q c chnti VGSQ = 3V, IDQ = 7mA, VDSQ = 10V, trong gm = 2300S.Xc nh trscho tt ccc cu kin cn li.


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138. Thit kmch khuych i CS sdng JFET knh-n cho kiu mchnhhnh P4.4, vi Av= - 1, VDD = 12V,RL = 1k,Rin = 15k,

IDSS = 10mA, v VGSoff = - 4V. SdngIDQ =IDSS / 2.[p s: 2= 208 ; = 234 ; = 966 ; - 15; =Sac Sdc D iR R R A R ]

139. Thit kmch khuych i CS sdng JFET knh-n khi cRL =4k, Av = - 3, v Rin = 50k. Gi s l transistor s dng cVGSoff = - 4,2V vIDSS = 6mA. Sdng mch nh hnh P4.4 viVDD = 20V. Xc nhAi.


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140. Thit kmch khuych i CS bng JFET knh-n cAV = -2,Ai =-20, VDD = 12V, v RL = 5k. Xc nh tr sca tt c cc cukin v mc cng sut nh mc ca transistor. (mch c thcn

phi thay i p ng thit k). Transistor c chn c:VGSoff = - 5V v IDSS = 8mA. S dng IDQ = 0,4IDSS v VDSQ =VDD/2. Tham kho mch nhhnh P4.4.

141. Thit kmch khuych i CS bng JFET knh-p viAV = - 4,Ai= - 40, RL = 8k, v VDD = - 16V. Transistor c chn cVGSoff = 3V v IDSS = - 7mA, s dng IDQ = 0,3IDSS v VDSQ =V

DD/2. Sdng mch hnh P4.4. Xc nh cng sut nh mc ca

transistor.

[p s: =1,36 V; = 2,55 mS; = 648 ;GSQ m SdcV g R

trans 2=174 ; =16,8 mW; =SacR P R ]


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142. Thit kmch khuych i CS bng JFET knh-p vi ti l 5k,sdng mch tng t nh hnh P4.4. Cho VDD = - 20V,AV= - 2, Ai = - 20, VGSoff = 6V v IDSS = - 5mA. Xc nh cng sutnh mc ca transistor.

143. Thit k mch khuych i chung cc ngun (CS) bngMOSFET knh-n, s dng transistor 3N128 (phlc D trang 90-

92) cho ti l 10kvi hskhuych i in p Av = - 10. Sdng mch hnh P4.3. Chn im-Q khiRin > 10k, bng cchsdng hc tuyn thhin theo cc thng sk thut trangcui ca phn bi tp ny.


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144. Thit k mch khuych i bng MOSFET knh-n, chung ccngun (CS) s dng transistor 3N128 (ph lc D trang 92-94)cho ti l 2kvi Av = - 4 v Rin > 100k. Gis rng, im-Q c chn l VGSQ = - 0,6V, VDSQ = 10V, IDQ = 10mA, VDD= 20V. Xem mch hnh P4.3.[p s: 2= 940 ; = 25 ; = 60 ; =D Sac SdcR R R R ]

145. Phn tch mch khuych i CS bng JFET knh-n nh mch hnh P4.5, khi c ti l 20k, RD = 8k, VDD = 24V, v Rin =50k. Chn im-Q c VGSQ = - 1,5V, VDSQ = 12V, IDQ = 1mA,

vgm = 2,83mS. Hy tnhAi,Avv trsca tt ccu kin.


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146. Nu RS mch hnh P4.4, c r mch bng t, th h skhuych i in p l bao nhiu ? Gis rng im-Q cchn c gm = 1,5mS,RD = 3,2k, vRL = 5k. Xc nh hskhuych i dng in khi RS = 500, R1 = 200k, v R2 =800k.

147. Hskhuych i in p Av ca mch hnh P4.4, l bao nhiunu tn hiu c cung cp vo mch khuych i c in trcangun in p l Ri = 10k? ChoRD = 10k, vRL = 10k,RS =500,gm = 2mS,R1 = 25k, vR2 = 120k.


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148. Cho mch nhhnh P4.6, gisrngRS c rmch bng mtt in. VDD = 15V, RD = 2k, RL = 3k, RS = 200, R1 =500k,IDSS = 8mA, v VGSoff = - 4V. Hy xc nhAv,Ai,Rin, vim-Q cho mch khuych i.

[p s: = - 0,94 V; = - 3,67; = - 612GSQ v iV A A ]

149. Cho mch hnh P4.6, gisrng VDD

= 20V;RD

= 2k;RL

= 10k;

RS = 200; R1 = 1M; IDSS = 10mA, v VGSoff = -5V. Hy xc

nh im-Q,Av,Ai,Rin, v cho mch khuych i.


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150. Cho mch hnh P4.6, gisrng VDD = 20V,RD = 2k,RL = 6k,RS = 100, R1 = 1M, IDSS = 10mA, v VGSoff = - 5V. Hy xc

nh im-Q,Av,Ai,Rin, v cho mch khuych i.

151. Cho mch khuych i CS nh hnh P4.1a, s dng JFET cIDSS = 2mA, v gm0 = 2000S. Nu tr s ca RD = 10k, RS =200, th h s khuych i in p Av l bao nhiu i vi cc

gi trca VGSQ sau y?(a) VGSQ =1V; (b)VGSQ =0,5V; (c)VGSQ = 0V.[p s: (a) - 8,33 V;(b) - 11,5;(c) - 14,3 ]


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152. Mch khuych i CS hnh P4.6, vi transistor c VGSoff = -4V, IDSS = 4mA, v rDS = 500. Nu RD = 2k, RL = 4k, v

RS = 200, th h s khuych i in p Av ca mch l baonhiu vi VGSQ = - 1V ?Av snh thno khi rDS t n v cng?

153. Thit kmch khuych i CS bng MOSFET knh-n nhmch hnh P4.3, khi c RL = 4k, Av = - 5, v Ai = - 10. Gi s rng,im-Q chn c VDSQ = 10V, VGSQ = 4V, IDQ = 2mA, v gm =4000S.


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154. Cho mch nhhnh P4.7, cRi = 50k,R1 = 100k,R2 =800k,RD = 4k, RL = 6k,RS = 200, v VDD = 20V,

xc nh cc thng s sau khi s dng FET c VDSQ =6V, gm = 2,5mS:

(a)IDQ, VGG, v VGSQ; (b)Av,Rin, vAi.[p s: (a) = 1,55 V; (b) - 3,84; (c) 88,9 k ; (d) - 88,9GSQV ]

155. Cho mch nhhnh P4.7, nu loi bR2, transistor FET

lm vic mc dng l 2mA. Tr s ca cc cu kin lRi = 100k, R1 = 400k, RD = 3k, RL = 5k, v VDD =12V. Xc nh cc thng s sau khi sdng transistor c

IDSS = 8mA, v VGSoff = - 4V:

(a)RS; (b)Av,Rin, vAi.


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156. Thit k mch khuych i lp li-cc ngun (SF)bng JFET knh-p nhhnh P4.8, viRin = 20k, nhn c h s khuych i in p Av gn

bng 1. Tnh Ai, R1, R2, v RS. S dng h ctuyn cho hnh P4.2.

157. Lp li bi tp 156, khi c ti l 20kc ghp tvi mch khuych i.[p s: 1 2= 18,2 k ; = 0,92; = 37 k ; = 43,5 kS iR A R R ]


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158. Thit kmch khuych i bng MOSFET kiu mng-chung (CD)khi cRL = 100,Ai = 200, vRin = 100k. Sdng transistor cVGSoff = - 6V vIDSS = 20mA. Xc nhAv v gi trca tt cccin tr. Mch sdng hnh P4.9.

159. Thit kmch khuych i CD bng MOSFET knh-n, trong Rin= 120k, Ai = 100, RL= 500, VDD = 20V, v chn transistor cVGSoff = - 5V v IDSS = 15mA. Sdng mch hnhP4.9, viIDQ= 0,6IDSS v VDSQ = VDD/2.


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160. Thit k mch khuych i lp li cc ngun (SF) s dng JFET knh-n cho h skhuych i dng l 100 v in trvo l 500k. Ti l 2k. Chn im-Q theo cc tham sl: VDSQ = 8V,IDQ = 5mA, VGSQ = - 1V, vgm = 4mS. Xc nh cc in tr, hskhuych iin p v vmch khi VDD = 10V.[p s: 1 2= 556 k ; = 5 MR R ]

161. Lp li bi tp 160 nhngbng transistor khc vi gi trca cc thng sl:VGSoff = -3V,IDSS = 10mA.


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162. Thit k mch nh hnh 4.21, khi c VDD = 16V v RL= 8k. S dng transistor c VGSoff = - 3,33V, IDSS =10mA. Xc nh ton b trsca cu kin, Ai, v Av khicRin = 12k.

163. Da vo bi tp 162, xc nh ton btrsca cu kin,Ai, vAv khi cRin = 200k.[p s: 1 2= 50,9 k ; = 21,1; = 0,844; = 200 ; = 1400G i v S S R A A R R ]


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Phlc D: Trang sliu ca hng chto(Appendix D: Manufacturers Data Sheets)


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TM TT NI DUNG VBJT & MCH

3-1. BJT (Bipolar junction transistor) c cu to bng ba vng: base, collector, v emitter. BJT c hai tip gippn, tip gip base-emitter v tip gip base-collector. Dng in chy trong BJT bao gm cdng cc in ttdo v dng cc ltrng, thut ng

bipolarthhin nh vy.

Vng base l rt mng v c pha tp long so vi cc vng collector v emitter. Hai loi BJT l npnvpnp.3-2. lm vic nh mt bkhuych i, tip gip base-emitter cn phi c phn cc-thun v

tip gip base-collector cn phi c phn cc-ngc. iu ny c gi lphn cc thun-ngc.

Ba dng in chy trong transistor l dng base ( BI ), dng emitter ( EI ), v dng collector

( CI ).

BI l rt nhso vi CI v EI .

3-3. Hskhuych i dng dc ca transistor l tsca CI i vi BI v c k hiu l DC . Cc

trsin hnh trong khong tdi 20 n vi trm. DC thng c xem nh FEh trang sliu ca transistor.

Tsca CI vi EI c gi l DC . Cc gi trin hnh trong khong t0,95 n 0,99.

C sbin thin DC theo nhit v cng nh tmt transistor ny n transistor khc

cng mt loi transistor.3-4. Khi transistor c phn cc-thun, hskhuych i in p phthuc vo in tremitter

trong (in trni) v in trcollector ngoi. Hskhuych i in p l tsca in p ra vi in p vo. Cc in trtrong ca transistor c thhin bng chin thng r.

3-5. Transistor c thlm vic nh mt chuyn mch in tvng ngng dn v dn bo ha. vng ngng dn, chai tip gippnu c phn cc-ngc v vc bn khng c dng

collector. Xt mt cch l tng, transistor ng vai tr nh mt chuyn mch h giacollector v emitter.

vng bo ha, chai tip gippnu c phn cc-thun v dng collector l ln nht. Xtmt cch l tng, transistor ng vai trnh mt chuyn mch kn gia collector v emitter.

3-6. Trong phototransistor, dng base c to ra bng nh sng chiu vo. Phototransistor c thl cu kin hai-in cc hoc cu kin ba in-cc. Optocoupler gm mt LED v photodiode hoc phototransistor. Optocoupler c sdng cc mch cch ly vin.

3-7. C nhiu kiu ng vtransistor bng vnha [plastic], vkim loi, hay vgm. Hai kiu vc bn l kiu xuyn-l[through-hole] v dn bmt.

3-8. Nn kim tra transistor trong-mch trc khi tho transistor. Cc li thng thng trong cc mch transistor l cc tip gip hmch, DC thp, cc dng r

vt qu mc cho php, v hmch hoc ngn mch bn ngoi transistor trong bng mch.


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E C BI I I (3-1) Cc dng in ca transistor.

CDC

B

I

I (3-2) Hskhuych i dng DC.

BE 0,7 VV (3-3) in p base-emitter (silicon).

BB BEB

B

V VI

R

(3-4) Dng base.

CE CC C C-V V I R (3-5) in p collector-emitter (emitter-chung).

CB CE BE-V V V

(3-6) in p collector-base.C

v

e

RA

r' (3-7) Hskhuych i in p gn ng (khng ti).

CE(cutoff ) CCV V (3-8) iu kin ngng dn.

CC CE(sat)

C(sat)

C

V VI

R

(3-9) Dng collector bo ha.

C(sat)

B(min)

DC

II

(3-10) Dng base nhnht transistor dn bo ha.

C DCI I (3-11) Dng collector ca phototransistor.


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Cu hi vcu to , nguyn l & mch BJT

1. Ba in cc ca BJT c gi l(a)p, n, p (b) n, p, n (c)u vo, u ra, t (d)base, emitter, collector.

2. Trong cu to ca transistorpnp, cc vngpl(a) base v emitter (b) base v collector (c) emitter v collector

3. lm vic nh mt bkhuych i, base ca transistor npncn phi(a) dng so vi emitter(b) m so vi emitter(c) dng so vi collector (d) 0V

4. Dng emitter slun lun(a) ln hn so vi dng base (b) nhhn so vi dng collector(c) ln hn so vi dng collector (d) gm c(a) v (c)

5. DC ca transistor l . . . . . . . . . ca transistor(a) hskhuych i dng (b) hskhuych i p

(c) hskhuych i cng sut (d)in trtrong

6. Nu CI ln hn 50 ln so vi BI , th DC bng

(a) 0,02 (b) 100 (c)50 (d)500

7. in p xp x trn tip gip base-emtter khi c phn cc thun ca BJT silicon l(a) 0V (b) 0,7V (c) 0,3V (d) BBV

8. Trng thi phn cc thun cho transistor c sdng nh mt bkhuych i tuyn tnh

c gi l(a) thun-ngc (b) thun-thun (c) ngc-ngc (d) phn cc collector

9. Nu in p ra ca mch khuych i bng transistor l 5 V rms v in p vo l 100mV rms,th hskhuych i in p l(a)5 (b) 500 (c)50 (d)100

10. Khi chin thng r'c sdng lin quan n transistor, th n tng ng vi(a)in trnh (b) in trca dy dn;(c)in trtrong ac (d)in trngun.

11. Trong mt mch khuych i cho, C = 2,2 kR ; v 20 er' , th hskhuych i in

p bng(a)2,2 (b) 110 (c) 20 (d)bin tr

12. Khi c phn cc hot ng vng ngt v bo ha, transistor c chc nng nh mt(a)bkhuych i tuyn tnh (b) chuyn mch (c) tin c ththay i (d)bin tr

13. vng ngng dn, CEV sl

(a)0V (b) thp nht (c)cao nht

(d)bng vi CCV (e) c(a) v (b) (e) c(c) v (d)


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14. vng bo ha, CEV l

(a)0,7V; (b)bng vi CCV ; (c)thp nht; (d)cao nht.

15. bo ha BJT cn phi c(a) B C(sat)I I ;(b) B C(sat) DCI I ;(c) CCV cn phi thp nht=10V; (d)emitter phi ni t

16. Khi BJT hot ng vng bo ha, dng base tng s(a) lm tng dng collector; (b) dng collector khng nh hng;(c) lm gim dng collector; (d)transistor chuyn sang ngng dn.

17. Trong mt phototransistor, dng base l(a) c thit lp bng in p phn cc; (b) tlthun vi cng nh sng;(c) tlnghch vi cng nh sng; (d)ngoi yu ttrn.

18. Phng trnh gia dng collector v dng base c to ra do nh sng trong phototransistorl

(a) C DCI I ; (b) C DCI I ; (c) CI I ; (d) DC2CI I .

19. Mt optocoupler thng bao gm(a) 2 LED; (b) mt LED v mt photodiode;(c) mt LED v mt phototransistor; (d)c(b) v (c).

20. Trong mch khuych i nu tip gip base-emitter bhmch, th in p collector l(a) CCV ; (b) 0V; (c)khng xc nh; (d)0,2V.

21. Khi o bng DMM trn mt tip gip ca transistor bt (hmch) sthhin(a)0 V; (b) 0,7V; (c)OL; (d) CCV .

22. Trsdng collector ln nht trong transistor c phn cc l(a) DC BI ; (b) C(sat)I ; (c) ln hn dng EI ; (d) E BI I .

23. Xt mt cch l tng, ng ti dc l ng thng vtrn hc tuy

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Q&P Electronic Devices (2014)