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TIMARISPVD Cluster Tool for Magnetic Storage &
Semiconductor Wafer Production
Smart Solutions to Drive the F uture.
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TIMARIS – PVD Cluster Tool from SINGULUS
SINGULUS TECHNOLOGIES(SINGULUS), founded in 1996, continues to expand its activities in the segments Semiconductor, Solar and Optical Disc.
SINGULUS’ business unit Nano Deposition Technologies is a renowned manufacturer of advanced thin-film deposition equipment for MRAM and Thin-Film Head production. It is the trusted partner in the respective industry and extends its leadership in the thin-film deposition technology for Semiconductor applications.
SINGULUS has already established and qualified the second generation of the TIMARIS PVD Cluster Tool platform in the market and is offering a complete portfolio of process modules for different applications.
As today, seven different process modules are available to configure a TIMARIS system according to customer needs. These modules include the Multi-Target-Module (MTM), Oxidation-Process-Module (OPM), Pre-Clean-Module (PCM), Combi-Process-Module (CPM),
Flexible-Target-Module (FTM) and Static-PVD-Module (sPVD-M) as well as the new Rotating-Substrate-Module (RSM).
The TIMARIS PVD modules (MTM, FTM, RSM, sPVD-M) incorporate the full scope of sputtering techniques as: DC magnetron sputtering, pulsed DC magnetron sputtering and RF magnetron sputtering as well as combinations of these modes are selectable by recipe.
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Thin-Film Heads (TFH) _ High Moment Material (Writer Material) _ TMR (Reader Material) _ GMR (Reader Material) _ Deposition of seed and gap layers
Semiconductor_ MRAM_ Sensors_ High-k dielectrics_ Metal gates_ Phase-change material deposition_ SAW/BAW film deposition_ In-circuit Inductors
All TIMARIS applications require the deposition of ultra-thin metallic and insulating film stacks down to a thickness of one (1) nanometer and below with very precise material thickness and high uniformity specifications.
The MTM is the key component of the TIMARIS platform; it incorporates the Linear Dynamic Deposition (LDD, US patent US 7,799,179 B2) technology in combination with ten (10) sputter targets in one vacuum chamber.
The FTM module uses Linear Dynamic Deposition in combination with up to four cathodes. The LDD technology is especially designed for deposition of ultra-thin films, magnetic films, high-quality metallic, conductive and insulating films and is the key to deliver world class material uniformity across large wafer sizes, combined with an exceptional precise control of ultra-thin layer thickness down to 1 % of a nanometer.
Multi Target Module
Top: Target Drum with
10 rectangular cathodes;
Drum design ensures
easy maintenance;
Bottom: Main part of the
chamber containing LDD
equipment
Oxidation Module
Low Energy Remote
Atomic Plasma Oxidation;
Natural Oxidation;
Soft Energy
Surface Treatment
Cassette Module
(according to Customer
Specification)
Soft-Etch Module
(PreClean, Surface
Treatment)
Transport Module
(UHV wafer handler)
Ultra-High-Vacuum Design:
High Throughput (e.g. MRAM):
High Effective Up-time:
Reliability:
Base Pressure < 5*10-9 Torr(Deposition Chamber)
up to 18 Wafer/h (see page 11)
Maintenance friendly Design
Solid and well Engineered Design,no fast moving Parts
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Linear Dynamic Deposition (LDD)
Deposition Technique: Linear PVD Magnetron and linear movement of wafer
Linear Dynamic Deposition (LDD)⋅_ Short target-substrate distance: _ Best coating efficiency _ Low cost of owner ship
_ Thickness adjusted by wafer speed: _ Precise thickness control & repeatability _ Ultra thin film < 0.1 nm; smallest thickness step: < 0.01 nm
_ Special LDD capabilities _ Deposition of thickness wedges _ Preparation of concentration gradients
_ Multi-directional coating: _ Smooth films and interfaces
_ Stationary Aligning Magnetic Field (AMF): _ Magnetic pre-alignment of easy axis direction
_ Leakage field of cathode parallel to wafer travel direction: _ Ideal symmetry for magnetic film applications _ Robust and reliable design
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Multi-Target-Module with 10 DC/RF Cathodes
Multiple film stack deposition, without the need to break ultra-high vacuum, is one of the key advantages of the MTM process module. Additional features as wafer heating for hot substrate deposition or a collinear Aligning Magnetic Field (AMF) can be activated to align the magnetic Easy Axis during deposition of ferromagnetic films.
The Linear Dynamic Deposition (LDD) technology enables the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. Both features allow a very
cost effective development of film stacks and accelerate the devices development.
The LDD technology is the key to delivering world class material unifor-mity across large wafers and excepti-onal precise control of ultra thin layer thickness down to 1 % of a nanometer.
Details:_ DC/RF magnetron _ All sputter deposition modes selectable by recipe for all 10 cathodes_ LDD technology_ RF bias option_ Ultra-High-Vacuum technology, base pressure < 5*10-9 Torr _ Wafer heating and cooling
Multi-Target-Module
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Flexible-Target-Module with 4 DC/RF Cathodes
The Flexible-Target-Module (FTM) incorporates Linear Dynamic Deposition (LDD) technology in combination with up to four sputter targets in one vacuum chamber.The FTM incorporates the same functionalities like the Multi-Target- Module (MTM) as the substrate heating, the Aligning Magnetic Field and the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. The only difference of the FTM is the number of targets.
Details:_ DC/RF magnetron_ All sputter deposition modes selectable by recipe for all 4 cathodes_ LDD technology _ RF bias option_ Ultra-High-Vacuum technology, base pressure < 5*10-9 Torr_ Wafer heating and cooling
Flexible-Target-Module (FTM)
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Rotating-Substrate-Module (RSM)
The Rotating-Substrate-Module (RSM) is a dedicated PVD module for R&D for different Semiconductors and other applications.
Essential technical features are:_ Up to 12 PVD cathodes in one chamber_ Rotating substrate deposition_ Co-sputtering_ DC-, pulsed DC-, RF-sputtering_ Wafer heating_ Base pressure < 10-8 Torr_ In-situ aligning magnetic field_ Alternative equipment _ Ion source _ Surface metrology_ Low R&D costs
Rotating-Substrate-Module (RSM)
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Pre-Clean-Module
The Pre-Clean-Module (PCM) is used to clean the wafer prior to deposition. This is a standard technique employing sputter etch technology by applying RF power to the wafer. Typically the process removes residual water and other molecules and native oxides by adjusting the etching process parameters. Optionally, this module can also be equipped with an ECWR plasma source. This additional plasma source provides a more flexible etching
process (higher etch rates, lower etching energies). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the etching.
Details:_ Wafer cleaning, removal of native oxides by sputter etch_ ECWR plasma source as option_ Variable distance between and ion source_ Ultra-High-Vacuum technology, base pressure < 1*10-8 Torr
Pre-Clean-Module PCM)
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Oxidation-Process-Module
The Oxidation-Process-Module (OPM) is required to oxidize ultra-thin metallic films into insulating films of very high quality. Such films are required in Tunnel Magneto Resistance layer stacks as tunneling barriers.
The barrier material of choice is nowadays MgO, but Al2O3 and other materials have been considered. The oxidation can be performed by using a remote plasma provided by a ECWR plasma source. This source generates oxygen ions and radicals of very low adjustable energy. Alternatively, the oxidation can be performed by the so-called natural oxidation by exposing the metal film
to pure oxygen of low pressure (10 Torr down to 0.1 m Torr). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the oxidation. Other applications for the OM are surface treatment of wafers by different activated gases (e.g. N2).
Details:_ Low energy remote plasma oxidation _ Natural oxidation_ Surface treatment by low energetic ions_ Variable distance between substrate and ion source_ Ultra-High-Vacuum technology, base pressure < 1*10-8 Torr
Oxidation-Process-Module (OPM)
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Static-PVD-Module
The Static-PVD-Module (sPVD-M) comprises a standard magnetron cathode with optimized target utilization for high rate sputter deposition of metallic and non-conducting materials for multiple applications. DC magnetron as well as RF magnetron sputter modes are selectable through a recipe menu. The module is envisaged to be used for deposition of films with high deposition rate that do not require the extremely high uniformity that can be achieved by the LDD technology.
Details:_ DC and RF sputter deposition selectable by recipe _ Variable distance between substrate and sputter target_ Ultra-High-Vacuum technology, base pressure < 1*10-8 Torr
Static-PVD-Module (sPVD-M)
Combination-Process-Module
The Combination-Process-Module (CPM) comprises both technologies, of oxidation and pre-clean in one module. This is a cost-efficient option, since only one module for two process steps is required. It is mainly envisaged for R&D purposes, where a high throughput is of less importance. The process performance is identical with the Oxidation- Module and the Pre-Clean-Module.
Details:_ Low energy remote plasma oxidation _ Natural oxidation_ Surface treatment by low energetic ions_ Wafer cleaning, removal of native oxides by sputter etch_ Variable distance between substrate and ion source_ Ultra-High-Vacuum technology, base pressure < 1*10-8 Torr
Combi-Process-Module (CPM)
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Typical TIMARIS configuration for 300 mm MRAM wafer production with full throughput, consisting of:
_ 2 Multi-Target-Modules_ 1 Oxidation-Module_ 1 Pre-Clean-Module_ 1 Transport Module (Brooks) including two FOUP Loadports_ Multiple wafer handling_ Throughput: up to 20 Wafer* _ Software integration: GEM/SECSII Interface
* standard MRAM layer stack
Typical TIMARIS configuration for 150/200 mm Thin-Film Head wafer production. The footprint shown is for a tool for TMR (GMR) sensor fabrication and consists of:
_ 1 Multi-Target-Module_ 1 Oxidation-Module_ 1 Pre-Clean Module_ 1 Transport Module (Brooks)_ Multiple wafer handling_ Throughput: 9 wafers for a standard TMR layer stack_ Software integration: GEM/SECSII Interface_ Variants: HMM film deposition (no oxidation module)
300 mmWafer
150 mm200 mmWafer
TIMARIS configuration for 300 mm MRAM and semiconductor wafer production, consisting of:
_ 1 Multi-Target-Module_ 3 Flexible-Target-Modules_ 1 Pre-Clean-Module_ 1 Oxidation-Module_ 1 Transport Module (Brooks) including three FOUP Loadports_ Multiple wafer handling_ Software integration: GEM/SECSII Interface
Typical TIMARIS configuration for R&D purposes and/or low volume production. All wafer up to 300 mm wafer can be handled. The footprint shown consists of:
_ 2 Rotating-Substrate-Modules_ 1 Combi-Process-Module_ 1 Transport Module
all Waferup to
300 mm
all Waferup to
300 mm
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Worldwide Sales & Service Network
SINGULUS Headquarters
SINGULUS STANGL SOLAR
Sales & Service Company
Subsidiary
SINGULUS Serves Customers Worldwide
SINGULUS Headquarters, Kahl/Main SINGULUS STANGL SOLAR, Fürstenfeldbruck
05/2
012
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HeadquartersSINGULUS TECHNOLOGIES AGHanauer Landstrasse 103D-63796 Kahl, GermanyTel. +49 6188 440-0Fax +49 6188 [email protected]
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