Publikációs és hivatkozási jegyzékem 2013-04-06

A jegyzék időrendben visszafelé haladva tartalmazza a publikációk és a független hivatkozások adatait, valamint az idézeteket a következő bontásban:

A. Publikációk nemzetközi tudományos folyóiratokban: 42 tétel, 465 hivatkozásB. Nemzetközi konferencia előadások: 67 tétel, C. Publikációk hazai szakmai, tudományos folyóiratokban: 22 tétel, 2 hivatkozásD. Konferencia előadások: 15 tétel,E. Egyéb közlemények (diplomaterv, értekezés, szakkönyv, szakkönyv fejezet, jegyzet,

jegyzet részlet, tanulmány, szabadalom): 12 tétel, 2 hivatkozás

A publikációk (nagybetű+sorszám szerint megkülönböztetve) és a hivatkozások elkülönítését megkönnyíti az előbbiek vastagbetűs szedése. A hivatkozások a publikációk sorszámát is viselik, saját sorszámukkal együtt (nagybetű+sorszám-c+sorszám). A hivatkozások után a --" "-- jelek között szerepelnek az adott publikációra vonatkozó idézetek. Az idézetek betűről betűre követik az eredeti szöveget, (a betűzési hibákkal együtt, Mizei, Miszei), az eredeti cikk így visszakereshető.

Különösen az EUROSENSORS konferenciákra jellemző, hogy az elfogadott előadások anyaga rövid formában a konferenciára megjelenik, de a teljes anyagból folyóiratcikk is készül. Ezért szerepelhetnek azonos címek az A. és B. rovatok alatt.

A. Publikációk nemzetközi tudományos folyóiratokban

A42 Enikő Bándy, Árpád Földváry, János Mizsei: Semitransparent monocrystalline solar cells manufactured by laser cutting and anisotropic etching MICROSYSTEM TECHNOLOGIES (2013) 1-8

A41 J Mizsei, A Czett: Electrical characterization of surface and interface potentials on SiC Applied Surface Science 258 (2012) 8343-8348

A40 J. Mizsei, A.E. Pap, K. Gillemot, G. Battistig: Effect of deuterium on passivation of Si surfacesApplied Surface Science 256 (2010) 5765-5770

A39 Imre Miklós Szilágyi, Sami Saukko, János Mizsei, Attila L. Tóth, János Madarász, György Pokol: Gas sensing selectivity of hexagonal and monoclinic WO3 to H2SSolid State Sciences 12 (2010) 1857-1860

A38 László Juhász, János Mizsei: A simple humidity sensor with thin film porous alumina and integrated heating. PROCEDIA ENGINEERING 5 (2010) 701-704

A37 L. Juhász, J. Mizsei: Humidity sensor structures with thin film porous alumina for on-chip integration Thin Solid Films 517 (2009) 6198-6201

A37-c3. Murali KR, Thirumoorthy P.: Characteristics of sol-gel deposited alumina films JOURNAL OF ALLOYS AND COMPOUNDS 500 (1) (2010) pp.93-95

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A37-c2. Yang MZ, Dai CL, Lu DH.: Polypyrrole Porous Micro Humidity Sensor Integrated with a Ring Oscillator Circuit on Chip

SENSORS 10 Issue: (11) (2010) pp.10095-10104

A37-c1. Larsson, O., Wang, X., Berggren, M., Crispin, X.: Proton motion in a polyelectrolyte: A probe for wireless humidity sensors 

SENSORS AND ACTUATORS B-CHEMICAL 143 (2), (2010) pp. 482-486

--”Humidity sensors based on other technologies and materials, e.g. thin films of aluminum oxide [A37] and nanowires [ ], display very good sensor characteristics. However, these sensors are not passively operated, cannot be readout in a wireless manner and are not compatible with low-cost manufacturing techniques.”—

A36 P. Tomkiewicz, S. Arabasz, B. Adamowicz, M. Miczek, J. Mizsei, D.R.T. Zahn, H. Hasegawa, J. Szuber: Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation,Surface Science 603 (2009) 498-502

A35. Imre Miklós Szilágyi, Sami Saukko, János Mizsei, Péter Király, Gábor Tárkányi, Attila L. Tóth, András Szabó, Katalin Varga-Josepovits, János Madarász, György Pokol: Controlling the composition of nanosize hexagonal WO3 for gas Sensing, Materials Science Forum, 589 (2008) 161-166

A34. Imre Miklos Szilagyi, Janos Madarasz, György Pokol, Peter Kiraly, Gabor Tarkanyi, Sami Saukko, Janos Mizsei, Attila L.Toth, Andras Szabo, Katalin Varga-Josepovits: Stability and controlled composition of hexagonal WO3, CHEMISTRY OF MATERIALS    20    (2008)   4116-4125 

A34-c10. Salmaoui S, Sediri F, Gharbi N.: Characterization of h-WO3 nanorods synthesized by hydrothermal process POLYHEDRON Volume: 29 Issue: 7 Pages: 1771-1775 Published: MAY 10 2010

A34-c9. Phuruangrat A, Ham DJ, Hong SJ, et al.: Synthesis of hexagonal WO3 nanowires by microwave-assisted hydrothermal method and their electrocatalytic activities for hydrogen evolution reaction JOURNAL OF MATERIALS CHEMISTRY Volume: 20 Issue: 9 Pages: 1683-1690 Published: 2010

A34-c8. Sadakane M, Sasaki K, Kunioku H, et al.: Preparation of 3-D ordered macroporous tungsten oxides and nano-crystalline particulate tungsten oxides using a colloidal crystal template method, and their structural characterization and application as photocatalysts under visible light irradiation JOURNAL OF MATERIALS CHEMISTRY Volume: 20 Issue: 9 Pages: 1811-1818 2010

A34-c7. Le Houx N, Pourroy G, Camerel F, et al.: WO3 Nanoparticles in the 5-30 nm Range by Solvothermal Synthesis under Microwave or Resistive Heating JOURNAL OF PHYSICAL CHEMISTRY C Volume: 114 Issue: 1 Pages: 155-161 JAN 14 2010

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A34-c6. Huirache-Acuna R, Pawelec B, Rivera-Munoz E, et al.: Comparison of the morphology and HDS activity of ternary Co-Mo-W catalysts supported on P-modified SBA-15 and SBA-16 substrates APPLIED CATALYSIS B-ENVIRONMENTAL Volume: 92 Issue: 1-2 Pages: 168-184 OCT 19 2009

A34-c5. Huirache-Acuna R, Paraguay-Delgado F, Albiter MA, et al.: Synthesis and characterization of WO3 nanostructures prepared by an aged-hydrothermal method MATERIALS CHARACTERIZATION Volume: 60 Issue: 9 Pages: 932-937 SEP 2009

A34-c4. Zhao D, Chen CC, Yu CL, et al: Photoinduced Electron Storage in WO3/TiO2 Nanohybrid Material in the Presence of Oxygen and Postirradiated Reduction of Heavy Metal Ions JOURNAL OF PHYSICAL CHEMISTRY C Volume: 113 Issue: 30 Pages: 13160-13165 JUL 30 2009

A34-c3. Shibuya M, Miyauchi M: Efficient electrochemical reaction in hexagonal WO3 forests with a hierarchical nanostructure CHEMICAL PHYSICS LETTERS Volume: 473 Issue: 1-3 Pages: 126-130 APR 29 2009

A34-c2. Debnath T, Roy S, Ruscher C, et al.  Synthesis and characterization of niobium-doped potassium tetragonal tungsten bronzes, K (x) Nb (y) W1-y O-3  JOURNAL OF MATERIALS SCIENCE  44  1  179-185  JAN 2009

--„HTB phases of KxWO3 by XPS spectroscopy and reported only the presence of W5? and W6? states of W. The formation of W4? state has been discussed recently for (NH4)0.33-xWO3-y type compounds [.., A34].”--

A34-c1. Sadakane M, Sasaki K, Kunioku H, et al.  Preparation of nano-structured crystalline tungsten(VI) oxide and enhanced photocatalytic activity for decomposition of organic compounds under visible light irradiation  CHEMICAL COMMUNICATIONS  48  6552-6554  2008

--„Powder X-ray diffraction (XRD) analysis and Raman spectroscopy revealed that a mixture of orthorhombic (JCPDS 20-1324) and monoclinic (JCPDS 43-1035) WO3 was formed by calcination at 673 K (entries 1, 5, and 9), whereas pure monoclinicWO3 was formed at higher calcination temperatures (Fig. S1, S2w) [A34].”--

A33. J. Mizsei: Gas sensor applications of porous Si layers, Thin Solid Films 515 (2007) 8310–8315

A33-c1. F. Razi, F. Rahimi, A. Iraji zad, Fourier transform infrared spectroscopy and scanning tunneling spectroscopy of porous silicon in the presence of methanolSENSORS AND ACTUATORS B-CHEMICAL 132 (1) 40-44 28 MAY 2008

A32. János Mizsei: Silicon surface passivation by static charge,

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Applied Surface Science, 252 (2006) 7691-7699

A32-c5 Kalicinski S, Tilmans HAC, Wevers M, et al.:A new characterization method for electrostatically actuated resonant MEMS: Determination of the mechanical resonance frequency, quality factor and dielectric charging SENSORS AND ACTUATORS A-PHYSICAL 154 (2) (2009) pp. 304-315

A32-c4. Tolstikhina AL, Gainutdinov RV, Zanaveskin ML, et al.: Features in Atomic Force Microscopy Studies of Dielectric Surfaces JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES   Volume: 2   Issue: 5   Pages: 722-726   Published: OCT 2008

A32-c3. Kalicinski S, Wevers M, De Wolf I: Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, SEP 29-OCT 02, 2008 Maastricht, NETHERLANDSMICROELECTRONICS RELIABILITY   Volume: 48   Issue: 8-9   Special Issue: Sp. Iss. SI   Pages: 1221-1226   Published: AUG-SEP 2008

--„On the other hand, even a low electric field can cause measurable surface charging of the native oxide covered silicon [A32], where the governing mechanism is tunnelling of electrons to the native oxide surface [24].”--

A32-c2. Boehringer M, Augke R.: Field passivation of the silicon wafer rear surface for reliable bulk recombination lifetime measurement JOURNAL OF THE ELECTROCHEMICAL SOCIETY   Volume: 155   Issue: 7   Pages: H474-H480   Published: 2008

A32-c1. Choukourov A, Grinevich A, Saito N, et al.: SPM analysis of fibrinogen adsorption on solid surfaces 24th European Conference on Surface Science (ECOSS-24), SEP 04-08, 2006 Paris, FRANCESURFACE SCIENCE   Volume: 601   Issue: 18   Pages: 3948-3951   Published: SEP 15 2007

A31. János Mizsei: Vibrating capacitor method in the development of semiconductor gas sensors, Thin Solid Films, 490 (2005) 17-21

A31-c2. Barsan N, Koziej D, Weimar U, Metal oxide-based gas sensor research: How to? SENSORS AND ACTUATORS B-CHEMICAL 121 (1): 18-35 JAN 30 2007

A31-c1. Beck I, Josepovits VK, Sneider J, et al.:Investigation of electron emission properties of Ba-activated tungsten cathodes JOURNAL OF PHYSICS D-APPLIED PHYSICS 38 (21): 3865-3869 NOV 7 2005

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A30. Farkas Márton Császár, János Mizsei: Vibrating capacitor mapped chemical picture classification by artificial neural network, Thin Solid Films, 490 (2005) 22-27

A29. Sami Saukko, Ulla Lassi, Vilho Lantto, Mikael Kroneld, Sergey Novikov, Pekka Kuivalainen, Tapio T. Rantala and Janos Mizsei: Experimental studies of O2-SnO2 surface interaction using powder, thick films and monocrystalline thin films, Thin Solid Films, 490 (2005) 48-53

A29-c5. Habgood M, Harrison N, An ab initio study of oxygen adsorption on tin dioxide SURFACE SCIENCE  602  (5) 1072-1079 MAR 1 2008

A29-c4. Koziej D, Thomas K, Barsan N, et al., Influence of annealing temperature on the CO sensing mechanism for tin dioxide based sensors-Operando studies CATALYSIS TODAY 126 (1-2): 211-218 AUG 15 2007

A29-c3. Gurlo A, Riedel R, In situ and operando spectroscopy for assessing mechanisms of gas sensing ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 46 (21): 3826-3848 2007

A29-c2. Barsan N, Koziej D, Weimar U, Metal oxide-based gas sensor research: How to? SENSORS AND ACTUATORS B-CHEMICAL 121 (1): 18-35 JAN 30 2007

A29-c1. Gurlo A, Interplay between O-2 and SnO2: Oxygen ionosorption and spectroscopic evidence for adsorbed oxygen CHEMPHYSCHEM 7 (10): 2041-2052 OCT 13 2006

A28. J. Mizsei*, J.A. Shrair, I. Zolomy: Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurements, Applied Surface Science 235 (2004) 376–388

A28-c5. Korotcenkov G, Cho BK.: Porous Semiconductors: Advanced Material for Gas Sensor Applications CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES Volume: 35 Issue: 1 Pages: 1-37 Published: 2010

A28-c4. Gorin DA, Yashchenok AM, Manturov AO, et al.: Effect of Layer-by-Layer Electrostatic Assemblies on the Surface Potential and Current Voltage Characteristic of Metal-Insulator-Semiconductor Structures LANGMUIR Volume: 25 Issue: 21 Pages: 12529-12534 Published: NOV 3 2009

A28-c3. Kanungo J, Maji S, Saha H, et al.: Stable aluminium ohmic contact to surface modified porous silicon SOLID-STATE ELECTRONICS Volume: 53 Issue: 6 Pages: 663-668 Published: JUN 2009

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A28-c2. O. Nichiporuk, A. Kaminski, M. Lemiti, A. Fave, S. Litvinenko and V. Skryshevsky: Passivation of the surface of rear contact solar cells by porous silicon THIN SOLID FILMS 511-512 (1): 248-251 2006--"This assumption is in a good agreement with recent results of Mizsei et al. [12], who has demonstrated the accumulation of negative charges at the PS/p-Si interface traps under illumination by vibrating capacitor method. "--

A28-c1. Pap AE, Kordas K, George TF, Leppavuori S: Thermal oxidation of porous silicon: Study on reaction kineticsJOURNAL OF PHYSICAL CHEMISTRY B 108 (34): 12744-12747 AUG 26 2004 --"As a macroscopic behaviour, it was demonstrated with the Kelvin probe method that the surface potentials measured on PS and Si differ significantly [A25, A28] "--

A27. J. Mizsei: Chemical Images by Direct Methods, Thin Solid Films, 436 (2003) No1, pp 25-33

A27-c3. Potyrailo RA, Mirsky VM, Combinatorial and high-throughput development of sensing materials: The first 10 years CHEMICAL REVIEWS  108  (2)    770-813   FEB 2008

A27-c2. T. Sahm, A. Gurlo, N. Bârsan, U. Weimar and L. Maedler: Fundamental studies on SnO2 by means of simultaneous work function change and conduction measurements THIN SOLID FILMS 490 (1): 43-47 OCT 21 2005

--"Another characteristicfeature of semiconductors which might be influenced by gases is their work function […-A27]. "--

A27-c1. [Anon]: Direct chemical imaging is hotTRAC-TRENDS IN ANALYTICAL CHEMISTRY 22 (9): IX-IX SEP 2003

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A26. J. Mizsei and S. Ress: Chemical Images by an Artificial Olfactory Epithelia, Sensors and Actuators, B83 (2002) p164-168.

A26-c4. Potyrailo RA, Mirsky VM, Combinatorial and high-throughput development of sensing materials: The first 10 years CHEMICAL REVIEWS   Volume: 108   Issue: 2   Pages: 770-813   Published: FEB 2008

A26-c3. Tan SL, Covington JA, Gardner JW.: Ultra-fast chemical sensing microsystem employing resistive nanomaterials Conference Information: Smart Structures and Materials 2004 Conference, MAR 15-18, 2004 San Diego, CASMART STRUCTURES AND MATERIALS 2004: SMART ELECTRONICS, MEMS, BIOMEMS AND NANOTECHNOLOGY Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)

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Volume: 5389 Pages: 366-376 2004

A26-c2 Reti F, Kiss G, Perczel IV: Subjective overview on oxide semiconductor gas sensors SENSORS AND MATERIALS 16 (2): 53-69 2004--"In our case the CO sensitivity of Pt(NH3)2(NO2)2 and Pd(NH3)2(NO2)2 impregnated SnO2 thick layers was measured by following the work function change, using the kelvin method, [A26] at a low temperature (90)."--

A26-c1 Castro R, Mandal MK, Ajemba P, et al.: An electronic nose for multimedia applications IEEE T CONSUM ELECTR 49 (4): 1431-1437 NOV 2003--"Mizsei and Ress [8] developed a system that converts the output signals of a gas sensor array into pixel elements displayed as a 2-D image. The sensor electronics is based on a scanning version of a vibrating capacitor (Kelvin probe). The sensor array comprised of several receptors material strips on a ceramic subtract that are asymmetrically heated. "--

A25. J. Mizsei: Fermi level pinning and passivation on the oxide covered and bare silicon surfaces and interfacesVacuum, 67 (2002) p59-67

A25-c4 Toth G, Kordas K, Vahakangas J, et al.: Laser-induced gold deposition on p(+)-Si from liquid precursors: A study on the reduction of gold ions through competing Dember and Seebeck effects JOURNAL OF PHYSICAL CHEMISTRY B 109 (15): 6925-6928 APR 21 2005

A25-c3. Pap AE, Kordas K, George TF, Leppavuori S: Thermal oxidation of porous silicon: Study on reaction kineticsJOURNAL OF PHYSICAL CHEMISTRY B 108 (34): 12744-12747 AUG 26 2004 --"As a macroscopic behaviour, it was demonstrated with the Kelvin probe method that the surface potentials measured on PS and Si differ significantly [A25, A28] "--

A25-c2. Mulato M, Hong CM, Wagner S: Size and etching effects on the reverse current of a-Si : H p-i-n diodesJ ELECTROCHEM SOC 150 (12): G735-G738 DEC 2003--"However, when Si is covered by an ultrathin tunnelable insulator (native SiO2) surface cherge tends to shift the surface nearer to the intrinsic condition. [A25] "--

A25-c1. M. McPherson: Fermi level pinning in irradiated silicon considered as arelaxation-like semiconductor

PHYSICA B 344 (1-4): 52-57 FEB 15 2004--"The work by Mizsei [A25] has attempted to address the concept of Fermi level pinning but lacks details on the phenomenon, although the author attributes it to charge carrier tunnelling which charges up the surface to induce depletion in the semiconductor. "--

A24. J. Mizsei: Ultra-thin Insulator Covered Silicon: Potential barriers and Tunnel currents, Solid State Electronics, 46 (2002) No 2, pp 235-241

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A24-c2. Kalicinski S, Wevers M, De Wolf I: Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, SEP 29-OCT 02, 2008 Maastricht, NETHERLANDSMICROELECTRONICS RELIABILITY   Volume: 48   Issue: 8-9   Special Issue: Sp. Iss. SI   Pages: 1221-1226   Published: AUG-SEP 2008

--„On the other hand, even a low electric field can cause measurable surface charging of the native oxide covered silicon [A32], where the governing mechanism is tunnelling of electrons to the native oxide surface [A24].”--

A24-c1. Witanachchi S, Abou Mourad H, Srikanth H, et al., Anomalous conductivity and positive magnetoresistance in FeSi-SiO2-Si structures in the vicinity of a resistive transition APPLIED PHYSICS LETTERS 90 (5): Art. No. 052102 JAN 29 2007

A23. J. Mizsei1, J. Voutilainen, S. Saukko and V.Lantto: Structural transformations of ultra-thin sputtered Pd activator layers on glass and SnO2 surfacesThin Solid Films, 391 (2001) No 2, pp 209-215

A23-c12. Zhao ZY, Knight M, Kumar S, et al., Humidity effects on Pd/Au-based all-optical hydrogen sensors SENSORS AND ACTUATORS B-CHEMICAL   129    (2)  726-733    FEB 22 2008

A23-c11. Ibanez FJ, Zamborini FP, Reactivity of hydrogen with solid-state films of alkylamine-and tetraoctylammonium bromide-stabilized pd, PdAg, and PdAu nanoparticles for sensing and catalysis applications JOURNAL OF THE AMERICAN CHEMICAL SOCIETY  130 (2) 622-633 JAN 16 2008

A23-c10. Sadrnezhaad SK, Vaezi MR Kinetics of TSCD zinc oxide nano-layer growth by modified diffuse-interface model CERAMICS INTERNATIONAL  33  (8) 1409-1417   2007

A23-c9. Fushimi R, Gleaves JT, Yablonsky G, et al., Combining TAP-2 experiments with atomic beam deposition of Pd on quartz particles CATALYSIS TODAY 121 (3-4): 170-186 MAR 30 2007

A23-c8. Ibanez FJ, Zamborini FP, Ozone- and thermally activated films of palladium monolayer-protected clusters for chemiresistive hydrogen sensing LANGMUIR 22 (23): 9789-9796 NOV 7 2006

A23-c7 Bernd Huber, Pekka Koskinen, Hannu Häkkinen and Michael Moseler: Oxidation of magnesia-supported Pd-clusters leads to the ultimate limit of epitaxy with a catalytic function Nature Materials 5 (2006) 44–47 --„Oxide-supported transition-metal clusters and nanoparticles have attracted significant attention owing to their important role as components of model catalysts…, sensorsA23”--

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A23-c6 Wenfeng Shen, Yan Zhao,T, Caibei Zhang: The preparation of ZnO based gas-sensing thin films by ink-jet printing methodThin Solid Films 483 (2005) 382– 387--„Metal-oxide gas-sensing films had been widely used due to their excellent properties, such as small size, low cost, high sensitivity, fast response and recovery speed. But many problems still exist to be solved for more applications, and a lot of research works are being carried out on these fields to further improve their selectivity, sensitivity and stability. These works include trying new gas-sensing materials, introducing different dopants, fabricating multilayered films, applying network recognition techniques to make electric nose, and utilizing new techniques to prepare sensing films, etc. […A23….].”--

A23-c5 L. Mazet, C. Varenne, A. Pauly, J. Brunet and J. P. Germain: H2, CO and high vacuum regeneration of ozone poisoned pseudo-Schottky Pd–InP based gas sensor SENSOR ACTUAT B-CHEM 103 (1-2): 190-199 SZEPT 29 2004 --„Mizsei et al. [A23] have shown that 1000 ppm of H2 in air is enough to reduce a continuous surface Pd–O layer to isolated Pd particles with a proper heat treatment. This reduction occurs with a change of Pd layer morphology, it is transformed to uniform Pd grain size, which increase the specific surface layer and thus sensor sensitivity. ”--

A23-c4 I. Beszeda, E. G. Gontier-Moya and D. L. Beke: Investigation of mass transfer surface self-diffusion on palladium, SURF SCI 547 (1-2): 229-238 DEC 10 2003 --„In some cases, which are for example noble metals deposited on oxide sensors to improve their selectivity and their sensitivity, the dewetting phenomena is used to agglomerate them into particles [A22,A23].”--

A23-c3. Matti A., Mäki-Jaskari and Tapio T. Rantala: Density functional study of Pd adsorbates at SnO2(1 1 0) surfaces, SURFACE SCIENCE 537 (1-3): 168-178 JULY 1 2003--"Sophisticated preparation procedures with additional dopants are being developed in order to enhance and optimize sensor performance [A23….]"--

A23-c2. T. Pisarkiewicz, A. Sutor, P. Potempa, W. Maziarz, H. Thust and T. Thelemann: Microsensor based on low temperature cofired ceramics and gas-sensitive thin film, THIN SOLID FILMS 436 (1): 84-89 JULY 22 2003 --"The deposition of catalytic films was based on works of Mizsei at al. [A10, A23]."--

A23-c1. Andrea Edit Pap, Krisztián Kordás, Raija Peura and Seppo Leppävuori: Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and XRD investigation,

APPL SURF SCI 201 (1-4): 56-60 NOV 30 2002 --"Even though, in other works, the agglomeration (melting and re-crystallization) of sputtered multi-layered nano-films of Ag and Pd was reported at low temperatures (300 oC) [….A23, A22, A18]."--

A22. J. Mizsei V. Lantto: In situ AFM, XRD and resistivity studies of the agglomeration of sputtered silver nanolayers Journal of Nanoparticle Research 3 (4) (2001) pp271-278

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A22-c7. Muller CM, Spolenak R.: Microstructure evolution during dewetting in thin Au films ACTA MATERIALIA Volume: 58 Issue: 18 Pages: 6035-6045 OCT 2010

A22-c6. Ferreira HEA, Daniel D, Bertotti M, et al.: A Novel Disposable Electrochemical Microcell: Construction and Characterization JOURNAL OF THE BRAZILIAN CHEMICAL SOCIETY Volume: 19 Issue: 8 1538-1545 2008

A22-c5. Mohan DB, Reddy VS, Sunandana CS.: AgI nanostructure development in sputter-disordered and Al-doped Ag films probed by XRD, SEM, optical absorption and photoluminescence APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 86 Issue: 1 Pages: 73-82 JAN 2007

A22-c4. Lowinsohn D, Richter EM, Angnes L, et al.: Disposable gold electrodes with reproducible area using recordable CDs and toner masks ELECTROANALYSIS 18 (1): 89-94 JAN 2006

A22-c3. Y. S. Shi: Electrical resistivity of RF sputtered Pd films, PHYS LETT A 319 (5-6): 555-559 DEC 15 2003 --”Apart from the fundamental importance of transport process, ρ in nano-range is significant for super-large scale integration [A22]. ”--

A22-c2. I. Beszeda, E. G. Gontier-Moya and D. L. Beke: Investigation of mass transfer surface self-diffusion on palladium, SURF SCI 547 (1-2): 229-238 DEC 10 2003

--”In some cases, which are for example noble metals deposited on oxide sensors to improve their selectivity and their sensitivity, the dewetting phenomena is used to agglomerate them into particles [A22, A23].”--

A22-c1. Andrea Edit Pap, Krisztián Kordás, Raija Peura and Seppo Leppävuori: Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and XRD investigation,

APPL SURF SCI 201 (1-4): 56-60 NOV 30 2002--"Even though, in other works, the agglomeration (melting and re-crystallization) of sputtered multi-layered nano-films of Ag and Pd was reported at low temperatures (300 oC) [….A23, A22, A18]."--

A21. J. Mizsei: Determination of SiO2-Si Interface Trap Level Density (Dit) by Vibrating Capacitor Method, Solid State Electronics 44 (2000) No 10 p1825-1831.

A21-c1. Hongguo Zhang, Pant Gurang, Nihdi Sigh, Quvdo Manuel, Robert Wallace, Bruce Gnade and Kevin Stokes, The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films, MICROELECTRON RELIAB 43 (12): 1981-1985 DEC 2003 --"As CMOS devices are scaled to deep submicron dimensions, the gate oxide thickness is reduced to less than 5 nm and quantum mechanical (QM) effect becomes increasingly important […A21]. "--

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--"In order to avoid nonlinear effects in the MOS system, it is recommended onC–V measurements to keep the Vac level around kT/q, which is especially true in depletion regime or near flat band [A21…]."--

A20. J.Mizsei: Surface potential mapping: comparison of the vibrating capacitor and the SPV methodSolid State Electronics 44 (2000) No 3 p509-513.

A20-c1. Potyrailo RA, Mirsky VM,  Combinatorial and high-throughput development of sensing materials: The first 10 years  CHEMICAL REVIEWS  2  770-813  FEB 2008

A19. E.B. Várhegyi, G. Kiss, J. Mizsei*, O.H. Krafcsik, G. Négyesi, B. Ostrick**, H.Meixner** and F. Réti: Examination of the Co/Pt/Cu Layer Structure with Kelvin Probe and XPS AnalysisSensors and Acuators B 68 (2000) pp. 240-243

A19-c1. D. Sueva, S. S. Georgiev, L. Iliev, N. Nedev and A. Toneva: Sensitivity of the a-Si:H/c-Si structure to alcohol vapors, SENSOR ACTUAT B-CHEM 82 (2-3): 180-185 FEB 28 2002--" The adsorption of gas molecules leads to a variation of the energy band bending of the Si surface region. This band bending variation may be interpreted also as a change of the contact potential difference (CPD) of the Si substrate relative to some reference electrode. The CPD can be measured by Kelvin's probe method. In the last few years this method is widely used for investigation of the gas sensitivity of different materials [… A19…and...]."--

A18. J.Mizsei, L. Pirttiaho, M. Karppinen and V. Lantto: Nanocatalyst Sensitisers by Agglomeration of Nanofilms,Sensors and Actuators B 65 (2000) 195-198

A18-c7. Abhay A. Sagade, Ramphal Sharma, Copper sulphide (CuxS) as an ammonia gas sensor working at room temperatureSensors and Actuators B: Chemical, In Press, Corrected Proof, Available online 16 February 2008

A18-c6. Baker PGL, Sanderson RD, Crouch AM, Sol-gel preparation and characterisation of mixed metal tin oxide thin films THIN SOLID FILMS 515 (17): 6691-6697 JUN 13 2007

A18-c5. I. Hotovy, J. Huran, P. Siciliano, S. Capone, L. Spiess and V. Rehacek, Enhancement of --" H2 sensing properties of NiO-based thin films with a Pt surface modificationSENSOR ACTUAT B-CHEM 103 (1-2): 300-311 SZEPT 29 2004It is well known that the addition of catalytically active metals, such as Pt and Pd, uniformly distributed and finely dispersed as catalytic clusters on the surface of the oxide sensing layer, can enhance the material response and selectivity, and decrease the response time and the operating temperature of the sensitive layer. They can promote chemical (spillover mechanism) or electronic sensitisations (Fermi level control) […A18]. "--

A18-c4. S. Shukla, S. Patil, S. C. Kuiry, Z. Rahman, T. Du, L. Ludwig, C. Parish and S. Seal:

12

Synthesis and characterization of sol–gel derived nanocrystalline tin oxide thin film as hydrogen sensor, SENSOR ACTUAT B-CHEM 96 (1-2): 343-353 NOV 15 2003 --"The enhanced sensitivity for the same Pt-sputtered nanocrystalline SnOx

semiconductor thin film at 200 C is possibly due to the transformation of continuous amorphous layer of Pt layer into agglomerated Pt nanoparticles [A18], which may allow the direct interaction between the H2 gas and the sensor surface. "--

--"Sputtered-Pt in a form of crystalline particles having extremely small size, rather than a continuous amorphous layer, is expected to be more effective for catalytic applications [A18]. "--

--"The enhanced sensitivity for the same Pt-sputtered nanocrystalline SnO x

semiconductor thin film at 200 °C is possibly due to the transformation of continuous amorphous layer of Pt layer into agglomerated Pt nanoparticles [A18], which may allow the direct interaction between the H2 gas and the sensor surface. "--

A18-c3. Yan XM, Ni J, Robbins M, et al.: Silver nanoparticles synthesized by vapor deposition onto an ice matrixJ NANOPART RES 4 (6): 525-533 DEC 2002 --"For example, in heterogeneous catalysis Ag is used for… …semiconductor gas sensor additive (A18: Mizsei at al, 1998)"--

A18-c2. Shirahata N, Masuda Y, Yonezawa T, et al.: Control over film thickness of SnO2 ultrathin film selectively deposited on a patterned self-assembled monolayerLANGMUIR 18 (26): 10379-10385 DEC 24 2002--"Ultrathin metal oxide films have attracted great interest in terms of fundamental questions in surface science. This is due to their various technological applications as photocatalysts, [..] gas sensing devices, [..], [….A18]."—

A18-c1. Andrea Edit Pap, Krisztián Kordás, Raija Peura and Seppo Leppävuori: Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and XRD investigation, APPL SURF SCI 201 (1-4): 56-60 NOV 30 2002--"Even though, in other works, the agglomeration (melting and re-crystallization) of sputtered multi-layered nano-films of Ag and Pd was reported at low temperatures (300 oC) [….A23, A22, A18]."--

A17. J.Mizsei: Olfactory images by scanning Kelvin method, Sensors and Actuators B 48 (1998) 300-304.

A17-c1. De Vasconcelos EA, Uchida H, Zhang WY, et al.: Dynamic photocurrent images of a gas sensing surfaceJPN J APPL PHYS 1 38 (5A): 2893-2898 MAY 1999 --"Moreover, details of the responses may depend on several parameters, such as the applied voltage, the turbulence of gas flow, and the shape of the temperature gradient [….A17]. Remarkable differences in the response maps of different metal films to the same gas have been reported. The response pattern of a metal film to different gases can differ markedly [….A17]."--

A16. J. Mizsei, P. Sipilä and V. Lantto: Structural studies of sputtered noble metal catalysts on oxide surfaces,

13

Sensors and Actuators B 47 (1998) 139-144.

A16-c17. Huijuan Xia, Yan Wang, Fanhong Kong, Shurong Wang, Baolin Zhu, Xianzhi Guo, Jun Zhang, Yanmei Wang, Shihua Wu, Au-doped WO3-based sensor for NO2 detection at low

operating temperatureSENSORS AND ACTUATORS B-CHEMICAL  , In Press, Corrected Proof, Available online 22 April 2008

A16-c17. Wang Y, Wang YM, Cao JL, et al.,  Low-temperature H2S sensors based on Ag-doped alpha-Fe2O3 nanoparticles  SENSORS AND ACTUATORS B-CHEMICAL  1  Sp. Iss. SI  183-189  APR 14

A16-c16. Han CH, Hong DU, Gwak J, et al.  A planar catalytic combustion sensor using nano-crystalline F-doped SnO2 as a supporting material for hydrogen detection  KOREAN JOURNAL OF CHEMICAL ENGINEERING  6  927-931  NOV

A16-c15.Kwoka M, Ottaviano L, Szuber J  AFM study of the surface morphology of L-CVD SnO2 thin films  THIN SOLID FILMS  23  8328-8331  SEP 14

A16-c14. Wang Y, Wang SR, Zhao YQ, et al., H2S sensing characteristics of Pt-doped alpha-Fe2O3 thick film sensors SENSORS AND ACTUATORS B-CHEMICAL 125 (1): 79-84 JUL 16 2007

A16-c13. Wang Y, Kong FH, Zhu BL, et al., Synthesis and characterization of Pd-doped alpha-Fe2O3 H2S sensor with low power consumption MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 140 (1-2): 98-102 MAY 25 2007

A16-c12. Lidia Armelao a, Davide Barreca a, Gregorio Bottaro a, Alberto Gasparotto b,Silvia Gross a, Cinzia Maragnob, Eugenio Tondello b,*: Recent trends on nanocomposites based on Cu, Ag and Au clusters: A closer lookCoordination Chemistry Reviews xxx (2006) xxx–xxx--“More specific examples include labels for biomolecules, bio and gas sensors, ultrafast optical switches, optical filters and tweezers […A16].”----“Host–guest systems containing gold and silver NPs have been the subject of several investigations such as heterogeneous catalysis [.], gas sensing […A16..],”----“Up to date, M_/MxOy-based nanocomposites have been synthesized by several chemical and physical routes, including CVD [..], SG and impregnation [..], wet chemical methods and layer-by-layer self-assembly [..], ion beamassisted techniques [..], ion implantation [..], combined thermal and electron beam deposition [..], evaporation [..], sputtering […A16…]”--

A16-c11. Mishra R, Rajanna K.: Metal-oxide thin film with Pt, Au and Ag nano-particles for gas sensing applications SENSORS AND MATERIALS 17 (8): 433-440 2005

A16-c10. Ryzhikov AS, Shatokhin AN, Putilin FN, et al.: Hydrogen sensitivity of SnO2 thin films doped with Pt by laser ablation

SENSORS AND ACTUATORS B-CHEMICAL 107 (1): 387-391 MAY 27 2005

14

--"It is most likely that during the deposition process, the initially continuous metal film transforms into multiple clusters distributed on the surface of SnO2 grains, owing to agglomeration processes. Formation of the clusters with a size exceeding the initial thickness of the metal film was proven by high resolution AFM [A16]."--

A16-c9. Armelao L, Barreca D, Gasparotto A, et al.: Preparation of gold nanoparticles on silica substrate by radio frequency sputteringJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 5 (2): 259-265 FEB 2005

A16-c8. S.J. Ippolito, S. Kandasamy, K. Kalantar-zadeh,W. Wlodarski,Hydrogen sensing characteristics of WO3 thin film conductometric sensors activated by Pt and Au catalystsSENSORS AND ACTUATORS B-CHEMICAL 108 (1-2): 154-158 JUL 22 2005

--"Metal additives such as platinum (Pt), gold (Au) or palladium (Pd) are catalysts that promote chemical reactions by reducing the activation energy between the film and the test gas. The metals are used in order to increase the selectivity and the sensitivity of the sensor as well as reducing the response and recovery times [A16]."--

A16-c7. S.J. Ippolito, S. Kandasamy, K. Kalantar-Zadeh and W. Wlodarski, Layered SAW hydrogen sensor with modified tungsten trioxide selective layer SENSORS AND ACTUATORS B-CHEMICAL 108 (1-2): 553-557 JUL 22 2005

--“The catalyst activators can significantly strengthen the reactions between the target gas and MOS surface, as well as reducing the response and recovery times [A16]. "--

A16-c6. Ingrid T. Weber, Antônio Valentini, L. F. D. Probst, Elson Longo and Edson R. Leite: Influence of noble metals on the structural and catalytic properties of Ce-doped SnO2 systems, SENSOR ACTUAT B-CHEM 97 (1): 31-38 JAN 2004

--“Mizsei et al. [A16] confirmed the idea proposed by Cabot et al. Their study of metallic coatings sputtered onto SnO2 thin films revealed that these coatings assume an “island-like structure” after the heat treatment. This structure is very marked on Pt- and Au-doped films, but insignificant on Pd-doped ones (on which PdO structures were detected).”--

A16-c5. Yoshiaki Suda, Hiroharu Kawasaki, Jun Namba, Keitarou Iwatsuji, Kazuya Doi and Kenji Wada:Properties of palladium doped tin oxide thin films for gas sensors grown by PLD method combined with sputtering process, SURFACE AND COATINGS TECHNOLOGY (174-175):1293-1296 SEPT-OCTOBER 2003 --"Moreover, it is possible to improve to the sensor sensitivity and selectivity by adding small catalytic particles (Pd, Pt, Ru, Cd…) [….A16…]."--

A16-c4. Shatokhin AN, Putilin FN, Safonova OV, Rumyantseva MN, Gas'kov AM: Sensor properties of Pd-doped SnO2 films deposited by laser ablation

INORGANIC MATERIALS 38 (4): 374-379 APR 2002--"The formation of clusters whose size exceeds the original film thickness was revealed in an earlier study by atomic force microscopy [A16]"--

A16-c3. Andrea Edit Pap, Krisztián Kordás, Raija Peura and Seppo Leppävuori: Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and

15

XRD investigation, APPL SURF SCI 201 (1-4): 56-60 NOV 30 2002--"Uncited reference [….A16]."--

A16-c2.Tammeveski K, Tenno T, Niinisto J, et al.: Thermal preparation of thin platinum coatings and their electrochemical and atomic force microscopic characterizationAPPL SURF SCI 156 (1-4): 135-142 FEB 2000--"The experimental setup was similar to that described in [A16]."--

A16-c1. Imawan C, Solzbacher F: Modified NiO Thin films Using Ti-Overlayers for H2 Sensing Proc. Of the Eurosensors XIII, (1999) 137-140 (CDROM)--”The deposition technique was also used for preparation of promotor layers […A16]."--

A15. J. Mizsei, V. Lantto: AFM studies of Ultra-Thin Metal Deposits on Sputtered Tin-Dioxide SurfacesPhysica Scripta. Vol. T69, 233-236, 1997.

A15-c2. Kwoka M, Ottaviano L, Szuber J,   AFM study of the surface morphology of L-CVD SnO2 thin films  THIN SOLID FILMS  23  8328-8331  SEP 14 2007

A15-c1.Yi YB, Wang CW, Sastry AM, Two-dimensional vs. three-dimensional clustering and percolation in fields of overlapping ellipsoids JOURNAL OF THE ELECTROCHEMICAL SOCIETY 151 (8): A1292-A1300 2004

A14. J. Mizsei: H2 induced surface and interface potentials on Pd activated SnO2 sensor films Sensors and Actuators B 28 (1995) p 129-133

A14-c9 Rettig F, Moos R,  Direct thermoelectric gas sensors: Design aspects and first gas sensors  SENSORS AND ACTUATORS B-CHEMICAL  1  413-419  APR 10 2007

A14-c8 Hung CW, Chang HC, Tsai YY, et al., Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor IEEE TRANSACTIONS ON ELECTRON DEVICES 54 (5): 1224-1231 MAY 2007

A14-c7 Hung CW, Lin HL, Tsai YY, et al., New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (29-32): L780-L782 AUG 2006

A14-c6 Ryzhikov AS, Shatokhin AN, Putilin FN, et al.: Hydrogen sensitivity of SnO2 thin films doped with Pt by laser ablation

SENSORS AND ACTUATORS B-CHEMICAL 107 (1): 387-391 MAY 27 2005 --”Development of Physical methods, such as magnetron sputtering, vacuum evaporation, and laser ablationare usually used for surface doping […, A14]."--

A14-c5 Fawcett TJ, Wolan JT, Myers RL, et al.: Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development

16

APPLIED PHYSICS LETTERS 85 (3): 416-418 JUL 19 2004

A14-c4 Shatokhin AN, Putilin FN, Safonova OV, Rumyantseva MN, Gas'kov AM: Sensor properties of Pd-doped SnO2 films deposited by laser ablation

INORGANIC MATERIALS 38 (4): 374-379 APR 2002--"Hydrogen adsorption by Pd clusters reduces the work function in the surface layer of Pd/SnO2 and the potential barrier at the Pd/SnO2 interface and increases the electron concentration in the surface layer and, hence, conductance [A14]."--

A14-c3. Simon I, Barsan N, Bauer M, et al.: Micromachined metal oxide gas sensors: opportunities to improve sensor performance SENSOR ACTUAT B-CHEM 73 (1): 1-26 FEB 25 2001 --"These experimental results are in-line with simple theoretical models used by Miszei [A14]"--

A14-c2. Korotchenkov G, Brynzari V, Dmitriev S: SnO2 films for thin film gas sensor designMAT SCI ENG B-SOLID 63 (3): 195-204 AUG 30 1999 --"This approach to selection does not take into account the peculiarities and advantage [A14] of really thin films for these applications. "-- --"The decrease in S for n-SnO2 in reducing atmosphere is a well-known effect [A14] "--

A14-c1. Farag ESM, Abo-Ghazala MS: Influence of Al layers on the work function of SnO2-based gas sensorsJ MATER SCI LETT 17 (23): 2013-2015 DEC 1 1998--"However, the work function change on this surface layer controls the carrier concentration change, and consequently the specific resisitivity change in the entire layer [A14]"--

A13. J. Mizsei: How can sensitive and selective semiconductor gas sensors be made? Sensors and Actuators B 23 (1995) p 173-176

A13-c50. Author(s): Soo MT, Cheong KY, Noor AFM: Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications SENSORS AND ACTUATORS B-CHEMICAL Volume: 151 Issue: 1 Pages: 39-55 NOV 26 2010

A13-c49. Qin YX, Hu M, Zhang J.: Microstructure characterization and NO2-sensing properties of tungsten oxide nanostructures SENSORS AND ACTUATORS B-CHEMICAL Volume: 150 Issue: 1 Pages: 339-345 SEP 21 2010

A13-c48. Patil AV, Dighavkar CG, Sonawane SK, et al.:Influence of Nb2O5 doping on ZnO thick film gas sensors JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Volume: 12 Issue: 6 Pages: 1255-1261 JUN 2010

A13-c47. Park JY, Song SJ, Wachsman ED.: Highly Sensitive/Selective Miniature Potentiometric Carbon Monoxide Gas Sensors with Titania-Based Sensing Elements JOURNAL OF THE AMERICAN CERAMIC SOCIETY Volume: 93 Issue: 4 Pages:

17

1062-1068 APR 2010

A13-c46. Park JY, Azad AM, Song SJ, et al.: Titania-Based Miniature Potentiometric Carbon Monoxide Gas Sensors with High Sensitivity JOURNAL OF THE AMERICAN CERAMIC SOCIETY Volume: 93 Issue: 3 Pages: 742-749 MAR 2010

A13-c45. Mukherjee K, Majumder SB.: Analyses of Conductance Transients to Address the Selectivity Issue of Zinc Ferrite Gas Sensors ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 13 Issue: 4 Pages: J25-J27 2010

A13-c44. Ferro R.: The effect of the material morphology on the response of the NO2 sensor based on ZnO thin film SENSORS AND ACTUATORS B-CHEMICAL Volume: 143 Issue: 1 Pages: 99-102 DEC 4 2009

A13-c43. Hatamie S, Dhas V, Kale BB, et al.: Polymer-embedded stannic oxide nanoparticles as humidity sensors MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS Volume: 29 Issue: 3 Pages: 847-850 APR 30 2009

A13-c42. Artzi-Gerlitz R, Benkstein KD, Lahr DL, et al.: Fabrication and gas sensing performance of parallel assemblies of metal oxide nanotubes supported by porous aluminum oxide membranes SENSORS AND ACTUATORS B-CHEMICAL Volume: 136 Issue: 1 Pages: 257-264 FEB 2 2009

A13-c41. Chaudhari GN, Gedam NN, Jagtap SV, et al.: H2S sensing properties of nanocrystalline Sr2Fe0.6Ni0.4MoO6 thick film prepared by sol-gel citrate method TALANTA Volume: 77 Issue: 5 Pages: 1675-1679 Published: MAR 15 2009

A13-c40. Rumyantseva MN, Makeeva EA, Gas'kov AM.: Influence of the microstructure of semiconductor sensor materials on oxygen chemisorption on their surface RUSSIAN JOURNAL OF GENERAL CHEMISTRY Volume: 78 Issue: 12 Pages: 2556-2565 DEC 2008

A13-c39. Du X, George SM.: Thickness dependence of sensor response for CO gas sensing by tin oxide films grown using atomic layer deposition SENSORS AND ACTUATORS B-CHEMICAL Volume: 135 Issue: 1 Pages: 152-160 DEC 10 2008

A13-c38. Suryawanshi DN, Patil DR, Patil LA.: Fe2O3-activated Cr2O3 thick films as temperature dependent gas sensors SENSORS AND ACTUATORS B-CHEMICAL Volume: 134 Issue: 2 Pages: 579-584 SEP 25 2008

A13-c37. Du X, Du Y, George SM.: CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy JOURNAL OF PHYSICAL CHEMISTRY A Volume: 112 Issue: 39 Pages:

18

9211-9219 9211-9219 Published: OCT 2 2008

A13-c36. Maity AB, Chaudhuri S.: Gas sensing properties of ZnO nanowires TRANSACTIONS OF THE INDIAN CERAMIC SOCIETY Volume: 67 Issue: 1 Pages: 1-15 JAN-MAR 2008

A13-c35. Soumya Kanti Biswas, Panchanan Pramanik, Studies on the gas sensing behaviour of nanosized CuNb2O6 towards ammonia, hydrogen and liquefied petroleum gasSENSORS AND ACTUATORS B-CHEMICAL Volume: 133 Issue: 2 Pages: 449-455 AUG 12 2008

A13-c34. Patil DR, Patil LA, Amalnerkar DP,  Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors 

  BULLETIN OF MATERIALS SCIENCE  6  553-559  DEC 2007

A13-c33. Lutic D, Strand M, Lloyd-Spetz A, et al., Catalytic properties of oxide nanoparticles applied in gas sensors TOPICS IN CATALYSIS 45 (1-4): 105-109 AUG 2007

A13-c32. Xie GZ, Yu JS, Chen X, et al., Gas sensing characteristics of WO3 vacuum deposited thin films SENSORS AND ACTUATORS B-CHEMICAL 123 (2): 909-914 MAY 21 2007

A13-c31. Patil SA, Patil LA, Patil DR, et al., CuO-modified tin titanate thick film resistors as H-2-gas sensors SENSORS AND ACTUATORS B-CHEMICAL 123 (1): 233-239 APR 10 2007

A13-c30. Feng LD, Huang XJ, Choi YK, Dynamic determination of domestic liquefied petroleum gas down to several ppm levels using a Sr-doped SnO2 thick film gas sensor MICROCHIMICA ACTA 156 (3-4): 245-251 DEC 2006

A13-c29. Wagh MS, Jain GH, Patil DR, et al.: Modified zinc oxide thick film resistors as NH3 gas sensor SENSORS AND ACTUATORS B-CHEMICAL 115 (1): 128-133 MAY 23 2006

A13-c28. L.A. Patil and D.R. Patil.: Heterocontact type CuO-modified SnO2 sensor for the detection of a ppm level H2S gas at room temperature Sensors and Actuators B: Chemical, In Press, Corrected Proof, Available online 30 May 2006 --"Materials like ZnO, SnO2, Fe2O3, Ga2O3, etc. [4–19] have been known to detect inflammable and toxic gases. "--

A13-c27. Du X, Du Y, George SM.: In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 23 (4): 581-588 JUL-AUG 2005 --"The depth of this space-charge region is measured by the Debye length which is defined by LD=(kT/nq2)1/2 where is the static dielectric constant, n is the charge carrier concentration, and q is the carrier charge [A13]. "--

A13-c26. Jordi Arbiol I Cobos: Metal Additive Distribution in TiO2 and SnO2 Semiconductor

19

Gas Sensor Nanostructured Materials, Facultat de Fisica, Departament d’Electronica, Barcelona, 19 de juliol de 2001 (Értekezés, http://nun97.el.ub.es/~arbiol/discdos/nanopart/tesi/tesi1.pdf)--"To increase the sensitivity and selectivity, one of the most widely used methods has been the addition of catalytically active metals, such as Pt and Pd [… … A13], "--

A13-c25. Björn Timmer, Wouter Olthuis and Albert van den Berg: Ammonia sensors and their applications—a review SENSORS AND ACTUATORS B-CHEMICAL 107 (2): 666-677 JUN 29 2005

--"Different approaches to make selective sensor systems have been applied [A13], "--

A13-c24. S.J. Ippolito, S. Kandasamy, K. Kalantar-zadeh,W. Wlodarski, Hydrogen sensing characteristics of WO3 thin film conductometric sensors activated by Pt and Au catalystsSensors and Actuators B xxx (2005) xxx–xxx--"The adsorption and desorption are temperature-activated processes, thus dynamic properties of the sensors (response and recovery times) dependent on the operating temperature [A13]. "--

A13-c23 Eranna G, Joshi BC, Runthala DP, et al., Oxide materials for development of integrated gas sensors - A comprehensive review CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES 29 (3-4): 111-188 2004

A13-c22 Satoshi Nakata and Hirokazu Okunishi, Characteristic responses of a semiconductor gas sensor depending on the frequency of a periodic temperature change APPLIED SURFACE SCIENCE 240 (1-4): 366-374 FEB 15 2005--”The conductance of a semiconductor gas sensor G(T), depends on the surface Schottky barrier height VS and temperature, since the conductance of a SnO2 semiconductor gas sensor may be considered a model of barrier-limited conductance […A13]: G(T)= G0 exp(-eVs/kT) where G0 denotes the preexponential factor and k is Boltzmann’s constant."----”To clarify the dynamic sensor responses under the application of a cyclic temperature change, a theoretical simulation of the sensor response was performed based on the following model for a semiconductor gas sensor [… A13] "----”In this simulation, the initial parameters on the reaction kinetics were basically referred to the related papers [… A13] "--

A13-c21. Satoshi Nakata and Hirokazu Okunishi, and Shigeyoshi Inooka, Gas-sensing system based on the cyclic temperature: Further characterization by the second harmonic perturbation, ANALYTICA CHIMICA ACTA 517 (1-2): 153-159 JUL 26 2004 --”The conductance of a semiconductor gas sensor G(T), depends on the surface Schottky barrier height VS and temperature, since the conductance of a SnO2 semiconductor gas sensor may be considered a model of barrier-limited conductance […A13]: G(T)= G0 exp(-eVs/kT) where G0 denotes the preexponential factor and k is Boltzmann’s constant."--

20

A13-c20. B. Adamowicz, M. Miczek, C. Brun, B. Gruzza and H. Hasegawa: Rigorous analysis of the electronic properties of InP interfaces for gas sensing, THIN SOLID FILMS 436 (1): 101-106 JULY 22 2003--”…and metal-semiconductor Schottky diodes are largely used for detection of ions in liquid phase (OH-, H+, cations), and of particular molecular species in gas phase, mainly hydrogenated compounds (H2, H2S, unsaturated hydrocarbons) as well as reducing gases (NH3 ) […, A13, …]."--

A13-c19. Hua Yang, Weichun Jin and Li Wang: Synthesis and characterization of V2O5-doped SnO2 nanocrystallites for oxygen-sensing properties, MATER LETT 57 (22-23): 3686-3689 JUL 2003 --"Semiconductor oxygen sensors offer very attractive means for different gases. They prove an excellent sensitivity and good stability in a wide working temperature range [.., A13, .]."--

A13-c18. Satyanarayana L, Madhusudan RK, Manorama SV: Synthesis of nanocrystalline Ni1-xCoxMnxFe2-xO4: a material for liquefied petroleum gas sensing

SENSOR ACTUAT B-CHEM 89(1-2): 62-67 MARCH 2003--"This property of semiconducting oxides has been exploited and used in sensors for the detection of inflammable and toxic gases such as H2, hydrocarbons, ethanol, CO and NOx

[…, A13, …]."--A13-c17. Nakata S, Hashimoto T, Okunishi H: Evaluation of the responses of a semiconductor

gas sensor to gaseous mixtures under the application of temperature modulationANALYST 127 (12): 1642-1648 2002--" The conductance of a semiconductor gas sensor, G(T), depends on the Schottky barrier height, Vs, and temperature, since the conductance of a SnO2 semiconductor gas sensor may be considered a model of barrier limited conductance […, A13]. G(T)= G0

exp(-eVs/kT)"-- --" In this simulation, the initial parameters on the reaction kinetics were basically referred to the related papers, […, A13] and…"--

A13-c16. Nakata S, Neya K, Hashimoto T: A semiconductor gas sensor based on nonlinearity: Utilization of the effect of competition on the sensor responses to gaseous mixturesELECTROANAL 14 (13): 881-887 JUL 2002 --"The effects of competition on the sensor responses to gaseous mixtures should be clarified by further investigation, i.g., consideration of the reaction between sample gases on the semiconductor surface and the semiconductor barrier height depending on the status of the adsorbed gas and the Debye length […, A13] in the present model."--

A13-c15. Gnanasekar KI, Rambabu B, Langry KC: Role of grain boundaries in exceptionally H-2 sensitive highly oriented laser ablated thin films of SnO2

J ELECTROCHEM SOC 149 (1): H19-H27 JAN 2002--"The depth of the space charge layer inside the grain is correlated to what is known as the Debye length (LD), given by the expression [A13]…."-- --" Debye length, LD, is a characteristic parameter for a given semiconductor oxide material, and it has been estimated to be approximately 4 nm for SnO2. [A13]"--

A13-c14. Kocemba I, Szafran S, Rynkowski J, et al.: The properties of strongly pressed tin oxide-based gas sensors SENSOR ACTUAT B-CHEM 79 (1): 28-32 SEP 25 2001 --"According to the theory of semiconductors doping [..] aluminium oxide should decrease carrier concentration in SnO2 and the sensitivity of the sensors prepared with

21

SnO2 and Al2O3 should increase [A13]. "-- --"On the other hand, from a practical point of view, the sensors of very high sensitivity but showing electrical resistance in the order of 10 M are in principle useless [A13]"--

A13-c13. Gas'kov AM, Rumyantseva MN: Materials for solid-state gas sensorsINORG MATER+ 36 (3): 293-301 MAR 2000 --“This refers, first of all, to the depletion-layer thickness, which is determined by the Deby length LD [A13] and ”--

A13-c12. Brown JR, Haycock PW, Smith LM, et al.: Response behaviour of tin oxide thin film gas sensors grown by MOCVDSENSOR ACTUAT B-CHEM 63 (1-2): 109-114 APR 20 2000 --"Another issue, which has still to be fully addressed, is that of obtaining selectivity towards particular gases. This is generally achieved by doping [A13 and..]."--

A13-c11. Dieguez A, Romano-Rodriguez A, Morante JR, et al.: Nanoparticle engineering for gas sensor optimisation: improved sol-gel fabricated nanocrystalline SnO2 thick film gas sensor for NO2 detection by calcination, catalytic metal introduction and grinding treatmentsSENSOR ACTUAT B-CHEM 60 (2-3): 125-137 NOV 23 1999 --"So, the basic principle of operation of a semiconductor gas sensor is the control of the surface potential barrier by adsorbed radicals [A13]."--

A13-c10. Lee AP, Reedy BJ: Temperature modulation in semiconductor gas sensingSENSOR ACTUAT B-CHEM 60 (1): 35-42 NOV 2 1999 --"More general reviews on recent developments in semiconductor (particularly SnO2) gas sensor technology can be found elsewhere […..A13….]."-- --"Other factors, both chemical and physical, which depend upon temperature and contribute to the sensor response have been identified by Mizsei [A13]."--

A13-c9. Yang JI, Lim H, Han SD: Influence of binders on the sensing and electrical characteristics of WO3-based gas sensorsSENSOR ACTUAT B-CHEM 60 (1): 71-77 NOV 2 1999 --"In actual polycrystalline films with rather small grain size like ours, the extent of the space-charge layer depends on the Debye length given by LD=… (3) and the contacting shape of GB between grains […..A13]."--

A13-c8. Martinelli G, Carotta MC, Traversa E, et al.: Thick-film gas sensors based on nano-sized semiconducting oxide powdersMRS BULL 24 (6): 30-36 JUN 1999 --"…while there are several groups working on thick film gas sensors […A13…], only a few used nano sized powders…"--

A13-c7. Sharma RK, Bhatnagar MC, Sharma GL: Mechanism in Nb doped titania oxygen gas sensorSENSOR ACTUAT B-CHEM 46 (3): 194-201 MAR 15 1998 --"The work function of a semiconductor is very sensitive to surface states, which are created due to gas adsorption. This property of semiconducting oxides has been exploited for gas sensing applications [A13]."--

--"Since adsorption and desorption of gas molecules is a temperature dependent process, therefore, response ond recovery time of the sensor also depends on the operating temperature [A13]."--

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A13-c6. Sharma RK, Bhatnagar MC, Sharma GL: Mechanism of highly sensitive and fast response Cr doped TiO2 oxygen gas sensorSENSOR ACTUAT B-CHEM 45 (3): 209-215 DEC 15 1997 --"The material properties which control the gas sensing characteristics are (1) nature of defects present in the material, (2) activation energy of the sensor material and (3) the surface kinetics and diffusivity of the gas at the selected temperature [..A13..]."--

A13-c5. Hausner M, Zacheja J, Binder J: Multi-electrode substrate for selectivity enhancement in air monitoringSENSOR ACTUAT B-CHEM 43 (1-3): 11-17 SEP 1997 --"In order to optimize the selectivity of gas sensors there are two fundamental approaches. On the one hand there are efforts in developing new materials and preparation techniques [A13,…],"--

A13-c4. Dayan NJ, Karekar RN, Aiyer RC, et al.: Effect of film thickness and curing temperature on the sensitivity of ZnO:Sb thick-film hydrogen sensorJ MATER SCI-MATER EL 8 (5): 277-279 OCT 1997 --"The order of magnitude of this depletion region in the semiconductor is around few micrometers [A13] and it extends towards the substrate."--

A13-c3. Ferroni M, Guidi V, Martinelli G, et al.: Microstructural characterization of a titanium-tungsten oxide gas sensorJ MATER RES 12 (3): 793-798 MAR 1997 --"This led to significant results in terms of both sensitivity and selectivity of the sensor [A13]"--

A13-c2. Brown JR, Cheney MT, Haycock PW, et al.: The gas-sensing properties of tin oxide thin films deposited by metallorganic chemical vapor depositionJ ELECTROCHEM SOC 144 (1): 295-299 JAN 1997--"…greater control of grain size may also lead to improved sensitivity […A13]" --

A13-c1. Szuber J: Semiconductor gas sensorsELECTRON TECHN. 30 (2): 125-133 1997--"A random potential network is the general model for homogenous semiconductor gas sensors […A13]."----"More detailed description of the electron theory of the sensing mechanism of the semiconductor gas sensors is presented in several review papers […A13…]."--

A12. J. Mizsei: Response pattern of SnO2 sensor system for smoke of different origins Sensors and Actuators B 18 (1994) p264-267

A12-c12 Ingrid T. Weber, Antônio Valentini, L. F. D. Probst, Elson Longo and Edson R. Leite: Influence of noble metals on the structural and catalytic properties of Ce-doped SnO2

systems, SENSOR ACTUAT B-CHEM 97 (1): 31-38 JAN 2004 --“In terms of a material’s sensor or catalytic aspects, the most frequently used dopants are noble metals [.., A12...].”--

A12-c11. Arsen Z. Adamyan, Zaven N. Adamian and Vladimir M. Aroutiounian: Smoke sensor with overcoming of humidity cross-sensitivity SENSOR ACTUAT B-CHEM 93 (1-3): 416-421 AUG 1 2003 --"…..detectors of smoke, which currently are widely used in fire-alarm systems. With this purpose, at the same time, investigations of gas

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sensors based on SnO2 films [A12…] aswell as on LaAlO3–CaTiO3 ceramics [….] are performed. "--

A12-c10. Nakata S, Takemura K, Ojima N, et al.: Mechanism of nonlinear responses of a semiconductor gas sensorINSTRUM SCI TECHNOL 28 (3): 241-251 2000 --"The use of characteristic sensor responses to temperature modulation for gas sensing has been investigated by many other researchers […A12…]."--

A12-c9. Nakata S, Nakamura T, Kato K, et al.: Discrimination and quantification of flammable gases with a SnO2 sniffing sensorANALYST 125 (3): 517-522 2000 --"The use of time dependent responses to gas species for gas sensing under the application of temperature modulation has been investigated by many other researchers to enhance the information available for molecular recognition […A12…]."--

A12-c8. Nakata S, Ojima N: Detection of a sample gas in the presence of an interferent gas based on a nonlinear dynamic responseSENSOR ACTUAT B-CHEM 56 (1-2): 79-84 JUN 1 1999 --"Recently, the importance of `time-dependent' responses in gas sensing has been discussed by several groups […A12…]."--

A12-c7. Korotchenkov G, Brynzari V, Dmitriev S: SnO2 thin film gas sensors for fire-alarm systemsSENSOR ACTUAT B-CHEM 54 (3): 191-196 MAR 9 1999 --"investigation made in [.. A12 and…] have shown that effective devices for early fire prevention may be developed"-- --"In this article we present the results of the research which were begun in [.. A12 and …]"-- --"Our `smoke' generator's construction has some advantage in comparison with the one used in [A12]. First, we form a smoke¯air mixture in the capacity of a given volume and then after its homogenization we pump up the air¯smoke mixture in the measurement cell. Such approach allowed us to keep constant the air¯smoke mixture concentration during the whole experiment. This was not provided in [A12]."--

A12-c6. Kaffka K, Farkas J: A gázérzékelő sor - az "elektronikus orr"MAGYAR KÉM. LAPJA 54 (7-8): 329-333 1999--"Füst és égéstermékek elektronikus orr segítségével történő vizsgálatáról Mizsei [A12] tudósított."--

A12-c5. Nakata S, Nakasuji M, Ojima N, et al.: Characteristic nonlinear responses for gas species on the surface of different semiconductor gas sensorsAPPL SURF SCI 135 (1-4): 285-292 SEP 1998 --"The importance of `time-dependent' nonlinearity in the gas sensor has partly been discussed by several groups […A12..]."--

A12-c4. Alexander PW, Di Benedetto LT, Hibbert DB: A field-portable gas analyzer with an array of six semiconductor sensors. Part 1: Quantitative determination of ethanolFIELD ANAL CHEM TECH 2 (3): 135-143 1998 --"…a sensor array of four tin-oxide semiconductor thin film devices used to characterize smoke [……A12…..]."--

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A12-c3. Nakata S, Ozaki E, Ojima N: Gas sensing based on the dynamic nonlinear responses of a semiconductor gas sensor: dependence on the range and frequency of a cyclic temperature changeANAL CHIM ACTA 361 (1-2): 93-100 MAR 31 1998 --"Recently, the importance of "time-dependent" nonlinearity in the gas sensors has been discussed by several groups […A12..]."--

A12-c2. Vlasov YG, Legin AV, Rudnitskaya AM: Cation sensitivity of AgI-Sb2S3 glasses and their use in the multisensor analysis of liquid mediaJ ANAL CHEM+ 52 (8): 758-763 AUG 1997 --"At present, the use of multisensor systems (sensor arrays) combined with both the chemometric procedure of signal processing and artificial neural network is very popular in gas analysis [……A12…..]."--

A12-c1. Nakata S, Akakabe S, Nakasuji M, et al.: Gas sensing based on a nonlinear response: Discrimination between hydrocarbons and quantification of individual components in a gas mixtureANAL CHEM 68 (13): 2067-2072 JUL 1 1996 --"The importance of "time-dependent" nonlinearity in the gas sensor has partly been discussed by several other research groups […A12…]."--

A11. J.Mizsei: Reply to "Comments on 'Surface potential transients of ultrathin SiO2-Si structures'" Solid State Electronics 36 (1993) No 1 p117

A10. J. Mizsei: Activating technology of SnO2 layers by metal particles from ultrathin metal films Sensors and Actuators B 15-16 (1993) p328-333

A10-c23 Ryzhikov AS, Shatokhin AN, Putilin FN, et al.: Hydrogen sensitivity of SnO2 thin films doped with Pt by laser ablation

SENSORS AND ACTUATORS B-CHEMICAL 107 (1): 387-391 MAY 27 2005--”It is known that properties of doped SnO2 are mainly determined by chemical states of dopants and their distribution on the surface and in the bulk of SnO2 grains. Homogeneous distribution may be achieved by sol–gel, CVD, aerosol pyrolysis methods of synthesis […,A10].”--

A10-c22. P. Mitra and H. S. Maiti: A wet-chemical process to form palladium oxide sensitiser layer on thin film zinc oxide based LPG sensor, SENSOR ACTUAT B-CHEM 97 (1): 49-58 JAN 2004 --”Sputtering technique has been used to deposit Pd on SnO2 thin film [A10…].”--

A10-c21. T. Pisarkiewicz, A. Sutor, P. Potempa, W. Maziarz, H. Thust and T. Thelemann Microsensor based on low temperature cofired ceramics and gas-sensitive thin film, THIN SOLID FILMS 436 (1): 84-89 JULY 22 2003 --"The deposition of catalytic films was based on works of Mizsei at al. [A10, A23]."--

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A10-c20. Ehrmann, S. Gassensormikrosystem auf der Basis SiO2-beschichteter SnO2-Leitfähigkeitsdetektoren, Wissenschaftliche Berichte, FZKA-6012 (Oktober 97) Dissertation, Universität Karlsruhe 1997 Forschungszentrum Karlsruhe; IFIA. 1997.--"Den bislang erfolgreichsten und vielseitigsten Weg der Selektivitätskontrolle von Leitfähigkeitsdetektoren stellt eine katalytisch wirksame Dotierung dar, die vorrangig mit Edelmetallen erfolgt […..A10]."--

A10-c19. Shatokhin AN, Putilin FN, Safonova OV, Rumyantseva MN, Gas'kov AM: Sensor properties of Pd-doped SnO2 films deposited by laser ablation

INORGANIC MATERIALS 38 (4): 374-379 APR 2002--"To dope the surface layer of films, use is made of physical deposition processes such as magnetron sputtering, vacuum evaporation, and laser ablation [A10, …]."-- --"Similar results were reported by Miszei [A10] for thin Ag, Au, Pt, and Pd films produced on SnO2 by magnetron sputtering."--

A10-c18. Cabot A, Dieguez A, Romano-Rodriguez A, et al.: Influence of the catalytic introduction procedure on the nano-SnO2 gas sensor performances - Where and how stay the catalytic atoms?SENSOR ACTUAT B-CHEM 79 (2-3): 98-106 OCT 15 2001 --"In thin film technology, many groups report to success in deposit non-continuous ultra thin layers of a catalytic element, being the Pt, Pd and Au noble metals the most frequently used [A10 and..]."--

A10-c17. Lee HJ, Song JH, Yoon YS, et al.: Enhancement of CO sensitivity of indium oxide-based semiconductor gas sensor through ultra-thin cobalt adsorptionSENSOR ACTUAT B-CHEM 79 (2-3): 200-205 OCT 15 2001 --"Previously it was reported [A10 and ..] that surface adsorption of ultra-thin Pd activator on semiconductor chemical sensor could promote the sensitivity to reducing gases and response time of SnO2-based sensor.

A10-c16. Belysheva TV, Kazachkov EA, Gutman EE: Gas sensing properties of In2O3 and Au-doped In2O3 films for detecting carbon monoxide in airJ ANAL CHEM+ 56 (7): 676-678 JUL 2001 --"Tin dioxide is used in most studies in the field of metal oxide–based gas sensors. SnO2 films doped with palladium are the most common sensors for the detec-tion of CO in air [A10–…]."--

A10-c15. Belysheva TV, Bogovtseva LP, Gutman EE: In2O3 films modified with gold as selective sensors of CO in airRUSS J APPL CHEM+ 73 (12): 2070-2073 DEC 2000 --"References 3. A10"--

A10-c14. Li JP, Wang Y, Gao XG, et al.: H2S sensing properties of the SnO2-based thin films SENSOR ACTUAT B-CHEM 65 (1-3): 111-113 JUN 30 2000 --"It was also found that the addition of noble metal Ag to SnO2 makes the material very sensitive to H2S [A6 and A10]."--

A10-c13. Holody PRJ, Soltis RE, Hangas J: Limiting particle growth in platinum/tin oxide nanocompositesSCRIPTA MATER 44 (8-9): 1821-1824 MAY 18 2001 --" It has been found that the sensitivity and selectivity of SnO2 sensors may be enhanced either by doping or by deposition of a thin discontinuous metal film on the surface of the material. Metals such as Pt, Pd and Au are used as these surface activators [A10 and..]."--

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A10-c12. Shatokhin AN, Kudryashov SI, Safonova OV, et al.: Laser ablation doping of polycrystalline tin dioxide films with palladium HIGH ENERG CHEM+ 34 (3): 182-187 MAY-JUN 2000 --"The distribution of dopants across the film, which depends on the doping procedure and determines in many respects the functional properties of sensors, is of no less importance [A12…..]."--

A10-c11. Galdikas A, Mironas A, Senuliene D, et al.: Copper on-top-sputtering induced modification of tin dioxide thin film gas sensorsSENSOR ACTUAT B-CHEM 58 (1-3): 330-337 SEP 21 1999 --" The most commonly used method for modification of tin oxide sensors is adding a catalytic active metal into the base material [A10,…]."--

A10-c10. Rao GST, Rao DT: Gas sensitivity of ZnO based thick film sensor to NH3 at room temperatureSENSOR ACTUAT B-CHEM 55 (2-3): 166-169 MAY 11 1999 --" Metal oxides such as tin dioxide and zinc oxide fabricated either in the form of thin films or as thick porous bodies, show an electrical conductivity at a temperature of ~300°C which is very sensitive to the presence of trace amounts (ppm levels) of reactive gases (hydrocarbons, hydrogen, carbon monoxide, methane, ammonia, oxides of sulphur and nitrogen, chlorine, hydrogensulfide) in air. […A10..and…]."--

A10-c9. Cao XP, Cao LL, Yao WQ, et al.: Influences of dopants on the electronic structure of SnO2 thin filmsTHIN SOLID FILMS 317 (1-2): 443-445 APR 1 1998 --"An improvement of its performance is generally obtained by doping with some additives […A10.]."--

A10-c8. Cirilli F, Kaciulis S, Mattogno G, et al.: Influence of Cu overlayer on the properties of SnO2-based gas sensorsTHIN SOLID FILMS 315 (1-2): 310-315 MAR 2 1998 --" Doping is the most popular method for the improvement of sensitivity and selectivity of SnO2-based gas sensors […A10….]."-- --" The effect of doping on the gas sensitivity can be interpreted in the terms of the surface catalytic activity contributing to the chemical reactions on the surface of solid-state sensors […A10…]. "-- --" Hence, some films were additionally activated with Pt-catalyst which reduces significantly the optimum temperature for gas chemisorption and surface chemical reactions […A10]. "--

A10-c7. Sharma RK, Bhatnagar MC, Sharma GL: Mechanism in Nb doped titania oxygen gas sensorSENSOR ACTUAT B-CHEM 46 (3): 194-201 MAR 15 1998 --"The sensitivity and selectivity of the gas sensors can be tailored to some extent by adding catalytically active dopant [….A10, A6]"--

A10-c6. Kormos F.: SnO2 film conductivity on its production conditionsREV CHIM-BUCHAREST 49 (3): 174-176 MAR 1998--"In ultimii zece ani a crescut interesul pentru filmul semiconductor de tip n baza de SnO2 cu care s-au alaborat noi tipuri de senzori electrochimici: …. Respectiv senzori de gaze [A10]"-- --"Filmele de SnO2 s-au depus pe tipuri de suporturi (sticla, alumina si safir), prin patru procedee: ….."D.C. sputtering" [A10] …."--

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A10-c5. Galdikas A, Jasutis V, Kaciulis S, et al.: Peculiarities of surface doping with Cu in SnO2 thin film gas sensorsSENSOR ACTUAT B-CHEM 43 (1-3): 140-146 SEP 1997 --"Consequently the parameters of the sensors could be improved for an application in certain circumstances in basically known surrounding of gases […A10…]. Doping is one of the most effective methods for an improvement of sensitivity and selectivity of metal oxide gas sensors […A10]"-- --"We used impurity metal sputtering for surface modification as suggested in Ref. [A10]."-- --" It is known that the electrical resistance is controlled by chemisorption of oxygen in the metal oxide films in oxygen rich atmosphere [….. A10…..]."--

A10-c4. Choi WK, Song SK, Cho JS, et al.: H-2 gas-sensing characteristics of SnOx sensors fabricated by a reactive ion-assisted deposition with/without an activator layerSENSOR ACTUAT B-CHEM 40 (1): 21-27 MAY 1 1997 --"According to Mizsei [A10], the agglomerated Pd layer was known as the best activator for H2 sensors"--

A10-c3. Zhang JP, Colbow K: Surface silver clusters as oxidation catalysts on semiconductor gas sensorsSENSOR ACTUAT B-CHEM 40 (1): 47-52 MAY 1 1997 --"Improvement for H2S sensing by silver clusters has also been reported [A6,A10]"-- --"Activation of tin oxide sensors by agglomeration of ultrathin gold and platinum films has been observed to enhance CO and H2 sensitivity, respectively [A6,A10]"--

A10-c2. Galdikas A, Mironas A, Senuliene D, et al.: CO-gas-induced resistance switching in SnO2/ultrathin Pt sandwich structureSENSOR ACTUAT B-CHEM 32 (2): 87-92 MAY 1996 --"We found the dependence of RPt* on tsp to be qualitatively the same as that of the authors (e.g., [A10]). Therefore we do not represent this dependence in our report."--

A10-c1. Cao XP, Cao LL, Yao WQ, et al.: Structural characterization of Pd-doped SnO2 thin films using XPSSURF INTERFACE ANAL 24 (9): 662-666 SEP 16 1996 --“Previous reports have emphasised the study of the Pd doping technique and its effect on the performance of the SnO2 sensor [….], mainly focusing on the doping process and the macroscopic gas-sensitive nature of Pd-doped SnO2 [A3,A10]”--

A9. J. Mizsei, V. Lantto: Air pollution monitoring with a semiconductor gas sensor array systemSensors and Actuators B 6 (1992) p223-227

A9-c10 Tamaki J: High sensitivity semiconductor gas sensors SENSOR LETTERS 3 (2): 89-98 JUN 2005

A9-c9. Kalal HS, Beigi AAM, Farazmand M, et al.: Determination of trace elemental sulfur and hydrogen sulfide in petroleum and its distillates by preliminary extraction with voltammetric detectionANALYST 125 (5): 903-908 2000 --"Because of the … …poisoning of catalysts [..], and air pollution control […A9], it is extremely important to have analytical methods to detect and determine the most common sulfur compaunds in the refining industry."--

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A9-c8. Stefan RI, van Staden JF, Aboul-Enein HY: Electrochemical sensor arraysCRIT REV ANAL CHEM 29 (2): 133-153 1999 --"The main important application field for gas sensor arrays is for environmental analysis: air composition determination. The compounds analyzed can be of the inorganic [A9] and…"--

A9-c7. Kaffka K, Farkas J: A gázérzékelő sor - az "elektronikus orr"MAGYAR KÉM. LAPJA 54 (7-8): 329-333 1999--"Mizsei és Lantto [A9] levegő szennyezettség méréséről számoltak be."—

A9-c6. Nascimento VB, Angnes L: Electrodes fabricados por "silk-screen"QUIM NOVA 21 (5): 614-629 SEP-OCT 1998 --"Há um grande número de publicações recentes explorando a tecnologia de “screen-printing ” para o desenvolvimento de sensores eletroquímicos de gases como oxigênio […..] , gás sulfídrico […….A9…….]"--

A9-c5. Ferroni M, Guidi V, Martinelli G, et al.: Characterization of a molybdenum oxide sputtered thin film as a gas sensorTHIN SOLID FILMS 307 (1-2): 148-151 OCT 10 1997 --"This method will probably allow implementation of an electronic device with resolution comparable to or even better than human nose […] and monitoring of air quality at low cost [A9]."--

A9-c4. Inczedy J: Folyamatok, dinamikus rendszerek kémiai analitikájaMAGY. KEM. FOLYÓIRAT100 (9): 373-379 1994--"Gázérzékelő félvezető érzékelők kutatása folyik a BME Elektronikus Eszközök Tanszékén [A3-A9]."--

A9-c3. Morrison SR: Chemical sensors, In SEMICONDUCTOR SENSORS, edited by Sze SM. JOHN WILEY AND SONS 1994, p:403--"Such an array of Taguchi sensors has been used […] to distinguish types of coffee and to manitor air pollution [A9]."--

A9-c2. Gyulai J: Materials research in hungaryJOURNAL ON COMMUNICATIONS 44 (7): 36-40 1993--"Only a few research activities survived and remained internationally accepted…[..A9..]"--

A9-c1. Liu CC , Zhang ZR: Research and development of chemical sensors using microfabrication techniquesSELECTIVE ELECTRODE REV 14 pp:147-167 1992 --"The use of thick-film tin dioxide-based gas sensors for detection of carbon monoxide, hydrogen sulphide, hydrogen, methane and carbon tetrachloride has been reported […A9…]."--

A8. V.Lantto, J.Mizsei: H2S monitoring as an air pollutant with silver-doped SnO2 thin film sensors Sensors and Actuators B 5 (1991) p21-25.

A8-c20. Joshi RK, Kruis FE, Size-selected SnO1.8 : Ag mixed nanoparticle films for ethanol, CO, and CH4 detection

JOURNAL OF NANOMATERIALS   Sp. Iss. SI Article Number: 67072    2007

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A8-c19. Joshi RK, Kruis FE, Dmitrieva O, Gas sensing behavior of SnO1.8 : Ag films composed of size-selected nanoparticles JOURNAL OF NANOPARTICLE RESEARCH 8 (6): 797-808 DEC 2006

A8-c18 Joshi RK, Kruis FE, Influence of Ag particle size on ethanol sensing of SnO1.8 : Ag nanoparticle films: A method to develop parts per billion level gas sensors APPLIED PHYSICS LETTERS 89 (15): Art. No. 153116 OCT 9 2006

A8-c17. Stanimirova TJ, Atanasov PA, Dimitrov IG, et al.: Investigation on the structural and optical properties of tin oxide films grown by pulsed laser deposition JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7 (3): 1335-1340 JUN 2005

A8-c16. Weber IT, Valentini A, Probst LFD, et al.: Influence of noble metals on the structural and catalytic properties of Ce-doped SnO2 systems SENSORS AND ACTUATORS B-CHEMICAL 97 (1): 31-38 JAN 1 2004

A8-c15. V. R. Katti, A. K. Debnath, K. P. Muthe, Manmeet Kaur, A. K. Dua, S. C. Gadkari, S. K. Gupta and V. C. Sahni: Mechanism of drifts in H2S sensing properties of SnO2:CuO composite thin film sensors prepared by thermal evaporation, SENSOR ACTUAT B-CHEM 96 (1-2): 245-252 NOV 2003 --"Semiconductor tin oxide (SnO2)-based gas sensors are widely reported in the literature [….-A8]. These sensors work on the principle of change in electrical conductance on exposure to the detecting gas. Desirable characteristics of a gas sensorare... ..... selectivity and long-term stability […, A8]. "--

A8-c14. Wei-Han T, Ching-Hsiang T: H2S sensing properties of noble metal doped WO3 thin film sensor fabricated by micromachining, SENSOR ACTUAT B-CHEM 81 (2-3): 237-247 JAN 5 2002--"Metal oxide materials, such as WO3 […and], SnO2 […A8..and…], TiO2 [..], and others […and..], have been examined for such gas sensing."--

A8-c13. Galdikas A, Mironas A, Senuliene D, et al.: Copper on-top-sputtering induced modification of tin dioxide thin film gas sensorsSENSOR ACTUAT B-CHEM 58 (1-3): 330-337 SEP 21 1999 --" Tin oxide, being one of the most popular materials, was used for development of various gas sensors that are capable to detect different gases in an atmosphere […A8]."--

A8-c12. Mishra VN, Agarwal RP: Sensitivity, response and recovery time of SnO2 based thick-film sensor array for H2, CO, CH4 and LPGMICROELECTR J 29 (11): 861-874 NOV 1998 --"Lantto et al. [A8] have investigated the response and recovery time of Pd-doped SnO2 sensors at an operating temperature of 150 C after hydrogen exposure. The response time was found to be 500 s and with a recovery time of more than 4000 s."--

A8-c11. Galdikas A, Kaciulis S, Mironas A, et al.: Gas induced resistance response in ultra-thin metal films covered with non-conductive layersSENSOR ACTUAT B-CHEM 43 (1-3): 186-192 SEP 1997 --" Conductivity type solid-state gas sensors are still in the focus of numbers of investigators […A8…]."--

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--" However most problems could be solved if the developed sensors are suitable for some specified conditions of application […A8…]."--

A8-c10. Rumyantseva MN, Labeau M, Senateur JP, et al.: Influence of copper on sensor properties of tin dioxide films in H2SMAT SCI ENG B-SOLID 41 (2): 228-234 NOV 1996--"The materials commonly used to create gas sensors for H2S detection are polycrystalline SnO2 ceramics doped with Pd, Pt or Ag […A8…]."--

A8-c9. Fang GJ, Liu ZL, Zhang ZC, et al.: Preparation of ZrO2-SnO2 thin films by the sol-gel technique and their gas sensitivityPHYS STATUS SOLIDI A 156 (1): 81-85 JUL 16 1996 --"The effect of doping SnO2 with Ag, Ag+Al2O3, Pd on the response to H2S was investigated [A8 to…]."--

A8-c8. Honeybourne CL, Rasheed RK: Nitrogen dioxide and volatile sulfide sensing properties of copper, zinc and nickel chromiteJ MATER CHEM 6 (3): 277-283 MAR 1996--"The majority of metal oxide sensors for volatile sulfides and nitrogen dioxide are based on tin dioxide containing additives or dopants […A8…]."--

A8-c7. Devi GS, Manorama S, Rao VJ: High-sensitivity and selectivity of an SnO2 sensor to H2S at around 100-degrees-CSENSOR ACTUAT B-CHEM 28 (1): 31-37 JUL 1995 --"The addition of small amounts of additives is known to provide better sensitivity […..A8]."--

A8-c6. Devi GS, Manorama S, Rao VJ: Gas sensitivity of SnO2/CuO heterocontactsJ ELECTROCHEM SOC 142 (8): 2754-2757 AUG 1995--"It is known that the addition of metal catalysts such as Pd,Pt, Ag, Cu, and other transition metal oxides to semiconductors increase the detection sensitivity […A8] and"--

A8-c5. Maekawa T, Tamaki J, Miura N, et al.: improvement of copper oxide - tin oxide sensor for dilute hydrogen-sulfideJ MATER CHEM 4 (8): 1259-1262 AUG 1994--“The sensitivity and/or selectivity of SnO2 based sensors to H2S are reportedly improved by … … modifying the sensors with… …Ag , [A8]”--

A8-c4. Shahriari MR, Ding J: Active silica-gel films for hydrogen-sulfide optical sensor applicationOPT LETT 19 (14): 1085-1087 JUL 15 1994--"Conventional methods for quantitatively measuring H2S concentrations depend on (1) spectroscopic measurement, (2) ion-selective electrodes, and (3) iodometric titration […A8…]"--

A8-c3. Sberveglieri G, Groppelli P, Nelli P, Perego P: Detection of sub-ppm H2S concentrations by means of SnO2(Pt) thin films, grown bythe RGTO techniqueSENS. AND ACT. B 15-16 : 86-89 1993--"The effect of doping SnO2 with Ag (element with a low electronegativity value Xi) on the response to H2S was recently investigated [A8]."--

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A8-c2. Gyulai J: Materials research in hungaryJOURNAL ON COMMUNICATIONS 44 (7): 36-40 1993--"Only a few research activities survived and remained internationally accepted… [..A8..]"--

A8-c1. Fox DL: Air pollutionANAL. CHEM. 65 (12) :156R-170R 1993 --"Two groups [A8, …] reported on investigations of doped thin-film sensors for H2S."--

A7. J.Mizsei: Surface potential transients of ultrathin SiO2-Si structuresSolid State Electronics 34 (1991) No 9 p951-957.

A7-c3. Obraztsov AN, Kashkarov PK, Zoteev AV, et al.: Nature of charge traps in anode oxide films on GaAsJ ELECTROCHEM SOC 143 (3): 1109-1112 MAR 1996 --"There are many papers which consider the difficulties in the detailed interpretation of data obtained by kelvin method (see for example A4 and A7)."--

A7-c2. Gyulai J: Materials research in hungaryJOURNAL ON COMMUNICATIONS 44 (7): 36-40 1993--"Only a few research activities survived and remained internationally accepted…[..A7..]"--

A7-c1. Riesz F: Surface potential transients of ultrathin SiO2-Si structures - comment SOLID STATE ELECTRON 36 (1): 115 1993

32

33

A6. J. Mizsei, V. Lantto: Simultaneous response of work function and resistivity of some SnO2-based thick film samples to H2 and H2S Sensors and Actuators B 4 (1991) No 1-4 p163-168.

A6-c26. Izydorczyk W, Adamowicz B,  Computer analysis of oxygen adsorption at SnO2 thin films  OPTICA APPLICATA  4  377-385 2007

A6-c25. Hierlemann A, Gutierrez-Osuna, R  Higher-order chemical sensing  CHEMICAL REVIEWS  2  563-613  FEB 2008

A6-c24. Gurlo A, Riedel R, In situ and operando spectroscopy for assessing mechanisms of gas sensing ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 46 (21): 3826-3848 2007

A6-c23. Batzill M, Diebold U, Surface studies of gas sensing metal oxides PHYSICAL CHEMISTRY CHEMICAL PHYSICS 9 (19): 2307-2318 2007

A6-c22. G. Korotcenkov, I. Blinov, M. Ivanov and J.R. Stetter: Ozone sensors on the base of SnO2 films deposited by spray pyrolysis SENSORS AND ACTUATORS B-CHEMICAL 120 (2): 679-686 JAN 10 2007

--"If the film’s resistance is being controlled by the height of potential barrier at the inter-grain contact, changing in accordance with change of surface concentration of chemisorbed oxygen, i.e. R~exp(-.S/kT), simple evaluations, made with the help of Eq. (5) [45,46], allow an estimation of the possible change in the surface potential of SnO2 upon reaction with ozone. "--

A6-c21. Batzill M, Diebold U.:The surface and materials science of tin oxide, PROGRESS IN SURFACE SCIENCE 79 (2-4): 47-154 2005 --"Band bendinginduced by chemisorbed oxygen was also observed by Mizsei and Lantto [A6], "--

A6-c20. Viacheslav Khatko, Josep Calderer, Eduard Llobet and Xavier Correig: New technology of metal oxide thin film preparation for chemical sensor application SENSORS AND ACTUATORS B-CHEMICAL 109 (1): 128-134 AUG 24 2005 --"According to Morrison [..], there exist four general ways to increase the selectivity of gas sensors. These compriseusing catalysts and promoters […-A6], "--

A6-c19. Barsan N, Weimar U: Understanding the fundamental principles of metal oxide based gas sensors; the example of CO sensing with SnO2 sensors in the presence of humidityJ PHYS-CONDENS MAT 15 (20): R813-R839 MAY 28 2003--"Most of the experimental techniques were used in the past for studying gas sensors [….A3.A6….]."--

A6-c18. Seal S, Shukla S.: Nanocrystalline SnO gas sensors in view of surface reactions and modifications JOM-J MIN MET MAT S 54 (9): 35-+ SEP 2002--"TABLE I. Reference: [A6]."--

34

A6-c17. Chowdhuri A, Sharma P, Gupta V, et al.: H2S gas sensing mechanism of SnO2 films with ultrathin CuO dotted islandsJ APPL PHYS 92 (4): 2172-2180 AUG 15 2002 --"TABLE I. Comparison of reported data on H2S gas sensors. Sensor material: Ag-SnO2, Process: sputtering, H2S gas concentration (ppm): 1, Sensitivity: 20, Operating temperature: 150 (oC), Response speed:1000 s, Reference: [A6]."--

A6-c16. Li JP, Wang Y, Gao XG, et al.: H2S sensing properties of the SnO2-based thin films SENSOR ACTUAT B-CHEM 65 (1-3): 111-113 JUN 30 2000 --"It was also found that the addition of noble metal Ag to SnO2 makes the material very sensitive to H2S [A6 and A10]."--

A6-c15. Zhang TS, Hing P, Li Y, et al.: Selective detection of ethanol vapor and hydrogen using Cd-doped SnO2-based sensorsSENSOR ACTUAT B-CHEM 60 (2-3): 208-215 NOV 23 1999 --"It seems to be assumed that Cd as a catalyst like Pd by spill-over effect promotes the dissociation of H2 [A6]: H2(g)<->H +H"--

A6-c14. Barsan N, Schweizer-Berberich M, Gopel W: Fundamental and practical aspects in the design of nanoscaled SnO2 gas sensors: a status reportFRESEN J ANAL CHEM 365 (4): 287-304 OCT 1999 --"Examples include monitoring work function changes […A3,A6…]"--

A6-c13. Shimizu Y, Egashira M: Basic aspects and challenges of semiconductor gas sensors MRS BULL 24 (6): 18-24 JUN 1999 --"Table II summarizes the odor-sensing properties of the semiconductor gas sensors considered so far […A6…]"-- --"Table II: Odor Sensing Properties of Semiconductor gas sensors. Target gas H2S, Sensor material 0.1Ag/SnO2 Concentration (ppm) 0.1, Sensitivity (Ra/Rg) 50, Operating Temperature (C) 150, Ref. A6"--

A6-c12. Weimar U, Gopel W: Chemical imaging: II. Trends in practical multiparameter sensor systemsSENSOR ACTUAT B-CHEM 52 (1-2): 143-161 SEP 15 1998 --"Mizsei and Lantto [A6] used this technique also for tin oxide thick films."--

--"Fig. 11. The values of VR as a function of VK at 420, 500 and 620 K of an SnO2

+0.1 wt. % Pd thick-film samples for H2 exposure in laboratory air. VR is the estimated barrier height change from resistance measurements, VK is the barrier height change measured directly by Kelvin probe measurements. For details see [A6]."--

A6-c11. Berntsen AJM, Van de Weijer P, Croonen Y, et al.: Stability of polymer light-emitting diodes

35

PHILIPS J RES 51 (4): 511-525 1998 --"This surface layer may cause depletion of electrons just below the surface of the ITO, which will include band bending and a higher work function. This mechanism is known in the field of gas sensors […A6]"--

A6-c10. Srivastava R, Dwivedi R, Srivastava SK: Effect of oxygen and hydrogen plasma treatment on the room temperature sensitivity of SnO2 gas sensorsMICROELECTR J 29 (11): 833-838 NOV 1998 --"It is known that there exists Schottky barrier eVs between garins and the resistance of an n-type material is given by [A6]: R=R0 exp(eVs/KT) The resistance change can be converted to the change in barrier height eVs=KT ln R/R0 "--

A6-c9. Dayan NJ, Sainkar SR, Karekar RN, et al.: Formulation and characterization of ZnO : Sb thick-film gas sensorsTHIN SOLID FILMS 325 (1-2): 254-258 JUL 18 1998 --"Gas sensors based on SnO2 [..], ZnO [..], etc. in thick-film form, have been developed for detection and control of gases, such as CO […], H2 […], H2S [A6…], etc. "--

A6-c8. Galdikas A, Mironas A, Senulienc D, et al.: Gas sensitivity studies by optical spectroscopy below the absorption edge in tin oxide thin film sensorsTHIN SOLID FILMS 323 (1-2): 275-284 JUN 22 1998 --"For this reason, the properties of tin oxide were investigated by a number of authors [….A6….]. "-- --"The simplest methods to modify the conditions of the reactions are an appropriate choice of the working temperature and impurity metal. It is proved by a number of works […A6…], that the modifications are mainly determind by the changes in the adsorption-desorption process that controls the type and the concentration of the components in the reactions."-- --"Electrical conductance and work function are mainly investigated for revealing the details of the charge transport dependence on gas in polycristalline oxides […A6…]. It is found from the studies of the work function [A6] , that band bending at the very surface of the oxide films correlates with the chemisorption of gases. The results supports the concept that the variation of the height of the potential barrier is the origin of the conductance response to gases […A6]."-- --"According to the commonly accepted model [……A6……], the resistance response originates from the electrical transport phenomena at grain boundaries in the sensors based on polycrystalline metal oxide."--

A6-c7. Sharma RK, Bhatnagar MC, Sharma GL: Mechanism in Nb doped titania oxygen gas sensorSENSOR ACTUAT B-CHEM 46 (3): 194-201 MAR 15 1998 --"The sensitivity and selectivity of the gas sensors can be tailored to some extent by adding catalytically active dopant [….A10, A6]"--

A6-c6. Zhang JP, Colbow K: Surface silver clusters as oxidation catalysts on semiconductor gas sensors SENSOR ACTUAT B-CHEM 40 (1): 47-52 MAY 1 1997 --"Improvement for H2S sensing by silver clusters has also been reported [A6, A10]"-- --"Activation of tin oxide sensors by agglomeration of ultrathin gold and platinum films has been observed to enhance CO and H2 sensitivity, respectively [A6,A10]"--

A6-c5. Ionescu R, Moise C, Vancu A: are modulations of the Schottky surface barrier the only explanation for the gas-sensing effects in sintered SnO2?APPL. SURF. SCI 84 p: 291-297 1995

36

--"The activation energy of conductance obtained from Arrhenius plots in the high-temperature range is usually connected with the Schottky barrier height [A3,A6]."--

A6-c4. Vetrone J, Chung YW: Role of initial conductance and gas pressure on the conductance response of single-crystal SnO2 thin films to H2, O2, and COJ. APPL. PHYS. 73 (12): 8371-8376 1993--"If adsorbates extract electrons from or inject electrons to the tin oxide surface, a near-surface depletion or accumulation layer will form, hereby resulting in band bending near surface, as seen by photoemission [..A6.. ]"--

A6-c3. Janata J: Chemical sensorsANALYT CHEM 64 (12) :196R-219R 1992 --"Other materials in which the change of the work function is the transduction principle included tin dioxide [A6…]"--

A6-c2. Endres HE, Mickle LD, Kösslinger C, Drost S, Hutter F: A gas sensor system with dielectric and mass sensorsSENS. ACT. B6 p: 285-288 1992 --"Similar changes of more than one material property under the influence of gases can be obtained with many other materials, e.g., SnO2 [A6…]"--

A6-c1. Prudenziati M: Thick-film Technology, SENS. AND ACT. A25 p: 227-234 1991--"Similarly, basic knowledge about the interactions between thick-film semiconductors and gases is needed; in this context recent work on models for the operation of thick-film layers for gas detection [A6] is welcome."--

A5. Mizsei Janos: Inclusive sensor - semiconductive gas sensor with sparking decomposer Sensors and Actuators B 2 (1990) p199-203.

A5-c8. Park SH, Son YC, Shaw BR, et al.: Detection of chlorinated methanes by tin oxide gas sensorsANALYST 126 (8): 1382-1386 AUG 2001 --"A good deal of research has been conducted to detect CH2Cl2, CHCl3 and CCl4 by different techniques and with various materials [A5….]. The spark discharge technique [A5], ……. have been tried."--

A5-c7. Reddy CVG, Manorama SV, Rao VJ: Semiconducting gas sensor for chlorine based on inverse spinel nickel ferriteSENSOR ACTUAT B-CHEM 55 (1): 90-95 APR 20 1999 --"There are a few reports in the literature of attempts to develop sensors for chlorine based on semiconducting oxides. Palladium doped SnO2 [A5] is shown to detect Cl2 gas but a sparker is necessary to improve the sensing characteristics."--

A5-c6. Liu CC: Development of chemical sensors using microfabrication and micromachining techniques MATER CHEM PHYS 42 (2): 87-90 NOV 15 1995--"In some cases, it is necessary to thermally decompose the detecting gas prior to measurement [A5]."--

A5-c5. Sberveglieri G: Recent developments in semiconducting thin-film gas sensorsSENS. ACT. B 23 (2-3): 103-109 FEB 1995

37

--"Table 2 Non-exhaustive list of the studies performed on SnO2 and on its dopants as gas-sensor materials, Doping or catalyst material: Pd detectable gas: hydrocarbons, H2, Cl2CH2, Cl2, CHCl3, CCl4, References: [A5]"--

A5-c4. Wu Q, Lee KM, Liu CC: Development of chemical sensors using microfabrication and micromachining techniquesSENS. ACT. B 13-14 :1-6 1993--"Some cases may also require that the detecting gas (CCl4, CHCl3, etc.) be thermally decomposed [A5] in order to carry out the detection."--

A5-c3. Janata J: Chemical sensorsANALYT CHEM 64 (12):196R-219R 1992 --"Then, there is a group of papers that describe multiparameter studies, including temperature, doping, grain size, pressure, light, and anything and everything else. It is impossible to classify them, and they are merely listed here in chronological order as a group [………A5…….]"--

A5-c2. Liu CC , Zhang ZR: Research and development of chemical sensors using microfabrication techniquesSELECTIVE ELECTRODE REV 14 pp:147-167 1992 --"N-type semiconductive tin dioxid-based gas sensors can be used to detect low level concentrations of reducing gases, such as, hydrogen, carbon monoxide, methane, ethanol, hydrogen sulfide and other inflammable gases, as well as some anaesthetic agents like forane, halothane and ethrane [A5…]. "--

A5-c1. Demarne V, Sanjines R: Thin film semiconducting metal oxide gas sensors, in GAS SENSORS: PRINCIPLES, OPERATION… edited by Sberveglieri G.Kluwer Academic Publishers 1992 p: 89--"TABLE 1: Chemically sensitive semiconductive metal oxides thin films. Basic material: SnO2 Doping material: Pd, Detectable gas: hydrocarbons, H2, Cl2, Cl2CH2, Cl2, CHCl3, CCl4, CCl2F2, C6H5Cl References: A5"--

A4. Mizsei János, Zólomy Imre: Surface Work Function Transients of Tunnel SiO2-Si structuresLecture Notes in Physics 301 (1987) p 294-301

A4-c2. Obraztsov AN, Kashkarov PK, Zoteev AV, et al.: Nature of charge traps in anode oxide films on GaAsJ ELECTROCHEM SOC 143 (3): 1109-1112 MAR 1996--"There are many papers which consider the difficulties in the detailed interpretation of data obtained by kelvin method (see for example A4 and A7."--

A4-c1. Riesz F: Surface potential transients of ultrathin SiO2-Si structures - comment SOLID STATE ELECTRON 36 (1): 115 1993--”…..ld. A7-c1…….”--

A3. Mizsei János, Harsányi József: Resistivity and work function measurements on Pd-doped SnO2 sensor surface Sensors and Actuators, 4 (1983) pp. 397-402

38

A3-c17. Alexandru Oprea, Nicolae Bârsan a and Udo Weimar a , Work function changes in gas sensitive materials: Fundamentals and applications SENSOR ACTUAT B-CHEM 142 (5) 470-493 9 NOV 2009Special Issue In Honour of Professor Ingemar Lundström--„Pioneering results have been provided by this technique about three decades ago [A3].”--

A3-c16. Nikos Chaniotakis, Nikoletta Sofikiti, Novel semiconductor materials for the development of chemical sensors and biosensors: A reviewANALYTICA CHIMICA ACTA 615 (1) 1-9 12 MAY 2008

A3-c15. Barsan N, Weimar U: Understanding the fundamental principles of metal oxide based gas sensors; the example of CO sensing with SnO2 sensors in the presence of humidityJ PHYS-CONDENS MAT 15 (20): R813-R839 MAY 28 2003 --"Most of the experimental techniques were used in the past for studying gas sensors [….A3.A6….]."--

A3-c14. Barsan N, Schweizer-Berberich M, Gopel W: Fundamental and practical aspects in the design of nanoscaled SnO2 gas sensors: a status reportFRESEN J ANAL CHEM 365 (4): 287-304 OCT 1999 --"Examples include monitoring work function changes[…A3,A6…]

A3-c13. Weimar U, Gopel W: Chemical imaging: II. Trends in practical multiparameter sensor systemsSENSOR ACTUAT B-CHEM 52 (1-2): 143-161 SEP 15 1998 --"The method of simultaneous measurements of work function changes and resistivities for studying the gas sensing mechanism was also applied by Mizsei and Harsányi [A3] to tin oxide thin films."--

A3-c12. Crowther JM, Badyal JPS: Non-isothermal plasma metallization of polymer-supported gold(III) complexesADV MATER 10 (5): 407-411 MAR 23 1998 --"Thin metal layers form the basis of many everyday applications; these includes … and gas sensors [A3] "--

A3-c11. Cao XP, Cao LL, Yao WQ, et al.: Structural characterization of Pd-doped SnO2 thin films using XPSSURF INTERFACE ANAL 24 (9): 662-666 SEP 16 1996 --“Previous reports have emphasised the study of the Pd doping technique and its effect on the performance of the SnO2 sensor [….], mainly focusing on the doping process and the macroscopic gas-sensitive nature of Pd-doped SnO2 [A3,A10]”--

A3-c10. Ionescu R, Moise C, Vancu A: Are modulations of the Schottky surface barrier the only explanation for the gas-sensing effects in sintered SnO2?APPL. SURF. SCI 84 p: 291-297 1995--"The activation energy of conductance obtained from Arrhenius plots in the high-temperature range is usually connected with the Schottky barrier height [A3,A6]."--

39

A3-c9. Sberveglieri G: Recent developments in semiconducting thin-film gas sensorsSENS. ACT. B 23 (2-3): 103-109 FEB 1995--"Table 2 Non-exhaustive list of the studies performed on SnO2 and on its dopants as gas-sensor materials, Doping or catalyst material: Pd, Pt, Au, Ni, W, Fe, detectable gas: CH4, H2, References: [A3]"--

A3-c8. Inczedy J: Folyamatok, dinamikus rendszerek kémiai analitikájaMAGY. KEM. FOLYÓIRAT100 (9): 373-379 1994--"Gázérzékelő félvezető érzékelők kutatása folyik a BME Elektronikus Eszközök Tanszékén [A3-A9]."--

A3-c7. Demarne V, Sanjines R: Thin film semiconducting metal oxide gas sensors, in GAS SENSORS: PRINCIPLES, OPERATION… edited by Sberveglieri G.Kluwer Academic Publishers 1992 p: 89--"TABLE 1: Chemically sensitive semiconductive metal oxides thin films. Basic material: SnO2 Doping material: Pd, Pt, Au, Ni, W, Fe Detectable gas: CH4, H2

References: A3"--

A3-c6. Lantto V: semiconductor gas sensors based on SnO2 thick filmsin GAS SENSORS: PRINCIPLES, OPERATION… edited by Sberveglieri G.Kluwer Academic Publishers 1992 p: 117--"the conductance changes can be related to changes in the barrier energy according to eqn (13) by the formula [A3] eVR=kT ln (Gg/G)=…."--

A3-c5. Gardner JW: Detection of Vapours and Odours from a multisensor array Using Pattern RecognitionPart 1. Principal Component and Cluster AnalysisSENS.ACT. B4 : 109 1991--"eqn. (4) is identical to that proposed by Mizei and Harsanyi [A3]"--

A3-c4. Moseley PT, Norris JOV, Williams DE: Gas Sensors, in TECHNICS AND MECHANISMS IN GAS SENSING, IOP Publishing Ltd. 1991 p: 80--"Table 3.5 summary of postulated mechanisms controlling electrical conductance of SnO2…Favoured assignment: (2) dominant chemisorbed species regulating conduction band occupation, Reference(s): Mizsei and Harsanyi (1983)"--

A3-c3. Moseley PT, TofieldBC: Gas detectors, in SOLID STATE GAS SENSORS, IOP Publishing Ltd. 1987 p: 99--"Methods that have been employed for the study of such surface states (see Chapter 9) include.. ..Kelvin probe studies of surface potentials (Rocker and Göpel 1986, Mizsei and Harsanyi 1983)"--

A3-c2. Ericson JW, Semancik S: Surface conductivity changes in SnO2(110): effects of oxigenSURF.SCI. 187 p: L658-L668 1987--"…much of the effort to characterize this material has been concerned with the gas-induced electrical changes of polycrystalline SnO2 [A3]."--

A3-c1. H.-P. Hübner und E. Obermeier: Gassensoren auf der Basis von Metalloxid-HalbleiternTECHNISCHES MESSEN 52 p: 59-66 1985--"Die bisher bekannten Arbeiten auf dem gebiet der Dünnfilm-Gassensoren befassen sich

40

überwiegend mit dem Sputtern von SnO2 - oder sn . bzw. ZnO- oder Zn-Target, durch reaktives sputtern vorgenommen wird [… A3…]."--

A2. Mizsei János: SnO2 gas sensitive semiconductor thin film Acta Polytechnica - Prace CVUT v. Prace, Vol. 20., p. 135-138 (1982)

A1. K. Tarnay, J. Mizsei, F. Masszi, P. Baji, B. Kovács, T. Rang, G. Drozdy: Silicon Integrated Circuit Fabrication Process Modelling and SimulationPeriodica Polytechnica Electrical Engineering Vol. 24. No. l. p. l09-ll3 (l980)

B. Nemzetközi konferencia előadások

B67 Márton C Bein, János Mizsei: Simulations on Vanadium Dioxide Thin Film as Thermographic MaterialProceedings of the 18th International Workshop on THERMal INvestigation of ICs and Systems (THERMINIC'12). Budapest, Magyarország, 2012.09.25-2012.09.27. pp. 97-100.

B66 E Bándy, Á. Földváry, J.Mizsei: Comparison of Anisotropic Etching and Laser Technologies Applied in Manufacturing of Semitransparent Monocrystalline Solar CellsCollection of Papers Presented at the Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP'12). Cannes, Franciaország, 2012.04.25-2012.04.27. Cannes: pp. 32-36.(ISBN: 978-2-35500-020-1)

B65 J. Mizsei: Comparative Study of Ultra-Thin Deposits on Sputtered Tin-Dioxide SurfacesVIII International Workshop on Semiconductor Gas Sensors (SGS 2012), Kraków, Poland (meghívott ea.)

B64 J. Mizsei: Electrical characterization of surface and interface potentials on SiCVII International Workshop on Semiconductor Surface Passivation, KRAKÓW, POLAND, September 11 - 15, 2011

B63 L Juhász, J Mizsei: Thin Film Porous Alumina with Heating for Integrated Humidity Sensors.VII International Workshop on Semiconductor Gas Sensors (SGS 2010), 12-16 September 2010, Kraków, Poland (poszter) (2010)

B62 J Mizsei, L Juhász: Review of humidity sensors based on thin solid filmsVII International Workshop on Semiconductor Gas Sensors (SGS 2010), 12-16 September 2010, Kraków, Poland (meghívott ea.) (2010)

B61 B Plesz, E Bándy, Á Földváry, V Timár-Horváth, J Mizsei: Thermal Behaviour of Thin Photoactive Layer Crystalline Solar Cells.Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. Sevilla, Spain, 2010.05.05-2010.05.07.pp. 221-224. (ISBN:978-2-35500-011-9)

B60 Balázs Plesz, László Juhász, János Mizsei: Feasibility Study of a CMOS-Compatible Integrated Solar Photovoltaic Cell Array41

Bernard Courtois, Jean Michel Karam, Ryutaro Maeda, Pascal Nouet, Peter Schneider, Hsiharng Yang (ed.) Collection of Papers Presented at the Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP'10). Seville, Spain, 2010.05.05-2010.05.07.pp. 403-406. (ISBN: 978-2-35500-011-9)

B59 V Timár Horváth, J Mizsei, L Juhász: A new concept in solar cell related education at the Department of Electron Devices of the Budapest University of Technology and Economics.V Benda (ed.)Proceedings of the 5th International Workshop on Teaching in Photovoltaics (IWTPV'10). Prague, Csehország, 2010.03.25-2010.03.26.pp. 30-33. (ISBN: 978-80-01-04532-9)

B58. Juhasz L, Olah L, Mizsei J.: Patterning of Porous Alumina for Integrated Humidity Sensors Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, APR 01-03, 2009 Rome, ITALYDTIP 2009: SYMPOSIUM ON DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS Pages: 219-222 Published: 2009

B57 J Mizsei: Effect of deuterium on passivated Si surfaceVI International Seminar on Semiconductor Surface Passivation SSP'2009. Zakopane, Lengyelország,, Sept. 13-18. 2008, Zakopane, Poland. (meghívott ea.) (2009)

B56. L. Juhász, J. Mizsei: SGS 2008, VI International Seminar on Semiconductor Gas sensors,. Sept. 14-19. 2008, Zakopane, Poland. (meghívott ea.)

B55. J. Mizsei, L. Juhász: Silicon in semiconductor gas sensor technology, SGS 2008, VI International Seminar on Semiconductor Gas sensors,. Sept. 14-19. 2008, Zakopane, Poland. (meghívott ea.)

B54. J. Mizsei: Macroscopic and microscopic potentials at near-surface region of semiconductors, V International Seminar on Semiconductor Surface Passivation SSP'2007, Zakopane, POLAND September 16-19, 2007., (meghívott előadás).

B53. Mizsei, J; Reggente, M. : MEMS testing by vibrating capacitor Conference Information: 10th IEEE International Workshop on Design and Diagnostics of Electronic Circuits and Systems, Date: APR 11-13, 2007 Cracow POLAND PROCEEDINGS OF THE 2007 IEEE WORKSHOP ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS AND SYSTEMS   Pages: 429-432   

B52. Mizsei, J: Contact free potential mapping by vibrating capacitor , 10th Biennial Baltic Electronics Conference, OCT 02-04, 2006 Tallinn Univ Technol, Tallinn, ESTONIA2006 International Baltic Electronics Conference, Proceedings   Pages: 63-66   Published: 2006

B51. J. Mizsei: Gas sensor applications of porous Si layers, SGS 2006, V International Seminar on Semiconductor Gas sensors,. Sept. 10-13. 2006., Ustron, Poland. (meghívott ea.)

B50. J. Mizsei: Silicon surface passivation by static charge, IV International Seminar on Semiconductor Surface Passivation SSP'2005, USTROŃ, POLAND September 10-14, 42

2005., (meghívott előadás).http://www.ssp2005.cesis.org.pl/

B49. J. Mizsei: Vibrating capacitor: applications in the research of semiconductor gas sensors, IEEE SENSORS 2004, The 3rd IEEE Conference on Sensors, Vienna, Austria, Oct. 24-27, 2004.

B48. J. Mizsei, V. Lantto: In situ STM and AFM characterization of Pd nanoparticle activated SnO2 sensor surface, IEEE SENSORS 2004, The 3rd IEEE Conference on Sensors, Vienna, Austria, Oct. 24-27, 2004.

B47. J. Mizsei: Vibrating capacitor method in the development of semiconductor gas sensors, SGS 2004, IV International Seminar on Semiconductor Gas sensors, 19-23. Sept. 2004., Ustron, Poland. (meghívott ea.)

B46. F. M. Császár, J. Mizsei: Vibrating capacitor mapped chemical picture classification by artificial neural network, SGS 2004, IV International Seminar on Semiconductor Gas sensors, 19-23. Sept. 2004., Ustron, Poland (poster).

B.45 Ruland, E.; Fath, P.; Pavelka, T.; Pap, A.; Peter, K.; Mizsei, J.:Comparative study on emitter sheet resistivity measurements for inline quality controlPhotovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on, Vol.2, 12-16 May 2003 Pages:1085 - 1087

B.44 J. Mizsei, I. Zólomy: Porous silicon on silicon: interface potential and Fermi level pinningIII International Seminar on Semiconductor Surface Passivation SSP'2003, USTROŃ, POLAND September 14-16, 2003., (meghívott előadás).http://zeus.polsl.gliwice.pl/~zm/ssp2003/index.html#speakers

B43.J. Mizsei, J.A. Shrair: Porous silicon on silicon: determination of interface properties by surface photovoltage and vibrating capacitor measurementsIII International Seminar on Semiconductor Surface Passivation SSP'2003, USTROŃ, POLAND September, 2003., (meghívott előadás).

B42.V. Székely, M. Rencz, E. Kollár, J. Mizsei, Heat–flux sensor for thethermal measurement of IC packages, in: Proceedings of the EighthTherminic Workshop, Madrid, October 1–4, 2002, pp. 83–89.

B41. Veronika Timár-Horváth, János Mizsei : Education of Solar Cells at Budapest University of Technology & Economics, IWTPV'02 Organised by the IEE Czech Branch in co-operation with the Faculty of Electrical Engineering (Department of Electrotechnology) Czech Technical University in Prague , 26 - 27 September 2002 http://k313.feld.cvut.cz/Action/2002/IWTPV/programme.htm

B40. J. Mizsei1: Olfactory pictures by direct method, SGS 2002, III International Seminar on Semiconductor Gas sensors, 18-22. Sept. 2002., Ustron, Poland. (meghívott ea.)

B39. J. Mizsei, V. Tímár-Horvath, Á. Németh: Contactless characterization of solar cell materials and layer structures by scanning Kelvin methodNATO Advanced Study Institute, Photovoltaic and Photoactive Materials - Properties, 43

Technology and Applications, Sozopol, Bulgaria, 11th-22nd September 2001 (poster)

B38. J. Mizsei: Vibrating capacitor: its application in the research of the semiconductor gas sensorsMiniworkshop on Semiconductor Gas Sensors, Tartu, Estonia, September 16, 2001. (meghívott ea.)

B37. J. Mizsei: Fermi level pinning and passivation on the oxide covered and bare silicon surfaces and interfaces, II International Seminar on Semiconductor Surface Passivation SSP'2001, USTROŃ, POLAND September 10 - 13, 2001 (meghívott ea.)

B36. J. Mizsei and S. Ress: Chemical Images by an Artificial Olfactory Bulb, The 11th International Conference on Solid-State Sensors and Actuators, EUROSENSORS XV, 10-14 June, 2001, Münich, Digest of technical papers, CD-ROM, 2D2-02

B35. J. Mizsei1, J. Voutilainen, S. Saukko and V.Lantto: Structural transformations of ultra-thin sputtered Pd activator layers on glass and SnO2 surfaces, SGS 2000, II International Seminar on Semiconductor Gas sensors, 24-27. Sept. 2000., Ustron, Poland. (meghívott ea.)

B34. Szekely, V. Rencz, M. Torok, S. Vegh, G. Benedek, Zs. Marta, Cs. Mizsei, J.: Advances in the thermal measurement and evaluation techniques, 4th International Workshop on Thermal Investigations of ICs and Microstructures (THERMINIC) September 27-29, Cannes, France, ElectronicsCooling, January 1999, Vol 5, No 1.

B33. E.B. Várhegyi, G. Kiss, J. Mizsei*, O.H. Krafcsik, G. Négyesi, B. Ostrick**, H.Meixner** and F. Réti: Examination of the Co/Pt/Cu Layer Structure with Kelvin Probe and XPS Analysis, European Conference on Solid-State Transducers, September 12-15, 1999, The Hague, The Netherlands, poster, 25P14, Proc. Of the Eurosensors XIII, p855.

B32. J. Mizsei: Thermal effects in chemical sensing, 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998., Budapest, Hungary, informal proc. (meghívott ea.)

B31. J. Mizsei: Surface and Interface Potentials in Semiconductor Chemical Sensors, SGS 98, I International Seminar on Semiconductor Gas sensors, 22-25. Sept. 1998., Ustron, Poland, (meghívott ea.)

B30. J. Mizsei, M. Karppinen, L. Pirttiaho, V. Lantto: Nanoparticle catalysts by agglomeration of nanofilms, Fourth International Conference on Nanostructured Materials, NANO’98, Book of Abstracts, June 14-19, 1998, Stockholm, Sweden, pp276.

B29. I. Bársony, M. Ádám, S. D. Kolev, Cs. Dücsõ, J. Mizsei, É. Vázsonyi, I. Szabó and A. van den Berg: "Fast, efficient bulk micro-machined heater for integrated sensor applications" EUROSENSORS XII, Southampton, September 13-16, 1998, Proceedings of the 12th European Conference on Solid-State Transducers and the 9th UK Conference on Sensors and their Applications, Vol. 2., pp. 905-908 ( 1998)

B28. J. Mizsei, L. Pirttiaho, M. Karppinen and V. Lantto: Nanocatalyst Sensitisers by Agglomeration of Nanofilms, Technical Digest of the 7th. International Meeting on

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Chemical Sensors, July 27-30, 1998, Beijing, China, pp541-543.

B27. J. Mizsei: Olfactory images by scanning Kelvin method, Proceedings of EUROSENSORS XI, The 11th European Conference on Solid State Transducers, Warsaw, Poland, September 21-24, 1997, pp167-170.

B26. Cs. Dücsõ, M.Ádám, É. Vázsonyi, I. Szabó, I. Bársony, J.Mizsei, A. van den Berg: Integrated metal-oxide gas sensor array by porous silicon micromachining, Proceedings of EUROSENSORS XI, The11th European Conference on Solid State Transducers, Warsaw, Poland, September 21-24, 1997, pp933-936.

B25. J. Mizsei, P. Sipilä and V. Lantto: Structural studies of sputtered noble metal catalysts on oxide surfaces, Proceedings of EUROSENSORS XI, The11th European Conference on Solid State Transducers, Warsaw, Poland, September 21-24, 1997, pp203-206.

B24. J. Mizsei, P. Sipilä and V. Lantto: Structural studies of ultra-thin noble metal deposits on oxide surfaces, 4th Nordic Conference on Surface Science, May 29 to June 1, 1997, Ålesund, Norway, extended abstract pp105-106.

B23. J. Mizsei, V. Lantto: AFM studies of Ultra-Thin Metal Deposits on Sputtered Tin-Dioxide Surfaces, 17th Nordic Semiconductor Meeting, Trondheim, Norway, June 17-20, 1996.

B22. J. Mizsei: Response pattern of SnO2 sensor system for smoke of different origins EUROSENSORS VII, Budapest, 1993.

B21. J. Mizsei: How can sensitive and selective semiconductor gas sensors be made? International Workshop on New Development in Semiconducting Gas Sensors, September 13-14, 1993, Castro Marina, (Lecce) .- Italy

B20. F. Riesz, J. Mizsei, I. Zolomy: Contactless measurement of the electron tunneling probability in native oxides of silicon, 12th General Conference of the condensed matter Division, Praha, 1992.

B19. F. Riesz, J. Mizsei, I. Zólomy, Contactless measurement of the electron tunneling probability in native oxides of silicon, 21st International School of Physics of Semiconducting Compounds, 25-30 May 1992, Jaszowiec, Poland

B18. J. Mizsei: Activating Technology of SnO2 Layers by metal Particles from Ultrathin metal films, EUROSENSORS VI, San Sebastian 5-7. Oct. 1992. (Book of Abstracts, p184)

B17. J. Mizsei, V. Lantto: Air pollution monitoring with a semiconductor gas sensor array system, EUROSENSORS V, Rome 30 Sept.-2 Oct. 1991.

B16. V. Lantto, J. Mizsei: H2S monitoring as an air pollutant with silver-doped SnO2 thin film sensors, EUROSENSORS V, Rome 30 Sept.-2 Oct. 1991.

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B15. J. Mizsei, V. Lantto: Simultaneous response of work function and resistivity of some SnO2-based thick film samples to H2 and H2S, EUROSENSORS IV, Karlsruhe 1-3, October 1990.

B14. V. Lantto, J. Mizsei: H2S Monitoring as an Air Pollutant with Silver Doped SnO2 Thin Film Sensors, Third International Meeting on Chemical Sensors, September 24-26, 1990, Cleveland, Ohio, USA Proc. p39-43.

B13. J. Mizsei: Potentials and charge carrier concentrations in activated SnO2 sensor films, EUROSENSORS II, Enschede, 2-4. November, 1988. (Techn. Dig., p136)

B12. Mizsei János, Zólomy Imre: Surface Work Function Transients of Tunnel SiO2-Si structures New Dev. in Sem. Phys. Szeged, Hungary, l987 (poszter)

B11. Mizsei János: Surface, Bulk and Interface potential Changes of the thin SnO 2

semiconductive layer, Conf. "Sens. Techn. and Anwendung" Bad Nauheim l986. (Poszter)

B10. Mizsei János, Zólomy Imre: Photo-Induced transient of surface work function of tunnel SiO2-Si Structures, Int. Conf. INFOS-87, Leuven, l987. (Insulating Films on Semiconductors) A-53 Poster, ABSTRACTS

B9. Kolonits Pálné, Mizsei János: Charge distribution processes at thin oxide layers 6th International Thin Film Conference (ICTF 6), Stockholm, Sweden, l984. Poster No. l69.

B8. Mizsei János, Harsányi József: Resistivity and work function measurements on Pd-doped SnO2 sensor surface, Second Int. Conf. On solid-state sensors and actuators, Delft, May 31- June 3, 1983. (Program and Abstracts, p180-181)

B7. Tímárné Horváth Veronika, Mizsei János, Végh Gerzson: Measurements by Ion-sensitive Field-Effect Transistors , Proc. on Electronics Technology '83, Budapest, Szept. 28-30. p. 383-391

B6. Mizsei János: SnO2 gas sensitive semiconductor thin film, CVUT v. Prace, vedecka konference 1982. (Előadás és kiadvány)

B5. J. Giber, D. Marton, J. László, J. Mizsei, J. Gyulai: Depth resolution of ion bombardment technique for NiPd, NiPt, PtPd thin layer systems, Proc. 3rd International Conference on SIMS, Budapest, Hungary, 1981 (Ed. A.Benninghoven, J.Giber, J.Laszlo, M.Riedel, H.W.Werner), Springer, Heidelberg, Series in Chemical Physics 19 (1982).

B4. D. Marton, A. Hanusovszky, V. Kolonits, L. Fáth, J. Mizsei: Combined SIMS and electron microprobe analysis for thin layer investigations, 6th Solid-Vacuum Interface Conference. Hollandia, Delft, l980. május 7-9.

B3. Mizsei János: Investigation on gas sensitive semiconductor thin films, 6th National Congress on Vacuum Science and Technology, Bari (Olaszország), 1979. (ABSTRACT)

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B2. K. Tarnay, F. Masszi, J. Mizsei, P. Baji, T. Rang, G. Drozdy, B. Kovács: Silicon Planar Technology process modelling, Third International spring seminar on Electronics Technology, Balatonfüred, May 15-18, (1979)

B1. Bajor György, Mizsei János: Investigation on physical properties of Al2O3 layers produced by RF sputtering on Si substrate, Sixth Czechoslovak Conference on Electronics and Vacuum Physics, Bratislava, 1976. (Előadás és kiadvány)

C. Publikációk hazai szakmai, tudományos folyóiratokban

C22. Mizsei János: „Semmi a semmiből” (Néhány gondolat Egely György „Áram a semmiből” c. cikkéhez), Áram és technológia, No 7-8. (2004) 40.

C21. J. Mizsei: Semiconductor gas sensor Journal on Communications Vol. XLVII. May 1996 18-21

C20. Mizsei János: Félvezetős kémiai érzékelők fejlesztése a BME Elektronikus Eszközök Tanszékén Elektronikai technológia - Mikrotechnika, 30. évf. (1992) p.264-269.

C19. Kádár Zsolt, Mizsei János: Számítógéppel vezérelt mérőhely gázérzékelő ellenállások vizsgálatáhozMérés és Automatika, 40.évf. (1992) p318-320.

C18. Kádár Zsolt, Mizsei János: Füstgázok detektálása félvezető gázszenzorokkal Mérés és Automatika, 40.évf. (1992) p350-354.

C17. Mizsei János: Dielektrometriás módszer igen nagy fajlagos ellenállású félvezető szeletek minősítéséhezMérés és Automatika, 39.évf. (1991) p296-300.

C16. Lehr András, Mizsei János: Gázérzékelés félvezető alapú szenzor rendszerrelMérés és Automatika, 39.évf. (1991) p368-373.

C15. Zólomy Imre, Mizsei János: Tunneloxidos félvezető struktúrákHiradástechnika, XLII. évf., 1991. ápr. p29-36.

C14. Mizsei János: Félvezető gázérzékelő jellemzőinek módosítása elektromos kisülés segítségével Mérés és Automatika, 38.évf. (1990) p353-357.

C13. Mizsei János, Riesz Ferenc: Integrált áramkörök három dimenzióban Műszaki Gazdasági Magazin, l (l989) dec. p. l509-l523.

C12. Mizsei J., Zólomy I.: Szigetelő rétegek félvezetőkönHíradástechnika, XL. K., 1. Sz., p. 19-22 (1989)

C11. Mizsei János: Ón-dioxid vékonyréteg gázérzékelők, Mérés és Automatika, 36, (l988) p. 27l-276

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C10. Mizsei János: Szilárdtest gázérzékelők konstrukciója és technológiája Finommechanika-Mikrotechnika, 27, l988. Szept. p. 28l-284.

C9. Mizsei János: Tranzisztorok - a karakterisztikaegyenletek összehasonlító levezetéseMagyar Elektronika, (1987) 2. p. 58-60.

C8. Mizsei János: Kémiai érzékelők félvezetőkkel, Hiradástechnika, XXXVIII. (1987) l2. szám, p. 553-556

C8-c1 Dr. Szentiday Klára, Dávid Lajos, Kovács András, Bársony István: MIKROELEKTRONIKAI ÉRZÉKELŐK, Műszaki KK. Budapest, 1994--"Irodalomjegyzék, 9. Fejezethez, [C8]"--

C7. Mizsei János: Félvezető alapú kémiai érzékelők: diódák és ellenállásokFizikai Szemle, 1985. május p. l82-l87

C6. Mizsei János: Tranzisztorok - működésük összehasonlító elemzéseMagyar Elektronika, (1985) 6. p. 6l-64

C5. Mizsei János, Kolonits Pálné: Vastagréteg technológiákkal megvalósítható gázérzékelőkMérés és Automatika, 32 (1984) 4. pp. l43-l45

C4. Timárné Horváth Veronika, Harsányi József, Mizsei János: Az integrált áramkörök technológiájának gyakorlati oktatása a BME Elektronikus Eszközök TanszékénHiradástechnika, 34 (1983) ll. pp. 499-503

C3. Mizsei János, Házman István: Rezgőkondenzátoros potenciálmérő felületvizsgálatokhozMérés és Automatika 3l (l983) 4. pp. 136-139

C3-c1 Giber J. és szerzőtársai: Szilárdtestek felületfizikája, MK. BUDAPEST 1987--"A rezgőkondenzátoros eljárás… ...Fázisérzékeny detektálás (lock-in technika) alkalmazásával ma ez a legpontosabb kontakpotenciál-mérés (+- 1mV) [C3]"--

C2. Tarnay K., Masszi F., Mizsei J., Baji P., Rang T., Drozdy Gy.: Szilicium planár technológia eljárás számítógépes szimulációjaFinommechanika - Mikroelektronika 18. évf. p. 257-260 (l979)

C1. Tarnay K., Mizsei J., Masszi F., Baji P., Kovács B., Rang T., Drozdy Gy.: Félvezető technológia számítógépes szimulációja Hiradástechnika XXX. évf. 11-12. pp. 327-328 (1979)

D. Konferencia előadások

D15. J. Mizsei, V. Tímár-Horvath, Á. Németh: Contactless characterization of solar cell materials and layer structures by scanning Kelvin method7th Workshop on Energy and Environment, Szent István University, Gödöllő, Dep. of

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Physics and Process Control

D14. Mizsei János: Gázérzékeny ellenállások kutatásának eredményei,Az MTA Analitikai Bizottsága és Elektroanalitikai munkabizottsága által szervezett "Kémiai szenzorok kutatásának eredményei" munkamegbeszélés, 2001. Nov. 22-23., Pécs, meghívott előadás

D13. Mizsei János: Kémiai érzékelők Meghívott előadás a BME Vegyészmérnöki Karának Fizikai Kémia-, Általános és Analitikai Kémia-, valamint Műanyag és Gumiipari Tanszéke által a Magyar Tudományos Akadémia Kémia Kutatóközpontjával és a Bay Zoltán “Anyagtudományi és Technológiai Intézet”-ével együttműködve szervezett SZENZOROK II. téli iskoláján Berkenye, 1999. február

D12. J. Mizsei, V. Lantto and L. Pirttiaho: In-situ atomic force microscopy of agglomeration phenomena on sputtered sliver nanolayers,Proceedings of the XXXIII Annual Conference of the Finnish Physical Society, (ABSTRACTS) March 4-6, 1999, Turku, Finland, 10.15.

D11. J. Mizsei, M. Karppinen, L. Pirttiaho, V. Lantto: Nanoparticle Catalysts by Agglomeration of Nanofilms, Proceedings of the XXXII Annual Conference of the Finnish Physical Society, March 19-21, 1998, Tampere, Finland, 11.11.

D10. J. Mizsei, P. Sipilä and V. Lantto: Resistivity behaviour during formation of nano-particles from ultra-thin metal deposists by annealing, Proceedings of the XXXI Annual Conference of the Finnish Physical Society, March 13 - 15, 1997, Helsinki, Finland.

D9. J. Mizsei, V. Lantto: Agglomeration behaviour of sputtered ultrathin Ag, Au and Pd layers during annealing, Proceedings of the XXX Annual Conference of the Finnish Physical Society, March 21-23, 1996, Espoo, Finland, 3.18

D8. V. Lantto, J. Mizsei, J. Remes and J. Frantti: Surface Studies of Ultra-thin Palladium Deposits on Sputtered Tin-dioxide Substrates Proc. of the XXIX annual conference of the Finnish Phys. Soc. March. 16-18, 1995, Jyväskylä, Finland, p3.20

D7. J. Mizsei, A. Uusimäki, V. Lantto: Kelvin Probe Studies of the Work-Function Behaviour of High-Tc YBCO Superconductors between 15K and 300K, Proceedings of the XXVII Annual Conference of the Finnish Physical Society, 18.-20.3.1993, Turku, Department of Applied Physics, University of Turku, Turku-SFL-R5 (1993), 14.5.

D6. J.Mizsei, A. Uusimaki, V. Lantto: Work function changes of high Tc superconductors around the Tc Proc. of the XXV annual conference of the Finnish Phys. Soc. March. 21-23, 1991, Oulu, Finland, p132.

D5. Dr. Mizsei János: Félvezetős kémiai érzékelők Előadás és kiadvány (kézirat) az "Ipari Folyamatok Méréstechnikája"c. előadássorozatban 49

(Gázelemzés, páratartalom-mérés). CO-NEX-TRAINING BT, 1991.

D4. V. Lantto, J. Mizsei: The effect of silver doping on gas response properties of SnO2 thin and thick films Proc. of the XXIV annual conference of the Finnish Physical Soc., March 29-31, 1990, Tampere, Finnland

D3. Mizsei János: Felületi potenciál és vezetés mérése ultravékony fémréteggel fedett oxid félvezetőnEötvös Lóránd Fizikai Társulat XVIII. Vándorgyűlése, Székesfehérvár, l98l. VIII. 24-26. Poszter

D2. Dobos Károly, Mizsei János: Si-SiO2 határfelületen kialakuló feszültségek és hatásuk. MIS iskola, Mátrafüred, 1977. Előadás és kiadvány

D1. Mizsei János: Katódporlasztott Al2O3 rétegek vizsgálata Si és SiO2 felületen, különös tekintettel a memória effektusokra.Fiatal Oktatók és Kutatók Tudományos Fóruma, BME, 1977. nov., előadás és kiadvány

E. Egyéb közlemények (diplomaterv, értekezés, szakkönyv, szakkönyv fejezet, jegyzet, jegyzet részlet, tanulmány, szabadalom)

E12. Dinesh K Aswal and Shiv K Gupta, Science and Technology of Chemiresistor Gas Sensors, Nova Science Publishers, 2007, ISBN: 1-60021-514-9Chapter 8: J. Mizsei, Vibrating Capacitor Method in the Development of Semiconductor Gas Sensors; pp. 297-332

E11. Mizsei János: Potenciálok rétegszerkezetekben, határfelületeken, Akadémiai doktori értekezés, 2002

E10. Dr Pinkola János (szerk.): Elektronikai technológia laboratórium, (dr. Mizsei J., Tímárné H. V.: Integrált áramkörök mikroszkópi vizsgálata, dr. Mizsei J., dr Végh G.: Technológiai mérések MOS IC gyártás ellenőrzésére, Oroszlány L., dr. Mizsei J. : Mérések CMOS IC gyártási eljárások ellenőrzésére, pp31-67Jegyzet, Műegyetemi Kiadó, 2001

E9. Mizsei János: Napelemek Jegyzet, http://www.eet.bme.hu/publications/e_books/solar/napelem.zip

E8. Hahn Emil, Harsányi Gábor, Lepsényi Imre, Mizsei János: Érzékelők és beavatkozókJegyzet, Műegyetemi Kiadó, 1999

E7. Dr Mojzes Imre (szerk.): Mikroelektronika és elektronikai technológia,Dr. Mizsei János, Dr Kovács Balázs: Technológiai ellenőrző mérések, pp73-77, Dr. Mizsei János: A nagyteljesítményű eszközök konstrukciós jellegzetességei, pp257-258, Dr. Mizsei János, Dr. Hahn Emil: Érzékelők, pp383-387, Dr. Mizsei János: Napelemek, pp394-397Műszaki Könyvkiadó, 1995

E6. Dr. Gyulai József (szerk), Dr. Balázs Jánosné, Bányai Ferenc, Göblös János, Dr. Horváth Mátyás, Dr. Mizsei János, Dr. Mojzes Imre, Dr. Petrik Olivér, Dr. Richter Péter,

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Szabó Zsolt, Dr. Verő Balázs: Mikroelektronikai technológiák perspektív kiaknázása extrém finom megmunkálások és szubminiatűr mechanikai rendszerek megvalósítása területén OMFB tanulmány, 5-9203, Budapest, 1992. december, p46-62

E5. Mizsei János, Harsányi József: Félvezetős kémiai érzékelők (A szilárdtestfizika újabb eredményei)Akadémiai Kiadó, Budapest, l987. (l78 oldal)

E5-c2 Dr. Szentiday Klára, Dávid Lajos: MIKROELEKTRONIKAI SZENZOROK ÉS ALKALMAZÁSTECHNIKÁJUK, Marktech kft., Budapest, 2000--"Irodalomjegyzék, 10. Fejezethez, [E5]"--

E5-c1. Inczedy J: Folyamatok, dinamikus rendszerek kémiai analitikájaMAGY. KEM. FOLYÓIRAT100 (9): 373-379 1994--"A korszerű szilárdtest érzékelőkről magyar nyelven is jelentek meg monográfiák [E5,..]"--

E4. Mizsei János: Ón-dioxid félvezető gázérzékelőkKandidátusi értekezés, 1985-1987.

E3. Bajor György, Horváth Veronika, Dobos Károly, Havas Jenő, Müller Henrik, Mizsei János: Mérőkészülék, gázkoncentráció meghatározásáraSzabadalmi bejelentés Budapest, 1978. Megjelent: 1981. II. 28. No. 175525

E2. Mizsei János, Katódporlasztott Al2O3 rétegek vizsgálata Si és SiO2 felületen, különös tekintettel a memória effektusokra. Szakmérnöki diplomaterv és egyetemi doktori értekezés, 1977.

E1. Mizsei János: Katódporlasztással előállított Al2O3 rétegek vizsgálata Diplomaterv, 1976, BME, Elektronikus Eszközök Tanszék

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