The Source for High Performance

GaN-on-Silicon RF Power Devices

High Performance

Nitronex LLC2305 Presidential DriveDurham, NC 27703Ph: 919.807.9100Fx: 919.807.9200www.nitronex.com

For more information, email: info@nitronex.com

Gan Essentials™ are application notes for design engineers who want to take advantage of GaN devices while avoiding the common implementation pitfalls of a new technology. Access these at nitronex.com/ganessentials.html

June 2013 ISO 9001:2008

Introducing the newest family of 48V GaN RF power devicesAvailable in plastic and ceramic packages, these devices come with Psat from 12W to 100W. Samples are available for evaluation.

Selective Applications

Public Safety / Land Mobile Radio

0 dBmInput

HBTMMIC NPT2018 NPT2022

80WOutput

DRIVER NPTB00004Q

+27 dBmOutput

WLANXcvr

w/ DPD

DRIVER FINAL

Band (GHz) Driver Final

0.1 – 1 GHz NPT2018 NPT2022

Land Mobile / MIL Radio Plastic Package Lineup

802.11ac Access Points

0 dBmInput

HBTMMIC NPT2018 NPT2022

80WOutput

DRIVER NPTB00004Q

+27 dBmOutput

WLANXcvr

w/ DPD

DRIVER FINAL

Band (GHz) Driver Final

2.4 – 2.54.9 – 5.9

MMIC NPTB00004Q

High Power WLAN Access Point

Small Cell and Mast Mount

0 dBmInput

HBTMMIC NPT2018 NPT2022

80WOutput

DRIVER NPTB00004Q

+27 dBmOutput

WLANXcvr

w/ DPD

DRIVER FINAL

Linear Pout (W) Driver Final

1W, 28V MMIC NPTB000045W, 28V NPTB00004 NPT250155W, 48V NPT2018 NPT202110W-20W, 28V NPT25015 NPT2510010W-20W, 48V NPT2018 NPT2022

Small Cell Lineup

Psat (W) Plastic

12 NPT2018(3X6 DFN)

25 NPT2019(3X6 DFN)

50 NPT2021(TO272)

100 NPT2022(TO272)

Psat (W) Ceramic

50 NPT2020(AC360)

100 NPT2010(AC360)

Covering frequencies from DC up to 4 GHz.

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Higher performance – Easier integration – Lower cost

Plastic Packaged FETsBy taking advantage of the smaller, thinner form-factor, a new approach is enabled for electronic thermal management that focuses on providing appropriate cooling only when and where it is needed within the system.

Part NumberFreq

Range (GHz)

Supply Voltage (Volts)

Test Freq (GHz)

Output Power PSAT(W)

Gain Small Signal (dB)

Theta J-C

(C/W)Package

NPTB00004** DC - 6 28 2.5 5 17 23.0 SOIC-8NENPTB00004A DC - 6 28 2.5 5 17 15.0 SOIC-8NENPTB00004Q DC - 6 28 2.5 5 17 17.0 QFN4X4-24NPT2018 DC - 4 48 2.5 12 16 7.0 DFN3X6-14NPT25015 DC - 3 28 2.5 23 14 6.3 SOIC-8NENPT35015 3 - 4 28 3.5 18 11 6.3 SOIC-8NENPT1004 DC - 3 28 2.5 45 13 4.3 SOIC-8NENPT2019 DC - 3 48 2.5 25 16 3.6 DFN3X6-14NPT2021 DC - 2.2 48 2.1 50 17 1.9 TO272-2NPT2022 DC - 2.2 48 0.9 100 19 1.7 TO272-2

Ceramic Air Cavity Packaged FETs

Part NumberFreq

Range (GHz)

Supply Voltage (Volts)

Test Freq (GHz)

Output Power PSAT(W)

Gain Small Signal (dB)

Theta J-C

(C/W)Package

NPT1012 DC - 4 28 3.0 25 13 4.0 AC200B-2NPTB00025 DC - 4 28 3.0 25 13 5.3 AC200B-2NPT1015 DC - 2.5 28 2.5 50 14 1.9 AC360B-2NPT2020 DC - 3.5 48 2.1 50 17 2.3 AC360B-2NPT35050A 3.3 - 3.8 28 3.5 50 13 2.0 AC780B-2NPT25100 NPT25100P DC - 2.7 28 2.5 90 16 1.8 AC780B-2

AC780P-2NPT1010 NPT1010P DC - 2 28 0.9 100 20 1.4 AC360B-2

AC360P-2NPT2010 DC - 2.2 48 2.1 100 17 1.7 AC360B-2NPT1007 DC - 1.2 28 0.9 200 18 1.0 AC780B-4

Packaged MMICs

Part NumberFreq

Range (GHz)

Supply Voltage (Volts)

Test Freq (GHz)

Output Power PSAT(W)

Gain Small Signal (dB)

Theta J-C

(C/W)Package

NPA1003 .02 - 1.5 28 1.0 5 17 12.0 QFN4X4-16NPA1008 DC - 2.7 28 2.5 5 15 12.0 QFN5X5-20NPA1006 DC - 1 28 1.0 15 15 4.1 DFN5X6-8NPA1007 0.8 - 2.5 28 2.0 25 25 TBD QFN7X7-44

Die FETs

Part NumberFreq

Range (GHz)

Supply Voltage (Volts)

Freq (GHz)

Output Power PSAT(W)

Gain Small Signal (dB)

Theta J-C

(C/W)

Size(mm)

NRF1-02A DC - 6 28 2.0 5 20 15.0 0.60 x 0.50NRF1-02E DC - 6 28 2.5 5 17 13.0 0.60 x 0.58NRF2-03E DC - 6 48 2.5 12 16 5.0 1.13 x 0.56NRF1-08A DC - 4 28 3.0 25 13 3.8 1.70 x 0.60NRF1-16E DC - 4 28 2.5 50 14 1.7 4.50 x 0.60NRF2-16E DC - 4 48 2.1 50 17 1.3 4.80 x 0.65NRF1-36C DC - 4 28 2.5 100 16 0.78 5.70 x 0.80NRF2-24E DC - 2 48 2.1 100 17 0.85 4.80 x 0.65

Die MMICs

Part NumberFreq

Range (GHz)

Supply Voltage (Volts)

Freq (GHz)

Output Power PSAT(W)

Gain Small Signal (dB)

Theta J-C

(C/W)

Size(mm)

NPA1003-DIE 0.02-1.5 28 1.0 5 17 10.0 1.90 x 0.90NPA1008-DIE 0.1 - 2.7 28 1.0 5 15 10.0 3.00 x 1.23NPA1007-DIE 0.8 - 2.5 28 2.0 25 25 TBD 4.10 x 2.14

The largest family of GaN-on-Silicon RF power devicesNitronex develops and manufactures a wide range of GaN-on-Si RF power transistors and MMICs for commercial and military markets. Presently the only fully-qualifi ed supplier of GaN-on-Si power transistors and MMICs for RF and microwave applications, the silicon used by Nitronex has a high resistivity (10,000 Ω/cm) which provides excellent loss characteristics at RF and microwave frequencies.

New products. New capabilities. Proven technology.Our portfolio today includes discrete transistor products ranging from DC - 6 GHz, and 5W to more than 200W of output power that deliver the following performance benefi ts:

• Better wide bandwidth performance

• High breakdown voltage

• Signifi cantly higher input and output impedances

• Lower intrinsic input and output capacitances

• Higher power density

• More robust to output mismatch

With more than 750,000 GaN-on-Si devices shipped to military and commercial customers, these products are designed to perform in these applications:

• Aerospace

• EW / jammers

• Broadband radio

• Wireless infrastructure

• Radar

• ISM

** NPTB0004A recommended for new designs

* For the most current datasheet information, go to nitronex.com

ESOP-8

QFN

DFN

TO272

AC200 AC360 AC360P

AC780

AC780-4LD

AC780P

* For the most current datasheet information, go to nitronex.com

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