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Problems for Amplifier Section
Lecture notes: Sec. 6
F. Najmabadi, ECE65, Winter 2012
F. Najmabadi, ECE65, Winter 2012
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
This is a common collector amplifier (emitter follower) .
o Input at the base, output at the emitter.
It has a emitter-degeneration bias with a voltage divider.
F. Najmabadi, ECE65, Winter 2012
Bias circuit Thevenin form of the Voltage divider
V 95.49k 18k 22
k 22
k 90.9k 18||k 22
=×+
=
==
BB
B
V
R
Real circuit
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Bias Calculations
A 3.20/ mA 05.4
107.0)1/(109.9 4.95
4.95 :KVLBE33
µβ
β
==≈=
+++×=
++=−
CB
CE
EE
EEBEBB
IIII
IIRIVRI
V 7.0 and 0 V, 7.0: Activein is BJT Assume
≥>= CECBE VIV
V 0.7 V 5 10104 9
9 :KVLCE
0
33
=>=××+=
+=−−
DCE
CE
EECE
VVV
RIV
V 95.4k 9.9 == BBB VR
k 28.1 r
k 0.3710x 4
150r
mA/V 156 1026104.05
3o
3
3
===
==≈
=××
==
mB
T
-C
A
-
-
T
Cm
gIVIVVIg
βπ
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
Thevenin form of the Voltage divider
F. Najmabadi, ECE65, Winter 2012
Signal circuit Real circuit
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
11511
151
151k)100||k1||k8.38(10156)||||(
)||||(1)||||(
3
≈+
=
=×=
+==
−
v
LEom
LEom
LEom
i
ov
A
RRrgRRrg
RRrgvvA
k 28.1rk 8.38rmA/V 156
o
===
π
mg[ ]
[ ] k 9.9k194k3.1 ||k9.9 )||||)(1( ||
≈+=++=
i
LEoBi
RRRrrRR βπ
Ω==+
= 4.6||||
|| ββππ rr
RRrrR o
sigBoo
Amplifier Parameters This is a common collector amplifier (emitter follower)
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Ω==
13k9.9
o
i
RR
k 28.1rk 8.38rmA/V 156
o
===
π
mg
Amplifier Parameters (Cut-off frequency)
Hz 39.31047.0)10100(6.4 2
1
)( 21
Hz 2.341047.0)0109.9( 2
1
)( 21
632
22
631
11
=×××+
=
+=
=××+×
=
+=
−
−
π
π
π
π
p
cLop
p
csigip
f
CRRf
f
CRRf
Hz 6.374.32.34 21 =+=+≈ ppp fff
Exercise 1: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
This is a common emitter amplifier with RE . o Input at the base, output at the collector.
It has a emitter-degeneration bias with a voltage divider.
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Bias circuit Thevenin form of the Voltage divider
V 22.215k 9.5k 34
k 9.5
k 0.5k 9.5||k 34
=×+
=
==
BB
B
V
R
Real circuit
F. Najmabadi, ECE65, Winter 2012
Bias calculations Thevenin form of the Voltage divider
A 2.14/ mA 84.2
5107.0)1/(100.5 2.22
2.22 :KVLBE3
µβ
β
==≈=
+++×=
++=−
CB
CE
EE
EEBEBB
IIII
IIRIVRI
V 7.0 and 0 V, 7.0: Activein is BJT Assume
≥>= CECBE VIV
V 0.7 V 5.10 )51010(1084.215
15 :KVLCE
0
33
=>=+××+=
++=−−
DCE
CE
EECECC
VVV
RIVRI
V 22.2k 0.5 == BBB VR
k 83.1 r
k 8.5210 84.2
150r
mA/V 10.9 1026102.84
3o
3
3
===
=×
=≈
=××
==
mB
T
-C
A
-
-
T
Cm
gIVIVVIg
βπ
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Signal circuit Real circuit
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
k 83.1r k 8.52rmA/V 10.9
o ===
π
mg
Amplifier Parameters This is a CE amplifier with RE
[ ][ ] k 8.4k 51.0201k 83.1 ||k 0.5
)1( || =×+=
++≈
i
EBi
RRrRR βπ
64.18.52/990.0510109.101
990109.10
0.990kk 100||k 1|| /)||(1
)||(
3
3
−=+××+××
−=
==++
−≈
−
−
i
o
LC
oLCEm
LCm
i
o
vv
RRrRRRg
RRgvv
k 0.1
||1 ||
=≈
+++≈
Co
sigBE
EoCo
RR
RRRrRrRR
π
β
59.1)64.1(100800,4
800,4
−=−×+
=
×+
==
v
i
o
sigi
i
sig
ov
A
vv
RRR
vvA
Exercise 2: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
k 0.1 k 8.4 == oi RR
Amplifier Cut-off frequency (2 caps: 2 poles)
Hz 8.1510100)1010010( 2
1
)( 21
Hz 91.6107.4)100108.4( 2
1
)( 21
9332
22
631
11
=×××+
=
+=
=××+×
=
+=
−
−
π
π
π
π
p
cLop
p
csigip
f
CRRf
f
CRRf
Hz 7.228.159.6 21 =+=+≈ ppp fff
k 83.1r k 8.52rmA/V 10.9
o ===
π
mg
Exercise 3: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
This is a PNP common emitter amplifier (no RE ). o Input at the base, output at the collector (RE is
shorted out by a cap)
It has a emitter-degeneration bias with two voltage sources.
Exercise 3: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Bias circuit Real circuit
A 0.5/ mA 0.1 103.2 3 :KVLBE 3
µβ ==≈=
+×=−
CB
CE
EBE
IIII
VI
V 7.0 and 0 V, 7.0: Activein is BJT Assume
≥>= ECCEB VIV
V 0.7 V 4.1 10106.46
3103.2103.23 :KVLCE
0
33
33
=>=××−=
−×++×=−−
DEC
EC
CECE
VVV
IVI
k 26.5 r
k 15010150r
mA/V 38.5 1026
10
3-o
3-
-3
===
==≈
=×
==
mB
T
C
A
T
Cm
gIVIVVIg
βπ
Exercise 3: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Signal circuit Real circuit
3.85
3.85)k 100||k 3.2||k 150(1038.5
)||||(
3
−==×+
=
−=×−=
−=
−
i
o
i
o
sigi
iv
i
o
LComi
o
vv
vv
RRRA
vv
RRrgvv
k 26.5r k 150rmA/V 38.5
o ===
π
mg
Hz 821667 21 =+=+≈ ppp fff* Show
Amplifier Parameters This is a CE amplifier with no RE
k 27.2k 3.2||k 150 ||
===
o
oCo
RrRR
k 26.5 || === ππ rrRR Bi
F. Najmabadi, ECE65, Winter 2012
This is a MOS common source amplifier (no RS ). o Input at the gate, output at the drain (RS is
shorted out by a cap)
It has a source-degeneration bias with voltage divider.
Exercise 4: Find the bias point and the amplifier parameters of this circuit. (µnCox = 100 µA/V2, (W/L) = 6/0.1, Vt = 0.5 V, λ = 0.1 V-1. Assume capacitors are large and ignore channel width modulation in biasing. )
F. Najmabadi, ECE65, Winter 2012
Bias (capacitors are open circuit):
V 353.18.110033
100V 0 G =+
=⇒=kk
kIG
Assume Saturation
232 10x3 5.0 OVOVoxnD VVL
WCI −== µ
V 803.0=+= tOVGS VVV
Saturation ⇒> OVDS VVmA 275.010x3 23 == −
OVD VI
V 550.0=−= GSGS VVV
V 249.18.1 =−= DDD IRV
V 699.0=−= SDDS VVV
V 303.0=OVV
DStOVDSGSG IRVVIRVV ++=+=
233 103 102 5.0353.1 OVOV VV −×××++=
0853.06 2 =−+ OVOV VV
GS-KVL:
Exercise 4: Find the bias point and the amplifier parameters of this circuit. (µnCox = 100 µA/V2, (W/L) = 6/0.1, Vt = 0.5 V, λ = 0.1 V-1. Assume capacitors are large and ignore channel width modulation in biasing. )
F. Najmabadi, ECE65, Winter 2012
Exercise 4: Find the bias point and the amplifier parameters of this circuit. (µnCox = 100 µA/V2, (W/L) = 6/0.1, Vt = 0.5 V, λ = 0.1 V-1. Assume capacitors are large and ignore channel width modulation in biasing. )
k 3.3610 752.0
10r
mA/V 1.82 0.303
10 0.275 2 2
3o
3
=×
==
=××
==
-D
A
-
OV
Dm
IVV
Ig
45.3
45.3)||k 2||k 3.36(101.82
)||||(
3
−==×+
=
−=∞×−=
−=
−
i
o
i
o
sigi
iv
i
o
LDomi
o
vv
vv
RRRA
vv
RRrgvv
Amplifier Parameters This is a CS amplifier with no RS
k 90.1k 2||k 3.36 ||
===
o
Doo
RRrR
k 8.24 == Gi RRk 8.24k33||k100 ==GR
Exercise 5: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
This is a common collector amplifier (emitter follower). o Input at the base, output at the emitter.
It is biased with a current source!
Exercise 5: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Bias circuit Real circuit
V 7.00
−=−=
E
EBE
VVV
V 7.0 and 0 V, 7.0: Activein is BJT Assume
≥>= CECBE VIV
k 21.1 r
k 9.34104.3
150r
mA/V 16.5 1026104.3
3o
3
3
===
=×
=≈
=××
==
mB
T
-C
A
-
-
T
Cm
gIVIVVIg
βπ
A 5.21/mA 3.4
µβ ==≈=
CB
CE
IIII
V 0.7 V 7.44 0 =>=−= DECE VVV
EV
Exercise 5: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Signal circuit Real circuit
k 21.1rk 9.34rmA/V 16.5
o
===
π
mg
14271
427
427)||||( k9.25k100||||k9.34||||
)||||(1)||||(
≈+
==
==∞=
+=
i
ov
LEom
LEo
LEom
LEom
i
o
vvA
RRrgRRr
RRrgRRrg
vv
Amplifier Parameters This is an emitter follower (RE = ∞ )
Ω=≈+
+≈ 6.60
1||
|| ββππ rRRr
RR sigBEo
[ ]M 2.5k9.25201k2.1
)||||)(1( || =×+=
++=
i
LEoBi
RRRrrRR βπ
Exercise 5: Find the bias point and the amplifier parameters of the circuit below. (Si BJT with β = 200, VA = 150 V, ignore Early effect in bias calculations).
F. Najmabadi, ECE65, Winter 2012
Signal circuit
k 21.1rk 9.34rmA/V 16.5
o
===
π
mg
Cut-off frequency
Hz 34.31047.0)6110100( 2
1
][ 21
63
2
=××+×
=
+=
−π
π
p
coLp
f
CRRf
Exercise 6: Find the bias point and the amplifier parameters of the circuit below. (µpCox (W/L) = 400 µA/V2, Vtp = − 4 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
This is a PMOS common drain amplifier. o Input at the gate, output at the source.
It has a source-degeneration bias with two voltage sources.
Exercise 6: Find the bias point and the amplifier parameters of the circuit below. (µpCox (W/L) = 400 µA/V2, Vtp = − 4 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
Bias circuit Real circuit
Assume Saturation
092
09104005.010
||101013
2
264
44
=−+
=−+×××
++×=+×=−
OVOV
OVOV
tpOVDSGD
VVVV
VVIVI
GS-KVL:
5.0 2OVoxpD V
LWCI µ=
V 9.5=+= tOVSG VVV
Saturation ⇒> OVDS VV
mA 71.0104005.0 26 =××= −OVD VI
V 9.5 0 =→−= SSSG VVV
V 9.10)5( =−−= SSD VV
V 9.1=OVV
k 141100.7101.0
11r
mA/V 0.747 0.303
100.71 2 2
3o
3
=××
==
=××
==
−
−
D
OV
Dm
I
VIg
λ
Exercise 6: Find the bias point and the amplifier parameters of the circuit below. (µpCox (W/L) = 400 µA/V2, Vtp = − 4 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
Signal circuit Real circuit
k 2.1k 34.1||k 101 ||
88.0)||||(1
)||||(
===
∞==
=+
=
mSo
Gi
LSom
LSomv
gRR
RRRRrg
RRrgA
Amplifier Parameters This is a common collector Amp.
Cut-off frequency
Hz 39.31047.0)102.110100( 2
1
][ 21
633
2
=×××+×
=
+=
−π
π
p
coLp
f
CRRf
Exercise 7: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 800 µA/V2, Vt = 1 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
This is a NMOS common gate amplifier. o Input at the source, output at the drain.
It has a source-degeneration bias with voltage divider.
Bias circuit Assume Saturation
054
05108005.010
10106
2
264
44
=−+
=−+×××
×++=×+==−
OVOV
OVOV
DtOVDGSG
VVVV
IVVIVVGS-KVL:
5.0 2OVoxnD V
LWCI µ=
V 0.2=+= tOVGS VVV
Saturation ⇒> OVDS VV
mA 40.0108005.0 26 =××= −OVD VI
V 74415101015 44
=−−=×++×=
DS
DDSD
VIVI
V 0.1=OVV
Exercise 7: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 800 µA/V2, Vt = 1 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
GV
V 615M8.1M2.1
M2.1=×
+=GV
DS-KVL:
k 10)]||(1([ ||
k 1.1/)||(1 ||
7.7)||k 10||k 250(108.0
)||||( 3
≈+=
=
+=
=∞×=
=−
sigSmoDo
m
oLDSi
v
LSomv
RRgrRRg
rRRRR
ARRrgA
Amplifier Parameters This is a common gate Amp.
Cut-off frequency
kHz 47.1Hz 22kHz 45.1
][ 21
][ 21
21
22
11
=+=+=
+=
+=
ppp
coLp
csigip
fffCRR
fCRR
fππ
Exercise 7: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 800 µA/V2, Vt = 1 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
k 250100.401.0
11r
mA/V 0.80 1
100.4 2 2
3o
3
=××
==
=××
==
−
−
D
OV
Dm
I
VIg
λ
Exercise 8: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 400 µA/V2, Vt = 3 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
This is a NMOS common drain amplifier. o Input at the gate, output at the source.
It is biased with a current source.
Bias circuit
Assume Saturation
32 100.71 5.0 -OVoxnD V
LWCI ×== µ
V 0.4=+= tOVGS VVV
Saturation ⇒> OVDS VV
V 0.1=OVVSV
mA 71.0=DI
Exercise 8: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 400 µA/V2, Vt = 3 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
V 0.40 −=−=→−= GSSSGGS VVVVV
V 94) (5 =−−=−= SDDS VVV
F. Najmabadi, ECE65, Winter 2012
704 704|| 1 ||
99.0)||||(1
)||||(
Ω=∞==
∞==
=+
=
mSo
Gi
LSom
LSomv
gRR
RRRRrg
RRrgA
Amplifier Parameters This is a common collector Amp.
Cut-off frequency
Hz 36.31047.0)70410100( 2
1
][ 21
63
2
=××+×
=
+=
−π
π
p
coLp
f
CRRf
Exercise 8: Find the bias point and the amplifier parameters of the circuit below. (µnCox (W/L) = 400 µA/V2, Vt = 3 V, λ = 0.01 V-1. Ignore channel width modulation in biasing).
k 141100.7101.0
11r
mA/V 1.42 1
100.71 2 2
3o
3
=××
==
=××
==
−
−
D
OV
Dm
I
VIg
λ
Signal circuit Real circuit