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8/8/2019 Principles of Semiconductor Devices-L12
1/24
www.nanohub.org
NCN
Lecture12:EquilibriumConcentrations
MuhammadAshraful [email protected]
Alam ECE606S09 1
8/8/2019 Principles of Semiconductor Devices-L12
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Outline
arr erconcen ra on
2) Temperaturedependenceofcarrierconcentration
3) Multipledoping,codoping,andheavydoping
4) Conclusion
Ref. ADFChapter4,pages118128
Alam ECE606S09 2
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CarrierdensitywithUniformDoping
+
Abulkmaterialmustbechargeneutraloverall
D A
Furtherifthedopingis spatiallyhomogenous
0D A p n N N + + + =
FDintegral
vs.
FD
function
?
( ) ( )1 2 1 22 2
01 2 1 4
+ = + +F FD AF F E EV V A C ( E )D
)
A
( E
N N F E E
NN F
e eE E
01 2 1 4
+ =
+ +V B C B
D B A
F F
F BF
( E ) / k T ( E ) / k T
V A ( E ) / k T ( E
E E
E E )
D
/ k T
A N e N ee e
N N(approx.)
Alam ECE606S09 3
Once you know EF, you can calculate n, p, ND+, NA
-.
8/8/2019 Principles of Semiconductor Devices-L12
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IntrinsicConcentration
+ =D A
01 2 1 4
+ =
+ +
F V B C F B
F D B A F B
( E E ) / k T ( E E ) / k T
( E E ) / k T ( E E )V CA
k T
D
/
N
e
NN eN
e
e
( ) ( )0
+ = =c F v F E E E VE
Cn p e eN N
1 = + VG
F i
E E E l
Nn
Alam ECE606S09 4
C
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Outline
1) Intrinsiccarrierconcentration
2) Temperaturedependenceofcarrierconcentration
3 Multi ledo in ,
co
do in ,
and
heav
do in
4) Conclusion
Alam ECE606S09 5
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CarrierDensitywithDonors
0D A p n N N + + + =
Inspatiallyhomogenousfieldfreeregion
ssumeN-type doping
01 2 1 4
+ =
+ +F V B C F B
F D B A F B
( E E ) / k T ( E E ) / k T A
( E E ) / k T ( E E ) / k T
DCV
NN
e ee e
NN
n(willplotinnextslide)
Alam ECE606S09 6
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TemperaturedependentConcentration
Freezeout
ExtrinsicIntrinsic
D
n
N
1
in
Temperature
D
Alam ECE606S09 7
8/8/2019 Principles of Semiconductor Devices-L12
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PhysicalInterpretation
Freezeout
ExtrinsicIntrinsic
D
n
N
1
in
Temperature
D
Alam ECE606S09 8
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ElectronConcentrationwithDonors
= =FC FC( E )E E
C
E
CNn e e eN
1 2
+
=
+ DFD E
D
( E )N
e
N
=
c D
D
( E E )
N
n1
+
DN
n
CN N
Alam ECE606S09 9
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ElectronconcentrationwithDonors
+ =Dp n
01 2
F V B C F B
F D B
( E E ) / k T ( E E ) / k T DV C ( E E ) / k T
N N e N e
e
+ =
+
2
0 + =i Dn
n
Nn
2 = i p n n
+ N
Alam ECE606S09 10
.
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HighDonordensity/FreezeoutT2
0 + =i Dn N
n
1
+N
Freeze IntrinsicD i
DND
n
N
1
out Extrinsic
1
+N
n
Tem erature
i
D
n
N
0 + =D N N N n n 1 24
1 1
= + D
Nn
N N
Alam ECE606S09 11
2 e
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Freezeout/ExtrinsicT
( )C D E E / kT CD
N N e N
1 2
4 = D
N N
2 N
n
N 1
Freezeout Extrinsic
Intrinsic
N
i
D
n
N
21 1
2
+
D
N
TemperatureD
Alam ECE606S09 12
hole concentration by nxp=ni2
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Extrinsic/IntrinsicT
2for
1
+
=