Principles of Semiconductor Devices-L12

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  • 8/8/2019 Principles of Semiconductor Devices-L12

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    www.nanohub.org

    NCN

    Lecture12:EquilibriumConcentrations

    MuhammadAshraful [email protected]

    Alam ECE606S09 1

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    Outline

    arr erconcen ra on

    2) Temperaturedependenceofcarrierconcentration

    3) Multipledoping,codoping,andheavydoping

    4) Conclusion

    Ref. ADFChapter4,pages118128

    Alam ECE606S09 2

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    CarrierdensitywithUniformDoping

    +

    Abulkmaterialmustbechargeneutraloverall

    D A

    Furtherifthedopingis spatiallyhomogenous

    0D A p n N N + + + =

    FDintegral

    vs.

    FD

    function

    ?

    ( ) ( )1 2 1 22 2

    01 2 1 4

    + = + +F FD AF F E EV V A C ( E )D

    )

    A

    ( E

    N N F E E

    NN F

    e eE E

    01 2 1 4

    + =

    + +V B C B

    D B A

    F F

    F BF

    ( E ) / k T ( E ) / k T

    V A ( E ) / k T ( E

    E E

    E E )

    D

    / k T

    A N e N ee e

    N N(approx.)

    Alam ECE606S09 3

    Once you know EF, you can calculate n, p, ND+, NA

    -.

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    IntrinsicConcentration

    + =D A

    01 2 1 4

    + =

    + +

    F V B C F B

    F D B A F B

    ( E E ) / k T ( E E ) / k T

    ( E E ) / k T ( E E )V CA

    k T

    D

    /

    N

    e

    NN eN

    e

    e

    ( ) ( )0

    + = =c F v F E E E VE

    Cn p e eN N

    1 = + VG

    F i

    E E E l

    Nn

    Alam ECE606S09 4

    C

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    Outline

    1) Intrinsiccarrierconcentration

    2) Temperaturedependenceofcarrierconcentration

    3 Multi ledo in ,

    co

    do in ,

    and

    heav

    do in

    4) Conclusion

    Alam ECE606S09 5

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    CarrierDensitywithDonors

    0D A p n N N + + + =

    Inspatiallyhomogenousfieldfreeregion

    ssumeN-type doping

    01 2 1 4

    + =

    + +F V B C F B

    F D B A F B

    ( E E ) / k T ( E E ) / k T A

    ( E E ) / k T ( E E ) / k T

    DCV

    NN

    e ee e

    NN

    n(willplotinnextslide)

    Alam ECE606S09 6

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    TemperaturedependentConcentration

    Freezeout

    ExtrinsicIntrinsic

    D

    n

    N

    1

    in

    Temperature

    D

    Alam ECE606S09 7

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    PhysicalInterpretation

    Freezeout

    ExtrinsicIntrinsic

    D

    n

    N

    1

    in

    Temperature

    D

    Alam ECE606S09 8

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    ElectronConcentrationwithDonors

    = =FC FC( E )E E

    C

    E

    CNn e e eN

    1 2

    +

    =

    + DFD E

    D

    ( E )N

    e

    N

    =

    c D

    D

    ( E E )

    N

    n1

    +

    DN

    n

    CN N

    Alam ECE606S09 9

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    ElectronconcentrationwithDonors

    + =Dp n

    01 2

    F V B C F B

    F D B

    ( E E ) / k T ( E E ) / k T DV C ( E E ) / k T

    N N e N e

    e

    + =

    +

    2

    0 + =i Dn

    n

    Nn

    2 = i p n n

    + N

    Alam ECE606S09 10

    .

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    HighDonordensity/FreezeoutT2

    0 + =i Dn N

    n

    1

    +N

    Freeze IntrinsicD i

    DND

    n

    N

    1

    out Extrinsic

    1

    +N

    n

    Tem erature

    i

    D

    n

    N

    0 + =D N N N n n 1 24

    1 1

    = + D

    Nn

    N N

    Alam ECE606S09 11

    2 e

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    Freezeout/ExtrinsicT

    ( )C D E E / kT CD

    N N e N

    1 2

    4 = D

    N N

    2 N

    n

    N 1

    Freezeout Extrinsic

    Intrinsic

    N

    i

    D

    n

    N

    21 1

    2

    +

    D

    N

    TemperatureD

    Alam ECE606S09 12

    hole concentration by nxp=ni2

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    Extrinsic/IntrinsicT

    2for

    1

    +

    =