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This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/find/eesof
Agilent EEsof EDA
resentaton on omentum
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Keefe Bohannan
Agilent EEsof Applications Engineer
April 2003
ADS Momentum
A Half-Day Seminar
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Momentum Seminar
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
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Momentum Seminar
What is meant by Planar EM simulation ?
Substrate - multiple dielectrics
Metals - traces on different layers forming component aninterconnect
Vias - connecting different layers
Method of Moments techniqueSometimes referred to as 2.5D
It does NOT include:
Arbitrary 3D structures
Horn Antennas
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Momentum Seminar
Why are Planar EM Simulators used ?
No simple analytical model exists
Coupling between conductors or layers is significant
Arbitrary planar geometry
Narrow frequency response not captured by analytical mo
Radiation patterns of planar antennas
CPW transmission lines
When full 3D analysis would take too long
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Momentum Seminar
How are Planar EM Simulators used ?
Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh Simulation > Component > Optimization
Outputs
S-parameters
Current visualization
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Momentum Seminar
Creating/importing artwork in LayoutCreate
Schem
Import
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Momentum Seminar
Create
Schem
Import
Everything is placed on a layer
There are 39 default layers
User may add new layers, remomodify layer names and propert
User may define name, color, p
(outlined/filled), and line style a Layers may be set to be visible/
selectable/unselectable, and ins
Items on unselected layersedited / moved / deleted
Only one layer is insertab
Objects can only be cTO the insertable (moved FROM any se
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Preferences which apply to things not yet placed:
Trace, Placement, Entry/Edit, Units/Scale,Component Text, Text
Preferences which apply to things already placed:
Select, Grid/Snap, Pin/Tee, Display, Layoutunits
Preferences for schemaseparately
Preferences Setting are
layout.prf and schemat
Preferences files from Options > Preferences
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Creating/importing artwork in Layout
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Momentum Seminar
Create
Schem
Import
Creating/importing artwork in Layout
Simplify
using
(flattens
m
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Momentum Seminar
How are Planar EM Simulators used ?
Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh Simulation > Component > Optimization
Outputs
S-parameters
Current visualization
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www.agilent.com/find/emailupdates
Get the latest information on the
products and applications you select.
www.agilent.com/find/agilentdirect
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www.agilent.com
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Revised: March 27, 2008
Product specifications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/find/eesof
rnte n , ay ,5989-9596EN
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This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/find/eesof
Agilent EEsof EDA
eta e resentaton on omentum - art o
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Momentum Seminar
Using Momentum
Enable regular Momentum or Momentum RF
Define Substrate and Metallization (pre-comput
Modify the type and impedance of ports
Describe a possible Substrate enclosure
Create/modify Momentum Component to be use
or co-optimization
Define Mesh parameters (pre-compute option)
Setup and Perform a Momentum simulation (pla
Setup and Perform a Momentum optimization (g
Display Visualization (S-parameters, current de
parameters) and Radiation patternsExport 3D files for HFSS
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Momentum Seminar
Using Momentum: Selecting the Analysis
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Click this submenu to Momentum
MomentumR
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Momentum Seminar
Momentum versus MomentumRF: A Snap
Momentum features:
Full-Wave EM Simulation
Rooftop Basis Function
Rectangular and Triangular Cells
For most passive geometry
Full accuracy for all circuit sizes
No inherent upper frequency limit
Potential instability at f
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Momentum Seminar
Status window provides rule of thumb frequency
for which the structure is electrically small
How do I know?
Momentum versus MomentumRFElectrically Small condition for Momentum RF
D
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Momentum Seminar
Momentum versus MomentumRFPlanar EM Simulation Basics
Physical Design
Substrate
Metallization
Ports
Method of Moments
Meshing
Rooftop functions
B1(r) B2(r)
I1 I2
/10J(r) = I1B1(r) + I2B2(r)Heywhere did
this equation
come from?
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If one then transforms these equations to the integral form, the mixed potential integral e
form as a linear integral operator equation follows:
Here, J(r) represents the unknown surface currents and E(r) the known excitation of the proble
layered medium acts as the integral kernel. The unknown surface currents are discretized by m
metallization patterns and applying an expansion in a finite number of subsectional basis functio
Maxwells Equations
E= -B/t Faradays LawH= J+ D/t Amperes LawD= Gausss LawB= 0 No Name (Gausss Law for Magnetism)
where
E= Electric Field Intensity Vector
H= Magnetic Field Intensity Vector
D= Electric Flux Density (Electric Displacement Vector)
B= Magnetic Flux Density Vector
Ohhhhsorry I
asked.
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Momentum versus MomentumRFPlanar EM Simulation Basics
B1(r) B
I1 I2
I1 I2
C11
C12
L11 L2
L13L12
R22
/10
Method of Moments
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L] + 1/j[C]-1
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Momentum versus MomentumRFFullwave versus Quasi-Static: Fullwave
Fullwave electric & magnet
Includes space and surface
[L(w)] & [C(w)] are complex
[Z(w)] matrix reload CPU in
jkRR
e1Fullwave EM
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L()] + 1/j[C()]-1
[S]
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Momentum versus MomentumRFFullwave versus Quasi-Static: Quasi-Static
Electro- and magneto-st
Near field / low freq ap
L(w) = L0+ L1wR + L2(
C(w) = C0+ C1wR + C
Neglects far field radia
[L0] & [C0] are real and
[Z0] matrix reload very
1 e jkRRQuasi-Static EM
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Zo].[I]=[V]
[Zo] = [R] + j[Lo] + 1/j[Co]-1
[S]
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Momentum versus MomentumRFA Summary of Effects Included
quasi-static inductance . . . . . .
quasi-static capacitance . . . . .
DC conductor loss (s) . . . . . . . .
DC substrate loss (s) . . . . . . . .
dielectric loss (tan d) . . . . . . . . . . . . . . . . . . . . . . . . . . .
skin effect loss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
substrate wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
space wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Layout
S parameters
RF
Spice model S p
Spice Momentum RF MomentumDC
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Using Momentum: Creating Substrate Sta
Mapping Layout Layers as Metallization L
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
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Using Momentum: Creating Substrate Sta
Mapping Layout Layers as Metallization L
Once you have created or imported your artwork
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Using Momentum: Creating Substrate Sta
Mapping Layout Layers as Metallization L
be sure to define (or open) your substrate stack-up and map t
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Using Momentum: Creating Substrate Sta
Mapping Layout Layers as Metallization L
Greens Function Substrate Calculation Time
Students Guide A-36
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Using Momentum: Creating Substrate Sta
Mapping Layout Layers as Metallization L
A note on layout layer conductivity
Conductivity defi
Perfe
(Rea
(Rea
Imped
The parameters s
toward a conduc
does NOT affect
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Momentum Seminar
Momentum treats all conductors as having zero thickness. However, the conductivity and thickness c
frequency dependent losses in the metallization patterns.
Momentum uses a complex surface impedance for all metals that is a function of conductor thickness
At low frequencies, current flow will be approximately uniformly distributed across the thicknes
this minimum resistance and an appropriate internal inductance to form the complex surface imp
At high frequencies, the current flow is dominantly on the outside of the conductor and Moment
impedance that closely approximates this skin effect.
At intermediate frequencies, where metal thickness is between approximately two and ten skin
transitions between those two limiting behaviors.
This surface impedance
is added to the Method of Moments approach that is used for
Momentum in g
The formula used is a combination of a high-frequency conductivity and a low-frequency bulk resistivi
approaches (LF bulk behaviorHF surface impedance) transition seamlessly.
The formula is:
Z = coth() * Zcwhere Zc = the HF impedance and coth() is the correction for finite thickness
Zc = 0.5 * sqrt(j * 0 * /(+ j * 0* ))
= 0.5 * thickness * sqrt(j * 0 * * (+ j * 0* ))where = 2 * * fand = conductivity = 1/resistivity [in Siemens/meter]
The meshing density can affect the simulated behavior of a structure. A more dense mesh allows curr
and can slightly increase the loss. This is because a more uniform distribution of current for a low den
resistance
Using Momentum: Creating Substrate Stack-ups
Layout Layers as Metallization Layers:Loss Model u
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Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
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Placing and Defining PortsConsiderations
Keep the following points in mind when adding ports to circuits to be simulated
The components or shapes that ports are connected to must be on layout laymetallization layers that are defined as strips or slots. Ports cannot be direct
Make sure that ports on edges are positioned so that the arrow is outside of inwards, and at a straight angle.
Make sure that the port and the object you are connecting it to are on the saconvenience, you can set the entry layer to this layer; the Entry Layer listbobar.
A port must be applied to an object. If a port is applied in open space so thaobject, Momentum will automatically snap the port to the edge of the closes
apparent from the layout, however, because the position of the port will not If the Layout resolution is changed afteradding ports that are snapped to ed
the ports and add them again. The resolution change makes it unclear to whsnapped, causing errors in mesh calculations.
Note Do not use the ground port component (Component > Ground) in circusimulated using Momentum. Either add ground planes to the substrate or use
ports.
(Ground port component toolbar button: )
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Port Type
Single
(default)
Internal
Differential
Coplanar
Common Mode
Ground Ref.
General Description
Calibrated to remove mismatch at port
boundary (might also call this a
transmission line port)
Not calibrated (might also call this a
direct excitation port)
Two ports with opposite polarity
Two ports with opposite polarity
Two ports with the same polarity
An explicit ground reference for aSingle or Internal port.
Place
Ed
Edg
Sur
Ed
Ed
Ed
EdgSur
CPW NOTE: For finite ground planes, use Ground Reference ports and Interna
Placing and Defining PortsDescription of Momentum Port Types
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It is connected to an object that is on either a strip or slot metallization laye It can be applied only to the edge of an object. The port is external and calibrated. The port is excited using a calibration p
removes any undesired reactive effects of the port excitations (mode mismaboundary. This is performed by extending the port boundary with a half-wavcalibration (transmission) line. The frequency wavelength selected during thsimulation process is used to calculate the length of the calibration line. Forabout the calibration process, refer to "Calibration and De-embedding of theon page A-7in the Momentum manual.
The port boundary can be moved into or away from the geometry by specif
offset. S-parameters will be calculated as if the port were at this position. When two or more single ports are on the same reference plane, coupling eparasitics affects the S-parameters. The calibration process groups the portcoupling in the calibration arms is included in the S-parameter solution.
If the port is connected to an object on a strip layer, the substrate definitionleast one infinite metal layer: a top cover, ground plane, or a slot layer, or areference must be used in addition to the port.
If the port is connected to an object that is on a slot layer, the port has pola
Tip It is not necessary to open the Port Editor dialog box to assign this portwithout a port type specified is assumed to be a single port.
Placing and Defining PortsSingle Port Properties
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Placing and Defining PortsDefining a Single Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
In the Port Editor dialog box, under Port Type, select Single.
Enter the components of the port impedance in the Real and Iand specify the units.
You can shift the port boundary, also referred to as the port reShifting the boundary enables a type of de-embedding procesadds or subtracts electrical length from the circuit, based on thimpedance and propagation characteristic of the port. Enter thReference Offset field, and select the units. A positive value mboundary into the circuit, a negative value moves the port bouthe circuit.
Click Applyto add the definition to the port.
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Placing and Defining PortsSingle Port: Avoiding Overlap (of calibration arm)
Be aware that when using single ports, the calibration arm applied tlong enough to overlap another element in the circuit. In this case, changed to an internal port type, and no calibration will be performeoccurs, a message will be displayed during simulation in the Status the change.
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Placing and Defining PortsSingle Port: Applying Reference Offsets
Reference offsets enable you to reposition single port types in a layout and thereby adjust electrical
changing the actual drawing. S-parameters are returned as if the ports were placed at the position o
Why Use Reference Offsets?The need to adjust the position of ports in a layout is analogous to the need to eliminate the effect ohardware prototypes. When hardware prototypes are measured, probes are connected to the input Under Test (DUT). These probes feed energy to the DUT, and measure the response of the circuit. Uresponse characterizes the entiresetup, that is, the DUT plus the probes. This is an unwanted effectreflect the characteristics of the DUT alone. The characteristics of the probes are well known, so me
mathematically eliminate the effects of the probes, and present the correct measurements of the DUThere are significant resemblances between this hardware measurement process and the way MomeMomentum, the probes are replaced by ports, which, during simulation, will feed energy to the circuMomentum port feeding scheme also has its own, unwanted effect: low-order mode mismatch at theeliminated by the calibration process. However, in order for this calibration process to work well, it imode is characterized accurately. This can only be accomplished when the distance between the pordiscontinuity is sufficiently large, that is, there exists a feedline that is long enough to provide this d
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Placing and Defining PortsSingle Port: Allowing for Coupling Effects
If you have two or more single ports that lie on the same reference plane, the catake into account the coupling caused by parasitics that naturally occurs betweenyields simulation results that more accurately reflect the behavior of an actual cirThe figure below helps illustrate which ports will be grouped in order for the calibaccount for coupling among the ports. In this setup, only the first two ports will bthird port is an internal port type and the fourth port is on a different reference pthough the second port has a reference offset assigned to it, for this process theyon the same plane and their reference offsets will be made equal.If you do not want the ports to be grouped, you must add a small thickness of mobject that one of the ports is connected to. The ports will no longer be on the sa
be considered part of the same group.
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Placing and Defining PortsInternal Port Properties
Internal ports enable you to apply a port to the surface of an object in your desports, all of the physical connections in a circuit can be represented, so your simaccount all of the EM coupling effects that will occur among ports in the circuit.caused by parasitics are included in your simulation results because internal po
You should avoid geometries that allow coupling between single and internal poparameters.
An example of where an internal port is useful is to simulate a bond wire on theAnother example of where an internal port is necessary is a circuit that consistsconnect to a device, such as a transistor or a chip capacitor, but this device is nyou are simulating. An internal port can be placed at the connection point, so enot part of the circuit you are simulating, the coupling effects that occur amongdevice will be included in your simulation.
Internal ports are often used in conjunction with ground references.
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Placing and Defining PortsInternal Port Properties
It can be applied to the interior of a circuit by applying it to the s It can be applied to the edge of an object. It can be applied to objects that are on strip layers only. The orientation of the port is not considered if it is on the surface
description of port orientation, refer to "Adding a Port to a Layoutthe Momentum manual.)
No calibration is performed on the port. Because no calibration is port, the results will not be as accurate as with a single port. How
difference in accuracy is small.
Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
Click Apply.
Defining an Internal Port
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Placing and Defining PortsIllustration of Internal Port Excitation: Direct Point Fee
direct excitation point feed
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direct excitation
line feed
Placing and Defining PortsIllustration of Internal Port Excitation: Direct Line/Edge
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Placing and Defining PortsDifferential Port Properties
Differential ports should be used in situations where an electric field between two ports (odd modes propagate). This can occur when: The two ports are close together There is no ground plane in the circuit or the ground plane is relati One port behaves (to a degree) like a ground to the other port, an
ports is developed. The ports are connected to objects that are on strip metallization la The electric field that builds up between the two ports will have an
that should be taken into account during a simulation. To do this, u
Differential ports have the following properties: They can be applied to objects on strip layers only. They are assigned in pairs, and each pair is assigned a single port Each of the two ports is excited with the same absolute potential, b
polarity. The voltages are opposite (180 degrees out of phase). Theopposite in direction when the ports are on two symmetrical lines, direction is approximated for other configurations.
The two ports must be on the same reference plane.
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Placing and Defining PortsDifferential Port Numbering
Note: Port numbers for differential ports are treated in the following manner: on thto see the port numbers (instance names) that were assigned to each port when thlayout. Use the Momentum Port Editor dialog box to identify which pair of ports willport.
When Momentum simulates designs containing non-consecutive port numbers, the consecutive numbers in the resulting data file. The lowest port number is remappednumbers are remapped in consecutive order. The port numbers are not changed inmessage in the Status window announces the change, and lists the mappings.
For example, if you are simulating a design with ports numbered 1 and 3, the followinforms you of the changes:
Layout has non-consecutive port numbers.
Output files will have consecutive port numbers.
layout port -> output port1 -> 1
3 -> 2
Also, when you view results, you will see S-parameters for the differential port numabove, the layout would show p1, p2, p3, p4. The S-parameter results will be for coP1 and P3 only.
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Placing and Defining PortsDefining a Differential Port
Choose Momentum > Port Editor. Select the port that you want to assign this type
to. Note the port number. In the Port Editor dialog box, under Port Type,
select Differential. Under Polarity, make sure that Normalis
selected. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type,
select Differential. Under Polarity, select Reversed. Under Associate with port number, enter the
number of the previously-selected port.
Click Apply. Repeat these steps for other differential port pairs
in the circuit. Click OKto dismiss the dialog box.
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Momentum Seminar
direct excitationn
line feed
line feed
ground reference
1.i
-1.i
Students Guide A-32
Placing and Defining PortsIllustration of Differential Port Excitation: Direct Point
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Placing and Defining PortsCoplanar Port Properties
This type of port is used specifically for coplanar waveguide (CPW) cito a differential port, but coplanar ports are applied to objects on slowhere slots are used in the design). Coplanar ports should be used inan electric field is likely to build up between two ports. This can occu The two ports are close together Polarity between the ports develops The ports are connected to objects that are on slot metallization la The electric field that builds up between the two ports will have an
circuit that should be taken into account during a simulation. To dcoplanar ports.
Coplanar ports have the following properties: They can be applied to objects on slot layers only. They are assigned in pairs. Each of the two ports is excited with the same absolute potential,
opposite polarity. The voltages are opposite (180 degrees out of pcurrents are equal but opposite in direction when the ports are on
lines, and the current direction is approximated for other configura The two ports must be on the same reference plane.
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Placing and Defining PortsCoplanar Port Polarity
Note: Poare treatewhich diff
Be careful when assigning polarity to coplanar ports.
An incorrect choice of polarity can change the phase oftransmission type S-parameters by 180 degrees.
To verify polarity, zoom in on a coplanar port. You willnotice two sets of arrows applied to the port. Oneappears when you add the port component to thecircuit. The second will appear after the mesh iscomputed. It indicates the direction of the voltage overthe slot.
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Placing and Defining PortsDefining a Coplanar Port
Note Coplanar ports can be applied to objects on slot l
Choose Momentum > Port Editor. Select the port that you want to assign this type to. N
number. In the Port Editor dialog box, under Port Type, select
Under Polarity, make sure that Normalis selected. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type, select Under Polarity, select Reversed. Under Associate with port number, enter the number
previously-selected port. Click Apply.
Repeat these steps for other differential port pairs in Click OKto dismiss the dialog box.
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Placing and Defining PortsCoplanar Port Example: examples/Momentum/Microwav
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Placing and Defining PortsCoplanar Port Example: examples/Momentum/Microwave
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Placing and Defining PortsCoplanar Port Example
Note
displ
curre
elect
slot m
Ther
visua
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Placing and Defining PortsCommon Mode Port Properties
Use common mode ports in designs where the polarity of fields is thor more ports (even modes propagate). The associated ports are exabsolute potential and are given the same port number.
Common mode ports have the following properties: They can be applied to objects on strip layers only A ground plane or other infinite metal (such as a cover) is require
design
Two or more ports can be associated Associated ports are excited with the same absolute potential (an The ports must be on the same reference plane
Note Port numbers for common ports amanner: on the layout, you will continue (instance names) that were assigned to eadded to the layout. Use the Momentum identify which group of ports will be treat
Also, when you view results, you will see port numbers. In the example above, theThe S-parameter results will be for comb
Note: C
thick c
(more o
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Placing and Defining PortsDefining a Common Mode Port
Choose Momentum > Port Editor. Select the port that you want to assign this type to. N
number. In the Port Editor dialog box, under Port Type, select C
Mode. Click Apply. Select the second port. In the Port Editor dialog box, under Port Type, select C
Mode. Under Associate with port number, enter the number
that you selected first. Make sure that the value in thwith port number field is the same for additional portsexample, if you were associating three ports and the fassigned as port 1, for the second and third port, the entered into the Associate with port number field wouthe first port you choose, no value is entered in this fi
Click Apply. Repeat these steps for other common mode ports in t Click OKto dismiss the dialog box.
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Placing and Defining PortsGround Reference Port
Ground references enable you to add explicit ground references to a cibe necessary if implicit grounds are in your design.Implicit ground is the potential at infinity, and it is made available to ththe closest infinite metal layer of the substrate. Implicit grounds are usports and with single ports that are connected to objects on strip metaThere are instances where the distance between a port and its implicit large electrically, or there are no infinite metal layers defined in the sucases, you need to add explicit ground references to ensure accurate sFor more information on using ground references, refer to "Simulating Ports and Ground References" on page A-10in the Momentum manual
You can apply ground references to the surfaces of object. The object mmetallization layers.
Note: Multiple ground reference ports can be associated with the samassociated with a single port, the ground reference port should be a poedge of an object in the same reference plane as the single port.
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Placing and Defining PortsDefining a Ground Reference Port
Choose Momentum > Port Editor.
Select the port that you want to assign as the ground re
In the Port Editor dialog box, under Port Type, select Gr
Under Associate with port number, enter the numbeinternal port that you want to associate with this groundsure that the distance between the port and ground refesmall.
Click Apply.
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Placing and Defining PortsCPW with Finite Ground Planes using INTERNAL and G
Ports 1 and 2 are internal.
Ports 3, 4, 5, and 6 are ground reference . The groun
associated with the internal port using the editor.
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Placing and Defining PortsRemapping Port Numbers
Some designs contain non-consecutive port numbers. This results in sare difficult to use. When Momentum simulates designs containing nonumbers, the ports are remapped to consecutive numbers in the resulowest port number is remapped to 1, and remaining numbers are remorder. The port numbers are not changed in the design itself. A messawindow announces the change, and lists the mappings.For example, if you are simulating a design with ports numbered 37 astatus message informs you of the changes:
Layout has non-consecutive port numbers.
Output files will have consecutive port numbers.
layout port -> output port
37 -> 1
101 -> 2
Port number remapping is done only for sampled and AFS CITIfiles anS-parameter datasets. It is not done for Visualization and far field filedone at the CITIfile level, and propagates to the dataset file. After remare in sync with the new port numbering.
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complete list is available at:
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Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacific
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/find/contactus
Revised: March 27, 2008
Product specifications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/find/eesof
Printed in USA, May 19, 20035989-9597EN
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Details of Momentum
Solution process
Select Mode
Substrate definition
Port SetupMesh Generation
Planar Solve
Display Results
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Defining Mesh ParametersMesh Setup Control
Global mesh is the default.But you have choices.
In general, small
patterns are more
accurate but take
more time to solve.
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Defining Mesh ParametersGlobal Mesh example with Edge Mesh
1 - Port2 - Calibration Line
3 - Mesh
4 - Edge Mesh
1
4
3
2
NOTE: You can view the mesh, ports, an
before simulating and make adjustments
Here, the cell size is the sall parts of the geometry,
the edges around each p
The calibration line
is automatically
drawn when the
port is defined -
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Defining Mesh ParametersPrimitive Mesh example
The centerprimitiveof this geometry has a
different mesh (50 cells/wavelength) than th
outside geometries (20 cells/wavelength).
1
2
You can combine primitive m
layer mesh, and global mesh.
Next
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Discretion Error - Longitudinal
Number of cells/wavelength
determines samples used forapproximation of true currents
Typical cells/wavelength is 20
30 or more is fine, but will slow down
the simulation
Minimum required to retain high-frequency accuracy is 10
Can retain accuracy AND speed with
10 cells/wavelength AND edge mesh
Remember, can also have layer-specific
meshes (or even object-specific
meshes) which allows finer mesheswhere needed and coarser meshes
where current density is not as high
(such as a finite ground plane)
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Edge Mesh Accuracy
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Mesh: Momentum versus MomentumRFMomentum RF & Polygon Mesh
Meshing complex geometries with POLYGONAL cells
Eliminates slivery triangles
Eliminates redundant R,L,C elements
Uncompromised accuracy for RF frequencies
Strongly reduced computer memoryStrongly reduced computation time
me
reduction
reduction
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Using Momentum
Solution process
Select Mode
Substrate definition
Port SetupMesh Generation
Planar Solve
Display Results
I1
I1
L1
Method of Moments
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L] + 1/j[C]-1
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The Low-frequency Breakdown Problem
This problem is essentially one of mathematical aspect ratios. Whenfunctions are used, the interaction matrix contains all of the reactan
matrix. As frequency approaches zero, the inductive reactances app
capacitive reactances approach infinity. This results in an ill-conditio
Any tool that uses rooftop functions as the sub-sectional basis funct
problem.
Momentum (not Momentum RF) experiences this low-frequency limitaccount for this, interpolation is used for three frequencies (in additi
sweeps): DC, f0, and 2f0. The low-frequency limit (f0, typically in k
selected in an empirical way and is a function of cell edge lengths an
increases as cell sizes decrease (resulting in shorter edges).
Momentum RF alleviates this problem by breaking the rooftop
star and loop basis functions.
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MomentumRF & Star-Loop Basis Function
star basis functionloop basis function
Loop basis functions are solenoidalStar basis functions are irrotational Rooftop ba
Star-loop ba
db(S11)
db(S11)
1
- give well-conditioned interaction
matrix at low frequencies
- eliminate LF breakdown of
numerical solution
- give stable, accurate solutionsdown to DC (both magnitude and
phase)
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Using Momentum
Solution process
Select Mode
Substrate definition
Port SetupMesh Generation
Planar Solve
Display Results
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Momentum Accuracy: A couple of absolu
Directly simulated frequency points have 60 dB accuracy. (Thcharacterized on through-lines. In other words, the observed n
those structures is ~ -60 dB. This does not mean that valid re
can not be obtained for designs with an isolation or other figur
-60 dB.)
For an AFS sweep, the simulated frequency points have 60 dBAFS calculated frequency points have ~ 50 to 60 dB accura
The rest depends on how accurately you can define your proble
Here are a few benchmarks
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Momentum
Mesh: 20 cells/wavelength, 3 GHz
Frequencies: 14
Matrix size : 218
Process size : 14.13MB User time : 5 m 14 s
Momentum RF
Mesh: 20 cells/wavelength, 3 GHz
Frequencies: 10
Matrix size : 56
Process size : 7.59 MB User time : 45 s
(*) Example from National Semiconductor
LTCC Filter Design
7.29
mm
[1] 25.2 mil LTCC
GND
AIR
[2] 3.6 mil[3] 7.2 mil
d
pha
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RFIC/MMIC Applications
Momentum
Mesh: 20 cells/wavelength, 5 GHz
Frequencies: 7
Matrix size : 274 Process size : 10.29 MB
User time : 11m 09s
Momentum RF
Mesh: 20 cells/wavelength, 5 GHz
Frequencies: 7
Matrix size : 35 Process size : 3.33 MB
User time : 1m 39s
0.30
mm 0.80
mm
[1] 600 um Silicon =12.5
GND
AIR
[2] 1.7 um
[3] 1.55 um
r=3.9
r=3.9
PC-NT Pentium II workstation (330 MHz)
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RFIC / MMIC Applications
Momentum
Mesh: 20 cells/wavelength, 50 GHz
Frequencies: 12
Matrix size : 221 Process size : 6.32MB
User time : 2 m 03 s
Momentum RF
Mesh: 20 cells/wavelength, 50 GHz
Frequencies: 10
Matrix size : 203 Process size : 4.50 MB
User time : 0 m 26 s
[1] 100 um GaAs
GND
AIR
0.76
mm1.65
mm
RPC-NT Pentium II workstation (330 MHz)
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Microwave Lowpass Filter (Stripline)
Momentum
Mesh: 20 cells/wavelength, 15 GHz
Frequencies: 20
Process size : 18.07MB
User time : 36 m 07 s
Momentum RF
Mesh: 20 cells/wavelength, 15 GHz
Frequencies: 15
Process size : 12.29 MB User time : 2 m 21 s
6.0 mm
25.4
mm
Rule of thum
[1] 31 mil Duroid
GND
[2] 31 mil Duroid
GND
PC-NT Pentium II workstation (330 MHz)
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RF Board Power/Ground
Momentum Momentum RF
Measurements
[1] 59 mil
AIR
GND
FR4
50.8
mm
76.2
mm
P1 P2
50.8
mm
76.2
mm
P1 P2
Rule of thumb: freq < 1.63 GHz
PC-NT
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RF Board Application
Mo
Me
Po
Fre
Ma
Pr
Us
reduced polygonal mesh
rectangular & triangular mesh
Momentum RF
Mesh: 20 cells/wavelength, 1 GHz
Ports: 60
Frequencies: 6
Matrix size : 733
Process size : 59.35 MB User time : 48m 24s
S
35.60 mm
43.67 mm
[1] 30 mil
AIR
GND
FR4
PC-NT Pentium II workstation (330 MHz)
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Packaging Application
S(1,3)
S(1,1)
Momentum
Mesh: 20 cells/wavelength, 5 GHz
Matrix size : 8244
Process size : > 1 GB
User time : > 2 days
Momentum RF
Mesh: 20 cells/wavelength, 5 GHz
Matrix size : 1354
Process size : 106.57MB
User time : 5h 17m 53s
port 1
port 2
port 3
7.6 mm
7.6 mm
port 4
ref 3
ref 4
1 2
4 3
ref 3ref 4
GNDVboard
Vchip
PC-NT Pentium II workstation (330 MHz)
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Microwave Applications
Momentum
Mesh: 10 cells/wavelength, 20 GHz
Frequencies: 18
Matrix size : 181
Process size : 2.92MB
User time : 1 m 02 s
Momentum RF
Mesh: 10 cells/wavelength, 20 GHz
Frequencies: 14
Matrix size : 122
Process size : 2.13 MB
User time : 0 m 09 s
radia
pow
mag(S21)
mag(S11)[1] 25 mil Alumina
GND
AIR
6.65
mm
9.90
mm
Rule oPC-NT Pentium II workstation (330 MHz)
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Microwave Applications
Momentum
Mesh: 20 cells/wavelength, 7 GHz
Frequencies: 27
Process size : 8.26MB
User time : 7 m 53 s
Momentum RF
Mesh: 20 cells/wavelength, 7 GHz
Frequencies: 25
Process size : 4.75 MB
User time : 0 m 29 s
5.21
mm
24.82 mm
mag(S2
mag(S11
Rule o
[1] 25 mil Alumina
GND
[2] 185 mil AIR
PC-NT Pentium II workstation (330 MHz)
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Digital Application
full boardisolated trace
port 1
port 2
port 1
port 2
S(1,1)
isolated trace
S(1,2)
isolated trace
Momentum
Momentum RF
S(1,1)
full board
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Digital Application
isolated trace
port 1
port 2
0.4 GHz
output
S(1,1)
isolated trace
S(1,2)
isolated trace
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Digital Application
isolated trace
port 1
port 2
harmonic signal
2.33 GHz
no output
S(1,1)
isolated trace
S(1,2)
isolated trace
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Digital Application
harmonic signal
2.33 GHz
harmonic signal is coupled to neighbor
and spread around the board
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Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/find/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacific
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/find/contactus
Revised: March 27, 2008
Product specifications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/find/eesof
Printed in USA, May 19, 20035989-9598EN
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This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/find/eesof
Agilent EEsof EDA
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Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum Creating/importing artwork in ADS Layout
Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1] Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2] Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
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freq Independent frequency variable GAMMAn Modal propagation constant of portn(calculated
differential, and coplanar ports only)
PORTZn Impedance of Portn
S S-matrix, normalized to PORTZn
S(i,j) S-parameters for each port pairing, normalized t
S_50 S-matrix, normalized to 50 ohms
S_50(i,j) S-parameters for each port pairing, normalized t
S_Z0 S-matrix, normalized to Z0
S_Z0(i,j) S-parameters for each port pairing, normalized t
Z0n Characteristic impedance of Port n (calculated fdifferential, and coplanar ports only, others are
Momentum DatasetsVariables Available in the Standard Dataset
(Note that these are included in the datasets for Momentum simulations bu
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All standard dataset variables, plus
S_CONV Boolean results for AFS convergence (succof the entire S-matrix at a given frequency
S_CONV(i,j) Boolean results for AFS convergence (succ
of S(i,j) at a given frequency
S_ERROR Estimated error of the entire S-matrix at a (< -60 dB for converged frequency points)
S_ERROR(i,j) Estimated error of S(i,j) at a given frequenc(< -60 dB for converged frequency points)
Momentum DatasetsVariables Available in the AFS Dataset
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Adaptive Frequency Sampling
Simple Answer to Convergence
AFS has converged unless it tells you that it hasn't converged (e.g., when the mathat you specified was too low)
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AFS Convergence Illustration
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AFS Convergence
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THETA Swept parameter of planar cut
PHI Swept parameter of conical cut
Etheta & Ephi Absolute E field strength (V) of theta and phi fa
Htheta & Hphi Absolute H field strength (A) of theta and phi fa
Elhp & Erhp Normalized E field strength of LHCP and RHCP
ARcp Axial ratio, derived from LHCP and RHCP far-fi Eco & Ecross Normalized E field strength of co and cross pol
ARlp Linear polarization axial ratio, derived from co far-field components
Gain, Directivity Gain, Directivity, Efficiency (in %), and Effectiv
Efficiency,Effective Area
Power Radiation intensity (in watts/steradian)
Momentum DatasetsVariables Available in the Far-field Dataset
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Currents (surface currents)
S-parameters (mag, re, im, phase, and dB of S(i,j))
Transmission line data (propagation constant, characteri
Far-fields (radiation patterns & axial ratio in 3D and 2D)
Antenna parameters (gain, directivity, pointing angle, etc
Momentum VisualizationMomentum Visualization Enables You to View and Ana
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Momentum Visualization: Surface Currents
When you scroll from 0-360,
you are actually varying thephase which illustrates thee^jwt time dependency ofthe surface currents
The lower and upper values inputinto these fields represents thelowest and highest values of the
surface current density (A/m)which will be viewedNoteffecurreffe
You also have theoption to look at theanimated currentswhen click on the
Display Propertiesbutton
Note: when you are viewing the results for a slot metallization layer, the MAGNETIC currenELECTRIC currents. You will also be viewing the mesh in the slots instead of a mesh on themesh for a slot layer.
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Momentum Visualization: Surface Currents
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Momentum Visualization:Far-field Radiation Patterns and S-parameters
R
M
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ADS Data Display: S-parameters, L, and Q of an InduPowerful post processing data advantage of countless built-in
flexibility to wrote your own (thequations in a schematic or equat
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Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/find/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacific
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/find/contactus
Revised: March 27, 2008
Product specifications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/find/eesof
Printed in USA, May 19, 20035989-9599EN
5/21/2018 Presentation on ADS Momentum
104/345
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/find/eesof
Agilent EEsof EDA
eta e resentaton on omentum
vanceTopics - (Part 1 of 5)
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Momentum Seminar
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1] Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
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Momentum Component (EM/circuit co-simulation
ADS circuit simulation
Layout setup
Momentum C
EM/Circuit co-simulation from theschematic environment
Transparent integration of electromagneticsimulators at the schematic design level
Include physical layout parasitics in
schematic Momentum simulation options accessible
from schematic
Compiled Layout Components listed inprojects hierarchy
Model database for reuse option ADS 2002C: EM/Circuit co-
optimization
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Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher
EM/Circuit co-simulation from theschematic environment
C:\ADS2002\Examples\Momentum\emcktcosim\LTCC_prj
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Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher
EM/Circuit co-simulation from theschematic environment
C:\ADS2002\Examples\Momentum\emcktcosim\LNAEmCktCosim_prj
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Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher
Example begins wand uses Layout>Layout to create
2. Note that vendor component libraries
were utilized for lumped element andactive device artwork. Also note thata ground plane has been added withuniform clearance aroundtraces/components.
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Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher
3. A symbol is defined for the schematicsubcircuit and then it is placed in a toplevel design for simulation using the
component library browser. (Theresults of this simulation will becompared to the results of the nextsimulation, which will include thephysical effects.)
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Momentum Component (EM/circuit co-simulationExample included in ADS 2002 & higher 4. The artwor
include the poured grground planall connectbias, and onelements)
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
5. The standard example is then slightlymodified to include layout componentparameters (new in ADS 2002C).These parameters will be used to seethe effects of a via location on gain.
Modified version provided:
(LNAEmCktCosim_prj.zap)
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
6. The Layout/Momentum component isthen created
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
7. Next, the Layout/Momentum component is placed in a schematic using the compolike any other subcircuit/component). All of the lumped elements and the active the pins (ports in layout are replaced with pins in the Momentum Component sym
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
8. Once the model details are selected (Mode MomMW, MomRF, or data file; Frequproperties), the parameters of the Layout/Momentum component are then definedbe passed down from the top design. This is made possible by the next step, whParameters submenu.
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
9. The variables are now defined for this subcircuit. Note that we could have just pcomponent directly into the top level schematic, but this illustrates two methodsschematic.
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
10. The subcircuit that includes theLayout/Momentum component is thenplaced in a top level design for
simulation using the componentlibrary browser. (The results of thissimulation will be compared to theresults of the original simulation,which did not include the physicaleffects.)
11. Note the use of vswept using the component.
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Momentum Seminar
Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
12. When each iteration osimulation encounterLayout/Momentum co
new values for paramMomentum simulatioautomatically invokedbackground (for each not previously solved
Modified version provided:
(LNAEmCktCosim_prj.zap)
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Momentum Component (EM/circuit co-simulation)Example included in ADS 2002 & higher (slightly modified
13. Finally, the reare comparedthe Momentu
also be studieInitial s
Momen
Momen
with swModified version provided:
(LNAEmCktCosim_prj.zap)
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Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Adding Layout Parameters
Enables to sweep, tune or optimize geometrical va
layout
- typical dimensions (length, width, gaps, spacing,)
- interdependent layout modifications (e.g. length and width va
- port locations
Two ways to create a parameterized layout compon
1. Using nominal/perturbed layout artwork (Momentum Optimiz
2. Using existing (built-in or GCC defined) layout artwork macro
Nominal/Perturbed layout p
Subnetwork layout parame
NEW
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Adding Layout Parameters
Momentum > Component > Parameters
Opens the Layout Component Parameters dialog
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Adding Layout Parameters
Defining a Nominal/Perturbed Layout Parameter
Define the name
Define the type o
Enter the nomin Enter the pertur
Edit the perturba
if no AEL artwork macro available
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Adding Layout Parameters
Steps
1. Select points in layout
2. Select perturbation type3. Insert perturbation values4. Apply the perturbation
Repeat these stepsClick OK to terminate
AEL artwork macro is created
primitive layout component
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Adding Layout Parameters to a Subnetwork
Defining a Subnetwork Layout Parameter
Define the name
Define the type o Enter the defaul
Associate the pa
subnetwork pa
If artwork macro IS available
hierarchical layout component
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Adding Layout Parameters to a Subnetwork
Use the subnetwork layout parameter to set the parameter v
more subnetwork parameters in the design
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Creating a Component
Momentum > Component > Create/Update
Opens the Create Momentum Component dialog
Dialog Entries: Symbol, Model Parameters and Model Data
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EM Model Database
The simulated S-parameter models are
stored in an EM Model Database for later
reuse
During the Component Create/Update, the
user has the option to:
- delete all previous entries in the model
database
- add the last simulation results obtained
from Momentum simulation in Layout to
the model database
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Instance Parameter Dialog
Double clicking on the Layout Component Instances in the Sch
Environment opens the Instance Parameter Dialog
In the Model Page, the user can specify the
- Model Type selection
- Model Parameter values
- Model Database Reuse option
In the Display Page, the user can specify
which model parameters are visible in theschematic design
In the Parameters Page, the user can
specify the layout parameter values and
the optimization setup (optional)
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Model Interpolation
Pushing the Options.. button brings up
the Set Interpolation Options dialog
Allows to specify the interpolation delta
values for each layout parameter
Default values for the interpolation deltas are
provided (derived from the model parameters)
The EM model database can use
interpolation to significantly enhance
the efficiency of the co-simulation
The Layout Parameters are treated ascontinuous parameters
Instance Dialog box
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
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Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_pr
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Momentum Seminar
Momentum Co-OptimizationEM/circuit co-optimization (layout/Momentum component
Electronic
notebook for
LTCCEM/circuit co-
optimization
example
(shipped withADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
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eta e resentaton on omentum
vanceTopics - (Part 2 of 5)
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Momentum Seminar
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1] Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
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Momentum Seminar
1. Polygon
2. Rectangle or square
3. Polyline
Vias must
through ea
substrate l
through
An Aside: Vias in Momentum
For vias, only vertical currents and surface impedances are taken into accoumind that the horizontal and rotational currents are not included. One possi
be used to obtain more complete current calculations is to break up the via sshape, even that of a transmission line or spiral inductor) into a few thinner geometry on horizontal metallization layers as well. Make sure that providethickness parameters for only one of the horizontal metallization layers; othewill be calculated.
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An Aside: Vias in Momentum
Vias are treated as one cell (in the vertical axis);therefore, the thickness of substrates whichcontain vias is limited to ~ 1/10th to 1/20th ofa wavelength (at the highest simulationfrequency). Vias passing through thickersubstrates can be accurately represented bysplitting these thick substrates into multiple
layers.
Please note that you can view both the meshand the surface current density (A/m) of viastructures using Momentum Visualization
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Thick Conductor SimulationsMomentum model Finite Thickness Conductors
Zero thickness approach
loss formulation
Finite thickness approach
loss formulation
current modeling
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Thick Conductor SimulationsConductor Loss in Momentum: Zero Thickness Approach
The Surface Impedance Concept is used to modelconductor losses in metallizations
t
Zs(t,
3D conductor Sheet conductor
The Surface Impedance Model Zs(t,,) takes the fthickness and frequency dependency (skin effect) of thconductor loss into account
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Momentum Seminar
Thick Conductor SimulationsConductor Loss in Momentum: Zero Thickness Approach
( )tj
jZ
cs
coth
+=
)( jjc
+=
+=
s
s
jZ
coth
)1(
2
=s
>>
tZ
s
1=
s
s
jZ
)1( +=
LF :
HF :
t
s
LF currentsection of
HF currendepth sur
The Surface Impedance formula:
=4.5e7 S/m
1 MHz 7510MHz 23100MHz 7.1 GHz 2.
Skin depth
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Thick Conductor SimulationsConductor Loss in Momentum: Finite Thickness Approa
3D conductors:
drawn on 2 layers (, t/2) connected with vi
LF currents run in entire crosssection of the metalization
t/2
LF :
HF currents run in DOUBLE
skin depth surface layer
sHF :
Better loss modelingBetter current modeling (inductive)
Zs(t/2,,bottom me
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Thick Conductor SimulationsCurrent Modeling in Momentum for 3D Conductors
x,y surface currents on top and bottom of finitez-surface currents on vias (side walls of finite t
x
yz
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Thick Conductor SimulationsConductor Loss in Momentum - what to use?
Rule of thumb: w
t
w/t > 5h/w > 10
h
Use 1 zero thickness conductor with correct loss specific
other cases
2 metallization layers + vias
groun
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Thick-conductor Approach: Two Approaches
, t/2
, t/2 stripviastrip
2 metallization layers + viaslayer3: p
Air (E
Subst
thick conductor
Port 1
Port 2
For Single Trace Stimulus: Common-mode ports
Port 1
Port 2
For Two or More Coupled Traces: Single ports in layout, recombin
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Thick-conductor Approach: For Single Trace
Port 3
Port 1
For Single Trace Stimulus:
Common-mode ports in Layout/Momentum are
Port 2
Port 4
Example:
Ports 1&3 are associated ascommon-mode ports, as are
ports 2&4
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Momentum Seminar
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout Momentum versus Momentum RF Creating substrate stack-ups and mapping layout layers as metallization laye Placing and defining ports Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets Momentum Visualization: currents, fields, s-parameters, gamma, Z0 ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1] Momentum Co-simulation (EM/circuit co-simulation) using Layout Component Momentum Co-optimization (EM/circuit co-optimization) using Layout Compon Thick conductor simulations {LAB} Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC) Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: initial layout for
from schematic (substrate definition also updated from
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: verify substrate
metallization definitions
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: initial Momentu
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: save as new des
components to enable copy-to-layer for the thick-conduc
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: now begin copy
to the first two additional layers
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
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Thick-conductor Approach: For Single TraceMicrostrip Coupled-line Filter Example: now copy