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Presentation Infineon Austria Dr. Siegfried KRAINER Grenoble 2017-03-22
Infineon at a glance
Financials Market Position
Business Segments Employees
377 620 897 982
FY 13 FY 14 FY 15 FY 16
[EUR m]
Europe
15,176 employees
More than 36,000 employees worldwide (as of Sep. 2016)
Americas
3,691 employees
Asia/Pacific
17,432 employees
34 R&D locations 19 manufacturing locations
Revenue Segment Result Margin
15.2% 15.5% 14.4% 9.8%
3,843 4,320
5,795 6,473
41%
11%
17%
31%
Automotive
(ATV)
Industrial Power
Control (IPC)
Chip Card &
Security (CCS)
Power Management & Multimarket (PMM)
Revenue FY 2016
# 2 # 1
Automotive Power Smart card ICs
# 2
Strategy Analytics, April 2016
IHS Markit, October 2016
IHS Markit, July 2016
2 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
36,299 Employees Worldwide (as of 30 September 2016)
9,855
176
Mexico
Americas 3,691 employees
USA
2,042
337
Asia/Pacific 17,432 employees
2,119
10,210
2,004
Europe 15,176 employees
489
3,588
187
66
2,047
1,644
222 335
153
26
Romania
Sweden
Germany
Great Britain
Austria
Portugal
France
Italy Japan
Singapore
India
Malaysia
China
Korea
Indonesia
153
559 Hungary
Taiwan
49
20 Denmark
Philippines
11 Other Europe
7 Australia
3 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Your daily supporter Did you know that…
… in 7 out of the 10 top selling electric cars in 2015 the drivetrain is powered by
Infineon chips?
… in about half of the passports and ID‘s
worldwide is an Infineon security chip?
… in every third smartphone worldwide a silicon
microphone ensures good sound quality?
… in 45 percent of the servers Infineon energy-
saving chips regulate the power conversion?
R&D Graz
♪ ♫
♪ F&E, P Villach
R&D Linz
R&D, P Villach
R&D, P Villach
… more than half of all new automotive radar systems worldwide are
equipped with chips from Infineon?
4 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Our global R&D network
Malacca
Ipoh
Beijing
Morgan Hill
Seoul
Shanghai
Bangalore Torrance
Warstein
Duisburg
Bristol
Augsburg
Neubiberg (Munich)
Padua
Villach
Graz
Regensburg
Dresden
Bucharest
Linz
Warwick
Tewksbury
Karlsruhe
Le Puy Sainte
Réparade
Pavia
Skovlunde
El Segundo
San José
Leominster
Chandler
Singapore
Reigate
Manila
Mesa
Status: 30 September 2016
5 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Infineon Austria; Company Overview
Wien (Sales)
10 EMP
Graz (R&D)
313 EMP
Klagenfurt (IT)
161 EMP international headquarters
Villach (R&D, P, M, IT)
3.044 EMP international headquarters functions
Austrian subsidiaries DICE, Linz IT Services, Klagenfurt KAI, Villach Foreign subsidiaries Infineon Technologies Romania SCS (F&E) Infineon Technologies (Kulim) Sdn Bhd, Malaysia (P)
Linz Vienna Graz Klagenfurt Villach
Fiscal Year 2016 (per 30.09.2016)
Revenue € 1.839,5 Mio. EBIT € 158,5 Mio. Investment € 357,0 Mio. Tangible assets € 133,9 Mio. Intangible assets € 223,1 Mio.
Employees 3.625 R&D Expenditure 22 % in % of Revenue
Linz (R&D)
97 EMP
6 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Innovation Fab Villach
› Competence center for exceptionally thin (up to 40µm) silicon wafers
› Serial production of power semiconductors („Energy saving chips“) in 300-millimeter thinwafer technology
› Manufacturing competencies for MEMS (micro-electromechanical systems), e.g. silicon microphones and tire pressure sensors
› New semiconductor materials e.g. silicon carbide (SiC) and gallium nitride (GaN)
2015: Awarded the most efficient production plant in Austria
1.800 product types
35 technology families
16,3 billion chips (FY 2016)
Wafer diameters: 100, 150, 200, 300 mm
22.000 m² clean room area
7 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Semiconductor technology portfolio
Technology portfolio fits needs of logic and power applications
Digital CMOS: 800nm – 65nmTechnology Nodes (Platform <180nm incl. RF, AMS)
Analog/Mixed Signal: 500nm – 180nm Technology Nodes (CxNA)
eNVM: EEPROM: IMEMR, C9FL, OTP: C5OP (Automotive)
eFlash/EEPROM: 250nm – 65nm CxFL (Chip Card), CxFLA, CxFLN (Automotive)
HV-CMOS: 130nm, C11HV/HN
Analog Bipolar: DOPL, Ax, BIPEP, B4CD, HED
Analog BiCMOS: B6CA, B6CA-CT, B7CA, SPT170
HV-CMOS-SOI, Levelshift(SOI,JI)
Smart Power: 1200-130nm BIP/CMOS/DMOS
SPTx (Automotive, EDP) (BCD)
Smart: CMOS/DMOS, SMARTx, MSMARTx,
SSMARTx, Opto-TRIAC, SPS
Magnetic: BxCAS, C9FLRN_GMR
Opto: OP-DI, OP-TR, OP-C9N, µ-modules
C11TOF
DMOS: 12-500V Planar and Trench
MOSFET (OptiMOS™, StrongIRFET™)
HV-DMOS: Superjunction MOSFET
(CoolMOS™)
IGBT: Planar & Trench 500-6500V,
rev. cond., fast recov. diodes
SiC/GaN: Diode, JFET / power switches
Pressure: BxCSP, TIREPx
Silicon-Microphones: DSOUND
adopted for automotive, industrial and for high reliability requirements
Power/Analog incl. Green Robust
MEMS/Sensors
CMOS
RF/Bipolar
RF BiCMOS: 25GHz – 100GHz: B6HFC, B9COPT, B10C
Bipolar IC: 2GHz...200GHz RF-Bipolar: BxHF SiGe: B7HFM, B7/B9HF_SLC, B7HF200,
HiPAC: Al/Cu Integrated Passives B11HFC
P7Mxx, P7Dxx, P8Mxx RF Switches: C7NP, C11NP
Bipolar/Discretes/MMIC:
RF-Transistoren NF-TR; BxHF(D/M) SiGe: B7HFD/M, B7HF_SD
Leistungsverst.: LDMOS, LDxM, LDxIC, LD9AB RFMOS: HFM
Dioden: NF-DI, Tuner: DxT, Schottky: DxS PIN: DxP
8 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.
Comparison of a MEMS based Ion trap and „industrial“ MEMS Sensors
› Infineon is a world leading company for manufacturing of integrated MEMS products.
– Silicon Microphone, Integrated pressure sensors, Gas sensors, …
› Infineon has the competency to produce complex structures with a very high repeatability
– Semiconductor manufacturing technology from Research Institutes is nowadays far from state-of-the-art opportunities of industrial players Alliances in US
– Verification of physical effects is more reliable if the technology has industrial quality and repeatability
– Many structures which are standard at Infineon like Trench capacitors or TSV (Through Silicon Vias) are part of other quantum computing projects.
9 2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.
Intels revolutionary Finfet vs Infineon ;-)
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2012: “For the first time since the invention of
silicon transistors over 50 years ago, transistors
using a three-dimensional structure will be
put into high-volume manufacturing. Intel will
introduce a revolutionary 3-D transistor”
Infineon Transistor (~2000)
Infineon is a strong player for integration of complex
structures with deep understanding of physical
effects and field distributions
Examples for initiated projects in Quantum engineering: Master Thesis and PostDoc
› Project 1: On-chip filters for surface ion traps
– To be useful for quantum information processing, trapped ions must be very well isolated from external noise sources which could disturb their quantum state. To exclude electronic noise on the electrodes, filters must be placed very close to the trap
– ideally on the trap chip itself. This project involves the design of a suitable filter circuit, fabricating the components on the same chip as a microfabricated ion trap, and then testing the filters’ performance
› Project 2: On-chip radio-frequency electronics for surface ion traps
– The ion traps most often used for quantum information processing require radio-frequency (RF) voltages to confine the ions. Traditional resonators for generating such voltages can be tens of centimeters long, and situated tens of centimeters away from the trap. To make the system scalable the RF drive must be miniaturized to that it can be fabricated on the chip, directly next to the trap. This project involves the design of a suitable RF drive circuit, fabricating the components on the same chip as a microfabricated ion trap, and then testing the drive circuit’s performance.
› PostDoc from working on High Efficiency Wireless charging:
– Quantum Computing: “The re-fields are in the 1-300 MHz range with amplitudes of hundreds of volt”
– HF-Wireless energy transfer: R&D work on 7 MHz resonant wireless engery transfer. Publications for high frequency wireless charging are reporting high efficiencies up to 300 MHz.
11 2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.
Elementary particle strip sensor from Infineon for world largest silicon tracking detector (CERN)
12 2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.
Summary
› Many success stories of Infineon are related to complex manufacturing technologies, not to electronic IC-Design.
– Superjunction power devices, MEMS Sensors, Wide bandgap semiconductors, Smart power technologies
› The high manufacturing quality of Infineon can speed up the development of quantum computing
– Separation of physical effects and manufacturing artefacts
– Infineon sold more than 3 billion integrated sensors in the last 10 years, failure rate < 0,01 ppm
› Competencies for quantum computers and Infineon R&D projects have strong overlap
– MEMS technology and HF-power electronics
13 2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.
In the end … Villach https://www.infineon.com/cms/en/applications/consumer/multicopters/
24.03.2017 Page 14 Copyright © Infineon Technologies 2011. All rights reserved.