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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

Absolute Maximum Ratings TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FQPF7N65C / FQPF7N65CYDTU UnitVDSS Drain-Source Voltage 650 VID Drain Current - Continuous (TC = 25°C) 7 * A

- Continuous (TC = 100°C) 4.2 * AIDM Drain Current - Pulsed (Note 1) 28 * AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 212 mJIAR Avalanche Current (Note 1) 7 AEAR Repetitive Avalanche Energy (Note 1) 1.6 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 52 W

- Derate above 25°C 0.42 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300 °C

Symbol Parameter UnitRθJC Thermal Resistance, Junction-to-Case, Max. 2.4 °C/W

RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

TO-220FG SD

!!!!

!!!!

!!!!

!!!!

!!!!

!!!!

S

D

G

August 2013

FQPF7N65C N-Channel QFET® MOSFET

FeaturesThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

• 7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A• Low Gate Charge (Typ. 28 nC)• Low Crss (Typ. 12 pF)• 100% Avalanche Tested

Description

650 V, 7 A, 1.4 Ω

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

www.fairchildsemi.com

TO-220FY-formed

G

D

S

FQPF7N65C / FQPF7N65CYDTU

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 650 -- -- V∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.8 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 650 V, VGS = 0 V -- -- 1 µAVDS = 520 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 3.5 A -- 1.2 1.4 Ω

gFS Forward Transconductance VDS = 40 V, ID = 3.5 A

(Note 4)

-- 8 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 955 1245 pFCoss Output Capacitance -- 100 130 pFCrss Reverse Transfer Capacitance -- 12 16 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 325 V, ID = 7A,

RG = 25 Ω

-- 20 50 nstr Turn-On Rise Time -- 50 110 nstd(off) Turn-Off Delay Time -- 90 190 nstf Turn-Off Fall Time -- 55 120 nsQg Total Gate Charge VDS = 520 V, ID = 7A,

VGS = 10 V-- 28 36 nC

Qgs Gate-Source Charge -- 4.5 -- nCQgd Gate-Drain Charge -- 12 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 7A,

dIF / dt = 100 A/µs

(Note 4)

-- 400 -- nsQrr Reverse Recovery Charge -- 3.3 -- µC

www.fairchildsemi.com

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity

FQPF7N65C FQPF7N65CTO-220F (Y-formed)

- - 50FQPF7N65C FQPF7N65CYDTU - - 50

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

TO-220F

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100 10110-1

100

101

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V

Bottom : 5.0 V

Notes :※ 1. 250µs Pulse Test 2. TC = 25

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]2 4 6 8 10

10-1

100

101

150oC

25oC-55oC

Notes :※1. VDS = 40V2. 250µs Pulse Test

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage [V]

0 5 10 151.0

1.5

2.0

2.5

3.0

VGS = 20V

VGS = 10V

Note : T※ J = 25

RDS

(ON) [Ω

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10-1

100

101

150

Notes :※ 1. VGS = 0V 2. 250µs Pulse Test

25

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain voltage [V]

10-1 100 1010

400

800

1200

1600

2000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Note ;※ 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]0 4 8 12 16 20 24 28

0

2

4

6

8

10

12

VDS = 325V

VDS = 130V

VDS = 520V

Note : I※ D = 7A

V GS,

Gat

e-So

urce

Vol

tage

[V]

QG, Total Gate Charge [nC]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

www.fairchildsemi.com

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

Typical Characteristics (Continued)

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :※1. VGS = 0 V2. ID = 250 µA

BVDS

S, (N

orm

aliz

ed)

Dra

in-S

ourc

e Br

eakd

own

Volta

ge

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※1. VGS = 10 V2. ID = 3.5 A

RDS

(ON)

, (N

orm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tanc

e

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

www.fairchildsemi.com

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

Figure 9. Maximum Safe Operating Area

100 101 102 10310-2

10-1

100

101 10 µs

DC

10 ms

1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]25 50 75 100 125 150

0

2

4

6

8

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []

t1 , S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]

Figure 11 . Transient Thermal Response Curve

1 0 5- 1 0 -4 1 0 -3 1 0 2- 1 0 1- 1 0 0 1 0 1

1 0 2-

1 0 -1

1 0 0

※ N o tes : 1 . Z θ JC(t) = 2 .4 /W M a x . 2 . D u ty F a c to r, D = t1/t2

T 3 . T JM - C = P D M * Z θ J C(t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC

(t), T

herm

al R

espo

nse

t1

PDM

t2

Figure 10. Maximum Drain Current vs Case Temperature

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

www.fairchildsemi.com

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS dv/dt controlled by RG

ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS dv/dt controlled by RG

ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

www.fairchildsemi.com

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

www.fairchildsemi.com

Dimensions in Millimeters

Mechanical DimensionsFQ

PF7N65C

— N

-Channel Q

FET® M

OSFET

TO-220F

Figure 16. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

www.fairchildsemi.com

Mechanical Dimensions

Dimensions in Millimeters

TO-220F (Y-formed)

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

Figure 17. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Y formed lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

www.fairchildsemi.com

FQPF7N

65C —

N-C

hannel QFET

® MO

SFET

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2Cool™AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™

FPS™F-PFS™FRFET®

Global Power ResourceSM

Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver™OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost™TinyBuck™TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®

TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I64

tm

®

©2004 Fairchild Semiconductor Corporation FQPF7N65C Rev. C1

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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