MAAP-011247-000, DC-22 GHz 2W Driver2 W Psat distributed amplifier operates from 100KHz to 22 GHz and provides 12dB of linear gain.Fully matched across the band. Device can be used in Test & Measurement, EW, ECM, and Radarapplications. US ECCN EAR99.

Features• High Gain: 12 dB• PSAT: 33 dBm• Output IP3: +40 dBm• DIE and 5 mm AQFN Package• Integrated output power detector

AUX DET-O

RF O

VG1

1

5 6

8

GND

Backside Die

GND

GND

GND

2

7

9

RF IN

VG24

10

NC3

S-parameters (dB)

Functional Schematic

HMC998 Drop In

MAAP-011248-DIE, DC-22 GHz 1W Driver1 W Psat distributed amplifier operates from 100KHz to 22 GHz and provides 12.5 dB of linear gain. Fullymatched across the band. Device can be used in Test & Measurement, EW, ECM, and Radarapplications. US ECCN EAR99.

Features• High Gain: 12.5 dB• PSAT: 30 dBm• Output IP3: +40 dBm• DIE and 5 mm AQFN Package• Integrated output power detector

AUX DET-O

RF O

VG1

1

5 6

8

GND

Backside Die

GND

GND

GND

2

7

9

RF IN

VG24

10

NC3

S-parameters (dB) Psat (dBm)

Functional Schematic

HMC797 Drop In

MAAM-011206: DC-15 GHz Gain BlockE-mode Darlington gain block offers high performance across broad frequency band. Fully matched, with 15dB gain, 20dBm Pout on a +5V single bias & also features a current adjust pin. ECCN EAR99

> Features:• DC – 15 GHz Operation

• 20.5 dBm Psat

• 14 dB Gain

• 4 dB Noise Figure

• Single +5V supply

• 1.2 x 1.5 mm DFN Package

> Key Applications:• Test & Measurement

• Communication Networks

• A&D Gain Blocks

32 GHz

MAAL-011141: 100KHz-26.5 GHz Wideband LNAWideband LNA with single positive bias covering 0.01-26.5 GHz. Offers exceptional low noise figure performance over broadband frequency range. US ECCN EAR99

> Features:

• 100KHz-26.5 GHz operation

• High Gain : 17 dB

• Low Noise: 1.5 dB Typical

• Single positive bias supply

• DIE or 5 mm QFN Package

> Key Applications:

• Test and Measurement

• Wideband Receivers

MADT-011000: 5-45 GHz Wideband DetectorFully matched, wideband detector can be implemented through external directional coupler. Excellent return loss, temperature compenstated and broad dynamic range.

> Features:

• Wideband Operation

• Fully matched across band

• Broad Dynamic Range: 30 dB

• Bare Die and 3mm PQFN

> Key Applications:

• Test and Measurement

• Network Communications

• Aerospace and Defense

0.001

0.01

0.1

1

10

-20 -15 -10 -5 0 5 10 15

Vdel

ta V

Pin dBm

1846 DUT3: Vdelta V vs. Pin dBm

> 5 mV @ -15 dBm

< 2.20 V @ +15 dBm

MAOC-415000: 10-20 GHz Octave VCOOctave tuning with very low phase noise and excellent temperature stability. Fully matched with stable output power over temperature and offered in 4 mm PQFN package.

Status:

> Features:

• Octave Band Tuning

• Phase Noise: -95dBc/Hz @ 100kHz

• Excellent Temp. Stability

• +5V Bias Supply

• Lead-Free 4 mm QFN

> Key Applications:

• Test & Measurement

• Communication Networks

MAMX-0111036: 7-40 GHz Double Balanced MixerPassive, Double Balanced Mixer with wideband operation covering 7-40 GHz. High linearity performance, broad range of IF frequencies and high levels of isolation. Double-balanced (DBL BAL) passive diode mixer MMIC. Low conversion loss, high linearity and a wide IF bandwidth. The DBL BAL configuration provides excellent port isolation while internal 50-ohm matching simplifies its application. This mixer is well suited for applications such as test and measurement, microwave radio and radar. US ECCN EAR99.

> Features:

• 7-40 GHz Operation

• High Linearity with 20 dBm IIP3

• DC-10 GHz IF Bandwidth

• Die or 3 mm QFN Package

> Key Applications:

• Test & Measurement

• Network Communications

• Aerospace and Defense

MAAP-011199: 80 – 100 GHz W-Band Power AmplifierBalanced, 3-Stage high gain MMIC PA. Wideband operation for W-Band mmWave applications with 24.5 dBm output power. Export is “US De Minimis”, minimal US content.

> Features:

• Psat: 24 dBm

• High Gain: 12 dB

• Return Losses: 15 dB

• Bare Die

> Key Applications:

• mmWave Communication

• 94 GHz imaging

• Security and Sensors

MAAP-011215: 55 – 70 GHz V-Band Power AmplifierBalanced 4 stage amplifier covering 55-70 GHz with 25 dBm Psat and excellent return loss. Export Status : De minimis, minimal US content.

> Features:

• Psat: 25 dBm

• Gain >20 dB

• OIP3 > 30 dBm

• Return Losses >15 dB

• Variable gain with adjustable bias

• Integrated power detector

• Bare Die MMIC

> Key Applications:

• V-Band Communications

• Test and Measurement

• WiGiG Networks

GaN Options

17

MACOM GEN4 GaN on Si for RF EnergyPushing 2.45 GHz Efficiencies Beyond 70%

Type Number POUT(Watts)

Freq.(MHz)

Gain *1(dB)

Eff. *1(%)

Package

MAGe-100825-002 2 896-2500 19.5 73 6x3 mm PDFN-14LD

MAGe-100825-005 5 896-2500 19.5 73 6x3 mm PDFN-14LD

MAGe-100825-010 10 896-2500 19.5 73 7x7 mm PQFN-20

MAGe-100809-600 600 896-928 21 73 AC-780S-2

MAGe-100809-1K0 1000 896-928 20 72 AC-1230-S4

MACOM GEN4 GaN. All specifications at VDS = 50 V, Continuous Wave Operation, TC = 25ºC*1 @ P2dB

6x3 mm PDFN-14LD 7x7 mm PQFN-20 AC-780S-2 AC-1230S-4

915 MHz RF Energy MACOM GaN on Si Portfolio

Type Number POUT(Watts)

Freq.(MHz)

Gain *1(dB)

Eff. *1(%)

Package

MAGe-100825-002 2 896-2500 19.5 73 6x3 mm PDFN-14LD

MAGe-100825-005 5 896-2500 19.5 73 6x3 mm PDFN-14LD

MAGe-100825-010 10 896-2500 19.5 73 7x7 mm PQFN-20

MAGe-102425-015 15 2400-2500 18.5 73 7x7 mm PQFN-20

MAGe-102425-030 30 2400-2500 18.3 73 7x7 mm PQFN-20

MAGe-102425-050 50 2400-2500 17.5 72 TO-272S-2

MAGe-102425-100 100 2400-2500 17.5 72 TO-272S-2

MAGe-102425-300 300 2400-2500 16.5 70 TO-272S-4

MACOM GEN4 GaN. All specifications at VDS = 50 V, Continuous Wave Operation, TC = 25ºC*1 @ P2dB

6x3 mm PDFN-14LD

2.45 GHz RF Energy MACOM GaN on Si Portfolio

TO-272S-47x7 mm PQFN-20 TO-272S-2

MAGe-102425-050– Plastic TO-272S-2 Package– VDS = 30 V (50 V Capable)– Freq. = 2.4 – 2.5 GHz– POUT = 30 W– Power Gain = 18 dB– Drain Efficiency = 73%

MACOM GEN4 GaN on Si Pushing Efficiencies at 2.45 GHz Beyond 70%50 W 2.45 GHz RF Energy

TO-272S-2

MAGe-102425-050– VDS = 30 V– Freq. = 2.4 – 2.5 GHz– POUT = 30 W– Continuous Wave

MACOM GEN4 GaN on Si Pushing Efficiencies at 2.45 GHz Beyond 70%50 W 2.45 GHz RF Energy

TO-272S-2

MAGe-102425-300– Plastic TO-272S-4 Package– VDS = 50 V, IDQ = 200 mA– Freq. = 2.4 – 2.5G GHz– POUT > 300 W (Continuous Wave)– Power Gain = 16.5 dB (CW)– Drain Efficiency = 70% (CW)

High Efficiencies Opens New Opportunities For RF Energy300 W 2.45 GHz RF Energy

TO-272S-4

MAGe-102425-300– Plastic TO-272S-4 Package– VDS = 50 V, IDQ = 200 mA– Freq. = 2.45 GHz– Continuous Wave

High Efficiencies Opens New Opportunities For RF Energy300 W 2.4 5GHz RF Energy

TO-272S-4

MACOM GEN4 GaN on Si– All Plastic Packaging Lineup– Driver: MAGe-100825-002– Final: MAGe-102425-050– VDS=30 V (50 V Capable)– Freq. = 2.4 – 2.5 GHz– POUT > 30 W (Continuous Wave)– Power Gain = 33 dB (CW)– Drain Efficiency = 67% (CW)– Integrated FWD and REV

Power Detection– Off-Board MACOM Proprietary – Exciter and Controller

Easy To Use GEN4 GaN on Si2-Stage GEN4 GaN on Si RF Energy Module

MAGe-100825-002 MAGe-102425-050

POUT = 30 WPIN = 15 mW