PMEG2010BELDPMEG2010BELD 20 V, 1 A low VF MEGA Schottky barrier rectifier 4 August 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA)

PMEG2010BELD20 V, 1 A low VF MEGA Schottky barrier rectifier4 August 2015 Product data sheet

1. General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier withan integrated guard ring for stress protection, encapsulated in a leadless ultra smallDFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.

2. Features and benefits• Average forward current: IF(AV) ≤ 1 A• Reverse voltage: VR ≤ 20 V• Low forward voltage VF ≤ 490 mV• AEC-Q101 qualified• Ultra small and leadless SMD plastic package• Solderable side pads• Package height typ. 0.37 mm

3. Applications• Low voltage rectification• High efficiency DC-to-DC conversion• Switch mode power supply• Reverse polarity protection• Low power consumption applications• Ultra high-speed switching• LED backlight for mobile application

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C;square wave

- - 1 AIF(AV) average forwardcurrent

δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;square wave

[1] - - 1 A

VR reverse voltage Tj = 25 °C - - 20 V

VF forward voltage IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C

- 428 490 mV

IR reverse current VR = 10 V; Tj = 25 °C - 28 50 µA

© Nexperia B.V. 2017. All rights reserved

Nexperia PMEG2010BELD20 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG2010BELD All information provided in this document is subject to legal disclaimers.

Product data sheet 4 August 2015 2 / 14

Symbol Parameter Conditions Min Typ Max Unit

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;Tj = 25 °C

- 1.6 - ns

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 K cathode[1]

2 A anode

Transparenttop view

21

DFN1006D-2 (SOD882D)

sym001

1 2

[1] The marking bar indicates the cathode.

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMEG2010BELD DFN1006D-2 DFN1006D-2: leadless ultra small plastic package; 2terminals

SOD882D

7. MarkingTable 4. Marking codesType number Marking code

PMEG2010BELD 0000 1001





VENDOR CODE

MARKING CODE(EXAMPLE)

CATHODE BAR READING DIRECTION

READING DIRECTION

READING EXAMPLE:

01111011

006aac477

Fig. 1. SOD882D binary marking code description

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VR reverse voltage Tj = 25 °C - 20 V

IF forward current Tsp ≤ 130 °C - 1 A

δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C;square wave

- 1 AIF(AV) average forward current

δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;square wave

[1] - 1 A

IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 3 A

IFSM non-repetitive peak forwardcurrent

tp = 8 ms; Tj(init) = 25 °C; square wave - 6 A

[2][3] - 370 mW

[4][3] - 735 mW

Ptot total power dissipation Tamb ≤ 25 °C

[1][3] - 1135 mW

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Reflow soldering is the only recommended soldering method.[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

cathode 1 cm2.





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1][2][3] - - 340 K/W

[1][4][3] - - 170 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[1][5][3] - - 110 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

[6] - - 25 K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reversepower losses PR are a significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Reflow soldering is the only recommended soldering method.[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.[6] Soldering point of cathode tab.

006aac928

tp (s)10-3 102 10310110-2 10-1

102

103

Zth(j-a)(K/W)

10

duty cycle =1

0.750.5

0.33 0.250.2

0.1

0.020.01

0

0.05

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





006aac929

tp (s)10-3 102 10310110-2 10-1

102

103

Zth(j-a)(K/W)

10

duty cycle =1

0.750.5

0.33

0.25

0.2 0.1

0.020.01

00.05

FR4 PCB, mounting pad for cathode 1 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values006aac930

tp (s)10-3 102 10310110-2 10-1

102

103

Zth(j-a)(K/W)

10

duty cycle =1

0.750.5

0.33

0.250.20.1

0.020.01

00.05

Ceramic PCB, Al2O3, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

IF = 100 mA; pulsed; tp ≤ 300 µs;δ ≤ 0.02 ; Tj = 25 °C

- 266 310 mV

IF = 500 mA; pulsed; tp ≤ 300 µs;δ ≤ 0.02 ; Tj = 25 °C

- 353 390 mV

VF forward voltage

IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C

- 428 490 mV

VR = 10 V; Tj = 25 °C - 28 50 µAIR reverse current

VR = 20 V; Tj = 25 °C - 87 200 µA

Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 31 40 pF

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;Tj = 25 °C

- 1.6 - ns

VFRM peak forward recoveryvoltage

IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 565 - mV

006aad057

10-2

10-3

1

10-1

10IF(A)

10-4

VF (V)0 0.70.5 0.60.40.30.1 0.2

(1) (2)

(3) (4) (5)

(1) Tj = 150 °C(2) Tj = 125 °C(3) Tj = 85 °C(4) Tj = 25 °C(5) Tj = −40 °C

Fig. 5. Forward current as a function of forwardvoltage; typical values

006aac93210-1

10-2

10-3

10-4

10-5

10-6

10-7

IR(A)

10-8

VR (V)0 20155 10

(1)

(2)

(3)

(4)

(1) Tj = 125 °C(2) Tj = 85 °C(3) Tj = 25 °C(4) Tj = −40 °C

Fig. 6. Reverse current as a function of reversevoltage; typical values





VR (V)0 20155 10

006aac933

40

50

30

20

10

60

70Cd

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 7. Diode capacitance as a function of reversevoltage; typical values

006aad058

IF(AV) (A)0 1.51.00.5

0.4

0.2

0.6

0.8

PF(AV)(W)

0

(1)

(2)

(3)

(4)

Tj = 150 °C(1) δ = 0.1(2) δ = 0.2(3) δ = 0.5(4) δ = 1

Fig. 8. Average forward power dissipation as afunction of average forward current; typicalvalues

VR (V)0 20155 10

006aac935

0.4

0.8

1.2

PR(AV)(W)

0.0

(1)

(2)

(3)

(4)

Tj = 125 °C(1) δ = 1 (DC)(2) δ = 0.9; f = 20 kHz(3) δ = 0.8; f = 20 kHz(4) δ = 0.5; f = 20 kHz

Fig. 9. Average reverse power dissipation as afunction of reverse voltage; typical values

Tamb (°C)0 50 100 150 1751257525

006aad059

0.5

1.0

1.5

IF(AV)(A)

0

(1)

(2)

(3)

(4)

FR4 PCB, standard footprintTj = 150 °C(1) δ = 1(2) δ = 0.5(3) δ = 0.2(4) δ = 0.1

Fig. 10. Average forward current as a function ofambient temperature; typical values





Tamb (°C)0 50 100 150 1751257525

006aad060

0.5

1.0

1.5

IF(AV)(A)

0

(1)

(2)

(3)

(4)

FR4 PCB, mounting pad for cathode 1 cm2

Tj = 150 °C(1) δ = 1(2) δ = 0.5(3) δ = 0.2(4) δ = 0.1


Tamb (°C)0 50 100 150 1751257525

0006aad061

0.5

1.0

1.5

IF(AV)(A)

0

(1)

(2)

(3)

(4)

Ceramic PCB, Al2O3, standard footprintTj = 150 °C(1) δ = 1(2) δ = 0.5(3) δ = 0.2(4) δ = 0.1


Tsp (°C)0 50 100 150 1751257525

006aad062

0.5

1.0

1.5

IF(AV)(A)

0

(1)

(2)

(3)

(4)

Tj = 150 °C(1) δ = 1(2) δ = 0.5(3) δ = 0.2(4) δ = 0.1

Fig. 13. Average forward current as a function of solder point temperature; typical values





11. Test information

time

IF

IR

trr

IR(meas)

006aad022

Fig. 14. Reverse recovery definition

001aab912

time

time

VFRM

VF

IF

VF

Fig. 15. Forward recovery definition

tptcy

P

t006aac658

duty cycle δ =

tp

tcy

Fig. 16. Duty cycle definition

The current ratings for the typical waveforms are calculated according to the equations:IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ withIRMS defined as RMS current.





11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

12. Package outline

12-05-01Dimensions in mm

0.65

0.300.22

0.300.22

0.550.45

0.650.55

0.4max

1.050.95

2

cathode marking on top side (if applicable)

1

Fig. 17. Package outline DFN1006D-2 (SOD882D)

13. Soldering

solder lands

solder resist

solder paste

sod882d_fr

Dimensions in mm

1.40.2

0.3

0.4

1

1.3

0.8(2×)

0.6(2×)

0.7(2×)

Fig. 18. Reflow soldering footprint for DFN1006D-2 (SOD882D)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMEG2010BELD v.2 20150804 Product data sheet - PMEG2010BELD v.1

Modifications: • Section Marking: updated figure 1.

PMEG2010BELD v.1 20120418 Product data sheet - -





15. Legal information

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................611 Test information ..................................................... 911.1 Quality information ............................................. 1012 Package outline ................................................... 1013 Soldering .............................................................. 1014 Revision history ...................................................1115 Legal information .................................................1215.1 Data sheet status ............................................... 1215.2 Definitions ...........................................................1215.3 Disclaimers .........................................................1215.4 Trademarks ........................................................ 13

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 04 August 2015