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- l2O3 Si
.
2009
This thesis is part of the 03ED375 research project, implemented within the framework of the Reinforcement Programme of Human Research Manpower (PENED) and co-financed by National and Community Funds (20% from the Greek Ministry of Development-General Secretariat of Research and Technology and 80% from E.U.-European Social Fund). 03ED375 () (20% - 80% ).
: :
:
o o PENED 2003 80%
20%
,
,
.
.
, .
.
,
. :
. , ,
.
. ,
,
.
, , ,
.
. . , , , , .
,
, .
, . Huffman,
. .
.
, ,
.
, ,
,
,
.
. . .
,
.
(
) . ,
() Si.
,
() ,
. ,
, pH, ,
.
,
.
,
.
,
Si,
Si, .
, .
,
.
Cr, Ti, Si, Au, Si,
.
, SiO2 Si. ,
. , SiO2
Si
.
:
,
.
,
Si, .
Ti Cr Si Si.
Cr,
Si Si
. Si,
, , N, ...
, SiO2 .
,
.
Si SiO2. ,
SiO2
Si.
,
.
Abstract In the present thesis, the growth of porous anodic alumina films on Si substrate
was studied extensively. Potential applications of porous anodic alumina films formed
directly on Si, regarding the use of porous membranes as mask or template for various
nanostructures growth directly on Si, are discussed.
Chapter one deals with the theory and mechanisms governing porous anodic
alumina film growth, either on porous anodic films formed by anodization of
aluminum foils, or on porous anodic films developed on Si substrates. Additionally,
the effect of different factors (pH, temperature, applied voltage) on the final structural
characteristics is presented.
In chapter two, the preliminary processing steps regarding sample preparation
before the anodization procedure are quoted. Moreover, details about the experimental
set-up and the electrochemical conditions used during the sample anodization in the
current work are given.
In chapter three, the influence of three different factors, in the final structural
characteristics, is investigated. Primarily, the impact of the initial aluminum thickness
deposited on Si substrate, and secondly the confinement of the aluminum film in areas
of a few m2, in the pore size and pore density are studied. Finally, the influence of
the third factor is associated with a three-step instead of a two-step anodization, in
combination with an in-between step of aluminum chemical etching, on the ordering
and the uniformity of the pores.
The deposition of Ti and Cr nanodots arrays on Si, using the porous alumina
membrane as a masking layer, is investigated in chapter four. Furthermore, the Ti
nanodots are used for the electrodeposition of Au nanodots and nanowires inside the
porous alumina films. Additionally, the Cr dots are used as metallic nanostructured
mask for the Si etching by reactive ion etching process, that leads to the formation of
Si nanopillars on Si substrate.
In chapter five the growth of hexagonally ordered SiO2 dots on Si through
porous anodic alumina membranes, in various acidic electrolytes, is studied.
Moreover, the electrical characterization of the interface of porous alumina film/Si
and porous alumina film with SiO2 dots in pore bottoms/ Si is presented. Finally, in
the present thesis the technology of fabrication of Si nanocrystals embedded in SiO2 dots arrays through porous alumina membranes on Si substrate is developed for the
first time. This was achieved by the combination of ion beam synthesis with the
already existing technology of porous anodic alumina growth on Si substrates. The
nanocrystals are electrically isolated from the substrate. This technique is promising
as an application in non-volatile memory devices.
The main achievements accomplished through this study are summarized as
follows:
The optimization of pores ordering by developing the porous alumina membrane in two or three processing steps in combination with the chemical
etching of Al film, lying above the porous membrane, following each
anodization cycle.
The increase of pores density by the confinement of porous alumina film in areas of a few m2 on Si.
The development of Ti and Cr nanodots arrays, directly on Si, through porous alumina membranes. The use of Cr nanodots as nanostructured masking layer
for the formation of Si nanopillars, formed by etching of Si substrate with
RIE, on Si.
The density of interface stages results from the electrical characterization of porous alumina with or without SiO2 dots at each pore bottom, with the Si
substrate. The results are encouraging, keeping in mind that the pore
membranes and SiO2 dots were electrochemically grown directly on Si
substrate.
The development of distinct Si nanocrystals, embedded in SiO2 dots, combining for the first time two different technologies, that is the fabrication
of porous anodic alumina films directly on Si substrate, as well as the ion
beam synthesis technique. The proposed technique is promising for the
fabrication of non-volatile memory devices.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
. . . . . . . . . . 7
.1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
.1.1 . . . . . . . . . . . . 9
.1.2 . . . . . . . . . . . . . . . . . . . . . . . . . . 12 .1.2 . . . . . . . . . 12
.1.2
Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 .2 . . . . . . . . . . 19
.3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
.4 . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 .5 . . . . . . . . . 27 .5.1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 .6 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 .6.1 pH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 .7 . . . . . . . . . . . . . . . . . . . . . . . . . 33 .7.1 10% . . . . 34 .7.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
.8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 .8.1 Faraday . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
.9 . . . . . . . . . . . . . . . . . . . . . . 42 1.9.1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
.10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
.10.1. / Si . . . . . . . . . . . . . . . . . . 49
.11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
- - . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 .1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
.2 . . . . . . . . . . . . . . . . . . 59
.3 . . . . . . . . . . . . . . . . . . . . . 62
.4 . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
II.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 .1 . . . . . 66
.2 Al . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
.3 . . . . . . . . . . . . 84 .4 . . . . . . . . . . . . . . . . . . . 89 .5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
IV.1. Ti Cr Si . . . . . . . . . . . . 99
V.1.1 Ti Cr Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .103
V.1.2 . . . . . . . . . . . . . . . . . . . . .107
V.1.3 IV.I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
IV.2. Ti Au . . . . . . . . . . . . . . . . . . . 111 IV.3. Cr Si Si Si . . . . . . . . . . . . . . . . . . . . . 116 IV.4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
V
SiO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 V.1 Si2 Si
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
V.1.1
(AFM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
V.1.2 SiO2 . . . . . . . . . . . . . . . . . . 135
V.1.3 SiO2 Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
V.2
SiO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 V.2.1 MIS SiO2 . . 144 V.2.2 C-V, G-V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 V.2.2.a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
V.2.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 V.2.2 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
V.2.2 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
V.2.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
V.2.2
(Conductance Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .154
V.3 Si SiO2 . . . 157 V.3.1. SiO2 . . . . . . . . . . . . . . . . 159 V.3.2. Si . . . . . . . . . . . . . . . . . . . . . . 161 V.3.2 (AFM) . . . . . . . 161
V.3.2
(TEM). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
V.4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
,
. ,
Si .
, ,
.
20 ,
MOSFETs ,
, ,
... .
, .
Rayleigh,
(resolution enhancing, RET). 30nm
. ,
,
,
.
.
,
.
( ). ,
, ,
,
,
. 5
200nm, 109 - 1011 /cm2.
1
,
,
, -
- . ,
, ,
,
.
.
, , SiO2,
SiO2 Si.
.
,
,
,
,
. ,
.
,
. ,
.
,
.
,
Si.
.
,
, SiO2 .
2
. ,
,
. , ,
,
. ,
pH ,
.
,
,
.
,
, Cr Ti .
55 850nm,
25 40nm.
Cr Ti Si,
20 40nm, 15nm.
Ti
,
. Cr
Si
,
Si . ,
(
),
, ~90nm ~30 40nm.
SiO2
, Si .
,
3
.
,
. SiO2
Si
.
.
5x1011 /cm2 .
SiO2 .
,
,
, .
,
,
.
, SiO2,
Si .
SiO2,
,
.
,
Coulomb (Coulomb blockade effect),
. ,
Si, Si
SiO2
.
SiO2
4
Si. ,
Si.
,
.
, .
,
:
,
.
, p ,
.
Si,
.
,
.
SiO2 Si, .
SiO2 Si
,
. ,
SiO2
,
Si.
5
,
.
,
,
,
. ,
,
.
,
, Si.
,
(, Si,
...), ,
.
(.. ),
,
, ,
.
.
7
Si. ,
Si,
.
8
.1
.1.1
, ,
.
,
( )
(, , ).
1900
, [1].
,
, ,
,
.
,
,
.
,
[2-4].
[5-8],
, / [9-12].
[13-17], [18],
[19, 20], [21-23] [24-25].
[26-27],
9
,
10nm .
, ,
. ,
,
.
,
. ,
, ,
,
.
(.. , ,
..), ,
,
[1].
,
(, , , , ..),
,
[28]. .1.
. ()
, ()
, Al
(barrier layer) .
Barrier layer
) ) .1: ) ) .
10
(~1,4 nm/V)
[1]. ,
( .2).
) ) .2: ) ) .
.
500 700V.
,
( .2).
, ,
. -
~0.7 1m -
100m .
(0-2C)
, 60C,
,
(electropolishing) [1].
11
.
Al
.
.
.1.2
(
Si),
. (.9)
,
.
1950
,
1930.
.1.2
1953
(Scanning electron microscopy)
Structural features of oxide coatings on Aluminum [29].
, Keller, Hunter Robinson
,
, ,
.
12
(barrier layer).
,
. ,
,
Al (barrier layer),
,
.
, ,
,
.
Keller et al.
, ,
.
,
.
1957 Booker, Wood Walsh [30]
. ,
, .
1959 Hoar Mott [31],
.
Murphy Michelson
1962 [32].
, , ,
,
.
IR Dorsey [33],
13
Ginsberg Wefers (1963)
[34].
1963 Hoar Yahalom [35]
.
,
,
.
-
,
Franklin (1957) [36].
To 1968 Wood, OSullivan Vaszko [37] ,
,
, ,
(barrier layer) ( .3).
.3 . .
1970 O Sullivan Wood [38]
,
, .
14
, 1980, Treverton Davies [39],
,
,
, ,
, .
1981, Thomson Wood [40]
,
,
, , .
,
,
( .4).
.
.4:
, . . - .
1992 , Ono
Masuko , TEM EDX [41]
, ,
15
. ,
10V.
Masuda [42-45]
Fukuda [46]
. 1990 [47],
.
. ,
,
. 1995
,
[46].
1997, Masuda Ono [48],
,
.
To 1997 Masuda Asoh [49],
,
.
,
,
.
.
1997 Thompson [28]
. ,
,
,
, .
16
1998,
Muller, Jessensky Gosele [50],
, .
,
.
.
2002 Wehrspohn Gosele [51]
10%,
. ,
, (
) pH
( )
10%. .7.1. ,
Wehrspohn Gosele,
, .
2005 J. Choi [52],
, Masuda et
al. [49], -
,
,
. ,
.
, 2007 Menon [53]
.
.10.1.
17
,
.
Si (
),
Si.
, ,
.
.1.2
Si
,
,
[54-55].
1997, Gruzinsky
,
[56].
, 1999 Grouse Miller
,
[57].
2003 ,
, H. Asoh
S. Ono [58], .F. Mei [59-62], A. G. Nassiopoulou et al [63-65],
18
Si.
,
[66-67], pH [68],
.
.
,
,
.
.2
,
Keller, Hunter Robinson 1953 [29].
, , ,
.
, .
, .
,
( .5).
,
barrier layer,
.
19
) )
.5: ) ) .
Booker, Wood Walch 1957 [30].
,
. , pH
, , ,
,
.
,
.
.3
,
, ,
.
, ,
. + (
20
), -
(
, , ..,
). ,
, .
,
,
- (native oxide) -
(~15 ).
oA
oA
, /
:
(1) + + eAlAl oxides 33 )()(
, / ()
:
+ + 2 )()()(2 233
23
oxideaql OHOH (2)
,
,
,
:
(3) + ++ eOAlOAl 632 3223
(1-3)
, .
,
,
.
21
[71] , +
, ,
. , :
)(23
)()()(32 233
21
laqaqs OHAlHOAl ++ ++ (4)
.
, (4) ,
, [53]. ,
,
,
Al2O3 (H=-1675.7kJ/mol). Sullivan [38]
Thompson et al [69],
.
Al3+ (1)
(5), .
23
)()()( 233 HAlAlH aqSaq ++ ++ (5)
(1)
,
,
:
)(2)( 2333 gl HeH + + (6)
, (5)
.
(.6).
22
.6: ( ) . (1) ( ). .
,
( 3), 6 , Menon et al [53]
mol , 9
10 .
(7),
,
.
22- 2+4e- (7)
,
2- .
Zhu et al [70],
. ,
/,
. ,
(7), .
,
, (7)
2O+3Al
23
, . ,
, 100 nm
2, .
/ , ,
.
,
,
.
(
, , ).
Al3+,
/ ( )
/ [50].
, Al3+
. ,
. (2-, -)
, /,
.
. ,
,
(2) , (4) .
, ,
.
+ + eAlAl 33
+3Al2
)(oxideO
24
:
)10(
)9(
)8(
)(2
)(42)(42
)(2
)(4)(42
)(2
)(4)(4
+
+
+
++
+
aqaqaq
aqoxideaq
aqoxideaq
HOCOHC
HHPOPOH
HSOHSO
,
, .
,
. ,
,
(, , ) 2- - ,
.
,
[71]. ,
, X [72].
.4
,
( , , ).
,
(Transmission Electron Microscopy: ),
25
, ,
,
,
[40] ( .7).
[41].
.7: - - - (, ). - - (Al2O3), ( ). - , .
,
(0.05), (0.1), (0.5) ,
[40]. ,
,
,
. ,
,
,
.7,
nm/V [69].
26
, ,
, , ,
. ,
, ,
[40].
, ,
(2007) [72], X (Energy
Dispersive X-ray Analysis: EDX),
(High resolution TEM)
(IR absorption). ,
.
,
.
,
.
242OC
242OC
242OC
.5
,
(
, ),
(interpore distance Dint=d)
(Uan), . :
Dint (nm)= 1.7 2.81 and U= + (V) (11)
27
:
(interpore distance) ( .8).
K. Ebihara et al [73].
[K. Ebihara, H. Takahashi, and M. Nagayama, J. Met. Finish. Soc. Jpn. 34, 548, (1983)]
.7 : (d: interpore distance) U, , . aUd 8.27.1 +=
,
.
,
,
, ,
[74].
. Pavlovic et al [75].
.
OSullivan
1970 [38],
28
.
d Uan (V)
:
1.04 and U= (12)
O d
Uan 1.04 nmV-1.
, , 2,77nmV-1.
, 1,19 nmV-1 Hunter Fowle
(1954) [138] .
, 2,2 nmV-1
Keller (1953) [29].
OSullivan [38]
0.71, (
) :
2 0,71p c d= (13) p:
c:
d:
2,77 anc U= 1,04 and U= O Sullivan et al [38] :
1, 29 anp U= (14) ,
, .
, O Sullivan,
.
,
. , (14) ,
29
.
,
. (14)
,
1.29. Sullivan et al [38] ,
, (porosity P= 2 214
p s , s: )
. ..
.
( 214
p ) ,
.
21,3% .
[29, 138]
,
,
.
2anU
2anU
.5.1
1998 [50], [74]
, .
(lattice constant)
, .
, ,
. ,
, ,
. ,
30
,
,
. ,
, ,
. ,
, ,
.
,
,
[50], [74]. ,
,
[50].
Masuda Fukuda [46].
.6 ,
,
. , pH
,
,
, . ,
pH,
, .
,
, .
[75]. ,
,
31
. ,
,
, . ,
.
0.1 0.4 mol/l,
~2.7, . c=2.7Uan, ( c
Uan
Volts) [76]. , ,
(
,
.
. ,
.
, , 0.3,
2m,
0.6 5m [77].
,
.
,
/ .
.
,
. ,
, .
, . ,
[77].
.7
,
. ,
,
, .
-
.
33
,
,
(
). , ,
.
. ,
, ,
,
.
, .
,
, ,
/.
,
. ,
,
,
.
.7.1
10%
Wehrspohn, Gosele et al [51], 2002
[51].
.
, p/Dint
p Dint (
), Dinner/Douter (.
1.5) Dinner Douter,
34
, (
). , p/Dint
,
, :
2
int32
=
DpP (15)
10%. ,
10%,.
1.2 . , (
Dint), pH (
p), 10%
Dint, .
,
,
,
40%.
, ,
.
,
. , , ,
,
, . ,
10%. ,
( 24h),
[71].
.
10%.
pH ,
,
. ,
,
35
. ,
,
.
.7.2
Masuda [46]
,
.
, . ,
0.3
40 V,
.
, 0.3 25-27V
9h 0C. , ,
0.3 mol/l 195V 16h 0C,
~500nm ( ,
). Gosele et al [74]
1 mol/l (10%) 160V
3C. ~420nm.
,
, 1.4,
.
,
[66].
, . ,
,
. ,
36
. ,
[66]. , [78]
,
,
.
.1 ,
.
,
.
0C
, 9h,
24h.
.1
Dint
Dinner
H2SO4 27V, 0.3M
66,3 nm 24nm 7.2nm 12%
(COOH)2 40V, 0.3M
105 nm 31nm 9.1nm 8%
H3PO4 195V, 0.1M
501 nm 158,4nm 54nm 9%
.8
,
,
.
, .8.
, .
37
[T. P. Hoar and J. Yahalom, Journal of the Electrochemical Society, Vol. 110, No. 6, 614 621 (1963)]
.8: . (I, II III) .
(): .
(native oxide) Al ,
, .
/, ,
.
(): ,
.
(): ,
, .
, ( ). ,
( ,
, ).
.
/ ( .9),
.
38
.9: . , . 15%w.t DC 15V, t 25s.
I.9, .
(native oxide) ,
, .
(), :
,
.
.
,
.
.
,
,
[35]. ,
,
[138].
,
[1].
.
39
.8.1 Faraday
,
:
eldisspeliontot iiiiii ++=+= )( (15)
iion ,
, iel,
, ip
idiss .
Faraday, iion
, :
t
FzM
mmS
iAlW
Alfi
gavion
=)(
)(1)( (16)
Sg , mi mf
, (MW)Al , z
, F
Faraday t . , ip
:
t
FzM
mS
iOAlW
p
gavp =
32)(
1)( (17)
, mp Al2O3.
(15) - (17),
:
32)( OALWM
avdi )(
avpavionavd iii )()()( = (18)
40
,
.
,
.
avioni )( avpi )( avdi )(
,
,
[67]:
tot
pp
tot
ionion i
in
iin == , (19)
,
,
.
. , ,
V
, :
=d
BVAitot exp (20)
, d
.
,
,
.
, , .
,
.
41
[67] . (19).
.9
,
, 50
. , Masuda et al [42-46],
, ,
. ,
Thompson Wood [40].
, ,
,
.
,
. ,
, ,
,
[79].
( .10),
.
.
,
Al3+ ,
,
.
42
Al Al
() () ()
Al
.10:
. [28].
, ,
. , ,
, .
,
,
.
, Al O,
Al3+, ,
.
, ,
,
.
,
.
2-/-
/, Al3+
/ ( .11). ,
. ,
/
( .11).
43
.
.11:
[28].
,
.
Joule. ,
,
(19x107 kg/m2),
(21x104 kg/m2).
(~107 kg/m2),
,
Al O, , ,
. 300nm/min
0,1 nm/min
[28].
,
54%,
, .
,
44
Al3+, .
,
, (
.11),
, ,
.
,
. /
, ,
( .11).
,
. ,
( .11c, d),
[28].
,
. ,
,
. ,
,
/,
. , /
/.
.
.
. ,
,
,
45
/ .
,
/,
2-.
, ,
. ,
, .. ,
[28].
1.9.1
,
Xu et al [79],
8x106 V/cm 2x107
V/cm. , ,
/
. ,
(.. )
/ .
, , .
,
, 12-14wt% , 6-8wt%
2.4wt% [80].
.12
,
.
46
r c
.12: . (r), (r), (b) (c).
, :
=
=
bcrr
1
1
cos
cos
r: ,
r:
c: ,
b:
,
.
,
.
,
, .
,
,
.
,
,
. ,
r b
47
, ,
. ,
,
. ,
,
.
.10
,
, ,
... , ,
. , ,
, ,
. ,
Si. ,
. ,
. ,
, .
Si
( , ),
.
, ,
48
,
.
,
,
.
,
. ,
.
.10.1. / Si
,
, Si, p n ,
,
. ,
, .
,
, .
, ,
, .
.
,
. ,
,
,
( .13). ,
,
[64].
,
49
, Chu,
Wada et al 2002 [82].
Grouse Miller et al [57],
.
.13: / . Si, Si. ( )
, .
To 2007, o Lee et al [84],
FE-SEM,
X (EDAX). ,
,
, ,
( .14). Al
Si,
, Si,
. ,
. ,
,
. ,
,
.
,
. ,
50
,
.
) )
)
.14: /. () Si. () Si . () .
, ,
. ,
,
. ,
, ,
( )
( ).
,
,
.
, ,
51
.
.
, ,
. EDS
.
,
1-5nm , ,
~20nm, .
, .
( .15).
.
.15: /Si.
,
,
, .
, ,
,
.
,
, ,
. , ,
52
,
, .
,
,
/
.
Al+3 .
,
,
.
SiO2 ,
[58-65], [85]
. , TEM,
.
, , SiO2,
,
.
SiO2,
.
, .
.11
. ,
Si,
53
.
.
54
- -
Si, ~1-3cm2,
Si ( 4 25m2).
.
,
,
. ,
,
, . ,
,
.
,
.
, ,
.
55
.1.
Si.
, .
Si , p ,
1 10 .cm.
Si
Si.
, :
: , : , : . ,
.
:
Al
Al ()
56
B.
3.35nm
Al ()
SiO2 500nm, , .
SiO2 .
Si, 2x2m2 5x5m2,
SiO2.
100 250nm .
Al ()
,
.
57
:
SiO2
,
(99,99%). , ,
H2SO4:H2O2 .
BHF, (native oxide)
.
.
2-3nm ,
, .
. ,
, ,
Si.
,
RCA,
.
, BHF.
,
.
: ,
,
.
(99.99%), .
58
,
,
.
Denton.
300-500nm,
, 20 1300nm.
.2.
,
. ,
.
:
,
.
, , ,
(
PEM ).
,
.
( ),
.
, ,
.1, .
Teflon.
,
59
60
,
, .
.
( .1),
, ,
teflon .
, .
o-ring,
,
)
)
.1: ) , ) .
. (Teflon o-ring )
,
.
:
. ,
. ,
, Peltier.
,
. ,
.
, , .
,
, .
:
Keithley 230,
100V. DC
20 100V,
100mA.
:
Keithley 617,
(. .8). .3
.
, DC
,
. ,
.
.
61
Peltier.
N5770A Agilent
Technologies, 1500W.
4 - 6,
0C.
, ,
. Peltier, ,
.
.3.
.
.3 .
62
:
() (Scanning electron microscopy),
,
, .
, .
SEM FEG SEM Jeol.
() (Atomic Force Microscopy),
,
,
.
() (Transmission Electron Microscopy
).
.4.
, MS (metal
insulator semiconductor)
CV o.
.
,
, ( II.4).
.4
.
,
300-500nm. ,
, .
63
,
.
.4: MS (metal insulator semiconductor) .
II.5
.
,
, .
.
,
.
64
II
Si
.
,
,
[66].
,
.
,
, .
,
.
,
Si.
,
,
.
,
,
.
65
.1
( )
( ,
).
[46, 66, 74, 78], .1.
p ,
1-10 .cm.
, 450C 30min.
, 500nm ,
. .1
.
(Scanning Electron Microscopy).
.1
2SO4 6%w.t 20V
C2H2O4 5%w.t 40V
H3PO4 10%w.t 100V
( (, )
(. .1)
() () . ,
,
.
( ),
.10.1.
66
67
, SEM,
.
20V.
SEM (. .2),
500nm, .
,
.
.
~910nm,
~ 8,5nm. .2(1)
, .
.
.2(2) .2(3) ,
. (2)
(3)
.
SEM,
.
.1 () , () . () .
) )
500nm
68
SEM () (..2), ,
5% w.t., 20 min. ,
, . .2(1)
.2(2) , .2(3)
.
100%, ~17nm. ,
9nm,
.
3)
)
1) 2)
100nm
100nm
.2(): SEM, , Si . .
69
, 35min ,
, ,
.
.2(). (. .2(1),
.2(2)) 22 nm,
~160%.
Ebihara et al [73],
( ),
.5:
d=-1.7+2.8Uan (d nm Uan Volts).
)
100nm
100nm
100nm
1) 2)
3)
.2(): SEM .2(), 20min, . ~17nm, . .
70
54,5nm.
,
.7 .,
~50nm [73].
~47nm.
.
.
, 40V.
1-2C .
, SEM (. .3),
~850nm.
, ~22nm ( .3: (1),
100nm
.2(): SEM .2() 35 . , .
10m
500nm
1) 2)
3)
)
3)
71
(2)). 20nm.
5% w.t
20min, ,
~43%, 31,5nm,
( .3()). ,
93%, 42,5nm
( .3()).
,
~43min. 45 min,
.3 (1) (2), ,
.
~93.75nm. Ebihara et al
( .8) [73], ,
110nm ( 11 .5).
,
Ebihara et al, ,
,
. 93,75nm,
,
110nm.
III.4
500nm
, , 100V.
~1C .
,
~67 nm.
860nm ( .4()).
72
20min
5%w.t, ~38,5%,
92.8nm, .
40min, ~65%,
110nm.
240nm.
500nm
2)
100nm
1)
100nm 2)
100nm
1)
2)
3)
500nm
)
100nm
3)
2)
100nm
100nm
500nm
)
3)
500nm )
1)
)
.3: () SEM s 500nm , . , ~15 18nm. 22 30nm 2x1010 /cm2. () SEM 20min. , . 35nm. () SEM 40min. ~45nm, . (1), (2) SEM 45min. .
500 nm 500 nm
0 min 20 min
40 min
500 nm 20 min
500 nm
) )
)
1)
2)
500 nm
73
.4: () SEM 500nm . ~68nm. (), () SEM 20min 40min , . ~92nm 110nm . (1) (2), 20min, Si.
280nm [73]. ,
(p(nm)=1.29Uan(V)) OSullivan [38],
129nm.
, ,
~130nm,
. ,
OSullivan
.
0oC,
. , ,
,
.
,
, ,
.
,
,
,
. 500nm
12min. 36min,
1h.
1-2oC, ~41.6nm/min , ~13.8nm/min
~8.3nm/min .
166nm/s, 25nm/s 14nm/s .
Wood [40].
,
,
. ,
,
. ,
Wood [40], (,
) 2- OH-
. ,
,
.
5% w.t.
74
.
, 100%
20min , 35min 160%,
.
~8.5x103 nm3/min.
,
43% 20min, 40min 93%.
~17x103 nm3/min.
38%
20min , 64%
40min.
~290x103 nm3/min. ,
.
, .
, , ,
.
:
Al2O3 + 2H3PO4 2Al(PO4) + 3H2O (1)
,
. ,
.
,
(1). ,
,
.
75
,
.
,
,
,
.
,
,
, .
,
.
,
,
(. . V).
.2
,
Al
Si, ,
(. .1).
.1,
.
,
76
77
. ,
,
.
200nm, 500nm, 750nm 1000nm,
,
. , ,
5%w.t. 20
40min ( 35min),
, . ,
(SEM),
.
,
. .5 SEM,
,
20min.
. .2,
,
.
.2
2SO4 6% w.t. 20V 1-2C
(nm) : (nm): : 0min 20min 35min 200nm 380
78
.2,
SEM .5,
,
100nm 100nm
) )
100nm 100nm
500 nm
)
)
.5: SEM , , ()200nm, () 500nm () 750nm () 1m.
79
. ,
, 250nm,
11-12%. ,
.
. , ,
.
Al 500 750nm,
10-12%, Al 750 1000nm,
5.6-6%. ,
,
,
.
9h
.
Al.
,
,
10-12 1-2C. ,
,
. ,
,
, ,
.10.1 . Al Si,
,
.
.6 , SEM, ,
Al
. ,
250nm,
~7.5%.
,
80
. ,
.
,
,
.
.3.
500nm
500nm
500nm
100nm
)
500nm
)
500nm
500nm
) )
500nm
.6: SEM : () 200nm, () 500nm, () 750nm, () 1000nm.
81
.3
C2H2O4 5% w.t. 40V 1-2C
(nm) : (nm): : 0min 20min 40min 200nm 360 20 28.7 39.5
500nm 850 22 31.5 42.5 750nm 1300 23.6 34 45.7
1m 1800 25.5 36,5 49
, .
, .3,
,
,
.
,
. ,
1h 500nm 2.5h
1m.
3% . III.7
SEM,
20min.
500, 750 1000nm.
,
20min.
,
, ,
, .4.
82
H3PO4 10% w.t. 100V 1-2C
(nm)
.4
: (nm): 0min 20min 40min 500nm 860 67 92.8 110 750nm 1380 69.8 96 113
1m 1810 72 99 116
, .
500 nm
500 nm
500 nm
500 nm
)
)
500 nm
)
500 nm
500nm, ) 720min,
.7: SEM : )
50nm, ) 1000nm. 5%w.t.
83
,
,
. .8,
,
.9,
.
.9: Al , .
0 3000 6000 90000
700
1400
H2SO4 C2O2H4 H3PO4
(nm
)
(s)
.8: .
200 400 600 800 10000
700
1400
2100
H2SO4 C2O2H4 H3PO4
(nm
)
(nm)
84
,
,
,
.
.
,
( , ).
, ,
, ,
.
,
,
Si.
.
.3
,
.
, ,
Si.
SiO2, .
,
. , ,
,
.
85
SiO2, ,
.
SiO2 Si,
SiO2, 500nm.
,
,
Si, SiO2.
200nm, .
,
, .
.10
(1), (2), (1), (2).
, 2x2 m2, 3x3 m2 5x5 m2.
, SiO2
, .
,
5%w.t.
40V,
.10: (1), (2) (1), (2) .
1
) 2)
1) 2)
86
1C.
- ,
.11. ,
. ,
,
.
.12, SEM ,
SiO2
Si.
.
SEM,
: ,
.11: , , 200nm, . (, , ), , .
87
,
.
, ,
. SEM
1 m
2)
500 nm 500
300 300 nm
)
500 nm 300 nm
)
500 nm 300 nm
150 nm
.12: SEM () 2x2m2, () 3x3m2 ( SiO2), (1), (2) 5x5m2 ( ) () 5x5m2 ( SiO2)
150 nm
500 nm
)
1)
500 nm
. ,
,
,
.
.5,
,
,
.
.5
Al Si,
40V 1-2C.
: : * : (m2) (nm) (/cm2) 40-50 1010
5x5 40 2x1010
3x3 30 5x1010
2x2
89
.
~1010 /cm2
. ,
1m2,
, .. (e-beam lithography).
.
.4
( ) [47]. ,
10m (10-20m) .
, .
, , ,
,
.
,
. ,
,
,
.
,
.
.
,
.
90
,
.
1.3m.
~750 nm. ,
(
) ,
.
, . ,
,
, ,
. ,
( ).
,
,
. ,
.
Al,
. ,
( ).
.13, ,
. : (2)
, (3) , (4)
Al, (5)
(6) .
91
,
,
.
, ~750nm ,
~ 500nm.
.14.
SEM,
.
( ()), ~20nm
~400nm. H ~8x1010 /cm2.
, ( ()),
~60nm, ~660nm.
~1010 /cm2.
.13: , . ( 1) Si ( 1). (2) 750nm. (3) ( 4) Al. ( 5) . ( 6) .
92
,
.
.
. AFM,
.13,
,
, . .15()
.
~20nm, ~1m ~1011 /cm2.
.15()
. ~50nm,
~ 1m.
~1.5x1010/cm2.
100nm
100nm
()
.14: SEM , . () 6%w.t. 20V. ~20nm 8x1010/cm2. ~400nm. () 5%w.t 40V. , ~60nm, 1010 /cm2 ~660nm.
()
100nm
1m
93
. ,
,
.
. , ,
.
, ,
, .
100 nm
100nm
100nm
()
.15: SEM , . () 6%w.t. 20V. ~20nm. 1011/cm2. ~1m. () 5%w.t 40V. , ~50nm, 1.5x1010 /cm2 ~1m.
()
100nm
1m
94
.5 ,
,
, ,
.
, ,
, ( ),
. ,
,
,
.
, ,
, .
,
, .
,
1m,
,
.
,
.
(.
).
25m2,
.
4m2,
. ,
95
, .
, .
, 1x1m2,
,
,
.
.
, ,
, .
,
.
,
,
(~1.3m) Si.
V
Si
.
,
~100nm. ,
(focused ion beam (FIB) etching).
, ,
- .
.
Si. , , ,
. ,
. ,
, ,
.
Si,
Si, .
,
,
,
.
,
97
[86].
(sputtering).
,
Au [87], Ge [88], Au, Al, Zn .. [89], Al [90] Cu [91].
,
.
,
.
. ,
, .
,
,
. ,
,
.
,
.
,
.
,
, Au [92-
95], Ni [95-97], Ag, Zn [96],
[98] (AC ). ,
I-VI (CdS,
CdSe, CdTe ZnSe) [99-102]. ,
, , CoPd [103] CoFe [104] (AC
), CoPt [105-106], Fe, Co,
Ni AC [107], Cu [108].
, ,
.
C2H2,
98
( ) [109-110].
, Si
. ,
, .
, Ti, Cr Au Si,
. ,
Si
(top-down ).
IV.1. Ti Cr Si
Ti Cr .
(sputtering), ,
,
.
[92-110], Si
.
. ,
,
,
. .
99
[87].
, (
,
).
, ,
,
.
, Si,
. ,
,
, . ,
, ,
.
Ti Cr. ,
Ti Cr . IV.1
.
, , (1) (2) ,
(3), (4) (5).
(5) (2)
(1)
(4)
(3)
IV.1: .
100
200W,
4x10-6 Torr.
, .
,
.
,
27, 50, 500nm, p
1-10cm.
5%w.t. 40V.
,
20min
35min,
. ,
56, 85, 170 850nm (
27, 50, 100 500nm ), 30-
40nm ~1010/cm2. ,
,
SiO2.
5x5m2. V.2
.
, (1) (2) .
,
.
(3) , ,
(3).
Cr Ti (4)
.
55C, Si,
Cr Ti ( 5).
,
IV.2.
( 1) IV.2,
, SiO2
101
500nm, 5x5 m2 Si.
( 2)
, (
Al
), 170nm,
~30nm. 2x1010 /cm2. ,
,
Ti Cr ( 4).
IV.2: Cr Ti Si. (1) Al Si. ( 2) Al 5%w.t. 40V. ( 3), . 4 Cr Ti. ( 5) , 55oC, Cr Ti.
Si,
Cr Ti , 20 100nm (
).
55C
( 5). 4 15min,
.
102
Ti Cr , ,
.
V.1.1 Ti Cr Si
Ti Cr
,
, ,
. Ti Cr,
,
. Cr Si,
Si, Ti
Au .
. ,
20nm, .
,
,
.
500nm, . , ,
,
~100nm,
.
,
, Ti Cr,
. ,
103
27nm, 50nm, 100nm 500nm,
~56, 85, 170 850nm .
25 40nm. Ti Cr
, 20 50nm ( ).
Ti Cr . ,
,
( , ,
/ ), (
20 50nm Cr Ti).
,
. ,
~56nm, 30min,
~0.6 ( V.3). AFM IV.3
Cr, Si,
56nm / ~0.6, (1), (2)
() .
Cr
. ,
, ,
.
,
.
,
,
.
>40min,
.
104
1) 2)
)
IV.3: AFM (1), (2) 2D () 3D, Cr , 56nm / ~0.6. 5.5nm ~35nm .
~85nm
30min,
~0.4 ( IV.4). IV.4 AFM,
Ti
85nm / ~0.42.
() ()
, .
.
105
)
)
IV.4: AFM 2D () 3D () Ti 9.5nm, ~40nm 85nm ~0.42.
500nm,
850nm,
(
AFM IV.5).
0.035 0.045.
/
Ti Cr.
2-3nm.
106
)
)
V.5: AFM () 2D () 3D Ti ~2-3nm . / . ~850nm, ~ 38nm.
, IV.5 () ()
Ti Ti
850nm ~38nm.
,
(2-3nm) .
,
.
107
V.1.2
,
Ti Cr, ,
.
,
(. ). ,
,
. ,
5x5m2 .
SiO2, 100nm.
(
40V )
35min,
. ,
,
~0.2. IV.6
.
() ()
IV.6: Ti Cr. () Al Si, () . , Ti Cr .
IV.6() .
Si, ,
SiO2. ,
108
IV.6()
.
, Ti 40nm,
.
55oC, ,
Si. AFM
IV.7, ~12nm
20-40nm.
.
)
)
IV.7: AFM () 2D () 3D Ti . ~0.2, 5x5 m2 . . ~12.5nm 20 40nm.
109
(
),
12.5nm.
,
.
V.1.3 IV.I
.
/
,
. / ( 0.05),
,
.
,
(
...).
(>500nm). ,
/ 0.4 0.6.
, .
, , .
Si (. V.3). ,
110
/
, ,
.
AFM, . ,
,
.
,
.
, ,
,
. ,
, (
,
), ,
.
7-8nm,
.
,
/ .
IV.2. Ti Au
Ti Cr ,
, .
Ti
Au .
111
Ti Cr, ,
.
,
[93, 94, 111, 112].
, ,
,
.
[113],
[114]. ,
,
[115-121].
,
, , Au
.
,
,
, .
,
. ,
, ,
, .
,
.
.
(nucleation),
(),
. , ,
.
, ,
.
112
,
Ti
, .
,
Au,
Si, Ti, Si [92].
, IV.1,
Ti
.
,
500 1300nm .
5%w.t., 100V 1-2C.
5%w.t. 30min.
, 40nm
( ) Ti
. Ti,
, .
KAu(CN)2 0.1,
2.5V. .
, [Au(CN)2]-,
.
Butler-Volmer.
[Au(CN)2]- :
+ CNCNAuCNAu ad)]([)]([ 2 :
+ adoad CNAueCNAu )]([)]([ :
+ CNAuCNAu ado )]([
113
,
[122].
,
.
,
55C,
. SEM IV.8
, IV.9
, Au.
1m
V.8: SEM . 2m 80-90nm. .
SEM ( IV.8), Au
, .
,
.
, ,
114
.
( IV.9).
500nm
V.9: SEM . 800nm. , Ti ( Ti 3-4nm ). Ti, , .
,
, Au .
,
.
5%w.t. 40V,
1-2C.
38.5min
,
.
Ti, 20nm, .
115
,
IV.10.
500 nm
IV.10: SEM , Ti Si . .
SEM IV.10,
,
. ~50nm,
. 50 100nm.
IV.3. Cr Si Si Si.
Cr, Si,
, Si .
[8-10].
10nm [11]. Cr,
116
IV.1,
Si Si, .
Cr, .
,
27nm
5%w.t. 40V,
1C.
20, 24
30min 5%w.t.
40nm Cr.
4min
55C, Cr.
8nm ,
15.5nm 30min, 30 50nm.
IV.11.
IV.11, Cr
, 56
nm Si ().
. 20min ( )),
8nm 30nm, 24min ( )),
12.5nm 35-40nm 30min
( ),
14-15nm 40-45nm.
Cr,
(Reactive Ion
Etching technology RIE)
SF6/CHF3.
117
)
)
)
IV.11: AFM Cr 56nm. () 20min, ()24min () 30min Cr ( ) 40nm. Cr () ~8nm ~30nm, () 12.5nm 35-40nm () ~14-15nm ~40-45nm .
IV.13
. IV.13() Si
Cr ,
118
, IV.13() Si,
, .
) )
V.13: () () .
, SF6/CHF3
40/60, 10mTorr, 400W [127] 50s,
2000A
. ,
.
AFM V.14.
(), () () IV.14
Si
IV.11(), IV.11() IV.11() . IV.14()
~18nm, () ~ 32nm ()
92nm. AFM IV.11,
,
, Cr
. (),
( V.11), (.
V.14), 35 nm,
(~8nm) ,
,
18nm.
119
)
)
)
IV.14: AFM IV.11 (), () (), SF6/CHF3. V.14 () ~18 nm, () ~ 32nm () ~ 92nm.
, 12 nm,
( V.11),
120
, ~32nm (
V.14). ,
. , ,
Cr , 40-45nm ~15nm
( V.11).
, Si,
,
( V.14), .
,
90-100nm, ,
. ,
8nm, ,
,
,
, 2-3nm.
Cr
( ),
35nm,
7-8nm, .
Cr,
,
.
Cr,
.
,
, IV.1
.
,
. ,
, AFM. ,
Cr
121
,
. ,
.
V.4.
,
IV.2, Au
I
, . ,
Ti Cr 30 45nm
~15nm, ,
. Ti
,
,
,
. Cr,
.
.
[113],
[115-121]. , Si
[123], [124],
[125], [126] .
,
,
122
.
Ti Cr Si,
Au Si.
Si,
,
.
123
V SiO2
,
[128] [129],
... ,
N
N (NEMS).
SiO2 Si,
, .
,
,
.
SiO2 ,
Si .
Si,
,
Si. ,
, ( 1011
/cm2). ,
,
,
125
.
SiO2 2003, Ono
(2003) [130], Mei et al [59-60] Nassiopoulou et al [63-64].
, SiO2
.
, ,
25nm
.
,
[131-133]. , SiO2
,
SiO2 Si
. ,
, .
Si,
SiO2 Si.
,
.
Si SiO2
(ion beam synthesis).
Si.
V.1 Si2 Si
,
,
126
,
.
[84].
, V.1.
,
.
V.1:
.
,
.
,
,
SiO2, /.
, SiO2
( ,
). ,
.
,
(AFM), .
500nm,
p 1-10.cm.
, ,
. ,
,
.
127
, V.2
, , .
,
(), () (),
.2.8 .
, ,
, ,
.
, ( ).
V.2: . (, , ) . , .
,
SiO2, ,
,
.
, III.1
128
. , ,
(0.02
0.055mA) . ,
55C SiO2,
.
V.1.1
(AFM)
,
SiO2. AFM
V.3,
( ).
SiO2 ,
() , () ()
, Al Si.
, 0.02mA, .
, ,
10nm 55nm 70nm (
70nm ,
).
, 35nm
4nm. ,
V.3, ,
.
129
) ) )
V.3: AFM SiO2 , : ) . 52-70nm 7-12nm. ) . 23-35nm 2.5-4 nm. ) . 28nm, 2-3.5nm.
,
,
V.1 SiO2
.
V. 1
SiO2 * / SiO2 : 0.02mA 0.055mA 2SO4 6%w.t 20V 52-70nm / ~7-11nm 54nm/10-12nm C2H2O4 5%w.t 40V 23-35nm/ ~2.5-3nm 28-40nm/2.5-4nm H3PO4 10%w.t 100V ~28nm/ ~2-3nm 31nm/~3.5nm
* 0-1C.
, ,
,
130
. ,
.
.
0.02mA,
33s , 60s,
~120s.
0.055mA, ,
~60s, ~80s, ~150s
.
,
. ,
.
. ,
,
SiO2, ,
,
.
SiO2 , AFM,
,
.
, AFM.
AFM V.4,
. (), () ()
Si,
.
.
() Si
, ()
131
()
.
) )
)
V.4: AFM Si, . Si. () 20V. () 40V. () 100V.
. ,
,
, .
, ( V.4()).
,
,
, . Mei et al [134]
132
Si/
( ), ,
, SiO2.
V.4,
, SiO2
,
.
. ,
, .
, ,
,
,
. Seo et al
[84].
,
.
AFM ( V.4),
( V.3 )
)). .
,
(
). ,
, ,
.
,
(
V.1). V.5,
.
,
, .
, ,
.
133
, .
V.5:
,
SiO2 Si.
,
,
.
,
,
.
SiO2 .
.
.
, ,
. ,
. .
, ,
.
134
V.1.2 SiO2
,
,
SiO2
. ,
. ,
,
, 0.01, 0.015,
0.04 0.1mA.
V.2. ,
, 0.04
0.1mA, .
V.2
* / : 2SO4 6%w.t 20V SiO2 ~36nm/11-13nm 0.01mA
~36nm/15nm 0.015 ~42nm/12-16nm 0.04
~42-46/15nm
0.1 * 2-5oC
7 13nm, .
,
.
, ,
135
~40nm,
,
.
V.1.1 ,
, ,
70nm
.
. ,
,
SiO2 ( SiO2).
.
, ,
,
, . ,
90nm.
,
AFM, .
,
. V.1.1 ,
52nm. , V.1.2,
,
~40nm.
.
,
.
,
3-4C.
, . ,
,
2-3C.
136
,
,
.
(
).
3-4C.
, , .
AFM V.6, SiO2,
, 0.015mA 5C.
)
)
15nm
~35nm. ) V.6
AFM
(line scan),
)
V.6: AFM () 2D () 3D SiO2 , 5-6C 0.015mA. 15nm 35nm. (line scan) () Si/SiO2, Si.
)
)
137
Si. ,
, V.7.
, ,
SiO2.
V.7: , , 20V, 5-6C. 0.015mA. SiO2
0.1mA ( AFM V.8), ,
,
.
V.6. ,
V.6 (12-15nm), ~46nm.
() V.8, SiO2
.
138
) )
)
V.8: AFM () 2D () 3D, V.6. 0.1mA. ~46nm, 12-15nm. () AFM (line scan), .
,
SiO2.
, ,
.
,
,
.
V.1.3 SiO2
Si SiO2 ,
, , ,
.
139
SiO2 . o
. , , ,
, ,
.
,
SiO2.
. ,
. , , SiO2
500nm, .
,
Si2,
SiO2.
200nm,
. ,
1-2C.
,
V.9.
V.9: , SiO2, , . . 0.0023mA.
140
,
,
, .
,
Si.
.
0.0023mA.
10h,
, AFM, SiO2
, . O
, (
V.10), ~35nm 12-15nm.
,
)
)
V.10: AFM () 2D () 3D SiO2 Si. 1-2C, 20V. , ~35-38nm, 12-15nm 1011 /cm2.
141
. ,
,
.
.
,
(
, ). ,
,
, .
Si,
SiO2 Si.
142
V.2
SiO2
MIS
,
CMOS MIS. MS (Metal Insulator
Semiconductor) [135],
, Si p n,
( SiO2).
. ,
,
,
. V.11
.
Al
, ,
CMOS,
. ,
,
, ,
.
V.11: MS (metal insulator semiconductor)
143
,
.
, ,
SiO2 .
,
() p . ,
(C-V), -
(G-V) .
.
V.2.1 MIS SiO2. MIS
, Si p.
(),
,
SiO2,
V.. V.12
MIS.
() .
()
.
( 1). ()
.
,
,
SiO2 ( 2).
144
)
Al
6% , 20V.
1-2C.
27nm,
, 56nm,
10 13nm
~1011/cm2. 2, SiO2
, 30 35nm
8-10nm. V.13 AFM
. ()
() ( )
SiO2 ,
.
)
)
Al . SiO2 .
SiO2
1
2
V.12: SiO2 . () Si. ) . ) ( 2), , SiO2.
145
) )
V.13: AFM ) 20V, Si p. SiO2 . ) SiO2 . 10-13nm, 1011 /cm2. SiO2 ~35nm, 8-10nm. .
MIS ( V.11).
:
.
300nm, .
,
( lift-off). ,
1x10-4 cm2
1.6x10-3cm2,
. ,
, ,
. MIS,
( 1)
SiO2 ( 2).
146
MIS
, V.14.
V.14: . Si Si ( 1), Si, SiO2.
147
V.2.2 C-V, G-V
V.2.2a
MS [136] (C-V, G-V) ,
() ,
,
.
V.2.2
MIS.
(microprober station).
, C-V.
dQ, dV
.
,
. , ,
1MHz 1kHz,
10-25mV.
, , C=dQ/dV.
Alpha N Novocontrol technologies,
WinDeta.
C-V MIS
: (1) (accumulation), (2)
(depletion) (3) (inversion).
148
p, :
(1)
. ( )
.
.
(2)
, ,
, /.
.
, .
, ,
,
.
C-V, .
(3)
, ,
( ).
,
( ) (
).
p
n. .
.
,
149
.
, MIS, , 9x10-4cm2.
DC, 1 -4V 0.05V.
1 z 1.6 kz. ,
C-V MOS SiO2
V.2.2 1
C-V 1
V.15. : ,
.
-4 -2 0 20,0
2,0x10-11
4,0x10-11
6,0x10-11
8,0x10-11
1,0x10-10 1x106 Hz
5x105 Hz 8x103 Hz 4x104 Hz 1x105 Hz 2x105 Hz
Cp (
F)
V (Volts)
(1) (2) (3)
V.15: 1, 1.6x103 1MHz. (1) , (2) (3) . DC 1 -4V, 0.05V.
1, C-V
.
( (1)), .
150
. ,
.
( 2),
.
V.16,
, , f=2x105Hz.
(G-V)
(C-V). ,
,
MIS.
-4 -2 0 20.0
2.0x10-11
4.0x10-11
6.0x10-11
8.0x10-11
1.0x10-10 f = 2e05 Hz
V (Volts)
C (F
)
0.0
2.0x10-6
4.0x10-6
6.0x10-6
8.0x10-6
1.0x10-5
1.2x10-5
Gp (1/O
hm)
V.16: 2x105Hz. C-V. , , MIS.
V.2.2 2
2, C-V,
V.17. V.17, C-V,
MIS. DC
151
1 -3.5V 0.05V. AC
, 1.6kHz 1 Hz.
MIS,
(1) , (2) (3) .
-4 -2 0 20,0
2,0x10-11
4,0x10-11
6,0x10-11
8,0x10-11
1,0x10-10
1x106 Hz 5x105 Hz 1,6x103 Hz 8x103 Hz 4x104 Hz 1x105 Hz 2x105 Hz
Cp
(F)
V (Volts)
(1) (2) (3)
V.17: C-V 2. 1 -3.5V, 0.05V,