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Peter L.G. Ventzek, Ph.D., P.E.
Professional Experience Tokyo Electron America Inc., (Austin TX 3/2011-current) Member of Technical Staff –
Coordinate modeling and simulation activity for radial line slot antenna development and
capacitively coupled plasma source development and manage external projects with Princeton
Plasma Physics Lab, University of Texas at Austin and Osaka University.
Keio University Leading Graduate School Program - Professor (Yokohama JP 4/2012-
current)
Lam Research (Fremont CA – 8/2008-2/2011) Director – Technical (P30), New Etch
Technologies
Coordinate modeling and simulation and provide technical expertise for Lam’s plasma source
development activities focused on new etch technology. Simulation-theory lead for new chamber
technologies projects.
Ventzek Consulting Engineering TX Firm Reg-F-10418 (Austin TX 1/2008-8/2008) Principle
Consulting for software and semiconductor manufacturing. Among services rendered, counseled
customers on technical directions and market evaluations for their software products (technical
and DFM).
Tokyo Electron (TEL) US Holdings (Austin TX and Nirasaki Japan 4/2006 – 1/2008)
Manager – USTDC Simulation, Technology Development Center (TDC)
Management and technical direction of PhD level staff involved in advanced simulation of
existing and new plasma source technology for etch, thin film deposition/modification. Liaison
for global modeling and simulation activity at TEL.
Motorola Inc. Semiconductor Products Sector (SPS) [formally called Freescale
Semiconductor (FSL) from 2005] (Austin TX 11/1997-3/2006),
Manager Advanced Modeling and Simulation in Advanced Product Research and
Development Laboratory (APRDL) and Distinguished Member of Technical Staff
Management and technical direction of PhD level staff (up to 6) involved in advanced simulation
of 90-32nm technology node plasma processes, thin films (advanced materials), interconnect
stress and transistor stressor engineering, development and reliability for next generation
semiconductor manufacturing. Coordination of simulation projects with partner manufacturing
process development (including international projects), CMOS integration and advanced
materials and novel device development groups. Management of Russian Labs (10 PhD Staff)
Keio University (Yokohama, Japan 10/2004 and 11/2006),
Visiting Associate Professor, Department of Electrical Engineering
Invited Graduate Lecture Series on Semiconductor Manufacturing
Hokkaido University (Sapporo, Japan 5/1994-11/1997),
Associate Professor of Electrical Engineering
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University of Illinois at Urbana Champaign (Urbana IL 5/1992-5/1994),
Postdoctoral Research Associate in Electrical Engineering and Computer Engineering –
Optical and Discharge Physics Group (supervisor Mark J. Kushner)
The University of Michigan (Ann Arbor MI 5/1991-5/1992)
Senior Research Associate in Nuclear Engineering (supervisor Prof. Ronald Gilgenbach)
Education Ph.D. Nuclear Engineering, University of Michigan, May 1991
Supervisor: Prof Ronald Gilgenbach
Thesis: Plasma diagnostics and modeling of the dynamics of laser ablation of materials in
vacuum through atmospheric environments
Rackham Pre-Doctoral Fellow (1990)
Outstanding Achievement Award in Nuclear Eng. (1990)
M.S.E. Nuclear Engineering, University of Michigan, December 1987
Supervisor: Prof Ronald Gilgenbach
Research: He-O2 Z-Pinch plasma diagnostics
B.Sc.Eng. Chemical Engineering, University of New Brunswick, Canada, May 1986
Research: Secondary-side power plant cooling water phosphate-based process control
St Anne-Nackawic Scholarship Recipient
Canadian National Science and Engineering Research Council (NSERC) Fellowship
Award (declined in order to attend U. Michigan)
Licensure Professional Engineer (State of Texas)
Committees and Service Gaseous Electronics Conference: Local Organizing Committee (2012), Past-Chairman
(2009), Chairman, (2007-8), Chairman-Elect (2006), Executive Committee (1999-2001)
Chairman Plasma Science and Technology Division of AVS (2006)
Dry Process Symposium, Program Committee, (1998-2008), International Advisory Board
(1998-2000)
Program Committee (Etch)- International Microprocesses and Nanotechnology Conference,
Program Committee (2004-5)
ITRS (International Technology Roadmap for Semiconductors) co-author of 2003 (and 2006
update) modeling and simulation chapter.
Semiconductor Research Corporation BEOL TAB Representative for Freescale (2000-2006)
American Vacuum Society, Executive Committee of the Plasma Science and Technology
Division (1999-2002)
University of Michigan Department of Nuclear Engineering and Rad. Science Industrial
Advisory Board (1998-2003)
Motorola-Freescale Diversity Committees (numerous activities including core team for
development of business unit wide mentoring program.
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Court Appointed Special Advocates (CASA) of Travis County Diversity Committee (2005-6)
Awards 2006 NOGLSTP Engineer of the Year Award
1993 Semiconductor Research Corporation Technical Excellence Award (with Mark
Kushner, Rob Hoekstra and Seung Choi)
Consultant Activity Los Alamos National Laboratory X-Division: Contact: R. Faehl - assessment of projects
related to laser ablation processes and simulation (1994-95)
Publications & Patents: 17 issued US patents and 60 refereed journal
publications.
Patents Issued US 8,409,459 Hollow cathode device and method for using the device to control the
uniformity of a plasma process
US 7,772,584 Laterally grown nanotubes and method of formation
US 7,763,551 RLSA CVD deposition control using halogen gas
US 7,751,177 Thin film capacitor with a field modification layer
US 7,642,193 Method of treating a mask layer prior to performing an etching process
US 7,592,248 Method of forming semiconductor device having nanotube structures
US 7,579,282 Method for removing a metal foot during high-k diel. metal gate etch
US 7,572,386 Method of treating a mask layer prior to performing an etching process
US 7,534,693 Thin-film capacitor with a field modification layer
US 7,449,414 Method of treating a mask layer prior to performing an etching process
US 7,371,677 Laterally grown nanotubes and method of formation
US 7,335,602 Charge-free layer by layer etching of dielectrics
US 7,279,433 Deposition and patterning of boron nitride nanotube ILD
US 6,969,568 Method for etching a quartz layer in a photoresistless semiconductor mask
TW 504756 Post-deposition sputtering
US 6,500,315 Method and apparatus for forming a layer on a substrate
US 6,165,567 Process of forming a semiconductor device
US 6,139,696 Method and apparatus for forming a layer on a substrate
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Publications & Significant Presentations
Book Chapters
1. “Plasma etching”, P.L.G. Ventzek, S. Rauf, T. Sparks, in CRC Handbook of Semiconductor
Manufacturing Technology 2nd
Edition, R. Doering and Y. Nishii, editors. CRC Press p. 16-1
(2007)
Recent Refereed Publications 1. Computational Modeling Study of the Radial Line Slot Antenna Plasma Source, L.
Raja, S. Mahadevan, P.L.G. Ventzek and J. Yoshikawa, J. Vac. Sci. Technol. A Volume 31
Issue 3, p. 031304 (2013)
2. Impact of Static Magnetic Fields on the Radial Line Slot Antenna Plasma Source, J.
Yoshikawa and P.L.G. Ventzek, J. Vac. Sci. Technol. A Volume 31 Issue 3, p. 031306 (2013)
3. Test particle simulation of the role of ballistic electrons in hybrid dc/rf capacitively
coupled CF4 plasmas, P.L.G. Ventzek & K. Denpoh J. Vac. Sci. Technol. A Volume 27, Issue
2, pp. 287-294 (2009)
4. Test particle simulation of the role of ballistic electrons in hybrid dc/rf capacitively
coupled plasmas in argon, K. Denpoh and P.L.G. Ventzek, J. Vac. Sci. Technol. A Volume 26,
Issue 6, pp. 1415-1424 (2008)
5. Plasma Chemistry of Octafluorocyclopentene/Argon/Oxygen Mixtures, S.-Y. Kang, I.
Sawada, M. Kawakami, S. Segawa, P.L.G. Ventzek, Japanese Journal of Applied Physics 47 pp.
6843-6848 (2008)
6. A molecular dynamics model for the interaction of energetic ions with SiOCH low-
dielectric, V. V. Smirnov, A. V. Stengach, K. G. Gaynullin, V. A. Pavlovsky, S. Rauf, and P. L.
G. Ventzek, Journal of Applied Physics, vol. 101, p. 053307 (2007)
7. A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of
silicon and SiO2, S. Rauf, T. Sparks, P. L. G. Ventzek, V. V. Smirnov, A. V. Stengach, K. G.
Gaynullin, and V. A. Pavlovsky, Journal of Applied Physics vol. 101, p. 033308 (2007)
8. Modeling HfO2 atomic layer chemical vapor deposition on blanket wafer, via, and
trench structures using HfCl4/H2O, Phillip J. Stout, Vance Adams, and Peter L. G. Ventzek,
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) vol.
24, 2372 (2006)
9. Tantalum carbide etch characterization in inductively coupled Ar/Cl2/HBr plasmas, H.
Kawai, S. Rauf, E. Luckowski, and P. L. G. Ventzek, J. Vac. Sci. Technol. A 24, 1764 (2006)
10. Computational modeling of process induced damage during plasma clean, S. Rauf, A.
Haggag, M. Moosa, and P. L. G. Ventzek, Journal of Applied Physics vol. 100, p. 023302 (2006)
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11. Gate etch process model for static random access memory bit cell and FinFET
construction, Phillip J. Stout, Shahid Rauf, Richard D. Peters, and Peter L. G. Ventzek, Journal
of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) vol. 24, 1810
(2006)
12. Modeling dual inlaid feature construction, Phillip J. Stout, Shahid Rauf, Andrew Nagy,
and Peter L. G. Ventzek, Journal of Vacuum Science & Technology B (Microelectronics and
Nanometer Structures) vol. 24, p. 1344 (2006)
13. Computer simulation accelerates equipment and process design, Shahid Rauf. Lawrence
Gochburg, Peter Ventzek and E. Jack McInerney, Semiconductor International, vol. 12 p. 24
(November 2005)
14. Multi-scale modeling of plasma etching: current status and prospects, P.L.G. Venztek,
Oyo Butsuri, 74, No.08 (2005).
15. Low target power wafer sputtering regime identified during magnetron tantalum
barrier physical vapor deposition, Phillip J. Stout, Dean J. Denning, Lynne M. Michaelson,
Sandeep Bagchi, Da Zhang, and Peter L. G. Ventzek, Journal of Applied Physics vol. 98, p.
024904 (2005)
16. Model for nitridation of nanoscale SiO2 thin films in pulsed inductively coupled N2
plasma, Shahid Rauf, Sangwoo Lim, and Peter L. G. Ventzek, Journal of Applied Physics vol.
98, p. 024305 (2005)
17. Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 II.
CFx+ (x=1, 2, 3) ion etch characterization, Smirnov, V.V.; Stengach, A.V.; Gaynullin, K.G.;
Pavlovsky, V.A.; Rauf, S.; Stout, P.; Ventzek, P.L.G. Source, Journal of Applied Physics vol.97,
no.9 p.93303-1-10 1 May 2005
18. Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 I.
Basic model and CF2+ ion etch characterization, Smirnov, V.V.; Stengach, A.V.; Gaynullin,
K.G.; Pavlovsky, V.A.; Rauf, S.; Stout, P.J.; Ventzek, P.L.G., Journal of Applied Physics vol.97,
no.9 p.93302-1-11 1 May 2005
19. Modeling high power magnetron copper seed deposition: Effect of feature geometry on
coverage, Stout, P.J.; Da Zhang; Ventzek, P.L.G., Journal of Vacuum Science & Technology A
(Vacuum, Surfaces, and Films) vol.21, no.3 p.596-606 May 2003
20. Integrated equipment-feature modeling investigation of fluorocarbon plasma etching of
SiO2 and photoresist, Zhang D.; Rauf, S.; Sparks, T.G.; Ventzek, P.L.G., Journal of Vacuum
Science & Technology B (Microelectronics and Nanometer Structures) vol.21, no.2 p.828-36
March 2003
21. Plasma and process characterization of high power magnetron physical vapor
deposition with integrated plasma equipment-feature profile model, Zhang D.; Stout, P.J.;
Ventzek, P.L.G., Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films)
vol.21, no.1 p.265-73 Jan. 2003
22. Thermal modeling of extreme ultraviolet and step and flash imprint lithography
substrates during dry etch, Weisbrod, E.J.; Dauksher, W.J.; Zhang, D.; Rauf, S.; Mangat,
P.J.S.; Ventzek, P.L.G.; Smith, K.H.; Clemens, S.B.; Martin, C.J.; Engelstad, R.L., Journal of
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Vacuum Science & Technology B (Microelectronics and Nanometer Structures) vol.20, no.6
p.3047-52 Nov. 2002
23. Comparing ionized physical vapor deposition and high power magnetron copper seed
deposition, Stout, P.J.; Zhang, D.; Rauf, S.; Ventzek, P.L.G., Journal of Vacuum Science &
Technology B (Microelectronics and Nanometer Structures) vol.20, no.6 p.2421-32 Nov. 2002
24. Charged species dynamics in an inductively coupled Ar/SF 6 plasma discharge, Rauf, S.;
Ventzek, P.L.G.; Abraham, I.C.; Hebner, G.A.; Woodworth, J.R., Journal of Applied Physics
vol.92, no.12 p.6998-7007 15 Dec. 2002
25. Fundamental atomic plasma chemistry for semiconductor manufacturing process
analysis (invited review), Ventzek, P.L.G.; Kudrya, V.; Astapenko, V.; Eletskii, A.; Zhang, D.;
Stout, P.J.; Rauf, S.; Orlowski, M., AIP Conference Proceedings no.635 p.3-14 2002
26. Modeling and experimental data using a new high rate ICP tool for dry etching 200 mm
EPL masks, Dauksher, W.J.; Clemens, S.B.; Resnick, D.J.; Smith, K.H.; Mangat, P.J.S.; Rauf,
S.; Stout, P.; Ventzek, P.L.G.; Ashraf, H.; Lea, L.; Hall, S.; Hopkins, J.; Chambers, A.,
Microelectronic Engineering vol.61-62 p.887-94 July 2002
27. Application and simulation of low temperature plasma processes in semiconductor
manufacturing, Ventzek, P.L.G.; Rauf, S.; Stout, P.J.; Zhang, D.; Dauksher, W.J., Hall, E.,
Applied Surface Science, vol. 192, p.201-215, May 2002. – also published as a chapter in a
conference proceeding published by Elsevier.
28. Model for an inductively coupled c-C4F8/Ar plasma discharge, Rauf, S.; Ventzek, P.L.G.
Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) vol.20, no.1 p.14-23
Jan. 2002
29. Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks, Dauksher,
W.J.; Clemens, S.B., Resnick, D.J., Smith, K.H., Mangat, P.J.S., Rauf, S., Ventzek, P.L.G.,
Arunachalam, V., Ramamurthi, B.N., Ashraf, H., Lea, L., Hall, S., Johnston, I.R., Hopkins, J.,
Bhardwaj, J.K., Microelectronic Engineering vol.57-58 p.607-12 Sept. 2001
30. Integrated multi-scale model for ionized plasma physical vapor deposition,
Arunachalam, V.; Rauf, S.; Coronell, D.G.; Ventzek, P.L.G., Journal of Applied Physics vol.90,
no.1 p.64-73 1 July 2001
31. Ionized physical vapor deposition of Cu using a mixture of rare gases, Rauf, S.; Ventzek,
P.L.G., Journal of Applied Physics vol.89, no.5 p.2535-8 1 March 2001
32. Ionized physical vapor deposition of Cu on 300 mm wafers: A modeling study, Rauf, S.;
Ventzek, P.L.G.; Arunachalam, V., Journal of Applied Physics vol.89, no.5 p.2525-34 1 March
2001
33. Calculation of the cross sections for electron impact excitation of magnesium,
Astapenko, V.A.; Eletskii, A.V.; Kudrya, V.P.; Ventzek, P., Laser Physics vol.10, no.6 p.1220-6
Nov.-Dec. 2000
34. Electron-phonon dynamics in metals on ultrashort timescales, Wright, O.B.; Ventzek,
P.L.G.; Gusev, V.E., Physica B vol.263-264 p.193-5 March 1999
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35. Monte Carlo simulation study of the scaling of electron transport parameters in crossed
dc electric and magnetic fields, Nakamura, S.; Ventzek, P.L.G.; Kitamori, K., Journal of
Applied Physics vol.85, no.5 p.2534-9 1 March 1999
36. A Boltzmann equation analysis of electron swarm parameters and properties of excited
particle number densities in Xe/Ne plasmas-laser absorption effect, Uchida, S.; Sugawara,
H.; Ventzek, P.L.G.; Sakai, Y., Transactions of the Institute of Electrical Engineers of Japan,
Part A vol.118-A, no.6 p.622-8 June 1998
37. Simulations of step responses of electronegative radio-frequency capacitively coupled
discharges, Yang, J., Ventzek, P.L.G., Sakai, Y., Date, H., Kitamori, K., Tagashira, H.,
Meyyappan, M., Journal of Applied Physics, vol. 84, no. 4, p. 1848-58, 15 August 1998
38. Measurements of the drift velocity of electrons in mixtures of nitrogen and carbon
dioxide from 100 to 1000 Td, Hasegawa, H.; Date, H.; Ohmori, Y.; Ventzek, P.L.G.;
Shimozuma, M.; Tagashira, H., Journal of Physics D (Applied Physics) vol.31, no.6 p.737-41 21
March 1998
39. Spatial characteristics of electron swarm parameters in gases, Date, H.; Ventzek, P.L.G.;
Kondo, K.; Hasegawa, H.; Shimozuma, M.; Tagashira, H., Journal of Applied Physics vol.83,
no.8 p.4024-9 15 April 1998
40. Step responses of radio-frequency capacitively coupled discharges, Jing Yang; Ventzek,
P.L.G.; Sugawara, H.; Sakai, Y.; Kitamori, K.; Tagashira, H., Journal of Applied Physics vol.82,
no.5 p.2093-105 1 Sept. 1997
41. A method for identifying sources of reactive ion etch lag and loading in a magnetically
enhanced reactive ion etcher, Buie, M.J.; Pender, T.P.; Ventzek, P.L.G., Japanese Journal of
Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers) vol.36, no.7B, p.4838-
44 July 1997
42. Model for a large area multi-frequency multiplanar coil inductively coupled plasma
source, Yamada, N.; Ventzek, P.L.G.; Date, H.; Sakai, Y.; Tagashira, H., Journal of Vacuum
Science & Technology A (Vacuum, Surfaces, and Films) vol.14, no.5 p.2859-70 Sept.-Oct. 1996
43. A two-dimensional model of laser ablation of frozen Cl2: a possible neutral beam source
for etching applications, Ventzek, P.L.G.; Suzuki, M.; Date, H.; Sakai, Y.; Tagashira, H.;
Kitamori, K., Journal of Applied Physics vol.80, no.2 p.1146-55 15 July 1996
44. Electron swarm parameters in ramp electric fields, Date, H.; Ventzek, P.L.G.;
Shimozuma, M.; Tagashira, H., Journal of Applied Physics vol.79, no.6 p.2902-8 15 March 1996
45. Abel`s inversion applied to experimental spectroscopic data with off axis peaks, Buie,
M.J.; Pender, J.T.P.; Holloway, J.P.; Vincent, T.; Ventzek, P.L.G.; Brake, M.L., Journal of
Quantitative Spectroscopy and Radiative Transfer vol.55, no.2 p.231-43 Feb. 1996
46. Simulations of real-time two-coil control of an inductively coupled plasma for etching
applications, Yamada, N.; Ventzek, P.L.G.; Sakai, Y.; Tagashira, H.; Kitamori, K.; Proceedings
of the Symposium on Process Control, Diagnostics, and Modeling in Semiconductor
Manufacturing, p.575-87 1995
47. Renovations to a plasma teaching laboratory, Brake, M.L.; Lee, M.; Ventzek, P.; Passow,
M.; Pender, J., International Journal of Engineering Education vol.11, no.4-5 p.350-7 1995
8
48. Simulations of real-time control of two-dimensional features in inductively coupled
plasma sources for etching applications Ventzek, P.L.G.; Yamada, A.N.; Sakai, Y.; Tagashira,
H.; Kitamori, K., Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films)
vol.13, no.5 p.2456-63 Sept.-Oct. 1995
49. Investigation of electron source and ion flux uniformity in high plasma density
inductively coupled etching tools using two-dimensional modeling, Ventzek, P.L.G.;
Grapperhaus, M.; Kushner, M.J., Journal of Vacuum Science & Technology B (Microelectronics
and Nanometer Structures) vol.12, no.6 p.3118-37 Nov.-Dec. 1994
50. Spatial distributions of dust particles in plasmas generated by capacitively coupled
radiofrequency discharges, Choi, S.J.; Ventzek, P.L.G.; Hoekstra, R.J.; Kushner, M.J., Plasma
Sources, Science and Technology vol.3, no.3 p.418-25 Aug. 1994
51. Higher-order sampling strategies in Monte Carlo simulations of electron energy
distribution functions in plasmas, Ventzek, P.L.G.; Kitamori, K., Journal of Applied Physics
vol.75, no.8 p.3785-8 15 April 1994
52. Two-dimensional modeling of high plasma density inductively coupled sources for
materials processing, Ventzek, P.L.G.; Hoekstra, R.J.; Kushner, M.J., Journal of Vacuum
Science & Technology B (Microelectronics and Nanometer Structures) vol.12, no.1 p.461-77,
Jan.-Feb. 1994
53. Two-dimensional hybrid model of inductively coupled plasma sources for etching,
Ventzek, P.L.G.; Sommerer, T.J.; Hoekstra, R.J.; Kushner, M.J., Applied Physics Letters vol.63,
no.5 p.605-7 2 Aug. 1993
54. Copper vapor laser machining of polyimide and polymethylmethacrylate in
atmospheric pressure air, Ventzek, P.L.G.; Gilgenbach, R.M.; Ching, C.H.; Lindley, R.A.;
McColl, W.B., Journal of Applied Physics vol.72, no.7 p.3080-3 1 Oct. 1992
55. Schlieren and dye laser resonance absorption photographic investigations of KrF
excimer laser-ablated atoms and molecules from polyimide, polyethyleneterephthalate, and
aluminum, Ventzek, P.L.G.; Gilgenbach, R.M.; Chi Hong Ching; Lindley, R.A., Journal of
Applied Physics vol.72, no.5 p.1696-706 1 Sept. 1992
56. Deflection of carbon dioxide laser and helium-neon laser beams in a long-pulse
relativistic electron beam diode, Bosch, R.A.; Ching, H.; Gilgenbach, R.M.; Ventzek, P.L.G.;
Menge, P.R.; Choi, J.J.; Spencer, T.A., Review of Scientific Instruments vol.62, no.7 p.1776-82
July 1991
57. Laser-beam deflection measurements and modeling of pulsed laser ablation rate and
near-surface plume densities in vacuum, Ventzek, P.L.G.; Gilgenbach, R.M.; Heffelfinger,
D.M.; Sell, J.A., Journal of Applied Physics vol.70, no.2 p.587-93 15 July 1991
58. Renovations to a plasma teaching laboratory, Brake, M.L.; Lee, M.; Ventzek, P.; Passow,
M., Transactions of the American Nuclear Society vol.63 p.24-5 1991
59. Dynamics of excimer laser-ablated aluminum neutral atom plume measured by dye
laser resonance absorption photography, Gilgenbach, R.M.; Ventzek, P.L.G., Applied Physics
Letters vol.58, no.15 p.1597-9 15 April 1991
9
60. Photoacoustic and photothermal beam deflection as a probe of laser ablation of
materials, Sell, J.A.; Heffelfinger, D.M.; Ventzek, P.L.G.; Gilgenbach, R.M., Journal of Applied
Physics vol.69, no.3 p.1330-6 1 Feb. 1991
61. Schlieren measurements of the hydrodynamics of excimer laser ablation of polymers in
atmospheric pressure gas, Ventzek, P.L.G.; Gilgenbach, R.M.; Sell, J.A.; Heffelfinger, D.M.,
Journal of Applied Physics vol.68, no.3 p.965-8 1 Aug. 1990
62. Laser beam deflection as a probe of laser ablation of materials, Sell, J.A.; Heffelfinger,
D.M.; Ventzek, P.; Gilgenbach, R.M., Applied Physics Letters vol.55, no.23 p.2435-7 4 Dec.
1989
Recent Presentations
1. “Beam Plasma Interactions in Plasma Processing”, Beam Plasma Workshop, Thredbo
Australia, June 7, 2013
2. “Simulations of Plasma Sources for Semiconductor Device Manufacturing,” Fluids
Seminar, University of Texas at Austin Department of Aerospace and Engineering
Mechanics, April 4, 2013
3. “Multi-Peaked and Stepped Electron Velocity Distributions in RF-DC Discharges with
Secondary Emission” Gaseous Electronics Conference, Austin TX 10/2012
4. “Excitation of Ion Acoustic Waves by Electron Beams” Gaseous Electronics Conference,
Austin TX 10/2012
5. “Simulations of the Radial Line Slot Antenna Plasma Source” American Vacuum Society
Symposium, Tampa FL 11/2012
6. “Multi-Peaked and Stepped Electron Velocity Distributions in RF-DC Discharges with
Secondary Emission” American Vacuum Society Symposium, Tampa FL 11/2012
7. “Excitation of Ion Acoustic Waves by Electron Beams” American Vacuum Society
Symposium, Tampa FL 11/2012
8. “Simulations of Radial Line Slot Antenna Sources with Magnetic Fields”, Gaseous
Electronics Conference, Salt Lake City UT 11/2011
9. “Benchmark Simulations of Radial Line Slot Antenna Sources”, American Vacuum
Society Symposium, Nashville TN 10/2011
Invited Lectures (from 1998)
10. “Simulations of Plasma Sources for Semiconductor Device Manufacturing,” Gaseous
Electronics Conference, Austin TX 10/2012
10
11. “Electron Energy Distribution Function Control – An Industrial Perspective”, Gaseous
Electronics Conference, Salt Lake City UT 11/2011
12. “Modeling and simulation in semiconductor manufacturing”, Asia Pacific Conference
on Plasma Science and Technology, Jeju Korea, 7/2010
13. “Modeling and simulation in semiconductor manufacturing”, Colloquium of Plasma
Quebec, Montreal Canada, 6/2010
14. “Plasma simulation in semiconductor equipment manufacturing,” Oyo Butsuri Gakkai –
Japanese Applied Physics Society, Sapporo Japan, 9/12/2007
15. “Plasma process simulation; status and opportunities,” Semicon Korea 2007, Seoul
Korea, 2/1/2007
16. “Modeling and data needs for plasma processing in semiconductor manufacturing,”
International Conference on Atomic and Molecular Data (ICAMDATA05), Meudon France,
10/16/2006
17. “Plasma Process Simulation: Process Integration and Control”, Semicon Japan 2005,
Makuhare Messe, Tokyo Japan, 12/2005
18. “Semiconductor manufacturing,” Invited lectures at Keio University Department of
Electrical Engineering, Yokohama Japan, 11/2005
19. “Plasma science in semiconductor manufacturing,” TSAPS/AAPT/SPS Joint Fall Meeting
Houston, TX 10/21/2005
20. “Fundamental data for semiconductor manufacturing unit process modeling and
simulation: generation, application and current needs,” 36th Meeting of the Division of
Atomic, Molecular and Optical Physics Tuesday–Saturday, Lincoln, NE 5/19/2005
21. “Plasma Process Simulation: Process Integration and Control”, Invited Lecture at Tokyo
Electron Technology Development Center, Nirasaki Japan, 3/2005
22. “Semiconductor Equipment and process design: current status and future prospects,” University of Texas at Austin Physics Colloquium Series, Austin TX, 12/2004
23. “Semiconductor manufacturing,” Invited lectures at Keio University Department of
Electrical Engineering, Yokohama Japan, 10/2004
24. “Equipment and process design: current status and future prospects,” International
Workshop on Optical and Device Technology, Leuven Belgium, 9/2004
25. “Plasma processing in the semiconductor industry,” Rose-Hulman Institute of
Technology (RHIT) Chemical Engineering Colloquium, 1/2004
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26. “Semiconductor manufacturing lecture series,” Muroran Institute of Technology,
Muroran Japan, 3/2003
27. “Integration of modeling and simulation into process development,” Northern California
AVS Section, Joint Plasma Etch Users Group and Thin Films Users Group Meeting, San Jose
CA 12/2003.
28. “Plasma process simulation for semiconductor manufacturing applications”, University
of Texas at Austin Physics Colloquium Series, Austin TX, 10/2002
29. “Plasma process simulation for semiconductor manufacturing,” Nano and Giga
Manufacturing Symposium, Moscow Russia 9/2002
30. “Integrated approach to plasma process simulation for semiconductor manufacturing,” Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS2002, and 11th
KAPRA, Cheju Korea, 7/2002
31. “Fundamental atomic plasma chemistry for semiconductor manufacturing process
analysis,” 13th APS Topical Conference on Atomic Processes in Plasmas, Gatlinburg TN
4/22/2002
32. “Integrated plasma equipment - feature evolution models for thin film etching
applications,” 9th International Symposium on Gaseous Dielectrics Ellicott City, MD
5/21/2001
33. “Applications and simulation of low temperature plasma processes in semiconductor
manufacturing,” International Workshop on Basis for Low Temperature Plasma
Applications, Hakone Japan, 7/2001
34. “Integration & application of physically-based models to identify process engineering
solutions for ionized PVD,” Materials Research Society - Advances in Thin Film
Simulations and Experimental Verification, San Jose CA, 6/23/1999
Conference Proceedings 1. A C5F8 Plasma Chemistry Dataset, Song Yun Kang, Peter Ventzek, Ikuo Sawada, Masato
Kawakami, Sumie Segawa, 2007 Proceeding of the Dry Process Symposium
2. Evaluation of Damage From E-Beam Cured Low- Material On SOI Substrates Michelle Rasco, Shahid Rauf, Pak Leung, Ritwik Chatterjee, Kurt Junker, Michael Turner,
Paul Grudowski, Mohamad Mossa, Peter Ventzek, 2005 Proceedings of the Advanced
Metallization Conference
3. Integration challenges of 0.1 mu m CMOS Cu/low-k interconnects, Yu, K.C.; Werking,
J.; Prindle, C.; Kiene, M.; Ng, M.-F.; Wilson, B.; Singhal, A.; Stephens, T.; Huang, F.;
Sparks, T.; Aminpur, M.; Linville, J.; Denning, D.; Brennan, B.; Shahvandi, I.; Wang, C.;
12
Flake, J.; Chowdhury, R.; Svedberg, L.; Solomentsev, Y.; Proceedings of the IEEE 2002
International Interconnect Technology Conference (IITC) (Cat. No.02EX519) p.9-11 2002
4. Loading and scale-up of plasma etching reactors with more complex chemistries, Buie,
M.J.; Pender, J.T.P.; Ventzek, P.L.G.; Proceedings of the Second International Symposium
on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing p.317-24
1997
5. Simulations of plasma etch process control on etching time scales: Multi-coil control of
an inductively coupled plasma source, Yang, J.; Yamada, N.; Ventzek, P.L.G.; Sakai, Y.;
Date, H.; Tagashira, H.; Kitamori, K.; Proceedings of the Second International Symposium
on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing p.233-44
1997
6. Modeling of LF barrier discharges in a Xe excimer lamp, Oda, A.; Sakai, Y.; Sugawara,
H.; Ventzek, XXIII International Conference on Phenomena in Ionized Gases, ICPIG
Proceedings, p.74-5 vol.5 1997
7. RF atmospheric pressure glow discharges for materials processing, Miyashita, T.; Sakai,
K.; Ventzek, P.L.G.; Sakai, Y.; Tagashira, H.; Proceedings of the Eleventh International
Symposium on Plasma Processing p.137-47 1996
8. A large area multi-frequency multi-planar coil inductively coupled plasma source,
Yamada, N.; Ventzek, P.L.G.; Date, H.; Sakai, Y.; Tagashira, H.; Proceedings of the
Eleventh International Symposium on Plasma Processing p.126-36 1996
9. Species-resolved laser probing investigations of the hydrodynamics of KrF excimer and
copper vapor laser-ablation processing of materials, Ventzek, P.L.G.; Gilgenbach, R.M.;
Chi Hong Ching; Lindley, R.A.; Lash, J.S., Proceedings of the SPIE - The International
Society for Optical Engineering vol.1856 p.82-91 1993
10. Laser beam deflection as a probe of laser ablation of materials, Sell, J.A.; Heffelfinger,
D.M.; Ventzek, P.; Gilgenbach, R.M.; Photoacoustic and Photothermal Phenomena II.
Proceedings of the 6th International Topical Meeting p.194-7, 1990
