8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor

1/30

Packaging andCharacterization of SiliconCarbide ThyristorPower Modules

Presented by,

Sanjay B.R

M.Tech

S!"C

Mangalore

8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor

2/30

C#$T"$TS

%ntroduction

Module &abrication

Results and 'iscussions

Conclusions

References

8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor

3/30

. %ntroduction

Advantagesof SiC de(ices o(er their Sicounter)arts

SiC is a wide bandga) se*iconductor *aterialwhich allows it to be used at te*)eratures abo(e+-C, the *ai*u* o)erating te*)erature of Side(ices

/igher ther*al conducti(ity/igher breakdown electric 0eld strength/igher Saturation drift (elocity

/igher Ther*al stability/igher che*ical inertness1olu*etric reduction of SiC2based P" syste*sSi*)ler ther*al *anage*ent syste*s

8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor

4/30

3hy )ackaging4

&or Parallel con0guration of SiC de(ices Current yield of large2area SiC de(ices is low

)ri*arily due to *aterial defects.

To )ro*ote better ther*al cou)ling.

%t is i*)ortant that these )arallel2con0gured

SiC de(ices share current e5ually to reducethe )otential for failure.

8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor

5/30

3ork6

7 SiC thyristor de(ices with di*ensions of8**98**98.:** were )ackaged into asingle *odule on a direct bond co))er ;'BC