16
DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P15656EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form NE67718-A 2SC5750-A 50 pcs (Non reel) • 8 mm wide embossed taping NE67718-T1-A 2SC5750-T1-A 3 kpcs/reel • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 50 mA Total Power Dissipation Ptot Note 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. JEITA Part No. DISCONTINUED

NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

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Page 1: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

DATA SHEET

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.

Document No. P15656EJ1V0DS00 (1st edition)Date Published July 2001 NS CP(K)

NPN SILICON RF TRANSISTOR

NE67718 / 2SC5750NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)4-PIN SUPER MINIMOLD

FEATURES• Ideal for medium output power amplification

• PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

• HFT3 technology (fT = 12 GHz) adopted

• High reliability through use of gold electrodes

• 4-pin super minimold package

ORDERING INFORMATION

Part Number Quantity Supplying Form

NE67718-A2SC5750-A

50 pcs (Non reel) • 8 mm wide embossed taping

NE67718-T1-A2SC5750-T1-A

3 kpcs/reel• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 9.0 V

Collector to Emitter Voltage VCEO 6.0 V

Emitter to Base Voltage VEBO 2.0 V

Collector Current IC 50 mA

Total Power Dissipation Ptot Note 200 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

JEITAPart No.

DISCONTIN

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Page 2: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS2

NE67718 / 2SC5750

THERMAL RESISTANCE

Parameter Symbol Value Unit

Junction to Ambient Resistance Rth j-aNote 610 °C/W

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA

Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA − − 100 nA

DC Current Gain hFENote 1 VCE = 3 V, IC = 20 mA 75 120 150 −

RF Characteristics

Gain Bandwidth Product fT VCE = 3 V, IC = 20 mA, f = 2 GHz − 15.0 − GHz

Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 20 mA, f = 2 GHz 10.0 13.0 − dB

FNerugiF esioN VCE = 3 V, IC = 5 mA, f = 2 GHz,ZS = Zopt

− 1.7 2.5 dB

Reverse Transfer Capacitance CreNote 2 VCB = 3 V, IE = 0 mA, f = 1 MHz − 0.26 0.5 pF

Maximum Available Power Gain MAGNote 3 VCE = 3 V, IC = 20 mA, f = 2 GHz − 15.0 − dB

GniaG raeniL L VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz,Pin = −10 dBm

− 14.5 − dB

Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz,Pin = 1 dBm

− 15.0 − dBm

Collector Efficiency ηC VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz,Pin = 1 dBm

− 50 − %

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%2. Collector to base capacitance when the emitter grounded

3. MAG =

hFE CLASSIFICATION

Rank FB

Marking R54

hFE Value 75 to 150

(K – √√√√ (K2 – 1) )S21

S12

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Page 3: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS 3

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)

300

250

200

150

100

50

0 25 50 75 100 125 150

Tota

l Pow

er D

issi

patio

n P

tot (

mW

)

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATIONvs. AMBIENT TEMPERATURE

Mounted on Glass Epoxy PCB(1.08 cm2 × 1.0 mm (t) )

f = 1 MHz

Rev

erse

Tra

nsfe

r Cap

acita

nce

Cre (p

F)

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCEvs. COLLECTOR TO BASE VOLTAGE

0.5

0.4

0.3

0.2

0.1

5410 3 62

1 000

100

101 001011.0

DC

Cur

rent

Gai

n h

FE

Collector Current IC (mA)

DC CURRENT GAIN vs.COLLECTOR CURRENT

VCE = 3 V

VCE = 3 V

Col

lect

or C

urre

nt I

C (m

A)

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE

100

10

1

0.01

0.001

0.1

0.00010.70.6 0.19.08.05.0

Col

lect

or C

urre

nt I

C (m

A)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE

60

30

20

50

40

10

0 31 2 5 6 7 84

IB : 50 A stepμ

IB = 50 Aμ

100 Aμ

200 Aμ

300 Aμ

400 Aμ500 Aμ

NE67718 / 2SC5750

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Page 4: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS4

VCE = 3 VIC = 20 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY

Inse

rtion

Pow

er G

ain

|S21

e|2 (dB)

Max

imum

Ava

ilabl

e Po

wer

Gai

n M

AG (d

B)M

axim

um S

tabl

e Po

wer

Gai

n M

SG (d

B)

35

30

25

20

15

10

5

00.1 1 10

MAGMSG

|S21e|2

VCE = 3 Vf = 2.5 GHz

Collector Current IC (mA)

INSERTION POWER GAIN, MAGvs. COLLECTOR CURRENT

Inse

rtion

Pow

er G

ain

|S21

e|2 (dB)

Max

imum

Ava

ilabl

e Po

wer

Gai

n M

AG (d

B) 25

20

15

10

5

01 10 100

MAG

|S21e|2

VCE = 3 Vf = 2 GHz

Gai

n Ba

ndw

idth

Pro

duct

fT (

GH

z)

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT

15

10

5

010 0011

VCE = 3 Vf = 2 GHz

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT

Inse

rtion

Pow

er G

ain

|S21

e|2 (dB)

Max

imum

Ava

ilabl

e Po

wer

Gai

n M

AG (d

B)M

axim

um S

tabl

e Po

wer

Gai

n M

SG (d

B)25

20

15

10

5

01 10 100

|S21e|2

MAGMSG

VCE = 3 Vf = 1 GHz

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT

Inse

rtion

Pow

er G

ain

|S21

e|2 (dB)

Max

imum

Ava

ilabl

e Po

wer

Gai

n M

AG (d

B)M

axim

um S

tabl

e Po

wer

Gai

n M

SG (d

B)

25

5

10

15

20

01 10 100

MAGMSG

|S21e|2

NE67718 / 2SC5750

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Page 5: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS 5

VCE = 3.2 Vf = 0.9 GHzICq = 8 mA

25

20

15

10

5

0

250

50

100

200

150

05–02– –10 5051–

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER

Out

put P

ower

Pou

t (dB

m),

Pow

er G

ain

GP (

dB)

Col

lect

or C

urre

nt I

C (m

A), C

olle

ctor

Effi

cien

cyC (%

GP

Pout

IC

VCE = 2.8 Vf = 1.8 GHzICq = 8 mA

25

20

15

10

5

0

250

50

100

200

150

0051– –5 01501–

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER

Out

put P

ower

Pou

t (dB

m),

Pow

er G

ain

GP (

dB)

Col

lect

or C

urre

nt I

C (m

A), C

olle

ctor

Effi

cien

cyC (%

GP

Pout

IC

VCE = 3.2 Vf = 2.4 GHzICq = 8 mA

25

20

15

10

5

0

250

50

100

200

150

0051– –5 01501–

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER

Out

put P

ower

Pou

t (dB

m),

Pow

er G

ain

GP (

dB)

Col

lect

or C

urre

nt I

C (m

A), C

olle

ctor

Effi

cien

cyC (%

GP

Pout

IC

VCE = 3.2 Vf = 1.8 GHzICq = 8 mA

25

20

15

10

5

0

250

50

100

200

150

0051– –5 01501–

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER

Out

put P

ower

Pou

t (dB

m),

Pow

er G

ain

GP (

dB)

Col

lect

or C

urre

nt I

C (m

A), C

olle

ctor

Effi

cien

cyC (%

GP

Pout

IC

NE67718 / 2SC5750

DISCONTIN

UED

Page 6: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS6

8

6

4

2

0

16

4

12

8

01 10 100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENT

Noi

se F

igur

e N

F (d

B)

Asso

ciat

ed G

ain

Ga (

dB)

VCE = 3 Vf = 2 GHz

NF

Ga

Remark The graphs indicate nominal characteristics.

NE67718 / 2SC5750

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Page 7: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS 7

S-PARAMETERS

Note When K ≥ 1, the MAG (Maximum Available Power Gain) is used. MAG =

When K < 1, the MSG (Maximum Stable Power Gain) is used. MSG =

VCE = 3 V, IC = 1 mA, ZO = 50 Ω

Note

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.04.0

0.9750.9630.9490.9270.9010.8750.8450.8190.793

0.7640.7450.7200.7010.6840.6720.6550.6480.6390.636

0.6300.6330.6280.6260.6270.6310.6330.6380.6440.651

0.6510.727

−8.7−18.3−28.6−37.6−46.1−55.0−63.7−71.6−79.7

−87.4−95.4

−102.9−110.4−117.5−124.7−131.2−137.7−143.8−150.3

−155.9−161.3−166.5−171.5−176.2179.3175.1170.8167.0163.8

159.9129.8

3.4123.3393.3323.2323.1443.0242.9202.7852.692

2.5832.4852.3762.2922.1902.1062.0161.9391.8451.776

1.6951.6371.5631.5101.4471.3911.3291.2801.2271.181

1.1330.752

172.7164.4155.8148.0140.6133.5126.5120.0113.7

107.3101.596.090.384.979.774.469.464.659.8

54.950.546.041.837.633.629.725.722.218.9

15.6−15.0

0.0170.0320.0470.0610.0740.0850.0940.1010.108

0.1120.1170.1190.1210.1220.1220.1210.1200.1170.114

0.1110.1070.1030.0980.0930.0880.0830.0790.0740.071

0.0680.087

83.076.670.363.757.351.146.040.535.7

31.326.822.818.514.911.47.94.82.0

−0.7

−2.8−4.4−5.7−6.9−7.9−8.0−7.9−6.8−5.0−3.2

0.028.6

1.0040.9910.9890.9680.9560.9260.9050.8730.854

0.8260.8120.7890.7780.7600.7510.7330.7250.7090.707

0.6920.6970.6880.6930.6870.6920.6900.6920.6930.694

0.6870.756

−4.9−10.2−15.2−20.3−25.2−29.9−34.3−38.7−42.6

−46.7−50.5−54.4−58.1−61.9−65.7−69.5−73.4−77.3−81.4

−85.2−89.7−93.3−97.8

−101.6−106.1−110.0−114.3−117.8−121.6

−125.7−167.7

0.0370.0680.0870.1280.1630.2000.2260.2700.298

0.3430.3630.4020.4290.4720.4920.5550.5840.6530.675

0.7570.7650.8580.9001.0011.0491.1561.2331.3341.412

1.5781.241

23.0220.1918.5017.2416.3015.5414.9114.4013.96

13.6113.2913.0012.7712.5512.3612.2112.1012.0011.92

11.8411.8311.8311.8911.7110.649.649.208.718.38

7.736.43

S21

S12(K – √√√√ (K2 – 1) )

S21

S12

NE67718 / 2SC5750

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Page 8: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS8

VCE = 3 V, IC = 3 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.04.0

0.9020.8830.8420.7960.7510.7090.6670.6310.606

0.5820.5660.5470.5390.5290.5270.5190.5200.5190.521

0.5240.5300.5330.5380.5460.5510.5560.5650.5710.581

0.5840.676

−14.3−28.6−43.1−55.6−67.3−78.4−88.9−98.3

−107.2

−115.6−123.9−131.5−139.0−145.6−152.4−158.3−164.0−169.3−174.4

−179.2176.3172.3168.3164.7161.2158.0154.4151.6149.3

146.4122.6

9.8189.3648.9678.3907.8347.2196.6996.1835.767

5.3825.0394.7004.4454.1683.9503.7303.5423.3483.186

3.0242.9012.7632.6552.5382.4412.3402.2452.1522.077

2.0051.396

169.5157.6146.7137.2128.7121.0113.8107.4101.5

95.990.786.281.376.772.568.264.260.456.5

52.548.945.341.838.334.931.728.425.322.3

19.3−9.7

0.0160.0300.0430.0540.0620.0680.0730.0760.079

0.0810.0820.0830.0830.0830.0840.0830.0830.0820.082

0.0820.0810.0810.0800.0800.0800.0810.0810.0820.083

0.0850.115

80.571.363.956.549.844.039.735.632.2

29.527.025.022.921.420.219.218.417.917.6

17.618.218.819.620.221.021.923.224.425.3

26.428.8

0.9940.9590.9280.8740.8290.7730.7300.6820.650

0.6150.5930.5670.5510.5310.5200.5020.4950.4800.477

0.4670.4710.4640.4710.4670.4730.4720.4780.4800.485

0.4840.581

−8.0−16.2−23.5−30.4−36.3−41.6−46.1−50.5−54.2

−57.9−61.3−64.7−67.9−71.4−74.7−78.2−81.7−85.2−88.9

−92.7−96.9

−100.5−104.7−108.2−112.3−115.9−119.9−123.3−126.9

−130.8−170.2

0.0500.1190.1470.2030.2520.3080.3540.4180.461

0.5180.5570.6180.6580.7190.7560.8240.8680.9400.981

1.0391.0641.1261.1481.1961.2211.2611.2731.3011.292

1.3211.046

27.8524.9123.1921.9521.0320.2719.6119.1118.63

18.2417.8917.5417.2816.9916.7516.5116.3216.1115.91

14.4713.9913.1912.8512.3312.0011.5511.2710.9010.71

10.329.54

NE67718 / 2SC5750

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Data Sheet P15656EJ1V0DS 9

VCE = 3 V, IC = 5 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.04.0

0.8410.8060.7590.7020.6490.6070.5690.5420.521

0.5060.4950.4860.4830.4800.4830.4810.4860.4900.494

0.4980.5090.5130.5190.5260.5330.5410.5500.5580.570

0.5720.665

−17.9−36.5−54.0−68.8−81.9−93.9

−105.1−114.4−123.4

−131.9−139.9−146.8−153.9−160.0−165.8−171.2−176.3179.1174.6

170.6167.0163.0159.8156.4153.4150.6147.6145.2143.1

140.4119.1

14.94713.88512.87111.66310.5599.5078.6277.8287.202

6.6276.1565.7005.3384.9954.6894.4204.1833.9523.746

3.5593.4003.2393.1052.9692.8532.7322.6282.5172.430

2.3551.663

166.5152.5140.2130.0121.2113.6106.7100.995.3

90.385.681.477.073.169.265.661.958.454.9

51.348.144.841.638.335.232.329.326.323.5

20.7−6.9

0.0150.0290.0390.0480.0530.0570.0610.0630.065

0.0670.0680.0690.0700.0710.0720.0730.0730.0740.076

0.0770.0780.0790.0810.0820.0840.0860.0880.0900.092

0.0950.126

79.268.660.053.046.942.038.936.234.0

32.631.430.529.429.128.728.828.729.128.8

29.330.130.431.031.431.832.132.733.133.2

33.529.5

0.9830.9260.8700.7960.7320.6670.6170.5700.538

0.5050.4840.4600.4450.4280.4190.4040.3990.3860.386

0.3760.3810.3760.3830.3810.3890.3890.3950.3980.405

0.4040.511

−10.6−20.8−29.5−37.0−43.0−48.2−52.4−56.3−59.6

−63.1−66.2−69.5−72.6−75.7−78.9−82.2−85.7−89.4−93.3

−97.1−101.4−105.1−109.3−112.9−117.0−120.4−124.5−127.8−131.5

−135.3−173.5

0.0750.1530.1970.2660.3350.4050.4690.5400.598

0.6590.7080.7730.8190.8740.9160.9741.0081.0581.087

1.1321.1341.1731.1821.2121.2101.2251.2231.2311.212

1.2231.013

29.9126.8325.1823.9022.9722.1921.5020.9420.44

19.9819.5719.1718.8318.4818.1617.8516.9915.7815.15

14.4514.1613.5813.2612.8112.5512.1711.9211.5811.44

11.1110.51

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Data Sheet P15656EJ1V0DS10

VCE = 3 V, IC = 8 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.0

0.7730.7250.6640.6050.5570.5230.4980.4770.465

0.4590.4550.4500.4530.4530.4620.4610.4690.4760.481

0.4890.5000.5080.5110.5200.5300.5340.5450.5530.565

0.567

−23.1−45.9−66.5−82.9−97.3

−109.8−120.9−130.1−138.7

−146.5−153.6−160.0−166.3−171.7−176.9178.4174.2170.4166.2

162.6159.5156.3153.4150.5147.8145.1142.7140.1138.6

136.1

20.89118.75116.73514.64512.88611.34310.1289.0658.267

7.5416.9566.4175.9775.5715.2234.9124.6434.3744.150

3.9313.7563.5743.4253.2773.1493.0142.9002.7802.689

2.606

163.0147.0133.4123.0114.2107.2100.895.490.4

85.981.878.074.070.467.063.460.357.053.8

50.547.444.441.538.435.432.829.827.124.3

21.6

0.0140.0260.0350.0410.0450.0490.0510.0530.055

0.0570.0590.0610.0620.0640.0660.0680.0700.0720.074

0.0760.0790.0810.0830.0850.0880.0910.0930.0960.099

0.102

73.364.656.450.646.142.640.639.138.4

37.937.537.537.337.437.637.838.038.138.0

38.238.738.838.738.838.838.638.638.538.0

37.8

0.9640.8810.7970.7050.6330.5660.5190.4740.445

0.4160.3970.3770.3670.3520.3450.3320.3280.3170.318

0.3110.3160.3140.3220.3210.3290.3300.3380.3410.349

0.350

−13.5−26.0−35.5−43.2−48.8−53.7−57.2−60.7−63.7

−66.9−69.8−73.2−76.0−79.3−82.5−85.9−89.6−93.3−97.5

−101.5−106.0−109.9−114.2−117.9−122.0−125.5−129.6−132.9−136.6

−140.4

0.1590.2050.2710.3550.4360.5210.5930.6780.735

0.8010.8510.9080.9460.9961.0191.0691.0901.1201.137

1.1591.1591.1681.1791.1921.1771.1881.1801.1821.157

1.166

31.6228.5826.7725.5124.5323.6922.9722.3221.76

21.2320.7420.2619.8319.4018.1517.0016.4215.7415.24

14.6914.3813.9513.5813.1912.9812.5712.3512.0211.93

11.61

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Data Sheet P15656EJ1V0DS 11

VCE = 3 V, IC = 10 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.0

0.7360.6790.6130.5600.5180.4890.4700.4540.447

0.4410.4410.4400.4460.4470.4570.4580.4660.4710.481

0.4880.4990.5050.5100.5180.5280.5350.5450.5550.565

0.568

−26.3−51.6−73.4−90.4

−105.3−117.7−128.5−137.3−145.8

−153.2−159.9−165.8−171.6−176.5178.4174.2170.2166.4162.8

159.4156.7153.2150.8148.2145.6143.0140.6138.2136.7

134.3

24.16021.26418.53315.92513.84712.07210.7149.5518.674

7.9027.2646.6936.2375.7965.4285.0944.8234.5304.303

4.0763.8923.7053.5463.3923.2603.1233.0032.8822.781

2.698

161.1144.1130.1119.7111.1104.398.393.288.5

84.180.276.572.869.466.062.659.556.553.3

50.147.144.241.338.335.532.730.027.324.6

22.0

0.0130.0250.0330.0380.0420.0450.0470.0490.051

0.0530.0550.0580.0600.0620.0640.0670.0690.0710.074

0.0770.0790.0820.0850.0870.0900.0930.0960.0990.102

0.105

73.263.455.150.546.143.242.341.440.9

41.140.841.341.241.441.741.841.641.841.5

41.741.941.841.741.841.441.040.740.339.9

39.3

0.9530.8540.7570.6590.5870.5200.4750.4330.405

0.3780.3620.3440.3350.3200.3150.3030.3000.2910.292

0.2860.2920.2900.2980.2980.3070.3080.3160.3200.329

0.329

−15.3−28.6−38.4−46.0−51.3−55.8−59.1−62.5−65.4

−68.6−71.3−74.7−77.5−80.9−83.9−87.6−91.3−95.2−99.6

−103.7−108.3−112.3−116.6−120.4−124.4−128.0−132.1−135.4−139.1

−143.0

0.1550.2280.3140.4030.4930.5870.6590.7450.802

0.8680.9120.9630.9931.0391.0581.0961.1071.1451.143

1.1621.1581.1711.1711.1781.1661.1661.1611.1571.140

1.147

32.5629.2827.5026.2025.2024.3323.5522.8922.27

21.7121.1720.6520.2018.5117.8116.9516.4515.7315.35

14.8114.5014.0413.7113.3413.1012.7712.5212.2412.08

11.78

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Page 12: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

Data Sheet P15656EJ1V0DS12

VCE = 3 V, IC = 20 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.0

0.5980.5360.4900.4590.4380.4270.4220.4180.420

0.4200.4260.4290.4390.4410.4530.4580.4680.4750.484

0.4930.5010.5100.5170.5260.5320.5410.5530.5600.570

0.576

−38.9−70.7−96.4

−114.3−128.9−140.0−149.6−157.1−163.7

−169.7−175.0−179.6175.9171.8167.9164.3161.2158.2154.9

151.9149.9147.2145.0142.5140.3138.3135.7134.0132.6

130.3

34.34228.00122.82318.73915.79313.49311.82010.4359.421

8.5377.8127.1776.6546.1905.7705.4225.1174.8244.564

4.3234.1223.9223.7563.5873.4503.3033.1753.0482.945

2.857

154.8134.8120.7111.0103.497.492.287.883.6

79.876.373.169.766.663.560.457.654.851.9

48.846.243.540.737.935.332.730.127.524.9

22.4

0.0120.0210.0270.0300.0330.0360.0390.0410.044

0.0470.0500.0530.0560.0590.0620.0660.0690.0720.075

0.0790.0820.0850.0890.0920.0950.0990.1020.1050.108

0.111

67.460.153.450.349.248.549.549.649.9

50.650.851.151.051.151.250.850.750.249.7

49.248.848.647.847.446.745.845.244.543.6

42.8

0.9050.7570.6330.5310.4630.4050.3680.3340.314

0.2940.2820.2690.2630.2520.2500.2410.2400.2330.237

0.2340.2410.2410.2500.2520.2620.2650.2750.2780.289

0.291

−20.6−36.1−45.8−52.5−56.6−60.1−62.6−65.6−68.0

−71.2−73.8−77.4−80.1−84.0−87.2−91.2−95.3−99.7

−104.4

−109.1−113.9−118.3−122.7−126.7−130.7−134.3−138.4−141.8−145.5

−149.3

0.2400.3400.4550.5760.6800.7790.8490.9240.966

1.0191.0431.0771.0931.1171.1221.1381.1391.1521.152

1.1581.1511.1521.1471.1471.1401.1331.1251.1241.104

1.104

34.4031.2129.3427.9126.7725.7424.8324.0123.28

21.7620.6619.6218.9018.1217.5416.9216.4515.9015.46

15.0014.6614.2513.9513.6013.3313.0312.8012.4912.38

12.13

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Data Sheet P15656EJ1V0DS 13

VCE = 3 V, IC = 30 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.0

0.4960.4660.4460.4310.4170.4170.4200.4190.423

0.4260.4320.4360.4470.4510.4620.4670.4780.4850.494

0.5000.5110.5210.5280.5360.5450.5520.5610.5710.581

0.582

−48.3−84.4

−111.3−128.8−141.1−151.5−159.4−166.1−171.8

−177.1178.3173.9170.5166.8163.4160.2157.4154.5151.8

149.0146.9144.5142.4140.0138.2136.1133.8132.1130.8

128.8

39.29530.36823.90019.28416.05513.63111.87510.4599.410

8.5107.7807.1386.6126.1335.7315.3855.0714.7714.524

4.2844.0873.8813.7173.5483.4133.2743.1413.0182.912

2.825

150.8129.8116.0106.999.894.389.485.381.4

77.774.471.468.165.162.159.356.453.750.8

47.945.242.639.937.134.532.029.426.824.2

21.9

0.0120.0190.0240.0270.0300.0330.0360.0390.042

0.0450.0480.0520.0550.0590.0620.0650.0690.0720.076

0.0800.0830.0870.0900.0940.0970.1010.1040.1070.111

0.114

73.358.753.252.551.952.353.453.954.5

54.855.155.355.355.354.854.454.153.552.7

52.251.751.150.349.648.747.747.046.145.2

44.3

0.8680.6950.5660.4690.4080.3570.3260.2970.280

0.2630.2540.2430.2390.2300.2290.2200.2220.2150.220

0.2180.2260.2270.2370.2390.2500.2530.2640.2680.279

0.282

−23.6−39.6−48.4−54.3−57.4−60.4−62.3−65.1−67.3

−70.5−73.2−76.8−79.7−83.7−87.1−91.4−95.5

−100.2−105.2

−110.1−115.1−119.6−124.1−128.3−132.3−136.0−140.1−143.5−147.1

−151.0

0.2450.4200.5480.6760.7840.8820.9371.0091.042

1.0801.1011.1261.1261.1471.1471.1581.1551.1671.161

1.1641.1521.1521.1471.1451.1311.1271.1231.1141.098

1.104

35.0832.0230.0528.5127.2526.2025.1723.7322.26

21.0320.1419.2518.6317.8717.3316.7416.2915.7215.33

14.8414.5514.1413.8413.4813.2712.9612.6812.4412.30

11.99

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Data Sheet P15656EJ1V0DS14

VCE = 3 V, IC = 40 mA, ZO = 50 Ω

Frequency S11 S21 S12 S22 K MAG/MSG

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. (dB)(deg.) (deg.) (deg.) (deg.)

0.10.20.30.40.50.60.70.80.9

1.01.11.21.31.41.51.61.71.81.9

2.02.12.22.32.42.52.62.72.82.9

3.0

0.4600.4350.4280.4220.4220.4240.4290.4310.437

0.4400.4470.4530.4610.4670.4770.4820.4930.5000.512

0.5160.5270.5350.5420.5490.5590.5660.5760.5850.596

0.598

−56.0−96.7

−122.5−138.4−150.2−159.0−166.6−172.0−177.1

178.1173.9170.4166.7163.4160.4157.4154.9152.1149.5

146.8145.0142.5140.6138.4136.5134.3132.4130.4129.1

127.3

41.11530.63623.53518.75515.50713.09511.39910.0159.006

8.1267.4246.8146.3005.8505.4615.1224.8334.5464.300

4.0753.8863.6943.5313.3733.2473.1072.9852.8622.764

2.685

147.7126.2112.7104.197.392.187.483.579.7

76.272.970.066.763.861.058.055.352.449.6

46.744.041.438.735.933.230.728.325.622.9

20.6

0.0110.0180.0220.0260.0280.0310.0340.0380.041

0.0440.0470.0510.0550.0580.0620.0650.0690.0720.076

0.0800.0840.0870.0910.0940.0980.1010.1050.1080.112

0.115

66.059.454.653.754.054.555.756.656.9

57.357.757.757.457.457.056.656.055.454.3

53.853.352.551.650.950.149.048.247.446.3

45.4

0.8330.6460.5190.4280.3740.3290.3020.2770.263

0.2490.2420.2320.2290.2210.2210.2140.2160.2110.216

0.2140.2230.2240.2350.2380.2490.2520.2640.2690.280

0.283

−25.6−41.3−49.2−54.0−56.4−58.9−60.5−63.0−65.2

−68.3−71.1−74.8−77.9−81.8−85.4−89.7−94.1−99.0

−104.0

−109.1−114.3−118.8−123.5−127.7−131.8−135.6−139.8−143.2−147.0

−150.9

0.3310.4740.6260.7620.8680.9671.0121.0721.099

1.1321.1491.1671.1711.1861.1821.1901.1841.1921.179

1.1901.1741.1751.1621.1651.1471.1451.1351.1281.107

1.109

35.8932.2130.2628.6627.3926.2724.5122.6221.52

20.4319.6018.7818.1217.4316.8916.3015.8715.3314.95

14.4514.1513.7513.4513.0812.8912.5612.3212.0511.94

11.67

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Data Sheet P15656EJ1V0DS 15

PACKAGE DIMENSIONS

4-PIN SUPER MINIMOLD (UNIT: mm)

PIN CONNECTIONS1. Collector2. Emitter3. Base4. Emitter

0.9±

0.1

0.15

+0.1

–0.0

5

0.3

0 to

0.1

R54

3

1.30

2.0±

0.2

1.25

0.65

0.60

4

21

2.1±0.2

1.25±0.1

0.65

0.65

0.4+0

.1–0

.05

0.3+0

.1–0

.05

0.3+0

.1–0

.05

0.3+0

.1–0

.05

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Page 16: NPN SILICON RF TRANSISTOR NE67718 / 2SC5750 · NE67718 / 2SC5750 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a Note 610 °C/W Note Mounted

NOTICE

1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.

2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

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6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges.

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11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas

Electronics products, or if you have any other inquiries.

NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.NOTE 3: Products and product information are subject to change without notice.

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