Novel Roll -to-Roll Manufacturing Techniques for ...Novel Roll -to-Roll Manufacturing Techniques for Patterning Conductive Layers Fall 2006 AIMCAL Technical Conference 57 Smith Place

October 22, 2006October 22, 2006 11

Novel RollNovel Roll--toto--Roll Manufacturing Techniques Roll Manufacturing Techniques for Patterning Conductive Layersfor Patterning Conductive Layers

Fall 2006 AIMCAL Technical ConferenceFall 2006 AIMCAL Technical Conference

57 Smith Place57 Smith Place

Cambridge, MA 02138Cambridge, MA 02138

www.microcontinuum.comwww.microcontinuum.com

W. Dennis Slafer / Robert PrainoW. Dennis Slafer / Robert Praino

617.354.1092617.354.1092

October 22, 2006October 22, 2006

22MicroContinuum, IncCambridge, MA

Company EvolutionCompany Evolution

Devise, Devise,

develop,develop,

andand

commercialize commercialize

new new

applications applications

based on based on

core core

technologytechnology

20 yrs @ Polaroid

MicroContinuum

Established in

1998,

Cambridge, MA

Physics

Applied chemistry

Engineering

Optics

Thin film coating

Specialized optical

component sales

Data storage Conductive

structures



MicroContinuumMicroContinuumTechnology ToolkitTechnology Toolkit

Unique roll-to-roll manufacturing processes

vacuum deposition

layer transfer

multi-layer lamination thin-film

chemistry

precision pattern

replication

micro/nanoprinting

phase change

materials

Core Technology

CostCapacity Unit Area

atmospheric coating



MicroContinuum's Operating Space

0.01

0.1

1

10

100

1000

Semi-conductors Micon Ink Jet Flex Circuits

Technology

Fe

atu

re s

ize

, m

icro

ns

Min Feature Range

Max Feature Range

““SpatialSpatial”” RangeRange

Micon’s Positionw/ r2r potential

& Micon downstream processing – PVD, etc



Demonstrated ApplicationsDemonstrated Applications

Optical Discs, Optical Discs, Cards, and Cards, and Tape on a RollTape on a Roll

Precision Layer TransferPrecision Layer TransferContinuous Continuous Processing Processing in Microcupsin Microcups

Patterned Patterned Conductors Conductors on Flexible on Flexible Substrates Substrates

Selective Removal (IR Selective Removal (IR Photonic Crystals)Photonic Crystals)

HiHi--Res IR DetectorsRes IR DetectorsPolymer Polymer MicrostructuresMicrostructures

Polymer Polymer Waveguide Waveguide ArraysArrays



USDC Project Overview USDC Project Overview

§§ Application of the technology toolkit to produce patterned transApplication of the technology toolkit to produce patterned transparent parent conductive layers: conductive layers:

§§ Demonstration of the potential in Demonstration of the potential in ““couponcoupon”” formform

§§ Design an electrode test pattern and Design an electrode test pattern and create durable toolingcreate durable tooling

§§ Design should be Design should be ““resolution targetsresolution targets”” with a range of line widths, with a range of line widths, spaces, and geometriesspaces, and geometries

§§ Evaluate Evaluate twotwo patterned conductor patterned conductor fabrication processesfabrication processes

§§ Uncoated flexible substrate (PEN) for Uncoated flexible substrate (PEN) for ““additive processadditive process””

§§ ITO coated flexible substrate for ITO coated flexible substrate for ““subtractive processsubtractive process””

§§ Description of the Description of the path to r2rpath to r2r operations operations



Process Map OptionsProcess Map Options

Additive

Generate master tooling

Emboss UV

mask layer

Etch mask

Deposit ITO

Remove mask

Etch ITO

Remove mask Subtractive



USDC Project Results USDC Project Results

§§ Tool designTool design

§§ Material evaluation Material evaluation

§§ FlexmaskFlexmask adhesion modulationadhesion modulation

§§ Pattern formation optimization Pattern formation optimization

§§ Etch processing Etch processing (plasma) (plasma)

§§ Feature clean out Feature clean out

§§ ITO etch ITO etch

§§ FlexmaskFlexmask removal process optionsremoval process options§§ Dry adhesive strip Dry adhesive strip

§§ Plasma Plasma

§§ Wet chemical removal Wet chemical removal



Tool DesignTool Design§§ Large and small featuresLarge and small features

Photoresist pattern on Si wafer showing 3 µm “bars”delaminated from Si substrate (optical micrograph)

CAD design for test pattern “USDC test pattern” (left: overall pattern; center, right: selected enlargements)



Material EvaluationMaterial Evaluation§§ SubstrateSubstrate

§§ w/ & w/o surface treatmentw/ & w/o surface treatment

§§ PEN, PET *PEN, PET *

§§ ITO Coated substrate from 4 commercial sources **ITO Coated substrate from 4 commercial sources **

§§ Monomer MaskMonomer Mask§§ 8 suppliers, 43 materials, both custom and off8 suppliers, 43 materials, both custom and off--thethe--shelf shelf

§§ Customized spectral sensitivity Customized spectral sensitivity

§§ EvaluationEvaluation§§ Cure time & energyCure time & energy

§§ Adhesion (fresh and aged) Adhesion (fresh and aged)

§§ Tool release Tool release

§§ Solvent resistance (fresh and aged) Solvent resistance (fresh and aged)

* * DupontDupont Teijin FilmsTeijin Films

** ** TechniTechni--Met Inc, Met Inc, BekaertBekaert Specialty Films, Specialty Films, CPFilmsCPFilms, , SheldahlSheldahl



Impact of Substrate On Material SelectionImpact of Substrate On Material Selection

PEN Absorption

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

350 450 550 650 750

Wavelength (nm)

PEN 1

PEN 2

Optical absorption vs wavelength for two PEN films (5 mil PEN1 and 2.5 mil PEN2)

Many “std” UV-cure materials could not be used

Custom formulations used



Adhesion Promotion Adhesion Promotion ITO Surface TreatmentITO Surface Treatment

Complete mask transfer

No mask transfer

Partial mask transfer

Complete mask transfer

No surface

treat

Light surface

treat

Good surface

treat

Good surface

treat

Mask area is lighter color



Pattern FormationPattern Formation



Replication Accuracy Replication Accuracy

Polymask replicas on PEN of the 3µm trenches (left, center) and 5 µm trenches (right) from defective portions of the photoresist master.

Small Features

Large Features

Embossed polymer mask on PEN substrate, using alternate tool w/small features

Courtesy of PARC



Impact of Impact of Feature Size On Feature Size On

ReplicationReplication

5 micron tool feature shapes

-5

-4

-3

-2

-1

0

1

0 500 1000 1500 2000 2500

X-distance, microns

Su

rface t

op

olo

gy, u

m

050725-8.3

050725-8.4

Moderate polymer residue

Low polymer residue

5 micron tool feature shapes

-4.5

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

0.5

0 1000 2000 3000 4000 5000 6000 7000 8000

X-distance, microns

Su

rface t

op

olo

gy, u

m

050725-8.1.1High polymer residue

“Larger” features require a modified process or a modified tool design



Impact of Embossing Process WindowImpact of Embossing Process Window

5 micron tool feature shape - Emboss Process #1

10 micron tool feature shape - Emboss Process #2

-8

-7

-6

-5

-4

-3

-2

-1

0

1

0 2000 4000 6000 8000 10000 12000 14000

X-distance, microns

Su

rface t

op

olo

gy, u

m

050725-8.1.1

050802-4B

Low polymer residue



Features and Features and ““FillingFilling””



Mask Etching Mask Etching èè Feature Clearing Feature Clearing Impact of Plasma Process WindowImpact of Plasma Process Window

Average Etch Rate For Various Polymers

Baseline vs. Improved Etch Process Conditions

0

2

4

6

8

10

12

14

16

B1 N B1 B2 B3 N

Polymer Identification

Etc

h r

ate

, n

m/s

ec

Avg rate for polymer

Process #1

Process #2



ITO Etching ITO Etching èè Feature Clearing Feature Clearing Selective Plasma ProcessingSelective Plasma Processing

ITO etch depth vs. etch time. Note that ITO 1 and ITO 2 are different thickness, as indicated by the different etch times

ITO Etching - Thickness vs. etch time

0

500

1000

1500

2000

2500

3000

3500

0 100 200 300 400 500 600 700

ITO Etch Time, sec

An

gs

tro

ms

ITO 1

ITO 2

Good cut-off at PET or PEN surface

Etch Times, sec0 75 90 100 125 150 200

Etched 0.5” x 3” ITO sample strips



Polymer Mask StripPolymer Mask Strip§§ Dry Dry flexmaskflexmask delaminationdelamination (with adhesive strip sheet) not robust with (with adhesive strip sheet) not robust with

material set tested tomaterial set tested to--date date

§§ Plasma processing impactPlasma processing impact

§§ AgingAging

§§ Plasma Plasma flexmaskflexmask etching etching

§§ Process cycle time is slow Process cycle time is slow (influenced by mask thickness)(influenced by mask thickness)

§§ May be impacted by plasma process equipment used (May be impacted by plasma process equipment used (r/dr/d scale) scale)

§§ Long process time impact on substrate (in Long process time impact on substrate (in ““ITO clearedITO cleared”” areas)areas)

§§ Wet processing Wet processing

§§ Initial results Initial results –– robust removal raterobust removal rate

§§ Offers potential cost benefitOffers potential cost benefit



Polymer Mask RemovalPolymer Mask Removal

ITO

Cleared mask/ substrate exposed

Masked area

Cleared mask area



Polymer Mask Removal Polymer Mask Removal

5 µm

Courtesy of PARC

Un-removed polymer mask

Removed polymer mask



Summary Summary -- Technical Achievements Technical Achievements (50K ft view)(50K ft view)

§§ Tooling design and fabrication demonstrated (hardened polymer & Tooling design and fabrication demonstrated (hardened polymer & Ni)Ni)

§§ Additive and subtractive processes have been usedAdditive and subtractive processes have been used

§§ Mask materials identified usable with PEN Mask materials identified usable with PEN (spectral sensitivity critical) (spectral sensitivity critical)

§§ Process window for mask formation testing completedProcess window for mask formation testing completed

§§ Selective plasma etching processes demonstrated Selective plasma etching processes demonstrated

§§ Preliminary cost modeling done Preliminary cost modeling done èè driving a process map change driving a process map change



HOW ABOUT A PRODUCT ? HOW ABOUT A PRODUCT ?

§§ Transparent conductive structure Transparent conductive structure

§§ High conductivityHigh conductivity

§§ High optical transmissionHigh optical transmission

§§ Survives flex testing Survives flex testing

§§ Not ITO & not organic Not ITO & not organic

Common electrodesCommon electrodes

EMI shielding EMI shielding

Courtesy of Chasm Technologies Courtesy of Chasm Technologies



Visible Light TransmissionVisible Light TransmissionDetermined by grid OADetermined by grid OA

s

design w s s/w OA

A 25 250 10 83%B 10 200 20 91%

w

Open Area Calculation

70%

75%

80%

85%

90%

95%

100%

1 10 100 1000

s/w

% O

pen

Are

a

Courtesy of Chasm Technologies



Transparency vs. ITO Transparency vs. ITO

Visible Light Transmittance

0.0%

20.0%

40.0%

60.0%

80.0%

100.0%

PET ITO 15 ITO 100 Ag grid

400nm

550nm

750nm




Sheet ResistanceSheet ResistanceGrid vs. Metal FilmGrid vs. Metal Film

Sheet Resistance, Ag grid vs. film

(Grid dimensions: w ~ 25 microns, s ~ 250 microns)

y = 13.969x + 0.2349

R2 = 0.9993

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40

Ag film sheet resistance (ohm/sq)

Ag

gri

d s

he

et

res

ista

nc

e (

oh

m/s

q)

Sheet Resistance, Ag grid vs. film

(Grid dimensions: w ~ 25 microns, s ~ 250 microns)

y = 13.969x + 0.2349

R2 = 0.9993

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40

Ag film sheet resistance (ohm/sq)

Ag

gri

d s

he

et

resis

tan

ce

(o

hm

/sq

)




EMI shieldingEMI shieldingGrid vs. ITOGrid vs. ITO

Shielding Effectiveness (dB)

0.0

5.010.0

15.0

20.0

25.0

30.0

35.0

40.0

ITO 15 ITO 100 Ag grid Ag grid / ITO

100

2GHz

10GHz

22GHz




Flex EnduranceFlex EnduranceInitial ResultsInitial Results

Flex Endurance, 8mm Mandrel

1

10

100

1,000

10,000

100,000

1,000,000

Ag grid Ag grid / ITO 100 ITO 15 ITO 100

Resis

tan

ce (

Oh

ms)

Initial

100 cycles




R2R Patterning & Vacuum Processing R2R Patterning & Vacuum Processing



AcknowlegdmentsAcknowlegdments

USDC USDC Chasm TechnologiesChasm Technologies

Documents

Novel Roll -to-Roll Manufacturing Techniques for ...Novel Roll -to-Roll Manufacturing Techniques for Patterning Conductive Layers Fall 2006 AIMCAL Technical Conference 57 Smith Place