AD-A099 516 HARRY DIAMOND LABS ADELPHI MD F/ 9/2INVESTI6ATIONS OF PHOTOVOLTAIC FERROELECTRIC-SEMICONOUCTOR V-V.TCIU)MAR 81 P S BROOY

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Investigations of Photovoltaic

'~Ferroelectric-Semiconductor Nonvolatilej Tcnalep -tZMemory ....... . REPORT NUMBER

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HDL Project: AI00C4DRCMS Code: 611101.91.AO011

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MemoryFerroelectric-semiconductor hybrid

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-- The feasibility of a new kind of nonvolatile digital memoryis proposed and examined. The basis of the memory is an anomalousphotovoltaic phenomenon found in ferroelectric ceramics--a photo-voltage with a polarity that depends on the direction of theremanent polarization. Described are proposed memory cell struc-tures that function in matrix arrangements as nonvolatileread/write random access memory or electrically alterable program-

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20. bstract (Cont'd)

Pmable read-only memory. Test results obtained with an experimen-Atal t.est unit also are described. Included is a survey of methods

for producing ferroelectric films.

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CONTENTS

Page

1. INTRODUCTION ....................... .......................... 5

2. MEMORY CELL ....................... 6

3o TEST DEVICE AND EXPERIMENTAL RESULTS .......................... 9

4. FERROELECTRIC CERAMIC FILMS ...................... o ........ s. 14

5. COMPARISON WITH EAPROM DEVICE ............................... o ....... 16

LITERATURE CITED ................... ... ......................... 18

SELECTED BIBLIOGRAPHY ............................ ...... .... 19

DISTRIBUTION ...................... .............................. . 21

FIGURES

1 Planar structure ferroelectric memory element as used in testdevice ................. *........,.......................... . 7

2 Proposed read/write RAM cell .......... ...................... 7

3 EAPROM cell ................................................... 9

4 Circuit for test device ...................................... 9

5 Photoelectromotive forces produced by successive 11-ps, 140-Vpulses .......................................... o. 10

6 Photoelectromotive forces produced by successive 150-ns,140-V pulses ............................... ............. 11

7 Photoelectromotive forces as function of illuminationintensity . ... . . . ...................................... 12

8 Short-circuit current (zero applied field) as function ofillumination intensity .... ..................... ..... o........ 12

9 Time history of element photoelectromotive forces ............. 13

10 Logic I and logic 0 at 0.5 and 100 hr .... .................... 14

3

1. INTRODUCTION

This paper proposes and experimentally examines the feasibility of anew kind of nonvolatile digital electronic memory. The basis of thememory is an anomalous photovoltaic phenomenon found in ferroelectricceramics--a photovoltage with a polarity that depends on the directionof the remanent polarization. Opposite-polarity photoelectromotiveforces (emf's) are associated with opposite directions of remanent po-larization, and the magnitude of the photo-emf is linearly proportionalto the magnitude of the remanent polarization.*

Various schemes to use this phenomenon for storage and retrieval ofinformation have been described. In all of these schemes, informationis stored within an element or a substrate as direction and magnitude ofremanent polarization and is retrieved by sensing the polarity or themagnitude of an emf (a photo-emf) produced by the illumination.

The proposed digital electronic memories combine ferroelectric andsemiconductor elements electrically in addressable matrix cells. Binaryform digital data are stored as remanent polarization within an array ofilluminated ferroelectric elements. The elements are polarized in ei-ther of two opposite directions with voltage pulses by using transmis-sion gates. They are polarized in a manner analogous to that in which agating transistor transfers charge on the gate of a sense transistor indynamic random access memory (RAM). The element is illuminated (illumi-nation is from a low-intensity steady source), and a photo-emf positiveor negative (depending on the direction of polarization in the element)develops across the element. This emf is in series with the gate of afield-effect transistor (FET) (sense transistor) associated with eachelement. The result is either of two voltage levels on the transistorgate (gate biases). These levels produce in the transistor drain-sourcechannels either an "on" (high-conductivity state) or an "off" (low-conductivity state). Once the direction of remanent polarization withinan element is switched (reversed), a particular polarity steady photo-emf results, and the transistor is in one of its two possible conductionstates. The transistor remains in that state until the direction isswitched again. Removing the illumination at any point results in atemporary loss of the controlling photo-emf. Restoring the illuminationrestores the original emf and transistor conduction state. Memory isretained in a completely unpowered, unilluminated state.

In this photovoltaic ferroelectric-semiconductor memory, the elec-trode on a ferroelectric element can be connected with a conductor tothe gate metalization of a conventional FET. The approach is distinct

*See Selected Bibliography, Photovol taic Phenomenon.

tSee Selected Bibliography, Storage and Retrieval.

5

MKOMMh) AM 5LAa-N4 iIUM

from that in which ferroelectrics interrace directly with semiconduc-torsi with conduction in the semiconductor modulated by a depolarizationfield from the ceramic. This is the so-called ferroelectric field ef-fect. Ferroelectric field effect devices require no illumination tofunction. However, it is a characteristic of such devices that the con-ductivity change in the semiconductor decays with time,1 limiting stor-age times to durations as short as several hours. The photovoltaicdevices, on the other hand, appear to be truly nonvolatile. The non-volatility results from an unchanging (with time) relation between theremanent polarization and photo-emf and the fact that, except for asmall initial aging, the remanent polarization in ceramics is stable.

Proposed in this paper are memory cell structures that function inmatrix arrangements as nonvolatile read/write RAM or electrically alter-able programmable read only memory (EAPROM) devices. Test results ob-tained with an experimental test unit are described. These resultsdemonstrate how the memory functions, provide experimentally determinedread/write times, and show that stored information is retained. The in-tent is to eventually make devices that are integrated onto a siliconsubstrate, with the required ferroelectric elements produced by proc-essing compatible with silicon technology. For this reason, included inthis paper is a survey of the current status of processes for producingferroelectric films. Also in this paper, the memory characteristic of apresently available silicon nonvolatile memory of the charge storagetype is compared with that predicted on the basis of the experimentalresults for a functionally similar photovoltaic ferroelectric-semiconductor device.

2. MEMORY CELL

The ferroelectric element within each matrix cell is a two-terminalcapacitive structure with metal electrodes. In the test device, theelements were planar structures produced by depositing thin film elec-trodes onto a ceramic substrate (fig. 1). A voltage pulse applied tothe electrodes results in a fringing field within the substrate; thefield polarizes the region between the electodes in either of two direc-tions. In the presence of illumination, a photo-emf is developed acrossthe electrodes. In the nomenclature of photoconductivity, such a con-figuration is called transverse. In a longitudinal structure, the rema-nent polarization is perpendicular to the surface of the substrate andthe photo-emf is developed by illumination through a transparent elec-trode. In principle, such a structure also could be used.

A proposed read/write cell is shown in figure 2. One electrode ofthe ferroelectric element, F, is connected directly to the gate of ann-channel enhancement insulating gate field-effect transistor (IGFET),

ID. C. Burtoot and G. W. Taylor, Polar Dielectrics and Their Applica-tions, University of California Press, Los Angeles (1979), 351.

6

which is the sense transistor, Q1. Two parallel back-biased diodes, D,and D2, connect these to a common return. To write into a cell, a posi-tive or negative write data pulse is applied to the input at transmis-sion gate Q2 (column select) coincident with a write select signal (rowselect) to the control inputs of the transmission gate. The diode char-acteristics result in a high impedance for the small photo-emf shiftedgate biases, which have values of several volts or less, but a lowimpedance for the larger amplitude voltage pulses applied with thetransmission gate. As a result of this reduced impedance, voltages inexcess of the coercive field appear across the ferroelectric elementsand switch the direction of the remanent polarization. If the remanentpolarization is initially directed away from the gate of Q1, a negativewrite pulse switches the direction toward the gate. Since the memoryelement is illuminated, a spontaneous photocurrent flows, and a positivevoltage (photo-emf) appears across the element. The direct current (dc)impedance of the illuminated ferroelectric element is considerably lessthan the gate to ground impedance so that the element photo-emf causesthe gate bias initially set at the threshold for conduction, V, toincrease in magnitude. The result of this is a low-resistance statedrain-source channel in transistor Q1.

WUIBAITA VA MATA JLJJLr

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Figure 1. Planar structure ferro- Figure 2. Proposed read/writeelectric memory element as used in RAM cell: diodes D1 and Dtest device: (a) view from top and are back biased; V is set at(b) cross section showi g fringing gfield and i1lumix*' w f gate threshold for conduction.

Under these conditions, only a small fraction of an input read datapulse (column select) applied through the read select transistor, Q3, bya read select pulse (row select) appears at the sense output. Theselow-level signals constitute a logic 0 output. In a similar fashion, a

7

positive pulse writes a loqic I by switching the element remanent polar-ization that is initially directed toward the gate of Q, so that it isdirected away from the gate. Illumination produces a negative photo-emf, which reduces the gate bias to a value below the threshold forconduction in the drain-source channel. The channel is then in a high-resistance state, and a major portion of a read data pulse appliedthrough Q3 with a read select pulse appears at the sense output. Thishigh-level signal constitutes a logic 1 output. Thus, a positive writedata signal writes and states a logic 1; a negative write data signal, alogic 0.

In principle, other similar configurations could accomplish thefunctions of the configuration shown in figure 2. For example, ap-channel sense transistor could be used with a positive write pulseproducing a logic 0 read output. Another possible arrangement would usea junction field-effect transistor (JFET) rather than an IGFET for thesense transistor, Q1.

Diodes D, and D2 (fig. 1) in principle can be replaced by a singlediffused junction or single breakdown diode, which would conduct in thebreakdown mode for one of the write polarities. The input diode of theJFET could be used in this manner.

The RAM cell (fig. 2) can be read immediately after write. A chargeis generated by a write pulse on the gate of Q, by voltage divisionbetween the (parasitic) element capacitance and the gate capacitance.The charge is equal approximately to CV Bi or Cg C.2 where C is thegate to ground capacitance and V I and VB2 are the diode biases. Thischarge decays through the diode back resistances until the voltage atgate equals the photo-emf shifted bias voltage. The gate voltage neverdecays below the memory bias voltage, provided that an adequate photo-current flows. The effect is to allow a logic 1 or 0 to be read immedi-ately after write.

This read/write cell uses a transmission gate within each cell. Thedevice can function as an EAPROM device with block programming as well

as a read/write RAM. In general, an EAPROM device would not require thesame degree of cell isolation as a RAM. A proposed arrangement mini-mizes the number of transistors in a matrix cell and would function asan EAPROM device (fig. 3). Application of a voltage pulse to the writedata line while simultaneously grounding the read/write select resultsin an induced remanent polarization in an "erased" illuminated ferro-electric element, F. The polarized element produces a photo-emf thatbiases the gate of the normally on FET to cut off and then results in ahigh-level logic I output. Row select for read is accomplished bygrounding the read/write select. The read data pulse input column isthe selected column.

8

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Fiur 3.U EAPRO celart

O data are applied to "erased"

NEW VFSELECT ferroelectr ic element.

3. TEST DEVICE AND EXPERIMENTAL RESULTS

The test device shown in figure 4 is used to determine characteris-tics that can be expected from the proposed memory cell shown in figure2. The write (switching) pulses in the test device are obtained from aninstrumentation pulse generator. These could be varied in magnitude,duration, and polarity. The semiconductor components are two low-reverse-current diode pairs and an n-channel enhancement IGFET (sensetransistor). The two diodes in series extend the experimental voltagerange for switching pulses by increasing the minimum voltage for break-down. The IGFET is an individually packaged n-channel enhancementdevice. The ferroelectric element (fig. 1) consisted of metalizations10 pm wide and 1750 pm long, separated by a 13-pm gap, on the polishedsurface of a ceramic plate. The ceramic is a polycrystalline solidsolution, which is 53 mole percent lead zirconate and 47 mole percentlead titanate, with a I weight percent additive of niobium pentoxide.It is usually designated by the acronym PZT-5A.

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Figure 4. Circuit for test device.

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Photovoltages were generated with a uniform flux of broadband ultra-violet illumination distributed about a 325-nm peak. The illuminationwas produced with a mercury arc filtered successively by a water filterand a CS-7-54 silica glass filter. The illumination could be reduced inintensity over a considerable range by the interposing of fine wiremesh, which served as neutral density filters. The read outputs weredisplayed on an oscilloscope. A unity gain operational amplifier servedas a sense output amplifier. The read data signals were 200-ns, 10-Vpulses.

The test device functions in essence as does the proposed cell shownin figure 2. A positive write pulse writes a logic 1, which is read outas high-level (200-ns) output pulses; a negative write pulse writes alogic 0, which is read out as low-level (200-ns) output pulses. Theferroelectric element photo-emf was monitored with an in-situ electrom-eter amplifier used with a strip chart recorder. The experimentalresults were obtained with the sense transistor gate biased at itsthreshold--about 3.5 V. Diode biases VB1 and VB2 were respectively -6and +6 V.

In figure 5, the element photo-emf is shown as a function of thenumber of successive 11-ps, 140-V pulses of a particular polarityapplied to the test circuit. The photovoltages were measured about 10min after the application of a pulse. Each pulse altered the element

remanent polarization.

3..

9.14

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Figure 5. Photoelectromotive forces pro-

duced by successive 11-Ms, 140-V pulseswith polarity switched after 4th, 8th,12th, and 16th pulses.

10

The initial state was saturation state produced with several hundredpositive pulses. This saturation resulted in a photovoltage of -1 V. Afirst negative pulse switched the direction of remanent polarization,resulting in a photo-emf across the element of 0.38 V. This is the

point indicated by the numeral I in figure 5. Additional successivenegative pulses (pulses indicated by 2, 3, and 4 in fig. 5) increasedthe element photo-emf until a photo-emf of 0.6 V appeared across theilluminated element. A fifth pulse of reverse polarity (positive pulse)then switched the direction of the remanent polarization, resulting ina negative photo-emf indicated by the number 5 in figure 5. Additionalpositive pulses were applied. Each time, the magnitude of the negativephoto-emf increased. After the seventh (positive) pulse, the pulsepolarity was reversed again, resulting in a positive photo-emf, the sameas that produced by the first pulse, as is indicated in figure 5.Additional negative pulses resulted in increased photo-emf's until a13th pulse (of positive polarity) again reversed the remanent polariza-

tion and photo-emf; additional positive pulses were produced and photo-emf's were measured until a final test pulse, pulse 16. The photo-emfresulting from pulse 16 was the same as that resulting from pulse 8.

The results of the two cycles coincided. The results show that forthe 11-ps, 140-V pulse, a single switching pulse reverses the polarityof the photo-emf irrespective of the number of pulses of the oppositepolarity that preceded it. With the gate bias set at the FET threshold,a combination of element and transistor would function thus in effect(assuming an abrupt turn on voltage) in a saturation mode.

Shorter pulses change the photo-emf, although then a single pulsecannot quite reverse the polarity of the element photo-emf. The resultsin figure 6 are for 150-ns, 140-V pulses and the same ferroelectricelement. There are 70 pulses in each half cycle. The implication ofthese results is that short pulses could be used to program a blockerasable device of the type shown in figure 3, but would not be assuitable as for a true RAM.

I

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15 s 1

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i, Figure 6. Photoelectromotive

I forces produced by successive

- 150-ns, 140-V pulses.:4gu1

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The element photo-emf was measured as a function of illuminationintensity for a given remanent polarization state (fig. 7). The photo-emf saturated at about I mW/cm2 . Short-circuit current was measured asa function of illuminated intensity by measuring the voltage developedacross a shunting resistor (108 ) placed across the ferroelectricelement (fig. 8).

is.

IIs-

Figure 7. Photoelectromotive forces asfunction of illumination intensity.

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2 4 6 O I s It 14,UY (mvm

Figure 8. Short-circuit current (zero apppliedfield) as function of illumination intensity.

12

The repeated rapid switching of a ferroelectric element could besustained without detrimentally affecting the memory characteristic. inan experiment, an element was subjected to a series of alternatingpolarity, 200-ns pulses. The alternating polarity pulses immediatelyfollowing each other formed pulse pairs, with a 500-kHz repetitionrate. This pulse train could be applied for hours (1.8 x 109switchings/hr) without affecting the element's memory characteristics.The element photo-emf after terminating a pulse train depended only onthe polarity of the final pulse. Thus, no fatigue factor was observedafter many storage cycles. The current required for switching wasmeasured with a current probe. The value was approximately 4 mA.

Decay of the element photo-emf's (gate bias shifts) with time isshown in figure 9. The write pulses were 600 ns and 140 V. The decayof the photo-emf is initially logarithmic with time. The photo-emfdecreases with increasing time until a constant value is reached. Thisdecay characteristic is similar to that of the electromechanical cou-pling coefficient, 2 which is (as is the photo-emf) proportional to theremanent polarization. Therefore, the decay of photo-emf can be attrib-uted to the aging characteristic of the magnitude of remanent polariza-tion in a ceramic.

4

TIME AFTER SWUG (H

-0.4

Figure 9. Time history of element photoelec-tromotive forces: at 100 hr, photoelectro-motive force was reversed with switching pulse.

The read output levels are essentially the same at 0.5 and 100 hr.The read outputs are shown in figure 10. The positive bias at the gatephoto-emf produced a logic 0; the negative bias at the gate photo-emfproduced a logic 1. The time dependencies were obtained under condi-tions of intermittent illumination. Results under conditions of contin-uous illumination were similar. It was observed also that the absenceor the presence of illumination on a ferroelectric element duringswitching did not affect in any significant way the pulse voltages orthe duration needed for switching.

2B. Jaffe, W. R. Cook, Jr., and H. Jaffe, Piezoelectric Ceramics,Academic Press, New York (1971), 83.

13

0.5 HR 0.5 HR

Figure 10. Logic 1 and logic 0

at 0.5 and 100 hr: scale is2 Us and 5 V per division.

100 HR 100 HR

These results show the essential feasibility of electronic memorybased on the anomalous photovoltaic effect in the ceramics. The volt-ages required to write can be reduced by reducing the planar electrodespacing to increase the switching field. Photo-emf's produced with agiven electrode spacing can be increased by using finer grain ceram-ics. 3 Also, reduced coercive fields for switching and increased photo-emf are found in PLZT ceramics. Material of 7/65/35 PLZT has a coercivefield of about 14 kV/cm as compared with about 30 kV/cm for the PZT-5Aused for the test element. The saturation photo-emf per unit length for7/65/35 PLZT material of 2- to 4-Um grain size is somewhat larger thanthat of the PZT-5A producing 1500 V/cm rather than 600 V/cm characteris-tic of the PZT-5A material used.

4. FERROELECTRIC CERAMIC FILMS

.n the test ferroelectric memory element, the photocurrent is gener-ated in a strongly absorbing region within several micrometers of thesurface if, as in the test of section 3, the illumination wavelength isshorter than that of the absorption edge. Consider also that polariza-tion reversal is by way of the fringing field. The electrode separationis only 13 Vm; as a result, the depth below the surface within which thepolarization switches is only several micrometers. The active region ofthe ferroelectric is thus only a few micrometers thick. Therefore, itseems reasonable that a functional memory element with planar electrodesas in the test device could be fabricated as a film on a supportingsubstrate. The requirements for such a film are that it be polycrystal-line, insulating, and characterized by a remanent polarization and coer-cive field similar to that of bulk material. Such a film could beexpected to produce the anomalous photovoltages characteristic of thebulk ceramic material.

3philip S. Brody and Frank Crowne, J. Electron. Mater., 4 (1975),955.

14

Films of insulating ferroelectric ceramic material have been pr -duced by a variety of methods and on a number of different substratts.However, there have been no investigations of photovoltaic propertiis.Oikawa and Toda 4 fabricated thick (20-vm)' P=T films on fused quartz andstainless steel substrates by electron beam evaporation. The depositionrates were high (0.5 m/mn). Low-frequency Sawyer-Tower loops showed asaturation remanent polarization of 4.2 wC/cm2 . This value should becompared with the remanent polarization of the bulk ceramic startingmaterial, w:ich was 30 VC/cm2 . The film material showed a strcngdielectric anomaly at the Curie temperature. The coercive field fromthe Sawyer-Tower measurements was 5.5 kV/cm2 . The ferroelectr icproperties developed only after annealing at 6500C for several hours.

Schufer et al5 prepared thin films of barium titanate by radiofrequency (rf) sputtering on ceramic superstrates partially coated withplatinum. Films 4 um thick with grain size of 0.2 to 0.4 um were pro-duced. The films were annealed at 9000C for several hours. Sawyer-Tower circuit measurements of remanent polarization yielded 3 to 6ijC/cm2; 6 UC/cm2 is a low typical value for the bulk ceramic material.The coercive field (Ec) was about 20 kV/cm 2 .

Ishida et a16 succeeded in rf sputtering ferroelectric PLZT filmsonto tin oxide coated quartz substrates. The remanent polarizationmeasured by the Sawyer-Tower hysteresis loop method was 4.2 JC/cm 2 withEc about 20 kV/cm. These quantities are not well defined because of thesoftness of the observed loop. The films were 1 iAm thick with a grainsize of 0.2 m.

Films of less than 0.1 pm were sputtered into silicon substrate byPark and Granneman. 7 The relatively low dielectric constants of thesefilms (approximately 30) suggest that they may not be ferroelectric.The barium titanate-silicon system has been further characterized byPanitz and Hu.8

Polycrystalline ferroelectric PZT-5A films with remanent polariza-tion of. about 4 ijC/cm2 were produced by Constelleno and Feinstein, whoused a sputtering technique in which a collimated ion beam, rather thanglow discharge ions, effected the deposition of PZT-5A target material

4Masaru Oikawa and Kohji Toda, Appl. Phys. Lett., 29 (1976), 491.5H. Schufer, H. Schmitt, K. H. Ehses, and G. Kleer, Ferroelectrics,

22 (1978), 779.- 6MIalcoto Ishida, Hiroyuki Matsunami, and Tetsuro Tamaka, App1. Phys.Lett., 31 (1977), 433.

7J. K. Park and W. Grannemann, Ferroelectrics, 10 (1976), 217.8 junda K. G. Panitz and Cheng-Cheng Ru, Ferroe lectrics, 27 (1980),

161.

15

i. ... a

onto a substrate. 9 The deposited material was annealed at about 800*Cfor several hours to produce active films with macroscopic (0.5-rm)

grains.

Ferroelectric barium titanate thick films have been produced by

annealing layers of deposited powder. Deposition has been by screen

printing and electrophoresis. 10 - 13 As with other methods of deposition,

annealing is required14 to produce polycrystalline (micrometer or sub-

micrometer grain size) layers from the deposited materials.

These efforts represent the various techniques that have been used

to obtain thin and thick polycrystalline films of barium titanate, PZT,

and PLZT materials. Other ferroelectric materials have been prepared in

film form. One example is bismuth titanate prepared in semicrystalline

form on a silicon substrate by Wu.14

5. COMPARISON WITH EAPROM DEVICE

The potential (speed and permanence) of photovoltaic ferroelectric-semiconductor devices can be seen by comparing the predicted character-istics of a photovoltaic ferroelectric programmable device (fig. 3) witha commercially available word alterable EAPROM device of the charge

storage type. One such typical device is organized in 1024 four-bitwords. A special erase operation erases one or all words simultaneouslyin 10 ms. Writing then requires I ms/word. Block programming a unittherefore requires a time interval in excess of I s. Subsequentlyerasing and reprogramming a single word requires 11 ms.

The photovoltaic ferroelectric-semiconductor EAPROM device (fig. 3)

would require a block erase time of about 10 Us. Block programmingcould be accomplished in as little as 100 ns/cell. In a unit organized

similarly to the ER3400, the block programming would require about 100

Us rather than 1 s. Erasing and reprogramming a single word would take10 Us rather than 10 ms.

Retentivity (unpowered) of the ER3400 is limited to 10 yr at room

temperature. Typically, slight elevation in storage temperature reduces

R. N. Castelleno and L. G. Feinstein, J. Appl. Phys., 50 (1979),4406.

"OVernon Lamb and Harry I. Salmon, Ceramic Bull., 41 (1962), 781.I1J. Dec and Z. Surowiak, Phys. Papers, Silesian University, Katowice,

6 (1978), 74.-|2Z. Surowiak, Acta Phys. Pol., 43 (1980), 543.

13M. Loposzko and Z. Surowiak, Thin Solid Films, 67 (1980), 253.14S. Y. Wu, IEEE Trans. Electron. Dev., ED-21 (1974), 499.

16

markedly the unpowered storage time. The ferroelectric device is ex-pected to store information for an indefinitely long time even at eleva-ted temperatures.

The information content of the commercial charge storage ER3400 canbe expected to be removed by a burst of penetrating ionizing radia-tion. This is not expected for the ferroelectric devices in which theinformation is stored in remanent polarization. This storage mechanismis insensitive to radiation.

1

The data sheet of the ER3400 gives a maximum of 100,000 forerase/write cycles. The test da'l for the ferroelectric test cell, onthe other hand, show proper operation after 1.8 x 109 write/rewritecycles.

Most importantly, no interaction appears between read cycles andstored information in the ferroelectric device. Once programmed, a cellcan be accessed at any rate consistent with the 200-ns read time usedfor the test device and for any length of time without removing theprogrammed information. There is no read limitation. The ER3400 has aread limitation of about 2 x 1011 read cycles.

ID. C. Burtoot and G. W. Taylor, Polar Dielectrics and Their Applica-tions, University of California Press, Los Angeles (1979), 299.

17

LITERATURE CITED

(1) D. C. Burtoot and G. W. Taylor, Polar Dielectrics and Their Appli-cations, University of California Press, Los Angeles (1979).

(2) B. Jaffe, W. R. Cook, Jr., and H. Jaffe, Piezoelectric Ceramics,Academic Press, New York (1971), 83.

(3) Philip S. Brody and Frank Crowne, J. Electron. Mater., 4 (1975),955.

(4) Masaru Oikawa and Kohji Toda, Appl. Phys. Lett., 29 (1976), 491.

(5) H. Schufer, H. Schmitt, K. H. Ehses, and G. Kleer, Ferroelectrics,22 (1978), 779.

(6) Malcoto Ishida, Hiroyuki Matsunami, and Tetsuro Tamaka, Appl.Phys. Lett., 31 (1977), 433.

(7) J. K. Park and W. Grannemann, Ferroelectrics, 10 (1976), 217.

(8) Junda K. G. Panitz and Cheng-Cheng Hu, Ferroelectrics, 27 (1980),161.

(9) R. N. Castelleno and L. G. Feinstein, J. Appl. Phys., 50 (1979),4406.

(10) Vernon Lamb and Harry I. Salmon, Ceramic Bull., 41 (1962), 781.

(11) J. Dec and Z. Surowiak, Phys. Papers, Silesian University,Katowice, 6 (1978), 74.

(12) Z. Surowiak, Acta Phys. Pol., 43 (1980), 543.

(13) M. Loposzko and Z. Surowiak, Thin Solid Films, 67 (1980), 253.

(14) S. Y. Wu, IEEE Trans. Electron. Dev., ED-21 (1974), 499.

18

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Storage and Retrieval

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Brody, Philip S., Ferroelectrics, 27 (1980), 137.

Brody, Philip S., U.S. Patent 3,855,004 (17 December 1974).

Brody, Philip S., U.S. Patent 4,051,465 (27 September 1977).

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(1976), 379.

19

A e1

DISTRIBUTION

ADMINISTRATOR BROOEHAVEN COM4ANDERDEFENSE TECHNICAL INFOMATION CENTER DoPT OF ENERGY US AMY AVIONICS RES & DEV ACTIVITYATTN DTIC-DDA (12 COPIES) ASSOCIATED UNIVERSITIES, rNC ATTN DAVAA-I, AVIATION ELECTRONICSCAMERON STATION, BUIDLING 5 ATTN PHYSICS DEPT, 5103 INTEGRATION DIVALEXANDRIA, VA 22314 UPTON, LONG ISLAND, NY 11973 ATTN DAVAA-E, COMMUNICATIONS &

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21

-ownM .IW

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COMANDER NAVAL WEAPONS CTR DIRECTORUS AMY INTELLIGENCE AND SEC COMMAND CODE 3522 AF OFFICE Or SCIENTIFIC RESEARCHATTN TECN LIBRARY ATTN K. STICKEL, RE BOLLING APBARLINGTON HALL STATION CHINA LAKE, CA 93555 ATTN ME, DIR OF ELECTRONIC &4000 ARLINGTON BLVD SOLID STATE SCIARLINGTON, VA 22212 NAVAL AVIONICS CTR WASHINGTON, DC 20332

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DIV ATTN J. D. MERRITT, BE HAMPTON, VA 23665ATTN DRXRO-EG, DIR ENGINEERING DIV ARNOLD ArS, TN 37389RESEARCH TRIANGLE PARK, NC 27709 DIRECTOR

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ATTN LEt, DEPUTY FOR ELECTRONIC TECHGRI'FISS Ar, NY 13441

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AAIR INC APPLIED RES LABS EAD BENDIX CORPRTR 4, BOX 63 9 PO BOX 8029 P0 BOX 1159ATTN N. MEDLIN, PRES ATTN K. BUTLER ATTN J. T. GRINWOODQUINLAN, TX 75474 AUSTIN, TX 78712 KANSAS CITY, MO 69141

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COLUMBUS, OH 43201 HOLLYWOOD, FL 33020ALLIED CHEMICAL NRCPO BOX 1021 R BARRETT ELECT CORP BUTLER BANKS ENGINEERATTN D. M. GUALTIERI, PHYS 1262 WYANDOTTE ST BOX 97MORRISTOWN, NJ 07960 ATTN S. KASS ATTN D. M. BUTLER, PRES

MTN VIEW, CA 94043 ALDIE, VA 22001ALPHA IND INC20 SYLVAN RD BELL r HOWELL BUTLER NATIONALATTN C. A. LEVI, DRI DEV 360 N SIERRA MADRE VIL 8246 NEIMAN RDWOBURN, MA 01801 ATTN D. BERGER, ENG ATTN E. G. DAY, SR ENGR

PASADENA, CA 91109 LENEXA, KS 66214AMDAHL CORP1250 F. ARQUES BELL LABS CARDION ELECTRONICSATTN J. FOGGIATE, PRO MGR NAPERVL/WARRENVL RD LI EXPRESSWAYATTN L. JUB ATTN R. P. MCNAMARA, MTS ATTN W. D. TUSSUSOVSUNNYVALE, CA 94086 NAPERVILLE, IL 60540 WOODBURY, NY 11797

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APPLIED MATERIALS, INC BELL TELEPHONE LABORATORIES CASSIE ENGINEERING3050 BOWERS AVE 600 MOUNTAIN AVE PO BOX PFATTN W. C. REN ZING ATTN T. EGRAN ATTN P. P. NELSON, ENG 4GRSANTA CLARA, CA 95051 ATTN A. M. GLASS STATEN ISLAND, NY 10302

ATTN H. M. O'BRYANAPPLIED PHYSICS LAB ATTN J. M. GEARY CHANNEL PRODUCTS INCJOHNS HOPKINS ROAD ATTN P. C. MICHAELIS, MTS ATTN D. BERLINCOURTATTN J. WENIG MURRAY HILL, NJ 07974 CHAGRIN FALLS, OH 44022LAUREL, MD 20810

23

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CHILD INCORPORATED DATA ACQUISITION T C DOLAN SYSTEM DESIGNPO BOX 764 3799 SOTH 2235 E 1980 W EL NORftATTN M. FISCHBR, VP SYS ATTN E. G. YOUNG. ENGR T. C. DOLAN, SYSTEM MS5GLAWRENCE. FS 66044 SAlt LARS. UT 84109 ESCONDIDO, CA 92026

102 WYNN DR 4400 COMPUTER DRIVE 2385 S CLINTON AVENUE

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CITY DALLAS COMM SYS DATA GENERAL CORP DUE SERVICE CO3920 FOREST AVE BOX 297 P O BOX 485

ATTN W. B. BUNCH. ENG ATTN R. MOLNAR ATTN N. DUE, CqNER ENGR

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W. A. CLARK ASSOCIATES DATA G(ENRAL CORP DUNCAN ASSOC INCSU ARLOAF STAR ROUTE 4400 CCO4PUTER DR 17606 SAN MARIA

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COLLINS AVIONICS DATA PRODUCTS CORP DUPONT EXPERIMENTAL ETA400 COLLINS RD 6219 DE SOTO AVE BUILDING 334

ATT S. BOTOR?, 9NG ATTN Y WONG, ENGR ATTN R. A. GRUENKE, PECEDAR RAPIDS, IA 52406 WOODLAND RILLS, CA 91365 WILMINGTON, DE 19898

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309

C0M1I R SCIENCES CORP DELAWARE MICROSYSTEMS ROCHESTER. NY 146505 JJOF CLARKE RD 2535 DARTMOUTH WOODS RATTN D. E. POWERS. IM E1G ATTN W. S. PAGE, PRES EAT KENNAY

ATTN 0. BROWN, ENG WILMINGTON, DE 19810 36 % 8 go PO BOX 4250

MIDDLETOWN, RI 02840 ATTN C. A. BARNECK, SR EING

DELCO EZICTROHICS SALT LAKE CITY, 0r 84110

CONSULTANTS WEST 6767 NOLLISTER AVEto goX 9152 ATTN 0. Z. RUCH, DEV ENG EATON CORPATTN J. CONNOLLY, MUR GOLETA, CA 93017 26201 NORTHWESTERN HWYMARINA DEL REY, CA 90291 ATTN B. 3. LANE, ERG

DELPHI INSTRUMENTS SOUTNFIELO, MI 4R076

CONTROL DATA CORPORATION 12373 1ARRINGER ST40 HARTWELL AVENUE ATT" P. .OSS ENGR ESmATTN CHARLES BROWN, MICROBIT DIV SO IL MOTE, CA 91733 R 52ATT" J. R. MARS. MGR, LZXMIS ATTN P. G. GRESR, ADV ENGIEXINGTON, MA 02173 DELTA SYSTEMS NOPEWRLL JCTN, NY 12533

2129 BROAO AY AVE HE

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24500 INDUSTRIALCOULTER EZC7'RON cg INC ATTN W. R. PALLESCHI, COMP ENGR EET INC651 W 2ND ST HAYWARD, CA 94545 100 GLENN DRIVX

ATTN J. STOLII, TENG ATTN U. W. BLEVINS, ENGR1IIALEAh, PL 33011 DIESEL EQUIPMENT DIV STERLING, VA 22170

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s25 ANOVER STDALMO VICTOR ATTN . SoF'O E 1 A C1515 INDUSTRIAL NAY ATTN H. W. KEMPTON 1301 BROOKLYN AVE

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ATTN A. REIAA MONTEREY PARK. CA 91754BELMONT, CA 94002 DIGITAL %QUIP CORP

506 BENNETT ST ELECTRONICS LAB

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AT"N Ail GfloD, NORt HEW YORK. My1 10021

LOS OATSO, CA 95030

724

DISTRIBUTION (Cont' d) I

Zl/SZSCO FAIRCHILD CAMERA INST GENERAL ELECTRIC CO20630 PLUMMER STREET 300 ROBBINS LANE AP2-248

ATTH 0. WIENER, ENG ATTN R. TITCONB, ENGR ATTN R. M. DERBY, 1MGCHATSWORTN, CA 91311 ATTN 1. FRIEDMAN, ENG LOUISVILLE, KY 40299

SYOSSET, NY 11791ENVIROMENTAL DATA CORP GENERAL ELECTRIC COPO BOX 30 FAIRCHILD IND CT ST PLANT 5 R H4ATTN E. H. SHARIAN CENTURY BLVD ATTN H. E. PERRY, PRJ ENGRMONROVIA, CA 91016 ATTN H. R. AUSTIN, STF ENGR SYRACUSE, NY 13201

GESRANTOWN, MO 20767EOCOM CORP GENERAL RAILWAY SIGNAL15771 REDNILL AVENUE FAIRCHILD SEMICONDUCTOR 4747 IRVING BLVD SUITEATTN R. PRICHARD 464 ELLIS ST ATTN C. SCHNEIDER, ENGRTUSTIN, CA 92680 ATTN R. R. BACHIREDDY, SUP ENGR DALLAS, TX 76010

Mr VIEW, CA 94042E&P CONSULTANTS GILBARCO INC1015 SECOND ST FARINON ELECTRIC PO BOX 22087ATrN E. PENOYK, ENG 1691 BAYPORT ATTN J. J. RONCHETTI, SR EN.SANTA MONICA, CA 90403 ATTN R. ANDERSON, ENGR GREENSBORO, NC 27420

SAN CARLOS, CA 94070ERIE TECHNOLOGICAL PROD GLOBE-UNION INC1900 W COLLEGE AVE FEDERAL RESERVE RANK 5757 N GREEN BAY AVEATTN J. P. CANNER, RES ENG 600 ATLANTIC AVE T 26 ATTN G. GOODMAN, MGR RESSTATE COLLEGE, PA 16801 ATTN J. E. CHAMBERLAIN MILWAUKEE, WI 53201

BOSTON, MA 02106E SYSTEMS GSA INCPo BOX 1056 FEDERAL RESERVE RANK 23650 RESEARCH DRATTN D. J. POUNDS PO DRAWER 20 ATTN E. J. MARCINKIEWICT ENG %GRRGREENVILLE, TX 75401 ATTN L. G. SMITH, MGR ENG ATTN C. T. CLARK, MICRO ENG

CULPEPER, VA 22701 FARMINGTON HILLS, MI 49024E SYSTEMSPO BOX 226118 FIDELITY ELECTRONICS GRUMMAN AERO CORPATTN R. G. HORTON, SYS XE 8800 NW 36 ST BOX 42232DALLAS, TX 75266 ATTN M. L. NEiMER ATTN A. TKACZ, DES ENGR

MIAMI, FL 33178 Pr MUGU, CA 93030ESSEX1510 WALL STREET FISCHER & PORTER C GRUMMAN AERO CORP

ATTN A. SCHILLER, PJT ENG COUNTY LINE ROAD 88 CITO STPr WAYNE, IN 46804 ATTN A. LEGER, SR ENGR ATTN H. MENDELSOHN, GRP HD

WARMINSTER, PA 18974 HUNTINGTON, NY 11743E&U ENGEL CONSULTINGf7t9 SO CAMELINA AVE FORD AEROSPACE GULTON INDUSTIRES, INC.ATTN E. N. ENGEL, EE 2880 E FOUNTAIN BLVD ATTN JOSEPH P. DOUGHERTY10S ANGELES, CA 90025 ATTN D. L. COLLINS, ENG METOCHEN, NJ 08840

COLD SPGS, CO 80910EXECUTORE INC HAMILTON STANDARD29-10 THOMSON AVE FORD AERO & CC WDL MS IA-2-5 BLADLEY RDAT1N A. RAMSARAN, SHR ENGR 3939 FARIAN WAY ATTN T. A'IYEN, EzoEsGLONG ISL CITY, NY 11101 ATTN P. G. FOSTER, RNGR WINDSOR LOCKS, CT 06096

PALO ALTO, CA 94303EXPLORATION LOGING HAMILTON STANDARDP 0 BOX 214676 FORD MOTOR CO HAMILTON RDATTN M. JAMISON 19350 MILBURN ATTN J. S. STEFFENS, ENGSACRAMENTO, CA 95821 ATTN R. DIPAOLO, ENG WINDSOR LOCKS, CT 06096

LIVONIA, MI 48152EXPLORATORIUM HARRIS CORP3601 LYON ST GENERAL DYNAMICS PO BOX 4290ATTN L. SHAW, DES P 0 BOX 748 MS 2440 T CHRAPxIrWICz, nE ERGSAN FRANCISCO, CA 94123 ATTN T. 0. SAVAGE QUINCY, IL 62301

FORT WORTH, TX 76101

EXXON INFOR4 SYS HARRIS CORPORATION101 GORDON DR GEN DYNAMICS/CONVAIR 1200 PROSPECT AVEATTIN 0. F. TROYANO, NOR PO BOX 80847 ATTN T. P. NCNULTY, JR., ENGLIONVILLE, PA 19353 ATTN A. J. CZAK, ENG SPC WESTBURY, NY 11590

SAN DIEGO, CA 92138PAA HARRIS (ESD2300 E DEVON G K BLDG 3-220 PO BOXATTR ". C. DOsCNER, E ELECTRONICS PARK ATTN T. WORMINTONDUS PLAINES, IL 60018 ATTN M. EGTVEDP, ENG MELBOURNE, FL 32905

SYRACUSE, MY 13221

- - . 5

DISTRIBUTION (Cont'd)

HARRIS SEMICONDUCTOR HONEYWELL INC. IBM CORP SCDBOX 883 PO BOX 583 BOX 34729ATTN D. R. WILLIAMS ATTN J. A. KACHMAR, FLO ENG ATTN J. M. PINTER, ADV ENGRMELBOURNE, FL 32901 ROBINS AFB, GA 31098 CHARLOTTE, NC 28212

HAZEurINE CORP HONEYWELL INC IBM GSDCUBA HILL ROAD 1625 ZARTHAN MN 3605 8GWY 52ATTN M. WEINER, SEN ENGR ATTN J. E. OVERLAND, DEV EN ATTN J. 9. GUEST, PRJ ENGATTN A. J. AXEL, SPVR ST LOUIS PK, MN 55416 ROCHESTER, MN 55901GREENLAWN, NY 11740

HONEYWELL TEST INST DIV IBM GEN PROD DIVHEWLETT-PACKARD BOX 5227 005/68PPO BOX 39 ATTN T. R. BIGNELL, ENG MGR ATTN C. E. BAILEYATTN A. T. BROWN, ENG DENVER, CO 80217 TUCSON, AZ 85744BOISE, ID 83707

HUGHES AIRCRAFT IMIPOLEXHEWLETT-PACKARD BOX 3310 100 MARKET ST APT 13404 EAST HARMONY RD2U ATTN J. M. KIRSCH, MTS ATTN R. SCHAEFERATTN L. W. JAMES, MTS FULLERTON, CA 92633 POTSDAM, NY 13676FORT COLLINS, CO 80525

HUGHES AIRCRAFT CO IMMCOHEWLETT-PACKARD CO PO BOX 6852 449 S EAST ST POB 6334PO BOX 301 ATTN G. SHREVE, MIS ATTN D. SIMKINS, GEN MGRATTN R. A. SNYDER, ERG TORRANCE, CA 90504 ANAHEIM, CA 02806LOVELAND, CO 80537

IBM IND SOLID STATE CONTROLSHEWLETT-PACKARD OLD ORCHARD ROAD 435 W PHILA PO BOX 93419447 PRUNERID(E AVE ATTN K. M. TRAMPEL, PTA MGR ATTN R. L. LIGHT, ENGATTN J. C. DELANEY, MIS ARMONK, NY 10504 YORK, PA 17405CUPERTINO, CA 95014

IBM INTEL CORPHEWLETT-PACKARD 18100 FREDERICK PK 3065 BOWERS AVE11000 WOLFE RD ATTN D. A. RICHARD, ENGR ATTN A. STIVER, ENGRATTN R. BYARD, R&D ENG GAITHERSBURG, MD 20760 SANTA CLARA, CA 95051CUPERTINO, CA 95014

IBM INTERNATIONAL LASER YSHOFFMAN ASSOCIATES 740 NEW CIRCLE RD 3404 N ORANGE BLOSSOMPO BOX 22010 ATTN R. M. WOOTON, ENG ATTN J. R. ANDERSON, STF ENGRATTN H. HOFFMAN LEXINGTON, KY 40511 ORLANDO, FL 32804SAN DIEGO, CA 92122

IBM ITHACA INTERSYSTEMSD K HOKANSON INC HWY "" 2F8 1650 HENSHAW RD2450 NEWPORT WAY SE ATTN A. GOLDSTEIN ATTN S. FINNEY, DESENGATTN E. HOKANSON, PRES ROCHESTER, MN 55901 ITHACA, NY 14850ISSAQUAN, WA 98027

IBM INTL INST FOR ROBOTrICSHONFANTO (O 1001 HARRIS BLVD BOX 61532 WATEC ST ATTN H. R. LEWIS, ENGR ATTN 0. COWSERT, DIRATTN A. FISTILLA, DES ENGR CHARLOTTE, NC 28257 PELAHATCHIE, MS 39145STONINGTON, CT 06378

IBM CORP INTL TEL & TEL OCOHONEYWELL 5600 COTTLE RD 492 RIVER RD2600 RImWAY PKWY ATTN P. S. WIEDMER, SR ENGR ATTN J. CARMODY, mTSATTN S. CALLAGHAN SAN JOSE, CA 95193 NryTLEY, NJ 07110MINNEAPOLIS, MN 55413

INM IrTHONEYWELL DEPT G9L 8610 2 2804-204 AVENT FERRY2 FORBES RD ATTN H. ROSS, ADV ENG ATTN C. MELSONATTN D. LEES, ENG ESSEX JCT, VT 05452 RALEIGH, NC 27606LEXINGTON, MA 02173

IBM ITT COURIERHONEYWELL CERAMICS CENTER BOX A NS 972 2 1515 W 14TH STATTN JOSEPH KOYONKA ATTN C. J. DANIELSKI, ADV RNG ATTN M. KALIOR, SYS ENGRGOLDEN VALLEY, MN 55422 ESSEX JCT, VT 09452 TEMPE, A7 65281

HONEYWELL CORPORATE MATERIAL IBM CORP F58 026 ITT RESEARCH INSTITUTESCIENCE CENTER 5600 COTTLE RD 10 W 35TH STREET10701 LYNDALZ AVE ATTN M. H. PARKER, ENGR ATTN J. N. 4C INTYRE, EnIATTN S. T. LIU ATTN M. SCHOR, MGR CHICAGO, IL 60616BLOOMINGTON, MN 55420 SAN JOSE, CA 95193

26

DISTRIBUTION (Cont'd)

ITW CORTRON LITTON MC ASSOCIATES400 W GRAND AVE 5500 CANOGA 8 RICHARD ROADATTN K. CONROY, UES ENG ATTN J. R. HUDDLE ATTN D. COSCIAELMHURST, IL 60126 WOODLAND HILLS, CA 91364 WAYLAND, MA 01778

JOHNS HOPKINS APL LITTON SYS MCAIR ENG REB AT CONRACJOHNS HOPKINS RD 8000 WOODTEY AVE 32 FAIRFIELD PLATTN S. D. COX, ENGR ATTH S. J. STERNBACH ATN R D NEWTONATTN G. D. WAGNER, ENGR ATTN J. A. KACKA, 4GR W CALDWELL, NJ 07006LAUREL, MD 20810 VAN NUYS, CA 91409

MCDONNELL nOUGLAS ASTROJOHNSON CONTROLS INC LAWRENCE LIVERMORE LAB 5301 BOLSA MS22 3507 E MICHIGAN ST Po BOX 808 ATTN A. SOLOMONATTN L. STROJNY ATTN G. L. JOHNSON, RES ENG ATTN Y. M. EDEN, ENGMILWAUKEE, WI 53201 LIVERMORE, CA 94550 HUNTINGTON BCH, CA 92647

JOVIAN SYS E DIV LOCKHEED AIRCRAFT SERVICE MEASUREX

11238 CHERRY HILL PO BOX 33 1 RESULTS WAYATTN A. F. SILL, MGR ATTN G. HESS ATTN M. SHEETSBELTSVILLE, MD 20705 ONTARIO, CA 91761 CUPERTINO, CA 95014

JULIE RESEARCH LABS LOCKHEED MISS & SPACE MERRILL ENG LAB211 W 61ST STREET ORG 52-12 BLDG 151 239050 TEJON

ATTN L. JULIE, PRES ATTN L. DAVIS, SR STF ENGR ATTN L. H. ERICKSON, ENGNEW YORK, NY 10023 SUNNYVALE, CA 94088 ENGLEWOOD, CO 80110

KAAL TV LOG ETRONICS INC MICRODATA1701 10TH PLACE NE 7001 LOISDAIE RD PO BOX 19501

ATTN J. F. JONES, VP ENG ATTN W. MCINTOSH, SR EE ATTN R. DOCKAL, ENGRAUSTIN, 1N 55912 SPRINGFIELD, VA 22150 IRVINE, CA 92664

KAISER MED METHODS LORLIN INDUSTRIES MICROFILM SERV CRP3700 BROADWAY 1233 MIDAS WAY 3007 P WEST TEMPLE STEATTN C. BEVAN, ENGR ATTN E. R. HUATEK, MFG MGR ATTN C. E. RHOADES

OAKLAND, CA 94611 SUNNYVALE, CA 94086 SALT LAKE CITY, UT 84115

KASPER INSTRUMENTS LSE CORP MICROVATION

935 BENICIA 6 GILL ST 8645 COMMERCE AVENUEATTN D. SLASINSKI, SR ENG ATTN N. DOWLING, RE ATTN G. P. BENJAMIN, PRESSUNNYVALE, CA 94086 WOBURN, MA 01801 SAN DIEGO, CA 92121

KEITHLEY INSTRUMENTS LUCrPRON INC mIL+POPE CORP28775 AURORA RD 1918 RAYMOND DRIVE 9 FAIRCHILD AVEATTN W. BACHAROWSKI, DES ATTN A. SOBEL ATTN D. ENDE, DIRSOLON, ON 44139 NORTHBROOK, IL 60062 PLAINVIEW, NY 11803

KENDUN RECORDERS 3 M mrr721 SO GLENWOOD PL BLDG 260-5B-06 CRYSTAL PHYSICS ANDATTH E. A. ROMANA ATTN D. DRESSLER ELECTRONIC LABORATORYBURBANK, CA 91506 ST PAUL, MN 55101 ATTN A. LINZ

CAMBRIDGE, NA 0213qKENTRON INTL RTC MAGNAVOX CORP3221 N ARMISTEAD AVE 7300 W LAWRENCE AVE MIT LINCOLN LABATTN T. 0. BERHACHE, ENG ATTN N. SCHNEIDER, PE 244 WOOD STHAMPTON, VA 23666 CHICAGO, IL 60656 ATTN A. H. HUNTOON. MTR

LEXINGTON, MA 02"73LAB AUTOMATION INC MARTIN MARIETTA AERO5635 5 DORCHESTER AVE 6801 ROCKLEDOE DR MITRE CORPATTN F. M. BENLEM, PRES ATTN D. M. HELLER, RES P 0 BOX 208CHICAGO, IL 60637 BETHESDA, MD 20014 ATTN P. A. RUOYE MTS

ATTN F. MCKEEN, MTSLAKESHORE CRYOGENICS INC MARYLAND ACADEMY SCIENCE REnFORD, MA 01730ATTN W. N. LAWLESS 601 LIGHT STWESTERVILLE, ON 43081 ATTN S. A. KARON, DIR EXN MONACO ENTERPRISES INC

BALTIMORE, MD 21230 PO BOX 14129

LIBRARY SYS GRP ATTN D. N. MIRTH, Des RHG3055 1/2 ARAPAHOE MB ASSOCIATES SPOKANE, WA gq214

ATTN N. STONE BOLLINGER CANYON Rn

BOULDER, CO 80303 ATTN R. DOMPE, SUP ER MONSANTO COSAN ROMON, CA 94583 32 WATER ST

ATTN A. FISTILLA, nDPSSTONINGTON, CT 06378

27

DISTRIBUTION (Cont 'd)

MOSTEK NCR CORP E & M ADV DEV PHYSIO CONTROL1215 CROSBY R MAIN 6 K STS 11811 WILLOWS ROADATTN R EDENF1ELD, PROD ENG ATTN D. S. CHANG, ENGR ATTN A. R. MARRIOTT, ENGRDALLAS, TX 75006 DAYTON, OH 45459 REDMOND, WA 98052

MOTOROLA NCR E&M COLUMBIA PLANTRONICS8000 W SUNRISE BLVD 3325 PLATT SPRING RD 345 ENCINAL STREETATTN J. MCDANIEL, DEV ENG ATTN L. BAILEY, DUH ENG ATTN C. STOUTATTN C. A. WOOD W COLOMBIA, SC 29169 SANTA CRUZ, CA 95060ATTN J. L. HAMILTON, DES ENGFT LAUDERDALE, FL 33322 NESCO COKMUNICATIONS DIV P/M INDUSTRIES

107 SAN ZENO WAY 14320 NW SCIENCE PKMOTOROLA INC ATTN D. J. DUKE, SR ENGR ATTN J. RECHE, CHF ENG9733 COORS RD, NW SUNNYVALE, CA 94086 PORTLAND, OR 97229ATTN GENE HAERTLINGALBUQUERQUE, M 87114 NrTRON POLHEMUS NAVIGATION

750 STIERLIN ROAD PO BOX 298MOTOROLA IN1C ATTN R. FISH, PROD MGR ATTN M. SCHNEIDER, ENG615 E WONSLEY DR MOUNTAIN VIEW, CA 94043 ESSEX JUNCTION, VT 05452ATTN E. GOLD, DES ENGAUSTIN, TX 78753 NORTHROP POLAROID CORP

600 NICKS RD 28 OSBORN ST 40MSI DATA CORP ATTN R. COVERT ATTN F. R. SOINI, SR ENG340 FISCHER ATTN 4. L. FISHER, ENG CAMBRIDGE, MA 02139ATTN A. P. SPIRKA, ENGR ROLLING MEADOW, IL 60008COSTA MESA, CA 92627 POLYMORPHIC SYSTEMS

NORTHWSTRN U REHAB ENG 460 WARD DRIVEMULTI MEDIA ARTS 345 E SUPERIOR AM ATTN L. G. DANCZYK, VP ENGPO BOX 14486 ATTN C. W. NECKATHORNE, DES ENG SANTA BARBARA, CA 9311lATTN D. MALLIS, DIR DP CHICAGO, IL 60611AUSTIN, TX 78761 PRACTICAL DESIGN

NUTRITION TECHNOLOGY DIV 76 CIRCUIT AVEN AM BIOLOGICALS/EDI LETTERKAN ARMY INST RS ATTN W. C. WIERS16500 WA 15TH AVE ATTN B. PULTS NEWTON, MA 02161ATTN B. DORKAN, MGR PRESIDO OF SF, CA 94129MIAMI, FL 33169 PRAXIS COMPUTER SYS

ODETICS 256 NO MAINNAT SEMI 1859 S MANCHESTER ATTN R. R. MCBRIDE, TEST ENGR919 BRENTWOOD DR ATTN S. BARTHOLET, SR ENGR ALPINE, U 84003ATTN N. BORUTA, ENG ANAHEIM, CA 92802SAN JOSE, CA 95129 PRIME COMPUTER INC

OHIO SCIENTIFIC 500 OLD CONN PATHNATIONAL SEMI 15461 CHEMICAL LANE ATTN S. a. BADEN. DES ENGR1130 KIFER ROAD ATTN A. G. TAYLOR, MGR FRAMINGHAM, MA 01701ATTN D. GUPTA, ENG HUNTINGTON BCH, CA 92649SUNNYVALE, CA 94086 QWIP SYR

OLIVETTI CORP 1125 DUNCAN DRNATIONAL SEMICONDUCTOR 20370 TOWN CENT LN ATTN T. D. LAPP4988 AVE DE LOS ARBOLE ATTN E. K. HUANG, ENGR MAITLAND, FL 32751ATTN S. C. VALINO, SECT ND CUPERTINO, CA 95014SANTA CLARA, CA 95050 QUAN'TEX CORP

OSBORNE 252 N WOLDE ROADNATIONAL SEMICONDUCTOR 630 BANCROFT WAY ATTN S. MALLICK, ENG1078 ROSELLE ST ATTN J. KANE, PRJ MGR SUNNYVALE, CA 94086ATrN JUGONZALEZ, ERG BERgELEY, CA 94710SAN DIEGO, CA 92121 RAMTEK

PA INC 2211 LAWSON LN4CAR PO BOX 7631 ATTN S. 3. RAICHLEN, DES ENGP 0 BOX 3000 ATTN J. L. DIXON, SYS ERG SANTA CLARA, CA 95050ATTN R. BOVET, SYS MGR HOUSTON, TX 77007BOULDER, CO R0307 RAYTHEON

PACESETTER SYS INC 528 BOSTON POST RDNCR 12740 SAN FERNANO RD ATTN E. REILLY, ENGRS PATTERSON BLVD B30 ATTN L. 0. CRAWFORD, EhG SUDBURY, MA 01776ATTN L. L. TRIBBY. SR ENGR SYIMAR, CA 91342DAYTON, OR 45479 RAYTHEON

PHILIPS MEDICAL SYS INC HARTWELL RD CFI-42NCR 710 BRIDGEPORT AVE ATTN G. k. LAGASBE, PR3718 N ROCK RD ATTN R. FRANK, SUPV BEDFORD, MA 01730ATTN J. S. DEES, SYS ENG SHELTON, CT 06484WICHITA, KS 67226

28

DISTRIBUTION (Cont'd)

RAYTHEON MARINE SCID SPERRY SECOR676 ISLAND POND RD DRAWER K 2724 DORR AVEATTN N. A. ISABELLE, ENG ATTN R. E. STORCK, C DENG ATTN R. N. SMITH, ENGMANCHESTER, NH 03104 DALLAS, PA 18612 FAIRFAX, VA 22031

RCA 15 505 SCIENTIFIC RADIO SYS SPERRY UNICORN1300 S ROGERS 367 ORCHARD STREET 52-21 65 PLAT'rN J. F. PRATHER, MGR CEN ATTN I. A. PAULL, ES ATTN W. BURSTEIN, ENGRBLOOMINGTON, IN 4740 ROCHESTER, NY 14606 MASPETT, NY 11378

RCA CORP SERVO CORP OF AMERICA SPERRY UNIVAC MCOROUTE 202 111 NEW SOUTH RD 2722 MICHELSONATTN G. S. HARAYIDA ATTN J. NORHOUS, SR ENGR ATTN R. L. MIFFLIN, DES ENGATTN W. SCHILP HICKSVILLE, NY 11802 IRVINE, CA 92713SOMERVILLE, NJ 08873

SHILLER MGMT CORP SPERRY MICROWAVERECOGNITION EQUIP 100 W 57 STREET BOX 4648BOX 222307 MS 34 ATTN R. SHILLER, PRES ATTN R. THURMOND, EN S HOATTN M. S. MORT ENG NEW YORK, NY 10019 CLEARWATER, FL 33518DALLAS, TX 75222

SHIVVERS ENTERPRISES STANDARD RES INSRECOGNITION EQUIPMENT 614 W ENGLISH 333 RAVENSWOOD2701 E GRAUWYLER MS 69 ATTN L. J. KLEIN ATTN W. PARK RES ENGRATTN G. FANCHER CORYDON, IA 50060 ATTN Y. H. TSUC, 410AIRVING, TX 75061 MENIAl PARK, CA q402

SILONICS

RIS ASSOC 525 OAKMEAD PKWY SUNDSTRAND DATA CONTROLBOX 7 ATTN H. G. STEVENSON, SR ENGR OVERLAKE INDUSTRIAL PKATTN T. E. HEINDSMANN, PE SUNNYVALE, CA 94086 ATTN D. F. NEIMAN, ENGVASHON, WA 98070 REDMOND, WA 98052

SINGER COMPANYROCKETDYNE DIV ROCKWELL 286 ELDRIDGE ROAD SOUTHERN BELL TEL6726 RUDNICK AVE ATTN L. HOREY, ENGR 421W CHURCH STATTN G. S. BELL, PR0 MGR FAIRFIELD, NJ 07006 ATTN P. BIORN, SUPVCANOGA PARK, CA 91303 JACKSONVILLE, FL 32202

SINGER KEARFOIT DIVROCKETOYNE 150 TOTOWA RD MS10618 SYNDRILL PRODUCTS6633 CANOGA AVE ATTN P. J. GRIFFO, ENG 1375 EUCLID AVE #414ATTN W. E. WILKE, NTS WAYNE, NJ 07470 ATTN W. SANLEY, VPCANOGA PARK, CA 91304 CLEVELAND, ON 44115

SINGER-LINKROCKWELL HANFORD OPER DEPT 461 SYSTRON DONNER CORP271-T BLDG 200W ATTN F. C. RUF, ENG 935 DETROIT AVEATTN W. F. HICAISR, SEN ENG BINGHAMTON. NY 13902 ATTN C. BRIGHT, R&D MGRRICHLAND, WA 99352 CONCORD, CA 94518

SLACROCKWELL INT PO BOX 4349 TARLINI CO3370 MIRALOMA FR 47 ATTN D. QTIIMETTE PO BOX 1135ATTN J. R. TEIG, MTS STANFORD, CA 94305 ATTN S. WOLFF, ENGATTN T. RAAB, MTS BERKELEY, CA 94701ANAHEIM, CA 92803 C. L. SMITH, AIC

603 TCS TALLEY INDUSTRIESROCKWELL INTL COLLINS PSC BOX 2005 78 FAIRMOUNT AVENUETELECOMM P1D M5137 148 SEMBACHAB APO, MY 09130 ATTN W. GEERARD, DES ENGATTN 1. V. NARDT, GRP ND) BRIDGEPORT, CT 06606CEDAR RAPIDS, IA 52406 SPACE SCIENCE LAB

SPACE SCIENCE RD G. W. TAYLORROXBORO CO ATTN R. HERMAN, DSNR 305 OODDS LANE38 NEPONSET AVE BERELEY, CA 94720 PRINCETON, NJ 08540ATTN R. j. WHITE, SR RES ENGFOXBORO, MA 0203% SPERRY FLIGHT SYS TECH SERVICE CORP

21111 N 19TH AVE 2811 WILSHIRE BLVDSANDERS ASSOC INC ATTN K PLLIS, PROJ ENGR ATTN R. RTCHEY, WTS9S CANAL ST ATTN R. NALETTR, PR ENGR SANTA MONICA, CA 90403ATTN D. B. SCHLICNTING, SR ENGR ATTN N. LEWIS, ENG 109BATTN W. R. HUTCHINS, MGR PHOENIX, AZ 85027 TEKTRONIXNASHUA, NIl 03061 P O BOX 500

SPERRY MARINE SYSTEMS ATTN R. L. CORDRAY ENGRSC0 CORP RT 29 NORTH ATTN N. G. CHURCH, ENGROLD NEWT'WN RD ATTN L. F. JONES, ENG ATTN R. ANDPRSIN, ENGRATTN N. MOROF, ENGR CARLOTTESVILLE, VA 22901 ATTN B. COOPPENDER, ENG %GPDANBURY, aF 06810

29

DISTRIBUTION (Cont'd)

TEKTRONIX (Cont'd) TG&G ELECTRONICS VA MEDICAL CENTERATTN J. G. LARSEN, DES ENGR 6154 COTTLE RD D7 CoD 1168ATTN L. J. DOUBRAVA, DES ENG ATTN R. M. PIER, ENG ATTN R. G. THONASBEAVERTON, OR 97077 SAN JOSE, CA 95123 GAINESVILLE, FL 32602

TELEDYNE SYSTEMS CO THIOKOL CORP VARIAN23448 DOLOROSA ST P 0 BOX 9175 PO BOX 2883ATTN I. COHEN ATTN A. B. grUCKI, SRR ENGR ATTN J. H. SANDOWWOODLAND HILL, CA 91367 OGDEN. Ur 84409 RICHARDSON, TX 75080

TELETYPE CORP TIMKEN COMPANY VARIAN ASSOCIATES5555 W TOURY 1835 DUEBER AVE SW 2700 MITCHELL DRIVEATTN E. C. KDEPPE, ENG ATTN T. W. KLIFN, PE ATTN W. A. LEWIS, ErSKOKIE, IL 60077 CANTON, ON 44706 WALNUT CRK, CA 94598

TEKNEKRON ARD TOKHEIM CORP VERNITRON CORP2121 ALLSTON WAY 1600 WABASH AVE ATTN B. JAFFEATTN K. W. NEFF, ENG ATTN J. DYBEN, ENG BEDFORD, ON 44146BERKELEY, CA 94704 FT WAYNE, IN 46801

VOUGHT CORP

TELSTAR ELECTRONICS CORP THE TOPPING CORPORATION BOX 225907700 HUMMEL AVENUE 37 TOPPING LANE ATTN G. ). BURROWS, DESIGNATTN R. S. MARSTON ATTN R. E. WENDT, JR PRES DALLAS, TX 75265SOUTHOLD, NY 11971 DES PEARES, NO 63131

VPI & SUTELTONE CORP TPS ELECTRONICS 204 WASHINGTON ST10801 120TH AVE NE PO BOX 23210 ATTN S. C. AHALTATTN R. A. STARK, COMP ENGR ATTN D. W. MICHAEL, PRES BLACKSBURG, VA 24060KIRKLAND, WA 98033 HONOLULU, HI 96822

WANG LABSTERADYNE TRADITIONAL MANAGEMENT ONE INDUSTRIAL AVENUE183 ESSEX ST P 0 BOX 972 ATTN EDWARD LESHIDEATTN T. BORRO7, PROJ ENG ATTN M. FRIEDMAN, UP MGR LOWELL, MA 01851BOSTON, NA 02111 P 0 BOX 972

HANOVER, NH 03755 WATKINS JOHNSONTERADYNE CENTRAL INC 3333 HILLVIEW3368 COMMERCIAL AVE TRAM TELECOMMUNICATIONS ATTN G. H. FLAMER, MTSATTN J. H. PAPIER 20833 HORACE STREET PALO ALTO, CA 94304NORTHBROOK, IL 60062 ATTN G. R. TOUSSAINT, MGR

CHATSWORTN, CA 91311 WCS COTEXAS INSTRUMENTS PO BOX 24834 FOREST MS 124 TRI-DATA ATTN J. BRADY, VPATTN W. E. MESHACH, EKG 505 E MIDDLEFIELD RD NEWBURY PARK, CA 91320ATTLEBORO, MA 02703 ATTR D. SCOTT, ST ENGR

MT VIEW, CA 94043 W.LCH ALLYN INCTEXAS INSTRUMENTS 99 JORDAN ROADPO BOX 1444 TRIPLE R ASSOC ATTN C. M. HAMMONDATTN W. C. HUBBELL 10 TRACY DR SKANEATELE, NY 13153ATTN B. ASHMORE, DSGNER ATTN R. CRrrELLI ENGRATTN S. C. TSAUR, SE ENGR FORDS, NJ 08863 WESTFIELD ASSOCIATESHOUSTON, TX 77001 789 CROSS CREEK OR

TRW DSSG MI 1338 ATTN H. M. ROSSTEXAS INSTRUMENTS ONE SPACE PARK ST WOIS, MO 43141PO BOX 225012 MS 35 ATTN T. G. WALI'ER, DSSG Ml 1338ATTN N. COFFEY, ENGR ATTN R. BOTNEY, TS, R6-1144 WESTERN ELECTRICDALLAS, TX 75265 REDONDO BEACH, CA 90278 PO BOX 25000

ATTN A. K. LAGARDE, ADDT MGRTEXAS INSTRUMENTS ULTRASOUND LABS GRENSBORO, NC 27142CRT 2 BOX 349 C16 ENG 1100 w MICHIGAN A 32ATTN T. HARRIS ATTN K. JOHNSTON, PROJ ENG WESTINGHOUSE ELECTRICLUBBOCK, TX 79415 INDIANAPOLIS, IN 46223 200 BETA DRIVE

M. ASCENZI, ENGRTEXAS INSTRUMENTS INC US DYNAMICS CORP PITSBUTRGH, PA 15238PO BOX 322013 425 BAYVIEW AVEATTN P. S. DUFF, SYS ANALYST ATTN R. KATZ, DIR WESTINGHOUSE RESEARCH LABORATORIESDALLAS, TX 75222 AMTTYVILLE, MV 1170 ATTN JIM S. Y WU

PITTSBURGH, PA 15235TEXAS INSTRUMENTS INC UTOPIA VIDEOPO BOX 226080 PO BOX 171 WILGOOD CORPATTN D. PINKOS, DES PANG ATTN R. BERGER, ERG PO BOX 1247DALLEAS, TX 75266 RFARSVILLE, MY 12409 ATTN N. F. FELLER, RES RG

DUNNRLLON, FL 32630

30

DISTRIBUTION '4ont 'd)

XEROX UNIV OF ILL THOMSON CSF LABORATORIES701 S AVIATION BLVD AZ 239 C S L ATTN F. MICHERNATTN K. NORMAN ATTN B. KIRKOOD, SR ENGR CENTRAL DE RECHERCHESEL SEGUNDO, CA 90245 ATTN G. D. HADDEN, COORDINATED SCI ORSAY, FRANCE

LABXEROX URBANA, IL 61801 WASHEDA UNIVERSITY49 YELLOWSTONE DR ATTN J. KOBAYASHIATTN N. PEPE, ELEC ENG UNIVERSITY OF MISSOURI TOKYO, JAPANW. HENRIETTA, NY 14586 307 SOUTH OLIVE ST

ATTN L. M. STRUTMANN, E US ARMY ELECTRONICS RESEARCHXEROX MEMORY SYSTEMS ROLLA, MO 65401 & DEVELOPMENT COMMAND3333 BOWERS AVENUE ATTN TECHNICAL DIRECTOR, DRDEL-CTATTN P. M. BURTON UNIV OF NEW MEXICOSANTA CLARA, CA 95051 ATTN W. W. GRANNENAN HARRY DIAMOND LABORATORIES

ALBUQUERQUE, NM 87131 ATTN CO/TD/TSO/DIVISION DIRECTORSXEROX RSCH CENTER ATTN RECORD COPY, 812003333 COYOTE HILL RD THE PENNSYLVANIA STATE UNIVERSITY ATTN HDL LIBRARY, 81100 (3 COPIES)ATTN G. 0. THOMPSON MATERIALS RESEARCH LABORATORY ATTN HDL LIBRARY, 81100 (WOODBRIDGE)PALO ALTO, CA 94304 ATTN L. E. CROSS ATTN TECHNICAL REPORTS BRANCH, 81300

ATTN R. 9. NEWNHAH ATTN CHAIRMAN, EDITORIAL COMMITTEEXEROX CORPORATION UNIVERSITY PARK, PA 16802 ATTN LEGAL OFFICE, 97000WEBSTER RESEARCH CENTER ATTN N. KARAYIANIS, 13200ATTN R. L. HOLMAN RUTGERS UNIVERSITY ATTN G. SZTANKAY, 13300WEBSTER, NY 14580 COLLEGE OF ENGINEERING ATTN J. NEMARICH, 13300

DEPARTMENT OF CERAMICS ATTN S. KULPA, 13300XICOR NEW BRUNSWICK, NJ 08903 ATTN B. WEBER, 133001221 INNSBRUCK DRIVE ATTN D. BARR, 13500ATTN P. KLEIN, PRES AES DATA LTD ATTN W. ISLER, 13500SUNNYVALE, CA 94086 2330 MILLRACE COURT ATTN B. OBRIANSKY, 13500

ATTN B. DI STEFANO, HARD ENG ATTN A. EDWARDS, 13500CATHOLIC UNIVERSITY OF AMERICA MISSISSAUGA O LSNIW2 CANADA ATTN I. ABRAOVITZ, 15200CARDINAL STATION ATTN N. BERG, 15200Po BOX 232 ALLEN CLARK RESEARCH CENTER ATTN M. CASSEDAY, 13200ATTN C. F. PULRARI ATTN F. W. AINGE ATTN J. BLACKBURN, 22300WASHINGTON, DC 20017 PLESSEY LTD, CASWELL, NORTHANTS ATTN R. JOHNSON, 15000

UNITED KINGDOM ATTN E. BROWN, 00211UNIVERSITY OF CALIFORNIA ATTN F. CROWNE, 13200SCHOOL OF ENGINEERING UNIVERSITY OF OXFORD ATTN E. KATZEN, 13200LOS ANGELES, CA 90024 DEPARTMENT OF INORGANIC CHEMISTRY ATTN H. DROPKIN, 13200

ATTN R. N. CASTELLANO ATTN R. LEAVITT, 13200UNIV OF CALIF OXFORD ENGLAND ATTN C. MORRISON, 13200130 PHYSICAL SCI ATTN G. SINONIS, 13200ATTN J. HENIGMAN, DEV EGR DIFFRACTO LTD ATTN M. TOBIN, 13200IRVINE, CA 92717 2775 KEW ATTN D. WORTKAN, 13200

ATTN G. RENSHAW, ORSH ATTN J. SATTLER. 132009 LOS ANGELES COLLEGE WINDSON, ON ATTN T. L. WORCRESKY, 132001301 E BROOKLYN AVE CANADA ATTN L. KITCNMAN, 47500ATTN B. B. FITCHEL ATTN S. LIEBERMAN, 13500MOMTEREY PK, CA 91754 INDIAN INSTITUTE OF TECHNOLOGY ATTN I. MARCUS, 48000

ATTN 9. C. SUBARO ATTN 3. MCGARRTY, 22300GEORGIA INSITIUTE OF TECHNILOGY KANPUR, INDIA ATTN J. HALPIN. 22800SCOOL OP ELECTRICAL ENGINEERING ATTN R. POLIMArEI, 20240ATTN K. GAYLORD SRL RESEARCH CENTRE ATTN P. BRODY, 13200 (100 COPIES)ATTN M. G. MOHARAM ATTN H. SCNICHLATLANTA, GA 30332 STUTTGART GERMANY

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