N-Channel SuperFET MOSFET - Shaoguang N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCH47N60_F133 Rev. C0 1 March 2013 FCH47N60_F133 N-Channel SuperFET® MOSFET 600 V,

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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0

www.fairchildsemi.com1

March 2013

FCH47N60_F133N-Channel SuperFET® MOSFET600 V, 47 A, 70 mΩ

Features• 650V @TJ = 150°C

• Typ. RDS(on) = 58 mΩ

• Ultra Low Gate Charge (Typ. Qg = 210 nC)

• Low Effective Output Capacitance (Typ. Coss.eff = 420 pF)

• 100% Avalanche Tested

• RoHS Compliant

Application• Solar Inverter

• AC-DC Power Supply

DescriptionSuperFET® MOSFET is Fairchild Semiconductor®’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This technology is tai-lored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Conse-quently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Thermal Characteristics

Symbol Parameter FCH47N60_F133 Unit

VDSS Drain to Source Voltage 600 V

ID Drain Current-Continuous (TC = 25oC) 47

A-Continuous (TC = 100oC) 29.7

IDM Drain Current - Pulsed (Note 1) 141 AVGSS Gate to Source Voltage ±30 VEAS Single Pulsed Avalanche Energy (Note 2) 1800 mJIAR Avalanche Current (Note 1) 47 AEAR Repetitive Avalanche Energy (Note 1) 41.7 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation(TC = 25oC) 417 W- Derate above 25oC 3.33 W/oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 oC

Symbol Parameter Typ. Max. Unit

RθJC Thermal Resistance, Junction to Case, Max - 0.3 oC/WRθJA Thermal Resistance, Case-to-Sink 0.24 - oC/WRθJA Thermal Resistance, Junction to Ambient, Max - 41.7 oC/W

*Drain current limited by maximum junction temperature

GSD

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Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCH47N60 FCH47N60_F133 TO-247 - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain to Source Breakdown VoltageVGS = 0 V, ID = 250 μA, TC = 25oC 600 - - VVGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V

ΔBVDSS ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC - 0.6 - V/oC

BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 47 A - 700 - V

IDSS Zero Gate Voltage Drain CurrentVDS = 600 V, VGS = 0 V - - 1

μAVDS = 480 V, TC = 125oC - - 10

IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 VRDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 23.5 A - 0.058 0.07 ΩgFS Forward Transconductance VDS = 40 V, ID = 23.5 A (Note 4) - 40 - S

Ciss Input CapacitanceVDS = 25 V, VGS = 0 Vf = 1.0 MHz

- 5900 8000 pFCoss Output Capacitance - 3200 4200 pFCrss Reverse Transfer Capacitance - 250 - pFCoss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 160 - pFCosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 420 - pF

td(on) Turn-On Delay TimeVDD = 300 V, ID = 47 ARG = 25 Ω

(Note 4, 5)

- 185 430 nstr Turn-On Rise Time - 210 450 nstd(off) Turn-Off Delay Time - 520 1100 nstf Turn-Off Fall Time - 75 160 nsQg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 47 A,

VGS = 10 V (Note 4, 5)

- 210 270 nCQgs Gate to Source Gate Charge - 38 - nCQgd Gate to Drain “Miller” Charge - 110 - nC

IS Maximum Continuous Drain to Source Diode Forward Current - - 47 AISM Maximum Pulsed Drain to Source Diode Forward Current - - 141 AVSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 47 A - - 1.4 Vtrr Reverse Recovery Time VGS = 0 V, ISD = 47 A

dIF/dt = 100 A/μs (Note 4)- 590 - ns

Qrr Reverse Recovery Charge - 25 - μC

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300 μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100 101

100

101

102

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

※ Notes : 1. 250μ s Pulse Test 2. TC = 25

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]2 4 6 8 10

100

101

102

※ Note 1. VDS = 40V 2. 250μ s Pulse Test

-55

150

25

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]

0 20 40 60 80 100 120 140 160 180 2000.00

0.05

0.10

0.15

0.20

VGS = 20V

VGS = 10V

※ Note : TJ = 25

RD

S(O

N) [

Ω],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25150

※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test

I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

VSD , Source-Drain Voltage [V]

10-1 100 1010

5000

10000

15000

20000

25000

30000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

※ Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]0 50 100 150 200 250

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

※ Note : ID = 47A

V GS,

Gat

e-S

ourc

e V

olta

ge [V

]

QG, Total Gate Charge [nC]

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variationvs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 10. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. VGS = 0 V 2. ID = 250 μ A

BVD

SS, (

Nor

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ized

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rain

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Brea

kdow

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ltage

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes : 1. VGS = 10 V 2. ID = 47 A

RD

S(O

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(Nor

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-Sou

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On-

Res

ista

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TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

102

Operation in This Area is Limited by R DS(on)

DC

10 ms

1 ms

100 us

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]25 50 75 100 125 150

0

10

20

30

40

50

I D

, Dra

in C

urre

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]

TC, Case Temperature [ ]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1※ N o te s : 1 . Z θ JC( t) = 0 .3 /W M a x .

2 . D u ty F a c to r, D = t1/t2

3 . T JM - T C = P D M * Z θ JC( t)

s in g le p u lse

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC(t)

, The

rmal

Res

pons

e

t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]

t1

PDM

t2

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

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Mechanical Dimensions

Dimensions in Millimeters

TO-247

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Documents

N-Channel SuperFET MOSFET - Shaoguang N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCH47N60_F133 Rev. C0 1 March 2013 FCH47N60_F133 N-Channel SuperFET® MOSFET 600 V,