Mosfet IRF640

©2001 Fairchild Semiconductor Corporation IRF640, RF1S640, RF1S640SM Rev. B

IRF640, RF1S640, RF1S640SM

18A, 200V, 0.180 Ohm, N-Channel Power MOSFETsThese are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17422.

Features

• 18A, 200V

• rDS(ON) = 0.180Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speed

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

PackagingJEDEC TO-220AB JEDEC TO-263AB

JEDEC TO-262AA

Ordering InformationPART NUMBER PACKAGE BRAND

IRF640 TO-220AB IRF640

RF1S640 TO-262AA RF1S640

RF1S640SM TO-263AB RF1S640

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.

G

D

S

GATE

DRAIN (FLANGE)

SOURCEDRAIN

DRAIN(FLANGE)GATE

SOURCE

DRAINSOURCE

GATEDRAIN (FLANGE)

Data Sheet January 2002


Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF640, RF1S640, RF1S640SM UNITSDrain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 200 VDrain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 VContinuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

1811

AA

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 72 AGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 VMaximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oCSingle Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 580 mJOperating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oCMaximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TLPackage Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300260

oCoC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) 200 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 18 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 1) rDS(ON) ID = 10A, VGS = 10V (Figures 8, 9) - 0.14 0.18 Ω

Forward Transconductance (Note 1) gfs VDS ≥ 10V, ID = 11A (Figure 12) 6.7 10 - S

Turn-On Delay Time td(ON) VDD = 100V, ID ≈ 18A, RGS = 9.1Ω , RL = 5.4Ω,MOSFET Switching Times are Essentially Independent of Operating Temperature

- 13 21 ns

Rise Time tr - 50 77 ns

Turn-Off Delay Time td(OFF) - 46 68 ns

Fall Time tf - 35 54 ns

Total Gate Charge(Gate to Source + Gate to Drain)

Qg(TOT) VGS = 10V, ID ≈ 18A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating TemperatureIG(REF) = 1.5mA

- 43 64 nC

Gate to Source Charge Qgs - 8 - nC

Gate to Drain “Miller” Charge Qgd - 22 - nC

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF

Output Capacitance COSS - 400 - pF

Reverse Transfer Capacitance CRSS - 100 - pF

Internal Drain Inductance LD Measured From the Contact Screw on Tab to Center of Die

Modified MOSFET Symbol Showing the Internal Devices Inductances

- 3.5 - nH

Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die

- 4.5 - nH

Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case RθJC - - 1 oC/W

Thermal Resistance Junction to Ambient

RθJA Free Air Operation, IRF640 - - 62 oC/W

RθJA RF1S640SM Mounted on FR-4 Board with Minimum Mounting Pad

- - 62 oC/W

LS

LD

G

D

S



Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode

- - 18 A

Pulse Source to Drain Current(Note 2)

ISDM - - 72 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) - - 2.0 V

Reverse Recovery Time trr TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 120 240 530 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 1.3 2.8 5.6 µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25Ω, peak IAS = 18A.

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

0 50 100 1500

TC, CASE TEMPERATURE (oC)

PO

WE

R D

ISS

IPA

TIO

N M

ULT

IPL

IER

0.2

0.4

0.6

0.8

1.0

1.2

8

4

025 50 75 100 125 150

16

I D, D

RA

IN C

UR

RE

NT

(A

)

TC, CASE TEMPERATURE (oC)

20

12

tP, RECTANGULAR PULSE DURATION (s)

10

ZθJ

C, T

RA

NS

IEN

T

TH

ER

MA

L IM

PE

DA

NC

E (

oC

/W)

10-3 10-2 10-1 110-5 10-4

10

0.01

0.1

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJC + TC

PDM

t1t2

0.001

1

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05



FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Specified (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

101

10

1

I D, D

RA

IN C

UR

RE

NT

(A

) 100

100

TC = 25oC

SINGLE PULSE

1000OPERATION IN THIS AREA MAY BELIMITED BY rDS(ON)

DC

100µs

10µs

1ms

10ms

TC = 25oC

1000

TJ = MAX RATED


I D, D

RA

IN C

UR

RE

NT

(A

)

00 12 24 36 48

6

12

18

24

30

60

7V

6V

5V

4V

10V8V

PULSE DURATION = 80µsDUTY CYCLE = 0.5% MAX

0

6

0 1.0 2.0 3.0 5.0

12

18

I D, D

RA

IN C

UR

RE

NT

(A

)


VGS = 6V

24

4.0

VGS = 7V

30VGS = 8V

VGS = 10V

VGS = 5VVGS = 4V


0 4 6 8 1020.1

1

10

I D, D

RA

IN C

UR

RE

NT

(A

)

VGS, GATE TO SOURCE VOLTAGE (V)

100

150oC

25oC

PULSE DURATION = 80µsDUTY CYCLE = 0.5% MAXVDS ≥ 50V

0

0.6

0.9

1.2

15 30 45 60

r DS

(ON

), D

RA

IN T

O S

OU

RC

E

ID, DRAIN CURRENT (A)

75

1.5

0

0.3 VGS= 10V

VGS = 20V

ON

RE

SIS

TAN

CE

(Ω

)


NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

E

3.0

1.8

1.2

0.6

0-60 -40 -20 0 20 40 60

TJ, JUNCTION TEMPERATURE (oC)

100 120 140 160

2.4

80

ON

RE

SIS

TAN

CE

PULSE DURATION = 80µsDUTY CYCLE = 0.5% MAXVGS = 10V, ID = 18A



FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25

1.05

0.95

0.85

0.75-60 -40 -20 0 20 40 60

TJ, JUNCTION TEMPERATURE (oC)

NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

EB

RE

AK

DO

WN

VO

LTA

GE

100 120 140 160

1.15

80

ID = 250µA3000

600

01 10 100

C, C

APA

CIT

AN

CE

(p

F)

1800


2400

1200

CISS

COSS

CRSS

CISS = CGS + CGDCRSS = CGDCOSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

25oC

ID, DRAIN CURRENT (A)

gfs

, TR

AN

SC

ON

DU

CTA

NC

E (

S)

00 6 12 18 24

3

6

9

12

15

30

150oC


0 0.8 1.2 1.6 2.00.41

10

100

I SD

, SO

UR

CE

TO

DR

AIN

CU

RR

EN

T (

A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

1000

25oC

150oC


Qg, GATE CHARGE (nC)

VG

S, G

AT

E T

O S

OU

RC

E V

OLT

AG

E (

V)

00 15 30 45 60

4

8

12

16

20

75

ID = 28A

VDS = 100V

VDS = 160V

VDS = 40V



Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

tP

VGS

0.01Ω

L

IAS

+

-

VDS

VDDRG

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

0V

VDD

VDS

BVDSS

tP

IAS

tAV

0

VGS

RL

RG

DUT

+

-VDD

tON

td(ON)

tr

90%

10%

VDS90%

10%

tf

td(OFF)

tOFF

90%

50%50%

10%PULSE WIDTH

VGS

0

0

0.3µF

12VBATTERY 50kΩ

VDS

S

DUT

D

G

IG(REF)0

(ISOLATEDVDS

0.2µF

CURRENTREGULATOR

ID CURRENTSAMPLING

IG CURRENTSAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPEAS DUT

Qg(TOT)

Qgd

Qgs

VDS

0

VGS

VDD

IG(REF)

0


DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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Rev. H4

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EnSignaTM

FACT™FACT Quiet Series™

SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET

STAR*POWER is used under license

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