MOSFET - farnell.com · 6 600V CoolMOS™ P7 Power Transistor IPZA60R060P7 Final Data Sheet Rev. 2.0, 2017-11-24 Table 7 Reverse diode characteristics Values Min. Typ. Max

1

IPZA60R060P7

Rev.2.0,2017-11-24Final Data Sheet

123 4

PG-TO247-4-3

DrainPin 1

GatePin 4

PowerSourcePin 2

DriverSourcePin 3

MOSFET600VCoolMOS™P7PowerTransistorTheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellenteaseofuse,e.g.verylowringingtendency,outstandingrobustnessofbodydiodeagainsthardcommutationandexcellentESDcapability.Furthermore,extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompactandmuchcooler.

Features•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness•Significantreductionofswitchingandconductionlosses•ExcellentESDrobustness>2kV(HBM)forallproducts•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)

Benefits•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages•Simplifiedthermalmanagementduetolowswitchingandconduction losses•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection•Suitableforawidevarietyofapplicationsandpowerranges

PotentialapplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

ProductValidation:QualifiedforindustrialapplicationsaccordingtotherelevanttestsofJEDEC47/20/22

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 60 mΩ

Qg,typ 67 nC

ID,pulse 151 A

Eoss @ 400V 7.1 µJ

Body diode diF/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinksIPZA60R060P7 PG-TO 247-4-3 60R060P7 see Appendix A

2

600VCoolMOS™P7PowerTransistorIPZA60R060P7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

4830 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 151 A TC=25°C

Avalanche energy, single pulse EAS - - 159 mJ ID=6.4A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.80 mJ ID=6.4A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 6.4 A -

MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 164 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - 60 Ncm M3 and M3.5 screws

Continuous diode forward current IS - - 48 A TC=25°CDiode pulse current2) IS,pulse - - 151 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=48A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 900 A/µs VDS=0...400V,ISD<=48A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj,max. Maximum Duty Cycle D = 0.502) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical RG

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.76 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W -

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.8mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600V,VGS=0V,Tj=25°C

VDS=600V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0490.115

0.060- Ω VGS=10V,ID=15.9A,Tj=25°C

VGS=10V,ID=15.9A,Tj=150°C

Gate resistance RG - 2.8 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 2895 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 48 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 89 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 925 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 23 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Turn-off delay time td(off) - 79 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Fall time tf - 4 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 15 - nC VDD=400V,ID=15.9A,VGS=0to10VGate to drain charge Qgd - 20 - nC VDD=400V,ID=15.9A,VGS=0to10VGate charge total Qg - 67 - nC VDD=400V,ID=15.9A,VGS=0to10VGate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=15.9A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=15.9A,Tj=25°C

Reverse recovery time trr - 254 - ns VR=400V,IF=6A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 2.9 - µC VR=400V,IF=6A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 23.1 - A VR=400V,IF=6A,diF/dt=100A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

30

60

90

120

150

180

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

0.5

0.2

0.05

0.1

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

50

100

150

200

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

20

40

60

80

100

12020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 20 40 60 80 100 1200.100

0.130

0.160

0.190

0.220

0.250

20 V

7 V

10 V

6.5 V

6 V5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.000

0.500

1.000

1.500

2.000

2.500

3.000

RDS(on)=f(Tj);ID=15.9A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

50

100

150

200

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 60 70 800

2

4

6

8

10

12

120 V 400 V

VGS=f(Qgate);ID=15.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

103

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

50

100

150

200

EAS=f(Tj);ID=6.4A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

550

560

570

580

590

600

610

620

630

640

650

660

670

680

690

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

2

4

6

8

10

Eoss=f(VDS)

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9Switchingtimes(ss)Switching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10Unclampedinductiveload(ss)Unclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

DIMENSIONSMIN. MAX.

A2

L

b

D

c

b2

E

e1

L1

Q

øP2

D1

A

A1

2.101.90

5.08

19.80

-

20.90

0.58

0.65

15.70

5.60

2.40

16.25

20.10

0.79

0.66

0.20

21.10

6.00

2.60

4.30

15.90

16.85

MILLIMETERS

4.90

2.31

5.10

2.51

b1

1.10 1.30

b3

PG-TO247-4-3

SCALE

Z8B00184785

REVISION

ISSUE DATE

EUROPEAN PROJECTION

03

21.08.2017

0 5

DOCUMENT NO.

2:1

A3 0.250.05

D2 1.05 1.35

D3 24.97 25.27

10mm

E1 13.10 13.50

E2 2.40 2.60

-

øP1 7.00 7.40

øP 3.50 3.70

S 6.15

T 9.80 10.20

U 6.00 6.40

1.34 1.44

e2 2.79

e3 2.54

D4 4.90 5.10

Figure 1 Outline PG-TO 247-4-3, dimensions in mm - Industrial Grade

13

600V CoolMOS™ P7 Power TransistorIPZA60R060P7

Rev. 2.0, 2017-11-24Final Data Sheet

7 Appendix A

Table 11 Related Links

• IFX CoolMOS P7 Webpage: www.infineon.com

• IFX CoolMOS P7 application note: www.infineon.com

• IFX CoolMOS P7 simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/P7



14

600V CoolMOS™ P7 Power TransistorIPZA60R060P7

Rev. 2.0, 2017-11-24Final Data Sheet

Revision History

IPZA60R060P7

Revision: 2017-11-24, Rev. 2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-11-24 Release of final version

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Trademarks updated August 2015

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

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WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if afailure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it isreasonable to assume that the health of the user or other persons may be endangered.

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MOSFET - farnell.com · 6 600V CoolMOS™ P7 Power Transistor IPZA60R060P7 Final Data Sheet Rev. 2.0, 2017-11-24 Table 7 Reverse diode characteristics Values Min. Typ. Max