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1 APEC 2017 1
Moore’s Law is Alive with GaN Alex Lidow, CEO
2 APEC 2017
Agenda
• Memory Lane • What happens with improved technology? • What happens with more integra8on? • Conclusions
3 APEC 2017
79 80 81 82 83 84 85 86 87 88 89 90 91 92
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2010
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
First Generation eGaN® FET
eGaN® is a registered trademark of Efficient Power Conversion Corporation
4 APEC 2017
79 80 81 82 83 84 85 86 87 88 89 90 91 92
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2010
GaN Circa 2012
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Improved Layout
5 APEC 2017
79 80 81 82 83 84 85 86 87 88 89 90 91 92
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Fourth Generation eGaN FET
6 APEC 2017 6
Now Lets Improve the Technology!
7 APEC 2017
Generation 5: Half the Size
EPC2010C 25 mOhm
6.06 mm2
EPC2046 25 mOhm 2.82 mm2
EPC2001C 7 mOhm
6.99 mm2
EPC2045 7 mOhm 3.96 mm2
8 APEC 2017
10
100
1000
0 50 100 150 200
Are
a·R
DS(
on) (
mm
2 ·mΩ
)
Drain-to-Source Voltage (V)
eGaN FETs Circa 2014
Si MOSFETs Circa 2014 Circa 2016
Circa 2016
Moore’s Law is Alive!
8X
4X
2X
2X
9 APEC 2017
Gen 5: Higher Performance - 100 V FETs
84 85 86 87 88 89 90 91 92 93 94 95 96
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Effic
ienc
y
Output Current (A)
fsw=500 kHz
VIN=48 V VOUT=5 V EPC2001C Gen 4
BSZ097N10NS5
EPC2045 Gen 5
EPC2045 Generation 5 Comparable RDS(on)
Gen 5 Devices have higher performance and are about half the size of Gen 4. Both Gen 5 and Gen 4 are far superior to the best available MOSFET
10 APEC 2017
84%
86%
88%
90%
92%
94%
96%
98%
0 2 4 6 8 10 12
Effic
ienc
y
Output Current (A)
200 kHz
100 kHz
200 kHz
100 kHz
EPC2010C Gen 4
EPC2046 Gen 5
VIN=160 V VOUT= 16 V
Gen 5 Devices have higher performance and are about half the size of Gen 4. Both Gen 5 and Gen 4 are far superior to the best available MOSFET
Gen 5: Higher Performance - 200 V FETs
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• Monolithic Half Bridge • Integrated FET and low side driver • Integrated half bridge with level shiC and drivers
• Monolithic Buck IC
eGaN Integrated Circuit Roadmap
12 APEC 2017
First Generation Integrated Circuits
100 V 4:1 Ratio Monolithic Half Bridge
13 APEC 2017
79 80 81 82 83 84 85 86 87 88 89 90 91 92
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Fourth Generation eGaN FET
14 APEC 2017
79 80 81 82 83 84 85 86 87 88 89 90 91 92
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
GaN Circa 2015
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
Monolithic Half Bridge
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Now Lets Apply the Technology to New Applications
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Wireless Power
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Wireless Power – Beyond the Cell Phone
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Wireless Power FETs and ICs
0
2
4
6
8
10
12
14
16
18
75
80
85
90
95
100
0 10 20 30 40 50 60
Del
iver
ed P
ower
(W)
Am
plifi
er E
ffici
ency
(%)
Reflected Resistance (Ω)
Effect of Synchronous Bootstrap FET
o Silicon Bootstrap Diode o eGaN Bootstrap Diode
eGaN Devices • Discrete • Half Bridge • Half Bridge Plus Bootstrap
19 APEC 2017 19
LiDAR
20 APEC 2017
Autonomous Vehicles “See” with LiDAR
21 APEC 2017
Laser Driver FETs and ICs for LiDAR
1 ns/div
vdrain (2V/div)-id (2A/div)
EPC2040
Custom LiDAR IC
EPC2040
22 APEC 2017
eGaN Integration Roadmap
LiDAR IC
Monolithic Half-Bridge
IC Discrete
Envelope Tracking IC
Wireless Charging
IC Power SoC
2010 2014 2015 2016 2017…
DC-DC IC
23 APEC 2017
• Due to GaN technology, new applica8ons are emerging
• Improved GaN technology and increased integra8on will accelerate adop8on in end markets
• GaN Technology is following a new “Moore’s Law”
Summary
