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Molecular SpintronicsPhysical Chemistry using Spin-Orbit Interaction
Research Center for SpectrochemistryJun Okabayashi [email protected]
2020. 5. 22 物理化学特論 II
1
Spinelectronics (Spintronics)
transport
light
Spin-dependentdevices
Magnetism Semiconductor
Opto-electric devices and circuit
Quantum computing
Quantum communication
Optical isolator
Quantum calc. Sensor
Non-volatile memory
Spin Adding novel functionalities
Spin controllingCarrier controlling
Light controlling
spinstorage Amprifer
2
What spintronics had done ? What is next?
Prof. A. Fert Prof. P. Grunberg
Novel prize in 2007
Discovery of giant magnetoresistance(GMR)(1986)
HDD with large memory size
Industry of MRAMHigh density HDD
Tunnel magnetoresistance(TMR)(1994)Tohoku univ. Prof. Miyazaki
What is next ?
Spin RAM
Large size storage
Quantum computor
Spin optical memory
Spin transistor
Spintronics with physical chemistry
GMR
3
Orbitronics
Giant Magneto Resistance (GMR)
Baibich et al.: PRL 62 (1988) 2472
4
5
Tunnel magnetoresistance (TMR) using Magnetic Tunnel Junction (MTJ)
Parallel Anti-Parallel
F I F TMR is a fundamental principle for non-volatile memory.
Novel electronics without dissipation by spin currents
Charge current Spin current
Devise design using spin torque and domain wall motion
Spin-Hall effect (SHE)
Conduction is independent on lattices.
I↑+I↓ I↑- I↓
Magnetic field(SOI)
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Electric current
Spin current
Motion of spin Spin dynamics
No energy dissipation !
Electric current and spin current
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Information transfer using spin wave
Spin wave transfer using insulator Y3Fe5O12
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MRAM
Manipulation of information using write and read linesmagnetic layer: non-volatile
TMR devices connected on the transistor
10
Magnetization reversal using spin injection!
Not magnetic field but current or voltage can be utilized for spin controlling!
Field
Current
Magnetic field writing MRAM
Current
Spin injection type MRAM (SPRAM)
10
8
6
4
2
0
Writ
ing
curr
ent (
mA
)
0.01 0.1 1Memory cell size (µm)
10
8
6
4
2
0
Writ
ing
curr
ent (
mA
)
0.01 0.1 1Memory cell size (µm)
MRAM
Gbit
107 A/cm2
SPRAMMbit ~kbit
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Magnetic Random Access Memory (MRAM)
新しい概念による動作の創製 (たとえば、核スピン利用)
MRAM
高品質TMR素子開発
Field
Current
DRAM SRAM Flash FeRAM MRAM
データ保持機構 電荷 電荷 電荷 誘電分極 磁化
不揮発性 × × ○ ○ ○
読み出し形式 破壊 非破壊 非破壊 破壊 非破壊
読み出し時間(ns)
30 3 20-120 30-200 10-50
書き込み時間(ns)
30 2 1×106 30-200 10-50
書換え可能回数 >1015 >1016 106 1010 >1016
セルサイズ 8 F2 70 F2 4.4 F2 80 F2 10 F2
容量(b)/D. R. (µm)
25 M/
0.175
4 M/ 0.25
1 G/
0.1632 M/0.2 1 M/0.6
用途PC main
PC携帯buffer
携帯電話memory card
IC card 汎用
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12
Spin-Hall effect (SHE)
Magnetic field(Spin-orbit interaction)
Spin Hall Effect
By using spin orbit interaction, spin distribution changes without magnetic field.
Y. Kato et al. Science 306, 1910 (2004).
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The scales of less than spin diffusion length are required for spintronics devices because spins are not conserved and scattered.
Charge
Spin
Spin diffusion length < 10 μm
:Charge conservation
:Spin scattering by HLS
Ranges where spins operate
Quantum infrmation
• Nanoscaled fabrication for spintoronics14
Future in SpintronicsInterfaces between magnetic layer: spintronics field(ultra-high density recording media, low energy consumption)
Interfacial spin-orbit coupling -> Spin-Orbitronics
What is the next ?-> Quadrupoles
磁性金属
非磁性金属
In-plane Out-of-plane漏れ磁場なし、熱安定性よし
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Slater-Pauling curves
Three important points in Slater-Pauling curves;Less than half : bcc, increased magnetic momentsMore than half: fcc, decreased magnetic momentsWhat is the origin of the branch ?
Electron number
Mag
netic
mom
ent (
u B)
17
Graphene Spintronics
グラファイト1層からなる2次元層 バンド構造が特異的:Schrodinger方程式ではなく、Dirac方程式に従うスピン拡散長が長いのが利点
高い移動度
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Graphene is consisted by single layer.High mobility in light mass of carbon
• Schrödinger equation (non-relativity)
• Relativity formulation
22( ) ( )
2ri r
t mψ ψ∂
= − ∇∂
2
2pm
ε =
it
ε ∂↔
∂ p i↔ − ∇
2 2 2 2 2 2( ) ( )x y zp p p m ccε
+ + − = −
it
ε ∂↔
∂ p i↔ − ∇
?spin
19
From molecular orbitals to band structures
熱との戦い
From Intel web pageFrom wikipedia
Tran
sist
or c
ount
s on
circ
ular
chi
ps
Year of introduction
Controlling of Spins and orbitals can be breakthrough.
20
Operation of MOS-FET
小長井誠 半導体物性 培風館Q26: Summarize the MOS-FET transister operation.
21
Single Molecular Magnet : Mn12
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Lapo Bogani & Wolfgang Wernsdorfer, Nature Materials 7, 179 - 186 (2008)
Application for Molecular Spintronics
23
Lapo Bogani & Wolfgang Wernsdorfer, Nature Materials 7, 179 - 186 (2008)
Spin transister using SMM
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What is synchrotron radiation ?
http://en.wikipedia.org/wiki/Synchrotron_light_source
Linearc
Storage ring
Acceleration ring
Synchrotron radiationBrightPolarizedTunable photon energy
Electron beam orbits are bent by magnetic field.
Generation of synchrotron radiation
25
Research Center for Spectrochemistry (RCS), The University of Tokyo
RCS has a beam line at Photon Factory in KEK.
BL-7A: Bending magnet is used. Energy ranges of hv=50-1300 eV are obtained.
Suitable for K-edge absorption for C, N, and O, L-edge absorption for transition metals, and high-resolution core-level photoemission spectroscopy
26
スペクトルセンターのビームライン
Spin-orbit interactionElectrons round the central nuclear, resulting the generation of currents.Spin-orbit interaction promotes to split j=l+1/2, j=l-1/2. Intensity ratios; l+1 : l Degeneracy; 2j+1電子が原子核の回りを運動することにより円電流を感じ、磁場を生じる。スピン軌道相互作用;j=l+1/2, j=l-1/2 に分裂
強度比;l+1 : l (縮退度2j+1の比に対応)
HSO=ζ(l・s)= ζ/2 (j2-l2-s2)
j=l+1/2; E(l+1/2) = 1/2 ζh2lj=l-1/2; E(l-1/2) = -1/2 ζh2(l+1)
ζ=0 ζ≠0
j=l+1/22(2l+1)
j=l-1/2
縮退度2l+2 (2j+1)
2l (2j+1)
1/2ζh2l
1/2ζ h2(l+1)
軌道 量子数 面積比l j
s 0 1/2 __p 1 1/2 1
1 3/2 2d 2 3/2 2
2 5/2 3f 3 5/2
3 7/2 4
1.0
0.8
0.6
0.4
0.2
0.0
-106 -104 -102 -100 -98eVBinding Energy (eV)
Si 2p2p3/2
2p1/2
27
Chemical shift of core-level spectra
Origin of chemical shift
∆EB=k∆q + ∆V - ∆ER
q : chargeV = Σqj/Rj :Madelung potential(Sum of static potential around ligand) ER : Relaxation energy(Screening of core hole)
Li - Li2O Fe compounds
Chemical Shift occurs by the valence states and photoelectron emission process.
表面分析技術選書「X線光電子分光法」(丸善)
価電子が結合に使われると内殻電子の原子核への束縛は強くなる。
プラス価数が増えると高結合エネルギー側へシフトする。
28
XPS of Polyethylene terephthalate (PET)
29
Induced Magnetism in Pt cluster30
Non-magnetic Pt atoms in clusters behave as magnets !(Surface effect)
C60-Co分子のXMCD測定
Y. Matsumoto et al. Chem. Phys. Lett. 470, 244 (2009)
31
32
Angle-Resolved Photoemission Spectroscopy (ARPES)
XPS of Graphene on Cu
ARPES of Graphene on Cu
José Avila et al., Sci. Rep. 3, 2439 (2013).
ARPES of Graphene 33
A. Varykhalov et al., Phys. Rev. Lett. 101, 157601 (2008).
Q:Explain about the principles of ARPES.
Q:Explain about the properties of graphene.
Topological insulators34
C60 Spintronics 35