HG-398A FU-1904 Printed in Japan <IP>

www.MitsubishiElectric.com/semiconductors/

Mitsubishi Electric Semiconductors & Devices Website

New publication, effective Apr. 2019.Specifications subject to change without notice.

2019

HVIC

HVIC

21

Mitsubishi Electric HVICs contribute to the high reliability of various power supply equipment by equipping them with various the protection functions.

1200V HVIC with Desaturation Detection for Power Semiconductors M81748FP

M81745JFP contributes to the high reliability and the optimized switching control of the voltage converter and the power semiconductor for automotive applications.

*1 RESURF: REduced SUrface Field *2 PolyRFP: Polycrystalline silicon Resistor Field Plate

HEV: Hybrid Electric Vehicle IPM: Intelligent Power Module RESURF:REduced SURface Field

M81748FP achieves the high durability of 1200Vthat is most suitable for AC400V inverter systems.●High durable 1200V rating that is applicable to an industrial use like AC400V inverter systems • The HVIC achieves low leakage current limited to a maximum 10uA of HVIC by applying a 1200V divided RESURF*1

structure to optimize its surface structure. • PolyRFP*2 structure of chip surface greatly enhances the durability.●High tolerance to switching noise helps achieve highly reliable inverter systems • High latch-up immunity (parasitic Vertical -PNP transistor action) realized with chip’s low-impedance buried layers.●Desaturation detection for reduced power loss reduction in power semiconductors • P-side and N-side desaturation detection prevents overcurrent thermal destruction of the power semiconductors by

using 1200V P-channel MOSFET. • The HVIC directly detects shorts and earth faults in power semiconductors on P-side and transmits fault signals to

N-side, shutting down systems. • Desaturation detection is sperior to the detection method which is used the shunt resistor for the power loss reduction

in power semiconductors.

PP

PP

P+ N

N

N+ Buried Layer

P+

P+

N+ N+NN N+

N+ N+

P-Sub.

P–

P– (Epi)

Low Voltage Region High Voltage RegionRESURF Isolation Region(Length:Liso)

Source

Micro-N+ Buried Layer

GateDrain

High resistivity Poly-Si (Spiral)

The cross section structure of 1200V Nch MOSFET that applied the divided RESURF*1 structure

Configuration example of HEV

Low-voltage battery

Automotive equipmentAir conditioner / Car navigation

system / Headlights

DC-DCconverter

Generator

High-voltagebattery

IPM

Engine Power splitmechanism

Generator,Motor

600V HVIC for Automotive Applications M81745JFP

HVICHalf Bridge

Driver×1M81745JFP

Application circuit examples of DC-DC converter

Innovative Power Devicesfor a Sustainable Future

High voltage floating circuit is built-in because it is a high side gate drive.Built-in signal transmission (level shift) function for transmitting signals to the floating circuitHigh side gate driver section has a high voltage isolation structure.Level shift section has a high voltage NMOS structure.

Main Features

HVICs

General-purpose inverters

AC servo/DC brushless motors

Fluorescent lights/HID lighting//LED lightingVoltage

translator

Induction heatingcooking stoves

Air conditioners/Washing machines

High-voltage integrated circuits (HVICs) are capable of directly driving the gates of power MOSFETs and IGBTs using signals input from microcomputers, thereby replacing power MOSFET and IGBT gate drivers that use pulse transformers and photocouplers. They are insulated by a level shift circuit inside the semiconductor chip. Since a variety of protection functions, such as power supply undervoltage, interlocking, input signal filter, and error output, are built into the IC, reliability of the power supply equipment is enhanced.Mitsubishi Electric has many half-bridge products that are commonly used in drive circuits. Our HVIC products comply with the European Union’s Restriction of Hazardous Substances Directive for electrical equipment, 2011/65/EU and 2015/863/EU.

●High reliability that is applied to the requirement of automotive application • Operating temperature range of -40 to +125°C. • UVLO (Under voltage lockout) circuit prevents

power semiconductor from the destruction by the power supply voltage drop.

• High-temperature and long-term burn-in tests assure high reliability.

• The HVIC contributes to the downsizing of the voltage converter by reducing the peripheral parts like the comparator and photocouplers in inverter system.

●High performance supports effective control of the voltage converters • The HVIC achieves low leakage current limited to

a maximum 1uA of HVIC by applying a 600V divided RESURF structure to optimize its surface structure.

• Easy to control the power semiconductors by matching the delay time of the high-voltage side and low-voltage side.

MCU

High-sidedrive circuit

Low-sidedrive circuit

High-sideMOSFET

Low-sideMOSFET

Attention points of HVIC use

The floating power supply method Configuration exampleof gate driver for motor

Bootstrap circuit method and basic operation

Electrical charge and discharge current route when HVIC is operated

The emitter/source potential of high-side IGBT/MOSFET referenced to GND changes to the voltage of the HV terminal from 0V when operating the application. Therefore, to drive high-side IGBT/MOSFET, the power supply of the high-side drive circuit of HVIC should have potential which is higher by VBS than the emitter/source potential of high-side IGBT/MOSFET. One of the methods to apply this voltage is the floating power supply method. Fig_right shows the example of the floating power supply method.

Bootstrap circuit method is used in place of the folating power supply method. The bootstrap capacitor(C1) is charged through the resistor(R1) and bootstrap diode(D1) by VCC, and the high-side drive circuit of HVIC is driven by the voltage of the capacitor(C1). Fig_right shows the example of the bootstrap circuit method.

High-sidedrive circuit

Low-sidedrive circuit

High-sideMOSFET

Low-sideMOSFET

High-sidedrive circuit

Low-sidedrive circuit

High-sideMOSFET

Low-sideMOSFET

Fig_right shows the electrical charge and discharge current route of C1 when HVIC is regularly operated.

■Setting of bootstrap capacitor (C1)

To drive high-side MOSFET, the bootstrap capacitor is charged by turning on low-side MOSFET.The inrush charging current is from the charging path on the rightID=(VCC/R1)e-t/(R1・C1) from the initial condition t = 0ID=VCC/R1

VC1 is shown below. (VF:Voltage between D1 terminals, VDS:Voltage beween drain and souce of low-side MOSFET)

VC1=VCC-VF-VDS・・・(1)

Initial charge and the voltage between bootstrap capacitor (C1)

The capacitance value C1 is shown below. (T1:Maximum on-time of high-side MOSFET, IBS:High-side drive circuit consumption current of HVIC, ΔV:Electrical discharge allowance voltage between C1 terminals)C1 = IBS × T1 ／ ΔV + margin ・・・(2)

IBS changes depending on gate capacitance of MOSFET and carrier frequency.　And （1） and （2） expression are simplified. So please set the capacitance value C1 based on evaluation of your system.

Simple calculation of bootstrap capacitor (C1)

Discharge route

Application circuit examples

MCU

[Half Bridge Driver]×3or

[3 Phase Bridge Driver]×1or

[3 Phase High side Side Driver]+[Low Side Driver]

MCU [Half Bridge Driver]×1

MCU [Half Bridge Driver]×1

Configuration example of gate driver for IH cooking heater

Configuration exampleof gate driver for DC-DC converter

Heating coil

Floating power supply

HVIC

HVIC

HVIC

HVIC

HVIC

HVIC

Floating power supply method

Bootstrap circuit system

Electrical charge and dischargecurrent route when HVIC is operated

Charge route

1200

1200

1.0

2.0

InputSignal

InputSignal

UV,IL,NF,SC,FO,FORST,FOINM81738FP

M81748FP2

2 4th

4th

4th

1

1×2

Half Bridge 3rd

Type nameNumber of

inputsignals

Number ofinput

signals

Number ofinput

signals

Device drive systemPackage outline

Internal functionDead timecontrolGeneration

Floatingsupply

voltage[V]Output current

[A](typ) Package type Number of terminals Column gapof mount pad（mil） Lead pitch（mm）

SSOP

SSOP

24

24

300

300

0.8

0.8

★★：Under Development■1200V floating supply voltage

UV,IL,NF,DESAT,FO,CFO,FOIN,SS

Number ofinput

signals

24

24

1.75/-0.8

1.75/-0.8

－

－

M81764FP

M81762FPDual Low side

Single Low Side 4th1

4th1×2

■24V floating supply voltage

DESAT： Desaturation

High activeUV,SC,FO,CFOHigh activeUV,SC(×2),FO,CFO

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

0.2/-0.35

0.2/-0.5

0.2/-0.35

0.2/-0.35

0.2/-0.35

0.5

1.0

2.5

3.5

0.2/-0.35

3.5

3.5

0.5

3.25

0.2

UV,IL,NF

UV,IL

UV,IL

UV,IL,NF

UV,IL

UV,IL,SD

UV,NF

UV,IL,NF

UV,IL,NF

UV,IL,NF

UV

UV,SD

UV

M81749FP

M81775FP

M81736FP

M81776FP★★

M81747FP

M81735FP

M81774FP

M81770FP

M81767FP

M81734FP

M81740FP

M81737FP

2×3Ф3 Phase

Half Bridge

4th

Dual High Side

■600V floating supply voltage

UV,IL,SC,FO,CFO

M81747JFP(for automotive)M81767JFP★★(for automotive)M81745JFP(for automotive)

UV,NF,SC,FO,FORST,FOIN

MEMO

InputSignal

InputSignal

InputSignalInputSignalInputSignal

InputSignal

InputSignal

InputSignal

InputSignal

InputSignal

InputSignal

InputSignal

Internal

Internal

InputSignal

SSOP

SSOP

SOP

SOP

SOP

SOP

SSOP

SOP

SOP

SOP

SOP

SOP

SOP

SOP

SOP

24

36

8

8

8

16

24

16

8

8

8

16

8

8

16

300

450

225

225

225

300

300

300

225

225

225

300

225

225

300

0.8

0.8

1.27

1.27

1.27

1.27

0.8

1.27

1.27

1.27

1.27

1.27

1.27

1.27

1.27

SOP

SOP

8

16

225

300

1.27

1.27

Line-up of HVIC

Type nameDevice drive systemPackage outline

Internal functionDead timecontrolGeneration

Floatingsupply

voltage[V]Output current

[A](typ) Package type Number of terminals Column gapof mount pad（mil） Lead pitch（mm）

Type nameDevice drive systemPackage outline

Internal functionDead timecontrolGeneration

Floatingsupply

voltage[V]Output current

[A](typ) Package type Number of terminals Column gapof mount pad（mil） Lead pitch（mm）

<Term>

For details of internal functions and package outline, please refer to the data sheet of each product.

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