MIL-STD-701N 31 JANUARY199o SUPERSEDING MIL-S7D-701 M …everyspec.com/MIL-STD/MIL-STD-0700-0799/download... · MI L-STO-701N FOREWORO 1. Thfs ilitary standard is approved for use

I NOT MEASUREMENTSENSITIVE I

MIL-STD-701N

31 JANUARY199o

SUPERSEDINGMIL-S7D-701 M9 JUNE 1986

MILITARY STANDARD

11S7SOF STANDARD

SEMICONDUCTORDEVICES

I

I AMSC NIA

, DISTRIBUTION STATEMEFJT A.

Fsc 59GP

“Approved for public release; distribution Is unlimited.

.

Downloaded from http://www.everyspec.com

MI L-STO-701N

FOREWORO

1. Thfs ❑ilitary standard is approved for use by all Oepartme”ts and Agencies of the Departmentof Defense.

2. Beneficial .a5ents ( recamnendations, additions, deletions) and any pertinent data which maybe of use in improving this document should be addressed to: Oirector, Space and Naval WarfareSystems Comnand, Department of the Navy, AT7N: SPAU4R 8111, ‘Washington, OC 20363 by using thesel f-addressed standardization Document Improvement Proposal (DO Form 1426) appearing at the endof this document or by letter.

ii


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MI L-STD-701M

TABLES - Contt nued

TAKE XVxv]XVIIXVIIIXIXxxXXIXXIIXXIIIXXIVxxvXxviXXVIIXXVIIIxxixxxxXXX1

FIGURE 1

Light emitting diodes ----- ---------------Thyristors (silicon controlled rectifiers)- - - - - - - - - -Optically coupled isolators - - - - - - - - - - - - - - - - -NPN low-power transistors - . - - . - . - . - - - . - - - . -PNPlow-power transistors --- ---------------NPNpower transistors ----- ---------------PNP power transistors ----- ---------------RFtransfstors ---------- --------------Opal transi stora (dlfferentf al amplifier) - - - - - - - - - -Dual transistors ---------- -------------Darlington transistors ----- ---------------Unijunctf OntransistOrs ----- --------------Junction field effect transistors - - . . . - - - - - - - - -Low-power chopperMOS FET, power- -Numerical 1 i stingNumerical 1 i sting

Case outlines - -

transistors ----------- . . ..-. ---- ----- ----- . . . . . --

ofdevice typea -------- ------ofthyristors -------- -------

FIGURE

----- ----- ----- ----- -.

Page

21

;:

::

:!

H30313233343536-4041

12

iv


MIL-STD-701N

1. SCOPE

1.1 Sco e.+

This standard establishes the requirements for the selection of semiconductordevices use fn the design and manufacture of mil ftsry equ{pment.

1


2.

2.1 Government documents.

MI L-STD-701N

APPLICABLE 00CUMENTS

2.1.1 S ecificatton. The following specification, forms a part of this specification to theextent sp~n. lJ”less otherdse s.pecifl.?d, the issues of these documents shall be those1 isted in the issue of the Department of Oefense Index of Specifications and Standerds (0001SS)and supplement thereto, cited in the sol icitation.

SPECIFICATION

MILITARY

MI L-S-19500 - Semiconductor Devices, General Specification for.

[Unless otherwise indicated, copies of federal and military specifications, standards, andhandbooks are available f mu the Naval Publications and Forms Center, (A17N: NPOOS), 58o1 TaborAvenue, Philadelphia, PA 19120-5099. )

2.2 Order of precedence. In the event of a conflict between the text of this document and thereferences ctted herein, the text of this document takes precedence. Noth$ng in this document,however, supersedes applicable 1 aws and regulations unless a specf fic exemption has been obtained.

—


MIL.STD-701N

3. DEFINITIONS

3.1 Definitions. The terms’ used in this standard are defined in MIL-s-19500,

3


MI L-STO-701N

4. GENERAL REWIREWNTS

4.1 x. The purpose of this standard {s as follens:

a. To provide equipment designers and manufacturers with 1 f sts of semiconductor devicesconsidered to be standard for military applications.

b. To control and minfmize the variety of semiconductor devices used by military activitiesin order to facilitate effective logistic support of equipment in the field; to maximizeeconomic support of, and to co~er.trate t~rovemant on, production of the semiconductordevices lfsted in this standard.

4.2 Selection of semiconductor devices. Semiconductor device types must be selected from thosetypes 11 steal in this standard. Th e variety of sedconductor devices used i n any militaryequfpment shal 1 be the minimum necessary to provfde satisfactory performance.

4.3 Use of semiconductor devices.

4.3.1 Controlled characteristics. Satisfactory equipment performance shall depend only on asemiconductor device characteristic which is control led by the applicable MIL-S-19500 detailspecification.

4.3.2 Correlation of circuit requirements and deteil specification test conditions. When anappl icatfon condit ion varies widely from the detail speci f i cation test condition(s), i t shal 1 bethe responsibility of the contractor to establish satisfacto~ correlation between the circuitrequi remants and the detail specification requirements.

4.4 Criteria for inclusion in thts standard.

a. The semiconductor device shal 1 be considered by representatives of the mil f tarYdepartments, the best available type for current application.

b. Continued availability of the semiconductor device shal 1 be reasonably certain.

c. The semiconductor device shal 1 have an approved military specification.

4.5 Lists of semiconductor devices. Tables included herein list the ratings and primaryelectrical characteristics and eppl icable specification number for al 1 semiconductor devicesapprOved es standard fOr use in the design and manufacture of military equipment. (Completedetailed requirements for semiconductor devices 1 isted in this standard are covered in theaPPl fcable deteil specification. ) Al 1 devices 1 isted herein are sil icon types except for thedevices listed in table XIV.

4.5.1 TX, TXV, and S types. Only the JANTX, JANTXV, and JwS versions of semiconductor devicetYPes 1 i Steal herein are approved for “se. The prefix J~TX fs used on devices which have beensuhnitted to and have passed special process-conditioning, testing and screening and the prefixJAt4TXV is used on devices which have been submitted to a visual precap inspection i n addition tothe process-conditioning, testing and screening. The JANS prefix .is used on devices which havebeen subject to special certification, process-conditioning testing, screening, precap visual ,radiography, particle tests, and other tests for space flight quality level.

4.5.1.1 Dash one (-1) parts. Iihere dash one ( -1) parts are available on the detailspecification and listad on ClFL-19500, they shal 1 be considered to be the preferred types.

I


I I

I4.5.2 Reverse polarity types.

1 isted herein, are also approved

MI L-STO-701N

The reverse polarity versions of semiconductor device typesfor use.

4.5.3 Surface mount. Surface mount versions of devices signified by ‘U’ sufffx are alsoapproved for use.

4.6 Conflict of data. In the event of conflict between the technical description ofsemfconauctor devices Tf steal in thfs standard and the appl icable specf ffcatlon, the specificationshal 1 govern.

I

I


MIL-STD-701N

5. DETAILED REQUIREMENTS (not applicable).

6


(This sect<on contains information of ais not mandatory. )

6.1 Oimensfons are fn fnches.

MIL-STD-701N

6. NOTES

general or explanatory nature that may be helpful, but

6.2 Metric equivalents are given for general information only.

6.3 International standardization agreettents. Certain provisions of this stsndard are thesubject or international standardization agreemsnt NATO Electronic Parts Reconsnendatfon (NEPR)19. When revf sion or cancellation of this standard is proposed which wil 1 affect or viola@ theInternational agreement concerned, the prep.srf ng activity will tdke appropriate reconciliatoryaction through international standardization channels, including departmental standardizationoffices, if raquired.

6.4 Parameter values. Every reasonable effort is made te f nsure that thfs standard 1 ists theuast recent parametar values for the devices 1 Isted. However, users are cautioned to verify al 1values agal”st the current I-Wi SiO” of the appl Icable de~f 1 ~pecf ffcati~”o

6.5 I)ual ffled products 1 fst. Scnie of the device types 1 isted in this stendard nay not be1 isted on QPL 19500 Th e preparing activity ❑ay be contacted to obtain the up-to-date status ofthe 12PL. (Se; proc~dures and notes in QPL-19500. )

6.6 Case outline. ’94’ In the case column indicates fnclusfon of a surface mount caseconff uration on

1the specification. Case dimensions must be obtained from the specification but

‘ S44’ n this standard does not guarantee QPL avaf labil ity.

6.7 Subject terms (key word) 1 istf n$.

Semi conducter deviceOf odeRectifierTransistorThyrf ster

6.8 Changes from previous Issue. Marginal notations are not used in this revision to identifychangea with respect to the previous issue due w the extensiveness of the changes.

7


MIL-STD-701N

TABLE 1. Switching diodes [lf steal in order of Increasing trr).

I Oevlce i Time iVRkMivF~t IF ~ IR at VRM I i c i Case lSpecifi- IItrr(max) ~[~ dd~

\ n%r ~ (ns)I IF to IR I(max) I out- I cation I

1 I \[pF) ~ line lMfL-S- I

I I 1 M;,::”clatit’!I 19500/ I

I I III I

I I I II I I I I I I I1 r11 N4454-1 i11 N4153-1 i11N4150-1 II11N4148-I !I 1N4938-1 I11 N5711 1/111N5712 T/I11 N5719 ~/111N6638 S/I11 N6642 5/111N6643 ~/\

4.04.04.0

5.050.0

$;T/-4.5

:::

I :: IOIJOI ;: I :“;5 I

~50++3qo:ll

17511. OI1OIO.5II 175 I 1.0 I 100 I 0.1 I15011.011510.2111611 .o135io.15iI 100 I 1.0 I 100 I 0.25 II 125 I 1.1 I 2CQ I 0.0251I 75 I 1.2 I 100 I 0.0251I 50 I 1.2 ~ 100 ~ 0,0501II I

10050

100

100100200100

15405075

iIF.1~.10mAi2.OlIF. IR.10us412.0IIF. 1 .1 0M41 2.5I t0280mA 1t IF .IR. lonb414. olIF. IR.lOtij 5.0

i

II

!

003500350035

00350035003500350035

I

I

—

144337231

116169444445443578578578

Schottky barrier type.Minority carrier lifetime eauals 100 D4C0SeC0ndS. maximum.PIN tYDe.Effec~i ve carrier 1 ifetfme equals 100 ns, ❑inimum.1N6638, 1N6642, and 1N6643 are full area high temperature metallurgically bonded constructionwhich are i!nnune by design to intermf ttencles caused by thermal cycling and vibration andshould be used fn tactical , airborne, missile, and space flight applications.

TA6LE 11. h.ial -1 ead puxer rectifiers.

1 I I I I I I II Oevfce I VRW ~ maximum I

rMaximum ~ Maximum I Maxi ❑um 1 Case I Specf ffcation I

I type II n!mber I

I lR at VR~

I 11I at IQ-C ~ (l!? ~ O“tlfne \ “lL-S-195W’ \

~iV Mat IF Iat 25”Clat TA. I FWO I I

I

/I I

I“(t I*(A I I 100 CllcycavglI ](V pk)l pk) I pk) I(PA dc)~(uA dc) ~ (A dc) I / /

.1(V dc)l(A dc)l1 I I I I I I! IN5551 I 400 1*1.2 I*9 1/ I 1.0 1 75 I 3.0 1 17s ] ::;: I 420I 1N5552 I 600 1*1.2 l*9T/ I 1.0 I 75 I 3.0 ~ 175 420I 1N5553 I 800 1*1.3 I*9 T/ I 1.0 I 75 I 3.0 175 I 00204 42o /\ 1N5554 j10Cf3 1*1,3 \*9 ~/ I 1.0 ~ 75 I 3.0 I 175 I 00204 i 420

II I I I I I I I

1 1N5616 I 400 I 1.2 I 1 10.5 125 I 1.0 ! 200 I 00204 I 427 I11 N561816D0 11.211 10.5 125 I 1.0 I 200 I 00204 I 427I 1N5620 I 8@3 I 1.2 I 1 I 0.5 I 25~ 1N5622 ~1000 \ 1.2 ~ 1 1 0.5 I 25 ~ ~:~ ~ ~~~ ~ W;% ~ t$; i~1 Duty cycle ~ 2 percent, $ . 1/120 s.

8


MIL..SrD-7olN

TABLE II 1. Fast-recove~ rectifiers (l fsted fn order of trr. )

1 I I II Oevfce I Recovew lVR~ I I @tI type I tim\ number ~ trr

IT ‘?5CI l+ Ioo”c

/ !I I

! / (ns) ~ (V) ~ (Al

1N5804 I 25 11001~l&~\ ;: ~;so~ :

~

1;[::!:1 :: [:: ~ ~I 1N5816 I 35

1N63D4I

I 1N6305 I :8150:70I 100 I 70

I 1N63C4 I 50 I 150 I 70~I 1N5615 I 150 1I 1N5417 I 150 12COI 3I 1N5617 I 150 14001

~I 1N5418 I 150

I Wl:i 1 % I%’ 1 ::;

I 1N3893 I 200I IN3913 I 2U3

I 400 I ●12I 400 I ●3O

I 1N5419 I 250 I Soo I-I IN5619 I 250I 1N5621 I 3W I 800 I ;I 1N5420 I 4C4) 16WII 1N5623 I 500 11000 I ;

Max reverse currentfx2;ts f et rated VR at

125 i 5.0 i250 I 10.0250 I 10.0 i 2%

1000 i 25.0 i1000 I 25.0 I

~

50 I 1:0I %

~50 i 1.0 i

I 25.0 I w&’Ri I 80.0 I ●l@o(y

~

300 I eo:o I ●lomo

~

NOTE: Ulen finel Ized the 1N6620-6631 should be addad to this table.~/ Straight and reverse polarity types avaflable.

I

I

I ICase I Specification

outline ~ MI L-S-19500/ I

!

I/

~

Axial I 477 /Axial 1 477

~

1/ 004 I 478 Ir/ D04 I 478-i-+1( 005 Irf 005 I 550 Ir/ D05 I 550~

Axial I 411 IAxial I 429

~411

1/ DIM I 304 Irl 005 I~1/ 004 Ir/ 005 I ;~ I‘Axial I~

429Axial I 429 IAxial I 411Axial I 429 /


I

-I 1N1202Ai 1N12WA

I 1N1206A

~ ;!%;:1

1’ 1N1186I 1N1188I 1N1190I 1N3766I 1N3768

141L. STO-701N

TABLE IV. Power rectf fers ( 1 isted in order of maxfwm dc output current).

12 i 20012 I 40012 I 60012 I zoo12 I 1000

35 i 20035 I 40035 I 60035 I 80035 I 1000

w:;:s :Maxfmm IR at i Case i Specl fication ;

VRW I outline { MIL-S-19500/ II

r t~ TC ~5°C

I rI TC 150”C I / I

500 i 250 VA i 3ti500 I 25o VA

i 005 i 297I 3ml

500 I 25o VAI 005 I 297

I 3A500 I 250 UA

I 005 I 297I 3ml I 005 I 297

500 I 250 UA I 3MA I 005 I 297

TASLE V. Schottky power rectifiers.

i Oevlce ~ ~ i 14axflnu?l i !4wimum i II IR at VRW I 10

i

I nl%r ~ VRHM I Maxfmum II VFM af IFM

I Maximum i Case !I I I

IITop

Iat 25”C\at TA 175”CITC . 125 Iloutline~

I I* Tc .115 I . I!(V pk)!*(V

II*(A 1(M4 pk)l (IIA pk) I

1/

I pk) ~ pk) I ~(c) ~/I

I I I I I I I1N6391 I 45 I .68 I 50 I 15 I

~ 1N6392 1400 I

~45~.82~120~20 ~ 6013

22.5 I 175 I 004 I 553 II %4.0 I 175 \ 005 I 554 I

II

Specfficationl141L-s-19500/ I

I

I

NOTE: When qualified, the 1N6492 should be added to this tdble.

10


TABLE VI.

HIL-STD-701N

Hfgh-vol tage rectf ff er dssembl fes ( 1 f steal f n order ofincreasing reverse vol tc.gel.

7 1 1 I I I I I I iI Device I VR~ ~(vV~c)~ 10 (IMX) II type

I Maxfmum IR I Case I Specification Iat TA

I numberlIF Mat ~TA

1/1 I l/i20 s ~ W;W? /%j”*L-s-19w0’ 1I

I ~ (MA) \ “cI (uA) I

I (A) I (“c) ~ I II

I I I I I 1-1N3644 1500 5.0 I 254 I 25 I 14

~;~:fi~ ]2000~ 5.1312501 25 I 14 ~;~ j11/1 279lT/1 279 I

250015.012501 :: ~ ~~I 1N3647 I 3000 [ 5.0 \ 250 ~ ~2515

lT/1 279;Tll 279 /

I

~/ Cylindrical .315 inch X .090 inch maximum.

NOTE : The fol lowing new specification wf th thebe added to this table when qualified:

MI L-S-195L!WS75 1N6512 through 19MlL-S- 19500/576 1N6520 through 27MI L-S-19500/S77 1N6528 through 35

TA61E VII.

1 I I (

included devices are not yet qual i ffed. They shO”ld

Hfgh current, full wave, bridge rectifiersi steal fn order of increasing 10.

~Phase ~ Oev;⁣pe ~ VR~ ~10 at T55”!

I I ~ T[ =(~f”ClMIL-S-19500/ I

13 ~~~~~c ~ J%e ~’pecificatio”lIT.55C

/I I

1 I I iA) (pkl !I r

Single )419S00/469.01 200 I 10 I 100lSinglelf419500/469-02 I 400 1 10

lSee figure 1 I 469 I100

(Single lU19500/469-03 I 600 I 10469

100:

I 469 IlSinglel M19500/469-04 I 800 I 10 100 ; 469 II Single lM19500/469-05 I 1000 I 10 100 I 469 I

I IlSinglel SPA25lSinglel sPB25

I 100 I 25 15012001

]See ffgure 1 I 446 I150

lSinglel S?C25 14001 :: I :S$ I :;lSinglel 5Po25

I16001 25 446 I

l~;~ ~~~:~$&: ~ ~;~ ~ z, ~ ::; [See ffgure I :,E3j::

lThree lM19500/423-03 I 600 I 150 I

11


MI L-SrD-7olN

Oevice types 469-xx

1.

Inches nm.370 9.39.500 12.70.51 12.9.570 14.48.750 19.05.77 19.5.82 20.4

1.06 26.91.144 g;. f2.28 .

FIGURE 1. Case outlines.

12

Oevice types SP%?5

A


MI L-STD-701N

TABLE VIII. Multiple diode arrays ( individual diode ratings).

Oevice i 10type I

number I T . 25”cI ?M4 dc)

1N6511 i 3001N6101 I1N6506 i1N6507 I1N6508 I1N6509 I

8765

i I I I I I Iv~~ IVF at I!R at it,, ~ CT i Outline i Specification i

II at IV atllbOm4 14~Vdc \

~ sch~:ic ~ MIL-s-19500/ I

I (V dc) I(uA dc) ~ ins) ~ (PF) I/

I

I I 1 [ 1

il.o~o.li5i4i;; I

OIP i 474 I15141120 14 i

% I i 120 18 i6060 /

120181! 120 {81

I

I I I I

4 321

HHHH9 10 11 12 13 14 15 16

lN610i

@ @ @ @ @ ;;N&!;:~N;COMMON CATHOOE1N6506[OIPI

COMMON CATHODElN6!i07

(Q—@ @ @ @ :l!N;;::;:;;

COMMON ANOOE/COMMON CATHOOE1N650B(DIP)

B@87

& @ NO INTERNAL

OUAL COMMON ANODE/COMMON CATHOOE1N6509 (DIP)

(DIP) 1N6511(DIP)

13


MIL.$TD-701N

TABLE IX. Voltage reference diodes ( 1 isted t n order of voltage range).

I I I I I IDevice I Reference voltage I Voltage I Oynamic

type II Max. I (&e I Speciffcatlon

range I temp I impedancenutie r I r stability I ‘e~” ~ ;:;; / f41L-5-195m/

IVR)I

I &V(BR) ~ ZI hln 1 ‘A!!) I

Iatz I I I

I (v] I (v) I (v) [ (ohms) i (M) 1 (“c) 1’ I

1N821-1 I 5.90 I 6.50 [ 0.096 I 15 I 7.5 I 175 I 007 I 1591NB23-1 I 5.90 I 6.50 I 0.048 I 15 I 7.5 I 175 I 007 I 1591NE25.1 I 5.90 I 6.50 I 0.019 I 15 I 7.5 I 175 I 007 I 1591NB27-1 I 5.90 I 6.50 I 0.009 I 15 I 7.5 I 175 I 007 I 159lN829-1 I 5.90 I 6.50 I 0.005 I 15 I 7.5 ~ 175 I D07 I 159

[ I ( I I1N4565A-1 I 6.08

II 6.72

I II 0.100 I 200 \ :.: I 175 I 007 I 452

1N4566A-1 I 6.OB I 6.72 I 0.050 I 200 I 175 I 007 I 452IN4567A-1 I 6.08 I 6.72 I 0.020 I 2001N456EA-I I 6.02 I 6.72 I 0.010 I 200

I 0:5 I 175 I 007 I 452I 0.5 I 175 I 007 I 452

1N4569A-1 I 6.08 I 6.72 I 0.005 I Zca I 0.5 I 175 I 007 I 4521NA570A.1 I 6.DB I 6.72 I 0.100 I 100 I 1.0 I 175 I 007 I 4521N4571A-1 I 6.08 I 6.72 I 0.050 I lW I 1.0 I 175 I 007 I 4521N4572A-1 I 6.DB I 6.72 I 0.020 I 100 I 1.0 I 175 I 007 I 4521N4573A.1 I 6.08 I 6.72 I 0.010 I 100 I 1.0 I 175 I 007 I 4521W574A.1 \ 6.c$ I 6.72 ~ 0.005 I 100 ~ 1.0 ~ 175 \ 007 I 452

I I I I I I I I1N3154-1 I 8.00 I 8.BD I 0.130 I 15 110.0 I 175 I 007 I 1581N3155-1 I 8.00 I 8.80 I O.O651N3156-1 I B.OD I 8.8o

I 15 110.0 I 175 I 007 II 0.026 I 15 ~\:.: I 175 I 007 I :!%

1N3157-1 I 8.04 I 8.80 I 0.013 I 15 I 175 / 007 / 1581“1

I i i I1N935B-1 I 8.55

I II 9.45

1N937B-1 I 8.55\ ;.L#

I 9.45I 20 I 7.5 I 175 I 007 I 156I 20 I 7.5 I 175 I 007 I

I O:OIB156

1N93BB-1 I 8.55 i 9.45 I 20 I 7.5 i 175 I 007 I 1561N939B-1 I 8.55 I 9.45 I 0.009 I 20 I 7.5 I 175 I 007 1 1561N94c8-1 I B.55 I 9.45 I 0.0037 ~ 20 I 7.5 / 175 I 007 / 156

I I I I I I I I1N941B-1 I 11.12 I 12.28 I 0.239 I 30 I 7.5 I 175 I 007 I 1571N943B.1 I 11.12 I 12.28 I 0.047 I 30 ~ ;.: f ;;: I 007 I 1571N944B- 1 I 11.12 I 12.28 I 0.024 I 30

~ 7:5 j 175 \ ::; 1157

1N945B.1 I 11.12 I 12.28 I 0.012 I 30 157

14


Ml L-SW- 701N

TABLE X. Voltage regulator diodes.

ivz i1

Device type number (1 isted by PT)I (nom) II (V dc)l

I

II Spect ficatfon PIIL-S-19500/ II I I I I

I 127 I 117 I 435 ~ 533 ~1 ~ 404 ; 356I I

I 272 ~1 / 124 ~1 ; 114 ~1 ;

l— —1I I r

~ 400 mUI I

400 MN w1500mU I 1.5 u 5H3/ I 10U I 10U I—— 50U I—-

/ i Axial : Axial ~ Axlal ~ Axial ~ Axial ~ Axial—1 ;I—1

I 004 11031

I 1.8 //

I 1N4614-1 II 2.0 II 2.2 I

i I 1N4615-1 I / / i / / /I 1N4616-1 I

I I I I I i r1 2.4 11 N4370A.1 I I 1N4617-11 1N6309 II 2.7 11 N4371A-11 I 1N4618-11 lffi310 II 3.0 i 1N4372A-11 i

/) IN4619-11 1N6311 I / i

I 3.3 11 N746A-1 I 1I 3.6 11 N747A-1 I

I 1N4620-1 I 1N6312 I 1N6485 I 1N6632 II 1N4621-1 I 1N6313 I 1N6486 I 1N6633 I /

I 3.9 11 N748A-1 I I 1N4622-1 I 1N6314 I 1N6487 I 1N6634 I 1N3993A I i 1N4557B I

I 4.3 11 N749A-1 I I 1N4623-1 i 1N6315 I 1N64B8 I 1N6635 I 1N3994A I I 1N4558B II 4.7 11 N750A-1 I1 5.1 llN751A-i I

I 1N4624-1 I 1W316 I 1N6489 I 1N6636 I 1N3995A I I 1N4559B II 1N4625-11 lN6317 I 1116490 I 1N6637 1 1N3996A 1 1 1N4560B I

I 5.6 11 N752A-1 I I 1N4626-11 1W318 I 1N6491 I 1N5968 I 1N3997A I I 1N4561B II 6.2 11 N753A.1 I I IN4627.1 I 1N6319 I lN44&3 I 1N5969 I 1N3998A II 6.8 I 1N754A-11 I 1N4099-1 I 116320 I 1N4461 I 1N4954

I 1N4562B II 1N3999A I 1N2970B I 1N2B04B I

I 7.5 11 N755A.1 i I 1N41OO-I I 1N6321 I 1N4462 I 1N4955 I 1N4000A I 1N2971B I 1N2B05B II B.2 11 N756A-1 I i 1N4101-1 I 1N6322 I 1N4463 ~ 1N4956 II 8.7 I 1

I 1N2972B j 1N28068 II lN4i02-11 I

I I I I rI 9.1 11 N757A-1 II 10.0 11N75BA-1 I

I 1N4103-1I 1M323 I 1N4464 I 1N4957 I I 1N2973B I 1N2807B II 1N4104-1 I 1N6324 I 1N4465 I 1N4958 I

I 11.0 II 1N2974B 1 1N2W3B I

11 N%2B-1 I 1N4105-1 I 11K325 I 1N4466 I 1N4959 I I 1N2975B I 1N2809B I

~ ;;.: \ 1N759A-1 11 N963B-1 I 1N4106-1I 1N6326 I 1N4467 I 1N4960 I I 1N2976B I 1N281OB I11 N%4B-1 I 1N4107.1 I 116327 I 1N4468 ~ 1N4961 I I 1N2977B I 1N2811B I

1 14:0 I 1 I 1N4U38-11 I I I I I

115.0 II

i 1N965B-1 I 1N41C9-1 I 1K32B I 1N4469 I 1N4962 I I 1N2979B I 1N2813B II 16.0 I ~1N966B-1 I 1N411O-1I 1N6329 I 1N4470 I 1N4963 I ~ 1N29BoB ~ 1N2B14B II 17.0 I I 1N4111-11

I I I I I I rI lB.O I 11 N967B-1 I 1N4112-1 I 1N6330 ~ 1N4471 \ 1N4964 I ~ 1N29B2B ~ 1N2816B II 19.0 I I 1N4113-1 1I 20.0 1 ] LN96@&ll 1N4114-11 1116331 i 1N4472 1 1N4965 ! I 1N29MB I IN281BB i

See footnotes at end of table.

15

“7


MIL-STO.701N

TAaE X. Voltage regulator diodes - Continued.

Vz Oevice type number (1 is ted by pT)(Ram);

I

w ,+ \T r. ... ,Specification MIL-S-195001

I I127 I 117 I 435 \ 533 ~1 I 406 ~ 356

I I I 1 I140UmU1400mH~=\5MmH~ &~~~/—_

22.0 i i iN969B-li lN4i15-li 1N6332 i IN4473 i 1N496624. o I 11N970B-1 I 1N4116-1 I 1N6333 I IN4474 [ 1N4%725. o I I 1N4117-11

27. o I 11N971B-1 ! lN4118-l\ 1N6334 ~ IN4475 ~ 1N4968I

28. o I I30.0 I

I 1N4119-1111N972B-I I 1N412U-1 I 1N6335 I 1N4476 I 1N4969

33.0 i ilN973B-li lN4121-li36. o I

i 1N4477 i 1N497011N974B-1 I 1N4122-1 I

39.0 II 1N4478 I 1N4971

11 N975B-11 1N4123-11 I 1N4479 I 1N4972I

43.0 I 11N976B-1 I 1N4124-1 I47.0 I

I 1N44B0 I 1N497311 N977B-11 1N4125-11

51.0 II 1N44B1 I 1N4974

11N978B-1 I 1N4126-1 I I IN4482 I 1N4975

56.o i ilN9796-li lti4~27-~i60.0 I

~ IN44B3 ~ 1N4976I 1N4128-11

62. o I 11 N9E!OB-11 1N4129-11 I 1N4484 I 1N4977

68.0 I 11N9BIB-11 lN4U0-li 1 IN44B5 I IN497875.0 I 11 N982B-11 1N4131-1182. o I

I 1N44B6 I 1N497911N9836-1 I 1N4132-1 I I IN44E7 I 1N4980

B7. o i I i lN4133-li i i91.0 I 11N9848-1 I 1N4134-1 I00.0 I

I 1N4488 I 1N498111 N9B5B-11 1N4135-11 I 1N44B9 I 1N49B2

II I

272 ~/ I 124 ~1 I 114 ~1 I

--+-+-+loll l~150wl—1004 10041;1

~ 1N29B5B ~ 1N2819B !I 1N2986B # 1N2B20B I

i 1N29BBB ‘I

I 1N2B22B i

I 1N29B9B I 1N2823B I

i 1N295UB i 1N2824B iI IN2991B I 1N2852B II IN2992B I IN2B26B I

i 1N2993B i 1N2827B iI lN2g958 I 1N2829B II 1N2997B I 1N2831B I

~ 1N299W ~ 1N2832B I

i lN30@lB i 1N2B33B i

i 1N31301B i 1N2834E iI 1N30U2B I 1N2B35B II 1N3003B I 1N2B36B I

~

I 1N3004B I 1N2837B II 1N3005B I 1N2B3BB I

See footnotes at end of table.

16


MIL-STD-701N

TABLE X. Voltage regulator diodes - !hntlnued.

1 I r

I Device type number (listed by PT)~(~% I

{;

II

I Specl fication t41L-S-19500/!

I-1 [ I 1 I~ 127 \ 117 ~ 435 I 533 ~/ I 406 I 356 272 ~j ~ 124 ~f \ 114 ~/ I

I

1 I I I I I ( I I (1400mN 1400mUl 400mU1500mU \ ~ \fl~/ I 10N I low I 50 H (

i l—l—l—l— l—l—l—li i kd. tl i Axial i Axf31 i Axial i Axial i Axial i 004 i 004 i T03 iI I1110.0 / 11 N986BJ1

I II 1N4490 ~ 1N4983 I

I~ 1N3007B [ 1N2B40B !

1120.0 I 11N987B-11 i I 1N4491 I 1N4984 I [ 1N3008B I 1N2B41B I1130.0 I 11 N988B-11 I 1N4492 I 1N4985 I I 1N30098 I 1N2B42B I

1150.0 I 11N9B9B-1 I1160.0 I 11 N990S-11

I 1N4493 I 1N4986 I\ 1N4494 I IN4987 I

I 1N3011B I 1N2B43B II 1N3012B \ 1N2B44B I

IIBn.o I I IN991B-1 I I 1N4495 I 1N4988 I I 1N3014B I 1N2B45B I

1200.0 I ]1N992B-11/220.0 I

I 1N4496. I 1N4989 I I 1N3015B I 1N2B46B II I I 1N4990 I 1

1240.0 I I I I I i 1N4991 i I I I

~/ These devices are thermally matthed, voldless, high temperature hard glass, ful 1 area❑etallurgical ly bonded construction and suf table for use in space flightand other high rel iabil f ty appl fcations.

2/ Reverse polarity device types available.~/ TL . 75”C, L .0.375 in.


TAB

LEX1

.Vo

ltage

.va

rfab

leca

paci

tor

diod

es[li

sted

inor

der

ofnc

inin

alca

paci

tanc

e)(a

llar

e0.

4u)

.

—


TAJL

EXI

I.C

urre

ntre

gula

tor

diod

esIP

T.6

00EM

).

II

I1

I1

II

Dev

ice

Ity

peI

Re$

lato

r1

Hi:l

l!llm

II%

fmum

‘1I

Max

❑um

f~

d:%

,I

Case

ISp

eclfi

catlo

n1

M::

&Jm

Iou

tline

~H

IL-5

-195

cWnu

mbe

rI

curr

ent

(*)

\at~

o;25

Vi

f$;~

e.I

knee

Ilim

iting

I

Ire

gula

tor

IIm

peda

nce

lat’T

.25V

Iat

‘I(.6

‘i

atv~

~~g~

.8[

~$en

tTc

.25

‘I

curr

ent

TcI

lat’T

.25~

I1.

II

1P(r

ein)

[Nce

II)/

(mu)

(in

n)

I-5

5;~O

C;25

°C~

25°C

I(v

olts

)I

~z,.;

;so

c~

II

I1N

5283

I0.

22I

25.0

2.75

I1M

5284

I0.

24+1

.35

I-0

.06,

+0.7

0I

007

19.0

2.35

;:E46

3

//

1N52

85I

+1.2

5I

.0.1

0,+0

.66

(00

70.

2714

.0/

1.95

I1.

00/

I-0

.10,

+1.1

5I

-0.1

2,+0

.58

I00

7I

463

1N52

26I

0.30

9.0

1.60

l.m46

3I

-0.1

5,+1

.05

I-0

.15,

+0.5

2]

007

1N52

87I

0.33

I6.

6i

1.35

i1.

00I

-0.2

0,46

3

1N52

88I

+0.9

5I

-0.1

6,+0

.47

I00

70.

39!

4.10

1.00

1.05

463

I-0

.30,

+0.2

2I

-0.2

0,+0

.38

I00

71N

5289

I0.

43;

3.30

I0.

870

I1.

05I

-0.3

2,+0

.75

I-0

.22,

+0.3

3I

007

463

1N52

90I

i0.

472.

7046

3

IN52

91I

0.S6

11.

SQ\

$%~

!:l!T

!$!:f

il:!

%’

$!!l!

!‘

‘t:1N

5292

I0.

621.

551N

5293

I0.

68i

1.35

~:::g

1:15

I-0

:45;

463

1N52

94I

+0:4

0I

:0:2

8:0.

751.

15+0

.12

I00

7I

I1.

20/

463

1N52

95[

0.82

1l.m

II

-0.5

0,+0

.35

I-0

.30,

+0.0

7I

007

10:

290

I1.

25I

-0.5

2,46

3

IN52

96I

+0.2

7I

-0.3

1,+0

.03

I00

7I

0.91

0.28

00.

240

I1.

2946

3I

1N52

97I

I-0

.56,

+0.2

0I

-0.3

2i

o.8m

I0.

205

1.35

I00

746

3I

-0.5

8,+0

.15

I-0

.34

1N52

98I

::fi

I00

7/

&\

;:$:

~;#

oi

!:!!!

!!5

!1!

:‘::

1\

‘;5

463

I00

7I

463

I00

7I

I00

746

3

0.54

01:

5546

3

;::I

1N53

020.

115

II

0.51

00.

105

I]

$;:

\.:g

I:0

:39

I00

71

-0.4

0/

463

1N53

03I

1.64

0.47

5I

0.09

2I

/~$

:I

-0.4

0I

007

463

I00

71

1N53

C4

I0.

420

0.07

4I

1:75

463

1N53

05I

;::/

0.39

5I

0.06

1I

1.85

I.0

.41

I-0

:75

I00

7I

463

1N53

06I

2.20

I-0

.42

I00

7I

W9

I‘:%

,1!:

i!2

:1

i;‘i;

;

1-0

.42

463

I00

7I

463

I$f

;\fi

~6

1N53

1OI

:::I

-0.8

10:

280

I0:

024

I2:

35I

-0.2

2I

-0:4

3

1N53

11I

3.60

I0.

265

0.02

02.

50I

-0.4

4I

007

463

IN53

12I

3.90

I-0

.83

I.0

.44

I00

7i

0.25

S0.

017

2.60

463

1N53

13I

4.30

i0.

245

i0.

014

/1

-0.8

42.

75I

-0.4

5I

007

I46

3

1N53

14I

I-0

.85

4.70

0.23

5I

.0.4

5I

I00

7I

463

0.01

2i

2.90

I-0

.86

II

-0.4

5I

007

463

I/


MI L-STD-701N

TAllE XIII. Transfent suppressor diodes (bidirectional).

MI L-S-195 W/516I I I r

Breakdown I Uorkingl maximum It3ximuelSeries voltage I peak I

i We ! v(BR) I volts elpeak surge ~

7

peak suqevoltage

I Wncurrent

Max/

lVM(wtg I II

vs~~1

IW

I1 ~/1 21 31 I 2131 ~.- --

1 I [ I I I I I I rI 500W I 1500M I Vdc I Vdc I Vdc I V(pkl I V(PK) I A(pk) I A(m) I

I lN6103A I 1N6139A I 7.13 I 7.87 I 5.7 I 11.2 I 11.2I 1N6104A I 1N6140A I 7.79 I 8.61

I 44.6 \ ~:~.~ I

I lN6105A I 1N6141A I 8.65I 6.2 I 12.1

I 9.55I 12.1

1 6.9 I 13.4I 41.3

I 13.4 I 37.3 I 111:9 I

~~~ j:g~ ~;;:; ~[:g I ::!1!$: i :::: ~ ::: \ ‘~:; ~I 9.1 I 16.9 I 16.9 I 29.6 I 88.8 I

1I I I

1N6109A I 1N6145A I 12.35 I 13.65I 1N611OA I 1N6146A I 14.25

I 9.9 I 18.2I 15.75

I 18.2I 11.4 I 21.0

I 27.5 I 82.4

I 1N6111A I 1N6147A I 15.20 I 16.20 I 12.2 I 22.3I 21.0 I 23.8 ~ ~;.j II 22.3 I 22.4 . I

I 1146112A I 1N6142A I 17.10 j ;;.;0I lf46113A [ ;N6;16 I 19.0

I 13.7 I 25.1I 15.2 I 27.7

1 25.1 ~ :;.; \ 59.8 I

I 1N6114AI 27.7

I 20.9 I 23:1 I 16.7 I 30.5 I 30.5 I 16:4 I 2:; II

lN6~15A I 1N6151A I 22.8! l~116A I 1N6152A I 25.7

i 25.2 I 18.2 I 33.3 I 33.3I 28.3 I 20.6 I 37.4

I 15.0 I 45.0 I

I 1N6117A ! 1N6153A I 28.5 I 31.5I 37.4

I 22.8 i 41.6I 13.4 I 40.1 I

I 41.6 I 12.0 I 36.o I

I l~l12A I 1N61.MA I 31.4 I 34.6I 1N6119A I 1N6155A I 34.2

I 25.1 I 45.7 I 45.7 I 10.9. I 32.8 I

I 1N6120A I 1N6156A I 37.1I 37.8 I 27.4 I 49.9 I 49.9I 40.9 I 29.7 I 53.6

I 10.0I 53.6

I 30.1 II 9.3 1 28.0 I

1N6121A I 1N6157A ~ &~ I 45.1 I 32.7 I 59.1 I 59.1 I 8.5 I 25.4

I M:%! ! %::% ,48:5 1%: ! %:: !%! ! %: 1 ;:; \ :?:! !

I 1M124A I 1N6160A I 53.2I

I 58.8 I 42.6 I 77.0 I 77.0I 1N6125A I Nk6161A I 58.9

I 6.5 I 19.5 II 65.1

I IN6126A I 1N6162A I 64.6I 47.1 I 85.3

I 71.4I 85.3 I 5.9 I

I 51.7 I 97.1 I 97.117.6 ~

I 5.1 I 15.4r

I 1N6127A I IN6163A I 71.3 I 78.7

I M:%

I 56.0 1103.1I IN6164A I 77.9 I 86.1 I 62.2 1112.8

! 103.1 I 4.8 II 112.8

14.5 1

I 1N6165A I 86.5 I 95.5I 4.4 / ;.; /

I 69.2 1125.1 I 125.1 I 4.0 .r

I !I:;YJI 1N6166A I 96.0 1105. O I 76.o 1137.6 .1 137.6 I 3.6 I 10.9 II 1N6167A 1104.6 1116.5

I 1K132A 1 1N616EIA 1114.0I 86.6 1151.3

1126.0 I 91.2 1165.1I 151.3 I 3.3 I 9.9 II 165.1 I 3.0 I 9.1 I

I lN6133~ I 1N6169A 1123.5 1136.5 I 92.8 1178.8 I 178.8 I 2.8 I 8.4 I

I %i%A I%% ~ig;”5 li~i”5 ~ i$g i%i i ;!~:i i ;:! \ ;:; \I

I 1N6136A I 1N6172A 1171 1189I IN6137A I 1N6173A 1190

I 136.8 1245.7I21O

I 245.7I 152.0 1273.0

I 2.0 I 6.1 [I 273.0 I 1.8 I 5.5 I

~/ Applies to both 500 H and 1500 M series.21 Applies to only S30 U series.~/ Applies to only 15c42 u series.

20


MIL-STD.701N

TABLE XIV. Transient. suppressor diodes ( unidirectional).

MI L.s-19500/551I I I

Oevfce I Breakdown I Uorking I Testtype I voltage

I MaximumI peak I current I c1 amping

number ~V[B~jRat I reverse I tp=31YJms I VoltageI voltage \du~2~ycle I VC\max)

I I v~~I Min

I at p for

I /ITBR ~~.lmsI

IV dc I V(pk) I tide I V(pk)

IN6461:“: ~ : \ ;: ~ ,:”:

1N6462 I .I I 1“

1N6463 I 13.6 I 12 5 I 22.6/

1N6464 I 16.4 I 15 15 I 26.5I

1N6465 I 27 I 24 2I I

I 41.4/ I

1N6466 I 33 I 30.5 1i

I 47.5

1N6467 I 43.7 I 40.3 1 I 63.5i

1N6468 I 54 ! 51.6 I 1 ! 78.5

Maximum peak pulse Icurrent (Ip)

,

A(pk) I A(pk) I

315I

56I

258 i 46 II

125 I 22I I

107 19I I

69 12/ i

63 11I

45 Bi

35 6

TABLE XV. Light emitting diodes.

1 I I I I I IOevice I lColorlxd I C IVF

I type (mcd) I (rim) I (FF) I (V dc) [ (~~ dc)nudser I (mIn)

/(t.YP) 1 I (typ) ~ (Max) ~ (max) ~ (ma. x)

I I I I I I1N6092 I 1.0 I 2.5 I Red

\ M19500/5191J2 \ 1.0 ~ 2.5 ~ Red1626135 ~3111626 ~351311

I 141~%;20Ct? I 1.0 I 2.5 I Yellow, 585 I 35 ~ 3 ., 1il.oi2.5i yel10win5i35 i 3 i 1

I 1N6094I

[0.8 ~1.6~6rean~570\35 I 3 II M19500/52102 ~ 0.8 ~ 1.6 ~ Green ~ 57o ~ 35 ~ 3 I ;

Case / Specification 1I MIL-s-19500/ I

*

I 519 II

ToIB i 520520 I

NOTE: Uhen qual If fed, 1N6609, 6610, and 6611 should be added to this table.

21


TA2M

XY1

Thyr

4m,rs

[,lltm

nco

ntro

lled

rstif

1,,,

)

,,,

11

I

0.2

;;

0.2

I0.

2I

2

-

I I

S.o

130

5.0

I30

5.0

i30

5.0

I30

5.0

I40

5.0

I62

1

- 15.0

I40

15.0

I40

15.0

I40

1s.0

I40

15.0

I40

15.0

!40

I

30.0

I.4

/.8

;:::

I::;

::

0.7

1.35

/.60.

71.

35/.6

0.7

1.35

/.60.

71.

351.

61.

8!.

35/,.

8

5.0

12.

0

5“0

I2“

0- 20

.0i

3.0

20.0

I3.

020

.0I

3.0

20.0

I3.

0

- 20.0

i3.

020

.0I

3.0

20.0

I3.

020

.0I

3.0

20.0

I3.

020

.0~

3.0

_ 20.0

!3:

0

k I*&

l

0.20

0.20

0.30

0.20

0.20

0.20

:.::

15.0

15.0

35.0

35.0

f:;

.y

This

paru

cter

!sld

mtl

fled

●I

VFM

Mor

YFBW

Inol

dfr

spui

flcat

ions

.

145a

sXv

ll.op

tical

lyco

uple

dt$o

l.24r

s.

70.0

10.0

70.0

70.0

70.0

70.0

70.0

70.0

70.0

c,%

.I

Spe,

lf{c,

tlo”

,“11

{M/

MIL

-S.1

95M

ll

I

105

i27

610

5/

276

216

%I

276

TG5

I27

6

:099

~$O

rJ

1094

I28

0

ic+

wi

Dfde

IT,

,n,l

sto,

ICo

uple

dI

Cue

~;4

)447

~2/4

0/0

.81.

5/40

17i

20i

20i

1099

l~u~

g1,

,4,

!:::

‘“5

~40

i7

!‘w

~’.”

L;:2

0/2

0.;

,099

j4tu

812

/40

1.5;

40;7

117M

I2.

010

.o/

25~

25I

T099

III

I

rSp

ecifi

catio

nI

lfI1-

s.19

500/

~ I

T---

--j

548

I

540

I

—


.---— —

!------

I ‘ii.-:$>=

!-—----

MIL-sTD-7olN.———- ——_—-—--___—--—_—

---- —_ —__ -- —_________


I‘m96(96C

610CNZ/

215L05CM

ZI

0s[zrLH

lzI

Lbt

6[MNZ

;H

__+____

JI

61016m

1ZLO

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1 I I I I i

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number

MIL-STD-701N

TABLE XXX. Numerical listing of device types.

-Oevlce tj

1N9B9B-11N990B-11N991B-11N992B.11N11B61N11881N11901N1202A1N1204A1N1206A1N2804B1N2805B1N2806B1N2B0761N2B08B1N280B1N281OB1N2811B1N2813BlN2&l14B1N28166lN2Bl@31N2819B1N282081N2822B1U?B23BIN2824B1N2825B1N2B26B1N282781N2B29B1N2831B1N2832B1N2833B1N2B34B1N2835B1N2836B1N2837B1N28388lN284m1N2841B1N284281N2843B1N284481N2845B1N2846BlN2970i1U2971B1N2972B1N2973B1N2974B1N2975B1N2976B1N297781N2979B

,,Table II Oevlce type number

[1

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IVIVIVIVIVIv

Ixx

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33


MIL.5TD-701N

TA8LE XXX. Numerical 1 istf ng of device types - Continued.

1N4103.11N4104.1Mums-l1N41C6-11N4107-1pw~-~

1N411O-11N4111-11N4112-11N4113-1IN4114.11N4115-11N4116.11N4117-11N4118-11N4119.IIN4120-11N4121.1

1N4148-11N4150-11N4153.1IN4370A-1IN4371A-11N437ZA-11N4454-11N44601N44611N44621N44631N44641N44651N44661N44671N44681N4469IN4470IN44711N44721N4473IN4474M4475

Table i

ixxxxxxxx

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:xxxxxx

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ixxxxxI1I

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Oevice type nunber

1N4476lN4477IN44781N44791N44801N44811N44821 N44831N44841N44851N44861N44871N4488IN44891N44901N44911N44921N44931N44941N44951N4496IN455781N4 55881N455981N4560B1N4561B1N4562B1N4565A-11N4566A-11N4567A-11N4568A-11N4569A-11N4570A-1lN4571A-11N4572A-11N4573A-I1N4574A-11N4614-11N4615-11N4616-11N4617-11N4618-11N4619-11N4620-11N4621-11N4622-11N4623-IIN4624-I1N4625-11N4926-I1N4927-11N4938-1IN49541N49551N49561N4957

Table II Oevfce type numberII

xxx

;xxxxxxxxxxxxxxxxxx

ix

1!lx1xIXIXIX1xIx1xIX

xxxxx

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ixxxx1xxxx

1N49581N49591N49601N49611N49621N49631N49641N4965IN4%61N49671N4%81N49691N49701N49711N49721N49731N49741N49751N49761N49771N4978LN49791N49801N49811N49821N49831N49841N49851N49861N49871N49881N49891N49901N49911N49921N4993A1N4994A1N49951N49961N5139AIN5140A1N5141A1N5142A1N5143A1N5144A1N5145A1N5146A1N5147A1N5148A1N52831N52841N52851N52861N52871N5288

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x!XIXIx1XIXIXIxlx1x1X11X11X11XIIXIIXII

34


I

MI L-STD-701N

TABLE XXX. Numerical listing of device types - Continued.

I 1N5289I 1N5290I 1N5291I 1N5292I IN5293

I ;[:::I 1N5296I 1N5297

I ;[::::I 1N5300i 1N5301

1N5302IN53031N53041N53051N53C61N53071N530B1N53091N531O1N53111N53121N53131N53141N54151N5416IN54171N54181N54191N54201N5461B1N5462B1N5463B1N545-4B1N5465B1N5466B1N5467B1N546531N5469B1N5470B1N5471B1N5472B1N5473BlN5474i1N5475B1N5476B1N55511N55521N55531N55541N56151N56161N5617

1

IxIIX11XIIx11X11xIIxIIxIIXIIX11x11X11XIIx11x11XIIx11xIIX11x11X11XIIxIIXIIx11X11IIIIII111111111IIIx1XI

1;XIXIxlxl

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Oev$ ce type

IN561B1N56191N56201N56211N5 6221N56231N57111N5712IN57191N5B041N5B061N5B09

number Table

II11111IIIII111

I

:111111111111111111XIVXIVXIV

VIIIXIIIXIIIXIIIXIIIX111XIIIXIIIx111X111X111X111X111X111X111X111XIIIXIIIX111XIIIX111XIIIX111XIIIXIIIX111XIIIXIIIXIIIX111X111X111X111X111x111XIIIXIII

Oevice type

1N6140A1N6141A1N6142A1N6143A1N6144A

number Table

XIIIX111X111x111X111X111X111X111X111XIIIX111X111XIIIX111X111X111XIIIXIIIx111X111X111X111XIIIXIIIX111X111XIIIXIIIXIIX111XIIIXIIIX111X111

vv

Ii I111111XIVxIVXIVxIVXIVXIVXIVx11

xxx

;xx

VIII

35


t41L-sTD-7olN

TABLEXXX. Numerfcal 11 sting of device types - Conttnued.

levfce type number

1N6507IN650B1N65091N65111N6632IN66331N66341N66351N66371N663B1N66421N6643U9500/469-01419 E41D/469-02419500/469-03419500/483.01419500/483-02U95001483-03U9500/51902u9slo/52002H19500/5210zSPA25

,04,05

2N17952N1 7982N18002N1E062N19132N19162N2323A2N2 324A2N2326A2N2328A2N23292N30272N302B2N30292N30932N3095;;:0;7

2N206D2N21512N2219A2N2222A2N2369A2N2432A2N2484

Table

VIIIVIIIVIIIVIII

ixxx

iI

VIIVIIvIIVIIVIIVI 1xvxvXIVVIIvIIVIIVIIxv 1XVIXVIXVIxv IXVIXVIXvlXVIXVIxv IXVIXVIXVIXVIXVIXvlXVIXVIXVIxv 1XVIXVI

Vxxx,xxxlXXIII

xxXVIIIXVIIIXVIIIXXVIIIXVIII

Table

x1x

xxXXII

xxXIXXIX

XXIIIXXVIIIKXV1lIXVIIIXVIII

XIXXXIIXVIII

KVIII(VIIIxxXvlxXVIXXVIIIXVIIIxxx 1xxXIX

XVIIIxx

XVIIIXVIIIxxXXIx1xXIXx1xxxXXI

XXIIIXXIIIXXVIIXXV1IXXVII

Xxl 1XIX

XtiI Ixxx1x

XVIIIx1xXXI

XVIIIXXIV

XXVIIXXVIIXXVII

XXVI

Oevlce

2N49572N50012N5CfJ52N5038

2N52502N52512N5302

tJJ& number-

rXI IOXIX i

xx IXXIxx

[III /xXVII IxXVII IxXVII IxIX IXVIII I

1x%1 I

xx Ixx Ixx Ixx I

XI; II !xIX IXVIII IXYIII IXVIII Ixx I

X;; 1IXVIIIxxXXIxx 1

{[xx 1

XXIVXXIV

xxxxvxxvxxvxxvXXVIXIXxxvxxvxxvxxvxxvxxvxxvxxvxxvxxv

I/

iI

I

xxv Ixxv

XXI II

36


I

MIL..STD-7O1N

TABLE XXX. Numerical listing of device types - Continued.

Table

xxxxxxx 1XXII

xxvxxv

XXIX

i 2N6758 i XXIX i i 2N6798 i xxixI 2N6760I 2N6762

I XXIX I I 2N6BO0 I XXIXI XXIX

I 2N6764I I 2N6802 I XXIX

I 2N6766I XXIX [ I 2N6804 I XXIXI XXIX I I 2N6B06 I XXIX

I 2N6768 I XXIXI 2N6770

I I 2N6845 I XXIXI XXIX I I 2N6847 I XXIX

I 2N6782 \ XXIX ~ ~ 2N6849 \ XXIX

~

I type number

~

I 2N688I 2N690I 2N692I 2N1774AI 2N1777AI 2N1795I 2N1798I 2N1BO0I 2N1B06I 2N1913

2N1916

y~

2N69B72N69B94N474N484N49

TABLE XXX I . Numerical 1 i sting of thyristors.

,,Table i i Oevfce

\~ type no.

XVIXVIXVIXvlXvlXVIXVIxv IXvlxv IXVIxv 1

ii//II//IIIIIIIIIIII

2N2323A2N2324A2N2326A2N232BA2N23292N30272N302B2N30292N30932N30952N31397

XXIXxxixXXIXXXIXXXIXXXIXXXIXXXIXXXIX

x1xx1xXVIIXVIIXVII

—,

Table I

I

XVIxv IXVIxv IxVIXVIXvlXVIXVIxv 1XVI

I

I

37


MI L-STO-70LN

CONCLUDING t44TERlAL

Custodians:Army - ERNavy - ECAir forte - 17

Review acttvi ties:Army - MI, SM. ATNavy - SHAfr Force -11, 85oLA - ESNAS4 - NA

User activities:Aq - NoneNavy - AS, CG, OS, MCAir Force - 19

Preparing actfvity:Navy . EC

Agent:OLA - ES

(Project 5961-1157)

38

International Interest ( see 6.3).


Documents

MIL-STD-701N 31 JANUARY199o SUPERSEDING MIL-S7D-701 M …everyspec.com/MIL-STD/MIL-STD-0700-0799/download... · MI L-STO-701N FOREWORO 1. Thfs ilitary standard is approved for use