MICROWAVE PROCESSING AND ENGINEERING CENTER

MRI

MICROWAVE SINTERING OFMICROWAVE SINTERING OF

WCWC--Co Co

BASED CEMENTED CARBIDESBASED CEMENTED CARBIDES

MICROWAVE PROCESSING AND ENGINEERING CENTER

Cowt.%

HeatingProcess

Sintering°C/time ardness

A6 MW 1450/10min. 88.25± 0.67

6 Conv. 1450/1hr 81.80± 0.91

12 MW 1300°C/10 min 88.87± 0.10

12 Conv. 1300°C1h 84.84± 0.53

12 MW 1350°C/10 min 87.16± 0.21

12 Conv. ~1440°C/~2h 86.32± 0.41

Rockwell A Hardness

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

02468

101214161820

MICRO 1 MICRO 2 STD 1 STD 2

STANDARD VS. MICROWAVE CARBIDE

IMPROVED ABRASION RESISTANCE

ABRASION RESISTANCE

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

74.0%

75.0%

76.0%

77.0%

78.0%

79.0%

80.0%

81.0%

82.0%

83.0%

MICRO - 1 MICRO - 2 STD - 1 STD - 2

STANDARD VS. MICROWAVE CARBIDE

IMPROVED EROSION RESISTANCE

EROSION RESISTANCE

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

IMPROVED EROSION RESISTANCE

MICROWAVESINTERED

CONVENTIONALLY SINTERED

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

BridgeTech Sinter-Hip

Impa

ct S

urvia

l Ene

rgy

(J)

HighAverage

Low

MW Sintered Sinter-HIPImpact Apparatus

Improved Impact Strength

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

COMPARISON OF CONVENTIONALLY AND COMPARISON OF CONVENTIONALLY AND

MICROWAVE SINTERED WCMICROWAVE SINTERED WC--CoCo DRILLDRILL PARTSPARTS

IMPROVED IMPACT STRENGTH

MICROWAVESINTERED

CONVENTIONALLYSINTERED

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

02468

101214161820

MICRO STD

STANDARD VS. MICROWAVE CARBIDE - 48 HOUR EXPOSURE

MIRCOWAVE SINTERED CARBIDE EXHIBITS IMPROVED CORROSION RESISTANCE

IMPROVED CORROSION RESISTANCE

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MICROWAVE PROCESSING AND ENGINEERING CENTER

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

MICROWAVE SINTERED TSD COMPOSITE INSERTSMICROWAVE SINTERED TSD COMPOSITE INSERTS

ABRASION RESISTANT TSDMICROWAVE SINTERED IN TUNGSTEN CARBIDE

Part 1215414.4mm DIAM x .12.7mm LONG3 TSD ELEMENTS 4mm DIAM.

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

MICROWAVE SINTERED TUNGSTEN CARBIDEMICROWAVE SINTERED TUNGSTEN CARBIDEIMPROVED PROPERTIESIMPROVED PROPERTIES

• Fine grain structure• No grain growth inhibitors• Uniform cobalt distribution• Improved abrasion resistance• Improved erosion resistance• Improved corrosion resistance• Improved impact strength• More energy efficient process• Less capital intensive

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

MICROWAVESINTERED

FROM IDENTICAL GREEN PARTS at 1500X

CONVENTIONALLYSINTERED

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

MRI

MICROWAVE PROCESSING AND ENGINEERING CENTER

MRI