Microfabrication I MC

7/31/2019 Microfabrication I MC

1/88

NANO III

Chapter:

Micro- and nano-fabrication

Michel CalameInstitut fr Physik, Klingelbergstrasse 82, 4056 Basel

room: 1.20, 1st flooremail: michel.calame@un ibas.ch

MC, Nano III, 24.04.04, 1

Outline Introduction:

overview, state of the art,

semiconductor physics reminder

Fabrication basics

IC fabrication overview

clean-rooms

Silicon: from sand to wafer material deposition techniques

lithography etching

examples of devices: MEMS, NEMS

Outlook: new and future techniques

MC, Nano III, 24.04.04, 2
mailto:[email protected]:[email protected]:[email protected]


2/88

References

overview books

1. Introduction to Semiconductor Manufacturing Technology

H. Xiao, Prentice-Hall,2001.

2. Fundamentals of Microfabrication: The Science of Miniaturization

M. Madou, 2nd ed., CRC Press, 20023. Nanoelectronics and Information Technology

R. Waser ed., Wiley-VCH, 20034. VLSI Technology (more physical)

SM. Sze, 2nd ed., McGraw-Hill, 1988

many web sites, e.g. www .memsnet.org/glossarysee also companies web sites: Intel, Infineon, IBM, AMD,

MC, Nano III, 24.04.04, 3

Introduction

1947, 23th December

John Bardeen, Walter Brattain,William Schockley

ATT Bell Labs

first point contact

transfer resistor

reconstitution:

Aylesworth

http://www.pbs.org/transistor/MC, Nano III, 24.04.04, 4
http://www.memsnet.org/glossaryhttp://www.memsnet.org/glossaryhttp://www.pbs.org/transistor/http://www.memsnet.org/glossaryhttp://www.pbs.org/transistor/


3/88

Introduction

1958

Jack Kilby, Texas Instruments

first IC (Integrated Circuit)

C. Esser, InfineonMC, Nano III, 24.04.04, 5

Introduction

1961, Robert Noyce,

Fairchild Camera

first integratedcircuit available as a

monolithic chip

Planar technology

(Si substrate and Allines)

C. Esser, Infineon


4/88

MC, Nano III, 24.04.04, 6


5/88

Introduction

1971 Intel anounces the i4004 microprocessor

"a new era of integrated electronics"2250 transistors, 10m technology, 108kHz

http://www.intel.c o mMC, Nano III, 24.04.04, 7

Introduction

1981

Intel i8088

29000 transistors,3m technology, 8MHz

invention of the PC

(personal computer)IBM, A.Child, B.Gates

http://www.intel.c o m
http://www.intel.com/http://www.intel.com/http://www.intel.com/http://www.intel.com/


6/88

MC, Nano III, 24.04.04, 8


7/88

Introduction

1965, Gordon E. Moore

(co-founder Intel Corporation)

Prediction 1975:

from 1980 on circuit densityor capacity of semiconductordevices will double every twoyears instead of one year

Electronics, Vol. 38(8)

The complexity for minimum

component costs has increased at a rateof roughly a factor of two per year.

Certainly over the short this rate can be

expected to continue, if not increase.

Over the longer term, the rate ofincrease

is a bit more uncertain, although there is

no reason to believe it will not remain

nearly constant for at least 10 years.

http://www.pbs.org/transistor/ MC, Nano III, 24.04.04, 9

Introduction
http://www.pbs.org/transistor/http://www.pbs.org/transistor/


8/88

http://www.intel.c o mMC, Nano III, 24.04.04, 10
http://www.intel.com/http://www.intel.com/


9/88

Introduction

I think there is a world market for

maybe five computers.

There is no reason for any

individual to have a computer in

their home.

640K ought to be enough for

anybody.

Thomas Watson,

Chairman of IBM, 1943

Ken Olson,

President, Chairman and Founder of

Digital Equipment Corp., 1977

Bill Gates, Microsoft founder, 1981

(though today he denies he said it)

MC, Nano III, 24.04.04, 11

Introduction

1958 1 transistor = 10 US$;first integrated circuit with 4 transistors: 150 US$market 218106 US$

2000 for 10 US$, you receive 50106 transistors (with passivecomponents, interconnects, ...)

market 150109 US$

unprecedented in industry's history

MC, Nano III, 24.04.04, 12


10/88

IIIIIIIIIII

Introduction

state-of-the-arttoday

MC, Nano III, 24.04.04, 13

Introduction

going really nano, i.e.


11/88

Outline

Introduction:



(

condensed matter course) Fabrication basics


clean-rooms

Silicon: from sand to wafer

material deposition techniques

lithography etching



MC, Nano III, 24.04.04, 15

Semiconductors physics reminder

Energy gaps

Si ~ 1.12 eV Ge~ 0.66 eV GaAs~ 1.43 eV

NB: kT (RT) ~25meV

MC, Nano III, 24.04.04, 16


12/88


Si atomsintrinsic

As doped Sin-typeother donors:P, Sb

Ga doped Sip-typeother acceptors:B, Al

e.g.: resistivity changes by > 6 orders of mag.with a 1ppm B doping

MC, Nano III, 24.04.04, 17


Basic (active) element of ICs

FET (field-effect transistor)voltage applied to capacitively coupled electrode (GATE) creates anelectric field altering the nb of charge carriers in a semiconductor,thus modulating its conductivity (transfer resistor)

technologies for gate electrode pn-junction (junction FET or J-FET) Schottky barrier (metal-silicon FET or MESFET) insulated gate FET, like metal-oxide-semiconductor MOSFET

bipolar transistor: npn (or pnp), not capacitive


13/88

MC, Nano III, 24.04.04, 18


14/88


pn-junction Currentvs voltage: diode behavior

depletion region shrinks

Reverse biased

applied voltage enhances

the internal potential

difference

Forward biased

applied voltage opposed to

internal potential difference

breakdown

Ref. 3MC, Nano III, 24.04.04, 19


npn-transistor2 diodes back-to-back

n-type

p-type

n-type

Ref. 3


15/88

1111111111111111111111111111111111111111111111111111111111111111111

MC, Nano III, 24.04.04, 20


16/88


MESFET technology

Structure and signconvention of a metal-semiconductor

junction

metal-semiconductor junction: barrier for electrons and holes

if the Fermi energy of the metal is somewhere between theconduction and valence band edge

Course Van ZeghbroeckMC, Nano III, 24.04.04, 21

Semiconductors physics reminderEnergy band diagram of the metal and the semiconductor

before contact after contact

thermal equilibrium(Fermi levels adjusted)

Course Van Zeghbroeck


17/88


18/88

22222222222Semiconductors physics reminder

Workfunction of selected metals and their measured barrierheight (eV) on germanium, silicon and gallium arsenide.

Course Van ZeghbroeckMC, Nano III, 24.04.04, 23


MOSFET technology: MOS capacitor energy band diagramAl/SiO2/p-Si

Metal (gate) : Al (Mo, W, Cu), Poly-SiOxide : SiO2, d 1.7-10 nmSemiconductor : p- or n-type silicondoping 1013 - 1018 cm-3orientation typ.

Ref. 3


19/88

MC, Nano III, 24.04.04, 24


20/88


21/88

MC, Nano III, 24.04.04, 26


22/88


MOS capacitor

p-type semiconductor

B. Fste, InfineonMC, Nano III, 24.04.04, 27


MOS capacitor

B. Fste, Infineon


23/88

MC, Nano III, 24.04.04, 28


24/88


MOS capacitor



MOS capacitor

B. Fste, Infineon


25/88

MC, Nano III, 24.04.04, 30


26/88


MOS capacitor



MOS capacitor

B. Fste, Infineon


27/88

MC, Nano III, 24.04.04, 32


28/88


MOSFET

B. Fste, Infineon MC, Nano III, 24.04.04, 33


B. Fste, Infineon


29/88

MC, Nano III, 24.04.04, 34


30/88BBBBBBBBBBB


MOSFET (n-channel)

depletion type(on by default)

Vg=0 Vg0

enhancement type(off by default)



n-channel (NMOS)(charge carriers:electrons)

p-channel (PMOS)(charge carriers:holes)

Ref. 1


31/88

MC, Nano III, 24.04.04, 36


32/88


Refs. 1 & 3 MC, Nano III, 24.04.04, 37


CMOS: complementary MOS, todays most common technology

n-channel MOS device in series with p-channel MOS device(when NMOS on, PMOS off and vice-vers, hence complementary )

simple design draws very little current (except when switched) low-power technology

basic logic gate: inverter Vin high (1): NMOS on, PMOS off,

Vout=Vss (low, 0) Vin low (0): NMOS off, PMOS on,

Vout=Vdd (high, 1)

B. Fste, Infineon


33/88

MC, Nano III, 24.04.04, 38


34/88


CMOS: state-of-the-art

SOI substrate, Cu/low-k interconnection,5 metal layers, features


35/88

MC, Nano III, 24.04.04, 40


36/88fffffff

Outline

Introduction:



Fabrication basics


clean-rooms



lithography etching



MC, Nano III, 24.04.04, 41

IC fabrication

example of (simple) CMOS process sequence

H. Xiao, Ref.1MC, Nano III, 24.04.04, 42


37/88

IC fabrication


IC fabrication

Ref. 3


38/88

MC, Nano III, 24.04.04, 44


39/88

444444444444444

e.g.: wire bonding, packaging

NB: flip-chip packaging

H. Xiao,Ref.1 MC, Nano III, 24.04.04, 45




Fabrication basics


clean-rooms Silicon: from sand to wafer


lithography etching



MC, Nano III, 24.04.04, 46


40/88

Clean room

importance of yield in industrial processes clean rooms

limit contaminants

(air, people, facility, equipment, process (gas, chemicals, ...), staticcharges, .)

special furniture and tools (paper, pens, ...)

MC, Nano III, 24.04.04, 47

Clean room

clean room classes

class 1less than 1 particle ofdiameter larger than0.5m in a cubic foot

clean house,

typ. > 500000particles per cubicfoot

(Federal Standard 209E)

H. Xiao, Ref.1

MC, Nano III, 24.04.04,48


41/8844444

Clean room

clean room design


Clean room

simpler clean room design

H. Xiao, Ref.1


42/88

MC, Nano III, 24.04.04, 50


43/88

Outline

Introduction:



Fabrication basics


clean-rooms



lithography etching



MC, Nano III, 24.04.04, 51


14 +IV(+II)

SiSilicon

[Ne]3s23p2

28.085g/mol

1410C 2.33kg/m3

2nd (after oxygen) most abundant in earths crusts: 26%

7th most abundant element in universe

MC, Nano III, 24.04.04, 52


44/88


Si: nonmetallic element, indirectsemiconductor

SiO2 glass (amorphous),

quartz (cristalline)SiC very hard (polishing)Si crystalline (semiconductor

industry)typical resistivity: 100 mcm

structure: cfc (diamond-like)

C. Heedt, WackerSiltronic

MC, Nano III, 24.04.04, 53


advantadges of Si over othersemiconductors (Ge)

cheap, abundant

oxide (SiO2) strong and stable

dielectric; grown easily bythermal oxidation

larger band gap (1.1 eV): higheroperation T larger breakdown voltage

Doping elements n-type: P (phophorus), As

(arsenic), Sb (antimony) p-type: B (boron)


45/88

MC, Nano III, 24.04.04, 54


46/88


Si purification: natural Si oxide MGS EGS

C. Heedt, WackerSiltronicMC, Nano III, 24.04.04, 55


Si purification: MGS EGS



47/88

MC, Nano III, 24.04.04, 56


48/88


EGS single cristal ingot: CZ growth (Czochralski method)



Si ingot

up to 300mm diameter (FZ or floating zone purer butlimited to 200mm)

C. Heedt, WackerSiltronic MC, Nano III, 24.04.04, 58


49/8855555555


Surface grindingmark crist. orient.

flat: up to 150mm

notch: > 200mm



wafer sawing

edge rounding



50/88

MC, Nano III, 24.04.04, 60


51/88


wafer finishing

lapping

(global planarization,double-sided)

wet etching , isotropic(4:1:3 mixture of HNO3,HFand CH3COOH)

CMP (chemical mechanicalpolishing)

wet cleaning (RCA1, RCA2)

surface roughness after the various treatment

Ref. 1MC, Nano III, 24.04.04, 61

Outline

Introduction:



Fabrication basics


clean-rooms



lithography etching




52/88

MC, Nano III, 24.04.04, 62


53/88

Fabrication: material deposition techniques

Physical processes

Physical Vapor Deposition (PVD):

thermal evaporation

molecular beam epitaxy (MBE)pulsed laser deposition (PLD)

sputtering

Casting

Chemical processes

Chemical Vapor Deposition (CVD)

Electrodeposition

Langmuir-Blodgett films (LB)

MC, Nano III, 24.04.04, 63

Fabrication: physical deposition techniques

film deposition basics:

gas kinetics

(mean free path: small holes filling, residual gas atoms: purity)

UHV (p


54/88SSSSSSSSSSSSSSSSSSSS


thin film growth mechanisms: heteroepitaxy

(lattice match and surface energy differences)

Volmer-Weber(island growth):

Frank-Van der Merwe(layer growth; ideal epitaxy)

Stranski-Krastanov

(layers + islands)

MC, Nano III, 24.04.04, 65


thermal evaporation

resistanceheatedevaporation

sources

MC, Nano III, 24.04.04, 66


55/88


thermal evaporation

e-beam evaporation effusion (Knudsen) cell

MC, Nano III, 24.04.04, 67


Molecular Beam Epitaxy (MBE)

Ref. 3 & J.Faist MC, Nano III, 24.04.04, 68


56/88

66666666666666


Molecular Beam Epitaxy (MBE)

TEM pictures of a QCLGaAs/AlGaAs structure(J. Faist, Neuchtel)

J.Faist, UniNeuchtel MC, Nano III, 24.04.04, 69


Pulsed Laser Deposition, laser ablation process (PLD)

MC, Nano III, 24.04.04, 70


57/887777777777777


DC sputtering

few 100V plasma

p~10-1

- 10-3

mbar

sputtering of target byions (typ. Ar)

stoichiometry of target(~) preserved

increase ionization rate ofplasma with B-field:magnetron sputtering

insulating targets: RF-sputtering

MC, Nano III, 24.04.04, 71


Casting (spinning)

(typ. polymers, e.g. photoresists, polyimide)

MC, Nano III, 24.04.04, 72


58/88

poly Si SiH4 Si + 2 H2 580-650C, 1mbarSiO2 3 SiH4 +O2 SiO2 + 2 H2 450C44444444444444444

Fabrication: material deposition techniques

Physical processes

Physical Vapor Deposition (PVD):

thermal evaporation

molecular beam epitaxy (MBE)pulsed laser deposition (PLD)

sputtering

Casting

Chemical processes

Chemical Vapor Deposition (CVD)

Electrodeposition

Langmuir-Blodgett films (LB)

MC, Nano III, 24.04.04, 73

Fabrication: chemical deposition techniques

CVD: multiple wafer reactor

e.g.: deposition of

PECVD: plasma enhanced CVD, allows temperature reductionMOCVD: metal-organic CVD, use organometallic precursors(NB: thermal oxidation)

MC, Nano III, 24.04.04, 74


59/88


CVD example: carbon nanotubes growth

(CH4, C

2H

4, C

2H

2...)

MC, Nano III, 24.04.04, 75

CVD example: CNTs

hydrcarbon gases: C2H2 (acetylene), C2H4 (ethylene), CH4(methane) (+ )

carrier gases: H2, Artemperature: 600-1000Ccatalyst: Fe (Ni, Co)

MC, Nano III, 24.04.04,76


60/88

MC, Nano III, 24.04.04, 77777777777777777

1m

SWNTsFe, ethylene, 900C-1000Csee e.g.: Dai et al. and Hafneret al.

~2nm

lithographically patterned Fe film, acetylene, 600C-700C

MC, Nano III, 24.04.04, 78


61/88

Length(m)

Length(m)

Length(m)

length of tubes vs time, flowand thickness

SEM image perp. to SiO2/Sisurface

120

100

80

60

40

20

0

120

0 5 10 15

Growth Time [min]

100

80

60

0 5 10 15 20

120

100

80

60

40

20

C H Flow [sccm]2 2

Z. Liu et al., 20020 5 10 15 20

Fe thickness [nm]

MC, Nano III, 24.04.04, 79


Electrodeposition (electroplating)


62/88

MC, Nano III, 24.04.04, 80


63/88777777777


Langmuir-Blodgett (LB) technique

MC, Nano III, 24.04.04, 81




Fabrication basics


clean-rooms

Silicon: from sand to wafer material deposition techniques

lithography etching



MC, Nano III, 24.04.04, 82


64/88

Different types of lithography

radiation source

DLWillumination control system

resist coated sample

Ref. 3 MC, Nano III, 24.04.04, 83

Optical lithography

source wavelengths:optical: > 450nmUV: 365nm-435nm

DUV: 157nm-250nmEUV: 11nm-14nmx-ray: < 10nm


65/88

Ref. 3 MC, Nano III, 24.04.04, 84


66/88

Optical lithography

contact

masking methodsproximity projection

MFS=(d.)1/2 poorer resolution

MFS ~ [(d.+g)]1/2

better resolution(diffrac. limited, adj.

Rayleigh crit.)reduction possible

mask suffers (decreases errors)stepper (multiple exp.)

Ref. 3 MC, Nano III, 24.04.04, 85

Optical lithography

phase-shifting technique

MC, Nano III, 24.04.04, 86


67/88

Optical lithography

photoresists

positivemade soluble upon exposure(chain scission)e.g. PMMA (DUV, e-beam), DQN

negativeinitiates cross-linking of side chainsor polymerization of mono-

/oligomeric speciese.g. maN400

Ref. 3 MC, Nano III, 24.04.04, 87

Optical lithography

MC, Nano III, 24.04.04, 88


68/88

Optical lithography

MC, Nano III, 24.04.04, 89

Optical lithography

MC, Nano III, 24.04.04, 90


69/88888888

Optical lithography

photoresistsprofiles

Ref. 2 MC, Nano III, 24.04.04, 91

Optical lithography

some important points

resist baking: soft-bake, PEB, hard bake(NB: Tg polymer)

adhesion layer (HMDS)

development times/temperatures fresh products

DOF (depth of focus) DOF /(NA)2

MC, Nano III, 24.04.04, 92


70/88


71/889999999999

electron beam lithography (EBL)

precise (energy, dose)relatively slow(industrial application: parallel beams)resolution limit ~ 10nm (50nm)

no masklarge DOF

large scattering of electrons

Refs. 1 & 3 MC, Nano III, 24.04.04, 95

Emerging lithography technologies

STM lithography: low energy e- (


72/88

Ref. 2 MC, Nano III, 24.04.04, 96


73/88

soft lithography: microcontact printing (MCP)

PDMS,e.g Sylgard 184,DOW Corning

B. Michel et al., Advanced Semiconductor Lithography, 2001 MC, Nano III, 24.04.04, 97


B. Michel et al., Advanced Semiconductor Lithography, 2001


74/88

MC, Nano III, 24.04.04, 98


75/88


master

first used to print alkanethiols on

gold surfaces

quick and cheap method toperform simple assays (e.g.:immunoassay: crossed stampedlines)

stamp

printed and etched pattern

B. Michel et al., Advanced Semiconductor Lithography, 2001 MC, Nano III, 24.04.04, 99

Outline

Introduction:



Fabrication basics

IC fabrication overview clean-rooms

Silicon: from powder to wafer


lithography etching




76/88

MC, Nano III, 24.04.04, 100


77/88

Fabrication: etching

Chemical: wet etching (can be anisotropic due to crystal-face selectivity)

Physical etching (sputtering) ion milling, FIB (focused ion beam) dry etching (plasma assisted techniques, pressures up to 10mbar)

(more a combination of physical and chemical material removal)

key points: etch rates, selectivity

also CMP: chemical mechanical polishing to achieve global planarizationcombine mechanical abrasion with chemical etchingkey parameters: force, slurry type, pad velocity

MC, Nano III, 24.04.04, 101

Fabrication: wet etching

use chemical solutions to dissolvematerial

3 steps:reactive species to surface/ etchproducts / rinse, dry

isotropic

anisotropic

http://www.memsguide.comMC, Nano III, 24.04.04, 102
http://www.memsguide.com/http://www.memsguide.com/


78/88


SiO2 6:1 buffered in NH4F or 10:1 and 100:1 HF in H2O(NB: 1:1 HF (49% HF in H2O) too fast)

SiO2 + 6 HF H2SiF6 + 2 H2O (H2SiF6 soluble in H2O)

Si polycrystalline or single-crystalisotropic: mix of HNO

3and HF

(cyclic process: HNO3 oxidizes Si, HF removes oxide)

Si + HNO3 + 6 HF H2SiF6 + HNO2 + H2O + H2

anisotropic (cystalline Si): (100) rate / (111) rate ~ 100 at 80C

KOH 23.4% wt, C3H8O 13.3% wt (isopropyl alcohol), H2O 63.3% wtyields V-shaped groove

MC, Nano III, 24.04.04, 103


Si3N

4H

3PO

491.5% concentration at 180C (etch rate ~ 100/min)

Si3N

4+ 4 H

3PO

4 Si3(PO4)4 + 4 NH3

silicon phosphate (Si3(PO4)4) and amonia (NH3) are water soluble

selectivity tothermally grown SiO

2> 10:1

Si > 33:1

metals Al mix of acids (phosphoric, acetic, nitric) and waterTi mix of sulfuric acid and hydrogen peroxide

MC, Nano III, 24.04.04, 104


79/88

Fabrication: dry etching

RIE: reactive ion etchingboth physical and chemical

http://www.memsguide.com MC, Nano III, 24.04.04, 105

Fabrication: dry etching

DRIE (key process for MEMS)

ICP RIE

SF6

alternated with C4F

8(to

passivate walls), Bosch process

selectivitySi:SiO2, 150:1profile angle +/- 1


80/88

http://www.memsguide.com MC, Nano III, 24.04.04, 106


81/88

Outline

Introduction:



Fabrication basics


clean-rooms

Silicon: from powder to wafer


lithography etching

examples of devices


MC, Nano III, 24.04.04, 107

MEMS/NEMS and devices

from MEMS (micro-electromechanical systems)

e.g. Si gears for watch industry: lower friction and inertia

CSEM & Ulysse-NardinMC, Nano III, 24.04.04, 108


82/88

(((((((((((((((


electrostatic micromotorfabricated from silicon

individual mechanicalmicromirrors part of a Texas

Instruments Digital LightProcessor (MOEMS)

Physics World, Feb. 2001MC, Nano III, 24.04.04, 109


fabrication process reminder

structural layer sacrificial layer substrate

Physics World, Feb. 2001 MC, Nano III, 24.04.04, 110


83/88


ion-selective electrode array platform for in-vitro intracellular recording

O. Guenat,et al., Microfabrication and characterization of

an ion-selective microelectrode array platform, Sensors &Actuators, B, 2003.

MC, Nano III, 24.04.04, 111


down to NEMS

masses in 10-15g to 10-18 g range (L3) resonators above 10GHz (1/L)

(f ~ (spring cst/eff. mass)1/2, spring constant L) very low power: 10-18W threshold (thermal fluc. at 300K) low dissipation, high Q factor: sensitive to damping sensors

(sensitivity potentially reaching quantum limit)

NB: 10x10x100 nm Si beam contains ~ 5 x 105 atoms,among which ~3 x 104 reside at the surface(i.e.: > 10% of the constituents are surface or near-surface atoms)

Physics World, Feb. 2001MC, Nano III, 24.04.04, 112


84/88


nano-tweezers:electrostatic actuation

actuation amplitudedown to 6 pm (rms)/ sqrt(Hz)

Ch. Meyer, H. Lorenz, and K. Karrai, "Optical detection of quasi-static actuation ofnanoelectromechanical systems" Appl. Phys. Lett. 83, 2420 (2003).

MC, Nano III, 24.04.04, 113


Nanomechanical Electron Transport:quantum-bell: max current at f

drive~ resonance freq.

avg nb of e- shuttled per cycle

A Erbe, Ch Weiss, W Zwerger, and R H Blick, Phys. Rev. Lett. 87, 096106 (2001)M Jonson and R Shekhter, Phys. World 16, 21 (2003).

MC, Nano III, 24.04.04, 114


85/88

Integration: hybrid devices

Tech. Roadmap for Nanoelectronics, IST program, European Commission MC, Nano III, 24.04.04, 115

END

MC, Nano III, 24.04.04, 116


86/88

Sources and ressources

Books

Introduction to Semiconductor Manufacturing Technology

H. Xiao, Prentice-Hall, 2001.

Fundamentals of Microfabrication: The Science of Miniaturization

M. Madou, 2nd ed., CRC Press, 2002

Nanoelectronics and Information TechnologyR. Waser ed., Wiley-VCH, 2003

VLSI Technology (more physical)

SM. Sze, 2nd ed., McGraw-Hill, 1988

cd-rom: 4th Dresdner Sommerschule Mikroelektonik, 2003. www.sommersch ule-mikroelektr o nik.d eDVD: EPFL CMI

web sites

www. memsnet.org; w ww.biom em s.net

http://mmadou.eng.uci.edu/LivingBook/webterlist.htm

Semiconductor physics

http://ece-www.colorado.edu/~bart/book/contents.htm

www.techlearner.com/semiconductors.htm

web sites from companies: Intel, Infineon, IBM

MC, Nano III, 24.04.04, 117


MC, Nano III, 24.04.04, 118
http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.biomems.net/http://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.sommerschule-mikroelektronik.de/http://www.memsnet.org/http://www.biomems.net/http://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://www.techlearner.com/semiconductors.htm


87/88

Introduction

The Lives and Death of Moore's Law by Ilkka Tuomi

First Monday, volume 7, number 11 (November 2002),

URL: http://firstmonday.org/issues/issue7_11/tuomi/index.html

MC, Nano III, 24.04.04, 119

http://www.vcs.ethz.ch/chemglobe http://chemlab.pc.maricopa.edu / p eriodic

MC, Nano III, 24.04.04, 120
http://firstmonday.org/issues/issue7_11/tuomi/index.htmlhttp://chemlab.pc.maricopa.edu/periodichttp://chemlab.pc.maricopa.edu/periodichttp://firstmonday.org/issues/issue7_11/tuomi/index.htmlhttp://chemlab.pc.maricopa.edu/periodic


88/88

Documents

Microfabrication I MC