MICROELECTRONIC PRODUCT CATALOG - oldsite-rtd-uni.1gb.ru

MICROELECTRONICPRODUCT CATALOG

[email protected] 1 www.whiteedc.com

CompactFlash® is a registered trademark of SanDisk Corporation and is licensed royalty-free to the CFA, which in turn will license it royalty-free to CFA members. CFA: CompactFlash® Association. AMD® is the registered trademark of Advanced Micro Devices, Inc.Intel® is the registered trademark of Intel Corporation.Intel StrataFlash® is a registered trademark of Intel Corporation.NBL is 100% compatible with industry standard ZBT®.ZBT® is a registered trademark of Integrated Device Technology.Micron® is a registered trademark of Micron Technology, Inc.All other trademarks are the property of their respective owners.

Introduction ................................................................................................. 2Product Overview ........................................................................................ 3RoHS ............................................................................................................ 4Module Memory

FBDIMM ..................................................................................................................................5DDR2 SDRAM .................................................................................................................... 6-7DDR SDRAM ....................................................................................................................... 8-9SDRAM ...........................................................................................................................10-11Industrial SDRAM ............................................................................................................... 11Flash .................................................................................................................................... 12

PCMCIA CardsMedical Series CompactFlash® Cards ............................................................................... 14Industrial Grade CompactFlash® Cards ............................................................................ 14SRAM Cards ........................................................................................................................ 15Flash Cards ......................................................................................................................... 15Flash Value Cards ............................................................................................................... 15Flash Econo Cards .............................................................................................................. 15ATA Flash Cards .................................................................................................................. 15

PCMCIA Form Factors and Compact Flash ...................................... 14-15Extended Temperature Plastics

SDRAM ................................................................................................................................ 16SDRAM MCPs ...................................................................................................................... 16Registered SDRAM MCPs ................................................................................................... 16DDR SDRAM MCPs ............................................................................................................. 16Registered DDR SDRAM MCPs .......................................................................................... 16DDR2 SDRAM MCPs ........................................................................................................... 16SRAM ....................................................................................................................................17SRAM MCPs .........................................................................................................................17SSRAM MCPs .......................................................................................................................17Flash MCPs ..........................................................................................................................17Mixed Memory MCPs .......................................................................................................... 18

DSP Specifi c Memory ...............................................................................18Part Number Guides ........................................................................... 19-30

Table Of Contents


CommitmentTechnology and Performance Leadership

ISO9001:2000 certifi ed Over twenty-fi ve years of memory design and integration expertise

Memory module and PCMCIA card defi nitions based on JEDEC and other industry standards when applicable

First supplier of commercially viable, memory based multi-chip packages

Engineering interface for custom design and service

State-of-the-art computerized design and simulation

Computerized thermal modeling Strategic vendor relationships and multi-sourcing

Quality Policy and System

Our goal is to deliver the highest quality service and products to our customers. We ensure quality through our policies, procedures, records and audit system. As defi ned in our business management system manual, this system is modeled after the AS9100/ISO9001:2000 Quality System.

Representation and Distribution

We utilizes a worldwide net work of representatives and distributors. To obtain current listings refer to www.whiteedc.com or call (+1) 602-437-1520.

Contact Information

For additional information on White Electronic Designs‘ (WEDC) prod ucts and services refer to:

White Electronic Designs3601 East University DrivePhoenix, Arizona 85034Tel: (+1) 602-437-1520Fax: (+1) [email protected]


Product OverviewMemory Modules

At WEDC, we pride ourselves on a heritage of long-term product support. Our wide-ranging memory module product offering includes: FBDIMM, DDR2, DDR, SDRAM, SSRAM, SRAM and fl ash technologies. We continue to support clients with legacy products as well as supporting custom module design services.

Design Services and Ca pa bil i ties

WEDC provides specialized design services in support of unique needs for nonstandard memory solutions.

Services include:

Circuit design Component selection Vendor selection and management Substrate/microcircuit design and layout High-frequency signal integrity modeling Thermal modeling Pre/post sale engineering support Project management Multi-Chip package design & fabrication Testing Surface mount assembly Chip on board, wire bond or fl ip-chip Anti-tamper technology Obsolescence management

PCMCIA or CF Products

WEDC offers a wide variety of PCMCIA and CompactFlash® memory products. These include SRAM (PCMCIA), Linear Flash (PCMCIA and CF), and NAND based ATA Flash (PCMCIA and Industrial/Medical CF) cards.

Extended Temperature Plastics

WEDC’s extended temperature plastics include monolithic and multi-chip packages. These products are qualifi ed and tested to extended temperatures. Parts are tested to industrial or military temperature ranges with burn-in or temperature cycling available upon request. WEDC ensures re li abil i ty of extended temperature plastic prod ucts by qual i fy ing and mon i tor ing both the supplier and their own part qualifi ca tion.

With careful con sid er ation of environmental con di tions, there are certain military and industrial ap pli ca tions that can realize the benefi ts of extended temperature

plastics. Among the advantag es are po ten tial ly low er cost, prod uct availability, device se lec tion, size and weight, all of which make extended temperature plastics an at trac tive solution.

Multi-Chip Packaging

WEDC is a leading supplier of high reliability memory and mi cro pro ces sor prod ucts in multi-chip packages (MCP). WEDC provides a variety of memory con fi g u ra tions uti liz ing ce ram ic, hermetic and plastic encapsulated microcircuits.

We offer a wide range of screening options, from com mer cial tem per a ture to fully compliant, MIL-PRF-38534 and MIL-PRF-38535. Our high reliability devices are de signed and tested to with stand the most extreme en vi ron ments. These prod ucts are used in critical sys tems for air borne, mis sile, marine, satellite, radar, ord nance and elec tron ic coun ter mea sure ap pli ca tions.

Custom Capability

Continual advances in high per for mance sys tem re quire ments have cre at ed the need for in creased in te gra tion of high-density elec tron ics. Rug ge dized sub systems of fer ing re duced size, lower weight and im proved electrical per for mance are the core of WEDC’s customer and application-specifi c MCP tech nol o gy.

We have the engineering re sourc es, de vel op ment capability and CAD support to design com plex ruggedized MCPs. WEDC also has the re quired tools, ma te ri als and pro cess es for as sem bly and test of these MCPs.


The RoHS Directive:

The directive 2002/95/EC of the European Parliament entered into force on the 13th of February 2003. The aim of this directive, better known as RoHS, is to protect the environment by banning the use of heavy metals (lead, mercury, cadmium, hexavalent chromium) and two brominated compounds (PBB and PBDE) in electronic equipment. This directive was applied throughout the European Union July 1st, 2006.

WEDC’s Position:

Recognizing the complexity and seriousness of this change, WEDC began working well before this directive was voted into legislation. In 2001 our engineering teams began working on research, testing and potential technical solutions for all of our products. During this time, internal teams studied the many options and mechanical implications for this change. This early work prepared us for success through the establishment of strong, fi rst-hand technical knowledge. We are continually leveraging this knowledge to complete our product transitions and present our customers with the best overall product solutions.

Compliance for WEDC’s Memory Module Product Line:

At WEDC, compliance is measured in accordance with the EU directive for RoHS. Our foundation is an implemented system which assures that all components and materials used in our products are themselves compliant. Each assembly location has established procedures, practices and systems implemented to assure and maintain compliance.

Compliant products are easily identifi ed through a newly established part numbering system. This numbering system incorporates a specifi ed designation for compliancy from fi nal product numbers all the way down to the smallest component used on the assembly.

All incoming RoHS designated material is screened to verify compliance to the directive. This screening process, as a minimum, includes 100 percent verifi cation of compliancy by way of a received Certifi cate of Compliance from the materials manufacturer. We utilize X-Ray Fluorescence analysis techniques for added quality protection against receiving non-compliant material. During this process X-Ray Fluorescence is used to analyze a sample of the incoming material. This analysis is capable of reaffi rming the absence of lead substances in the material received. This process enables us to manage and detect any mis-markings which might occur at the material vendor’s location.

In addition to these benefi ts, this technique has capabilities which enable us to assure that previously qualifi ed components are not changed or modifi ed without our knowledge. With this added control over our material, we can generate the extra confi dence our customers demand in our RoHS compliant products.

RoHS Compliant Memory Modules

WEDC implementlead-free products

January 2005

January 2006

July 2005

July 1, 2006June 2005

August 2004

All WEDC commercial DDR2sare RoHS compliant

WEDC’s proactive action:Over four years of research& testing of LF/RoHS WEDC is on target to be 100%

RoHS compliant for commercial products

WEDC shipped1st RoHS products

WEDC formed task team toaddress LF/RoHS directive

WEDC on schedule to havemajority of commercial products lead-free

WEDC Commercial Product RoHS Road Map


Module Memory — DDR2 DRAM FBDIMMDensity Organization Part Number Component Data Rate (Mb/s) Voltage (V)

DDR2 DRAM FBDIMM240 Pin FBDIMM

1GB 128Mx72 W3HG128M72AEF-FxxxG 128Mx4 (18) 533, 667,800* 1.82GB 2x128Mx72 W3HG2128M72AEF-FxxxG 128Mx4 (36) 533, 667,800* 1.82GB 256Mx72 W3HG256M72AEF-FxxxG 256Mx4 (18) 533, 667,800* 1.84GB 2x256Mx72 W3HG2256M72ACEF-FxxxG+ 256Mx4 (36) 533, 667,800* 1.8

8GB 2x512Mx72 W3HG2512M72ACEF-FxxxG• 2x512Mx4 (18), stack 533, 667,800* 1.8

NOTES: G = RoHS compliant Vendor specifi c part numbers are used to provide memory components for source control. The place holder for this is shown as a lower case “x” in the part numbers above

and is to be replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others) For the AMB, a specifi c character is used to provide component source control. The place holder for this is shown as lower case "x" (next to the G) in the part number above. For part number interpretation, please see ‘Part Number Guide’ on page 19.

* Consult factory for avalibility+ In Development(•) Under consideration based on customer needsAll products are available in commercial and industrial tem per a ture ranges.

30.50 (1.201)30.20 (1.189)

PIN 1

17.3 (0.681)TYP.

2.60 (0.102) D(2X)

5.20 (0.205) TYP.

5.0 (0.197) TYP.

123.0 (4.843)TYP.

1.00 (.039)TYP.

0.80 (0.031)TYP.

1.50 (0.059) R(4X)

0.75 (0.0295) R

PIN 120

133.50 (5.256)133.20 (5.244)

67.0 (2.638)TYP.

51.0 (2.008)TYP.

9.50 (0.374)TYP.

BACK VIEW WITH HEAT SPREADER

FRONT VIEW WITH HEAT SPREADER

PIN 240PIN 121

1.25 (0.0492) TYP.

66.68 (2.63) TYP. 0.595 (.0234) R

1.45 (0.057)TYP.

3.90 (0.153)TYP.(X2)

120° (2X)

2.18 (0.086) TYP.

74.68 (2.94)TYP.

3.05 (0.120) TYP.

24.95 (0.982)TYP.

1.37 (0.054)1.17 (0.0476)

7.14 (0.281)MAX

FBDIMM with Heat Spreader


Module Memory — DDR2 SDRAM Density Organization Part Number Component Data Rate (Mb/s) Voltage (V)

DDR2 SDRAM200 Pin SO-CDIMM, Unbuffered 72-bit wide, ECC, w/PLL

512MB 64Mx72 W3HG64M72EEU-PD4 64Mx8 (9) 400-667 1.81GB 2x64Mx72 W3HG264M72EEU-PD4 64Mx8 (18) 400-667 1.81GB 128Mx72 W3HG128M72EEU-PD4• 128Mx8 (9) 400-667 1.82GB 2x128Mx72 W3HG2128M72EEU-PD4 128Mx8 (18) 400-667 1.8

200 Pin SO-DIMM, Unbuffered 64-bit wide, ECC

512MB 64Mx64 W3HG64M64EEU-D4• 64Mx8 (8) 400-667 1.81GB 2x64Mx64 W3HG264M64EEU-D4 64Mx8 (16) 400-667 1.81GB 128Mx64 W3HG128M64EEU-D4• 128Mx8 (8) 400-667 1.82GB 2x128Mx64 W3HG2128M64EEU-D4+ 2x128Mx8 (16) 400-667 1.8

4GB 2x256Mx64 W3HG2256M64ECEU-D4• 2x256Mx8 (8), 2Gb stack 400-667 1.8

200 Pin SO-RDIMM, Registered 72-bit wide, ECC, w/PLL

512MB 64Mx72 W3HG64M72EER-PD4 64Mx8 (9) 400-667 1.81GB 2x64Mx72 W3HG264M72EER-PD4 64Mx8 (18) 400-667 1.81GB 128Mx72 W3HG128M72EER-PD4• 128Mx8 (9) 400-667 1.82GB 2x128Mx72 W3HG2128M72EER-PD4 128Mx8 (18) 400-667 1.8

240 Pin RDIMM, Registered, 72-bit wide, ECC, w/PLL, VLP (.72”)

512MB 64Mx72 W3HG64M72AER-AD6 64Mx4 (18) 400-667 1.81GB 128Mx72 W3HG128M72AER-AD6 128Mx4 (18) 400-667 1.82GB 2x128Mx72 W3HG2128M72ACER-xAD6 2x128Mx4 (18) Stack 400-667 1.82GB 256Mx72 W3HG256M72AER-AD6• 256Mx4 (18) 400-667 1.8

240 Pin DIMM, ECC Registered, 72-bit wide, w/PLL

512MB 64Mx72 WV3HG64M72EER-D6• 64Mx8 (9) 400-667 1.81GB 128Mx72 WV3HG128M72AER-D6• 128Mx4 (18) 400-667 1.81GB 128Mx72 W3HG128M72EER-D6• 128Mx8 (9) 400-667 1.81GB 2x64Mx72 W3HG264M72AER-D6• 64Mx4 (36) 400-667 1.82GB 2x128Mx72 WV3HG2128M72AER-D6• 128Mx4 (36) 400-667 1.82GB 256Mx72 W3HG256M72AER-D6• 256Mx4 (18) 400-667 1.84GB 2x256Mx72 W3HG2256M72AER-D6• 256Mx4 (36) 400-667 1.84GB 512Mx72 W3HG512M72AER-D6• 512Mx4 (18) 400-667 1.88GB 2x512Mx72 W3HG2512M72xER-D6• TBD 400-667 1.88GB 1Gx72 W3HG1G72AER-D6• TBD 400-667 1.8

240 Pin RDIMM, Registered, 72-bit wide, ECC

2GB 2x128Mx72 W3HG2128M72EER-D6• 128Mx8 (18) 400-667 1.8

240 Pin DIMM, Unbuffered, ECC, 72-bit wide

1GB 2 x 64M x 72 WV3HG264M72EEU-D6• 64M x 8 (18) 400-667 1.8

1GB 128M x 72 W3HG128M72AEU-D6• 128M x 4 (18) 400-667 1.8

2GB 256M x 72 W3HG256M72AEU-D6• 256M x 4 (18) 400-667 1.8

4GB 512M x 72 W3HG512M72AEU-D6• 512M x 4 (18) 400-667 1.8

NOTE: For part number interpretation, please see ‘Part Number Guide’ on page 30.

+ In Development(•) Under consideration based on customer needs(ƒ ) Preliminary Product — This product is under development, is not qualifi ed or characterized and is subject to change without notice. All products are available in commercial and industrial tem per a ture ranges.


Module Memory — DDR2 SDRAM continued Density Organization Part Number Component Data Rate (Mb/s) Voltage (V)

DDR2 SDRAM continued240 Pin DIMM, Unbuffered, 64-bit wide

512MB 64Mx64 WV3HG64M64EEU-D6• 64Mx8 (8) 400-667 1.81GB 2x64Mx64 WV3HG264M64EEU-D6• 64Mx8 (16) 400-667 1.81GB 128Mx64 W3HG128M64AEU-D6+ 128Mx4 (16) 400-667 1.8

2GB 2x128Mx64 WV3HG2128M64EEU-D6• 128Mx8 (16) 400-667 1.82GB 256Mx64 W3HG256M64AEU-D6+ 256Mx4 (16) 400-667 1.8

244 Pin Mini-DIMM, Registered, ECC, 72-bit wide, w/PLL

512MB 64Mx72 WV3HG64M72EER-D7 64Mx8 (9) 400-667 1.8

1GB 2x64Mx72 WV3HG264M72EER-D7 64Mx8 (18) 400-667 1.8

1GB 128Mx72 WV3HG128M72EER-D7• 128Mx8 (9) 400-667 1.8

2GB 2x128Mx72 WV3HG2128M72EER-D7• TBD 400-667 1.8

244 Pin VLP Mini-DIMM, Registered, ECC, 72-bit wide, w/PLL (.72 height)

512MB 64Mx72 W3HG64M72EER-AD7• 64Mx8 (9) 400-667 1.81GB 2x64Mx72 W3HG264M72ECER-AD7• 64Mx8 (18) 400-667 1.8

1GB 128Mx72 W3HG128M72EER-AD7• 128Mx8 (9) 400-667 1.82GB 2x128Mx72 W3HG2128M72EER-AD7• 128Mx8 (18) 400-667 1.8


DDR2 JEDEC Specifi cations

Clock Speed Data Rate DDR# CL-tRCD-tRP

WEDCData

Sheet #

MemoryClock Cycle

TImeData RATE

PCBand Width

DDRSingle

ChannelDouble

Channel200MHz 400Mb/s DDR2-400 3-3-3 403 5ns PC3200 3,200 MB/s 3.2 GB/s 6,400 MB/s 6.4 GB/s266MHz 533Mb/s DDR2-533 4-4-4 534 3.75ns PC4300 4,200 MB/s 4.2 GB/s 5,400 MB/s 5.4 GB/s333MHz 667Mb/s DDR2-667 5-5-5 665 3.0ns PC5300 5,333 MB/s 5.3 GB/s 4,200 MB/s 4.2 GB/s400MHz 800Mb/s DDR2-800 6-6-6 806 2.5ns PC6400 6,400 MB/s 6.4 GB/s 4,200 MB/s 4.2 GB/s



(•) Under consideration based on customer needs(ƒ ) Preliminary Product — This product is under development, is not qualifi ed or characterized and is subject to change without notice.

Module Memory — DDR SDRAMDensity Organization Part Number Component Data Rate (Mb/s) Voltage (V)

DDR SDRAM184 Pin DIMM, Unbuffered 64-bit wide

256MB 32M x 64 W3EG6432S-D3-JD3 ƒ 32M x 8 (8) 200 - 400 2.5512MB 2 x 32M x 64 W3EG6462S-D3-JD3• 32M x 8 (16) 200 - 400 2.5512MB 64M x 64 W3EG6464S-D3-JD3 ƒ 64M x 8 (8) 200 - 266 2.5512MB 64M x 64 WV3EG64M64ETSU-D3 ƒ 64M x 8 (8) 333 2.5512MB 64M x 64 W3EG6465S-D3• 64M x 4 (16) 200 - 266 2.51GB 2 x 64M x 64 W3EG64128S-D3-JD3• 64M x 8 (16) 200 - 400 2.51GB 128M x 64 W3EG64129S-D3• 128M x 4 (16) 200 - 266 2.5

184 Pin DIMM, Registered 64-bit wide, w/PLL

1GB 2 x 64M x 64 W3EG264M64ETSR-JD3• 64M x 8 (16) 266 - 333 2.52GB 2 x 128M x 64 W3EG64255S-JD3• 128M x 4 (32) 200 - 333 2.52GB 2 x 128M x 64 W3EG2128M64ETSR-JD3• 128M x 8 (16) 200 - 333 2.5

184 Pin DIMM, Unbuffered 72-bit wide

128MB 16M x 72 W3EG7218S-JD3 ƒ 16M x 8 (9) 200 - 266 2.5256MB 32M x 72 WED3EG7232S-JD3 ƒ 32M x 8 (9) 200 - 266 2.5256MB 2 x 16M x 72 WED3EG7233S-D3-JD3• 16M x 8 (18) 200 - 266 2.5512MB 2 x 32M x 72 W3EG7262S-D3-JD3 ƒ 32M x 8 (18) 200 - 266 2.5512MB 64M x 72 W3EG7264S-D3-JD3 ƒ 64M x 8 (9) 200 - 266 2.51GB 2 x 64M x 72 W3EG72128S-D3-JD3• 64M x 8 (18) 200 - 400 2.5

184 Pin DIMM, Unbuffered 72-bit wide, w/PLL

1GB 128M x 72 W3EG128M72ETSU-D3-JD3-AJD3• 128M x 8 (9) 200 - 400 2.5

184 Pin DIMM, Registered 72-bit wide, w/PLL

256MB 32M x 72 W3EG7234S-D3-JD3-AJD3 ƒ 32M x 4 (18) 200 - 266 2.5256MB 2 x 16M x 72 W3EG7235S-JD3 ƒ 16M x 8 (18) 200 - 266 2.5256MB 32M x 72 W3EG7236S-D3 ƒ 32M x 8 (9) 200 - 266 2.5512MB 64M x 72 W3EG7263S-D3-JD3-AJD3• 64M x 4 (18) 200 - 333 2.5512MB 2 x 32M x 72 W3EG7265S-JD3 ƒ 32M x 8 (18) 200 - 266 2.5512MB 64M x 72 W3EG7266S-D3 ƒ 64M x 8 (9) 200 - 266 2.51GB 2 x 64M x 72 W3EG72125S-D3-JD3-AJD3• 64M x 4 (36) 200 - 333 2.51GB 128M x 72 W3EG72126S-D3-JD3-AJD3 128M x 4 (18) 200 - 333 2.51GB 128M x 72 WV3EG128M72EFSR-D3• 128M x 4 (18) FBGA 200 - 333 2.51GB 2 x 64M x 72 W3EG72129S-JD3 64M x 8 (18) 200 - 400 2.51GB 2 x 64M x 72 W3EG264M72AFSR-D3• 64M x 4 (36) FBGA 200 - 333 2.52GB 2 x 128M x 72 W3EG2128M72AFSR-D3-AD3• 128M x 4 (36) FBGA 200 - 333 2.52GB 2 x 128M x 72 W3EG72255S-D3-JD3-AJD3 • 128M x 4 (36) 200 - 333 2.52GB 256M x 72 W3EG72256S-JD3-AJD3 ƒ 256M x 4 (18) 200 - 333 2.54GB 2 x 256M x 72 W3EG2256M72ASSR-JD3-AJD3 ƒ 256M x 4 (36) 200 - 266 2.5




DDR JEDEC Specifi cations

Clock Speed Data Rate DDR# CL-tRCD-tRP

WEDCData

Sheet #

MemoryClock Cycle

TImeData RATE

PCBand Width

DDRModule

BandwidthBand Width

DDR2200MHz 400Mb/s DDR400 3-3-3 403 5ns PC3200 3,200 MB/s 3.2 GB/s 6,400 MB/s 6.4 GB/s166MHz 333Mb/s DDR300 2.5-3-3 335 6ns PC2700 2,700 MB/s 2.7 GB/s 5,400 MB/s 5.4 GB/s133MHz 266Mb/s DDR266 2-2-2 262 7.5ns PC2100 2,100 MB/s 2.1 GB/s 4,200 MB/s 4.2 GB/s133MHz 266Mb/s DDR266 2-3-3 263 7.5ns PC2100 2,100 MB/s 2.1 GB/s 4,200 MB/s 4.2 GB/s133MHz 266Mb/s DDR266 2.5-3-3 265 7.5ns PC2100 2,100 MB/s 2.1 GB/s 4,200 MB/s 4.2 GB/s100MHz 200Mb/s DDR200 2-2-2 202 7.5ns PC1600 1,600 MB/s 1.6 GB/s 3,200 MB/s 3.2 GB/s

Module Memory — DDR SDRAM continued

Density Organization Part Number Component Data Rate (Mb/s) Voltage (V)

DDR SDRAM continued

200 Pin SO-DIMM, Unbuffered 64-bit wide

256MB 32M x 64 W3EG6432S-D4 ƒ 32M x 8 (8) 200 - 333 2.5256MB 2 x 16M x 64 W3EG6437S-D4 ƒ 16M x 16 (8) 200 - 266 2.5256MB 2 x 16M x 64 WV3EG216M64STSU-D4 ƒ 16M x 16 (8) 333 2.5512MB 64M x 64 W3EG6465S-D4 ƒ 64M x 8 (8) 200 - 266 2.5512MB 2 x 32M x 64 W3EG6467S-D4• 32M x 16 (8) 200 - 400 2.5512MB 2 x 32M x 64 WV3EG232M64STSU-D4 ƒ 32M x 16 (8) 333 2.51GB 2 x 64M x 64 WV3EG264M64EFSU-D4• 64M x 8 (16) FBGA 333 2.51GB 2 x 64M x 64 W3EG264M64EFSU-D4• 64M x 8 (16) FBGA 266 - 400 2.5

200 Pin SO-DIMM, Unbuffered 64-bit wide, w/PLL

256MB 32M x 64 W3EG6433S-AD4-BD4 ƒ 32M x 8 (8) 200 - 333 2.5256MB 32M x 64 W3EG6434S-BD4• 32M x 8 (8) FBGA 266 - 333 2.5512MB 64M x 64 W3EG6464S-AD4-BD4 ƒ 64M x 8 (8) 200 - 333 2.5512MB 2 x 32M x 64 W3EG6466S-AD4-BD4 ƒ 64M x 8 (16) 200 - 333 2.51GB 2 x 64M x 64 W3EG64128S-AD4-BD4 ƒ 128M x 8 (16) 200 - 333 2.51GB 2 x 64M x 64 WV3EG265M64EFSU-D4 ƒ 64M x 8 (16) FBGA 266 - 333 2.5

200 Pin SO-DIMM, Unbuffered 72-bit wide

1GB 2 x 64M x 72 W3EG264M72EFSU-D4• 64M x 8 (18) FGBA 266 - 400 2.5

200 Pin SO-DIMM, Unbuffered 72-bit wide, w/PLL

256MB 32M x 72 W3EG7232S-xAD4-xBD4 ƒ 32M x 8 (9) 200 - 333 2.5512MB 2 x 32M x 72 W3EG7264S-AD4-BD4 ƒ 32M x 8 (18) 200 - 333 2.5512MB 64M x 72 W3EG7266S-AD4-BD4 ƒ 64M x 8 (9) 200 - 400 2.51GB 2 x 64M x 72 W3EG72128S-AD4-BD4 ƒ 64M x 8 (18) 200 - 333 2.5

200 Pin SO-DIMM, Registered 72-bit wide

1GB 2 x 64M x 72 WV3EG264M72ESFR-D4• 64M x 8 (18) FGBA 266 - 333 2.5



Module Memory — SDRAMDensity Organization Part Number Component Frequency (MHz) Voltage (V)

SDRAM

144-Pin SDRAM ECC Unbuffered x72-bit wide SO-DIMM

128MB 16M x 72 W3DG7216V-D1-JD1ƒ 16M x 8 (9) 100 - 133 3.3128MB 16M x 72 W3DG7216V-AD1ƒ 16M x 8 (9) 100 - 133 3.3256MB 32M x 72 W3DG7232V-D1-JD1ƒ 32M x 8 (9) 100 - 133 3.3256MB 32M x 72 W3DG7232V-AD1ƒ 32M x 8 (9) 100 - 133 3.3512MB 64M x 72 W3DG7268V-AD1ƒ 64M x 8 (9) 100 - 133 3.3512MB 64M x 72 W3DG7268V-D1-JD1ƒ 64M x 8 (9) 100 - 133 3.3

144-Pin SDRAM ECC Unbuffered x72-bit wide SO-DIMM, w/PLL

512MB 2 x 32M x 72 WED3DG7264V-D1ƒ 32M x 8 (18) Stack 100 - 133 3.3512MB 64M x 72 W3DG7266V-D1ƒ 64M x 8 (9) Stack 100 - 133 3.31GB 2 x 64M x 72 W3DG72128V-D1• 64M x 8 (18) Stack 100 - 133 3.3

144-Pin SDRAM Unbuffered x64-bit wide SO-DIMM

32MB 4M x 64 WED3DG644V-D1 4M x 16 (4) 100 - 133 3.364MB 8M x 64 W3DG647V-D1 8M x 8 (8) 100 - 133 3.364MB 2 x 4M x 64 W3DG648V-D1 4M x 16 (8) 100 - 133 3.364MB 8M x 64 WED3DG649V-D1 8M x 16 (4) 100 - 133 3.3128MB 2 x 8M x 64 W3DG6416V-D1ƒ 8M x 16 (4) 100 - 133 3.3128MB 16M x 64 WED3DG6417V-D1 16M x 16 (4) 100 - 133 3.3128MB 16M x 64 W3DG6418V-AD1ƒ 16M x 8 (8) 100 - 133 3.3128MB 16M x 64 W3DG6418V-D1-JD1ƒ 16M x 8 (8) 100 - 133 3.3256MB 2 x 16M x 64 WED3DG6432V-D1 16M x 16 (8) 100 - 133 3.3256MB 32M x 64 W3DG6433V-D1 32M x 16 (4) 100 - 133 3.3256MB 32M x 64 W3DG6433V-JD1 32M x 16 (4) 100 - 133 3.3256MB 32M x 64 WED3DG6435V-D1-JD1 32M x 8 (8) 100 - 133 3.3256MB 32M x 64 WED3DG6435V-AD1 32M x 8 (8) 100 - 133 3.3512MB 2 x 32M x 64 W3DG6465V-D1 32M x 16 (8) 100 - 133 3.3512MB 64M x 64 WED3DG6466V-AD1 64M x 8 (8) 100 - 133 3.3512MB 64M x 64 WED3DG6466V-D1-JD1 64M x 8 (8) 100 - 133 3.3

144-Pin SDRAM Unbuffered x64-bit wide SO-DIMM, w/PLL

512MB 2 x 32M x 64 W3DG6464V-D1 32M x 8 (16) Stack 100 - 133 3.31GB 2 x 64M x 64 W3DG64128V-D1ƒ 64M x 8 (16) Stack 100 - 133 3.3

168-Pin SDRAM ECC Registered x72-bit wide DIMM, w/PLL

256MB 32M x 72 W3DG7232V-D2 32M x 8 (9) 100 - 133 3.3256MB 32M x 72 W3DG7233V-D2ƒ 32M x 4 (18) 100 - 133 3.3512MB 64M x 72 W3DG7263V-D2ƒ 64M x 4 (18) 100 - 133 3.3512MB 64M x 72 W3DG7266V-D2• 64M x 8 (9) 100 - 133 3.31GB 128M x 72 W3DG72127V-D2 128M x 4 (18) 100 - 133 3.31GB 2 x 64M x 72 W3DG72128V-D2ƒ 128M x 4 (18) Stack 100 - 133 3.32GB 2 x 128M x 72 W3DG72256V-D2• 256M x 4 (18) Stack 100 - 133 3.3


(•) Under consideration based on customer needs(ƒ ) Preliminary Product — This product is under development, is not qualifi ed or characterized and is subject to change without notice. NOTE: Consult factory for availability of:

– RoHS compliant products – Vendor source control options – Industrial temperature option


Module Memory — SDRAMDensity Organization Part Number Component Frequency (MHz) Voltage (V)

SDRAM continued168-Pin SDRAM ECC Unbuffered x72-bit wide DIMM

128MB 16M x 72 W3DG7217V-D2ƒ 16M x 8 (9) 100 - 133 3.3256MB 32M x 72 W3DG7234V-D2ƒ 16M x 8 (18) 100 - 133 3.3256MB 32M x 72 W3DG7237V-D2• 32M x 8 (9) 100 - 133 3.3512MB 64M x 72 W3DG7265V-D2• 64M x 8 (9) 100 - 133 3.3512MB 2 x 32M x 72 W3DG7267V-D2• 32M x 8 (18) 100 - 133 3.31GB 2 x 64M x 72 WED3DG72126V-D2• 64M x 8 (18) 100 - 133 3.3

168-Pin SDRAM Unbuffered x64-bit wide DIMM

64MB 2 x 4M x 64 W3DG648V-D2ƒ 4M x 16 (8) 100 - 133 3.364MB 8M x 64 WED3DG649V-D2ƒ 8M x 16 (4) 100 - 133 3.3128MB 2 x 8M x 64 W3DG6416V-D2ƒ 8M x 16 (8) 100 - 133 3.3128MB 16M x 64 W3DG6417V-D2ƒ 16M x 16 (4) 100 - 133 3.3128MB 16M x 64 W3DG6418V-D2ƒ 16M x 8 (8) 100 - 133 3.3128MB 2 x 8M x 64 WED3DG6419V-D2ƒ 8M x 8 (16) 100 - 133 3.3256MB 32M x 64 W3DG6430V-D2ƒ 32M X 4 (16) 100 - 133 3.3256MB 2 x 16M x 64 W3DG6432V-D2ƒ 16M x 16 (8) 100 - 133 3.3256MB 32M x 64 W3DG6433V-D2• 32M x 16 (4) 100 - 133 3.3256MB 2 x 16M x 64 W3DG6434V-D2 16M x 8 (16) 100 - 133 3.3256MB 32M x 64 W3DG6435V-D2ƒ 32M x 8 (8) 100 - 133 3.3512MB 2 x 32M x 64 W3DG6463V-D2ƒ 32M x 8 (16) 100 - 133 3.3512MB 2 x 32M x 64 W3DG6465V-D2• 32M x 16 (8) 100 - 133 3.3512MB 64M x 64 WED3DG6466V-D2• 64M x 8 (8) 100 - 133 3.31GB 2 x 64M x 64 W3DG64126V-D2 64M x 8 (16) 100 - 133 3.3


Industrial Temperature Tested Memory — Industrial SDRAMDensity Organization Part Number Features Speed (MHz) Voltage (V) Package

Industrial SDRAM64Mb 1M x 16 x 4 EDI416S4030A-SI Industrial SDRAM 83 - 125 3.3 54 TSOP128Mb 2M x 16 x 4 WED416S8030A-SI Industrial SDRAM 83 - 125 3.3 54 TSOP256Mb 4M x 16 x 4 WED416S16030C-SI Industrial SDRAM 100 - 125 3.3 54 TSOP II

(•) Under consideration based on customer needs(ƒ ) Preliminary Product — This product is under development, is not qualifi ed or characterized and is subject to change without notice. NOTE: Consult factory for availability of: – RoHS compliant products

– Vendor source control options – Industrial temperature option

All products are available in commercial and industrial tem per a ture ranges.


Module Memory — FlashDensity Organization Part Number Speed (ns) Voltage (V)

FlashIntel - 80 SIMM, Angled

4MB 1M x 32 EDI7F341MV-BNC 120 - 150 3.38MB 2 x 1M x 32 EDI7F2341MV-BNC 120 - 150 3.38MB 2 x 1M x 32 EDI7F2341MC-BNC 90 - 150 54MB 1M x 32 EDI7FG341MC-BNC 90 - 150 58MB 2M x 32 EDI7F342MV-BNC 120 - 150 3.38MB 2M x 32 EDI7F342MC-BNC 90 - 150 516MB 4 x 1M x 32 EDI7F4341MV-BNC 120 - 150 3.316MB 4 x 1M x 32 EDI7F4341MC-BNC 90 - 150 516MB 4M x 32 WED7F324XDNSN 120 - 150 3.316MB 4M x 32 WED7F324XE3SN 70 - 120 3.332MB 4 x 2M x 32 EDI7F4342MV-BNC 120 - 150 3.332MB 2 x 4M x 32 WED7F2324XDNSN 120 - 150 3.332MB 4 x 2M x 32 EDI7F4342MC-BNC 90 - 150 564MB 2 x 8M x 32 EDI7F2328XDNSN 120 - 150 3.3

AMD - 80 SIMM, Angled

2MB 512K x 32 EDI7F33512V-BNC 80 - 120 3.32MB 512K x 32 EDI7F33512C-BNC 80 - 150 54MB 2 x 512K x 32 EDI7F233512V-BNC 80 - 120 3.34MB 2 x 512K x 32 EDI7F233512C-BNC 80 - 150 54MB 1M x 32 EDI7F331MV-BNC 80 - 150 3.34MB 1M x 32 EDI7F331MC-BNC 80 - 150 54MB 1M x 32 W7G1M32SVx-BN 70 - 120 3.34MB 1M x 32 W7GM1M32SVx-BN (Mirror Bit) ƒ 70 - 120 3.38MB 4 x 512K x 32 EDI7F433512V-BNC 80 - 120 3.38MB 4 x 512K x 32 EDI7F433512C-BNC 80 - 150 58MB 2 x 1M x 32 EDI7F2331MV-BNC 80 - 150 3.38MB 2 x 1M x 32 EDI7F2331MC-BNC 90 - 150 58MB 2M x 32 EDI7F332MV-BNC 90 - 120 3.38MB 2M x 32 EDI7F332MC-BNC 90 - 150 58MB 2 x 1M x 32 W7G21M32SVx-BN 70 - 120 3.38MB 2 x 1M x 32 W7GM21M32SVx-BN (Mirror Bit) ƒ 70 - 120 3.316MB 2 x 2M x 32 EDI7F2332MC-BNC 90 - 150 516MB 2 x 2M x 32 EDI7F2332MV-BNC 90 - 120 3.316MB 4 x 1M x 32 EDI7F4331MV-BNC 80 - 150 3.316MB 4 x 1M x 32 EDI7F4331MC-BNC 80 - 150 5

Intel/Strata

8MB 8M x 32 WED7F328XDNSN 120 - 150 3.364MB 2 x 8M x 32 WED7F2328XDNSN 120 - 150 3.3

ST Micro

2MB 512K x 32 WED7F325ZXEBSN-C 70 - 150 54MB 2 x 512K x 32 WED7F2325ZXEBSN-C 70 - 150 58MB 4 x 512K x 32 WED7F4325ZXEBSNyyc 90 - 150 5

Flash MCP16MB 2M x 64 W72M64V-XBX 70 - 100 3.332MB 8M x 32 W78M32V-XBX 70 - 100 3.364MB 8M x 64 W78M64V-XSBX 70 - 100 3.3



Wide Selection of Data Storage Devices

WEDC offers PCMCIA memory cards in SRAM, linear fl ash, industrial CF and ATA fl ash technologies and has the widest capacity range on the market: 256KB to 8GB. Our PCMCIA memory cards are available in standard PCMCIA type I, II and III form factors. We have the right data storage solution to meet your needs.

Standard Features Standard 68-pin PCMCIA interface Standard 50-pin CF interface Largest overall capacity range: 256KB to 8GB Upgradeable Low power consumption Universal 3V to 5V operation for ATA fl ash Standard 5V operation for SRAM & linear fl ash (3V/5V optional) Inherently shock resistant: no moving parts Ideal for mobile, portable and battery operated applications

Custom solutions available to fi t every need

SRAM Largest capacity currently available: 16MB Super low power consumption Fast access times Rechargeable lithium battery for data retention Larger life-time capacity battery (optional) Write protect switch (optional)

Linear Flash Widest memory capacity range on market: 256KB to 192MB

AMD compatible Intel compatible Write protect switch (optional)

ATA Flash Very large data storage capacity: up to 8GB Low cost data storage Universal wide operating voltage range: 3V to 5V DOS-compatible fi le format High speed data transfer High data reliability Three variations of mode access:

– Memory card mode– I/O mode– True IDE mode

Internal self diagnostic program, operates at Vcc power on

PCMCIA Memory Cards & CompactFlash®CompactFlash Cards

Storage Capacities:– 128MB, 256MB, 512MB, 1GB, 2GB, 4GB

and 8GB Environment conditions:

– Operating temperature: -40°C to 85°C– Storage temperature: -55°C to 125°C

CompactFlash® compatibility:– CFA standard 2.1 compliant– 3.3V or 5.0V single power supply– 50 pin connector with Type-I form factor

(3.3mm thickness)– 256 Bytes of attribute memory

Power consumption:– 5V operation

Active modeWrite operation: 28 mA (Typ.), 30 mA (Max.)Read operation: 23 mA (Typ.), 30 mA (Max.)Sleep mode: 2.0mA (max.)

– 3.3V operationActive modeWrite operation: 28 mA (Typ.), 30 mA (Max.)Read operation: 23 mA (Typ.), 30 mA (Max.)Sleep mode: 2.0mA (max.

RoHS compliant Interface modes:

– PC card memory mode– PC card I/O mode– True IDE mode

Less than 1 Error in 1014 bits read MTBF > 4,000,000 hours High shock & vibration tolerance W/E Endurance: 4,000,000 write/erase cycles High performance:

– Interface Transfer speed in PIO mode 4 or Multi Word DMA mode 2 cycle timing; up to 16.7 MB/second (PIO mode 3 & 4 are available in IDE mode only).

– Typical write: 5.0 MBytes/s in ATA PIO mode 4– Typical read: 7.0 MBytes/s in ATA PIO mode 4– On card ECC up to 6 Bytes per 512 Byte data

sector Dimensions:

– Type I card : 36.4mm(L) x 42.8mm(W) x 3.3mm(H)

Highly resistant to data corruption due to power loss or card removal


Industrial Grade CompactFlash® CardsDensity Part Number Temperature Voltage (V) Product Family

Industrial Grade CF Cards128 MByte W7NCF128H10IS2xG I 3.3/5 CF256 MByte W7NCF256H20IS3xG I 3.3/5 CF512 MByte W7NCF512H20IS4xG I 3.3/5 CF1 GByte W7NCF01GH20IS4xG I 3.3/5 CF2 GByte W7NCF02GH10IS6xG I 3.3/5 CF4 GByte W7NCF04GH10IS7xG I 3.3/5 CF8 GByte W7NCF08GH20ISAxG I 3.3/5 CF

The W7NCFxxx-H Series CompactFlash card is an ATA interface fl ash memory card based on fl ash technology. This CompactFlash card series is constructed with a 32 bit RISC based controller and SLC NAND fl ash memory devices. The card operates from a single 5-Volt or 3.3-Volt power source, and is available in CompactFlash type-I form factor with 128MB, 256MB, 512MB, 1GB, 2GB, 4GB and 8GB capacity. Able to emulate IDE hard disk drives and certifi ed in accordance with the CompactFlash Certifi cation Plan.NOTE: For part number interpretation, please see ‘Part Number Guide’ on page 28.

Medical Series CompactFlash® CardsDensity Part Number Temperature Voltage (V) Product Family

Industrial Grade CF Cards128 MByte W7NCF128H20IS3xM1G I 3.3/5 CF256 MByte W7NCF256H20IS4xM1G I 3.3/5 CF512 MByte W7NCF512H10IS6xM1G I 3.3/5 CF1 GByte W7NCF01GH10IS7xM1G I 3.3/5 CF2 GByte W7NCF02GH20ISAxM1G I 3.3/5 CF4 GByte W7NCF04GH20ISAxM1G I 3.3/5 CF8 GByte W7NCF08GH20ISAxM1G I 3.3/5 CF

The W7NCF-H-M1 series CompactFlash product family is designed for high reliability and robust operation. This product offers a strictly controlled and locked bill of materials and the robust operation, which is desired in many medical applications. The product’s reliability backbone is established by using a 32-bit RISC based controller along with the best single level cell (SLC) NAND fl ash memory devices. Utilizing proprietary techniques, our cards offer both fi rmware and hardware features which mitigate problems relating to power disturbances and interruptions. Implemented is the industry leading ECC protection which is capable of correcting 6 bytes in every 512-byte sector. This leading ECC protection combined with patented static wear leveling technology provides the highest read/write endurance possible.NOTE: For part number interpretation, please see ‘Part Number Guide’ on page 25.

CompactFlash® Form Factor

4xR 0.5mm ± .1 (4xR.020 in ± . 004)

41.66mm ± .13(1.640 in ±. 005)

42.80mm ± .10(1.685 in ± . 004) 0.63mm ± .07(.025 in ± . 003)

.01mm ± .07(.039 in ± . 003)

26 50

1 25

.99mm ± .05 (.039 in ± . 002)

.01mm ± .07(.039 in ± . 003) 3.30mm ± .10 (.130 in ± . 004)

1.60mm ± .05 (.063 in ± . 002)

0.76mm ± .07(0.30 in ± . 003)

m

m

0

0 .

3

x

2 ±

7 0 .

n i

8 1

1 .

x

2 (

. ±

) 3

0 0

m

m

0 4

. 6

3 ±

n i

3 3

4 .

1 (

5 1 .

± . )

6 0

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m

m

8 7 . 5 2 x 2

± 5 1 0 . 1 x 2 ( 7 0 . ± .

) 3 0 0

m

m

0 0 . 2 1 x 2 ±

0 1 . n i 2 7 4 x 2 (

. ±

) 4 0 0

2.15mm ± .07 (.085 in x .003)


PCMCIA CardsDensity Part Number Organization Speed (MHz) Voltage (V) Product Family

SRAM Cards256KB - 6MB 256Kb,1,2, & 4Mb x16/x8 150 5 SRA01-SRA04256KB - 512KB 256Kb,1,2, & 4Mb x8 150 5 SRE01-SRE042MB - 16MB 16Mb x16/x8 150 3/5 SRV31-SRV34

Flash Cards256KB - 2.5MB Catalyst 28F010 x16/x8 150, 200 5 FLG01 - FLG04512KB - 5MB Catalyst 28F020 x16/x8 150, 200 5 FLG05 - FLG082MB - 20MB Intel/Sharp 28F008SA x16/x8, S2 Reg 150, 200 5 FLA21 - FLA24

x16/x8 150, 200 5 FLA51 - FLA542MB - 20MB Intel/Sharp 28F008S5 x16/x8, S2 Reg 150, 200 5 FLA25 - FLA28

x16/x8 150, 200 5 FLA55 - FLA584MB - 40MB Intel/Sharp 28F016S5 x16/x8, S2 Reg 150, 200 5 FLA29 - FLA32

x16/x8 150, 200 5 FLA59 - FLA622MB - 20MB Intel/Sharp 28F008SC x16/x8, S2 Reg 150, 200 3/5 FLV21 - FLV24

x16/x8 150, 200 3/5 FLV51 - FLV544MB - 40MB Intel/Sharp 28F016SC x16/x8, S2 Reg 150, 200 3/5 FLV25 - FLV28

x16/x8 150, 200 3/5 FLV55 - FLV582MB - 20MB AMD 29F080B x16/x8 150, 200 5 FLB25 - FLB284MB - 40MB AMD 29F016D x16/x8 150, 200 5 FLB21 - FLB241MB - 10MB AMD 29F040B x16/x8 150, 200 5 FLC01 - FLC044MB - 40MB AMD 29F017D x16/x8 150, 200 5 FLD21 - FLD248MB - 64MB AMD 29F032B x16/x8 150, 200 5 FLE21 - FLE248MB - 192MB Intel 28F128J3 x16/x8 250 3/5 FLF11 - FLF14

Flash Value Cards2MB - 8MB Intel/Sharp 28F008SA x16 100 5 FVA01 - FVA022MB - 8MB Intel/Sharp 28F008S5 x16 150 5 FVA03 - FVA044MB - 16MB Intel/Sharp 28F016S5 x16 150 5 FVA05 - FVA068MB - 64MB Intel 28F640J5/320J5 x16 200 5 FVF01 - FVF0416MB - 64MB Intel 28F128J3/640J3/320J3 x16 200 3/5 FVF11 - FVF14

Flash Econo Cards128KB - 512KB Catalyst 28F010 x8 200 5 FEC01 - FEC02128KB - 512KB Catalyst 28FO20 x8 200 5 FEC03 - FEC041MB - 4MB Intel/Sharp 28F008SA x8 150 5 FEA011MB - 4MB Intel/Sharp 28F008S5 x8 150 5 FEA032MB - 8MB Intel/Sharp 28F016S5 x8 150 5 FEA051MB - 4MB AMD 29F080B x8 150 5 FEB01

ATA Flash Cards128MB - 8GB Sandisk Flash x16/x8 250 3/5 ATA34128MB - 4GB Samsung Flash x16/x8 250 3/5 ATA80128MB - 8GB Samsung Flash x16/x8 250 3/5 W7NCF

PCMCIA Form Factors

3.3mm (.12992) 53.9mm

(2.12204)

85.6mm (3.37007)

85.6mm (3.37007)

85.6mm (3.37007)

3.3mm (.12992)

TYPE I

3.3mm (.12992)

10.5mm (.41339)

TYPE III

3.3mm (.12992)

5.0mm (.19685)

TYPE II


FBDIMM Part Number Guide

PrefixMemory (DRAM)Technology (DDR 2)Gold2 Rank (”Blank” = 1 Rank)DepthBus WidthComponent Width (x4)C = Die Stacked BGA (”Blank” = Standard FBGA packaging)Core Voltage (1.8V)Fully BufferedProduct Revision (”Blank” = Initial revision. For all other characters please see Notes 1 & 2)Speed (Mb/s)Package 240 Pin (30mm) (F1 = Fully metal Heat Spreader option) (F2 = AMB Head Spreader only)Component Vendor Name (M = Micron) (S = Samsung) (See Notes2)AMB Codes (IDT = A) (NEC = B) (See Notes2)G = RoHS Compliant

W 3 H G 2 256M 72 A C E F x xxx Fx x x G

NOTE1: This character represents the general product revision that is used to control and record any changes in the AMB and memory die revision, as well as any other design changes.

NOTE2: To obtain the most current revision, please contact the factory.


SRAM Part Number Guide

NOTE: The Part Number Guides should only be used to decipher existing part numbers. EDI prefi x – pre-merger parts; WED/W prefi x post-merger parts.See datasheets for more detailed information.

Prefix Product Group 8 = SRAM 9 = Custom/Semi-Custom Substrate F = FR4 with Tin Lead Contacts G = FR4 with Gold Contacts L = Multi-chip Package (MCP); Laminate Banks 2 = Dual Bank 4 = Quad Bank Blank = Single Bank Data Bus Width 24 = 24 bits 64 = 64 bits 32 = 32 bits 72 = 72 bits 36 = 36 bits Density 128 = 128K 512 = 512K 129 = 128K (1CE) 513 = 512K (1CE) 256 = 256K 514 = 512K (3CE) 257 = 256K (1CE) 1024 = 1M 258 = 256K (3CE) 2048 = 2M Technology C = CMOS (5.0V) V = CMOS (3.3V) LP = CMOS Low Power Speed 10 = 10ns 25 = 25ns 12 = 12ns 70 = 70ns 15 = 15ns 85 = 85ns 20 = 20ns RAM Component Package Blank = Die Based (MCP) A = PLCC B = TSOP M = SOJ P = SOIC Package 3 = DIP, Pins on 300 mil centers G = PGA 4 = DIP, Pins on 400 mil centers L = PQFP 6 = DIP, Pins on 600 mil centers M = Straight SIMM 9 = DIP, Pins on 900 mil centers N = Angled SIMM A = PLCC P = SOIC B = PBGA S = SIP D = DIMM Z = ZIP Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

EDI 8 F X 32 128 C 20 M Z C


SSRAM (new products) Part Number Guide


Prefix Product Group 2 = Synchronous SRAM Architecture A = Flow Through B = Pipeline C = Flow Through with Sleep Mode D = Pipeline with Sleep Mode E = Pipeline with Dual Cycle Deselect G = Flow Through with Sleep Mode, Configured for Non-Burst H = Pipeline with Sleep Mode, Configured for Non-Burst F = Flow Through with Dual Cycle Deselect Q = QDR Y = Sync Flow Through - NBL Z = Sync Pipeline Burst - NBL Banks 2 = Dual Bank 4 = Quad Bank Blank = Single Bank Address Density XXXK = 16/32/64/128/256/512 XXXM = 1/2/4/8/16/32/64/128 Data Width 8 = Byte 64 = Quad Word 16 = Word 72 = Quad Word with ECC 32 = Double Word 80 = Custom 36 = Double Word with ECC 128 = Double Quad Word 40 = Custom 144 = Double Quad Word with ECC Technology (Voltage and Interface) C = CMOS 5.0V (Core/IO) J = 1.8V w/ HSTL interface E = LVCMOS 3.3/2.5V (Core/IO) S = LVCMOS 2.5V (Core/IO) F = Future V = LVCMOS 3.3V (Core/IO) H = 2.5V w/ HSTL interface Speed (Core) 42 = 4.2ns 30 = 3.0ns 38 = 3.8ns 28 = 2.8ns 35 = 3.5ns 26 = 2.6ns Package B = BGA D2 = 168 Dual Key DIMM B2 = 13 x 15mm-165 BGA DG = 120 Card Edge DIMM-Gold D = 120 Card Edge DIMM D1G = 144 SO-DIMM-Gold D1 = 144 SO-DIMM D2G = 168 Dual Key DIMM-Gold Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

W 2 Z 1M 72 S 30 B C

X


SSRAM (old products) Part Number Guide


Prefix Product Group 2 = Synchronous SSRAM Functionality A = Flow Through B = Pipeline C = Flow Through with Sleep Mode D = Pipeline with Sleep Mode E = Pipeline with Dual Cycle Deselect F = Flow Through with Dual Cycle Deselect G = Flow Through with Sleep Mode, Configured for Non-Burst H = Pipeline with Sleep Mode, Configured for Non-Burst Q = QDR (2) Y = Sync Flow Through - ZBT™ Z = Sync Pipeline Burst - ZBT™ Substrate G = FR4 with Gold Contacts L = Multi-chip Package (MCP); Laminate Banks 2 = Dual Bank 3 = Triple Bank 4 = Quad Bank Blank = Single Bank Data Bus Width 32 = 32 bits 64 = 64 bits 36 = 36 bits 72 = 72 bits Density 128 = 128K 1M = 1M 256 = 256K 2M = 2M 512 = 512K Technology C = CMOS (Core & I/O = 5.0V) E = LVCMOS (Core = 3.3V, I/O = 2.5V to 3.3V) F = Future H = HSTL (Core & I/O = 2.5V) S = LVCMOS (Core & I/O = 2.5V) V = LVCMOS (Core & I/O = 3.3V) Speed 25 = 2.5ns 75 = 7.5ns 11 = 11ns 35 = 3.5ns 8 = 8ns 12 = 12ns 38 = 3.8ns 85 = 8.5ns 15 = 15ns 40 = 4ns 9 = 9ns 42 = 4.2ns 10 = 10ns Package B = BGA D1 = 144 SO-DIMM D = 120 Card Edge D2 = 168 DIMM Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

WED 2 C G 4 32 128 V 9 D2 C EDI


SDRAM (new products) Part Number Guide

NOTE: The Part Number Guides should only be used to decipher existing part numbers. EDI prefi x – pre-merger parts; WED/W prefi x post-merger parts. See datasheets for more detailed information.

Prefix Product Group 3 = Synchronous DRAM Architecture D = Sync DRAM - SDR E = Sync DRAM - DDR F = Fast Cycle Ram R = (Future) Banks 2 = Dual Bank 4 = Quad Bank Blank = Single Bank Address Density XXXM = 1/2/4/8/16/32/64/128 Data Width 32 = Double Word 72 = Quad Word with ECC 36 = Double Word with ECC 128 = Double Quad Word 64 = Quad Word 144 = Double Quad Word with ECC Technology (Voltage and Interface) S = LVCMOS 2.5V (Core/IO) V = LVCMOS 3.3V (Core/IO) Speed (Core) SDR DDR 7 = 133MHz; CL=2 333 = 166MHz/332Mbps 75 = 133MHz; CL=3 266 = 133MHz/266Mbps 8 = 125MHz; CL=2 200 = 100MHz/200Mbps 10 = 100MHz; CL=2 Package B = BGA D3 = 184 DIMM-Gold B2 = 13 x 15mm-165 BGA D4 = 200 SO-DIMM-Gold D1 = 144 SO-DIMM-Gold D5 = 200 DIMM-Gold D2 = 168 Dual Key DIMM-Gold Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

W 3 E 16M 64 S 266 B C X


SDRAM (old products) Part Number Guide


Prefix Product Group 3 = SDRAM SDRAM Functionality D = SDRAM E = Double Data Rate SDRAM Substrate G = FR4 with Gold Contacts L = Laminate (MCP only) Data Bus Width 32 = 32 bits 64 = 64 bits 72 = 72 bits Density 1 = 1M 2 = 2M 4 = 4M 8 = 8M 16 = 16M 32 = 32M 64 = 64M Technology V = CMOS (3.3V) S = DDR (2.5V) Option L = Power Speed SDRAM DDR 10 = 100MHz; CL = 2 335 = 167MHz/333Mbps; CL = 2.5 7 = 133MHz; CL = 2 262 = 133MHz/266Mbps; CL = 2 7.5 = 133MHz; CL = 3 265 = 133MHz/266Mbps; CL = 2.5 202 = 100MHz/200Mbps; CL = 2 CAS Latency Package D1 = 144 SO-DIMM D2 = 168 DIMM D3 = 184 DIMM D4 = 200 SO-DIMM D5 = 200 Pin DIMM Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

WED 3 E G 64 16 S 26 D3 X 2 P


Flash Part Number Guide

NOTE: The Part Number Guides should only be used to decipher existing part numbers. EDI prefi x – pre-merger parts; WED/W prefi x post-merger parts. See datasheets for more detailed information.

Prefix Product Group 7 = FLASH Substrate F = FR4 with Tin Lead Contacts G = FR4 with Gold Contacts L = Multi-chip Package (MCP); Laminate Banks Blank = Single 2 = Dual Banks 4 = Quad Banks Data Bus Width 8 = x8 32 = x32 16 = x16 64 = x64 Density 1Z = 128K 4 = 4M 2Z = 256K 8 = 8M 5Z = 512K 16 = 16M 1 = 1M 32 = 32M 2 = 2M Option Features A = All Interface Options (MCP) V = Vpp B = Rdy/Bsy X = None C = Rdy/Bsy & Reset Y = Reset & Vpp R = Reset Base Component Width D = x8/x16 E = x8 S = x16 Vendor/Voltage Option 3 = AMD; 3V J = Micron; 5V 5 = AMD; 5V K = Micron; 3V A = Atmel L = Intel; C3 B = STmicro, 5.0V (AMD) M = Intel; StrataFlash® [J5] C = Intel; SA (Dual Voltage) N = Intel; StrataFlash® [J3] D = Intel; S3 S = Sharp; S3 E = Intel; S5 T = Sharp; SV (Smart Voltage) F = STmicro, 3.3V (Intel) U = Sharp; S5 G = STmicro, 3.3V (AMD) V = Intel; SV (Smart Voltage) H = Hyundai, 5.0V (AMD Compatible) X = SSTI; 5V I = Hyundai, 3.3V (AMD Compatible) Y = SSTI; 3V Flash RAM Architecture B = Bottom Boot S = Symmetrical T = Top Boot Package B = BGA M = SIMM; 80 C = DIP; 0.600" N = Angled SIMM; 80 D = SO-DIMM; 144 S = SO-DIMM; 72 J = Surface Mount 68 Lead Speed 55 = 55ns 90 = 90ns 60 = 60ns 10 = 100ns 70 = 70ns 12 = 120ns 80 = 80ns 15 = 150ns Temperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºC

7 F 2 32 16 X E D S D 10 C WED EDI


PC card Part Number Guide

NOTE:The Part Number Guides should only be used to decipher existing part numbers. EDI prefi x – pre-merger parts; WED/W prefi x post-merger parts.See datasheets for more detailed information.

PrefixTechnology 7P = Flash 8P = SRAMPC Card P = Standard PCMCIA/Data StorageCapacity SRAM = 256KB - 16MB Flash = 256KB - 192MB ATA = 128MB - 8GBCard Family & Version - see datasheet for detailsPackaging Options 00 = Type I WEDC Labeled 04 = Type II Blank 01 = Type I Blank 05 = Type II Recessed Blank 02 = Type I Released Blank 13 = Type III WEDC Labeled 03 = Type II WEDC Labeled 14 = Type III BlankTemperature Range C = Commercial 0ºC to +70ºC I = Industrial -40ºC to +85ºCCard Access Time 10 = 100ns 15 = 150ns 25 = 250ns

P 002 SRA04 00 C 15 WED 8


Industrial Grade CompactFlash® Part Number Guide

NOTE:The Part Number Guides should only be used to decipher existing part numbers. EDI prefi x – pre-merger parts; WED/W prefi x post-merger parts.See datasheets for more detailed information.

WEDC:Flash Card, SLC - NAND:CompactFlash®:Memory Capacity 128 = 128M Byte 256 = 256M Byte 512 = 512M Byte 01G = 1G Byte 02G = 2G Byte 04G = 4G Byte 08G = 8G ByteController Manufacturer: H = H-SeriesController/Firmware Revision Number: 1, 2, 3...Labels or Custom Labeling: 0 = labels front and back 1 = labels on back onlyTemperature: C = Commercial (0ºC to -70ºC) I = Industrial (-40ºC to +85ºC)Memory Mfg: S = SamsungMemory Device Information: 2 = 512Mbit single die package 7 = 8Gb dual die package 3 = 1Gb single die package 8 = 8Gb single die package 4 = 2Gb single die package 9 = 16Gb quad die package 5 = 4Gb dual die package A = 16Gb dual die package 6 = 4Gb single die package B = 16Gb single die packageOptions: B = Standard CF card configuration A = Standard CF with conformal coating C = Standard card with DMA disabled D = Standard card with DMA disabled and conformal coating E = Fixed disk option (for compatibility with some embedded software) F = Fixed disk with conformal coating H = Fixed with DMA disable J = Fixed disk with DMA disable and conformal coatingG = for RoHS

7N CF xxx H x x x x x x0

W


Medical Series CompactFlash® Part Number Guide

WEDC:Flash Card, SLC - NAND:CompactFlash®:Memory Capacity 128 = 128M Byte 256 = 256M Byte 512 = 512M Byte 01G = 1G Byte 02G = 2G Byte 04G = 4G Byte 08G = 8G ByteController Manufacturer: H = H-SeriesController/Firmware Revision Number: 1, 2, 3...Labels or Custom Labeling: 0 = labels front and back 1 = labels on back onlyTemperature: C = Commercial (0ºC to -70ºC) I = Industrial (-40ºC to +85ºC)Memory Mfg: S = SamsungMemory Vendor Revision: Blank = Initial release A = Subsequent releases etc.Memory Device Information: 2 = 512Mbit single die package 7 = 8Gb dual die package 3 = 1Gb single die package 8 = 8Gb single die package 4 = 2Gb single die package 9 = 16Gb quad die package 5 = 4Gb dual die package A = 16Gb dual die package 6 = 4Gb single die package B = 16Gb single die packageOptions: B = Standard CF card configuration A = Standard CF with conformal coating C = Standard card with DMA disabled D = Standard card with DMA disabled and conformal coating E = Fixed disk option (for compatibility with some embedded software) F = Fixed disk with conformal coating H = Fixed with DMA disable J = Fixed disk with DMA disable and conformal coatingMarket Series: M1 = Medical Series 1G = for RoHS

7N CF xxx H x x x x x x M1 x0

W


Merged Part Number Guide

White Electronic Designs Corp. Memory Family (see chart below) Memory Type (see chart below) Module Lead Finish G = Gold F = Tin/Lead Ranks (Modules only) Blank = Single 2 = Dual 4 = Quad Depth example - 128M, 512M, etc. Bus Width example - x64, x72, etc. Component Width (Modules only) A = x4 E = x8 S = x16 T = x32 Component Package F = FPBGA* (DDR1) M = MCP (Die based) S = Stacked TSOP T = TSOP Voltage V = 3.3V S = 2.5V E = 1.8V Options U = Unbuffered (Modules only) R = Registered B = Bottom Boot Block (Flash only) T = Top Boot Block (Flash only) Speed/CAS Latency (see chart below) Substrate Revision (Modules only) A = Rev A B = Rev B, etc. JEDEC Card Design (Modules only) J = JEDEC Blank = Non-JEDEC Package D1 = 144 Pin SO-DIMM D2 = 168 Pin DIMM D3 = 184 Pin DIMM D4 = 200 Pin SO-DIMM D5 = 200 Pin DIMM D6 = 240 Pin DIMM AD6 = 240 Pin DIMM VLP 0.72” D7 = 244 Pin Mini-DIMM AD7 = 240 Pin DIMM VLP 0.72” Temperature Range M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C Component Vendor Code (Modules only) Blank = Any vendor E = Elpida G = Infineon H = Hynix K = ISSI M = Micron N = Nanya S = Samsung V = Mosel/Vitelic RoHS Blank = Standard Process F = Lead Free G = RoHS R = RoHS 5

Memory Family 2 = SSRAM 3 = SDRAM 4 = DRAM 5 = EEPROM 7 = Flash 8 = SRAM 9 = Combo (Mixed)

Speed (Modules only) SDRAM 10 = 100MHz (CL=2) 7 = 133MHz (CL=2) 7.5 = 133MHz (CL=3) DDR/DDR2 SDRAM (Speed/CAS Latency) 202 = 100MHz/200Mbps (CL=2) 265 = 133MHz/266Mbps (CL=2.5 263 = 133MHz/266Mb/s (CL=2-3-3) 262 = 133MHz/266Mb/s (CL=2-2-2) 332 = 166MHz/333Mb/s (CL=2) 335 = 166MHz/333Mb/s (CL=2.5) 403 = 200MHz/400Mb/s (CL=3.3.3) 534 = 266MHz/533Mbs (CL=4.4.4) 665 = 333MHz/667Mbs (CL=5.5.5) 806 = 400MHz/800Mb/s (CL=6.6.6)

Memory Type E = SDRAM DDR -1 H = SDRAM DDR - 2 M = Mirror-bit Flash

W/WV X X X X XXXM XX X X X X XXX X X XX X X X


Notes


Notes

Corporate HeadquartersMicroelectronics Division

3601 E. University DrivePhoenix, AZ 85034Tel: 602-437-1520Fax: 602-437-9120

Display Systems Division21333 NW Jacobson Road

Hillsboro, OR 97124Tel: 503-690-2460Fax: 503-690-2490

Interface Electronics Division539 Industrial Mile Road

Columbus, OH 43228Tel: 614-279-6326Fax: 614-279-0249

Electromechanical Products Division8000 Bluffton Road

Fort Wayne, IN 46809Tel: 260-747-3121Fax: 260-747-9601

ESD Product Catalog 3/07 ESD2007S

Important notice: White Electronic Designs reserves the right to make changes to or to discontinue any product or service identified in this publication without notice. WEDC advises its customers to obtain the latest version of the relevant information to verify, before placing orders, that the information being relied upon is current.

White Electronic Designs Corporation (NASDAQ:WEDC) designs, develops, and manufacturers innovative solutions for three high-technology sectors — commercial, industrial and defense. Areas of concentration include: advanced semiconductor packaging, high-density memory products and state-of-the-art microelectronic multi-chip packages for data communications and telecommunications providers, defense and aerospace system suppliers; ruggedized high-legibility flat panel displays for aircraft and ordnance delivery systems; interface storage and retrieval devices; and electromechanical assemblies for OEMs.

White Electronic Designs Corporation (WEDC) headquarters are in Phoenix, Arizona, with design and manufacturing centers in Arizona, Indiana, Oregon and Ohio. To learn more about WEDC, visit our web site at www.whiteedc.com.

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MICROELECTRONIC PRODUCT CATALOG - oldsite-rtd-uni.1gb.ru