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MICRO-PHOTOLUMINISCENCE FROM InAs/GaAS QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY G. Muñoz-Matutano 1 , J. Canet-Ferrer 1 , D. Fuster 1 , J. Martínez-Pastor 1 P. Alonso-González 2 , B. Alén 2 , I. Fernández- Martínez 2 , Y. González 2 , F. Briones 2 , L. González 2 1 UMDO (unidad asociada al IMM-CSIC), Instituto de Ciencias de los Materiales, Universitat de València. 2 IMM-CNM-CSIC: Instituto de Microelectrónica de

MICRO-PHOTOLUMINISCENCE FROM InAs / GaAS QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

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MICRO-PHOTOLUMINISCENCE FROM InAs / GaAS QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY. G. Muñoz-Matutano 1 , J. Canet-Ferrer 1 , D. Fuster 1 , J . Martínez-Pastor 1 P. Alonso-González 2 , B. Alén 2 , I. Fernández-Martínez 2 , Y. González 2 , F. Briones 2 , L. González 2. - PowerPoint PPT Presentation

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Page 1: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

MICRO-PHOTOLUMINISCENCE FROM InAs/GaAS QUANTUM DOT MOLECULES GROWN BY DROPLET

EPITAXY

G. Muñoz-Matutano1, J. Canet-Ferrer1, D. Fuster1, J. Martínez-Pastor1

P. Alonso-González2, B. Alén2, I. Fernández-Martínez2, Y. González2, F. Briones2, L. González2

1UMDO (unidad asociada al IMM-CSIC), Instituto de Ciencias de los

Materiales, Universitat de València.2IMM-CNM-CSIC: Instituto de Microelectrónica de Madrid.

Page 2: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

MICRO-PHOTOLUMINISCENCE FROM InAs/GaAs QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

OUTLOOK:1. Introduction: Quantum Dot Molecule.

2. Droplet Epitaxy Growth: optical features.

3. Sample and Experimental Set-Up.

4. Lateral QD molecule results.

i) Voltage Features.

ii) Molecular Coupling.

5. Vertical QD molecule preliminar results.

6. Conclusions.

Page 3: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

1. INTRODUCTION: QD MOLECULESGr

owth

Dire

ction

Grow

th D

irecti

on

VERTICAL MOLECULES LATERAL MOLECULESe-

h+

1. Electron states coupling (e- Tunneling )

2. Hole states coupling (h+ Tunneling )

3. Excitonic state couplin ( Föster copling (virtual photon))

Page 4: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

1. INTRODUCCIÓN: DEL QD AISLADO AL CRISTAL DE QDs

E.A. Stinaff et al, Science 311, 636 (2006)

H.J. Krenner et al, PRL 94, 57402 (2005)C.J. Beirne et al, PRL 96, 137401 (2006)

VERTICAL MOLECULES

LATERAL MOLECULES

TUNNING QD STATES WITH ELECTRIC FIELD

Page 5: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

2. DROPLET EPITAXY GROWTH:

ADVANTAGES :

• Localized nanostructures.

• Low density samples.

• Growth by QD pairs.

P. Alonso-González et al, Crystal Growth and Design 9, 2525 (2009)

L.Wang et al, New Journal of Physics 10, 045010 (2008)

Page 6: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

• Density ≈ 2.5 x 108 cm-2

• Negative excitonic complex.

• Arsenic Vacancies.

P. Alonso-González et al, APL 91, 163104 (2007)

HIGH OPTICAL QUALITY

2. DROPLET EPITAXY GROWTH:

Page 7: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

3. SAMPLE AND EXP. SET UP: Lateral Molecules.

110

1-10

• InAs Droplets Pairs.

• Schottky Diode.

• Field on 110

1 - 1,5 µm

Au-Cr

ΔV

E (110)Ga

AsInAs

Page 8: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

3. SAMPLE AND EXP. SET-UP: Vertical Molecules.

P. Alonso-González et al, APL 93, 183106 (2008)

• First layer:

QDs grown by Droplet Epitaxy

• Second layer:

4 nm of GaAs

• Tercera capa:

Self assembled QDs localized on first

layer QDs.

1.20 1.24 1.28 1.32

Photon energy (eV)

PL

Inte

nsity

(arb

. uni

ts)

1.2 ML

1.4 ML

1.6 ML

Page 9: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

3. SAMPLE AND EXP: SET-UP: Vertical Molecules.

Page 10: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

3. SAMPLE AND EXP. SET-UP: Confocal Microscope.

Laser

μPL Signal

Page 11: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

LATERAL MOLECULERESULTS

Page 12: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Lateral Molecules

QDs DROPLET PAIRS: Voltage Features.

Journal of Physics: Conference Serires 210, 012015 (2010)

-6 -5 -4 -3 -2 -1 01.3350

1.3325

1.3300

1.3275

1.3250

Voltage (V)

E (e

V)

-6 -4 -2 0 2 41,292

1,290

1,288

1,286

1,284

1,282

1,280

1,278

Voltage (V)

E (e

V)X0

A

X-1A

X-2T, A

X0B

X-1B

X-2T, B

Type I: Isolated Type II: Decoupled pair

Page 13: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Lateral Molecules

QDs DROPLET PAIRS: Voltage Features.

Journal of Physics: Conference Serires 210, 012015 (2010)

Type III: Coupled pair

Page 14: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Lateral Molecules

QDs DROPLET PAIRS: Coupling (optical signatures)

-3 -2 -1 0 1 2 3 4 5 6

954

956

958

960

962

964

966

968

Wav

elen

ght (

nm)

X

XX

X

X

XXX

XXX

XXX

X

XXXX

X XXX

X

XX

X

Voltage (V)

0 2 4 6 8 10

TRPL

Inte

nsity

(Arb

. Uni

ts)

Time (ns)

X @ 956.3 nmXX @ 957.3 nm

V = 5.7 V

0,1 1 10 100

m = 2.0729 @ 957,3 nmm = 0.98788 @ 960,9 nm

Int.

Inte

nsity

(arb

. Uni

ts)

Power (W)

V = 5,7 v

Page 15: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Lateral Molecules

QDs DROPLET PAIRS: CouplingPositive Sweep

4,0 4,5 5,0 5,5 6,0

1,292

1,291

1,290

1,289

X

X

E (e

.V.)

Voltage (V)

• Identified some examples of anticrossing

μPL evolution.

ZOOM 1 ZOOM 2

Page 16: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

VERTICAL MOLECULE RESULTS

Page 17: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Vertical Molecules Preliminary Results

1.20 1.24 1.28 1.32

Photon Energy (eV)

1.23 1.24 1.25 1.26 1.27 1.28 1.29

PL In

tens

ity (a

rb. u

nits

)

Photon Energy (eV)1.24 1.25 1.26 1.27 1.28 1.29 1.30 1.31 1.32

PL In

tens

ity (a

rb. u

nits

)

Photon Energy (eV)1.24 1.25 1.26 1.27 1.28 1.29 1.30 1.31 1.32

PL In

tens

ity (a

rb. u

nits

)Photon Energy (eV)

-PL -PL

QD-A QD-B QD-C

-PL

1.4 MLEnsemble

QD Droplet (QD1) + SAQD (QD2)

Page 18: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

4. RESULTS: Vertical Molecules Preliminary results

0.6 0.3 0.0 -0.3 -0.61.280

1.285

1.290

1.295

1.300

Gate Voltage (V)

Phot

on E

nerg

y (e

V)

E.A. Stinaff et al, Science 311, 636 (2006)

Anomalous stark shifts (Blue y Red Shifts)

Page 19: MICRO-PHOTOLUMINISCENCE FROM  InAs / GaAS  QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

MICRO-PHOTOLUMINISCENCE FROM InAs/GaAs QUANTUM DOT MOLECULES GROWN BY DROPLET EPITAXY

Conclusions:

1. Lateral Molecules:

• Different Voltage features.

• Optical anticrossings as signatures of molecular coupling.

2. Vertical Molecules:

• Optical evidences from two different QDs.

• Anomalous QCSE shifts.