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Schematic representation of the formation of BCN-
graphene via solvothermal reaction between carbon
tetrachloride (CCl4), boron tribromide (BBr3), and
nitrogen (N2) in the presence of potassium (K).
Photograph is of the autoclave after the reaction,
showing the formation of BCN-graphene (black)
and potassium halide (KCl and KBr, white).
(Credit: UNIST)
KurzweilAI | Accelerating Intelligence.News
Method for mass production of graphene-based field-effect
transistors (FETs) developed
December 20, 2013
Ulsan National Institute of Science and Technology (UNIST)
researchers in Korea have
announced a method for mass production ofgraphene-based
field-effect transistors (FETs).
The design creates boron/nitrogen co-doped graphene
nanoplatelets (BCN-graphene) via a
simple solvothermal reaction of BBr3/CCl4/N2 in the presence of
potassium.
Various methods of making graphene-based FETs have been
exploited, including doping
graphene, tailoring graphene like a nanoribbon, and using boron
nitride as a support, the
researchers said.
Among the methods of controlling the bandgap* of graphene,
doping methods show the most
promise in terms of industrial-scale feasibility, they
suggest.
Researchers have previously tried to add boron to graphene to
open its bandgap to achieve
semiconductor performance, without success, because the atomic
size of boron, 85 pm
(atomic radius) is larger than that of carbon (77pm).
Now, the UNIST researcher team, led by Prof. Jong-Beom Baek, has
found that
boron/nitrogen co-doping is only feasible when carbon
tetrachloride (CCl4 ) is treated with
boron tribromide (BBr3 ) and nitrogen (N2) gas, which at 70 pm
is a bit smaller than carbon
and boron.
Pairing two nitrogen atoms and two boron atoms can compensate
for the atomic size mismatch, so boron and nitrogen pairs can be
easily
introduced into the graphitic network, the researchers say. The
resultant BCN-graphene generates a bandgap appropriate for
FETs.
Although the performance of the FET is not in the range of
commercial silicon-based semiconductors, this initiative work
should be the proof of a
new concept and a great leap forward for studying graphene with
bandgap opening, said Baek. Now, the remaining challenge is
fine-tuning a
http://jbbaek.unist.ac.kr/http://en.wikipedia.org/wiki/Band_gaphttp://www.unist.ac.kr/http://jbbaek.unist.ac.kr/http://en.wikipedia.org/wiki/Band_gaphttp://en.wikipedia.org/wiki/Solvothermal_synthesishttp://www.unist.ac.kr/http://www.kurzweilai.net/
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bandgap to improve the on/off current ratio for real device
applications.
This work will be published inAngewandte Chemie International
Editionas a VIP (very important paper).
The research work was funded by the National Research Foundation
(NRF) of Korea and the U.S. Air Force Office of Scientific
Research
through the Asian Office of Aerospace R&D (AFOSR-AOARD).
* A bandgap is the energy required to allow an electron to move
freely within a solid material a major factor determining the
electrical
conductivity of a solid. Substances with large band gaps are
generally insulators; conductors (such as native graphene) either
have very small band
gaps or none. Those with intermediate bandgaps are
semiconductors.
Abstract ofAngewandte Chemie International Edit ionpaper
Boron/nitrogen co-doped graphene (BCN graphene) is directly
synthesized from a reaction between CCl4/BBr3/N2in the presence of
potassium.
The reaction of CCl4with either BBr3or N2alone leads to a
marginally doped graphene. On the other hand, there is a
synergistic effect when CCl4
is reacted with BBr3and N2together to yield BCN graphene. The
resultant BCN graphene displays good dispersion stability in
N-methyl-2-
pyrrolidone, allowing for the fabrication of a field-effect
transistor by solution casting, which displays an on/off ratio of
10.7 with an optical band
gap of 3.3 eV. Considering the scalability and solution
processability, BCN graphene has a high potential for many
practical applications.
References:
Sun-Min Jung et al., "Direct" Synthesis of Boron/Nitrogen
Co-Doped Graphene through the Solvothermal Reaction of Carbon
Tetrachloride, Boron Tribromide, and Nitrogen,Angewandte Chemie
International Edition(in press)
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