認識微機電系統技術mems.mt.ntnu.edu.tw/document/class/97上學期/機電整合技術... · 台灣師範大學機電科技學系 C. R. Yang, NTNU IMT-1-微機電製程與應用技術

C. R. Yang, NTNU IMT

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MEMS fabrication process and its application

Department of Mechatronic Technology

National Taiwan Normal UniversityTel: 02-23583221 ext. 14E-mail:[email protected]


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vs.


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vs. vs.

3D Optical Scanner 3D Optical Scanner (ADI, USA)

Metal-Oxide-Silicon Field Effect Transistor

MOSFET

NMOSPMOS


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70 Kg, 30000 cm3, 1200 W

Europa Scientific, UK

0.2 Kg, 3 cm3, 0.5 W

DARPA, USA


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actuators

actuators

sensors array

sensors array

microprocessor

microprocessor/

input/output

/input/output

internal bus

exte

rnal

bus

Physical Chemical Biochemical

Energy Thermal Mechanical Fluidic Optical Electrical

Electrical Optical Acoustic


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Artist impression of a hybrid Artist impression of a hybrid TAS dating from the mid 90's. TAS dating from the mid 90's.

(micro total analysis system, (micro total analysis system, TAS)TAS)


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Micro-Electro-Mechanical System (MEMS) Micromachines Micro-Systems Technology (MST)

MEMS applications:- Optical MEMS ()

MOEMS: Micro Opto Electro Mechanical SystemsMOMS: Micro Opto Mechanical Systems

- Bio MEMS ()TASMicro Total Analysis SystemLOCLab. On a Chip

- RF MEMS ()


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Digital Mirror Display Digital Mirror Display (DMD) (DMD) / Digital Light Processing / Digital Light Processing (DLP)(DLP)

Texas Instruments

15 m


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Blood testingDrug delivery

Insulin pump (Debiotech, Switzerland)


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Shrinking Wireless ArchitecturesShrinking Wireless Architectures

C. T.-C. Nguyen, Communications applications of microelectromechanical systems (invited),Proceed-ings, 1998 Sensors Expo, San Jose, California, May 20, 1998, pp. 447-455.


-12-Source: NEXUS III, http://nexus-mems.com/

*Other are: microreaction, chip cooler, MEMS memories, liquid lenses, microspectrometer, wafer probes, micro-mirrors for optical processing, micro-pumps, micromotors, chemical analysis systems


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Thermal Bubble Inkjet Head

Thermal Bubble Inkjet Head(Tseng et al, UCLA, 1998)

Droplet ejection

Tail cutting

Commercial Inkjet MicroinjectorHP 51626A Printhead

Nozzle: 60 mDroplet: 50 mFrequency: 8 kHz

Nozzle: 40 mDroplet: 45 mFrequency: 18 kHz


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ICIC(())


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Chemical Vapor Deposition (CVD)Chemical Vapor Deposition (CVD)

PECVDLPCVDAPCVDMOCVD()


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SputteringSputtering

Physical Vapor Deposition (PVD)Physical Vapor Deposition (PVD)Joule heat or Electron beamJoule heat or Electron beam


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Dehydration Bake

resistresist

VacuumSpin Coating

Soft Bake

Exposure

UV

Post Exposure Bake

VacuumSpin Drying

Hard Bake

10-15min @ 250

(optional)

? min @ ?

? dosage/?thickness

Development(agitation)

? min @ ?

(Rinse)

(Priming)


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Cr-7


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800 - 1000(SiO2)

SiO2

Si

(a) SiO2

(b) BOESiO2

Si

SiO2PR

Si

(c) TMAH

SiO2


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(diffusion)(diffusion) (Ion implantation)

()


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PMOS

(doping)(doping)


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substrate

resist

(a) Define resist

(b) Metal deposition

Metal source

Acetone

(c) Strip resist

Construction of metallization patterns by lifeConstruction of metallization patterns by life--off processoff process


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(Surface micromachining)(Surface micromachining)

(Bulk micromachining)(Bulk micromachining)


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()

Process FlowProcess Flow of Surface Micromachiningof Surface MicromachiningSacrificial layer release by selective etchingSacrificial layer release by selective etching


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Process FlowProcess Flow of Surface Micromachiningof Surface Micromachining

SacrificialSacrificial FloatingFloatingPoly-SiSiO2 BOE

Al,Ti PAE, H2SO4 Si3N4, SiO2(PECVD)

EtchantEtchant

Poly-Si TMAH, KOH, EDP Si3N4, SiO2(LPCVD)


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Hinged structures

Schematic of the fabrication process for surface-micromachinined microhinges.

Ming C. Wu, UCLA

33--D D

R. S. Muller, Berkeley


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:

:

:,

Sandia National Lab., USA


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MicroMicro--optical benchoptical bench

http://www.ee.ucla.edu/labs/laser/index.html


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Flow sensor

Accelerometer

V-groove Neural microprobe

Force sensor


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Three Working Planes of Silicon SubstratesThree Working Planes of Silicon Substrates

Ref: Prof. Hsu, Tai-Ran, ITRI Lecture, Jan., 2001

(100) Plane (110) Plane (111) Plane

0.543 nm 0.768 nm 0.768 nm

0.76

8 nm

Normal plane: Diagonal plane: Incline plane:


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Silicon Wet Etching TechniqueSilicon Wet Etching Technique


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Effects of mask geometry and agitation for isotropic wet etching

Isotropic Etching of SiliconIsotropic Etching of SiliconEtchant:HNA (HF, HNO3, CH3COOH)Room temperature (


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Anisotropic Etching of SiliconAnisotropic Etching of Silicon

Etchant:KOH, TMAH, EDP, H2N4

(110)

(100)


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Etching apparatusEtching apparatus

temperaturecontroller

water out

water in

pump

water

hot plate

thermalcouple

wafer

etchant

water

nitrogen in


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Corner CompensationCorner Compensation

EDP etchant KOH etchant


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Mesa microstructures etched in TMAH-BR solution and pure solution without using the corner compensation technique.

Pure TMAH

BR-Added()


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Etching stop technology Etching stop technology

(a) (b)

p+

p+

(a) (b)


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(doping selective etching)

(corrugated)


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Si3N4

Si

(b) RIESi3N4

(c) KOH

Si

PRSi3N4

Si

Si3N4

(a) LPCVDSi3N4


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Heavily Boron Doped Silicon Layer Microstructures

P+ layer ()

P+ layer ()


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Silicon Dry Etching TechniqueSilicon Dry Etching Technique


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(ICP-RIE), PIDC

(RIE), NTNU MOEMS Lab.


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HighHigh--aspectaspect--ratio, Anisotropic Silicon Etching ratio, Anisotropic Silicon Etching TechniquesTechniques by Inductively by Inductively Coupled Plasma Reactive Ion Etching (ICPCoupled Plasma Reactive Ion Etching (ICP--RIE)RIE)

Mask, ,

mask PR, metal, Si3N4, SiO2, Si, Polysilicon...

substrate PR, metal, SiO2, Si, Polysilicon...

Plasma

etch stop


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STSs ASE (Advanced Silicon Etch) Process(Bosch Patent)

(C4F8/SF6)

1.

C4F8

2.

SF6F-Si

3.

siliconmask

Sidewall polymericpassivation (nCF2)

( a )

nCFx+

nCFx-

nCFx-nCFx+

silicon

mask

Sidewall polymericpassivation (nCF2)

( b )

CFx

F-

SiFxSFx+

SFx+

Source: , , , (1999)Alternating etch and polymerization process


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MCNC, USA

Comb-driver Nested Gears

Micromotor Gyroscope


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Dry Release ProcessDry Release Process


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LIGA

SIGA


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2.

4.

6.

Mould cavity

Resiststructure

Plastic structure

5.

3.

1.

Plastic(mouldingcompound)

MetalResist structure

Electrical conductivebase plate

Base plate

AbsorberstructureMaskmembrane

Resist

Source: Institut fr Mikrotechnik Mainz (IMM), Germany

Lithographie:Galvanoformung:Abformung:LIGALIGA

MCNC, USA

IMM, Germany


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(())

()


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(())(())

() Ni, Cu, Cr, Zn, Sn, Au, Ag,

() Ni(Co, Fe, Mn, W, P); Cu(Zn, Sn); Sn(Pb, Cu, Au, Ag),

() Ni, Ni-P, Ni-Co/Al2O3, SiC, Diamond, PTFE; Cu/Diamond,

(())


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LIGA LIGA vs. vs. LIGA LIGA

LIGA X

LIGA

mm100

X-ray

1mm50


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Synchrotron Radiation Research Center (for LIGA process)Synchrotron Radiation Research Center (for LIGA process)

JAPAN SPring-8USA APS FRANCE ESRF

ICP-RIE SystemExcimer Laser System UV mask aligner

LowLow--cost Exposure System (for LIGAcost Exposure System (for LIGA--like process)like process)

Instrument Technology Research Center, ITRC


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Comparison of a low energy x-ray mask (left) and a high energy x-ray mask (right) both designed and created at Wisconsin.

4m Gold on a 1m SiN membrane

50m Gold on a 400m Si substrate

PhotomaskPhotomask of Xof X--ray Lithographyray Lithography


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Source: http://daytona.ca.sandia.gov/LIGA/mask.html( Sandia National Laboratory, USA )

PhotomaskPhotomask of UV Lithographyof UV Lithography

(a) CAD Layout (b) Chrome Mask


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Schematic of a X-ray mask/substrate scannerSource: http://daytona.ca.sandia.gov/LIGA/mask3.html

X-Ray Scanner DEX 02

JENOPTIK Mikrotechnik GmbH

XX--ray Deep Lithography Scannerray Deep Lithography Scanner


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Key Features of XKey Features of X--ray LIGA Microstructuresray LIGA Microstructures

Realization of arbitrary shapeExtreme structure height (>mm)Extreme aspect ratio (>100)Minimum lateral dimensions 0.50.1mSurface roughness 0.03-0.05 mVertical & smooth sidewallsWide variety of materialsSuccessful in mass fabrication


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Polyimide (a) Nd-YAG laser, (b) CO2 laser, (c) Excimer laser

F2(157 nm)ArF (193 nm)KrF (248 nm)XeCl (308 nm)XeF (351nm)


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((photoablationphotoablation))

Excimer laser beam incident on surface

Ablated material ejected at high speedhttp://www.coherent.com/lambdaphysik/


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ExcimerExcimer Laser MicromachiningLaser MicromachiningLaser LIGA technologyLaser LIGA technology

Fresnel structure ablated into dry film with 50 m thick

Nickel electroplated metallic microstructure


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ExcimerExcimer Laser Laser Micromachining: Mask DraggingMicromachining: Mask Dragging

shaped mask


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Applications of Ultrathick Photoresist for Microstructure Fabrication

UV

Low-Cost LIGA(Poor-Man LIGA Technology)

UV

AZ4000 series, Hoechst (Germany)ma-P 100, ma-N 400, Micro resist technology (Germany)PMER P-LA 900, tok (Japan)Probimide, Olin microelectronic materials (Japan)THB-611P, THB-430N, JSR (Japan)SU-8, Microlithography chemical corporation (USA)


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SUSU--8 Microstructures to be filled by electroforming8 Microstructures to be filled by electroforming


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SUSU--8 Structure filled by electroforming with Ni8 Structure filled by electroforming with Ni--Fe alloyFe alloy


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SUSU--88UVUV--LIGALIGA

vs.

(PIDC)


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Preparing Preparing PhotoresistPhotoresist Reflow Lens PatternReflow Lens Pattern

H. Toshiyoshi


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Transferring Transferring PhotoresistPhotoresist Pattern into SiliconPattern into Silicon


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SiO2Si

Si

(a) SiO2

(b) BOESiO2

(c)

SiSiO2PR

SiO2

Si

(d) BOESiO2

SiCr/Cu

(e) Cr/Cu

SiCr/Cu

Ni

(f)

(g)

In German: In English:Silizum-mikrostrukyur Silicon-microstructuringGalvanoformum ElectroformingAbformung Molding

SISIGAGA


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Lenses

Gratings Waveguides

Holograms

1. Lithography +RIE etching2. Photoresist reflow3. Direct writing of e-beam or laser4. Shaped light beam method5. Grey tone mask technique

Grey tone mask technique

Shaped light beam method

Direct writing of e-beam

SIGASIGA


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Lens profile in resist on glass or silicon

Ion etching

Lens profile etched into glass or silicon

Ni stamper

glass

UV-curable polymer

UV exposure

Ni stamper

SubstratePolymer film


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Application of SIGA ProcessApplication of SIGA ProcessFabrication of Silicon Fuel Fabrication of Silicon Fuel AtomiserAtomiser

Si mold

Ni atomizer

1. Grow oxide and pattern

2. Spin on thick resist and pattern

3. First 275 m deep DRIE etch

4. Remove oxide and second DRIE etch for an additional 125 m

6. Polish excess and release

5. Deposit 400 m of Ni

N. Rajan et al., J. Microelectromechanical Systems, 8(3), 251(1999)

Fabrication of Silicon Fuel Fabrication of Silicon Fuel AtomiserAtomiser


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Micro/Nano-Machines("kikai")

createMacro-Opportunities

("kikai" )By Dr. Osamu Tabata, Kyoto University

ConclusionConclusion

Documents

認識微機電系統技術mems.mt.ntnu.edu.tw/document/class/97上學期/機電整合技術... · 台灣師範大學機電科技學系 C. R. Yang, NTNU IMT-1-微機電製程與應用技術