3
B R 1  6  3  5 - B R 1  6  6  0 MBR1635 - MBR1660 Rev. C 2001 Fairchild Semiconductor Corporation MBR1635 - MBR1660 Schottky Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A  = 25°C unless otherwise noted  Symbol Parameter Value Units P D Power Dissipation 2.0 W R θJA  Thermal Resistance, Junction to Ambient 60 °C/W R θJL  Thermal Resistance, Junction to Lead 1.5 °C/W Symbol Parameter Device Units 1635 1645 1650 1660 V F  Forward Voltage I F = 16 A, T C = 25°C I F = 16 A, T C = 125°C 0.63 0.57 0.75 0.65 V V I R  Reverse Current @ rated V R T A = 25°C T A = 125°C 0.2 40 1.0 50 mA mA I RRM Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1. 0 KHz 1.0 0.5 A Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. TO-220AC 1 2 Thermal Characteristics  Symbol Parameter Value Units 1635 1645 1650 1660 V RRM Maximum Repetitive Reverse Voltage 35 45 50 60 V I F(AV) Average Rectified Forward Current .375 " lead length @ T A = 125°C 16 A I FSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 150 A T stg  Storage Temperature Range -65 to +175 °C T J Operating Junction Temperature -65 to +150 °C PIN 1 + CASE + PIN 2 - CASE Positive

MBR1660

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MB R 1  6  3  5 

- M

B R 1  6  6  0 

MBR1635 - MBR1660 Rev. C2001 Fairchild Semiconductor Corporation

MBR1635 - MBR1660

Schottky Rectifiers

Absolute Maximum Ratings* TA

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics TA = 25°C unless otherwise noted

 

Symbol Parameter Value Units

PD Power Dissipation 2.0 W

RθJA  Thermal Resistance, Junction to Ambient 60 °C/W

RθJL  Thermal Resistance, Junction to Lead 1.5 °C/W

Symbol Parameter Device Units1635 1645 1650 1660

VF  Forward Voltage IF = 16 A, TC = 25°C

IF = 16 A, TC = 125°C

0.630.57

0.750.65

VV

IR  Reverse Current @ rated VR TA = 25°C

TA = 125°C

0.240

1.050

mAmA

IRRM Peak Repetitive Reverse Surge Current2.0 us Pulse Width, f = 1.0 KHz

1.0 0.5 A

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarityprotection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection. TO-220AC

1 2

Thermal Characteristics

 

Symbol Parameter Value Units1635 1645 1650 1660

VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V

IF(AV) Average Rectified Forward Current

.375 " lead length @ TA = 125°C16 A

IFSM Non-repetitive Peak Forward Surge Current8.3 ms Single Half-Sine-Wave

150 A

Tstg  Storage Temperature Range -65 to +175 °C

TJ Operating Junction Temperature -65 to +150 °C

PIN 1 +

CASE

+

PIN 2 -

CASE Positive

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MBR1635 - MBR1660 Rev. C2001 Fairchild Semiconductor Corporation

Schottky Rectifier(continued)

Typical Characteristics

0.01 0.1 1 10 1000.1

1

10

100

Pulse Duration [s]

   T  r  a  n  s   i  e  n   t   T   h  e  r  m

  a   l   I  m  p  e   d  a  n  c  e   [   º   C   /   W   ]

1 2 5 10 20 50 1000

25

50

75

100

125

150

Number of Cycles at 60Hz   P  e  a   k   F  o  r  w  a  r   d   S  u  r  g  e   C  u  r  r  e  n   t ,   I   F

   S   M

   [   A   ]

0.1 1 10 100100

200

500

1000

2000

5000

Reverse Voltage, VR [V]

   T  o   t  a   l   C  a  p  a  c   i   t  a  n  c  e ,

   C   T

   [  p   F   ]

MBR1635-MBR1645

MBR1650-MBR1660

0 0.2 0.4 0.6 0.8 1 1.20.01

0.1

1

10

50

Forward Voltage, VF [V]

   F  o  r  w  a  r   d   C  u  r  r  e  n   t ,   I   F   [   A   ]

Pulse Width = 300µµµµS2% Duty Cycle

T = 25 CºAT = 150 CºA

MBR1635-MBR1645

MBR1650-MBR1660

0 20 40 60 80 100 120 1400.001

0.01

0.1

1

10

50

Percent of Rated Peak Reverse Voltage [%]

   R  e  v  e  r  s  e   C  u  r  r  e  n   t ,   I   R   [  m   A   ]

T = 25 CºA

T = 75 CºA

T = 125 CºA

MBR1635-MBR1645

MBR1650-MBR1660

MBR1650-MBR1660

MBR1635-MBR1645

0 25 50 75 100 125 150 1750

4

8

12

16

20

Ambient Temperature [ºC]   A  v  e  r  a  g  e   R  e  c   t   i   f   i  e   d   F  o  r  w  a  r   d   C  u  r  r  e  n   t ,   I   F   [   A   ]

SINGLE PHASE

HALF WAVE

60HZ

RESISTIVE OR

INDUCTIVE LOAD

.375" (9.00mm) LOAD

LENGTHS

Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current

Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

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user.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

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Definition of Terms

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Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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Full Production

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