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BK BIRLA INSTITUTE OF ENGINEERING & TECHNOLOGY,
PILANI
Department of Electronics and Communication Engineering
A
PROJECT PRESENTATION
ON
“DESIGN AND SIMULATION OF GRAPHENE PIEZORESISTIVE MEMS PRESSURE SENSOR ”
Presented By: Guided by: Manish Kumar 11EBKEC032 Dr. Kulwant Singh
(Assistant Professor)Abhishek Kumar 11EBKEC002 (Dept. of Electronics & Communication)
.
OUTLINES :
1. Introduction 2. Pressure sensor simulations
3. Results4. ConclusionsAcknowledgmentsReferences
Micro Electro Mechanical Systems (MEMS)
Micro(small)
Electro(electric components/functionality)
Mechanical(mechanical components/functionality)
Systems(integrated, system-like functionality)
http://eed.gsfc.nasa.gov/562/SA_MEMs.htm
http://www.memx.com/
http://www.memx.co
m/
http://www.forbes.com/2008/04/22/mems-apple-
nintendo_leadership_clayton_in_jw_0421claytonchristensen_inl_slide.html
Piezoresistive Pressure Sensors
Wheatstone Bridge configuration
PHYSICAL CAUSES OF PIEZORESISTIVITY PRESSURE LEADS CHANGE OF RELATIVE DIMENSION LEADS CHANGE OF RESISTANCE
5
WORKING PRINCIPAL : Wheatstone bridge circuit
R
RVV
RRR
RRR
RRR
RRR
RR
R
RR
RVV
s
s
0
44
33
22
11
43
3
12
20
• 2-dimensional hexagonal lattice of carbon
• sp2 hybridized carbon atoms
• Basis for C-60 (bucky balls), nanotubes, and graphite
• Among strongest bonds in nature
Graphene ?
Ref. A. K. Geim & K. S. Novoselov. The rise of graphene. Nature Materials Vol 6 183-191 (March 2007)
PRESSURE SENSOR SIMULATION
Dimension of the Silicon substrate
The 2D finite element of the sensor chip is established in COMSOL 4.3 and
the model analysis and static analysis are carried out.
Description Value(μm)
Length of Silicon 4000
Width of Silicon 4000
Thickness of Silicon 400
Working flow in COMSOL
1 Model 1 (mod1) 1.1 Definitions 1.2 Geometry 1 1.3 Materials 1.4Electromechanics(emi) 1.5 Mesh 1 2. Study 1 2.1 Stationary 3. Results 3.1 Data Sets 3.2 Plot Groups
STAGE 1: Deals With simple Etched Silicon
STAGE 2: Deals with Etched Silicon with deposited sio2
Stage 3 Mesh
RESULTS
The simulation of MEMS Piezoresistive Pressure sensor lead to
the response frequency will be determine.
**FUTURE WORK
Plot pressure vs displacement
Plot pressure vs change in resistance
Compare Graphene results with silicon
Application of piezoresistive pressure sensor
• Pressure sensing
• Altitude sensing
• Flow sensing
• Level / depth sensing
• Leak testing
CONCLUSIONS *
Graphene show excellent electrical conductivity compared to any other Nano-material super flexibility, and stretch ability up to 20% can be exploited. Furthermore, the resistivity of Graphene varies linearly with strain.
(*) Used for expectation
ACKNOWLEDGMENTS : Prof. L Solanki(Dean ECE/EE/EX BKBIET, Pilani)
- Dr. Kulwant Singh- (Assistant Professor)(Dept. of Electronics & Communication)
REFERENCES :
• Graphene based piezoresistive pressure sensor, Shou-Eu Zhu, Murali Krishna Ghatkesar,Chao Zhang, and G.C.A.M. Janssen
• Cantilever based MEMS pressure sensor using different piezoelectric Materials: A comparative study , Ashish Kumar, C. Periasamy and B.D. pant
THANK YOU
