ma-N 400 and ma-N 1400 Photoresists

for Lift-Off Process

ma-N 400 and ma-N 1400 Photoresists

for Lift-Off Process

micro resisttechnology

300 325 350 375 400 425 450

Abso

rbance

Wavelength [nm]

2000 3000 4000 5000 60000

2

4

6

8

film

thic

kness

[µm

]

spin speed [rpm]

ma-N 490ma-N 440ma-N 420ma-N 410ma-N 405

2000 3000 4000 5000 6000

0,5

1,0

1,5

2,0

2,5

3,0

film

thickness[µm]

spin speed [rpm]

ma-N1420ma-N1410ma-N1407

300 325 350 375 400 425 450

Abso

rbance

Wavelength [nm]

300 350 400 450 500

-2

-1

0

1

2

3

4

5

6

Dill

[µm

-1]

wavelength [nm]

B-Value

A-Value

300 350 400 450 500

-2

0

2

4

6

Dill[µm

-1]

wavelength [nm]

B-ValueA-Value

The ma-N 400 and ma-N 1400 are an innovation in negative tone photoresists for flexible use for proximity and contact exposure. Fullapplication compatibility with processing of conventional positive tone photoresists is guaranteed. Adjustable negative sidewalls can becreated by a simple lithographic process. The generation of more than 1000 nm metal structures by the lift-off process is achievable.

Physical Properties

Coat

Expose

Develop

Evaporate

Lift-Off

Photoresist

Substrate

Mask

Photoresist

Metal

Fast Lift-Off Process withma-N 400 or 1400

Advantages

• full compatible to thepositive tone type

• simple process• high etch resistance• easy to lift-off• easy to remove• high reproducibility

Resist Patterning

These negative tone photoresists are sensitive in the UV 300 and UV 400 range which is essentialfor the preparation of submicron geometries. Because of the easy handling of manufacture ofundercut pattern profiles these photoresists are favoured for the lift-off technique. The undercut isadjusted by exposure dose and developing process. The resist is developed with aqueous-alkaline developer. Due to their etching resistance in the plasma etching process as well as inacidic and alkaline wet-chemical etching, these negative tone resists have a sufficient galvanicstability in acidic and alkaline electrolytic bathes. The process is full compatible to the positive tonetype.

Conventional Lift-Off Processwith two Positive Resists

Coat

Flood Exposure

Coat

Expose

Develop

Evaporate

Lift-Off

PhotoresistSubstrate

ImagingResist

Mask

Metal

Resist thickness: 2 µm Resist thickness: 4 µm Resist thickness: 9 µm

Resist thickness: 9 µm Deposited silver on a resist pattern Deposited silver

ma-N 400

ma-N 1400

Spin curves

UV sensitivity

Dill Parameters

Spin curves

UV sensitivity

Dill Parameters