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LVI, LVP, TRI, TRE atechnical approach tochose the right tools
Philippe PERDU
Guillaume BASCOUL
Kevin SANCHEZ
EUFANET Smart workshop Dresden – 2012, September 17-18
Purpose
Browse optical probing techniques(single point and image mode) usedto solve VLSI dynamic issues(functional at speed, timing issues)
Identify overlaps and specific fields
2
Identify overlaps and specific fields(only) covered by one technique.
Underlines trends and challengesrelated to ultimate CMOStechnologies
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
3
Functional issues
Timing issues
BEOL and other issues
Conclusion
Introduction
Optical techniques are mandatory to analyze complexVLSI: Backside analysis to access active area through silicon
(multilayer BEOL, metal dummies in full planar, flip chip, LeadOn Chip…)
Static and dynamic optical techniques include opticalstimulation (laser) and probing techniques
Probing techniques to replace ebeam testing (image
4
Probing techniques to replace ebeam testing (imagemode or single point mode)
Dynamic: Laser (LVI, LVP) or EMMI (TRE, TRI) ?
STIMULATION ANALYSIS TECHNIQUE
optical electrical Laser Pumping (OBIC, TLS, SDL…)
electrical optical Probing (laser,emission …)
D.U.T
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
5
Functional issues
Timing issues
BEOL and other issues
Conclusion
LVP / LVI background (1)
Modulation of reflected laser by structure undertest
Laser Voltage Probing Based on
• Franz-Keldish effect (1064 nm) (band gap modulation =>absorption modulation)
• Free carrier absorption, (1340 nm) (free carrier modulation =>
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• Free carrier absorption, (1340 nm) (free carrier modulation =>absorption modulation)
2 schemes• CW (Continuous wave)
• “1064 could trigger latchup (OBIC)• Timing resolution given by the photodiode (down to 200 ps)
• Pulsed laser• Mostly 1064nm• Timing resolution given by pulse width (down to 10 ps)
Gives signal shape and timing / not signal voltage
LVP / LVI background (2)
7
LVP / LVI background (3)
LVI / LVP advantages Real shape of the
signal Work at low voltage Does not need current
LVI / LVP limitations
8
LVI / LVP limitations LVI is In fact
Frequency Tracing(use of Lock-in /spectrum analysis),only {x,y} map at onefrequency
Very sensitive to focus Complex situation
when spot size isgreater than uniformsubstructure
LVI LVP
LVP / LVI background (4)
9
Light Emission from relaxation of carriers speedup by the electrical field of overload MOS
Photon
TRE / TRI background (1)
1010
Source Drain
SiO2
Gate
P-Bulk
. . ... ... .. .
Photon
PhotonPinch-off
SG
D
TRI Detector
TRE / TRI background (2)
TRE (Time Resolved Emission, list of {t})
TRI (Time Resolved Imaging, list of {x,y,t})
11
t
Ph
t
n-MOS p-MOS
TRE / TRI background (3)
TRE / TRI advantages No invasive
Additive (if 2 emissive structures arein the same pixel)
Easy to setup
Spectrum / Number of photonconsiderations
12
considerations VDS voltage (balanced by QE:
coulombian effects and field)
Number and duration of transitions
TRE / TRI limitations Need voltage and current
View transitions not signal shape
Does not work well at low frequency
Cannot work at low voltage
Huge amount of data (TRI)
Number of photons / secondproportional toTransition repetition rate
Increase Nb of emitted photonsShift to visible
Circuits view TRI view
Time TimeWaveformpattern Clock
Transitionpattern Clock
TRE / TRI background (4)
13
Y
X
Y
X
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
14
Functional issues
Timing issues
BEOL and other issues
Conclusion
Functional issue challenge
Find gate involved in Open More complex situation Neither overconsumtion
(or not measurable)targetable by statictechniques nor soft defecttargetable by DLS
Gate ngood
Gate n+1bad
Open
No propagation
15
targetable by DLS
=> track a signal insidethe die LVI (map different
frequencies and look atdifferences
TRI (work on the fulldatabase {x,y,t} to find thefirst difference, activityanalysis or patternmatching
Gate ngood
Gate n+1bad
Fault
Bad output
Functional defect tracking with LVI
Only frequency tracing
But also work at low frequency
Can work at low magnification (but challenged by signalcomposition)
Pinpoint the last gate with signal whatever the defectplace is
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place is
Gate ngood
Gate n+1bad
Open
Gate ngood
Gate n+1bad
Open
Database analysis with TRI
17
Compared dataCompared data
1,244 dissimilarevents
Identifying of the failureIdentifying of the failure
originorigin with the firstwith the firstdissimilar events.dissimilar events.
Database comparison (ADC MAX186), Raw data 601,942 photons,processed data: 38,735 photons
Activity Analysis with TRI
Block activity depends on control signal (Input 0 and Input 1 inthis case) Blocks 1, 2, 3 and 4 related to input 0 and blocks 6,7, 8 and 9 related to input 1
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Pattern matching with TRI
19
Ability to track any kind of signal Pattern matching (based on events) High probablity for long pattern (2n)
Can work at low magnification (but challenged by clock signalsuperimposition)
Pinpoint the last good gate with (BEOL) load, depends on open position Combining with LVI will give complementary information on open position
TRI more complex but more infos / complementary info (Opens)
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
20
Functional issues
Timing issues
BEOL and other issues
Conclusion
Timing issue challenge
Gate involved in timing issue: rising or falling edge too slow Rising or falling edge delayed
Electrical behavior Transition delayed or too long (TRE / TRI)
21
Transition delayed or too long (TRE / TRI) Signal shape, rising edge or falling edge (LVP)
Where is the faulty gate? LVI: second harmonic analysis, difficult to locate
delay (same signature) TRI: direct ({x,y,t} database analysis or specific
Signal propagation analysis
LVI: Second Harmonic Analysis
Good
22
From ST Crolles (Courtesy ofGuillaume Celi and Sylain Dudit)
A good clock signal will havesquare shape with 50% of dutycycle
Any timing issue will modify thisspectrum (even harmonics)
Good
Bad
2nd harmonicLVI
TRI: Signal propagation
Visualization of thepropagation Temporal Frame-by-
Frame Chronogram in a selected
square (transistor or gate)
No way to vilualize delay
FPGA(130 nm)EMMI x20
23
No way to vilualize delayin a map (pixel intensitylinked to emission)
“Digital Lock-in” treatmentof TRI database Select transition of
interest Map the phase (directly
linked to time)
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
24
Functional issues
Timing issues
BEOL and other issues
Conclusion
Active area
Glitch (detected by TRI) Experiment done on 32
nm technology
LVP / LVI Low voltage
Down to less than 100 mV
No current Transmission gate NOR / NAND
DNand
D
Off
25
PropagationDelay in D
Glitch
TransmissionGate
1 1
Off
TransmissionGate
1 1
On
(BEOL) defect / Thermal behavior
Thermoreflectance TFI (Courtesy of Guillaume Celi
& Sylvain Dudit ST) Split Thermoreflectance from
LVI by modulating Power supply(min-max to keep the samebehavior)
26
Ultra fast thermography Experiments done on sample
shown ability to detect thermalphotons starting at 50 °C
Difficult to differenciate thermal /photo emission:
• OK on only BEOL• Possible by timing analysis
Exponentially increase withtemperature: heating the samplerise up thermal emission morethan photo emission
42°C 53°C 60°C 71°C
80°C 90°C 100°C 110°C
Spatial resolution challenges
Spatial resolution challenged For both techniques
Even with SiL
Transistor an elementary gate localisation lost
Detectivity remains high
27
Detectivity remains high LVI / LVP: complex contribution of Neighbors (+, -, =)
TRE / TRI: photons emitted by the neighbors areadded (+)
LVx more sensitive to focus
Low volltage LVP on Analog structure
LV
Psig
nalm
ag
nit
ud
e
Acquisition time <20sec for each waveforms
28
All data are displayed with the same H/V scale
LVP signal magnitude vs. DAC value
DAC Voltage (Volt)
LV
Psig
nalm
ag
nit
ud
e
This set of data on DAC structure demonstrates a strong linearity betweenLVP signal and actual voltage on the cheap
Good CW-LVP results on analog part down to 70mV
1.75 1.4 1.05 0.7 0.35 0.07
Courtesy of Antoine Reverdy (Sector Technology)
From Samples and images courtesy of NXP semiconductor
Outline
Introduction
LVI / LVP / TRE / TRI Background
Functional issues
29
Functional issues
Timing issues
BEOL and other issues
Conclusion
Conclusion
LVP-LVILow frequency LVILow voltage (analog, transmission gates …)
30
TRE-TRI
FunctionalTimingThermal
Pattern MatchingGlitch
CW (down to 100 ps)10 ps with pulsed laser CW (80 ps
TRI camera)
Both techniques have there advantages and drawbacks Even if there is an overlap to use them, we can
underline the complementarities Both techniques are challenged by spatial resolution Both techniques can do more than issues in active
areas
31
Thank you for your attention
Any question?